CN108809081A - A kind of switching circuit based on MEMS sensor - Google Patents
A kind of switching circuit based on MEMS sensor Download PDFInfo
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- CN108809081A CN108809081A CN201810383279.4A CN201810383279A CN108809081A CN 108809081 A CN108809081 A CN 108809081A CN 201810383279 A CN201810383279 A CN 201810383279A CN 108809081 A CN108809081 A CN 108809081A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
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- Engineering & Computer Science (AREA)
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Abstract
A kind of switching circuit based on MEMS sensor, the present invention relates to MEMS sensor actuation techniques field, its current source power consumption of the solution prior art is high, stability is poor, and there are the technical problems such as a large amount of impulsive noises in loop oscillator.The invention mainly comprises impulse generating unit, receives reference clock and output has the first square-wave pulse of relative phase difference and the second square-wave pulse；MEMS sensor receives the first square-wave pulse and receives the second square-wave pulse by phase inverter；Wherein, the impulse generating unit, includes the inverter circuit for providing the current source circuit of loop charge and discharge, for switching loop output and the buffer circuit for providing phase difference, and current source circuit and inverter circuit constitute loop oscillator.
Description
Technical field
The present invention relates to MEMS sensor actuation techniques fields, and in particular to a kind of switch electricity based on MEMS sensor
Road.
Background technology
Sequence circuit pulse to be treated is the alternating current pulse of Larger Dynamic range.But current mainstream MEMS drivings
Equipment is not equipped with high speed alternator driven current mode clock, so when carrying out MEMS sensor driving, it is difficult to carry out AC signal
Driving.Currently, although existing signal generator is quite ripe and mostly signal generator can be directly as MEMS
The Switching Power Supply of sensor, but electromagnetic noise always exists the interference of signal generator, directly affects the long-term steady of product
Qualitative and reliability.On the other hand, in digital circuit, analog sensor, precision instrumentation etc., in signal generator
The requirement of output waveform is higher and higher.Traditional circuit, form is more complicated, using more WeChat ID device, is easy to be disliked
The interference of bad environment is used for a long time there are certain hidden danger, and long-term reliability can not be guaranteed.Prior art square wave is sent out
The stability and frequency characteristic of raw device are all to be improved.
Invention content
For the above-mentioned prior art, present invention aims at offer, the solution prior art its current source power consumption height, stability
Difference, and there are the technical problems such as a large amount of impulsive noises in loop oscillator.
In order to achieve the above objectives, the technical solution adopted by the present invention is as follows：
A kind of switching circuit based on MEMS sensor, including
Impulse generating unit, receives reference clock and output has the first square-wave pulse of relative phase difference and the second square-wave pulse；
MEMS sensor receives the first square-wave pulse and receives the second square-wave pulse and output transducing signal by phase inverter；
Wherein, the impulse generating unit, include for providing the current source circuit of loop charge and discharge, it is defeated for switching loop
The inverter circuit gone out and the buffer circuit for providing phase difference, current source circuit and inverter circuit constitute loop oscillation
Device.
In said program, the MEMS sensor, including array MEMS sensor.
In said program, the MEMS sensor, including MEMS acceleration transducers or MEMS temperature sensor.
In said program, the impulse generating unit further includes overshoot protection circuit, receives the output of inverter circuit
Clock, and the selectively input power of leakage current source circuit.
In said program, the current source circuit, including
First power supply；
First current source, high potential end connect the first power supply；
First field-effect tube, source electrode connect the low potential end of the first current source；
Second field-effect tube, source electrode connect the low potential end of the first current source and grounded drain；
Third field-effect tube, the drain electrode of drain electrode the first field-effect tube of connection；
4th field-effect tube, source electrode connect the source electrode of third field-effect tube；
Second source connects the drain electrode of the 4th field-effect tube；
Second current source, high potential end connects the source electrode of third field-effect tube and low potential end is grounded；
First capacitance is used for charge and discharge charge buffer, and one end connects the first power supply and the other end connects the first field-effect tube
Drain electrode.
In said program, the inverter circuit is used to form interior ring oscillation and the switching output of reflexive feedthrough voltage, including
5th field-effect tube, grid connect the drain electrode of the first field-effect tube；
6th field-effect tube, grid connect the drain electrode of the first field-effect tube and the drain electrode of drain electrode the 5th field-effect tube of connection；
7th field-effect tube, grid, drain electrode are all connected with the source electrode of the 6th field-effect tube and source electrode is grounded；
8th field-effect tube, for being switched as bias voltage, the source electrode and source electrode of drain electrode the 6th field-effect tube of connection are grounded；
Third power supply；
9th field-effect tube, grid, drain electrode are all connected with the source electrode of the 5th field-effect tube and source electrode connection third power supply；
Tenth field-effect tube, for being switched as bias voltage, source electrode connects third power supply and drain electrode the 5th field-effect of connection
The source electrode of pipe；
First phase inverter, input terminal connect the drain electrode of the 5th field-effect tube；
Second phase inverter, third phase inverter and the second capacitance are sequentially connected in series the first phase inverter, and it is anti-that the second capacitance is additionally coupled to the 5th
It is fed back to the grid on road, constitutes the backfeed loop of inverter circuit；
Third capacitance, for providing the charging of inner ring oscillation circuit, electric discharge, one end connects the drain electrode of the first field-effect tube and another
End ground connection；
Tenth field-effect tube, the 8th field-effect tube, grid are connected to the output end of third phase inverter, are used for outputting cutting
It changes；
Second field-effect tube, the 4th field-effect tube, grid are connected to the output end of the second phase inverter, are used for charge and discharge
Switching.
In said program, the buffer circuit is exported for obtaining two-way delay, including
4th phase inverter, input terminal connect the output end of the second phase inverter；
5th phase inverter, hex inverter constitute latch, the 4th phase inverter of series of latches；
7th phase inverter, input terminal connect latch outputs；
First buffer, the 7th phase inverter of connecting, exports the first square-wave pulse；
Second buffer, the 4th phase inverter of connecting, exports the second square-wave pulse；
First field-effect tube, third field-effect tube, grid are connected to the output end of the 4th phase inverter, are used for charge and discharge
Switching.
In said program, the overshoot protection circuit, power supply is quickly released when for crossing oscillation, including
Comparator, high electricity end is connected with reference voltage and low electric end connects the grid of the 5th field-effect tube；
NAND gate, input port connect the output end of comparator and receive an enable signal；
11st field-effect tube, grid connect the output end of NAND gate, and drain electrode connects the drain electrode of the first field-effect tube and source electrode
Ground connection.
In said program, the third field-effect tube, source electrode is also associated with the 4th capacitance, and the 4th capacitance is also grounded.
In said program, second current source, including
First operational amplifier, the first PMOS tube, the first NMOS tube, the second NMOS tube, the second PMOS tube, third NMOS tube and
Four NMOS tubes；
The positive input of first operational amplifier terminates reference voltage, and negative input terminates the source electrode and second of the first NMOS tube
The drain electrode of NMOS tube, the grid of output the first NMOS tube of termination；
The grid of first PMOS tube and drain electrode are connected together connects drain electrode and the grid of the second PMOS tube of the first NMOS tube again,
Source electrode connects supply voltage；
The grid of first NMOS tube connects the output end of the first operational amplifier, and drain electrode connects grid and the drain electrode of the first PMOS tube
With the grid of the second PMOS tube, source electrode connects the drain electrode of the negative input end and the second NMOS tube of the first operational amplifier；
The grid of second NMOS tube meets the drain electrode of the second PMOS tube and the grid of third NMOS tube and drain electrode and the 4th NMOS
The grid of pipe, drain electrode connect the negative input end of the source electrode and the first operational amplifier of the first NMOS tube, source electrode ground connection；
The grid of second PMOS tube connects the drain electrode of the grid and drain electrode and the first NMOS tube of the first PMOS tube, and drain electrode connects second
The grid of the grid of NMOS tube and the grid of third NMOS tube and drain electrode and the 4th NMOS tube, source electrode connect supply voltage；
The grid of the third NMOS tube and drain electrode are connected together the drain electrode of the grid and the second PMOS tube that connect the second NMOS tube again
With the grid of the 4th NMOS tube, source electrode ground connection；
The grid of 4th NMOS tube meets the grid of the second NMOS tube and the grid of third NMOS tube and drain electrode and the 2nd PMOS
The drain electrode of pipe, drain electrode are used as current output terminal IOUT, source electrode ground connection.
Compared with prior art, beneficial effects of the present invention：The stability for improving its impulse generator, do not influence it is defeated
Under the premise of going out characteristic, more smooth loop oscillation charge and discharge process is realized.
Description of the drawings
Fig. 1 is the physical circuit figure of impulse generator of the present invention；
Fig. 2 is the voltage change schematic diagram of capacitance C3 of the present invention and capacitance C2；
Fig. 3 is the voltage change schematic diagram of phase inverter U18 of the present invention and capacitance C3；
Fig. 4 is voltage magnitude change schematic diagram at potential point A, B, C and D of the present invention；
Fig. 5 is the drain-source voltage change schematic diagram of present invention drop-down field-effect Q7；
Fig. 6 is the drain-source voltage change schematic diagram after present invention drop-down field-effect Q7 connection capacitances C4；
Fig. 7 is the circuit diagram of the first current source of the present invention.
Specific implementation mode
All features disclosed in this specification or disclosed all methods or in the process the step of, in addition to mutually exclusive
Feature and/or step other than, can combine in any way.
The present invention will be further described below in conjunction with the accompanying drawings：
Embodiment 1
A kind of switching circuit based on MEMS sensor, including
Impulse generating unit, receives reference clock and output has the first square-wave pulse of relative phase difference and the second square-wave pulse；
MEMS sensor receives the first square-wave pulse PCLK1 and receives the second square-wave pulse PCLK2 and defeated by phase inverter U26
Go out transducing signal BK；
Wherein, the impulse generating unit, include for providing the current source circuit of loop charge and discharge, it is defeated for switching loop
The inverter circuit gone out and the buffer circuit for providing phase difference, current source circuit and inverter circuit constitute loop oscillation
Device.
In Fig. 1, in conjunction with Fig. 2, Fig. 3 and Fig. 4 voltage change, field-effect tube Q8, Q12 is equivalent to diode, field-effect tube
Q9, Q13 as feedback control bias voltage switch, field-effect tube Q10, Q11 constitute by field-effect tube Q9, Q13 control etc.
Phase inverter is imitated, the output clock waveform of inverter circuit is clock waveform at potential point C, and the input power of current source circuit includes
Current source I1 and current source I2；Reference clock SCLK can be inputted at potential point A, can also be defeated at scene effect pipe Q5 grids
Enter, it is ground voltage that circuit primary condition, which is set as potential point A, and field-effect tube Q5, Q10, Q9 are in the conduction state, current source I1
It charges to capacitance C1, is sufficient to make field-effect tube Q10 to end when capacitance C1 voltages are raised to, equivalent phase inverter deflects, current potential
Point D voltages become ground voltage from voltage VCC, and field-effect tube Q9 ends and field-effect tube Q13 conductings, field-effect tube Q4 conductings,
Current source I1 is released, and current source I2 discharges to capacitance C1, until field-effect tube Q10 is switched on again, constantly repeats this
One process, and then export oscillation square wave.Due to using capacitance and current source in impulse generator, the complete of actual use device is considered
U.S. degree, charge and discharge lead to may have higher peak voltage value in circuit, and most probably send out there may be the window of overlapping
It is raw to be detected at potential point C so comparator is arranged, for discharging in time peak voltage, can also further be arranged
NAND gate logic circuit is driven using the enable signal of processing chip.
In Fig. 5 and Fig. 6, Fig. 5, it is apparent that due to different capacitor charge and discharge processes, loop voltage is caused to occur short
Promote peak value and be superimposed the fluctuation of power supply if in practical application, it might even be possible to by part field-effect tube reverse breakdown, cause back
Short out road, to damage device.Fig. 6 is the drain-source voltage variation waveform for increasing the field-effect tube Q7 after safe capacitance C4, is made
It is more smooth to obtain charge and discharge process, without distorted pulse peak in short-term.
Further include peripheral control unit in said program, export the first bias voltage BIAC1 and the second bias voltage BIAC2,
Leading for field-effect tube Q4 and field-effect tube Q6 and field-effect tube Q5 and field-effect tube Q7 is accurately controlled by charging capacitor respectively
Logical and cut-off.
Embodiment 2
As shown in fig. 7, the first current source I1 include resistance 101, NMOS tube 102, NMOS tube 103, NMOS tube 104,
NMOS tube 105, PMOS tube 106, PMOS tube 107 and PMOS tube 108：One end of the resistance 101 is grounded, described in another termination
The source electrode of NMOS tube 102；The grid of the NMOS tube 102 connects the grid of the NMOS tube 103 and drains and the NMOS tube 105
Source electrode, drain electrode connects the source electrode of the NMOS tube 104, and source electrode connects one end of the resistance 101；The grid of the NMOS tube 103
It is connected together the grid of the source electrode and the NMOS tube 102 that connect the NMOS tube 105 again with drain electrode, source electrode ground connection；The NMOS
The grid of pipe 104 connects the drain electrode of the PMOS tube 106 and grid and the drain electrode of the NMOS tube 105, and drain electrode connects the PMOS tube
The grid of 106 grid and the grid of the PMOS tube 107 and drain electrode and the PMOS tube 108, source electrode connect the NMOS tube 102
Drain electrode；The grid of the NMOS tube 105 and drain electrode are connected together the drain electrode for connecing the PMOS tube 106 again and the NMOS tube
104 grid, source electrode connect the grid of the grid and drain electrode and the NMOS tube 102 of the NMOS tube 103；The PMOS tube 106
Grid connect the PMOS tube 107 grid and drain electrode and the PMOS tube 108 grid and the NMOS tube 104 drain electrode,
Drain electrode connects the grid of the grid and drain electrode and the NMOS tube 104 of the NMOS tube 105, and source electrode meets supply voltage VCC；It is described
The grid of PMOS tube 107 and drain electrode are connected together meets the grid of the PMOS tube 106 and the grid of the PMOS tube 108 and institute again
The drain electrode of NMOS tube 104 is stated, source electrode meets supply voltage VCC；The grid of the PMOS tube 108 connects the grid of the PMOS tube 106
With the drain electrode of the grid and drain electrode and the NMOS tube 104 of the PMOS tube 107, drain electrode is used as current output terminal IOUT, source electrode
Meet supply voltage VCC.
The voltage at 101 both ends of the resistance is the threshold voltage of the NMOS tube 103, and the electric current on the resistance 101 is
The resistance value of the threshold voltage of the NMOS tube 103 divided by the resistance 101, the electric current pass through 107 mirror image of the PMOS tube again
To the PMOS tube 106 and the PMOS tube 108, from the drain electrode output current IO UT of the PMOS tube 108.
The above description is merely a specific embodiment, but scope of protection of the present invention is not limited thereto, any
Belong to those skilled in the art in the technical scope disclosed by the present invention, the change or replacement that can be readily occurred in all are answered
It is included within the scope of the present invention.
Claims (10)
1. a kind of switching circuit based on MEMS sensor, which is characterized in that including
Impulse generating unit, receives reference clock and output has the first square-wave pulse of relative phase difference and the second square-wave pulse；
MEMS sensor receives the first square-wave pulse and receives the second square-wave pulse by phase inverter；
Wherein, the impulse generating unit, include for providing the current source circuit of loop charge and discharge, it is defeated for switching loop
The inverter circuit gone out and the buffer circuit for providing phase difference, current source circuit and inverter circuit constitute loop oscillation
Device.
2. a kind of switching circuit based on MEMS sensor according to claim 1, which is characterized in that the pulse hair
Raw unit, further includes overshoot protection circuit, receives the output clock of inverter circuit, and selectively leakage current source circuit is defeated
Enter power supply.
3. a kind of switching circuit based on MEMS sensor according to claim 2, which is characterized in that the current source
Circuit, including
First power supply；
First current source I1, high potential end connect the first power supply；
First field-effect tube Q5, source electrode connect the low potential end of the first current source I1；
Second field-effect tube Q4, source electrode connect the low potential end of the first current source I1 and grounded drain；
Third field-effect tube Q7, the drain electrode of the first field-effect tube Q5 of drain electrode connection；
4th field-effect tube Q6, source electrode connect the source electrode of third field-effect tube Q7；
Second source connects the drain electrode of the 4th field-effect tube Q6；
Second current source I2, high potential end connects the source electrode of third field-effect tube Q7 and low potential end is grounded；
First capacitance C2 is used for charge and discharge charge buffer, and one end connects the first power supply and the other end connects the first field-effect tube
The drain electrode of Q5.
4. a kind of switching circuit based on MEMS sensor according to claim 3, which is characterized in that the phase inverter
Circuit is used to form interior ring oscillation and the switching output of reflexive feedthrough voltage, including
5th field-effect tube Q10, grid connect the drain electrode of the first field-effect tube Q5；
6th field-effect tube Q11, grid connects the drain electrode of the first field-effect tube Q5 and drain electrode connects the 5th field-effect tube Q10's
Drain electrode；
7th field-effect tube Q12, grid, drain electrode are all connected with the source electrode of the 6th field-effect tube Q11 and source electrode is grounded；
8th field-effect tube Q13, for being switched as bias voltage, drain electrode connects the source electrode of the 6th field-effect tube Q11 and source
Pole is grounded；
Third power supply；
9th field-effect tube Q8, grid, drain electrode are all connected with the source electrode of the 5th field-effect tube Q10 and source electrode connection third power supply；
Tenth field-effect tube Q9, for being switched as bias voltage, source electrode connects the 5th effect of third power supply and drain electrode connection
Should pipe Q10 source electrode；
First phase inverter U15, input terminal connect the drain electrode of the 5th field-effect tube Q10；
Second phase inverter U16, third phase inverter U17 and the second capacitance C3 are sequentially connected in series the first phase inverter U15, the second capacitance C3
It is additionally coupled to the grid of the 5th backfeed loop Q10, constitutes the backfeed loop of inverter circuit；
Third capacitance C1, for provide inner ring oscillation circuit charging, electric discharge, one end connect the first field-effect tube Q5 drain electrode and
The other end is grounded；
Tenth field-effect tube Q9, the 8th field-effect tube Q13, grid are connected to the output end of third phase inverter U17, use
Switch in output；
Second field-effect tube Q4, the 4th field-effect tube Q6, grid are connected to the output end of the second phase inverter U16, use
Switch in charge and discharge.
5. a kind of switching circuit based on MEMS sensor according to claim 4, which is characterized in that the buffering electricity
Road is exported for obtaining two-way delay, including
4th phase inverter U18, input terminal connect the output end of the second phase inverter U16；
5th phase inverter U23, hex inverter U24 constitute latch, the 4th phase inverter U18 of series of latches；
7th phase inverter U21, input terminal connect latch outputs；
First buffer U20, connect the 7th phase inverter U21, exports the first square-wave pulse；
Second buffer U19, connect the 4th phase inverter U18, exports the second square-wave pulse；
First field-effect tube Q5, the third field-effect tube Q7, grid are connected to the output end of the 4th phase inverter U18, use
Switch in charge and discharge.
6. a kind of switching circuit based on MEMS sensor according to claim 4, which is characterized in that the overshoot is protected
Protection circuit, power supply is quickly released when for crossing oscillation, including
Comparator U22, high electricity end is connected with reference voltage and low electric end connects the grid of the 5th field-effect tube Q10；
NAND gate U25, input port connect the output end of comparator U22 and receive an enable signal；
11st field-effect tube Q14, grid connect the output end of NAND gate U25, the leakage of the first field-effect tube Q5 of drain electrode connection
Pole and source electrode ground connection.
7. a kind of switching circuit based on MEMS sensor according to claim 3, which is characterized in that the third field
Effect pipe Q7, source electrode are also associated with the 4th capacitance C4, and the 4th capacitance C4 is also grounded.
8. a kind of switching circuit based on MEMS sensor according to claim 3, which is characterized in that second electricity
Stream source I2, including
First operational amplifier, the first PMOS tube, the first NMOS tube, the second NMOS tube, the second PMOS tube, third NMOS tube and
Four NMOS tubes；
The positive input of first operational amplifier terminates reference voltage V REF, and negative input terminates the source electrode and the of the first NMOS tube
The drain electrode of two NMOS tubes, the grid of output the first NMOS tube of termination；
The grid of first PMOS tube and drain electrode are connected together connects drain electrode and the grid of the second PMOS tube of the first NMOS tube again,
Source electrode meets supply voltage VCC；
The grid of first NMOS tube connects the output end of the first operational amplifier, and drain electrode connects grid and the drain electrode of the first PMOS tube
With the grid of the second PMOS tube, source electrode connects the drain electrode of the negative input end and the second NMOS tube of the first operational amplifier；
The grid of second NMOS tube meets the drain electrode of the second PMOS tube and the grid of third NMOS tube and drain electrode and the 4th NMOS
The grid of pipe, drain electrode connect the negative input end of the source electrode and the first operational amplifier of the first NMOS tube, source electrode ground connection；
The grid of second PMOS tube connects the drain electrode of the grid and drain electrode and the first NMOS tube of the first PMOS tube, and drain electrode connects second
The grid of the grid of NMOS tube and the grid of third NMOS tube and drain electrode and the 4th NMOS tube, source electrode meet supply voltage VCC；
The grid of the third NMOS tube and drain electrode are connected together the drain electrode of the grid and the second PMOS tube that connect the second NMOS tube again
With the grid of the 4th NMOS tube, source electrode ground connection；
The grid of 4th NMOS tube meets the grid of the second NMOS tube and the grid of third NMOS tube and drain electrode and the 2nd PMOS
The drain electrode of pipe, drain electrode are used as current output terminal IOUT, source electrode ground connection.
9. a kind of switching circuit based on MEMS sensor according to claim 1, which is characterized in that the MEMS is passed
Sensor, including array MEMS sensor.
10. a kind of switching circuit based on MEMS sensor according to claim 1 or 9, which is characterized in that described
MEMS sensor, including MEMS acceleration transducers or MEMS temperature sensor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810383279.4A CN108809081A (en) | 2018-04-26 | 2018-04-26 | A kind of switching circuit based on MEMS sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810383279.4A CN108809081A (en) | 2018-04-26 | 2018-04-26 | A kind of switching circuit based on MEMS sensor |
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| Publication Number | Publication Date |
|---|---|
| CN108809081A true CN108809081A (en) | 2018-11-13 |
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ID=64093010
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810383279.4A Pending CN108809081A (en) | 2018-04-26 | 2018-04-26 | A kind of switching circuit based on MEMS sensor |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106357241A (en) * | 2016-10-19 | 2017-01-25 | 成都益睿信科技有限公司 | Square-wave generator based on phase inverter circuit |
| CN106373601A (en) * | 2016-10-19 | 2017-02-01 | 成都益睿信科技有限公司 | Self-refreshing pulse generator |
| CN106374888A (en) * | 2016-10-19 | 2017-02-01 | 成都益睿信科技有限公司 | Triangle generator based on loop oscillation of inverter |
-
2018
- 2018-04-26 CN CN201810383279.4A patent/CN108809081A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106357241A (en) * | 2016-10-19 | 2017-01-25 | 成都益睿信科技有限公司 | Square-wave generator based on phase inverter circuit |
| CN106373601A (en) * | 2016-10-19 | 2017-02-01 | 成都益睿信科技有限公司 | Self-refreshing pulse generator |
| CN106374888A (en) * | 2016-10-19 | 2017-02-01 | 成都益睿信科技有限公司 | Triangle generator based on loop oscillation of inverter |
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