CN108872151A - It is a kind of based on T shape to and nano wire pair optical sensor - Google Patents
It is a kind of based on T shape to and nano wire pair optical sensor Download PDFInfo
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- CN108872151A CN108872151A CN201710907474.8A CN201710907474A CN108872151A CN 108872151 A CN108872151 A CN 108872151A CN 201710907474 A CN201710907474 A CN 201710907474A CN 108872151 A CN108872151 A CN 108872151A
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Abstract
The present invention relates to it is a kind of based on T shape to and nano wire pair optical sensor, including dielectric layer, metal Nano structure and substrate, metal Nano structure is dimeric structure, metal Nano structure includes the line style metal nano that is set in substrate to and positioned at T-type metal nano pair between line style metal nano pair, the distance between two respective longitudinal edges of T-type metal nanometer line of the distance between the both ends of the horizontal edge of each T-type metal nanometer line and corresponding line style metal nanometer line are equal, the equal length of the horizontal edge of the length and T-type metal nanometer line of the line style metal nanometer line, the width of the width of the longitudinal edge of T-type metal nanometer line and the width of horizontal edge and line style metal nanometer line is equal, the height of T-type metal nanometer line is equal with the height of line style metal nanometer line.The structure is simple, and preparation process requires difficulty to substantially reduce, and has sensing effect well, and the optical sensor of the structure can be easy to improve the sensitivity of sensor.
Description
Technical field
The present invention relates to sensor fields, and in particular to it is a kind of based on T shape to and nano wire pair optical sensor.
Background technique
Sensor micromation, automation, selectivity, stability, sensitivity, the response time and in terms of
It is required that higher and higher, the development and application of novel sensing material are increasingly taken seriously.Using new material production novel sensor
One of important directions as research, it is especially noticeable with the research that nano wire makees sensor sensing material.This is essentially consisted in
Monodimension nanometer material has huge specific surface area and very high surface-active, so particularly sensitive to ambient enviroment.
Verellen N in 2011 et al. exists《Plasmon Line Shaping Using Nanocrosses for
High Sensitivity Localized Surface Plasmon Resonance Sensing》In propose one kind and be based on
The Meta Materials sensor that X-type and nano wire combine is X-type on the left of the sensor, and right side is nano wire, their material is all
It is composed of gold, the three-decker formed by being followed successively by medium, gold, substrate from top to bottom, substrate is glass material.In the structure
X-type structure has the characteristics that angle control, but above structure is relatively difficult during the preparation process, and preparation process is more demanding,
And the influence of the structure, the sensitivity of the sensor is not high, is unable to satisfy the requirement of client's needs sometimes.
Summary of the invention
The object of the present invention is to provide a kind of structures it is simple, easy to process and greatly improve sensitivity based on T shape pair
With the optical sensor of nano wire pair.
To achieve the above object, it is of the invention it is a kind of based on T shape to and the optical sensor of nano wire pair use following skill
Art scheme：It is a kind of based on T shape to and nano wire pair optical sensor, including dielectric layer, the gold from top to bottom set gradually
Belong to nanostructure and substrate, metal Nano structure are dimeric structure, metal Nano structure includes the upper surface for being set to substrate
On line style metal nano pair, line style metal nano to include parallel interval setting the line style metal nano extended longitudinally
Line, metal Nano structure further include that the T-type metal on the upper surface for being relatively arranged on substrate between line style metal nanometer line is received
Rice is right, and T-type metal nano is to including the setting of longitudinal edge relative spacing, horizontal edge T-type metal nanometer line disposed in parallel, each T-type
The distance between the both ends of the horizontal edge of metal nanometer line and corresponding line style metal nanometer line and two T-type metal nanometer lines are respectively
Equal, the equal length of the horizontal edge of the length and T-type metal nanometer line of the line style metal nanometer line of the distance between longitudinal edge,
The width of the width of the longitudinal edge of T-type metal nanometer line and the width of horizontal edge and line style metal nanometer line is equal, T-type metal nano
The height of line is equal with the height of line style metal nanometer line.
The both ends of the horizontal edge are 10-60nm at a distance from corresponding line style metal nanometer line.
The both ends of the horizontal edge are 40nm at a distance from corresponding line style metal nanometer line.
The length of the line style metal nanometer line is 80-150nm.
The length of the line style metal nanometer line is 100nm.
The length of the longitudinal edge of the T-type metal nanometer line is 30nm-90nm.
The width of the line style metal nanometer line is 10-50nm.
The width of the line style metal nanometer line is 20nm.
The height of the T-type metal nanometer line is 20-50nm.
The height of the T-type metal nanometer line is 30nm.
Beneficial effects of the present invention：Metal Nano structure is dimeric structure, including line style metal nano to be located at line
T-type metal nano pair between type metal nano pair, the both ends of the horizontal edge of each T-type metal nanometer line are golden with corresponding line style
The distance between two respective longitudinal edges of T-type metal nanometer line of the distance between category nano wire are equal, and the line style metal is received
The equal length of the horizontal edge of the length and T-type metal nanometer line of rice noodles, the width of the longitudinal edge of T-type metal nanometer line and the width of horizontal edge
The width of degree and line style metal nanometer line is equal, and the height of T-type metal nanometer line is equal with the height of line style metal nanometer line.
The structure is simple, and preparation process requires difficulty to substantially reduce, and has sensing effect well, and the optical sensor of the structure can
To be easy to improve the sensitivity of sensor.Light can be along any direction incidence, and there is no bring sensitivity because of incident angle
Difference.This optical sensor is only more sensitive to the refractive index of object, unrelated with the intensity of light, and no matter light is from which direction
Incidence detects and is showed with the variation of wavelength as long as being irradiated in this structure.
Detailed description of the invention
Fig. 1 be it is of the invention it is a kind of based on T shape to and a kind of structure of embodiment of optical sensor of nano wire pair show
It is intended to；
Fig. 2 is the top view of Fig. 1；
Fig. 3 be T-type metal nano to and line style metal nano pair positional structure schematic diagram；
Fig. 4 is the Spectral Extinction curve graph of the obtained optical sensor of theoretical calculation in the present embodiment；
Fig. 5 is the incident wavelength of the obtained optical sensor of theoretical calculation and index of refraction relationship figure in the present embodiment；
Fig. 6 is the relational graph of the quality factor of the obtained optical sensor of theoretical calculation in the present embodiment, wherein P1It is shortwave
Variation of the wavelength with refractive index, P2It is variation of the long wavelength with refractive index, their relationship is FOM=m (nm RIU-1)/
The variation of wavelength when FWHM (nm), m are refraction index changings in a unit, FWHM are that half-wave is wide.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art's every other embodiment obtained belong to what the present invention protected
Range.
It is of the invention it is a kind of based on T shape to and nano wire pair optical sensor embodiment：As shown in figs 1 to 6, it wraps
The dielectric layer 1, metal Nano structure and substrate 2 from top to bottom set gradually is included, substrate 2 is quartz plate, metal Nano structure
For dimeric structure and it is embedded in substrate 2.Metal Nano structure includes being set on the upper surface of substrate 2 to have parallel interval
To 3, the length of line style metal nanometer line 5 extends longitudinally the line style metal nano of the line style metal nanometer line 5 of setting.Metal is received
Rice structure further includes in the T-type metal nano being oppositely arranged between line style metal nanometer line 5 on the upper surface of substrate 2 to 4, T-type
Metal nano includes the setting of 8 relative spacing of longitudinal edge, the T-type metal nanometer line 6 disposed in parallel of horizontal edge 7 to 4.Wherein, each T-type metal
D and two T-type metal nanometer line 6 of the distance between the both ends of the horizontal edge 7 of nano wire 6 and corresponding line style metal nanometer line 5 is each
From the distance between longitudinal edge 8 D it is equal, the length L of the horizontal edge 7 of the length L and T-type metal nanometer line 6 of line style metal nanometer line 5
It is equal, the width W phase of the width W of the longitudinal edge 8 of T-type metal nanometer line 6 and the width W of horizontal edge 7 and line style metal nanometer line 5
Deng the height H of T-type metal nanometer line 6 and the height H of line style metal nanometer line 5 are equal.Light can be along any direction incidence, no
In the presence of the difference for bringing sensitivity because of incident angle.This optical sensor is only more sensitive to the refractive index of object, with
The intensity of light is unrelated, and no matter light is incident from which direction, detects and as long as being irradiated in this structure with wavelength
Variation shows.Line style metal nano is all made of metallic silver at dielectric layer 1 is air to 4 to 3 and T-type metal nano.
The both ends of the horizontal edge 7 of each T-type metal nanometer line 6 are 40nm with corresponding 5 distance D of line style metal nanometer line.Line
The length of type metal nanometer line 5 is 100nm.The length S of the longitudinal edge 8 of T-type metal nanometer line 6 is 40nm.T-type metal nanometer line 6
Longitudinal edge 8 width be 20nm.The height H of T-type metal nanometer line 6 is 30nm.
Metal Nano structure is dimeric structure, and above structure is simple, and preparation process requires difficulty to substantially reduce, and is had very well
Sensing effect, and the optical sensor of the structure can be easy improve sensor sensitivity.The machine of the optical sensor
Reason is promoted between each metal nanometer line by the parameter of the parameter and line style metal nano pair that adjust T shape metal nano pair
Plasma interaction occur generate different spectral response, realize sensing effect.
It is above-mentioned based on T shape to and nano wire the preparation process of the optical sensor of structure is included the following steps：
Step 1. cleans the substrate that material is quartz：First substrate is surface-treated, then carries out prebake conditions removal due to table
Surface treatment and bring vapor, chemicals.
Step 2. spin coating：Spraying gluing method is selected, spin coating will be by drop glue, low speed rotation, the several steps of high speed rotation
Suddenly.
Step 4. exposure：Photoresist is exposed under the action of mask plate, preparation T shape is to, nano wire pair.
Step 5. electron beam evaporation plating：Using electron beam evaporation system, by metal evaporation to T shape to the hole of, nano wire pair
In.
Step 6. development：Corrosion development is carried out with developer solution to the photoresist after exposure.
Step 7. cleaning：Washing away photoresist can be obtained by corresponding structure.As shown in Figure 3.
Belt sensor is simulated using the wave optics module of finite element electromagnetic simulation software Comsol Multiphysics
Sensing characteristics.A structural model should be constructed in software first and then periodic boundary condition is set again, it is anti-for boundary
Penetrating situation can be eliminated the effects of the act by building perfect domination set, and last total is simulated.Calculate obtained sensing
The Spectral Extinction curve graph of device, as shown in Figure 4.The incident wavelength and index of refraction relationship figure for calculating obtained sensor, such as Fig. 5 institute
Show.The relational graph for calculating the quality factor of obtained sensor is as shown in Figure 6.
In other embodiments of the invention, the length of line style metal nanometer line is 80nm；The length of line style metal nanometer line
Degree is 150nm；The length of the longitudinal edge of T-type metal nanometer line is 30nm；The length of the longitudinal edge of T-type metal nanometer line is 90nm；T-type
The width of the longitudinal edge of metal nanometer line is 10nm；The width of the longitudinal edge of T-type metal nanometer line is 50nm；T-type metal nanometer line
Height is 20nm；The height of T-type metal nanometer line is 50nm；The both ends of horizontal edge are at a distance from corresponding line style metal nanometer line
10nm；The both ends of horizontal edge are 60nm at a distance from corresponding line style metal nanometer line.
Claims (10)
1. it is a kind of based on T shape to and nano wire pair optical sensor, including dielectric layer, the metal from top to bottom set gradually
Nanostructure and substrate, it is characterised in that：Metal Nano structure is dimeric structure, and metal Nano structure includes being set to substrate
Upper surface on line style metal nano pair, line style metal nano to include parallel interval setting extend longitudinally line style gold
Belong to nano wire, metal Nano structure further includes the T-type on the upper surface for being relatively arranged on substrate between line style metal nanometer line
Metal nano pair, T-type metal nano is to including the setting of longitudinal edge relative spacing, horizontal edge T-type metal nanometer line disposed in parallel, each institute
State the distance between the both ends of the horizontal edge of T-type metal nanometer line and corresponding line style metal nanometer line and two T-type metal nanos
The distance between the respective longitudinal edge of line is equal, the length of the horizontal edge of the length and T-type metal nanometer line of the line style metal nanometer line
Spend equal, the width of the width of the longitudinal edge of T-type metal nanometer line and the width of horizontal edge and line style metal nanometer line is equal, T-type
The height of metal nanometer line is equal with the height of line style metal nanometer line.
2. it is according to claim 1 based on T shape to and nano wire pair optical sensor, it is characterised in that：The horizontal edge
Both ends at a distance from corresponding line style metal nanometer line be 10-60nm.
3. it is according to claim 1 based on T shape to and nano wire pair optical sensor, it is characterised in that：The horizontal edge
Both ends at a distance from corresponding line style metal nanometer line be 40nm.
4. it is according to claim 1 based on T shape to and nano wire pair optical sensor, it is characterised in that：The line style
The length of metal nanometer line is 80-150nm.
5. it is according to claim 4 based on T shape to and nano wire pair optical sensor, it is characterised in that：The line style
The length of metal nanometer line is 100nm.
6. it is according to claim 1 based on T shape to and nano wire pair optical sensor, it is characterised in that：The T-type gold
The length for belonging to the longitudinal edge of nano wire is 30nm-90nm.
7. it is according to claim 1 based on T shape to and nano wire pair optical sensor, it is characterised in that：The line style
The width of metal nanometer line is 10-50nm.
8. it is according to claim 7 based on T shape to and nano wire pair optical sensor, it is characterised in that：The line style
The width of metal nanometer line is 20nm.
9. it is according to claim 1 based on T shape to and nano wire pair optical sensor, it is characterised in that：The T-type gold
The height for belonging to nano wire is 20-50nm.
10. it is according to claim 9 based on T shape to and nano wire pair optical sensor, it is characterised in that：The T-type
The height of metal nanometer line is 30nm.
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Cited By (2)
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| CN111007036A (en) * | 2019-12-30 | 2020-04-14 | 郑州大学 | Refractive index sensor based on flat plate symmetrical structure |
| CN118258789A (en) * | 2024-03-21 | 2024-06-28 | 南京航空航天大学 | Terahertz metamaterial sensor with multiple resonance peak high Q values |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111007036A (en) * | 2019-12-30 | 2020-04-14 | 郑州大学 | Refractive index sensor based on flat plate symmetrical structure |
| CN111007036B (en) * | 2019-12-30 | 2022-03-25 | 郑州大学 | Refractive index sensor based on flat plate symmetrical structure |
| CN118258789A (en) * | 2024-03-21 | 2024-06-28 | 南京航空航天大学 | Terahertz metamaterial sensor with multiple resonance peak high Q values |
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| CN108872151B (en) | 2023-06-16 |
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