CN106744645A - A kind of gas sensor and preparation method thereof - Google Patents
A kind of gas sensor and preparation method thereof Download PDFInfo
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- CN106744645A CN106744645A CN201611081275.8A CN201611081275A CN106744645A CN 106744645 A CN106744645 A CN 106744645A CN 201611081275 A CN201611081275 A CN 201611081275A CN 106744645 A CN106744645 A CN 106744645A
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Abstract
It is the hetero-junctions gas sensor being built into by p-type La doped tin oxide nano band and N-shaped Graphene the invention discloses a kind of heterojunction type gas sensor and preparation method thereof.Gas sensor of the present invention is very sensitive to oxygen, responsiveness and gain is higher and response speed very fast, is application of the nano material in gas sensor and integrated there is provided good basis.
Description
Technical field
The present invention relates to a kind of p-type La doped tin oxide nano band and N-type Graphene heterojunction type gas sensor and
Its preparation method.
Background technology
Nano material has the features such as specific surface area is big, electrical properties are sensitive to adsorption, and nanometer technology is applied to
Sensory field, is expected to the senser element for preparing fast response time, sensitivity is high, selectivity is good.Metal oxide semiconductor, especially
It is tin oxide base nano material, of great interest due to its superior optics, electricity and gas sensing characteristicses.Grind
Study carefully and show, doping can further improve the gas sensing performance of tin oxide base nano material.Although tin oxide base gas sensing
Device has been achieved for certain achievement, but its sensitivity and selectivity still need to further raising.Reduce size and the increasing of particle
Plus the specific surface area of material is to improve the key point of sensitivity and selectivity.
2004, the Geim and Novosolevo of Univ Manchester UK prepared monatomic lamella, with cellular
The Graphene of lattice structure.Due to its typical two-dimensional structure, there is Graphene the specific surface area of superelevation, electrical conductivity surface is inhaled
Attached sensitive the advantages of.Recent studies have found that, Graphene can be applied to prepare gas sensor and to vapor, carbon monoxide,
Ammonia and nitrogen dioxide gas have good response.But, detection of the graphene sensor to some dangerous gas, such as
Methane, not yet finds report so far.
The content of the invention
The present invention is intended to provide a kind of heterojunction type gas sensor and preparation method thereof, technical problem to be solved is
The response speed of gas sensor and the stability of performance are improved, and simplifies preparation method as far as possible and be adapted to industrialized production.
The hetero-junctions of heterojunction type gas sensor of the present invention is by p-type La doped tin oxide nano band and N-type Graphene
Constitute.
The present invention solves technical problem and adopts the following technical scheme that：
Heterojunction type gas sensor of the present invention has following structure：
Silicon dioxide layer 2 is covered with the surface of silicon base 1, has the La doped of tiling in the Dispersion on surface of silicon dioxide layer 2
Tin oxide nano band 4, Ohmic electrode 3 is respectively arranged with as exporting a pole in the La doped tin oxide nano with 4 two ends,
The Ohmic electrode 3 is in Ohmic contact with La doped tin oxide nano band 4；On La doped tin oxide nano band 4
Overlapping to be covered with Graphene 5, the Graphene 5 is located between two Ohmic electrodes 3 and isolates with Ohmic electrode 3；In the graphite
Ohmic electrode 6 is provided with alkene 5 as another output stage, the Ohmic electrode 6 is in Ohmic contact and and lanthanum with the Graphene 5
Doped tin oxide nano band 4 and Ohmic electrode 3 are isolated；
The La doped tin oxide nano band 4 is p-type La doped tin oxide nano band；The Graphene 5 is N-type graphite
Alkene；
The Ohmic electrode 3 and Ohmic electrode 6 are gold electrode.
The preparation method of heterojunction type gas sensor of the present invention is as follows：
La doped tin oxide nano is distributed in the silicon dioxide layer 2 on the surface of silicon base 1 with 4, then using ultraviolet light
Lithography makes a pair of electrodes pattern by lithography in silicon dioxide layer 2, then obtains a pair of Europe using electron beam coating technique evaporation
Nurse electrode 3, the Ohmic electrode 3 is in Ohmic contact with La doped tin oxide nano band 4；Graphene 5 is overlying on titanium dioxide
The surface of silicon layer 2, using ultraviolet photolithographic technology made by lithography in silicon dioxide layer 2 it is overlapping with La doped tin oxide nano band 4 and
The electrode pattern isolated between two Ohmic electrodes 3 and with Ohmic electrode 3, then removes electrode using oxygen plasma bombardment
Graphene beyond pattern obtains Graphene 5, recycles ultraviolet photolithographic technology and electron beam coating technique to prepare ohm electricity
Pole 6, the Ohmic electrode 6 forms Ohmic contact and isolates with La doped tin oxide nano band 4 and Ohmic electrode 3 with Graphene 5.
Heterojunction type gas sensor of the present invention has following structure：
Silicon dioxide layer 8 is covered with the surface of silicon base 7, has Graphene 9 in the surface tiling of silicon dioxide layer 8, in stone
Insulating barrier 10 is provided with black alkene 9, has La doped tin oxide nano band 11 and the lanthanum in the Dispersion on surface of the insulating barrier 10
Doped tin oxide nano is contacted with 11 part with Graphene 9；Ohmic electrode 12, described ohm are provided with insulating barrier 10
Electrode 12 is in Ohmic contact with La doped tin oxide nano band 11；Ohmic electrode 13, ohm electricity are provided with Graphene 9
Pole 13 isolates with insulating barrier 10, Ohmic electrode 12 and La doped tin oxide nano band 11；
The La doped tin oxide nano band 11 is p-type La doped tin oxide nano band；The Graphene 9 is N-type graphite
Alkene；
The Ohmic electrode 3 and Ohmic electrode 6 are gold electrode.
The preparation method of heterojunction type gas sensor of the present invention is as follows：
Graphene 9 is tiled onto the silicon dioxide layer 8 on the surface of silicon base 7, using ultraviolet photolithographic and magnetron sputtering plating
Technology prepares insulating barrier 10 on the surface of Graphene 9, and La doped tin oxide nano is distributed to the edge on insulating barrier 10 with 11
Position makes the La doped tin oxide nano band 11 have part and the overlapping contact of Graphene 9, using ultraviolet photolithographic technology and electronics
Beam coating technique prepares Ohmic electrode 12, the Ohmic electrode 12 and La doped tin oxide nano band 11 on insulating barrier 10
In Ohmic contact；Reuse ultraviolet photolithographic technology and electron beam coating technique prepares Ohmic electrode 13 on Graphene 9, it is described
Ohmic electrode 13 is isolated with insulating barrier 10, Ohmic electrode 12 and La doped tin oxide nano band 11.
The insulating barrier 10 is selected from silicon nitride (Si3N4), oxidation breathe out (HfO2), zirconium oxide (ZrO2), aluminum oxide (Al2O3) or
Silica (SiO2), the thickness of insulating barrier 10 is 10 nanometers to 10 microns.
The thickness of gold electrode of the present invention is 100nm.
The p-type La doped tin oxide nano band 4 and N-type Graphene 5 that the present invention is used are using chemistry according to prior art
CVD method synthesizes in horizontal tube quartz stove.
Compared with the prior art, the present invention has the beneficial effect that：
Relatively simple the present invention relates to a kind of technique, method with low cost is prepared for p-type titanium oxide and N-type graphite
Alkene heterojunction type gas sensor.Due to its interior acceleration in electric field of interface, hetero-junctions junction type gas sensor detection speed
Degree is significantly superior.Additionally, the features such as Graphene has flexible, transparent and high conductivity, possesses detector and preferably connects
The ability of detected gas is received, therefore possesses responsiveness and gain higher.So, using La doped tin oxide nano band and
Graphene is built into heterojunction type gas sensor and possesses detectivity higher, responsiveness higher, gain and faster
Speed of detection, is conducive to application of the gas sensor in fast integration circuit.
Brief description of the drawings
Fig. 1 is that p-type La doped tin oxide nano band of the present invention shows with the structure of N-type Graphene heterojunction type gas sensor
It is intended to.
Label in figure：1 is silicon base；2 is silicon dioxide layer；3 is Ohmic electrode；4 is La doped tin oxide nano band；5
It is Graphene；6 is Ohmic electrode.
Fig. 2 is that p-type La doped tin oxide nano band of the present invention shows with the structure of N-type Graphene heterojunction type gas sensor
It is intended to.
Label in figure：7 is silicon base；8 is silicon dioxide layer；9 is Graphene；10 is insulating barrier；11 aoxidize for La doped
Tin nanobelt；12 is Ohmic electrode；13 is Ohmic electrode.
Specific embodiment
Embodiment 1：
The present embodiment p-type La doped tin oxide nano band has following knot with N-type Graphene heterojunction type gas sensor
Structure：
Referring to Fig. 1, there is the La doped tin oxide nano of tiling in the Dispersion on surface of the silicon base 1 for being covered with silicon dioxide layer 2
Band 4, the gold electrode 3 of 100 nanometer thickness is respectively arranged with as exporting a pole in the La doped tin oxide nano with 4 two ends,
The gold electrode 3 is in Ohmic contact with La doped tin oxide nano band 4；Submitted in La doped tin oxide nano band 4
Superimposition has Graphene 5, and the Graphene 5 is located between two gold electrodes 3 and isolates with gold electrode 3；Set on the Graphene 5
The gold electrode 6 of 100 nanometer thickness is equipped with as another output stage, the gold electrode 6 is in Ohmic contact and and lanthanum with the Graphene 5
Doped tin oxide nano band 4 and gold electrode 3 are isolated；
Wherein La doped La doped tin oxide nano band 4 is p-type La doped La doped tin oxide nano band；The Graphene
5 is N-type Graphene.
The preparation of p-type La doped La doped tin oxide nano band and N-type Graphene junction type gas sensor in the present embodiment
Method is as follows：
First, La doped La doped tin oxide nano is synthesized in horizontal tube quartz stove using chemical gaseous phase depositing process
Band 4 and Graphene 5, La doped tin oxide nano is distributed to the surface of the silicon base 1 for being covered with silicon dioxide layer 2, titanium dioxide with 4
The thickness of silicon layer 2 is 300 nanometers, then makes a pair of electrodes pattern by lithography in silicon dioxide layer 2 using ultraviolet photolithographic technology, so
Afterwards a pair gold electrodes of 100 nanometer thickness 3, the gold electrode 3 and the La doped oxygen are obtained using electron beam coating technique evaporation
It is in Ohmic contact to change tin nanobelt 4；Graphene 5 is overlying on the surface of silicon dioxide layer 2, using ultraviolet photolithographic technology in titanium dioxide
Make what is overlapped with 4 with La doped tin oxide nano and isolated between two gold electrodes 3 and with gold electrode 3 on silicon layer 2 by lithography
Electrode pattern, the Graphene for then being removed beyond electrode pattern using oxygen plasma bombardment obtains Graphene 5, recycles ultraviolet light
Lithography and electron beam coating technique prepare the gold electrode 6 of 100 nanometer thickness, and the gold electrode 6 forms ohm with Graphene 5
Contact and isolate with La doped tin oxide nano band 4 and gold electrode 3, form different with Graphene 5 by La doped tin oxide nano band 4
Matter knot.
Embodiment 2：
As shown in Fig. 2 the present embodiment p-type La doped tin oxide nano band and N-type Graphene heterojunction type gas sensor
With following structure：
Being tiled on the surface for being covered with the silicon base 7 of silicon dioxide layer 8 has Graphene 9, and 30 nanometers are provided with Graphene 9
Thick insulating barrier 10, has La doped tin oxide nano band 11 and the La doped tin oxide in the Dispersion on surface of the insulating barrier 10
A part for nanobelt 11 is contacted with Graphene 9；The gold electrode 12 of 100 nanometer thickness, the gold electricity are provided with insulating barrier 10
Pole 12 is in Ohmic contact with La doped tin oxide nano band 11；The gold electrode 13 of 100 nanometer thickness, institute are provided with Graphene 9
Gold electrode 13 is stated to isolate with insulating barrier 10, gold electrode 12 and La doped tin oxide nano band 11；
The La doped tin oxide nano band 11 is p-type La doped tin oxide nano band；The Graphene 9 is N-type graphite
Alkene.
Insulating barrier 10 described in the present embodiment is silicon nitride.
The preparation method of p-type La doped tin oxide nano band and N-type Graphene junction type gas sensor is such as in the present embodiment
Under：
First, La doped tin oxide nano 11 Hes of band are synthesized in horizontal tube quartz stove using chemical gaseous phase depositing process
Graphene 9, the surface of the silicon base 7 for being covered with silicon dioxide layer 8 that Graphene 9 is tiled, using ultraviolet photolithographic and magnetron sputtering
Coating technique prepares the insulating barrier 10 of 30 nanometer thickness on the surface of Graphene 9, and La doped tin oxide nano band 11 is distributed to absolutely
Marginal position in edge layer 10 makes the La doped tin oxide nano band 11 have part and the overlapping contact of Graphene 9, using ultraviolet
Photoetching technique and electron beam coating technique prepare the gold electrode 12 of 100 nanometer thickness, the gold electrode 12 and institute on insulating barrier 10
La doped tin oxide nano band 11 is stated in Ohmic contact；Ultraviolet photolithographic technology and electron beam coating technique are reused in Graphene
The gold electrode 13 of 100 nanometer thickness, the gold electrode 13 and insulating barrier 10, gold electrode 12 and La doped tin oxide nano are prepared on 9
Band 11 is isolated.
Claims (5)
1. a kind of heterojunction type gas sensor based on La doped tin oxide nano band, it is characterized in that having following structure：
Silicon dioxide layer (2) is covered with the surface of silicon base (1), the lanthanum for having tiling in the Dispersion on surface of silicon dioxide layer (2) is mixed
Miscellaneous tin oxide nano band (4), Ohmic electrode (3) conduct is respectively arranged with the two ends of the La doped tin oxide nano band (4)
A pole is exported, the Ohmic electrode (3) is with the La doped tin oxide nano band (4) in Ohmic contact；In the La doped oxygen
Changing tin nanobelt (4) and submitting superimposition has a Graphene (5), the Graphene (5) between two Ohmic electrodes (3) and with ohm
Electrode (3) is isolated；Ohmic electrode (6) is provided with the Graphene (5) as another output stage, the Ohmic electrode (6)
Isolate in Ohmic contact and with La doped tin oxide nano band (4) and Ohmic electrode (3) with the Graphene (5)；
The La doped tin oxide nano band (4) is p-type La doped tin oxide nano band；The Graphene (5) is N-type graphite
Alkene；
The Ohmic electrode (3) and Ohmic electrode (6) are gold electrode.
2. the preparation side of the heterojunction type gas sensor based on La doped tin oxide nano band described in a kind of claim 1
Method, it is characterised in that prepare as follows：
La doped tin oxide nano band (4) is distributed in the silicon dioxide layer (2) on silicon base (1) surface, then using ultraviolet
Photoetching technique makes a pair of electrodes pattern by lithography in silicon dioxide layer (2), then obtains one using electron beam coating technique evaporation
To Ohmic electrode (3), the Ohmic electrode (3) is with the La doped tin oxide nano band (4) in Ohmic contact；By Graphene
(5) surface of silicon dioxide layer (2) is overlying on, is made by lithography in silicon dioxide layer (2) and La doped oxygen using ultraviolet photolithographic technology
Change the electrode pattern that tin nanobelt (4) is overlapping and isolates between two Ohmic electrodes (3) and with Ohmic electrode (3), then
The Graphene removed beyond electrode pattern using oxygen plasma bombardment obtains Graphene (5), recycles ultraviolet photolithographic technology and electricity
Beamlet coating technique prepares Ohmic electrode (6), and the Ohmic electrode (6) forms Ohmic contact and and lanthanum with Graphene (5)
Doped tin oxide nano band (4) and Ohmic electrode (3) are isolated.
3. a kind of heterojunction type gas sensor based on La doped tin oxide nano band, it is characterized in that having following structure：
Silicon dioxide layer (8) is covered with the surface of silicon base (7), has Graphene (9) in the surface tiling of silicon dioxide layer (8),
Insulating barrier (10) is provided with Graphene (9), has La doped tin oxide nano band in the Dispersion on surface of the insulating barrier (10)
And the part of the La doped tin oxide nano band (11) is contacted with Graphene (9) (11)；It is provided with insulating barrier (10)
Ohmic electrode (12), the Ohmic electrode (12) is with La doped tin oxide nano band (11) in Ohmic contact；On Graphene (9)
It is provided with Ohmic electrode (13), the Ohmic electrode (13) and insulating barrier (10), Ohmic electrode (12) and La doped oxidation sijna
Rice band (11) isolation；
The La doped tin oxide nano band (11) is p-type La doped tin oxide nano band；The Graphene (9) is N-type graphite
Alkene；
The Ohmic electrode (3) and Ohmic electrode (6) are gold electrode.
4. the heterojunction type gas sensor based on La doped tin oxide nano band according to claim 3, its feature exists
In：The insulating barrier (10) is selected from silicon nitride, oxidation Kazakhstan, zirconium oxide, aluminum oxide or silica.
5. the preparation of the heterojunction type gas sensor based on La doped tin oxide nano band described in a kind of claim 3 or 4
Method, it is characterised in that prepare as follows：
Graphene (9) tiling is arrived in the silicon dioxide layer (8) on silicon base (7) surface, using ultraviolet photolithographic and magnetron sputtering
Membrane technology prepares insulating barrier (10) on the surface of Graphene (9), and La doped tin oxide nano band (11) is distributed into insulating barrier
(10) marginal position on makes the La doped tin oxide nano band (11) have part and Graphene (9) overlapping contact, using purple
Outer photoetching technique and electron beam coating technique prepare Ohmic electrode (12), the Ohmic electrode (12) and institute on insulating barrier (10)
La doped tin oxide nano band (11) is stated in Ohmic contact；Ultraviolet photolithographic technology and electron beam coating technique are reused in graphite
Ohmic electrode (13), the Ohmic electrode (13) and the oxidation of insulating barrier (10), Ohmic electrode (12) and La doped are prepared on alkene (9)
Tin nanobelt (11) is isolated.
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Cited By (3)
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| CN109613070A (en) * | 2019-01-02 | 2019-04-12 | 大连理工大学 | One kind being based on two dimension MXene/SnO2Ammonia gas sensor, preparation process and the application of hetero-junctions |
| CN109632906A (en) * | 2019-01-17 | 2019-04-16 | 广西师范大学 | Based on graphene-metal hetero-junction gas sensor array and preparation method thereof |
| CN114047231A (en) * | 2021-11-04 | 2022-02-15 | 湖州师范学院 | Diode type heterojunction gas sensor chip and preparation method thereof |
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| CN106057961A (en) * | 2016-06-28 | 2016-10-26 | 兰建龙 | Titanium-oxide-nanoband-based heterojunction type photovoltaic detector and preparation method thereof |
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| CN102610672A (en) * | 2012-03-23 | 2012-07-25 | 合肥工业大学 | Heterojunction type photoelectric detector and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109613070A (en) * | 2019-01-02 | 2019-04-12 | 大连理工大学 | One kind being based on two dimension MXene/SnO2Ammonia gas sensor, preparation process and the application of hetero-junctions |
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| CN109632906A (en) * | 2019-01-17 | 2019-04-16 | 广西师范大学 | Based on graphene-metal hetero-junction gas sensor array and preparation method thereof |
| CN109632906B (en) * | 2019-01-17 | 2024-01-30 | 广西师范大学 | Gas sensor array based on graphene-metal heterojunction and preparation method thereof |
| CN114047231A (en) * | 2021-11-04 | 2022-02-15 | 湖州师范学院 | Diode type heterojunction gas sensor chip and preparation method thereof |
| CN114047231B (en) * | 2021-11-04 | 2024-02-27 | 湖州师范学院 | Diode type heterojunction gas sensor chip and preparation method thereof |
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