CN102244002A - Preparation method of heterojunction with metal/semiconductor nanometer wire crossing structure - Google Patents
Preparation method of heterojunction with metal/semiconductor nanometer wire crossing structure Download PDFInfo
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Abstract
The invention discloses a preparation method of a heterojunction with a metal/semiconductor nanometer wire crossing structure, which comprises the following steps: two pairs of metallic thin-film electrodes are prepared on the semiconductor nanometer wire by using an UV-lithography method, wherein a pair of metallic thin-film electrodes are communicated by the semiconductor nanometer wire and are in an ohmic contact with the semiconductor nanometer wire; AC (alternating current) electric fields are applied to the other pair of metallic thin-film electrodes; a metallic nanometer wire is adsorbed on the other pair of metallic thin-film electrodes applied with the AC (alternating current) electric fields; and the metallic nanometer wire is crossed and in a Schottky contact with the semiconductor nanometer wire to form the heterojunction with the metal/semiconductor nanometer wire crossing structure. The preparation method disclosed by the invention is simple and practicable, is stable and reliable, and can be applied to various nanometer sizes of electronic components and optical elements including metallic-semiconductor field effect tubes with Schottky diodes or metal nanometer wires as grids, such as namometer photoelectric detectors, gas sensors, solar batteries and the like.
Description
One, technical field
The present invention relates to a kind of preparation method of semiconductor device, specifically the preparation method of metal/semiconductor nanowire crossbars structure heterojunction.
Two, background technology
The metal/semiconductor heterojunction especially plays an important role in the preparation of micro-nano device at semiconductor device.In semiconductor device, need usually to utilize the metal that forms good Ohmic contact with semiconductor, and utilize metal-semiconductor rectification contact performance can make diode, be i.e. Schottky diode as electrode the input or output current.Compare with the p-n junction diode, the schottky junction diode is because forward current mainly is to enter metal by the majority carrier in the semiconductor to form, it is majority carrier device, there is not charge-storage effect, have switching frequency height, forward conduction voltage low, do not have advantages such as minority carrier lifetime and reverse-recovery problems, thereby have better photoelectric characteristic, more be applicable to ultrahigh speed switching device, photodetector, solar cell and semiconductor laser etc.
At present, the generation type of metal/semiconductor nano wire hetero structure mainly contains following several: 1, the synthetic semiconductor nanowires that is inlaid with metallic particles of liquid phase forms the one-dimensional nano structure that includes the metal/semiconductor heterojunction; 2, in conjunction with template and electrochemical deposition technique, segmented deposition semiconductor and metal material, the nano-wire array top selective deposition metallic particles that forms the metal/semiconductor nanowire heterojunction or deposit in template in template forms metallic particles/semiconductor nanowires heterojunction; 3, on single semiconductor nanowires, selection area epitaxial growth metallic film or by secondary photoetching (electron beam lithography or ultraviolet photolithographic) and electron beam evaporation technique, the metal electrode of one group of ohmic contact and the metal electrode of one group of Schottky contacts on the evaporation form metallic film/semiconductor nanowires heterojunction respectively.Preceding two kinds of methods need be carried out strictness control to experimentation, and heterojunction controls difficulty on target devices, and the third method apparatus expensive, the secondary light carving technology is comparatively complicated, and can exert an influence to device performance to a certain extent.Thereby, a kind of reliable and stable, technology can with the preparation method of metal/semiconductor nanowire crossbars structure heterojunction still have great significance in field of nanometer devices.
Three, summary of the invention
The present invention is directed to above-mentioned existing in prior technology weak point, aim to provide that a kind of preparation method is simple, the preparation method of the metal/semiconductor nanowire crossbars structure heterojunction that is easy to realize.
Technical solution problem of the present invention adopts following technical scheme:
The preparation method's of metal/semiconductor nanowire crossbars structure heterojunction of the present invention characteristics are: semiconductor nanowires 3 levels are dispersed on the silicon chip 1 that is covered with insulating barrier 2, method by a ultraviolet photolithographic prepares two pairs of metal film electrodes on insulating barrier 2, wherein pair of metal membrane electrode 4 is communicated with by described semiconductor nanowires 3, and described metal film electrode 4 is ohmic contact with semiconductor nanowires 3; To be dispersed with the hanging drop of metal nanometer line 5 on insulating barrier 2, another is applied AC field to metal film electrode 6, metal nanometer line 5 is adsorbed onto on the metal film electrode 6, described metal nanometer line 5 intersects with described semiconductor nanowires 3, be Schottky contacts, form metal/semiconductor nanowire crossbars structure heterojunction.
The preparation method's of metal/semiconductor nanowire crossbars structure heterojunction of the present invention characteristics also are: described semiconductor nanowires 3 and described metal nanometer line 5 are not less than 10 μ m, the diameter mono-crystalline structures less than 1 μ m for length.
The preparation method's of metal/semiconductor nanowire crossbars structure heterojunction of the present invention characteristics also are: described semiconductor nanowires 3 is element semiconductor, II-VI family semiconducting compound, I-VI family's semiconducting compound or III-V family semiconducting compound;
The preparation method's of metal/semiconductor nanowire crossbars structure heterojunction of the present invention characteristics also are: described element semiconductor is Si or Ge; Described II-VI family semiconducting compound is ZnO, ZnS, ZnSe, ZnTe, CdS, CdSe or CdTe; Described I-VI family semiconducting compound is CuO, CuS, CuSe or CuTe; Described III-V family semiconducting compound is GaAs or In
2Sb
3
The preparation method's of metal/semiconductor nanowire crossbars structure heterojunction of the present invention characteristics also are: when described semiconductor nanowires 3 is the n N-type semiconductor N, described two pairs of metal film electrodes are to comprise among In, Ti, Ag, the Al one or more, and the work content of described two pairs of metal film electrodes is lower than the work content of described semiconductor nanowires 3; Described metal nanometer line 5 is to comprise among Pt, Au, Ni, the Cu one or more, and the work content of described metal nanometer line 5 is greater than the affinity of described semiconductor nanowires 3 with electronics;
When described semiconductor nanowires 3 was the p N-type semiconductor N, described two pairs of metal film electrodes were to comprise among Pt, Au, Ni, the Cu one or more, and the work content of described two pairs of metal film electrodes is greater than the work content of described semiconductor nanowires 3; Described metal nanometer line 5 is to comprise among In, Ti, Ag, the Al one or more, and the work content of described metal nanometer line 5 is lower than the affinity of described semiconductor nanowires 3 and electronics.
Preparation process of the present invention is as follows:
Compared with the prior art, beneficial effect of the present invention is embodied in:
The present invention prepares metal nanometer line and semiconductor nanowires respectively, by a photoetching, utilizes the electric field suction-operated, can directly finish the formation and the device preparation of heterojunction, and process is simple.In addition, the metal nanometer line that is Schottky contacts with semiconductor nanowires can also be used as grid, structure metal-semiconductor field effect pipe.This heterojunction more is applicable to fields such as nano photoelectric detector owing to have very little node, is expected to obtain higher sensitivity and speed of detection faster.
Four, description of drawings
Fig. 1 is a metal/semiconductor nanowire crossbars structure heterojunction preparation method's of the present invention flow chart.
Fig. 2 is the structural representation of metal/semiconductor nanowire crossbars structure heterojunction device of the present invention.
Wherein 1 is silicon chip, and 2 is insulating barrier, and 3 is semiconductor nanowires, and 4 is the pair of metal membrane electrode that is communicated with semiconductor nanowires, and 5 is metal nanometer line, and 6 is the pair of metal membrane electrode that is communicated with metal nanometer line.
Five, embodiment
Describe the preparation method of metal/semiconductor nanowire crossbars structure heterojunction of the present invention in detail below in conjunction with accompanying drawing, non-limiting examples is as follows.
Embodiment 1:
Cleaning had a 300nm SiO
2The silicon chip of insulating barrier is close to by the grown substrate of p type ZnS nano wire of chemical vapour deposition technique (CVD), along continuous straight runs promotes silicon chip gently, frictional force by orientation, realize even, the level dispersion of ZnS nano wire on silicon chip, by electron microscope observation, make its minute bulk density be about 2-10 root/mm
2Evenly behind the spin coating positive photoresist, utilize the particular mask plate to carry out uv-exposure and development, make 2 pairs of electrode patterns by lithography, the distance of every pair of eletrode tip is 5 μ m, and wherein the pair of electrodes figure is communicated with by semiconductor nanowires.Afterwards, utilize the thick metal A u of 50nm on the electron beam evaporation technique evaporation,, then remove the metal of unexposed photoresist and top evaporation thereof with acetone as Ohm contact electrode.
Subsequently, in advance synthetic ultrasonic being dispersed in of Al nano wire that take a morsel forms suspension in the absolute ethyl alcohol, and be one after another drop of on the silicon chip for preparing metal electrode with the absorption of glue head dropper, makes its minute bulk density be about 2-10 root/mm
2, unsettled electrode two ends are added a frequency 1kHz, voltage 30V at another
RmsAlternating current, the Al nano wire is moved on two relative electrodes at electric field action, be communicated with electrode and intersect vertically with the ZnS nano wire, form the metal/semiconductor nanowire crossbars structure heterojunction of Schottky contacts, its structure as shown in Figure 2.
Embodiment 2:
Ultrasonic being dispersed in the isopropyl alcohol of n type CdS nano wire that a small amount of liquid phase method is synthetic in advance drawn one with glue head dropper, and what drop in the cleaning that slightly tilts along specific direction has a 100nm HfO
2On the silicon chip of insulating barrier, realize that the level of CdS nano wire is disperseed, make its minute bulk density be about 2-10 root/mm
2Treat after the solvent evaporation that evenly behind the spin coating positive photoresist, uv-exposure also develops, and makes 2 pairs of electrode patterns by lithography, wherein the pair of electrodes figure is communicated with by semiconductor nanowires.Afterwards, utilize the double-level-metal electrode of 80nm In/20nm Au on the electron beam evaporation technique evaporation,, then remove the metal of unexposed photoresist and top evaporation thereof with acetone as Ohm contact electrode.
Subsequently, synthetic in advance ultrasonic being dispersed in of Au nano wire formed suspension in the absolute ethyl alcohol, drop on the silicon chip for preparing metal electrode, divide bulk density to be about 2-10 root/mm
2At another unsettled electrode two ends are added a frequency 1kHz, voltage 30V
RmsAlternating current, the Au nano wire is moved on two relative electrodes at electric field action, be communicated with electrode and also intersect with the CdS nano wire, form the metal/semiconductor nanowire crossbars structure heterojunction of Schottky contacts.
Claims (5)
1. the preparation method of metal/semiconductor nanowire crossbars structure heterojunction, it is characterized in that: semiconductor nanowires (3) level is dispersed on the silicon chip (1) that is covered with insulating barrier (2), method by a ultraviolet photolithographic goes up two pairs of metal film electrodes of preparation at insulating barrier (2), wherein pair of metal membrane electrode (4) is communicated with by described semiconductor nanowires (3), and described metal film electrode (4) is ohmic contact with semiconductor nanowires (3); The hanging drop that will be dispersed with metal nanometer line (5) is on insulating barrier (2), another is applied AC field to metal film electrode (6), metal nanometer line (5) is adsorbed onto on the metal film electrode (6), described metal nanometer line (5) intersects with described semiconductor nanowires (3), be Schottky contacts, form metal/semiconductor nanowire crossbars structure heterojunction.
2. preparation method according to claim 1 is characterized in that: described semiconductor nanowires (3) and described metal nanometer line (5) are not less than 10 μ m, the diameter mono-crystalline structures less than 1 μ m for length.
3. preparation method according to claim 1 is characterized in that: described semiconductor nanowires (3) is element semiconductor, II-VI family semiconducting compound, I-VI family's semiconducting compound or III-V family semiconducting compound;
4. preparation method according to claim 3 is characterized in that: described element semiconductor is Si or Ge; Described II-VI family semiconducting compound is ZnO, ZnS, ZnSe, ZnTe, CdS, CdSe or CdTe; Described I-VI family semiconducting compound is CuO, CuS, CuSe or CuTe; Described III-V family semiconducting compound is GaAs or In
2Sb
3
5. preparation method according to claim 1, it is characterized in that: when described semiconductor nanowires (3) is the n N-type semiconductor N, described two pairs of metal film electrodes are to comprise among In, Ti, Ag, the Al one or more, and the work content of described two pairs of metal film electrodes is lower than the work content of described semiconductor nanowires (3); Described metal nanometer line (5) is to comprise among Pt, Au, Ni, the Cu one or more, and the work content of described metal nanometer line (4) is greater than the affinity of described semiconductor nanowires (3) with electronics;
When described semiconductor nanowires (3) was the p N-type semiconductor N, described two pairs of metal film electrodes were to comprise among Pt, Au, Ni, the Cu one or more, and the work content of described two pairs of metal film electrodes is greater than the work content of described semiconductor nanowires (3); Described metal nanometer line (5) is to comprise among In, Ti, Ag, the Al one or more, and the work content of described metal nanometer line (5) is lower than the affinity of described semiconductor nanowires (3) and electronics.
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| CN102544183A (en) * | 2012-02-17 | 2012-07-04 | 合肥工业大学 | Silicon nanowire Schottky junction type solar battery and preparation method for same |
| CN102569485A (en) * | 2011-12-31 | 2012-07-11 | 浙江大学 | Near-infrared band full silicon-base nanometer photoelectric detector |
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