CN102244204A - OLED device and preparation method thereof - Google Patents
OLED device and preparation method thereof Download PDFInfo
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- CN102244204A CN102244204A CN2011101856631A CN201110185663A CN102244204A CN 102244204 A CN102244204 A CN 102244204A CN 2011101856631 A CN2011101856631 A CN 2011101856631A CN 201110185663 A CN201110185663 A CN 201110185663A CN 102244204 A CN102244204 A CN 102244204A
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Abstract
The invention relates to an organic light-emitting diode (OLED) device and a preparation method thereof. The OLED device comprises a transparent conducting oxide membrane deposited on a glass substrate, and a hole injection layer, a hole transmission layer, a luminous layer, a hole barrier layer, an electronic transmission layer and an electronic injection layer, which are subjected to vapor deposition on the transparent conducting oxide membrane sequentially, and a cathode which is subjected to vapor deposition on the electronic injection layer. Selenium or antimony in a certain mass ratio is doped in the electronic transmission layer, so that the transmission efficiency of current carriers of the device can be improved effectively, and the transmission capacity of the current carriers of the OLED device can be enhanced.
Description
Technical field
The present invention relates to the OLED field, relate in particular to structure of a kind of OLED device and preparation method thereof.
Background technology
As the new generation of green light source and the lighting technology of environmental protection and energy saving, with the ordinary light source ratio, OLED throws light on except flexible base plate, other illumination advantage is also arranged, as large-area illuminated by surface light source.How further improving the oled light effect is the field that still need improve present stage, therefore seems particularly crucial for how improving the enhancing of carrier transmission performance for the oled light effect among the OLED effectively.
Because most of organic materials all belong to the material of semi-insulating character, can produce very big interface potential barrier, the injectability of the charge carrier of reduction when therefore contacting with metal electrode.The method of the most frequently used raising charge carrier injectability is to mix, and forms approximate ohmic contact at the interface, and can increase the conductivity of organic layer.
As everyone knows, electronics is few son in the OLED carrier transport process, therefore in order to improve the luminous efficiency of device, carries out the n type in cathode portion and mixes and can play clearly effect.N type alloy commonly used is an alkali metal, as Li or Cs.Device architecture by professor's Kido design is ITO/NPB/Alq3/Li:Alq3/Al the earliest, but Li doped or Cs spread easily, will form luminous quenching centre if diffuse to luminescent layer.
Summary of the invention
The object of the present invention is to provide a kind of OLED device that can improve device current efficient, enhancing OLED device carrier transport ability and preparation method thereof.
For achieving the above object, the technical solution adopted in the present invention is: a kind of OLED device, it comprises the transparent conductive oxide film (2) that is deposited on the glass substrate (1), the hole injection layer (3), hole transmission layer (4), luminescent layer (5), electron transfer layer (6), the electron injecting layer (7) that form of evaporation and the negative electrode (8) of going up evaporation at electron injecting layer (7) successively on transparent conductive oxide film (2), doped selenium or antimony element in the described electron transfer layer (6) form a n type and mix in this electron transfer layer.
Further, the mass ratio of doped selenium or antimony element is 0.5%-10% in the described electron transfer layer (6).
The present invention also provides a kind of OLED preparation of devices method, carries out according to following steps:
Step 1): deposition one layer thickness is the transparent conductive oxide film of 10-2000nm on transparent glass substrate;
Step 2): the method that adopts vacuum evaporation on by the step 1) transparent conductive oxide film is evaporation hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, and electron injecting layer successively, wherein the doping mass percent is selenium or the antimony of 0.5%-10% in described electron transfer layer, and the evaporation rate controlled of described selenium or antimony is at 0.02-1 dust meter per second; The THICKNESS CONTROL of electron transfer layer is at 30-80nm;
Step 3): in step 2) adopts the metallic cathode of the method evaporation 800-2000nm of vacuum evaporation on the electron injecting layer that makes again.
Further, adopting sputter, chemical vapour deposition (CVD), spraying pyrolysis, sol-gel method or pulse laser sediment method to deposit a layer thickness in the described step 1) on transparent glass substrate is the transparent conductive oxide film of 10-2000nm.
Compared with prior art, the present invention has following beneficial effect: adopt more stable selenium or antimony that electron transfer layer is mixed and can prevent that diffuse dopants to luminescent layer from forming luminous quenching centre and causing on the one hand; Can well reduce the injection barrier of electronics on the other hand in conjunction with one deck electron injecting layer.Current efficiency height, the OLED device carrier transport ability of OLED device of the present invention are strong.
Description of drawings
Fig. 1 is the structure chart of OLED device according to the invention;
Fig. 2 be OLED device according to the invention after electron transfer layer mixes a certain proportion of selenium, the current density of light emitting-type device and the curve chart of luminous efficiency.
Embodiment
OLED to cathode construction of the present invention is described in detail below in conjunction with structure chart:
See also shown in Figure 1, a kind of OLED device comprise the transparent conductive oxide film 2 that is deposited on the glass substrate 1, on the transparent conductive oxide film 2 successively the hole injection layer 3 that forms of evaporation, hole transmission layer 4, luminescent layer 5, electron transfer layer 6, electron injecting layer 7 and on electron injecting layer 7 negative electrode 8 of evaporation, doped selenium or antimony element in the described electron transfer layer 6 form a n type and mix in this electron transfer layer.The mass ratio of doped selenium or antimony element is 0.5%-10% in the described electron transfer layer 6.
The present invention also provides OLED preparation of devices method, carries out according to following steps:
Step 1): deposition one layer thickness is the transparent conductive oxide film 2 of 10-2000nm on transparent glass substrate 1.
Step 2): the method that adopts vacuum evaporation on by step 1) transparent conductive oxide film 2 is evaporation hole injection layer 3, hole transmission layer 4, luminescent layer 5, electron transfer layer 6, and electron injecting layer 7 successively, wherein the doping mass percent is selenium or the antimony element of 0.5%-10% in described electron transfer layer 6, and the evaporation rate controlled of described selenium or antimony element is at 0.02-1 dust meter per second; The THICKNESS CONTROL of electron transfer layer 6 is at 30-80nm.
Step 3): in step 2) adopts the metallic cathode of the method evaporation 800-2000nm of vacuum evaporation on the electron injecting layer that makes again.
Adopting sputter, chemical vapour deposition (CVD), spraying pyrolysis, sol-gel method or pulse laser sediment method to deposit a layer thickness in the described step 1) on transparent glass substrate is the transparent conductive oxide film of 10-2000nm.
Embodiment 1:
An embodiment of a kind of OLED device according to the invention is a doped selenium element in electron transfer layer, and it constitutes: ITO/2-TNATA/NPB/CBP:Ir (ppy) 3/BCP/Alq
3: Se/LiF/Al; Wherein ITO is a glass substrate 1; 2-TNATA is a transparent conductive oxide film 2; NPB is a hole injection layer 3; CBP:Ir (ppy) 3 is a hole transmission layer 4; BCP is a luminescent layer 5; Alq
3: Se is the electron transfer layer 6 of doped selenium element; LiF is an electron injecting layer 7; Al is a negative electrode 8.
See also Fig. 2, in electron transfer layer, mix as can be seen behind a certain proportion of selenium, the luminous efficiency of device is significantly improved, and doping content is the luminous efficiency maximum of 3% device, and the J-V curve of the variation tendency of luminous efficiency and current density and electron type device is identical substantially.Since from the J-V characteristic curve of electron type device as can be known, when under big driving voltage, the electronics injectability of plain device is big all the better, but similar trend does not but appear from efficiency curve, this mainly is because under higher electron transport ability, quantitatively can not reach balance with the hole, and then it is not high to show in the device that undopes luminous efficiency corresponding under higher current density.Simultaneously also might be the cause owing to doped selenium, the hole blocking layer of electric transmission one side formation at luminescent layer effectively be limited in the hole in the luminescent layer, and then effectively improves the luminous efficiency of device.
Another embodiment according to the invention is an antimony dopant element in electron transfer layer, and it constitutes: ITO/2-TNATA/NPB/CBP:Ir (ppy) 3/BCP/Alq
3: Sb/LiF/Al; Wherein ITO is a glass substrate 1; 2-TNATA is a transparent conductive oxide film 2; NPB is a hole injection layer 3; CBP:Ir (ppy) 3 is a hole transmission layer 4; BCP is a luminescent layer 5; Alq
3: Sb is the electron transfer layer 6 of antimony dopant element; LiF is an electron injecting layer 7; Al is a negative electrode 8.
The above only is two kinds of execution modes of the present invention, it or not whole or unique execution mode, the conversion of any equivalence that those of ordinary skills take technical solution of the present invention by reading specification of the present invention is claim of the present invention and contains.
Claims (4)
1. OLED device, it comprises the transparent conductive oxide film (2) that is deposited on the glass substrate (1), the hole injection layer (3), hole transmission layer (4), luminescent layer (5), electron transfer layer (6), the electron injecting layer (7) that form of evaporation and the negative electrode (8) of going up evaporation at electron injecting layer (7) successively on transparent conductive oxide film (2), it is characterized in that: doped selenium or antimony element in the described electron transfer layer (6) form a n type and mix in this electron transfer layer.
2. OLED device according to claim 1 is characterized in that: the mass ratio of doped selenium or antimony element is 0.5%-10% in the described electron transfer layer (6).
3. OLED preparation of devices method, it is characterized in that: described preparation method carries out according to following steps:
Step 1): deposition one layer thickness is the transparent conductive oxide film of 10-2000nm on transparent glass substrate;
Step 2): the method that adopts vacuum evaporation on by the step 1) transparent conductive oxide film is evaporation hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, and electron injecting layer successively, wherein the doping mass percent is selenium or the antimony of 0.5%-10% in described electron transfer layer, and the evaporation rate controlled of described selenium or antimony is at 0.02-1 dust meter per second; The THICKNESS CONTROL of electron transfer layer is at 30-80nm;
Step 3): in step 2) adopts the metallic cathode of the method evaporation 800-2000nm of vacuum evaporation on the electron injecting layer that makes again.
4. a kind of OLED preparation of devices method as claimed in claim 3 is characterized in that: adopting sputter, chemical vapour deposition (CVD), spraying pyrolysis, sol-gel method or pulse laser sediment method to deposit a layer thickness in the described step 1) on transparent glass substrate is the transparent conductive oxide film of 10-2000nm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201110185663 CN102244204B (en) | 2011-07-04 | 2011-07-04 | OLED device and preparation method thereof |
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| CN 201110185663 CN102244204B (en) | 2011-07-04 | 2011-07-04 | OLED device and preparation method thereof |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102544387A (en) * | 2011-12-19 | 2012-07-04 | 陕西科技大学 | Top-illuminating OLED (organic light emitting diode) device and preparation method thereof |
| CN108529894A (en) * | 2017-03-06 | 2018-09-14 | Tcl集团股份有限公司 | A kind of BZO glass and preparation method, QLED devices and preparation method |
| CN108767137A (en) * | 2018-08-17 | 2018-11-06 | 信利光电股份有限公司 | A kind of OLED light source and light-emitting device |
| CN109004098A (en) * | 2018-08-03 | 2018-12-14 | 上海钥熠电子科技有限公司 | A kind of novel OLED device and its display, lighting device |
| CN109065741A (en) * | 2018-08-17 | 2018-12-21 | 信利光电股份有限公司 | A kind of OLED light source and light emitting device |
| CN113611805A (en) * | 2020-08-14 | 2021-11-05 | 广东聚华印刷显示技术有限公司 | Light emitting device, method of manufacturing the same, and light emitting apparatus |
| CN113809253A (en) * | 2021-09-06 | 2021-12-17 | 深圳市华星光电半导体显示技术有限公司 | Organic electroluminescent device and preparation method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030228486A1 (en) * | 2002-05-10 | 2003-12-11 | Syntec Gesellschaft Fuer Chemie Und Technologie Der Informationsaufzeichnung Mbh | Organic Red Electro-Luminescent Device Including A Hetrocyclic Emitter |
| CN101300692A (en) * | 2005-10-31 | 2008-11-05 | 新日铁化学株式会社 | Organic electroluminescent device |
-
2011
- 2011-07-04 CN CN 201110185663 patent/CN102244204B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030228486A1 (en) * | 2002-05-10 | 2003-12-11 | Syntec Gesellschaft Fuer Chemie Und Technologie Der Informationsaufzeichnung Mbh | Organic Red Electro-Luminescent Device Including A Hetrocyclic Emitter |
| CN101300692A (en) * | 2005-10-31 | 2008-11-05 | 新日铁化学株式会社 | Organic electroluminescent device |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102544387A (en) * | 2011-12-19 | 2012-07-04 | 陕西科技大学 | Top-illuminating OLED (organic light emitting diode) device and preparation method thereof |
| CN102544387B (en) * | 2011-12-19 | 2014-12-24 | 陕西科技大学 | Top-illuminating OLED (organic light emitting diode) device and preparation method thereof |
| CN108529894A (en) * | 2017-03-06 | 2018-09-14 | Tcl集团股份有限公司 | A kind of BZO glass and preparation method, QLED devices and preparation method |
| CN109004098A (en) * | 2018-08-03 | 2018-12-14 | 上海钥熠电子科技有限公司 | A kind of novel OLED device and its display, lighting device |
| CN108767137A (en) * | 2018-08-17 | 2018-11-06 | 信利光电股份有限公司 | A kind of OLED light source and light-emitting device |
| CN109065741A (en) * | 2018-08-17 | 2018-12-21 | 信利光电股份有限公司 | A kind of OLED light source and light emitting device |
| CN113611805A (en) * | 2020-08-14 | 2021-11-05 | 广东聚华印刷显示技术有限公司 | Light emitting device, method of manufacturing the same, and light emitting apparatus |
| CN113809253A (en) * | 2021-09-06 | 2021-12-17 | 深圳市华星光电半导体显示技术有限公司 | Organic electroluminescent device and preparation method thereof |
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| CN102244204B (en) | 2013-04-10 |
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