CN106531824A - Heterojunction type photoelectric detector and manufacturing method thereof - Google Patents
Heterojunction type photoelectric detector and manufacturing method thereof Download PDFInfo
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- CN106531824A CN106531824A CN201611056818.0A CN201611056818A CN106531824A CN 106531824 A CN106531824 A CN 106531824A CN 201611056818 A CN201611056818 A CN 201611056818A CN 106531824 A CN106531824 A CN 106531824A
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- 238000004519 manufacturing process Methods 0.000 title abstract description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 83
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 79
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 79
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 67
- 229910052772 Samarium Inorganic materials 0.000 claims description 83
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 claims description 83
- 239000002070 nanowire Substances 0.000 claims description 80
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 63
- 235000012239 silicon dioxide Nutrition 0.000 claims description 32
- 239000000377 silicon dioxide Substances 0.000 claims description 30
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 29
- 229910052737 gold Inorganic materials 0.000 claims description 29
- 239000010931 gold Substances 0.000 claims description 29
- 230000004888 barrier function Effects 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- 239000011248 coating agent Substances 0.000 claims description 13
- 238000000576 coating method Methods 0.000 claims description 13
- 238000005516 engineering process Methods 0.000 claims description 13
- 238000010894 electron beam technology Methods 0.000 claims description 10
- 238000002360 preparation method Methods 0.000 claims description 10
- 229910002804 graphite Inorganic materials 0.000 claims description 9
- 239000010439 graphite Substances 0.000 claims description 9
- -1 graphite Alkene Chemical class 0.000 claims description 8
- 238000001459 lithography Methods 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 239000006185 dispersion Substances 0.000 claims description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 150000001336 alkenes Chemical class 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 230000008859 change Effects 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 3
- 240000007594 Oryza sativa Species 0.000 claims 1
- 235000007164 Oryza sativa Nutrition 0.000 claims 1
- 238000002955 isolation Methods 0.000 claims 1
- 239000012528 membrane Substances 0.000 claims 1
- 235000012149 noodles Nutrition 0.000 claims 1
- 235000009566 rice Nutrition 0.000 claims 1
- 230000004044 response Effects 0.000 abstract description 6
- 230000010354 integration Effects 0.000 abstract 1
- 239000002086 nanomaterial Substances 0.000 abstract 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000007792 gaseous phase Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000004043 responsiveness Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000002194 synthesizing effect Effects 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000005375 photometry Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000011664 signaling Effects 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03044—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds comprising a nitride compounds, e.g. GaN
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Abstract
The invention discloses a heterojunction type photoelectric detector and a manufacturing method thereof. The heterojunction type photoelectric detector is composed of p-type samarium-doped gallium nitride nano lines and n-type graphene. The heterojunction type photoelectric detector is advantaged in that the heterojunction type photoelectric detector is quite sensitive to visible light, responsivity and gain are relatively high, a response speed is relatively fast, and excellent bases are provided for application and integration of nano materials in photoelectric devices.
Description
Technical field
The present invention relates to the heterojunction type photoelectric detector and its system of a kind of samarium doping gallium nitride nano-wire and N-type Graphene
Preparation Method.
Background technology
Photodetector refers to a kind of physical phenomenon for being caused illuminated material electric conductivity change by radiation.Photodetector
There is extensive use in the every field of military and national economy.It is mainly used in radionetric survey and spy in visible ray or near infrared band
Survey, industry automatic control, Photometric Measurement etc.；It is mainly used in the side such as missile guidance, infrared thermal imaging, infrared remote sensing in infrared band
Face.
Photodetector can be converted to the signal of telecommunication optical signal.According to mode different in other words device of the device to rdaiation response
The mechanism of part work is different, and photodetector can be divided into two big class：One class is photon detector；Another kind of is thermal detector.Root
Photoconduction type and junction type (hetero-junctions) photodetector can be divided into according to device architecture.Photoconduction is as photon is in quasiconductor
It is middle when being absorbed, produce caused by moveable carrier.Nano semiconductor photodetector is all based on light mostly at present
Conductivity type structure, due to the performances such as the restriction of interelectrode carrier transport time, its speed, response time it is all poor.Photoelectricity
The response speed of detector determines its ability for following optical signalling rapid translating, in light wave communication and optical communication has pole
Its important effect.Slower response speed is seriously limited application of the photodetector in photoelectric device integrated circuit.
The content of the invention
The present invention is intended to provide a kind of heterojunction type photoelectric detector and preparation method thereof, technical problem to be solved is
The stability of the response speed and performance of photodetector is improved, and simplifies preparation method as far as possible and be adapted to industrialized production.
The hetero-junctions of heterojunction type photoelectric detector of the present invention is by P samarium dopings gallium nitride nano-wire and N-type Graphene structure
Into.
The present invention solves technical problem and adopts the following technical scheme that：
Heterojunction type photoelectric detector of the present invention has following structure：
Silicon dioxide layer 2 is covered with the surface of silicon base 1, has the samarium doping of tiling in the Dispersion on surface of silicon dioxide layer 2
Gallium nitride nano-wire 4, is respectively arranged with Ohmic electrode 3 as exporting a pole at the two ends of the samarium doping gallium nitride nano-wire 4,
The Ohmic electrode 3 is in Ohmic contact with the samarium doping gallium nitride nano-wire 4；On the samarium doping gallium nitride nano-wire 4
Overlapping to be covered with Graphene 5, the Graphene 5 is located between two Ohmic electrodes 3 and is isolated with Ohmic electrode 3；In the graphite
Ohmic electrode 6 is provided with alkene 5 as another output stage, the Ohmic electrode 6 is in Ohmic contact and and samarium with the Graphene 5
Doped gallium nitride nano wire 4 and Ohmic electrode 3 are isolated；
The samarium doping gallium nitride nano-wire 4 is p-type samarium doping gallium nitride nano-wire；The Graphene 5 is N-type graphite
Alkene；
The Ohmic electrode 3 and Ohmic electrode 6 are gold electrode.
The preparation method of heterojunction type photoelectric detector of the present invention is as follows：
Samarium doping gallium nitride nano-wire 4 is distributed in the silicon dioxide layer 2 on 1 surface of silicon base, subsequently using ultraviolet light
Lithography makes a pair of electrodes pattern in silicon dioxide layer 2 by lithography, then obtains a pair of Europe using electron beam coating technique evaporation
Nurse electrode 3, the Ohmic electrode 3 are in Ohmic contact with the samarium doping gallium nitride nano-wire 4；Graphene 5 is overlying on into titanium dioxide
The surface of silicon layer 2, using ultraviolet photolithographic technology make by lithography in silicon dioxide layer 2 it is overlapping with samarium doping gallium nitride nano-wire 4 and
The electrode pattern isolated between two Ohmic electrodes 3 and with Ohmic electrode 3, then removes electrode using oxygen plasma bombardment
Graphene beyond pattern obtains Graphene 5, recycles ultraviolet photolithographic technology and electron beam coating technique to prepare ohm electricity
Pole 6, the Ohmic electrode 6 are formed Ohmic contact with Graphene 5 and are isolated with samarium doping gallium nitride nano-wire 4 and Ohmic electrode 3.
Heterojunction type photoelectric detector of the present invention has following structure：
Silicon dioxide layer 8 is covered with the surface of silicon base 7, has Graphene 9 in the surface tiling of silicon dioxide layer 8, in stone
Insulating barrier 10 is provided with black alkene 9, has samarium doping gallium nitride nano-wire 11 and the samarium in the Dispersion on surface of the insulating barrier 10
A part for doped gallium nitride nano wire 11 is contacted with Graphene 9；Ohmic electrode 12, described ohm are provided with insulating barrier 10
Electrode 12 is in Ohmic contact with samarium doping gallium nitride nano-wire 11；Ohmic electrode 13, ohm electricity are provided with Graphene 9
Pole 13 is isolated with insulating barrier 10, Ohmic electrode 12 and samarium doping gallium nitride nano-wire 11；
The samarium doping gallium nitride nano-wire 11 is p-type samarium doping gallium nitride nano-wire；The Graphene 9 is N-type graphite
Alkene；
The Ohmic electrode 3 and Ohmic electrode 6 are gold electrode.
The preparation method of heterojunction type photoelectric detector of the present invention is as follows：
Graphene 9 is tiled in the silicon dioxide layer 8 on 7 surface of silicon base, using ultraviolet photolithographic and magnetron sputtering plating
Technology prepares insulating barrier 10 on the surface of Graphene 9, and samarium doping gallium nitride nano-wire 11 is distributed to the edge on insulating barrier 10
Position makes the samarium doping gallium nitride nano-wire 11 have part and 9 overlapping contact of Graphene, using ultraviolet photolithographic technology and electronics
Beam coating technique prepares Ohmic electrode 12, the Ohmic electrode 12 and the samarium doping gallium nitride nano-wire 11 on insulating barrier 10
In Ohmic contact；Reuse ultraviolet photolithographic technology and electron beam coating technique prepares Ohmic electrode 13 on Graphene 9, it is described
Ohmic electrode 13 is isolated with insulating barrier 10, Ohmic electrode 12 and samarium doping gallium nitride nano-wire 11.
The insulating barrier 10 is selected from silicon nitride (Si3N4), oxidation breathe out (HfO2), zirconium oxide (ZrO2), aluminium oxide (Al2O3) or
Silicon dioxide (SiO2), the thickness of insulating barrier 10 is 10 nanometers to 10 microns.
The thickness of gold electrode of the present invention is 100nm.
The p-type samarium doping gallium nitride nano-wire 4 and N-type Graphene 5 that the present invention is used is using chemistry according to prior art
CVD method synthesizes in horizontal tube quartz stove.
Compared with the prior art, the present invention has the beneficial effect that：
The present invention relates to a kind of technique is relatively simple, method with low cost is prepared for p-type titanium oxide and N-type graphite
Alkene heterojunction type photoelectric detector.Due to interface acceleration in electric field in which, hetero-junctions junction type photodetector detection speed
Degree is substantially better than photoconduction type detector.Additionally, the features such as Graphene has flexible, transparent and high conductivity, makes detector
Possess the preferable ability for receiving detected light, therefore possess higher responsiveness and gain.So, using samarium doping nitrogen
Change gallium nano wire and Graphene is built into heterojunction type photoelectric detector and possesses higher detectivity, higher responsiveness, increases
Benefit and faster speed of detection, are conducive to application of the photodetector in Quick photoelectric integrated circuit.
Description of the drawings
Fig. 1 is that p-type samarium doping gallium nitride nano-wire of the present invention is shown with the structure of N-type Graphene heterojunction type photoelectric detector
It is intended to.
Label in figure：1 is silicon base；2 is silicon dioxide layer；3 is Ohmic electrode；4 is samarium doping gallium nitride nano-wire；5
For Graphene；6 is Ohmic electrode.
Fig. 2 is that p-type samarium doping gallium nitride nano-wire of the present invention is shown with the structure of N-type Graphene heterojunction type photoelectric detector
It is intended to.
Label in figure：7 is silicon base；8 is silicon dioxide layer；9 is Graphene；10 is insulating barrier；11 nitrogenize for samarium doping
Gallium nano wire；12 is Ohmic electrode；13 is Ohmic electrode.
Specific embodiment
Embodiment 1：
The present embodiment p-type samarium doping gallium nitride nano-wire has following knot with N-type Graphene heterojunction type photoelectric detector
Structure：
Referring to Fig. 1, there is the samarium doping gallium nitride nanometer of tiling in the Dispersion on surface of the silicon base 1 for being covered with silicon dioxide layer 2
Line 4, is respectively arranged with the gold electrode 3 of 100 nanometer thickness as exporting a pole at the two ends of the samarium doping gallium nitride nano-wire 4,
The gold electrode 3 is in Ohmic contact with the samarium doping gallium nitride nano-wire 4；Submit in the samarium doping gallium nitride nano-wire 4
Superimposition has Graphene 5, and the Graphene 5 is located between two gold electrodes 3 and is isolated with gold electrode 3；Set on the Graphene 5
The gold electrode 6 of 100 nanometer thickness is equipped with as another output stage, the gold electrode 6 is in Ohmic contact and and samarium with the Graphene 5
Doped gallium nitride nano wire 4 and gold electrode 3 are isolated；
Wherein samarium doping gallium nitride nano-wire 4 is p-type samarium doping gallium nitride nano-wire；The Graphene 5 is N-type graphite
Alkene.
In the present embodiment, the preparation method of p-type samarium doping gallium nitride nano-wire and N-type Graphene junction type photodetector is such as
Under：
First, using chemical gaseous phase depositing process horizontal tube quartz stove in 4 He of synthesizing samarium doped gallium nitride nano-wire
Graphene 5, samarium doping gallium nitride nano-wire 4 is distributed to the surface of the silicon base 1 for being covered with silicon dioxide layer 2, silicon dioxide layer 2
Thickness be 300 nanometers, a pair of electrodes pattern, Ran Houli are made by lithography in silicon dioxide layer 2 using ultraviolet photolithographic technology subsequently
The gold electrode 3 of a pair 100 nanometer thickness, the gold electrode 3 and the samarium doping gallium nitride are obtained with electron beam coating technique evaporation
Nano wire 4 is in Ohmic contact；Graphene 5 is overlying on into the surface of silicon dioxide layer 2, using ultraviolet photolithographic technology in silicon dioxide layer
Make electrode that is overlapping with samarium doping gallium nitride nano-wire 4 and isolating between two gold electrodes 3 and with gold electrode 3 on 2 by lithography
Pattern, then obtains Graphene 5 using the Graphene beyond oxygen plasma bombardment removing electrode pattern, recycles ultraviolet photolithographic skill
Art and electron beam coating technique prepare the gold electrode 6 of 100 nanometer thickness, and the gold electrode 6 forms Ohmic contact with Graphene 5
And isolate with samarium doping gallium nitride nano-wire 4 and gold electrode 3, form heterogeneous with Graphene 5 by samarium doping gallium nitride nano-wire 4
Knot.
Embodiment 2：
As shown in Fig. 2 the present embodiment p-type samarium doping gallium nitride nano-wire and N-type Graphene heterojunction type photoelectric detector
With following structure：
There is Graphene 9 in the surface tiling of the silicon base 7 for being covered with silicon dioxide layer 8,30 nanometers are provided with Graphene 9
Thick insulating barrier 10, has samarium doping gallium nitride nano-wire 11 and the samarium doping gallium nitride in the Dispersion on surface of the insulating barrier 10
A part for nano wire 11 is contacted with Graphene 9；The gold electrode 12 of 100 nanometer thickness, the gold electricity are provided with insulating barrier 10
Pole 12 is in Ohmic contact with samarium doping gallium nitride nano-wire 11；The gold electrode 13 of 100 nanometer thickness, institute are provided with Graphene 9
State gold electrode 13 to isolate with insulating barrier 10, gold electrode 12 and samarium doping gallium nitride nano-wire 11；
The samarium doping gallium nitride nano-wire 11 is p-type samarium doping gallium nitride nano-wire；The Graphene 9 is N-type graphite
Alkene.
Insulating barrier 10 described in the present embodiment is silicon nitride.
In the present embodiment, the preparation method of p-type samarium doping gallium nitride nano-wire and N-type Graphene junction type photodetector is such as
Under：
First, using chemical gaseous phase depositing process horizontal tube quartz stove in 11 He of synthesizing samarium doped gallium nitride nano-wire
Graphene 9, the surface of the silicon base 7 for being covered with silicon dioxide layer 8 that Graphene 9 is tiled, using ultraviolet photolithographic and magnetron sputtering
Coating technique prepares the insulating barrier 10 of 30 nanometer thickness on the surface of Graphene 9, and samarium doping gallium nitride nano-wire 11 is distributed to absolutely
Marginal position in edge layer 10 makes the samarium doping gallium nitride nano-wire 11 have part and 9 overlapping contact of Graphene, using ultraviolet
Photoetching technique and electron beam coating technique prepare the gold electrode 12 of 100 nanometer thickness, the gold electrode 12 and institute on insulating barrier 10
Samarium doping gallium nitride nano-wire 11 is stated in Ohmic contact；Ultraviolet photolithographic technology and electron beam coating technique are reused in Graphene
The gold electrode 13 of 100 nanometer thickness, the gold electrode 13 and insulating barrier 10, gold electrode 12 and samarium doping gallium nitride nanometer are prepared on 9
Line 11 is isolated.
Claims (5)
1. a kind of heterojunction type photoelectric detector based on samarium doping gallium nitride nano-wire, is characterized in that with following structure：
Silicon dioxide layer (2) is covered with the surface of silicon base (1), the samarium for having tiling in the Dispersion on surface of silicon dioxide layer (2) is mixed
Miscellaneous gallium nitride nano-wire (4), is respectively arranged with Ohmic electrode (3) conduct at the two ends of the samarium doping gallium nitride nano-wire (4)
A pole is exported, the Ohmic electrode (3) is with the samarium doping gallium nitride nano-wire (4) in Ohmic contact；In the samarium doping nitrogen
Changing gallium nano wire (4) and submitting superimposition has a Graphene (5), the Graphene (5) between two Ohmic electrodes (3) and with ohm
Electrode (3) is isolated；Ohmic electrode (6) is provided with the Graphene (5) as another output stage, the Ohmic electrode (6)
Isolate in Ohmic contact and with samarium doping gallium nitride nano-wire (4) and Ohmic electrode (3) with the Graphene (5)；
The samarium doping gallium nitride nano-wire (4) is p-type samarium doping gallium nitride nano-wire；The Graphene (5) is N-type graphite
Alkene；
The Ohmic electrode (3) and Ohmic electrode (6) are gold electrode.
2. the preparation side of the heterojunction type photoelectric detector based on samarium doping gallium nitride nano-wire described in a kind of claim 1
Method, it is characterised in that prepare as follows：
Samarium doping gallium nitride nano-wire (4) is distributed in the silicon dioxide layer (2) on silicon base (1) surface, subsequently using ultraviolet
Photoetching technique makes a pair of electrodes pattern by lithography in silicon dioxide layer (2), then obtains one using electron beam coating technique evaporation
To Ohmic electrode (3), the Ohmic electrode (3) is with the samarium doping gallium nitride nano-wire (4) in Ohmic contact；By Graphene
(5) surface of silicon dioxide layer (2) is overlying on, is made by lithography in silicon dioxide layer (2) and samarium doping nitrogen using ultraviolet photolithographic technology
Change the electrode pattern that gallium nano wire (4) is overlapped and isolated between two Ohmic electrodes (3) and with Ohmic electrode (3), then
Graphene (5) is obtained using the Graphene beyond oxygen plasma bombardment removing electrode pattern, ultraviolet photolithographic technology and electricity is recycled
Beamlet coating technique prepares Ohmic electrode (6), and the Ohmic electrode (6) forms Ohmic contact and and samarium with Graphene (5)
Doped gallium nitride nano wire (4) and Ohmic electrode (3) isolation.
3. a kind of heterojunction type photoelectric detector based on samarium doping gallium nitride nano-wire, is characterized in that with following structure：
Silicon dioxide layer (8) is covered with the surface of silicon base (7), has Graphene (9) in the surface tiling of silicon dioxide layer (8),
Insulating barrier (10) is provided with Graphene (9), has samarium doping gallium nitride nano-wire in the Dispersion on surface of the insulating barrier (10)
And the part of the samarium doping gallium nitride nano-wire (11) is contacted with Graphene (9) (11)；It is provided with insulating barrier (10)
Ohmic electrode (12), the Ohmic electrode (12) is with samarium doping gallium nitride nano-wire (11) in Ohmic contact；On Graphene (9)
Ohmic electrode (13) is provided with, the Ohmic electrode (13) is received with insulating barrier (10), Ohmic electrode (12) and samarium doping gallium nitride
Rice noodle (11) is isolated；
The samarium doping gallium nitride nano-wire (11) is p-type samarium doping gallium nitride nano-wire；The Graphene (9) is N-type graphite
Alkene；
The Ohmic electrode (3) and Ohmic electrode (6) are gold electrode.
4. the heterojunction type photoelectric detector based on samarium doping gallium nitride nano-wire according to claim 3, its feature exist
In：The insulating barrier (10) is selected from silicon nitride, oxidation Kazakhstan, zirconium oxide, aluminium oxide or silicon dioxide.
5. the preparation of the heterojunction type photoelectric detector based on samarium doping gallium nitride nano-wire described in a kind of claim 3 or 4
Method, it is characterised in that prepare as follows：
Graphene (9) tiling is arrived in the silicon dioxide layer (8) on silicon base (7) surface, using ultraviolet photolithographic and magnetron sputtering
Membrane technology prepares insulating barrier (10) on the surface of Graphene (9), and samarium doping gallium nitride nano-wire (11) is distributed to insulating barrier
(10) marginal position on makes the samarium doping gallium nitride nano-wire (11) have part and Graphene (9) overlapping contact, using purple
Outer photoetching technique and electron beam coating technique prepare Ohmic electrode (12), the Ohmic electrode (12) and institute on insulating barrier (10)
Samarium doping gallium nitride nano-wire (11) is stated in Ohmic contact；Ultraviolet photolithographic technology and electron beam coating technique are reused in graphite
Ohmic electrode (13), the Ohmic electrode (13) and the nitridation of insulating barrier (10), Ohmic electrode (12) and samarium doping are prepared on alkene (9)
Gallium nano wire (11) is isolated.
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