CN102496648A - Ultraviolet light single-photon detector with built-in negative feedback metal-semiconductor-metal structure - Google Patents
Ultraviolet light single-photon detector with built-in negative feedback metal-semiconductor-metal structure Download PDFInfo
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- CN102496648A CN102496648A CN201110382697XA CN201110382697A CN102496648A CN 102496648 A CN102496648 A CN 102496648A CN 201110382697X A CN201110382697X A CN 201110382697XA CN 201110382697 A CN201110382697 A CN 201110382697A CN 102496648 A CN102496648 A CN 102496648A
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- 239000002184 metal Substances 0.000 title claims abstract description 33
- 239000004065 semiconductor Substances 0.000 claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 239000000463 material Substances 0.000 claims description 18
- 229910002704 AlGaN Inorganic materials 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- 230000007547 defect Effects 0.000 claims description 5
- 238000002360 preparation method Methods 0.000 claims description 5
- 238000001514 detection method Methods 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 18
- 238000012369 In process control Methods 0.000 abstract 1
- 238000004070 electrodeposition Methods 0.000 abstract 1
- 238000010965 in-process control Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 4
- 230000003044 adaptive effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 230000003412 degenerative effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910003465 moissanite Inorganic materials 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
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- 230000000977 initiatory effect Effects 0.000 description 1
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Abstract
An ultraviolet light single-photon detector with a built-in negative feedback metal-semiconductor-metal structure comprises a substrate, a buffer layer, a n-type semiconductor, an interdigital film resistor, an anode electrode and an interdigital electrode from bottom to top, wherein the buffer layer can grow on the substrate, the n-type semiconductor is arranged on the substrate or the buffer layer, the interdigital film resistor is arranged on the n-type semiconductor, anode electrode position forms the anode electrode on the film resistor, and the interdigital electrode is arranged on the uppermost layer. A cathode electrode and the n-type semiconductor form schottky junction, and the anode electrode is deposited on the film resistor. The ultraviolet light single-photon detector with the built-in negative feedback metal-semiconductor-metal structure solves problems of difficulty in process control and expensive cost caused by complex process flow of ultraviolet light single-photon detectors with a p-n structure and a p-i-n structure.
Description
Technical field
The present invention relates to a kind of novelly based on metal-semiconductor-metal ultraviolet light single-photon detector manufacture method extremely, this structure also is applicable to its all band metal-semiconductor-metal single-photon detector simultaneously.
Background technology
The ultraviolet light particularly detection of day blind ultraviolet band has extremely important application in space exploration and military aspect.At present, that the Photo Counting System of ultraviolet band is used is photomultiplier (PMT), but the photomultiplier transit pipe volume is big, frangible, operating voltage is high and cost an arm and a leg, so little, the low-cost solid-state ultraviolet detector of volume just has very important advantage.
The solid-state ultraviolet light wave band single-photon detector that can access at present is p-n junction structure or p-i-n structure; This panel detector structure is complicated, needs growing n-type and p N-type semiconductor N simultaneously, the extremely difficult control of defect concentration; Need to form ohmic contact simultaneously between electrode and the semiconductor; Technology is difficult to form good ohmic contact, the process control difficulty, and preparation cost is high.
And metal-semiconductor-metal (MSM) structure detector (physics of semiconductor devices; Third edition; S.M.Sze, Wiley Interscience) there is not the p N-type semiconductor N, electric capacity is little; And be easy to make, so the ultraviolet light detector of MSM structure has very high using value.Be depicted as typical MSM structure detector profile like Figure 1A, MSM 100 structure detectors are by substrate 101, and n N-type semiconductor N 102 constitutes with interdigited electrode 103 and 104; Its front electrode structure shown in Figure 1B, electrode 103-1,103-2 ... 103-N forms the interdigitated cathode electrode; Electrode 104-1,104-2 ..., 104-N forms the interdigitated anode electrode.Fig. 1 C is the equivalent circuit structure figure of MSM100 structure detector, and MSM 100 is made up of two back-to-back Schottky diodes, when adding operating voltage; Form depletion layer between the interdigited electrode, photon is absorbed the generation photoelectron at depletion region, and photoelectron-transfer or drift motion are collected by interdigited electrode and produced the signal of telecommunication; Thereby can survey light signal, also be in the news (F.Xie in 2011 based on the ultraviolet light snowslide pipe of MSM structure; IEEE ELECTRON DEVICE LETTERS; VOL.32, NO.9, SEPTEMBER 2011).But traditional M SM structure detector needs the blanking circuit of external complicacy to realize single photon detection, has increased the cost of system design.
Summary of the invention
The present invention seeks to: propose a kind of novel based on the built-in negative feedback ultraviolet light of MSM structure single-photon detector structure with and manufacturing approach.
Technical scheme of the present invention is: based on the built-in negative feedback ultraviolet light of MSM structure single-photon detector structure, comprise substrate, n N-type semiconductor N, film resistor and interdigited electrode; Preferably, said structure ultraviolet light single-photon detector once comprises substrate from bottom to up, the n N-type semiconductor N, and cathode electrode and n N-type semiconductor N constitute schottky junction, and film resistor is deposited on the n N-type semiconductor N, and anode electrode is grown on the film resistor.
The preparation method of said MSM structure ultraviolet light single-photon detector comprises the steps:
(1) on substrate, forms the n N-type semiconductor N, the multi-buffering-layer of also can growing before, regrowth n N-type semiconductor N;
(2) growing film resistance and etching on the n N-type semiconductor N make it to form the shape of interdigitated anode electrode;
(3) deposition of electrode forms interdigitated cathode electrode and anode electrode.
Shown in Fig. 2 E, said built-in negative feedback MSM structure ultraviolet light single-photon detector structure comprises substrate 201, n N-type semiconductor N 202; Cathode electrode 204 is deposited on the n N-type semiconductor N and forms Schottky contacts, film resistor 203-1,203-2 ... 203-N is deposited on and forms interdigitated resistance, anode electrode 205-1,205-2 on the n N-type semiconductor N ... 205-N is deposited on and forms anode electrode 205 on the film resistor 203, and interdigitated negative electrode 204, film resistor 203 and anode electrode 205 are shown in Fig. 2 F.Wherein electrode 204 and 205 can be transparent metal material.
The technological process of said ultraviolet light single-photon detector MSM 200 comprises:
Step 1, shown in Fig. 2 A, deposit resilient coating on substrate, the lattice that reduces between substrate and the n N-type semiconductor N is adaptive, thereby reduces defect concentration, forms substrate 201;
Step 2, shown in Fig. 2 B, deposit n N-type semiconductor N 202 on substrate 201;
Step 3, shown in Fig. 2 C, deposition film resistance 203 on n N-type semiconductor N 202;
Step 4, shown in Fig. 2 D, etched film resistance 203 forms interdigitated resistance 203-1,203-2;
Step 5, shown in Fig. 2 E, deposit forms anode electrode 205-1,205-2 and cathode electrode 204-1,205-2, cathode electrode and n N-type semiconductor N form Schottky contacts, and anode electrode is deposited on the film resistor.
Said ultraviolet light single-photon detector MSM 200 equivalent circuit diagrams such as Fig. 2 F, it is when work, and the schottky junction that negative electrode and n N-type semiconductor N form among the MSM200 is anti-inclined to one side; And operating voltage surpasses its puncture voltage, and detector is operated under the Geiger mode angular position digitizer (Geiger Mode) [D.Renker, Nuclear Instruments and Methods in Physics Research A 567 (2006) 48-56]; At this moment form depletion layer at detector MSM 200 negative electrodes 204 and 205 on anode, electric field strength is high in the depletion layer, when unglazed; At this moment schottky junction is in anti-state partially among the detector MSM 200, schottky junction equivalence and an electric capacity, and operating voltage mainly is distributed on the Schottky and ties; If there is photon to arrive among the detector MSM 200 in the depletion layer; Photon is absorbed the generation electron hole pair, and double in depletion layer and produce more electronics and hole in electronics and hole, anti-inclined to one side schottky junction generation snowslide; Thereby photon signal is converted into the signal of telecommunication and is exaggerated; This process can be regarded the capacitance discharges process as, and at this moment operating voltage has very a part of voltage distribution to film resistor 203, thereby the voltage on the schottky junction reduces; Snowslide is extinguished, and film resistor 203 has degenerative effect.In case the voltage among the MSM 200 on the anti-schottky junction partially reduces, avalanche process is extinguished, and at this moment schottky junction charges again, and voltage increases, thereby can survey next light signal.
The complicacy because p-n junction structure or p-i-n structure ultraviolet light snowslide plumber plant; Need growing n-type semiconductor and p N-type semiconductor N; And GaN and AlGaN sill are difficult to the control defect concentration; In p-n and p-i-n structure ultraviolet light snowslide pipe, need between electrode and the semiconductor to form ohmic contact, and this also is a processing step extremely rambunctious in the technology simultaneously.
And based on only needing the growing n-type semiconductor among the built-in negative feedback ultraviolet light single-photon detector MSM 200 of metal-semiconductor-metal; What form between electrode and the semiconductor simultaneously is Schottky contacts; So electrode process is required simple; With low cost, and the MSM structure capacitive is little, so MSM 200 ultraviolet light single-photon detector reaction speeds are very fast.And in MSM 200 ultraviolet light single-photon detectors; Because built-in film resistor 203 is so after MSM 200 detected a light signal, the avalanche current of its initiation can be extinguished by film resistor; Thereby can survey next light signal; MSM 200 single-photon detectors have built-in degenerative function, do not need blanking circuit auxiliary of external complex, thereby have reduced the design cost of whole M SM 200 single-photon detector systems.
Said MSM 200 ultraviolet light single-photon detectors are operated under the Reform Mode (Geiger Mode), and its operating voltage is between the 10V-200V.
In the said MSM 200 ultraviolet light single-photon detectors, the n N-type semiconductor N is by III-V family material, and II-VI family material or IV-IV family material make.
Among the said MSM 200 ultraviolet light single-photon detector preparation technologies, n N-type semiconductor N and film resistor can be used the MOCVD prepared.
Beneficial effect of the present invention is: built-in negative feedback metal-semiconductor-metal ultraviolet light single-photon detector according to the invention has overcome the technology controlling and process difficulty that the complicated technological process of p-n and p-i-n structure ultraviolet light single-photon detector brings, the problem that cost is expensive.Built-in negative feedback metal-semiconductor-metal ultraviolet light single-photon detector according to the invention has overcome the difficulty of the external complicated blanking circuits of traditional M SM structure detector needs, has simplified system design, has reduced design cost.
Description of drawings
Figure 1A is the profile of typical metal-semiconductor-metal ultraviolet light detector;
Figure 1B is the front electrode structure chart of typical metal-semiconductor-metal ultraviolet light detector;
Fig. 1 C is typical metal-semiconductor-metal ultraviolet light detector equivalent circuit diagram;
Fig. 2 A is that built-in negative feedback metal-semiconductor-metal ultraviolet light single-photon detector prepares substrate sketch map in the process;
Fig. 2 B is that built-in negative feedback metal-semiconductor-metal ultraviolet light single-photon detector prepares deposit n N-type semiconductor N sketch map in the process;
Fig. 2 C is that built-in negative feedback metal-semiconductor-metal ultraviolet light single-photon detector prepares deposition film resistance sketch map in the process;
Fig. 2 D is that built-in negative feedback metal-semiconductor-metal ultraviolet light single-photon detector prepares etched film resistance sketch map in the process;
Fig. 2 E is that built-in negative feedback metal-semiconductor-metal ultraviolet light single-photon detector prepares deposit formation electrode sketch map and detector profile in the process;
Fig. 2 F is built-in negative feedback metal-semiconductor-metal ultraviolet light single-photon detector front film resistor and electrode structural chart;
Fig. 2 G is built-in negative feedback metal-semiconductor-metal ultraviolet light single-photon detector equivalent circuit diagram.
Specific embodiments
Be depicted as built-in negative feedback metal-semiconductor-metal ultraviolet light single-photon detector sectional structure chart according to the invention like Fig. 2 E; We can form substrate 201 down to going up down; Substrate 201 can be materials such as SiC, sapphire and silicon, also can be materials such as GaN base or AlGaN base; N N-type semiconductor N 202, material can be materials such as GaN, AlGaN and SiC, and resilient coating is wherein also arranged, and be adaptive to reduce lattice, reduces dislocation density, can use the MOCVD epitaxial growth; Film resistor 203, film resistor can adopt SiC, Si
xO
yOr unadulterated GaN, materials such as AlGaN, its resistance value is about tens K Ω to 1M Ω, can adopt the method epitaxial growth of MOCVD; Cathode electrode 204 and anode electrode 205, cathode electrode 204 forms schottky junction with the n N-type semiconductor N, and electrode can adopt transparent or semitransparent material.
Built-in negative feedback metal-semiconductor-metal ultraviolet light single-photon detector according to the invention is based on the metal-semiconductor-metal panel detector structure; It is simple to have technology; Advantage such as with low cost; If process 400 μ m * 400 μ m size negative feedback metal-semiconductor-metal ultraviolet light single-photon detectors, its concrete processing step is:
Can the deposit resilient coating on substrate 201, adaptive to reduce lattice, reduce defect concentration, can be materials such as SiC, sapphire and silicon on the substrate 201, also can be materials such as GaN base or AlGaN base, shown in Fig. 2 A;
Deposit n N-type semiconductor N 202 on substrate 201 can be GaN, and the AlGaN sill also can be the SiC material, and its thickness is 1-10 μ m, can adopt MOCVD method growing n-type semiconductor, shown in Fig. 2 B; Resilient coating is at GaN, the AlGaN sill at the identical layer material of low-temperature epitaxy (referring to the applicant's patent application.)
203 one-tenth interdigitated configuration of etched film resistance, its each interdigital width is 10 μ m, spacing is 30 μ m, shown in Fig. 2 D;
Can adopt the mode of the PECVD electrode of growing; Cathode electrode 204 is in the middle of the interdigitated film resistor 203, and cathode electrode 204 width are 10 μ m, and cathode electrode and n N-type semiconductor N form Schottky contacts; Anode electrode 205 is grown on the film resistor 203; Electrode width is 10 μ m, and shown in Fig. 2 E, its interdigited electrode and film resistor are shown in Fig. 2 F.
Built-in negative feedback metal-semiconductor-metal ultraviolet light single-photon detector MSM 200 according to the invention is operated under the Geiger mode angular position digitizer (Geiger Mode); Promptly add back bias voltage; And institute's making alive surpasses the puncture voltage of detector, and its size is about 10V-20V, when unglazed; Avalanche breakdown can not take place in detector MSM 200, and it is very little at this moment on electrode, to record electric current; As the light time; Avalanche breakdown takes place in detector MSM 200; On electrode, detect a big electric current, this electric current is exactly the signal of telecommunication, and built-in film resistor can make snowslide extinguish simultaneously; Thereby detector MSM 200 can continue to survey light signal, and embodiment is responsive to the ultraviolet light of 0.2-0.3 micron wave length.It is conventional method that ultraviolet light single-photon detector forming array of the present invention uses.
Claims (8)
1. a built-in negative feedback metal-semiconductor-metal ultraviolet light single-photon detector is characterized in that each detector comprises substrate from bottom to up, can grown buffer layer on the substrate; It on substrate or the resilient coating n N-type semiconductor N; Be the interdigitated film resistor above the n N-type semiconductor N, anode electrode is deposited on and forms anode electrode on the film resistor, and the superiors are interdigited electrodes; Cathode electrode and n N-type semiconductor N form schottky junction, and anode electrode is deposited on the film resistor.
2. built-in negative feedback metal-semiconductor-metal ultraviolet light single-photon detector as claimed in claim 1 is characterized in that etched film resistance (203) becomes interdigitated configuration, and its each interdigital width is 10 μ m, and spacing is 30 μ m; Cathode electrode is in the middle of the interdigitated film resistor 203, and the cathode electrode width is 10 μ m, and cathode electrode and n N-type semiconductor N form Schottky contacts, and anode electrode 205 is grown on the film resistor, and electrode width is 10 μ m.
3. according to claim 1 or claim 2 the substrate of built-in negative feedback metal-semiconductor-metal ultraviolet light single-photon detector is selected SiC for use, GaN, materials such as sapphire or silicon.
4. according to claim 1 or claim 2 the n N-type semiconductor N of built-in negative feedback metal-semiconductor-metal ultraviolet light single-photon detector can be materials such as SiC, GaN, AlGaN base.
5. according to claim 1 or claim 2 built-in negative feedback metal-semiconductor-metal ultraviolet light single-photon detector is operated under the back bias voltage, surpasses the puncture voltage of detector, and voltage swing is 10V-20V.
6. be applicable to the detection of wave bands such as visible light, infrared light like the described built-in negative feedback metal-semiconductor-metal ultraviolet light single-photon detector of one of claim 1 to 4 mechanism, its n N-type semiconductor N can be other III-V families or II-VI family materials such as InGaAs.
7. the preparation process of built-in negative feedback metal-semiconductor-metal ultraviolet light single-photon detector according to claim 1 is:
(1) deposit resilient coating on substrate reduces lattice mismatch, reduces defect concentration;
(2) deposit n N-type semiconductor N on substrate;
(3) deposition film resistance and be etched into interdigitated on the n N-type semiconductor N;
(4) deposit interdigited electrode, cathode electrode and n N-type semiconductor N form schottky junction, and the anode electrode electrode is on film resistor.
8. the preparation process of built-in negative feedback metal-semiconductor-metal ultraviolet light single-photon detector according to claim 1 is: deposition film resistance 203 on n N-type semiconductor N 202 is SiC, Si
xO
yOr unadulterated GaN, the AlGaN material, its resistance value is about tens K Ω to 1M Ω.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102820367A (en) * | 2012-09-11 | 2012-12-12 | 中山大学 | Gallium nitride (GaN) base avalanche photodetector based on heterostructure absorption and multiplication layer separation |
| CN107546283A (en) * | 2017-08-29 | 2018-01-05 | 重庆大学 | The GaN ultraviolet photoelectric detections sensor and its application circuit module of buried type electrode |
| CN108461571A (en) * | 2018-03-26 | 2018-08-28 | 厦门芯荣光电科技有限公司 | 8 × 8 two-dimensional array SiC UV photodetectors and preparation method thereof |
| CN108574022A (en) * | 2017-03-14 | 2018-09-25 | 孙月静 | A kind of aluminum gallium nitride base solar blind ultraviolet detector and preparation method thereof |
| CN113380906A (en) * | 2021-05-26 | 2021-09-10 | 浙江大学 | Transparent ultraviolet photoelectric detector based on metal-semiconductor-metal structure |
| CN114566490A (en) * | 2022-04-15 | 2022-05-31 | 中国电子科技集团公司第十研究所 | MSM capacitor structure with vertical layout and manufacturing method thereof |
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| US20030057507A1 (en) * | 2001-09-26 | 2003-03-27 | International Business Machines Corporation | CMOS-compatible metal-semiconductor-metal photodetector |
| WO2004061979A1 (en) * | 2002-12-13 | 2004-07-22 | Thales | Photoelectric detector with coplanar geometry |
| US20080283953A1 (en) * | 2007-05-17 | 2008-11-20 | Princeton Lightwave, Inc. | Negative Feedback Avalanche Diode |
| CN101868862A (en) * | 2007-11-21 | 2010-10-20 | 日本轻金属株式会社 | Photodetector for ultraviolet and method for manufacturing the photodetector |
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2011
- 2011-11-28 CN CN201110382697XA patent/CN102496648A/en active Pending
Patent Citations (4)
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| US20030057507A1 (en) * | 2001-09-26 | 2003-03-27 | International Business Machines Corporation | CMOS-compatible metal-semiconductor-metal photodetector |
| WO2004061979A1 (en) * | 2002-12-13 | 2004-07-22 | Thales | Photoelectric detector with coplanar geometry |
| US20080283953A1 (en) * | 2007-05-17 | 2008-11-20 | Princeton Lightwave, Inc. | Negative Feedback Avalanche Diode |
| CN101868862A (en) * | 2007-11-21 | 2010-10-20 | 日本轻金属株式会社 | Photodetector for ultraviolet and method for manufacturing the photodetector |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102820367A (en) * | 2012-09-11 | 2012-12-12 | 中山大学 | Gallium nitride (GaN) base avalanche photodetector based on heterostructure absorption and multiplication layer separation |
| CN108574022A (en) * | 2017-03-14 | 2018-09-25 | 孙月静 | A kind of aluminum gallium nitride base solar blind ultraviolet detector and preparation method thereof |
| CN107546283A (en) * | 2017-08-29 | 2018-01-05 | 重庆大学 | The GaN ultraviolet photoelectric detections sensor and its application circuit module of buried type electrode |
| CN108461571A (en) * | 2018-03-26 | 2018-08-28 | 厦门芯荣光电科技有限公司 | 8 × 8 two-dimensional array SiC UV photodetectors and preparation method thereof |
| CN113380906A (en) * | 2021-05-26 | 2021-09-10 | 浙江大学 | Transparent ultraviolet photoelectric detector based on metal-semiconductor-metal structure |
| CN114566490A (en) * | 2022-04-15 | 2022-05-31 | 中国电子科技集团公司第十研究所 | MSM capacitor structure with vertical layout and manufacturing method thereof |
| CN114566490B (en) * | 2022-04-15 | 2023-06-27 | 中国电子科技集团公司第十研究所 | Vertical layout MSM capacitor structure and manufacturing method thereof |
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Application publication date: 20120613 |