CN108831868A - Salient point element of focal plane arrays (FPA) and preparation method thereof - Google Patents
Salient point element of focal plane arrays (FPA) and preparation method thereof Download PDFInfo
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- CN108831868A CN108831868A CN201810380295.8A CN201810380295A CN108831868A CN 108831868 A CN108831868 A CN 108831868A CN 201810380295 A CN201810380295 A CN 201810380295A CN 108831868 A CN108831868 A CN 108831868A
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
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- H—ELECTRICITY
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/1301—Shape
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13139—Silver [Ag] as principal constituent
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- H—ELECTRICITY
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13144—Gold [Au] as principal constituent
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
- H01L2224/1405—Shape
Abstract
The present invention provides salient point elements of a kind of focal plane arrays (FPA) and preparation method thereof, salient point element includes matrix and multiple salient points on matrix, salient point includes salient point main body and cup cylinder, the diameter of cup cylinder is gradually increased from lower to upper, salient point main body is located in cup cylinder and fills full entire cup cylinder, and cup cylinder is made of conductive and certain rigid metal material.Salient point body top area of the present invention is big, can guarantee the yield being electrically connected；The deformation of salient point main body occurs mainly in the lower half portion that diameter is small, intensity is weak, in the case that light-sensitive material height flatness is poor, salient point body height is by the deformation below of compression major embodiment, uniform radial dimension still can be kept since deformation is smaller above, to guarantee uniform electrical contact；And biggish topside area, it is more advantageous to flip chip bonding, avoids lateral sliding；Salient point body exterior has cup cylinder, so that salient point size of main body is uniform, and guarantees that entire salient point will not collapse or deform easily.
Description
Technical field
The present invention relates to the salient point elements and its preparation side of focal plane arrays (FPA) field more particularly to a kind of focal plane arrays (FPA)
Method.
Background technique
The photosignal of the light-sensitive material portion collection of focal plane arrays (FPA) be collect and handle by reading circuit, and
Each pixel unit of array will have an independent unique output channel, to guarantee the signal energy coverlet of each pixel
It stays alone reason, and avoids and adjacent pixel unit signal cross-talk.And the pixel of focal plane arrays (FPA) be all it is thousands of, to realize
The photosignal that numerous pixels is converted is transmitted to reading circuit, traditional conducting wire connection is clearly to be difficult to realize,
It is generally by salient point that each pixel on light-sensitive material is each corresponding on reading circuit in focal plane array technology
Collector unit be attached.The ductile metal material that hardness is low, ductility is good is usually used in salient point, typical such as In,
AuSn, AgSn etc..This salient point can be prepared in light-sensitive material and reading circuit end, or only one end wherein, be carried out in the two
Flip chip bonding couple when, pressure compresses salient point, and makes salient point and be bonded together with the face of bump contacts, complete light-sensitive material with
The electric communication of physical combination and the two that reading circuit is combined into one.
This salient point interconnection technique is being widely applied always, but further with current focal plane arrays (FPA) the relevant technologies
Development, people require it is pixel is smaller, more, closeer, this also means that salient point also will will also become smaller, more accordingly
It is more, closeer.But in existing salient point technology of preparing, after bump size reduces, no matter trans D or high homogeneity are all got over
It is poorer to come.This is because, being especially to represent material with indium, in plated film growth course, the indium on photoresist exposure mask is in addition to becoming
Other than thickness, can also lateral growth, cause exposure mask hole diameter slowly to reduce from lower to upper, thus the salient point diameter in exposure mask hole
Also with slowly becoming smaller, finally salient point is made to become taper.Under the influence of this reason, the height base diameter ratio of general salient point
Example is difficult to be greater than 1:1.On the other hand, since there are also size differences for lateral growth on exposure mask, the diameter of each hole is caused to become
Disunity, the salient point pattern uniformity in final hole also have very big difference.Mainly the problem of bringing be, light-sensitive material with
When reading circuit flip chip bonding, on the one hand, taper salient point is easy to lateral sliding under pressure, leads to the connection of both sides indium column not
Good or even failure；On the other hand, bump size is uneven, especially size salient point less than normal, can bring a large amount of connection not
It is good, influence the performance of array.
Summary of the invention
The purpose of the present invention is to provide salient point elements of a kind of focal plane arrays (FPA) and preparation method thereof, it is intended to for solving
The salient point of existing focal plane arrays (FPA) is easy lateral sliding and size is uneven, causes to be electrically connected bad problem.
The invention is realized in this way：
In a first aspect, the present invention provides a kind of salient point element of focal plane arrays (FPA), it is multiple convex including matrix and on matrix
Point, the salient point include salient point main body and cup cylinder, and cup cylinder bottom is fixed in described matrix, and the diameter of the cup cylinder is under
It is up gradually increased, the salient point main body is located in the cup cylinder and fills full entire cup cylinder, and the cup cylinder, which uses, has conduction
Property and the metal material of certain rigidity be made.
Further, the top surface of the salient point main body forms spherical surface by reflux technique, and the spherical surface is protruding upward in institute
State cup cylinder.
Further, the cup cylinder is made of metallic composite.
Further, the metallic composite includes three-layer metal, and outermost metal uses Cr or Ti or Ni, middle layer
Metal uses Al or Au or Cu or Pt, and innermost layer metal uses Au.
Further, outermost metal with a thickness of 5-50nm, metallic intermediate layer with a thickness of 50-500nm, innermost layer gold
Belong to a thickness of 5-50nm.
Second aspect, the present invention also provides a kind of method of salient point element for preparing above-mentioned focal plane arrays (FPA), including it is following
Step：
（1）One layer photoresist of spin coating on matrix；
（2）Extrude that lower half portion is back taper, top half is vertical cylinder shape on a photoresist by nanometer embossing
Hole；
（3）By coating process, first in the inner wall sedimentation glass cylinder material of hole, salient point material of main part is then deposited in hole；
（4）By stripping technology, the metal on photoresist and photoresist surface is removed, cup cylinder material and the salient point in hole are left
Material of main part.
Further, further comprising the steps of：By reflux technique, salient point material of main part upper surface is melted and forms ball
Shape top surface.
Further, the step（3）It specifically includes：It is compound in hole inner wall deposited metal using electron beam evaporation process
The height of layer, metal composite layer deposition is slightly below the height of hole, and salient point material of main part, salient point main body are then deposited in hole
Material fills full entire hole.
Compared with prior art, the invention has the advantages that：
The salient point element and preparation method thereof of this focal plane arrays (FPA) provided by the invention, the diameter of salient point main body from lower to upper by
It is cumulative big, so that salient point body top area is larger, it can guarantee the yield being electrically connected；In light-sensitive material and reading circuit upside-down mounting
When weldering, under longitudinal pressure, the deformation of salient point main body occurs mainly in the lower half portion that diameter is small, intensity is weak, and light-sensitive material is high
In the case that low flatness is poor, salient point body height is by the deformation below of compression major embodiment, above since deformation is smaller
Still uniform radial dimension can be kept, to guarantee uniform electrical contact；And biggish topside area, it is more advantageous to
Flip chip bonding avoids lateral sliding.Salient point body exterior has cup cylinder, so that salient point size of main body is uniform, and guarantees entire salient point
It will not collapse or deform easily.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of the salient point element of focal plane arrays (FPA) provided in an embodiment of the present invention；
Fig. 2 is a kind of preparation method flow chart of the salient point element of focal plane arrays (FPA) provided in an embodiment of the present invention；
Fig. 3 is the schematic diagram in salient point element preparation process provided in an embodiment of the present invention after photoresist spin coating；
Fig. 4 provides the schematic diagram in salient point element preparation process after nano impression for the embodiment of the present invention；
Fig. 5 is the schematic diagram in salient point element preparation process provided in an embodiment of the present invention after metal deposit；
Fig. 6 is that the schematic diagram after removing photoresist is removed in salient point element preparation process provided in an embodiment of the present invention.
Description of symbols：1- matrix, 2- glass cylinder, 21- glasss of cylinder materials, 3- salient point main body, 31- salient point material of main part, 4-
Photoresist, 5- metallic mold for nano-imprint.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts all other
Embodiment shall fall within the protection scope of the present invention.
As shown in Figure 1, the embodiment of the present invention provides a kind of salient point element of focal plane arrays (FPA), including matrix 1 and it is located at base
Multiple salient points on body, described matrix 1 are light-sensitive material or reading circuit, and when matrix 1 is light-sensitive material, which is used
It is connect in reading circuit, when body 1 is reading circuit, the salient point element with light-sensitive material for connecting, the salient point packet
Salient point main body 3 and cup cylinder 2 are included, the bottom of the cup cylinder 2 is adhered in described matrix 1, and the salient point main body 3 is located at the cup cylinder
In 2 and full entire cup cylinder 2 is filled, the diameter of the cup cylinder 2 is gradually increased from lower to upper, thus the diameter of the salient point main body 3
Also be gradually increased from lower to upper, the salient point main body 3 is made of conductive and ductility metal material, as In,
AuSn, AgSn etc. are pressurized in flip chip bonding and are used as deformation main body, can burst cup cylinder, guarantee the deformability of salient point.The cup cylinder
2 are made of conductive and certain rigid metal material, and cup cylinder 2 is conductive, to guarantee lower resistance, cup cylinder
2 have certain rigidity, and to guarantee that entire salient point will not collapse or deform easily, the bottom of cup cylinder 2 has a plane, with guarantee with
The adhesiving effect of matrix 1.
The diameter of salient point main body of the invention is gradually increased from lower to upper, so that salient point body top area is big, can guarantee
The yield being electrically connected；When light-sensitive material and reading circuit flip chip bonding, under longitudinal pressure, the deformation of salient point main body mainly occurs
In the lower half portion that diameter is small, intensity is weak, in the case where light-sensitive material height flatness is poor, salient point body height is compressed
In major embodiment deformation below, uniform radial dimension still can be kept since deformation is smaller above, to guarantee uniform
Electrical contact；And biggish topside area, it is more advantageous to flip chip bonding, avoids lateral sliding.Salient point body exterior has cup
Cylinder so that salient point size of main body is uniform, and guarantees that entire salient point will not collapse or deform easily.
As the preferred of the present embodiment, the top surface of the salient point main body 3 forms spherical surface by reflux technique, the spherical surface to
It is convex for the cup cylinder 2 so that the top materials of salient point main body 3 are more uniform, be electrically connected more stable.
As the preferred of the present embodiment, the cup cylinder 2 is made of metallic composite.In one embodiment, described
Metallic composite includes three-layer metal, and outermost metal needs and using the good metal of adhesiveness Cr can be used in substrate contact
Or Ti or Ni etc., metallic intermediate layer is as cup cylinder material of main part, using the good metal of electric conductivity and rigidity, can be used Al or Au or
Cu or Pt etc., innermost layer metal needs will be adhered to and be infiltrated with salient point main body, and Au can be used.Outermost layer and innermost layer are as adhesion layer
Or soakage layer, the too thick increase that can bring cost is too thin it cannot be guaranteed that due effect, intermediate host layer too it is thin cannot support it is convex
Point main body, it is too thick to bring increased costs and be unfavorable for the deformation when being pressurized of salient point main body, it is therefore preferred that outermost metal
With a thickness of 5-50nm, metallic intermediate layer with a thickness of 50-500nm, innermost layer metal with a thickness of 5-50nm.
As shown in Fig. 2, on the other hand, the embodiment of the present invention also provides a kind of salient point element for preparing above-mentioned focal plane arrays (FPA)
Method, include the following steps：
（1）One layer photoresist 4 of spin coating on matrix 1
（2）Extrude that lower half portion is back taper, top half is vertical cylinder shape on a photoresist by nanometer embossing
Hole；
（3）By coating process, first in the inner wall sedimentation glass cylinder material 21 of hole, salient point material of main part is then deposited in hole
31；
（4）By stripping technology, the metal on photoresist 4 and photoresist surface is removed, leaves cup cylinder material in hole and convex
Point material of main part；
（5）By reflux technique, salient point material of main part upper surface is melted and forms spherical top surface.
Above steps is described in detail below：
As shown in figure 3, the step（1）In, matrix 1 is light-sensitive material or reading circuit, in light-sensitive material or reading circuit
One layer photoresist 4 of entire upper surface spin coating.
As shown in figure 4, the step（2）In, use metallic mold for nano-imprint 5 to extrude lower half portion on photoresist 4 bottom of as
The hole that portion has the back taper of certain plane, top half is vertical cylinder shape, back taper bottom have certain plane, guarantee
The stability of salient point and matrix adherency, the shape of metallic mold for nano-imprint 5 are：First half is the taper that top has certain plane,
Latter half of is cylinder, and taper purpose is to prepare back taper hole, and cylinder is to make hole top half side wall hang down
Directly, the metal after such metal-coated membrane in hole and the metal on photoresist surface are to disconnect, and guarantee to be easily peeled off below.
As shown in figure 5, the step（3）It specifically includes：Using electron beam evaporation process in hole inner wall sedimentation glass cylinder material
Metal composite layer can be used in material 21, cup cylinder material 21, and the metal composite layer includes three-layer metal, and outermost metal needs and base
Cr or Ti or Ni etc. can be used using the good metal of adhesiveness in body contact, and metallic intermediate layer is used as cup cylinder material of main part
Electric conductivity and rigid good metal, can be used Al or Au or Cu or Pt etc., innermost layer metal needs will be adhered to and be soaked with salient point main body
Profit, can be used Au etc..Preferably, outermost metal with a thickness of 5-50nm, metallic intermediate layer with a thickness of 50-500nm, most in
Layer metal with a thickness of 5-50nm.When metallic intermediate layer and innermost layer metal use identical metal, then metal composite layer phase
When in including double layer of metal.For example, the metal composite layer that electron beam evaporation process deposits one layer of CrAlAu can be used, every thickness degree
Respectively 20nm, 300nm, 30nm.Or the metal composite layer of one layer of TiAu, every thickness degree are deposited using electron beam evaporation process
Respectively 30nm, 400nm, wherein Au is as cup cylinder main body and salient point adhesion layer.The height that cup cylinder material 21 deposits is slightly below
The height of hole.Then salient point material of main part 31 is deposited in hole, salient point material of main part 31 can use In, AuSn, AgSn
Deng the full entire hole of the filling of salient point material of main part 31, so that the top surface of salient point material of main part 31 is protruding upward in cup cylinder material 21.
As shown in fig. 6, the step（4）In, sample is put into acetone and is impregnated, removes photoresist 4, while removing photoetching
Metal other than glue surface, hole, including the cup cylinder material 21 and salient point material of main part 31 other than photoresist surface, hole.
As shown in Figure 1, the step（5）In, sample is flowed back, makes to become smooth, circular at the top of salient point main body 3
Spherical surface.Shown step（5）As a preferred step, it is therefore an objective to so that the top materials of salient point main body 3 are more uniform, electricity
Connection is more stable, in other embodiments, can also be without this step.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Within mind and principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (8)
1. a kind of salient point element of focal plane arrays (FPA), multiple salient points including matrix and on matrix, it is characterised in that：It is described
Salient point includes salient point main body and cup cylinder, and cup cylinder bottom is fixed in described matrix, the diameter of the cup cylinder from lower to upper by
Cumulative big, the salient point main body is located in the cup cylinder and fills full entire cup cylinder, and the cup cylinder uses conductive and one
The metal material of fixed rigidity is made.
2. the salient point element of focal plane arrays (FPA) as described in claim 1, it is characterised in that：The top surface of the salient point main body passes through
Reflux technique forms spherical surface, and the spherical surface is protruding upward in the cup cylinder.
3. the salient point element of focal plane arrays (FPA) as described in claim 1, it is characterised in that：The cup cylinder uses Metals composite
Material is made.
4. the salient point element of focal plane arrays (FPA) as claimed in claim 3, it is characterised in that：The metallic composite includes three
Layer metal, outermost metal use Cr or Ti or Ni, and metallic intermediate layer uses Al or Au or Cu or Pt, and innermost layer metal uses
Au。
5. the salient point element of focal plane arrays (FPA) as claimed in claim 4, it is characterised in that：Outermost metal with a thickness of 5-
50nm, metallic intermediate layer with a thickness of 50-500nm, innermost layer metal with a thickness of 5-50nm.
6. a kind of method for preparing the salient point element of focal plane arrays (FPA) as described in claim 1-5 is any, which is characterized in that including
Following steps：
（1）One layer photoresist of spin coating on matrix；
（2）Extrude that lower half portion is back taper, top half is vertical cylinder shape on a photoresist by nanometer embossing
Hole；
（3）By coating process, first in the inner wall sedimentation glass cylinder material of hole, salient point material of main part is then deposited in hole；
（4）By stripping technology, the metal on photoresist and photoresist surface is removed, cup cylinder material and the salient point in hole are left
Material of main part.
7. preparing the method for the salient point element of focal plane arrays (FPA) as claimed in claim 6, which is characterized in that further include following step
Suddenly：By reflux technique, salient point material of main part upper surface is melted and forms spherical top surface.
8. preparing the method for the salient point element of focal plane arrays (FPA) as claimed in claim 6, it is characterised in that：The step（3）
It specifically includes：Using electron beam evaporation process in hole inner wall deposited metal composite layer, the height of metal composite layer deposition is slightly lower
In the height of hole, salient point material of main part is then deposited in hole, salient point material of main part fills full entire hole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810380295.8A CN108831868A (en) | 2018-04-25 | 2018-04-25 | Salient point element of focal plane arrays (FPA) and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810380295.8A CN108831868A (en) | 2018-04-25 | 2018-04-25 | Salient point element of focal plane arrays (FPA) and preparation method thereof |
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| CN108831868A true CN108831868A (en) | 2018-11-16 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112045329A (en) * | 2020-09-07 | 2020-12-08 | 中国电子科技集团公司第二十四研究所 | Flip-chip bonding process method for ball mounting on metal substrate |
Citations (8)
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Application publication date: 20181116 |