CN108878588A - The preparation method of gallium nitride base photodetector based on graphene insert layer structure - Google Patents
The preparation method of gallium nitride base photodetector based on graphene insert layer structure Download PDFInfo
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 83
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 83
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 55
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 54
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 76
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 39
- 239000010980 sapphire Substances 0.000 claims abstract description 39
- 229910017083 AlN Inorganic materials 0.000 claims abstract description 32
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 27
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000004411 aluminium Substances 0.000 claims abstract description 22
- 230000007704 transition Effects 0.000 claims abstract description 21
- 238000005121 nitriding Methods 0.000 claims abstract description 20
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052802 copper Inorganic materials 0.000 claims abstract description 17
- 239000010949 copper Substances 0.000 claims abstract description 17
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 17
- 238000001459 lithography Methods 0.000 claims abstract description 12
- 238000012546 transfer Methods 0.000 claims abstract description 7
- 238000010438 heat treatment Methods 0.000 claims abstract description 5
- 239000010410 layer Substances 0.000 claims description 49
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 30
- 238000006243 chemical reaction Methods 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 21
- 238000004544 sputter deposition Methods 0.000 claims description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 16
- 229910021529 ammonia Inorganic materials 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 239000001257 hydrogen Substances 0.000 claims description 13
- 229910052739 hydrogen Inorganic materials 0.000 claims description 13
- 239000007789 gas Substances 0.000 claims description 12
- 229920002120 photoresistant polymer Polymers 0.000 claims description 12
- 239000002356 single layer Substances 0.000 claims description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 11
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 10
- 238000005229 chemical vapour deposition Methods 0.000 claims description 10
- 229910052733 gallium Inorganic materials 0.000 claims description 10
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 claims description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 239000005416 organic matter Substances 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 5
- 241001062009 Indigofera Species 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 150000002431 hydrogen Chemical class 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 238000005915 ammonolysis reaction Methods 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 230000008859 change Effects 0.000 claims description 3
- 238000011161 development Methods 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- 239000010437 gem Substances 0.000 claims description 3
- 229910001751 gemstone Inorganic materials 0.000 claims description 3
- 239000003292 glue Substances 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 229910001369 Brass Inorganic materials 0.000 claims 1
- 239000010951 brass Substances 0.000 claims 1
- 238000000407 epitaxy Methods 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 20
- 150000004767 nitrides Chemical class 0.000 abstract description 12
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000007547 defect Effects 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 2
- 230000005622 photoelectricity Effects 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 150000001336 alkenes Chemical class 0.000 description 1
- 230000003471 anti-radiation Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1856—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising nitride compounds, e.g. GaN
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Abstract
The preparation method of the invention discloses a kind of gallium nitride base photodetector based on graphene insert layer, be mainly used for solving the problems, such as prior art nitride material of epitaxial growth in copper substrate it is second-rate with there is no transition zone, preparation step is：The magnetron sputtering aluminium nitride film in α surface sapphire substrate；It transfers graphene on magnetron sputtering aluminium nitride film, obtains the sapphire substrate of covering graphene, and be heat-treated to it；Pulsed nitriding aluminium transition zone is grown on sapphire substrate after heat treatment；Growing low temperature gallium nitride layer, obtains gallium nitride base board on the transition zone；It makes graph window by lithography on gallium nitride base board and makes electrode.The present invention uses magnetron sputtering aluminium nitride and pulsed nitriding aluminium transition zone, and using graphene as insert layer therein, so that gallium nitride is grown in on the substrate compared with Macrolattice mismatch constant, improves the quality of gallium nitride base photodetector, can be used for making gallium nitride base photoelectric device.
Description
Technical field
The invention belongs to microelectronics technology more particularly to a kind of gallium nitride base light based on graphene insert layer structure
The preparation method of electric explorer can be used for the preparation of gallium nitride base photoelectric device.
Background technique
Graphene is a kind of emerging two-dimentional carbon nanomaterial, its band gap is zero, to there is very high electron transfer
Rate can achieve 15,000cm at room temperature2·V-1·s-1, it is the minimum material of the resistivity that is currently known, meanwhile, it also has
There is good translucency, the light transmittance of single layer is about 97.7%.Just because of these characteristics, graphene has in field of photoelectric devices
There is good application prospect.Currently, being the third generation semiconductor material with wide forbidden band of representative due to forbidden bandwidth using gallium nitride
Greatly, the advantages such as electron mobility is high, breakdown electric field is big, have been widely used in the fields such as photoelectric device and electronic device, it
Be suitble to production high frequency, high temperature, anti-radiation and high power device, have great market application potential.But due to gallium nitride
Lattice mismatch and thermal mismatching between epitaxial material and substrate is all larger, so being easy shape during gallium nitride heteroepitaxial growth
At high density dislocation.Further, since the introducing of graphene layer, the defects of breakage that graphene transfer generates, fold, can seriously drop
The quality of low gallium nitride increases the dark current of device, to seriously affect the quality of gallium nitride base photodetector.Therefore,
Growing low-dislocation-density and having the gallium nitride material of high resistant characteristic is the key that prepare high-quality gallium nitride base photodetector
One of problem.
A kind of patent " gallium nitride base photoelectricity with graphene layer of Wuhu Elec-Tech Optoelectronic Science and Technology Co., Ltd.'s application
Device epitaxial structure and preparation method thereof " (application number：201611033181.3 application publication number：CN106340575A) open
A kind of preparation method of the gallium nitride base photoelectric device with graphene layer.The preparation method includes as follows：Step 1, in indigo plant
Jewel substrate surface growing nitride buffer layer and unintentional doped gallium nitride layer；Graphene layer is transferred to extension by step 2
On layer；Step 3 completes the growth of the first n type gallium nitride layer, active layer and p-type gallium nitride layer；Step 4, by gallium nitride base two
Pole pipe completes chip processing procedure.This method is equipped with graphene layer between the first n type gallium nitride layer and unintentional doped gallium nitride layer,
Facilitate cross conduction of the electronics in the first n type gallium nitride layer, it is stifled so as to improve the electric current resistance of conventional gallium nitride based diode
The problem of plug.
But the shortcoming that this method still has is：First, since this method is the epitaxial growth in copper substrate,
The growth temperature for the nitride material being achieved in that has to be lower than the fusing point of copper, and the growth temperature of the higher aluminium nitride of quality is answered
When the fusing point for being higher than copper, therefore by the second-rate of the nitride material of this method acquisition, so that the photoelectricity for influencing preparation is visited
Survey the quality of device；Second, since this method is transferred graphene on gallium nitride, without transition zone, so that graphene itself
Defect can reduce the quality of gallium nitride, and cause to leak electricity, increase the dark current of device.
Summary of the invention
It is an object of the invention to be directed to above-mentioned problem of the prior art, provide a kind of based on graphene insert layer structure
The preparation method of gallium nitride base photodetector improves gallium nitride base photodetector to reduce the dislocation density of gallium nitride
Quality.
The technical scheme is that：Pass through regrowth nitride material after transferring graphene in Sapphire Substrate
Method, the growth temperature of nitride material can be higher than the fusing point of copper, to improve nitride material quality；By adjusting each extension
The growth conditions such as chamber pressure, metal source flux and the temperature of layer improve the matter of the gallium nitride of growth to reduce dislocation density
Amount.
Implementation step includes as follows：
(1) magnetron sputtering obtains sputtering aluminium nitride with a thickness of the aluminium nitride film of 20nm-100nm on a sapphire substrate
Sapphire substrate；
(2) it transfers graphene on magnetron sputtering aluminium nitride film：
(2a) uses CVD method, and single-layer graphene is grown in copper substrate；
The copper substrate for growing single-layer graphene is placed in the (NH of 64g/L by (2b)4)2S2O812-24 hours in solution, to go
Except copper substrate；
The single-layer graphene for removing copper substrate is transferred on the sapphire substrate of sputtering aluminium nitride by (2c), obtains covering stone
The sapphire substrate of black alkene；
(3) sapphire substrate for covering graphene is placed in MOCVD reaction chamber, is passed through hydrogen and ammonia to reaction chamber
Mixed gas 5-10 minutes, and reaction chamber is heated to 600 DEG C -650 DEG C, it is heat-treated 10-20 minutes, the indigo plant after being heat-treated
Jewel substrate；
(4) pressure of MOCVD reaction chamber is adjusted to 40Torr, reaction chamber temperature is increased to 1050 DEG C -1010 DEG C, successively
It is passed through hydrogen, ammonia and silicon source, using on the sapphire substrate of pulse metal organic-matter chemical gas-phase depositing after heat treatment
Pulsed nitriding aluminium transition zone is grown, aluminium nitride substrate is obtained；
(5) keeping chamber pressure is that 40Torr is constant, reaction chamber temperature is dropped to 900 DEG C -1000 DEG C, then be successively passed through
Hydrogen, ammonia and gallium source are grown outside p-type gallium nitride on pulsed nitriding aluminum substrate using metal organic-matter chemical gas-phase depositing
Prolong layer, obtains gallium nitride base board；
(6) gallium nitride base board is cleaned, graph window is made by lithography on substrate after cleaning, obtains making graph window by lithography
Gallium nitride base board；
(7) electron beam evaporation is used on the graphene layer and high-temperature ammonolysis gallium layer of gallium nitride base version according to graph window
The Ti/Au metal electrode that mode makes with a thickness of 60/120nm, respectively cathode and anode complete gallium nitride base photodetector
Production.
Compared with prior art, the present invention has the following advantages that：
First, since the present invention is to transfer graphene on substrate to grow again, overcome the nitride material of growth
The temperature of material lower than copper fusing point and influence the deficiency of nitride material quality, the growth temperature of nitride material is mentioned
Height, improves the quality of the nitride material of growth, to improve the quality of the photodetector of preparation.
Second, since the present invention uses magnetron sputtering aluminium nitride and pulsed nitriding aluminium transition zone, and using graphene as it
In insert layer, influence of the defect of graphene layer to gallium nitride material extension is overcome, so that the electric leakage of gallium nitride material subtracts
It is small, so as to improve the quality of the photodetector of preparation.
Detailed description of the invention
Fig. 1 is implementation flow chart of the invention；
Fig. 2 is the schematic diagram of the section structure of the invention.
Specific embodiment
Technical solutions and effects of the present invention is described further with reference to the accompanying drawings and examples.
Referring to Fig. 2, the gallium nitride base photodetector based on graphene insert layer structure shares 6 layers, is from bottom to top
α surface sapphire substrate, magnetron sputtering aln layer, graphene layer, pulsed nitriding aluminium transition zone, p-type gallium nitride layer, and pulse nitrogen
The graphene layer for changing aluminium transition zone two sides is equipped with cathode, and p-type gallium nitride layer is equipped with anode.
Referring to Fig.1, the present invention provides following three kinds of embodiments.
Embodiment 1：Prepare the photodetector that pulsed nitriding aluminium transition region thickness is 10nm.
Step 1. magnetron sputtering aluminium nitride film in α surface sapphire substrate.
α surface sapphire substrate is placed in magnetic control sputtering system by (1a), and chamber pressure 1Pa is passed through nitrogen and argon gas 5
Minute；
(1b) again using the aluminium of 99.999% purity as target, using rf magnetron sputtering, sputtering is thick on a sapphire substrate
Degree is the aluminium nitride film of 20nm, to alleviate the stress generated between substrate and gallium nitride due to lattice mismatch, obtains sputtering nitrogen
Change the sapphire substrate of aluminium.
Step 2. transfers graphene on magnetron sputtering aluminium nitride film.
(2a) uses CVD method, and the graphene layer of 0.34nm is grown in copper substrate；
Single-layer graphene is placed in the (NH of 64g/L by (2b)4)2S2O812 hours in solution, to remove copper substrate；
Single-layer graphene is transferred in the Sapphire Substrate of sputtering aluminium nitride by (2c), obtains the sapphire of covering graphene
Substrate, so that the temperature of the nitride material of subsequent growth depends on the temperature of Sapphire Substrate.
Step 3. is heat-treated sapphire substrate.
The sapphire substrate for sputtering aluminium nitride is placed in metal organic chemical vapor deposition MOCVD reaction chamber by (3a),
The hydrogen that flow is 600sccm and the mixed gas that flow is 2000sccm ammonia are passed through to reaction chamber；
(3b) the mixed gas for being passed through hydrogen and ammonia after five minutes, reaction chamber temperature is raised to 600 DEG C, to sputtering nitrogen
The substrate for changing aluminium be heat-treated within 10 minutes, the sapphire substrate after being heat-treated.
Step 4. pulse metal organic-matter chemical gas-phase depositing grows pulsed nitriding aluminium transition zone.
It is 40Torr that (4a), which keeps chamber pressure, and temperature is raised to 1050 DEG C, hydrogen and silicon source is kept to be continually fed into instead
Room is answered, ammonia was passed through reaction chamber every six seconds；
(4b) under above-mentioned gas environment, using the substrate of pulse metal organic chemical vapor deposition method after heat treatment
Upper growth thickness is that the aluminium nitride of 10nm obtains pulsed nitriding aluminum substrate as transition zone to promote the quality of material.
Step 5. grows p-type epitaxial layer of gallium nitride.
It is that 40Torr is constant that (5a), which keeps MOCVD chamber pressure, and reaction chamber temperature is dropped to 900 DEG C；
(5b) is successively passed through hydrogen, ammonia and gallium source, is grown on pulsed nitriding aluminum substrate using chemical vapour deposition technique
With a thickness of the p-type epitaxial layer of gallium nitride of 30nm, gallium nitride base board is obtained.
Step 6. photoetching graph window.
(6a) cleans gallium nitride base board, and the gallium nitride base board after cleaning is placed in sol evenning machine, using spin-coating method by negative light
Photoresist is uniformly applied to gallium nitride base board surface, front baking 8 minutes in 80 DEG C of constant temperature oven；
Lithography mask version is placed in gallium nitride base board surface by (6b) in parallel, is exposed 10 seconds under exposure machine, is then set
Develop in butanone solution, to remove the photoresist of not photosensitive part, the gallium nitride base board after development is placed in 175 DEG C
Heat is dried 25 minutes in constant temperature oven, with firm glue film；
Gallium nitride base board after (6c) dries heat is placed in corrosive liquid, erodes the p-type nitridation not being covered by photoresist
Gallium layer and pulsed nitriding aluminium transition zone, expose the graphene layer below them；
(6d) removes photoresist, obtains the gallium nitride base board for making graph window by lithography；
Step 7. makes electrode.
According to the mode of graph window deposited by electron beam evaporation on the graphene layer and high-temperature ammonolysis gallium layer of gallium nitride base version
Production production completes gallium nitride base photodetector with a thickness of the Ti/Au metal electrode of 60/120nm, respectively cathode and anode
Production, as shown in Figure 2.
Embodiment 2：Prepare the photodetector that pulsed nitriding aluminium transition region thickness is 25nm.
Step 1, the magnetron sputtering aluminium nitride film in α surface sapphire substrate.
First α surface sapphire substrate is placed in magnetic control sputtering system, chamber pressure 1Pa, is passed through nitrogen and argon gas 5 divides
Clock, then using the aluminium of 99.999% purity as target, using rf magnetron sputtering, the aluminium nitride of 50nm is sputtered on a sapphire substrate
Film obtains the sapphire substrate of sputtering aluminium nitride to alleviate the stress generated between substrate and gallium nitride due to lattice mismatch.
Step 2 transfers graphene on magnetron sputtering aluminium nitride film.
CVD method is first used, the graphene layer of 0.34nm is grown in copper substrate；Single-layer graphene is set again
In (the NH of 64g/L4)2S2O8To remove copper substrate, the indigo plant that single-layer graphene is transferred to sputtering aluminium nitride is precious within 18 hours in solution
On stone lining bottom, the sapphire substrate of covering graphene is obtained.
Step 3 is heat-treated sapphire substrate.
First the sapphire substrate for sputtering aluminium nitride is placed in metal organic chemical vapor deposition MOCVD reaction chamber, to
Reaction chamber is passed through the mixed gas for the ammonia that the hydrogen that flow is 800sccm and flow are 3000sccm；It is being passed through hydrogen and ammonia
Behind mixed gas 8 minutes of gas, reaction chamber temperature is raised to 630 DEG C, the substrate of sputtering aluminium nitride be heat-treated within 15 minutes,
Sapphire substrate after being heat-treated.
Step 4 grows pulsed nitriding aluminium transition zone with pulse metal organic-matter chemical gas-phase depositing.
Adjusting chamber pressure is 40Torr, and temperature is raised to 1070 DEG C, hydrogen and silicon source is kept to be continually fed into reaction chamber,
Ammonia was passed through reaction chamber every six seconds；Then under above-mentioned gas environment, using pulse metal organic chemical vapor deposition method
Grown on substrates after heat treatment obtains pulse as transition zone with a thickness of the aluminium nitride of 25nm to promote the quality of material
Aluminium nitride substrate.
Step 5 grows p-type epitaxial layer of gallium nitride.
Keeping MOCVD chamber pressure is that 40Torr is constant, and reaction chamber temperature is dropped to 950 DEG C；Then successively it is passed through hydrogen
Gas, ammonia and gallium source, use chemical vapour deposition technique on pulsed nitriding aluminum substrate growth thickness for the p-type gallium nitride of 100nm
Epitaxial layer obtains gallium nitride base board.
Step 6, photoetching graph window.
Gallium nitride base board is cleaned, the gallium nitride base board after cleaning is placed in sol evenning machine, using spin-coating method by negative photoresist
It uniformly is applied to gallium nitride base board surface, front baking 9 minutes, are then placed in nitrogen for lithography mask version in parallel in 80 DEG C of constant temperature oven
Change gallium substrate surface, exposed 13 seconds under exposure machine, then place it in butanone solution and develop, to remove non-photographic department
Gallium nitride base board after development is placed in heat in 175 DEG C of constant temperature oven and dried 35 minutes by the photoresist divided, with firm glue film, then
It places it in corrosive liquid, erodes the p-type gallium nitride layer and pulsed nitriding aluminium transition zone not being covered by photoresist, expose it
Below graphene layer, then remove photoresist, obtain the gallium nitride base board for making graph window by lithography；
Step 7 makes electrode：
The specific implementation of this step is identical as the step 7 of embodiment 1.
Embodiment 3：Prepare the photodetector that pulsed nitriding aluminium transition region thickness is 50nm.
Step A. magnetron sputtering aluminium nitride film in α surface sapphire substrate.
Firstly, α surface sapphire substrate is placed in magnetic control sputtering system, chamber pressure 1Pa is passed through nitrogen and argon gas
5 minutes,
Then, using the aluminium of 99.999% purity as target, using rf magnetron sputtering, thickness is sputtered on a sapphire substrate
Sputtering nitridation is obtained for the aluminium nitride film of 100nm to alleviate the stress generated between substrate and gallium nitride due to lattice mismatch
The sapphire substrate of aluminium.
Step B. is transferred graphene on magnetron sputtering aluminium nitride film.
Firstly, growth thickness is the graphene layer of 0.34nm in copper substrate using CVD method；
Then, single-layer graphene is placed in (the NH of 64g/L4)2S2O8In solution 24 hours to remove copper substrate, by single layer
Graphene is transferred in the Sapphire Substrate of sputtering aluminium nitride, the sapphire substrate of covering graphene is obtained, so that subsequent growth
Nitride material temperature depend on Sapphire Substrate temperature.
Step C. is heat-treated sapphire substrate.
Firstly, the sapphire substrate for sputtering aluminium nitride is placed in metal organic chemical vapor deposition MOCVD reaction chamber,
The hydrogen that flow flow is 1000sccm and the ammonia that process is 5000sccm are passed through to reaction chamber；
Then, the mixed gas for being passed through hydrogen and ammonia after ten minutes, reaction chamber temperature is raised to 650 DEG C, to sputtering
The substrate of aluminium nitride be heat-treated within 20 minutes, the sapphire substrate after being heat-treated.
Step D. pulse metal organic-matter chemical gas-phase depositing grows pulsed nitriding aluminium transition zone.
Holding chamber pressure is 40Torr, and temperature is raised to 1100 DEG C, hydrogen and silicon source is kept to be continually fed into reaction chamber,
Ammonia was passed through reaction chamber every six seconds；
Under above-mentioned gas environment, using raw on the substrate of pulse metal organic chemical vapor deposition method after heat treatment
The aluminium nitride of long 50nm obtains pulsed nitriding aluminum substrate as transition zone to promote the quality of material.
Step E. grows p-type epitaxial layer of gallium nitride：
Keeping MOCVD chamber pressure is that 40Torr is constant, and reaction chamber temperature is dropped to 1000 DEG C；
Successively be passed through hydrogen, ammonia and gallium source, using chemical vapour deposition technique on pulsed nitriding aluminum substrate growth thickness
For the p-type epitaxial layer of gallium nitride of 300nm, gallium nitride base board is obtained.
Step F. photoetching graph window：
Gallium nitride base board is cleaned, gallium nitride base board is placed in sol evenning machine, is uniformly applied to negative photoresist using spin-coating method
Gallium nitride base board surface, front baking 10 minutes in 80 DEG C of constant temperature oven；
Lithography mask version is placed in gallium nitride base board surface in parallel, is exposed 15 seconds under exposure machine, after place it in butanone
Develop in solution, to remove the photoresist of not photosensitive part；
Gallium nitride base board after development is placed in in 175 DEG C of constant temperature oven heat to dry 40 minutes, with firm glue film, then by its
It is placed in corrosive liquid, erodes the p-type gallium nitride layer and pulsed nitriding aluminium transition zone not being covered by photoresist, expose under them
The graphene layer in face；
Photoresist is removed, the gallium nitride base board for making graph window by lithography is obtained；
Step G. makes electrode：
The specific implementation of this step is identical as the step 7 of embodiment 1,.
Above description is only example of the present invention, does not constitute any limitation of the invention, it is clear that for
It, all may be without departing substantially from the principle of the invention, knot after having understood the contents of the present invention and principle for one of skill in the art
In the case where structure, various modifications and change in form and details are carried out, but these amendments based on inventive concept and change
Become still within the scope of the claims of the present invention.
Claims (7)
1. a kind of preparation method of the gallium nitride base photodetector based on graphene insert layer, it is characterised in that including walking as follows
Suddenly：
(1) magnetron sputtering obtains the indigo plant of sputtering aluminium nitride with a thickness of the aluminium nitride film of 20nm-100nm on a sapphire substrate
Jewel substrate；
(2) it transfers graphene on magnetron sputtering aluminium nitride film：
(2a) uses CVD method, and single-layer graphene is grown in copper substrate；
The copper substrate for growing single-layer graphene is placed in the (NH of 64g/L by (2b)4)2S2O812-24 hours in solution, to remove brass
Bottom；
The single-layer graphene for removing copper substrate is transferred on the sapphire substrate of sputtering aluminium nitride by (2c), obtains covering graphene
Sapphire substrate；
(3) sapphire substrate for covering graphene is placed in MOCVD reaction chamber, the mixing of hydrogen and ammonia is passed through to reaction chamber
Gas 5-10 minutes, and reaction chamber is heated to 600 DEG C -650 DEG C, it is heat-treated 10-20 minutes, the sapphire after being heat-treated
Substrate；
(4) pressure of MOCVD reaction chamber is adjusted to 40Torr, reaction chamber temperature is increased to 1050 DEG C -1100 DEG C, is successively passed through
Hydrogen, ammonia and silicon source, using being grown on the sapphire substrate of pulse metal organic-matter chemical gas-phase depositing after heat treatment
Pulsed nitriding aluminium transition zone, obtains aluminium nitride substrate；
(5) keeping chamber pressure is that 40Torr is constant, reaction chamber temperature is dropped to 900 DEG C -1000 DEG C, then be successively passed through hydrogen
Gas, ammonia and gallium source grow p-type epitaxy of gallium nitride using metal organic-matter chemical gas-phase depositing on pulsed nitriding aluminum substrate
Layer, obtains gallium nitride base board；
(6) gallium nitride base board is cleaned, graph window is made by lithography on substrate after cleaning, obtains the nitridation for making graph window by lithography
Gallium substrate；
(7) according to graph window on the graphene layer and high-temperature ammonolysis gallium layer of gallium nitride base version by the way of electron beam evaporation
The Ti/Au metal electrode with a thickness of 60/120nm, respectively cathode and anode are made, the system of gallium nitride base photodetector is completed
Make.
2. the method according to claim 1, wherein in step (1) in α surface sapphire substrate magnetron sputtering nitrogen
Change aluminium, carries out as follows：
α surface sapphire substrate is placed in magnetic control sputtering system by (1a), and control pressure is 1Pa, is passed through nitrogen and argon to reaction chamber
Gas 5 minutes；
(1b) using the aluminium of 99.999% purity as target, using rf magnetron sputtering, sputtered in α surface sapphire substrate with a thickness of
20nm-100nm aluminium nitride film obtains the sapphire substrate of sputtering aluminium nitride.
3. the method according to claim 1, wherein the single-layer graphene in step (2a), with a thickness of
0.34nm。
4. method according to claim 1, which is characterized in that the hydrogen and ammonia being passed through in step (3), flow are respectively
600sccm-1000sccm and 2000sccm-5000sccm.
5. the method according to claim 1, wherein the pulsed nitriding aluminium transition zone in step (4), with a thickness of
10nm-50nm。
6. the method according to claim 1, wherein the p-type gallium nitride layer in step (5), with a thickness of 30nm-
300nm。
7. the method according to claim 1, wherein making window by lithography on gallium nitride base board in step (6)
Figure carries out as follows：
Gallium nitride base board after cleaning is placed in sol evenning machine by (6a), and negative photoresist is uniformly applied to gallium nitride base using spin-coating method
Plate surface, front baking 8-10 minutes in 80 DEG C of constant temperature oven；
Lithography mask version is placed in gallium nitride base board surface by (6b) in parallel, is exposed 10-15 seconds under exposure machine, is then placed it in
Develop in butanone solution, to remove the photoresist of not photosensitive part, the gallium nitride base board after development is placed in 175 DEG C of perseverance
Heat is dried 25-40 minutes in warm baking oven, with firm glue film；
Gallium nitride base board after (6c) dries heat is placed in corrosive liquid, erodes the p-type gallium nitride layer not being covered by photoresist
With pulsed nitriding aluminium transition zone, expose the graphene layer below them；
(6d) removes photoresist, obtains the gallium nitride base board for making graph window by lithography.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110137279A (en) * | 2019-05-17 | 2019-08-16 | 东南大学 | A kind of ultraviolet detector with metal and graphene insert layer |
| CN114566566A (en) * | 2022-02-28 | 2022-05-31 | 吉林大学 | Aluminum nitride solar blind photoelectric detector and preparation method thereof |
| CN117038762A (en) * | 2023-07-14 | 2023-11-10 | 广东工业大学 | Self-powered flexible gallium nitride nanowire array photoelectric detector and processing method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105633225A (en) * | 2016-03-08 | 2016-06-01 | 西安电子科技大学 | Gallium nitride growth method based on graphene and magnetron sputtering aluminum nitride |
| CN105655238A (en) * | 2016-03-08 | 2016-06-08 | 西安电子科技大学 | Silica-based gallium nitride growing method based on graphene and magnetron sputtering aluminum nitride |
| CN105734530A (en) * | 2016-03-08 | 2016-07-06 | 西安电子科技大学 | Method for growing gallium nitride on graphene based on magnetron sputtering of aluminum nitride |
| CN106531824A (en) * | 2016-11-25 | 2017-03-22 | 罗雷 | Heterojunction type photoelectric detector and manufacturing method thereof |
| CN106868472A (en) * | 2017-01-19 | 2017-06-20 | 中国工程物理研究院电子工程研究所 | The growing method and gallium nitride lasers of a kind of nitride epitaxial piece |
-
2018
- 2018-06-28 CN CN201810691195.7A patent/CN108878588A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105633225A (en) * | 2016-03-08 | 2016-06-01 | 西安电子科技大学 | Gallium nitride growth method based on graphene and magnetron sputtering aluminum nitride |
| CN105655238A (en) * | 2016-03-08 | 2016-06-08 | 西安电子科技大学 | Silica-based gallium nitride growing method based on graphene and magnetron sputtering aluminum nitride |
| CN105734530A (en) * | 2016-03-08 | 2016-07-06 | 西安电子科技大学 | Method for growing gallium nitride on graphene based on magnetron sputtering of aluminum nitride |
| CN106531824A (en) * | 2016-11-25 | 2017-03-22 | 罗雷 | Heterojunction type photoelectric detector and manufacturing method thereof |
| CN106868472A (en) * | 2017-01-19 | 2017-06-20 | 中国工程物理研究院电子工程研究所 | The growing method and gallium nitride lasers of a kind of nitride epitaxial piece |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110137279A (en) * | 2019-05-17 | 2019-08-16 | 东南大学 | A kind of ultraviolet detector with metal and graphene insert layer |
| CN110137279B (en) * | 2019-05-17 | 2021-01-12 | 东南大学 | Ultraviolet detector with metal and graphene insertion layer |
| CN114566566A (en) * | 2022-02-28 | 2022-05-31 | 吉林大学 | Aluminum nitride solar blind photoelectric detector and preparation method thereof |
| CN117038762A (en) * | 2023-07-14 | 2023-11-10 | 广东工业大学 | Self-powered flexible gallium nitride nanowire array photoelectric detector and processing method |
| CN117038762B (en) * | 2023-07-14 | 2024-03-26 | 广东工业大学 | Self-powered flexible gallium nitride nanowire array photoelectric detector and processing method |
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