CN108847830A - A kind of digital switch based on MEMS sensor - Google Patents
A kind of digital switch based on MEMS sensor Download PDFInfo
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- CN108847830A CN108847830A CN201810383240.2A CN201810383240A CN108847830A CN 108847830 A CN108847830 A CN 108847830A CN 201810383240 A CN201810383240 A CN 201810383240A CN 108847830 A CN108847830 A CN 108847830A
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/027—Generators characterised by the type of circuit or by the means used for producing pulses by the use of logic circuits, with internal or external positive feedback
- H03K3/03—Astable circuits
- H03K3/0315—Ring oscillators
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K4/00—Generating pulses having essentially a finite slope or stepped portions
- H03K4/06—Generating pulses having essentially a finite slope or stepped portions having triangular shape
- H03K4/08—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape
- H03K4/48—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices
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Abstract
A kind of digital switch based on MEMS sensor solves in the high prior art its current source power consumption, stability difference and prior art loop oscillator that there are a large amount of impulsive noises and the technical problems such as versatility is low the present invention relates to circuit drives technical field.The present invention includes high-precision oscillation circuit, exports triangular pulse, including integrating circuit, and the integrating circuit generates triangle wave output signal according to the state of integration current；More current mirroring circuits export the electric current with fixed bias；Pulse generation circuit, two input terminal are connected respectively to triangular pulse and the electric current and output alternating current pulse described in the output end of the high-precision oscillation circuit and more current mirroring circuits, its output clock pulse modulation；Frequency match circuit is buffered, the alternating current pulse of pulse generation circuit output is received；MEMS sensor array receives the related alternating current pulse of buffering frequency match circuit output.The present invention is used for MEMS sensor driving switch.
Description
Technical field
The present invention relates to circuit drives technical fields, and in particular to a kind of digital switch based on MEMS sensor.
Background technique
Sequence circuit pulse to be treated is the alternating current pulse of Larger Dynamic range.But current mainstream MEMS driving
Equipment is not equipped with high speed alternator driven current mode clock, so being difficult to carry out AC signal when carrying out MEMS sensor driving
Driving.Currently, although existing signal generator is quite mature and mostly signal generator can be directly as MEMS
The Switching Power Supply of sensor, but electromagnetic noise always exists the interference of signal generator, directly affects the long-term steady of product
Qualitative and reliability.On the other hand, digital circuit, analog sensor, in terms of, in signal generator
The requirement of output waveform is higher and higher.Traditional circuit, form is more complicated, using more WeChat ID device, is easy to be disliked
The interference of bad environment is used for a long time there are certain hidden danger, and long-term reliability can not be guaranteed.Prior art square wave hair
The stability and frequency characteristic of raw device are all to be improved.
Summary of the invention
For the above-mentioned prior art, it is an object of that present invention to provide solve the prior art its current source power consumption height, stability
There are a large amount of impulsive noises and the technical problems such as versatility is low in difference and prior art loop oscillator.
In order to achieve the above objectives, the technical solution adopted by the present invention is as follows：
A kind of digital switch based on MEMS sensor, including：
High-precision oscillation circuit exports triangular pulse TCLK, including integrating circuit；
More current mirroring circuits export the electric current with fixed bias；
Pulse generation circuit, two input terminal are connected respectively to the high-precision oscillation circuit and more current mirroring circuits
Output end, its export clock pulse modulation described in triangular pulse TCLK and the electric current and output alternating current pulse；
Frequency match circuit is buffered, the alternating current pulse of pulse generation circuit output is received；
MEMS sensor array receives the related alternating current pulse of buffering frequency match circuit output.
In above scheme, the high-precision oscillation circuit, including
Integrating circuit, the state according to integration current generate triangle wave output signal；
First level sensitive circuit receives the triangle wave output signal, when the level of the triangle wave output signal reaches the first ginseng
When examining level, first detection signal is exported；And
Signal adjustment circuit makes the integration current that first state be presented according to the first detection signal, defeated to change the triangular wave
The voltage level of signal out, and edge pulse signal is generated according to clock, and according to the edge pulse signal by the triangular wave
The voltage level of output signal changes to the second reference level, and so that the integration current is presented the according to the edge pulse signal
Two-state, to change the voltage level of the triangle wave output signal.
In above scheme, the pulse generation circuit includes the first NMOS tube, and drain electrode is connected to more current mirrors
The output end of circuit, grid are connected to the output end of the high-precision oscillation circuit, and source electrode is connected to the pulse and produces
The output end of raw circuit.
In above scheme, the source electrode of first NMOS tube is connected to the pulse generation circuit by first resistor
Output end.
In above scheme, the pulse generation circuit further includes the second NMOS tube, and grid is connected to by phase inverter
The output end of the high-precision oscillation circuit, drain electrode are connected to the output end of more current mirroring circuits, and source electrode passes through string
Join the second resistance of connection and the third NMOS tube ground connection of diode connecting-type.
In above scheme, the high-precision oscillation circuit, including
For providing the current source circuit of loop charge and discharge, the inverter circuit for switching loop output and for providing phase
The buffer circuit of difference, current source circuit and inverter circuit constitute loop oscillation structure.
In above scheme, the impulse generating unit further includes overshoot protection circuit, receives the output of inverter circuit
Clock, and the selectively input power of leakage current source circuit.
In above scheme, the current source circuit, including
First power supply；
First current source, high potential end connect the first power supply；
First field-effect tube, source electrode connect the low potential end of the first current source；
Second field-effect tube, source electrode connect the low potential end of the first current source and grounded drain；
Third field-effect tube, the drain electrode of drain electrode the first field-effect tube of connection；
4th field-effect tube, source electrode connect the source electrode of third field-effect tube；
Second source connects the drain electrode of the 4th field-effect tube；
Second current source, high potential end connects the source electrode of third field-effect tube and low potential end is grounded；
First capacitor is used for charge and discharge charge buffer, and one end connects the first power supply and the other end connects the first field-effect tube
Drain electrode.
In above scheme, the inverter circuit is used to form interior ring oscillation and the switching output of reflexive feedthrough voltage, including
5th field-effect tube, grid connect the drain electrode of the first field-effect tube；
6th field-effect tube, grid connect the drain electrode of the drain electrode of the first field-effect tube and drain electrode the 5th field-effect tube of connection；
7th field-effect tube, grid, drain electrode are all connected with the source electrode of the 6th field-effect tube and source electrode is grounded；
8th field-effect tube, for switching as bias voltage, the source electrode and source electrode of drain electrode the 6th field-effect tube of connection are grounded；
Third power supply；
9th field-effect tube, grid, drain electrode are all connected with the source electrode of the 5th field-effect tube and source electrode connection third power supply；
Tenth field-effect tube, for switching as bias voltage, source electrode connects third power supply and drain electrode the 5th field-effect of connection
The source electrode of pipe；
First phase inverter, input terminal connect the drain electrode of the 5th field-effect tube；
Second phase inverter, third phase inverter and the second capacitor are sequentially connected in series the first phase inverter, and it is anti-that the second capacitor is additionally coupled to the 5th
It is fed back to the grid on road, constitutes the feedback loop of inverter circuit；
Third capacitor, for providing the charging of inner ring oscillation circuit, electric discharge, one end connects the drain electrode of the first field-effect tube and another
End ground connection；
Tenth field-effect tube, the 8th field-effect tube, grid are connected to the output end of third phase inverter, are used for outputting cutting
It changes；
Second field-effect tube, the 4th field-effect tube, grid are connected to the output end of the second phase inverter, are used for charge and discharge
Switching.
In above scheme, the buffer circuit is exported for obtaining two-way delay, including
4th phase inverter, input terminal connect the output end of the second phase inverter；
5th phase inverter, hex inverter constitute latch, the 4th phase inverter of series of latches；
7th phase inverter, input terminal connect latch outputs；
First buffer, the 7th phase inverter of connecting, exports the first square-wave pulse；
Second buffer, the 4th phase inverter of connecting, exports the second square-wave pulse；
First field-effect tube, third field-effect tube, grid are connected to the output end of the 4th phase inverter, are used for charge and discharge
Switching；
The first capacitor, voltage change end are connected with divider resistance, and divider resistance exports triangular pulse.
In above scheme, the overshoot protection circuit, power supply is quickly released when for crossing oscillation, including
Comparator, high electricity end is connected with reference voltage and low electric end connects the grid of the 5th field-effect tube；
NAND gate, input port connect the output end of comparator and receive an enabling pulse；
11st field-effect tube, grid connect the output end of NAND gate, and drain electrode connects the drain electrode of the first field-effect tube and source electrode
Ground connection.
In above scheme, the third field-effect tube, source electrode is also connected with the 4th capacitor, and the 4th capacitor is also grounded.
Compared with prior art, beneficial effects of the present invention：Low in energy consumption and offer frequency matching；Improve its pulse generation
The stability of device realizes more smooth loop oscillation charge and discharge process under the premise of not influencing output characteristics.
Detailed description of the invention
Fig. 1 is module diagram of the invention；
Fig. 2 is high-precision oscillation circuit schematic illustration of the present invention；
Fig. 3 is high-precision oscillation circuit inner part potential point voltage change schematic diagram of the present invention；
Fig. 4 is the circuit diagram of the first current source of the invention.
Specific embodiment
All features disclosed in this specification or disclosed all methods or in the process the step of, in addition to mutually exclusive
Feature and/or step other than, can combine in any way.
The present invention will be further described with reference to the accompanying drawing：
Embodiment 1
High-precision oscillation circuit exports triangular pulse TCLK, including integrating circuit；
More current mirroring circuits export the electric current with fixed bias；
Pulse generation circuit, two input terminal are connected respectively to the high-precision oscillation circuit and more current mirroring circuits
Output end, its export clock pulse modulation described in triangular pulse TCLK and the electric current and output alternating current pulse；
Frequency match circuit is buffered, the alternating current pulse of pulse generation circuit output is received；
MEMS sensor array receives the related alternating current pulse of buffering frequency match circuit output.
In above scheme, the high-precision oscillation circuit, including
The integrating circuit, the state according to integration current generate triangle wave output signal；
First level sensitive circuit receives the triangle wave output signal, when the level of the triangle wave output signal reaches the first ginseng
When examining level, first detection signal is exported；And
Signal adjustment circuit makes the integration current that first state be presented according to the first detection signal, defeated to change the triangular wave
The voltage level of signal out, and edge pulse signal is generated according to clock, and according to the edge pulse signal by the triangular wave
The voltage level of output signal changes to the second reference level, and so that the integration current is presented the according to the edge pulse signal
Two-state, to change the voltage level of the triangle wave output signal.
Embodiment 2
The invention also includes level suppression circuits comprising first node, the first node are connected to by the 4th PMOS tube
It accessory power supply and is grounded by the 5th NMOS tube, the grid of the 4th PMOS tube and the 5th NMOS tube is all connected to auxiliary electricity
Source, wherein the first node is connected with the enable end of the high-precision oscillation circuit.More current mirroring circuits include string
Join the 6th and the 7th PMOS tube of connection, the source electrode of the 6th PMOS tube is connected to accessory power supply, the 7th PMOS tube
Drain electrode is connected to the output ends of more current mirroring circuits, and the grid of the described 6th and the 7th PMOS tube is separately connected first and the
Two bias voltages, first bias voltage are greater than second bias voltage.
For higher versatility and low cost, the present invention uses two buffer registers and a programmable delayer structure
Ring is matched at frequency, as buffering frequency match circuit, it is defeated that two buffer register input terminals receive pulse generation circuit
Alternating current pulse out, the input terminal of the output end connection programmable delayer of one of buffer register, related alternation
Current impulse is collectively formed by the output pulse of programmable delayer and the output pulse of another buffer register.
The high-precision oscillation circuit, in conjunction with Fig. 2 and Fig. 3, field-effect tube Q8, Q12 is equivalent to diode, field-effect tube
Q9, Q13 as feedback control bias voltage switch, field-effect tube Q10, Q11 constitute by field-effect tube Q9, Q13 control etc.
Phase inverter is imitated, the output clock waveform of inverter circuit is clock waveform at potential point C, and the input power of current source circuit includes
Current source I1 and current source I2；Reference clock SCLK can be inputted at potential point A, can also be with defeated at scene effect pipe Q5 grid
Enter, it is ground voltage that circuit primary condition, which is set as potential point A, and field-effect tube Q5, Q10, Q9 are in the conductive state, current source I1
It charges to capacitor C1, is sufficient to make field-effect tube Q10 to end when capacitor C1 voltage is raised to, equivalent phase inverter deflects, current potential
Point D voltage becomes ground voltage from voltage VCC, and field-effect tube Q9 ends and field-effect tube Q13 is connected, field-effect tube Q4 conducting,
Current source I1 is released, and current source I2 discharges to capacitor C1, until field-effect tube Q10 is switched on again, constantly repeats this
One process, and then export oscillation square wave.Due to using capacitor and current source in impulse generator, the complete of actual use device is considered
U.S. degree, charge and discharge lead to may have higher peak voltage value in circuit there may be the window of overlapping, and most probably send out
It is raw to be detected at potential point C so comparator is arranged, for discharging in time peak voltage, can also further be arranged
NAND gate logic circuit is driven using the enable signal of processing chip.
As Fig. 4, the first current source I1 include resistance 101, NMOS tube 102, NMOS tube 103, NMOS tube 104,
NMOS tube 105, PMOS tube 106, PMOS tube 107 and PMOS tube 108：One end of the resistance 101 is grounded, described in another termination
The source electrode of NMOS tube 102；The grid of the NMOS tube 102 connects the grid of the NMOS tube 103 and drains and the NMOS tube 105
Source electrode, drain electrode connects the source electrode of the NMOS tube 104, and source electrode connects one end of the resistance 101；The grid of the NMOS tube 103
It is connected together with drain electrode and connects the source electrode of the NMOS tube 105 and the grid of the NMOS tube 102 again, source electrode ground connection；The NMOS
The grid of pipe 104 connects the drain electrode of the PMOS tube 106 and grid and the drain electrode of the NMOS tube 105, and drain electrode connects the PMOS tube
The grid of 106 grid and the grid of the PMOS tube 107 and drain electrode and the PMOS tube 108, source electrode connect the NMOS tube 102
Drain electrode；The grid of the NMOS tube 105 and drain electrode are connected together connects the drain electrode and the NMOS tube of the PMOS tube 106 again
104 grid, source electrode connect the grid of the NMOS tube 103 and the grid of drain electrode and the NMOS tube 102；The PMOS tube 106
Grid connect the PMOS tube 107 grid and drain electrode and the grid of the PMOS tube 108 and the drain electrode of the NMOS tube 104,
Drain electrode connects the grid of the NMOS tube 105 and the grid of drain electrode and the NMOS tube 104, and source electrode meets supply voltage VCC；It is described
The grid of PMOS tube 107 and drain electrode are connected together meets the grid of the PMOS tube 106 and the grid of the PMOS tube 108 and institute again
The drain electrode of NMOS tube 104 is stated, source electrode meets supply voltage VCC；The grid of the PMOS tube 108 connects the grid of the PMOS tube 106
With the grid of the PMOS tube 107 and the drain electrode of drain electrode and the NMOS tube 104, drain electrode is used as current output terminal IOUT, source electrode
Meet supply voltage VCC.
The voltage at 101 both ends of resistance is the threshold voltage of the NMOS tube 103, and the electric current on the resistance 101 is
For the threshold voltage of the NMOS tube 103 divided by the resistance value of the resistance 101, which passes through 107 mirror image of PMOS tube again
To the PMOS tube 106 and the PMOS tube 108, from the drain electrode output current IO UT of the PMOS tube 108.
The above description is merely a specific embodiment, but scope of protection of the present invention is not limited thereto, any
Belong to those skilled in the art in the technical scope disclosed by the present invention, any changes or substitutions that can be easily thought of, all answers
It is included within the scope of the present invention.
Claims (10)
1. a kind of digital switch based on MEMS sensor, which is characterized in that including：
High-precision oscillation circuit exports triangular pulse TCLK, including integrating circuit；
More current mirroring circuits export the electric current with fixed bias；
Pulse generation circuit, two input terminal are connected respectively to the high-precision oscillation circuit and more current mirroring circuits
Output end, its export clock pulse modulation described in triangular pulse TCLK and the electric current and output alternating current pulse；
Frequency match circuit is buffered, the alternating current pulse of pulse generation circuit output is received；
MEMS sensor array receives the related alternating current pulse of buffering frequency match circuit output.
2. a kind of digital switch based on MEMS sensor according to claim 1, which is characterized in that the pulse produces
Raw circuit includes the first NMOS tube, and drain electrode is connected to the output end of more current mirroring circuits, and grid is connected to the height
The output end of precision oscillating circuit, source electrode are connected to the output end of the pulse generation circuit.
3. a kind of digital switch based on MEMS sensor according to claim 2, which is characterized in that the first NMOS
The source electrode of pipe is connected to the output end of the pulse generation circuit by first resistor.
4. a kind of digital switch based on MEMS sensor according to claim 3, which is characterized in that the pulse produces
Raw circuit further includes the second NMOS tube, and grid is connected to the output end of the high-precision oscillation circuit by phase inverter, leakage
Pole is connected to the output end of more current mirroring circuits, and source electrode passes through the second resistance and diode connecting-type being connected in series
Third NMOS tube ground connection.
5. a kind of digital switch based on MEMS sensor according to claim 1, which is characterized in that the high-precision vibration
Circuit is swung, including
Integrating circuit, the state according to integration current generate triangle wave output signal；
First level sensitive circuit receives the triangle wave output signal, when the level of the triangle wave output signal reaches the first ginseng
When examining level, first detection signal is exported；And
Signal adjustment circuit makes the integration current that first state be presented according to the first detection signal, defeated to change the triangular wave
The voltage level of signal out, and edge pulse signal is generated according to clock, and according to the edge pulse signal by the triangular wave
The voltage level of output signal changes to the second reference level, and so that the integration current is presented the according to the edge pulse signal
Two-state, to change the voltage level of the triangle wave output signal.
6. a kind of digital switch based on MEMS sensor according to claim 1, which is characterized in that the high-precision vibration
Circuit is swung, including
For providing the current source circuit of loop charge and discharge, the inverter circuit for switching loop output and for providing phase
The buffer circuit of difference, current source circuit and inverter circuit constitute loop oscillation structure.
7. a kind of digital switch based on MEMS sensor according to claim 6, which is characterized in that the pulse hair
Raw unit, further includes overshoot protection circuit, receives the output clock of inverter circuit, and selectively leakage current source circuit is defeated
Enter power supply.
8. a kind of digital switch based on MEMS sensor according to claim 7, which is characterized in that the current source
Circuit, including
First power supply；
First current source I1, high potential end connect the first power supply；
First field-effect tube Q5, source electrode connect the low potential end of the first current source I1；
Second field-effect tube Q4, source electrode connect the low potential end of the first current source I1 and grounded drain；
Third field-effect tube Q7, the drain electrode of the first field-effect tube Q5 of drain electrode connection；
4th field-effect tube Q6, source electrode connect the source electrode of third field-effect tube Q7；
Second source connects the drain electrode of the 4th field-effect tube Q6；
Second current source I2, high potential end connects the source electrode of third field-effect tube Q7 and low potential end is grounded；
First capacitor C2 is used for charge and discharge charge buffer, and one end connects the first power supply and the other end connects the first field-effect tube
The drain electrode of Q5.
9. a kind of digital switch based on MEMS sensor according to claim 8, which is characterized in that the phase inverter
Circuit is used to form interior ring oscillation and the switching output of reflexive feedthrough voltage, including
5th field-effect tube Q10, grid connect the drain electrode of the first field-effect tube Q5；
6th field-effect tube Q11, grid connects the drain electrode of the first field-effect tube Q5 and drain electrode connects the 5th field-effect tube Q10's
Drain electrode；
7th field-effect tube Q12, grid, drain electrode are all connected with the source electrode of the 6th field-effect tube Q11 and source electrode is grounded；
8th field-effect tube Q13, for switching as bias voltage, drain electrode connects the source electrode of the 6th field-effect tube Q11 and source
Pole ground connection；
Third power supply；
9th field-effect tube Q8, grid, drain electrode are all connected with the source electrode of the 5th field-effect tube Q10 and source electrode connection third power supply；
Tenth field-effect tube Q9, for switching as bias voltage, source electrode connects the 5th effect of third power supply and drain electrode connection
Should pipe Q10 source electrode；
First phase inverter U15, input terminal connect the drain electrode of the 5th field-effect tube Q10；
Second phase inverter U16, third phase inverter U17 and the second capacitor C3 are sequentially connected in series the first phase inverter U15, the second capacitor C3
It is additionally coupled to the grid of the 5th feedback loop Q10, constitutes the feedback loop of inverter circuit；
Third capacitor C1, for provide inner ring oscillation circuit charging, electric discharge, one end connect the first field-effect tube Q5 drain electrode and
Other end ground connection；
Tenth field-effect tube Q9, the 8th field-effect tube Q13, grid are connected to the output end of third phase inverter U17, use
Switch in output；
Second field-effect tube Q4, the 4th field-effect tube Q6, grid are connected to the output end of the second phase inverter U16, use
Switch in charge and discharge.
10. a kind of digital switch based on MEMS sensor according to claim 9, which is characterized in that the buffering
Circuit is exported for obtaining two-way delay, including
4th phase inverter U18, input terminal connect the output end of the second phase inverter U16；
5th phase inverter U23, hex inverter U24 constitute latch, the 4th phase inverter U18 of series of latches；
7th phase inverter U21, input terminal connect latch outputs；
First buffer U20, connect the 7th phase inverter U21；
Second buffer U19, connect the 4th phase inverter U18；
First field-effect tube Q5, the third field-effect tube Q7, grid are connected to the output end of the 4th phase inverter U18, use
Switch in charge and discharge；
The first capacitor C2, voltage change end are connected with divider resistance, and divider resistance exports triangular pulse TCLK.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810383240.2A CN108847830A (en) | 2018-04-26 | 2018-04-26 | A kind of digital switch based on MEMS sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810383240.2A CN108847830A (en) | 2018-04-26 | 2018-04-26 | A kind of digital switch based on MEMS sensor |
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| Publication Number | Publication Date |
|---|---|
| CN108847830A true CN108847830A (en) | 2018-11-20 |
Family
ID=64212450
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810383240.2A Withdrawn CN108847830A (en) | 2018-04-26 | 2018-04-26 | A kind of digital switch based on MEMS sensor |
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| CN (1) | CN108847830A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110289834A (en) * | 2019-06-24 | 2019-09-27 | 中国科学院西安光学精密机械研究所 | A kind of continuously adjustable image intensifier shutter of width time range |
| CN111508780A (en) * | 2020-04-23 | 2020-08-07 | 中国电子科技集团公司第五十五研究所 | Monolithic integrated multiband control MEMS switch |
| CN112526581A (en) * | 2020-11-26 | 2021-03-19 | 重庆邮电大学 | Time discriminator suitable for radiation detection front-end reading circuit |
| CN112803941A (en) * | 2021-01-07 | 2021-05-14 | 深圳锐盟半导体有限公司 | Touch detection circuit and earphone |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106357241A (en) * | 2016-10-19 | 2017-01-25 | 成都益睿信科技有限公司 | Square-wave generator based on phase inverter circuit |
| CN106501563A (en) * | 2016-10-19 | 2017-03-15 | 成都言行果科技有限公司 | A kind of square wave and three path testing pulse sources of triangular wave |
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2018
- 2018-04-26 CN CN201810383240.2A patent/CN108847830A/en not_active Withdrawn
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106357241A (en) * | 2016-10-19 | 2017-01-25 | 成都益睿信科技有限公司 | Square-wave generator based on phase inverter circuit |
| CN106501563A (en) * | 2016-10-19 | 2017-03-15 | 成都言行果科技有限公司 | A kind of square wave and three path testing pulse sources of triangular wave |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110289834A (en) * | 2019-06-24 | 2019-09-27 | 中国科学院西安光学精密机械研究所 | A kind of continuously adjustable image intensifier shutter of width time range |
| CN111508780A (en) * | 2020-04-23 | 2020-08-07 | 中国电子科技集团公司第五十五研究所 | Monolithic integrated multiband control MEMS switch |
| CN111508780B (en) * | 2020-04-23 | 2022-04-15 | 中国电子科技集团公司第五十五研究所 | Monolithic integrated multiband control MEMS switch |
| CN112526581A (en) * | 2020-11-26 | 2021-03-19 | 重庆邮电大学 | Time discriminator suitable for radiation detection front-end reading circuit |
| CN112803941A (en) * | 2021-01-07 | 2021-05-14 | 深圳锐盟半导体有限公司 | Touch detection circuit and earphone |
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