CN100511661C - Microelectronic element with elastic conductive projection and method of manufacture - Google Patents

Microelectronic element with elastic conductive projection and method of manufacture Download PDF

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Publication number
CN100511661C
CN100511661C CNB2007100370460A CN200710037046A CN100511661C CN 100511661 C CN100511661 C CN 100511661C CN B2007100370460 A CNB2007100370460 A CN B2007100370460A CN 200710037046 A CN200710037046 A CN 200710037046A CN 100511661 C CN100511661 C CN 100511661C
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China
Prior art keywords
conductive
elastic
projection
conductive layer
microelectronic element
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CNB2007100370460A
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CN101083238A (en
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贾磊
王志平
丁汉
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Shanghai Jiaotong University
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Shanghai Jiaotong University
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Priority to CNB2007100370460A priority Critical patent/CN100511661C/en
Publication of CN101083238A publication Critical patent/CN101083238A/en
Priority to PCT/CN2008/000226 priority patent/WO2008095405A1/en
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Abstract

The invention provides a micro-electronics component which has an elastic electric conduction ridge, including the semiconductor chip and conductance ridge which establishes on the semiconductor chip surface, its characteristic lie in: the conductance ridge includes a conducting layer and an elastic conducting layer, the conducting layer electric interlocks with the semiconductor chip surface weld pad, the elastic conducting layer connects with the conducting layer metallurgy. Simultaneously it provided the manufacture method of the micro-electronics component, as well as the seal structure and the liquid crystal display installment. According to the invention, no need to use anisotropy conducting resin coating, the obtained seal structure compares to which used the anisotropy conducting resin coating, it has the lower connection resistance, simultaneously avoids short-circuiting occurrence.

Description

Have microelectronic element and the manufacture method and the application of elastic conductive projection
Technical field
The present invention relates to microelectronics technology, a kind of microelectronic element that has elastic conductive projection specifically is provided, comprise the encapsulating structure and the liquid crystal indicator of this microelectronic element, and the manufacture method of this microelectronic element.
Background technology
In the middle of existing microelectronic manufacturing technology field, (AnisotropicConductive Film is that (Flip Chip, FC) technology is being played the part of crucial role for the flip-chip of interconnected medium ACF) with anisotropic conductive film.With a kind of ACF commonly used at present is example, and it is made up of high molecular polymer and the conductive particle that is dispersed in wherein, and the diameter of conductive particle is approximately 3～5 microns, the resin particle of normally a kind of surface parcel conductive metal material.
In the middle of existing flip chip technology (fct), the manufacturing process that ACF is widely used mainly comprises: chip for driving directly is encapsulated in the manufacture method (COG, i.e. chip on glass) on the glass substrate on charged road; Chip for driving is encapsulated in manufacture method (COF, i.e. chip on FPC) on the flexible PCB (FPC); And chip for driving is packaged in manufacture method (COB, i.e. chip onboard) on the general printed circuit board (PCB).Wherein, COG technology and COF technology are to make two key technologies of liquid crystal indicator.
The application of ACF in the middle of flip chip technology (fct) is described below.Represent glass substrate, flexible PCB, printed circuit board (PCB) or other circuit board pieces in the above-mentioned manufacture method with charged base board, this charged base board comprises substrate, usually its surface or inside are formed with circuit, and the splicing ear (pad) that is formed on substrate surface, this splicing ear is electrically connected with circuit on the substrate; On the other hand, chip for driving is integrated with the semiconductor chip of circuit and is formed on this semiconductor chip surface by inside and has certain thickness conductive projection (bump) and form.In encapsulation process, ACF is placed between chip for driving and the charged base board, and corresponding with it splicing ear is aimed at mutually.Then this chip for driving and charged base board are heated and pressurize, after being heated, high molecular polymer among the ACF solidifies, chip for driving and charged base board are bonded and fixed at together, meanwhile, the conductive particle that part is dispersed in the middle of the high molecular polymer is trapped between the outstanding relatively conductive projection and splicing ear, and under the external force condition, be squeezed, like this, by the conductive metal material of its surface parcel, the conductive particle that is captured has just been set up between conductive projection and splicing ear and has been electrically connected.Wherein, the kernel of conductive particle, resin particle has certain elasticity, therefore when being squeezed certain elastic deformation can take place, when the distance between conductive projection and the splicing ear was subjected to the external environment condition variable effect and changes, this strain can make between conductive projection and the splicing ear and remain reliable electrical connection by conductive particle.This shows that it is interconnected to use ACF to carry out flip-chip, the mechanical fixation between chip for driving and the charged base board is finished with being electrically connected simultaneously, and conductive particle has guaranteed interconnected reliability.
Use ACF and carry out flip-chip when interconnected, because the circuit turn-on between chip for driving and the charged base board realizes by conductive particle, so the connection resistance between conductive projection and the splicing ear depends primarily on the number that is trapped in the conductive particle between it.A problem of bringing like this is: the conductive particle number between conductive projection and the splicing ear increases thereby make it connect resistance, even causes and open circuit owing to the loss everywhere of conductive particle in encapsulation process becomes very little.
On the other hand, after the encapsulation that application ACF carries out is finished, be full of the polymer after solidifying between the conductive projection of chip for driving and between the splicing ear of charged base board, keep insulation, but some conductive particles of catching at large can have interspersed among therebetween also.Another problem of bringing like this is: too many conductive particle concentrates between the adjacent conductive projection, forms the electrical connection of side direction, promptly adjacent conductive projection and adjacent splicing ear is caused short circuit.
Increase day by day along with the microelectronic product function, packaging density progressively improves, the quantity of the conductive projection on the chip surface unit are also is doubled and redoubled, and this just causes the surface area of conductive projection and adjacent spacing to reduce simultaneously, and the problem of above-mentioned two aspects will take place more and more easily.
Summary of the invention
The objective of the invention is at the deficiencies in the prior art, a kind of microelectronic element that has elastic conductive projection is provided, this microelectronic element need not to use anisotropic conductive film in encapsulation process, the gained encapsulating structure is compared with the encapsulating structure that uses anisotropic conductive film, have lower connection resistance, avoid short circuit to take place simultaneously.The manufacture method of this microelectronic element is provided simultaneously, and the encapsulating structure and the liquid crystal indicator that comprise this microelectronic element.
On the one hand, the invention provides a kind of microelectronic element that has elastic conductive projection, comprise semiconductor chip and the conductive projection that is arranged on this semiconductor chip surface weld pad, it is characterized in that described conductive projection comprises a conductive layer and an elastic conducting layer, described conductive layer is electrically connected with described semiconductor chip surface weld pad, and described elastic conducting layer is connected with described conductive layer is metallurgical.
Wherein, described conductive layer is a metal level, by at least a metal of Au, Cu, Al, Ni, Sn, Pb, Bi, Ag, In, Sb, Cd, Zn, Ga or the alloy composition of these metals of being selected from.The thickness of described conductive layer is not less than about 5 microns.
In addition, described elastic conducting layer is made up of conductive particle.Described conductive particle is the metallic particles or the resin particle of surface metallization.
In addition, in the above-mentioned microelectronic element that has an elastic conductive projection, can also comprise between the weld pad of described semiconductor chip and the described conductive projection projection bottom metal layers (under bump metallurgy, UBM).
On the other hand, the invention provides a kind of microelectronic element that has elastic conductive projection, comprise that circuit unit and the conductive stud that is arranged on this circuit unit are fast, it is characterized in that described conductive projection comprises a conductive layer and an elastic conducting layer, described conductive layer is electrically connected with circuit on the described circuit unit, and described elastic conducting layer is connected with described conductive layer is metallurgical.
Wherein, described conductive layer is a metal level, by at least a metal of Au, Cu, Al, Ni, Sn, Pb, Bi, Ag, In, Sb, Cd, Zn, Ga or the alloy composition of these metals of being selected from.The thickness of described conductive layer is not less than about 5 microns.
In addition, described elastic conducting layer is made up of conductive particle.Described conductive particle is the metallic particles or the resin particle of surface metallization.
On the other hand, the invention provides a kind of above-mentioned each encapsulating structure of the microelectronic element that has elastic conductive projection that comprises, it is characterized in that described microelectronic element that has an elastic conductive projection and charged base board bonding, the elastic conductive projection of this microelectronic element is staggered relatively with the splicing ear of this charged base board and be electrically connected.
Wherein, the bonding of described microelectronic element that has an elastic conductive projection and charged base board realizes that by the insulation viscose glue this insulation viscose glue does not comprise any conductive material.
On the other hand, the invention provides a kind of above-mentioned each liquid crystal indicator of the microelectronic element that has elastic conductive projection that comprises, it is characterized in that described microelectronic element that has an elastic conductive projection and display panels assembly bonding, the elastic conductive projection of this microelectronic element is staggered relatively with the splicing ear of this display panels assembly and be electrically connected.
Wherein, the bonding of described microelectronic element that has an elastic conductive projection and display panels assembly realizes that by the insulation viscose glue this insulation viscose glue does not comprise any conductive material.
On the other hand, the invention provides a kind of manufacture method that has the microelectronic element of elastic conductive projection, it is characterized in that may further comprise the steps: the semiconductor chip that (a) provides a surface to have weld pad deposits a conductive layer on the weld pad of this semiconductor chip surface; (b) form an elastic conducting layer on this conductive layer, this elastic conducting layer is connected with this conductive layer is metallurgical, obtains the described microelectronic element that has elastic conductive projection.
Wherein, the formation of described conductive layer is to form a metal level by electro-plating method.The formation of described conductive layer is divided into following two steps: one first kind of metal material of (1) deposition, and this metal material is the metal of at least a Au of being selected from, Cu, Ni, Al or the alloy of these metals; (2) one second kind of metal material of deposition, this metal material is the metal of at least a Au of being selected from, Cu, Al, Ni, Sn, Pb, Bi, Ag, In, Sb, Cd, Zn, Ga or the alloy of these metals, wherein, the fusing point of this second kind of metal material is lower than the fusing point of this first kind of metal material.
In addition, the formation of described elastic conducting layer is that conductive particle metallurgy is connected to this conductive layer.Described conductive particle is the metallic particles or the resin particle of surface metallization.It is by adding thermosetting that described elastic conducting layer is connected with the metallurgy of conductive layer, or heating and pressurization form.
On the other hand, the invention provides a kind of manufacture method that has the microelectronic element of elastic conductive projection, it is characterized in that may further comprise the steps: the semiconductor chip (aa) is provided, this semiconductor chip surface comprises a weld pad, forms a projection bottom metal layers on the weld pad of this semiconductor chip surface; (bb) form a non-conductive layer on this projection bottom metal layers and semiconductor chip surface, and this non-conductive layer of patterning, to form at least one opening, this opening exposes this projection bottom metal layers; (cc) in described opening, form a conductive layer; (dd) form an elastic conducting layer on described conductive layer, this elastic conducting layer is connected with this conductive layer is metallurgical; (ee) remove described non-conductive layer, obtain the described microelectronic element that has elastic conductive projection.
Wherein, the formation of described conductive layer is to form a metal level by electro-plating method.The formation of described conductive layer is divided into following two steps: one first kind of metal material of (1) deposition, and this metal material is the metal of at least a Au of being selected from, Cu, Ni, Al or the alloy of these metals; (2) one second kind of metal material of deposition, this metal material is the metal of at least a Au of being selected from, Cu, Al, Ni, Sn, Pb, Bi, Ag, In, Sb, Cd, Zn, Ga or the alloy of these metals, wherein, the fusing point of this second kind of metal material is lower than the fusing point of this first kind of metal material.
In addition, the formation of described elastic conducting layer is that conductive particle metallurgy is connected to this conductive layer.Described conductive particle is the metallic particles or the resin particle of surface metallization.It is by adding thermosetting that described elastic conducting layer is connected with the metallurgy of conductive layer, or heating and pressurization form.
On the other hand, a kind of manufacture method that has the microelectronic element of elastic conductive projection that the present invention relates to also is applicable to circuit unit, it is characterized in that may further comprise the steps: a circuit unit (aaa) is provided, deposit a conductive layer on this circuit unit surface, and this conductive layer is electrically connected with circuit on this circuit unit; (bbb) form an elastic conducting layer on this conductive layer, this elastic conducting layer is connected with this conductive layer is metallurgical, obtains the described microelectronic element that has elastic conductive projection.
Wherein, the deposition of described conductive layer be with circuit unit on circuit simultaneously, use the same method and same material forms.The deposition of described conductive layer is to utilize the metal of at least a Au of being selected from, Cu, Al, Ni, Sn, Pb, Bi, Ag, In, Sb, Cd, Zn, Ga or the alloy of these metals to form described conductive layer.
In addition, the formation of described elastic conducting layer is that conductive particle metallurgy is connected to this conductive layer.Described conductive particle is the metallic particles or the resin particle of surface metallization.It is by adding thermosetting that described elastic conducting layer is connected with the metallurgy of conductive layer, or heating and pressurization form.
The microelectronic element that has elastic conductive projection provided by the invention need not to use anisotropic conductive film in encapsulation process, the gained encapsulating structure is compared with the encapsulating structure that uses anisotropic conductive film, on the one hand, number by the conductive particle that elastic conducting layer provided is more stable than the number of the conductive particle that is captured in the existing ACF encapsulation process, and that has avoided that indivedual conductive projections and splicing ear cause owing to the seizure conductive particle is very few is connected too high in resistance even opens circuit.On the other hand, do not have the conductive particle of distribution between the adjacent conductive projection and between the splicing ear, the occurrence probability of short circuit also can reduce greatly.Along with the progressively raising of present microelectronics Packaging density, the advantage of above-mentioned two aspects will be more obvious.
Description of drawings
Fig. 1 is the structural representation that has the chip for driving of elastic conductive projection according to an embodiment of the invention;
Fig. 2 to Fig. 4 is the schematic diagram of the method for a kind of manufacturing chip for driving of having elastic conductive projection according to an embodiment of the invention;
Fig. 5 to Figure 11 is the another kind of schematic diagram of making the method for the chip for driving that has elastic conductive projection according to an embodiment of the invention;
Figure 12 is the profile of another kind of manufacture method of elastic conducting layer that has the chip for driving of elastic conductive projection according to an embodiment of the invention;
Figure 13 has the schematic diagram that the chip for driving of elastic conductive projection is used according to an embodiment of the invention in encapsulating structure;
Figure 14 is the schematic diagram of liquid crystal display device assembly, and wherein the form that encapsulates with COG and COF has been installed the chip for driving that has elastic conductive projection according to the embodiment of the invention;
Embodiment
Describe the present invention more fully hereinafter with reference to accompanying drawing, the preferred embodiments of the present invention have been shown in the accompanying drawing.
Described embodiment provides explanation with reference to the LCD device drive chip (being designated hereinafter simply as chip for driving) as microelectronic element, and its characteristic will be described by the mode of example.
Fig. 1 is the structural representation that has the chip for driving of elastic conductive projection according to an embodiment of the invention.
In view of carrying out the description of the interconnected problem that encapsulating structure faced of upside-down mounting for present use ACF in the front, one embodiment of the invention provide a kind of chip for driving 1 that has elastic conductive projection 4, comprise semiconductor chip 2 and the elastic conductive projection 4 that is arranged on this semiconductor chip surface weld pad 3.It is characterized in that described elastic conductive projection 4 comprises a conductive layer 5 and an elastic conducting layer 6, wherein, described conductive layer 5 is electrically connected with semiconductor chip 2 surperficial weld pads 3, described elastic conducting layer 6 and 5 metallurgical connections of conductive layer.
In one embodiment of this invention, conductive layer 5 is metal levels, profile is similar with " stalk formula " conductive projection on the present chip for driving, by at least a metal of Sn, Au, Cu, Pb, Bi, Ag, In, Al, Ni, Sb, Cd, Zn, Ga or the alloy composition of these metals of being selected from, preferably, form by Au and its surperficial Au-Sn alloy layer.And elastic conducting layer 6 is made up of conductive particle 7, and conductive particle 7 is the metallic particles or the resin particle of surface metallization, or the mixing of two kinds of particles.Generally, metallic particles and resin particle all have certain elasticity, but the elastic deformability of resin particle is better than metallic particles, because chip for driving 1 will be used to be encapsulated in panel of LCD, substrate is a glass, quality is harder, and is not yielding, therefore, elasticity of demand conductive projection 4 has bigger regime of elastic deformation, satisfy the reliability requirement of encapsulating structure, preferably, conductive particle 7 is resin particles of surface metallization.In one embodiment of this invention, the metal material of conductive particle 7 surface-coated is by at least a metal of Sn, Au, Cu, Pb, Bi, Ag, In, Al, Ni, Sb, Cd, Zn, Ga or the alloy composition of these metals of being selected from, from electric conductivity, preferred Au, and the surface can form metallurgical connection for the Au-Sn alloy on the conductive particle 7 of Au and conductive layer 5 surfaces at the liquidus temperature of its corresponding component or when above.
This shows, it is some process characteristics of the flip-chip of interconnected medium with ACF at present that this chip for driving 1 that has elastic conductive projection 4 has possessed, its encapsulation process is similar with the encapsulation process of using ACF, but no longer need ACF, and can utilize the high molecular polymer that is similar to composition ACF by being heating and curing, chip for driving 1 and charged base board that needs are encapsulated bond mutually, simultaneously, and the splicing ear of charged base board is staggered relatively and mutual extrusion contacts the formation electrical connection for the elastic conductive projection 4 of chip for driving 1, like this, mechanical fixation between chip for driving 1 and the charged base board is finished with being electrically connected simultaneously, and strain takes place in the conductive particle 7 in the elastic conducting layer 6 in extrusion process, substitute the effect of the conductive particle that is captured in original ACF encapsulation process, guaranteed the reliability that is electrically connected between conductive projection 4 and the splicing ear.
The encapsulating structure of this chip for driving 1 that has an elastic conductive projection 4 compared with prior art, on the one hand, the number of the conductive particle 7 that is provided by elastic conducting layer 6 is more stable than the number of the conductive particle that is captured in the existing ACF encapsulation process, can artificially control again simultaneously, that therefore, has avoided that indivedual conductive projections 4 and splicing ear cause owing to the seizure conductive particle is very few is connected too high in resistance even opens circuit.On the other hand, owing between the adjacent conductive projection 4 and be full of the high molecular polymer that solidifies between the splicing ear, do not have the distribution of conductive particle, the occurrence probability of short circuit also can reduce greatly.Along with the progressively raising of present microelectronics Packaging density, the advantage of above-mentioned two aspects will be more obvious.
In one embodiment of this invention, the thickness of above-mentioned conductive layer 5 is not less than about 5 microns, and this is that the dust in air particle causes the decline of yield for fear of in the process of this chip for driving 1 of encapsulation.This point is to the application particular importance of aspects such as liquid crystal display packages, because if the height of conductive projection is too low, the glass particle that swims in airborne diameter and be several microns can cause mechanical damage or cause interconnected big resistance and not conducting chip.
In addition, with reference to the chip for driving that has elastic conductive projection 41 shown in Figure 1, in one embodiment of this invention, above-mentioned chip for driving 1 also comprises a projection bottom metal layers (not shown) between weld pad 3 and conductive projection 4, this projection bottom metal layers has the bonding strength that strengthens weld pad 3 and conductive projection 4, prevent the effect of the counterdiffusion mutually of weld pad 3 and conductive projection 4, its embodiment will be done detailed description in the manufacture method embodiment of back.
Fig. 2 to Fig. 4 is a profile, shows the method that a kind of manufacturing has the chip for driving of elastic conductive projection according to an embodiment of the invention.
Fig. 2 illustrates semiconductor chip 2, its inside is formed with the semiconductor integrated circuit (not shown), the surface is formed with the weld pad 3 that is used to make conductive projection, and this weld pad 3 is electrically connected with integrated circuit in the semiconductor chip 2, in order to input and output driving and function signal.
Then, at weld pad 3 surface depositions one conductive layer 5, as shown in Figure 3, the deposition of this conductive layer 5 is to form a metal level by electro-plating method, is not limited to electro-plating method certainly.In one embodiment of this invention, this deposition process can be divided into for two steps, promptly deposited one first kind of metal material 5a earlier, and this first kind of metal material 5a is by at least a metal of Au, Cu, Ni, Al or the alloy composition of these metals, the preferably Au of being selected from; Next deposit one second kind of metal material 5b, this second kind of metal material 5b is by at least a metal of Au, Cu, Al, Ni, Sn, Pb, Bi, Ag, In, Sb, Cd, Zn, Ga or the alloy composition of these metals of being selected from, and fusing point is lower than first kind of metal material 5a, preferably Sn or Au-Sn alloy.In one embodiment of this invention, the thickness of conductive layer 5 is not less than about 5 microns, and wherein, the preferred thickness of first kind of metal material 5a is 5 microns to 20 microns, and the preferred thickness of second kind of metal material 5b is 0.5 micron to 2 microns.
Next, form elastic conducting layer 6, as shown in Figure 4, had the chip for driving 1 of elastic conductive projection 4 thus according to an embodiment of the invention on conductive layer 5 surfaces.The formation of this elastic conducting layer 6 is that conductive particle 7 metallurgy are connected to this conductive layer 5; in an embodiment of the present invention; conductive particle 7 is the metallic particles or the resin particle of surface metallization; or the mixing of two kinds of particles; for making elastic conductive projection 4 have bigger regime of elastic deformation; satisfy the reliability requirement of encapsulating structure, the resin particle of conductive particle 7 preferred surface metallizings.The metal material of conductive particle 7 surface-coated according to one embodiment of the invention by at least a metal of Sn, Au, Cu, Pb, Bi, Ag, In, Al, Ni, Sb, Cd, Zn, Ga or the alloy composition of these metals of being selected from.From electric conductivity, preferably Au easily forms eutectic (eutectic) welding with Sn that forms second kind of metal material 5b or Au-Sn alloy.According to one embodiment of the invention, conductive layer 5 is connected by heating with the metallurgy of elastic conducting layer 6 to be finished, and according to Au-Sn eutectic phasor, preferred heating-up temperature is 278 ℃ to 320 ℃.Usually between 1 micron to 20 microns, preferred diameter is 3 microns to 5 microns to the diameter of conductive particle 7.Certainly, conductive layer 5 is connected with the metallurgy of elastic conducting layer 6 also and can finishes by heating and pressurization.
Fig. 5 to Figure 11 is a profile, shows the another kind of method of making the chip for driving that has elastic conductive projection according to an embodiment of the invention.
Fig. 5 illustrates semiconductor chip 2, its inside is formed with the semiconductor integrated circuit (not shown), the surface is formed with the weld pad 3 that is used to make conductive projection, and this weld pad 3 is electrically connected with integrated circuit in the semiconductor chip 2, in order to input and output driving and function signal.Weld pad 3 can be formed by the electric conducting material such as metal, and preferably, weld pad 3 is formed by Al or Cu.Protection semiconductor chip 2 and the passivation layer 8 that exposes weld pad 3 are formed on the semiconductor chip 2, are to realize weld pad 3 and extraneous electrically contacting, and preferably, passivation layer 8 has prodefined opening on the upper part of weld pad 3.The opening of passivation layer 8 can utilize mask to pass through photoengraving carving technology (photolithographic etching process) and form.
Then, as shown in Figure 6, on the semiconductor chip 2 that is formed with passivation layer 8, form projection bottom metal layers 9, and cover weld pad 3 exposed portions.Projection bottom metal layers 9 can be strengthened the bonding strength of Al or Cu weld pad 3 and conductive projection.In addition, projection bottom metal layers 9 can work in the counterdiffusion mutually between preventing weld pad 3 and conductive projection is interconnected.Therefore, preferably, projection bottom metal layers 9 and weld pad 3 and passivation layer 8 have well attached, thereby minimize the stress that affacts on the semiconductor chip 2 and be used as diffusion impervious layer.In addition, the low resistance between projection bottom metal layers 9 and the weld pad 3 is preferred.Therefore, in one embodiment of this invention, projection bottom metal layers 9 use Ti, Cr,, at least a formation among W, Ni, Au, Cu, TiW, NiV, Pd, Cr/Cu, TiW/Cu, TiW/Au, the NiV/Cu, preferably finish by sputter or evaporation.Yet, the invention is not restricted to this, projection bottom metal layers 9 can be made by various materials by various manufacturing process.
Then, as shown in Figure 7, non-conductive layer 10 is formed on the projection bottom metal layers 9.Any insulating material with following function can be used as non-conductive layer 10.Promptly, in the follow-up electroplating technology (referring to Fig. 9) that is used to form elastic conductive projection, flow to projection bottom metal layers 9 by block current flow, this insulating material prevents to be electroplated on all the other zones of the projection bottom metal layers 9 except the subregion that will form elastic conductive projection of projection bottom metal layers 9.Consider adhering to and the convenience of composition non-conductive layer 10 between non-conductive layer 10 and the projection bottom metal layers 9, preferably, photoresist is used as non-conductive layer 10.Non-conductive layer 10 can utilize chemical plating, sputter, evaporation, spin coating, roller coat (roll-coating), slit or slit mould (slit-orslot-die) or similarly method formation.The plus or minus photoresist can be used as non-conductive layer 10.After the deposition photoresist, photoresist solidifies in hot stove (hot plate) by soft baking process, thereby removes solvent.Utilize exposure source and its to go up the figuratum mask of formation, on the photoresist that has solidified, optionally carry out exposure technology.Then, by hard baking process, this photoresist in hot stove by hot curing, thereby distinguish light-struck zone and the non-irradiated zone of light.
With reference to Fig. 8, when after forming non-conductive layer 10 on the projection bottom metal layers 9, non-conductive layer 10 is by photoengraving carving technology composition.As a result, form non-conductive layer pattern 10a, define the zone that forms elastic conductive projection (with reference to the Reference numeral 4 of Figure 10) simultaneously.As shown in Figure 8, preferably, the elastic conductive projection zone is on weld pad 3.
With reference to Fig. 9 and 10, elastic conductive projection 4 is formed on projection bottom metal layers 9 zones of non-conductive layer pattern 10a exposure.At first, as shown in Figure 9, the formation of conductive layer 5 is to pass through to form a metal level on the non-conductive layer pattern 10a area exposed in projection bottom metal layers 9 by electro-plating method, is not limited to electro-plating method certainly.Here, according to one embodiment of the invention, the forming process of conductive layer 5 can be divided into for two steps again, promptly deposited one first kind of metal material 5a earlier, this first kind of metal material 5a is by at least a metal of Au, Cu, Ni, Al or the alloy composition of these metals, the preferably Au of being selected from; Next deposit one second kind of metal material 5b, this second kind of metal material 5b is by at least a metal of Au, Cu, Al, Ni, Sn, Pb, Bi, Ag, In, Sb, Cd, Zn, Ga or the alloy composition of these metals of being selected from, and fusing point is lower than first kind of metal material 5a, preferably Sn or Au-Sn alloy.In one embodiment of this invention, the thickness of conductive layer 5 is not less than about 5 microns, and wherein, the preferred thickness of first kind of metal material 5a is 5 microns to 20 microns, and the preferred thickness of second kind of metal material 5b is 0.5 micron to 2 microns.
Subsequently, as shown in figure 10, form elastic conducting layer 6 on conductive layer 5 surfaces.The formation of this elastic conducting layer 6 is that conductive particle 7 metallurgy are connected to this conductive layer 5; in an embodiment of the present invention; conductive particle 7 is the metallic particles or the resin particle of surface metallization; or the mixing of two kinds of particles; for making elastic conductive projection 4 have bigger regime of elastic deformation; satisfy the reliability requirement of encapsulating structure, preferably, conductive particle 7 is resin particles of surface metallization.The metal material of conductive particle 7 surface-coated according to one embodiment of the invention by at least a metal of Sn, Au, Cu, Pb, Bi, Ag, In, Al, Ni, Sb, Cd, Zn, Ga or the alloy composition of these metals of being selected from.From electric conductivity, preferred Au easily forms eutectic (eutectic) welding with Sn that forms second kind of metal material 5b or Au-Sn alloy.According to one embodiment of the invention, conductive layer 5 is connected by heating with the metallurgy of elastic conducting layer 6 to be finished, and according to Au-Sn eutectic phasor, preferred heating-up temperature is 278 ℃ to 320 ℃.Usually between 1 micron to 20 microns, preferred diameter is 3 microns to 5 microns to the diameter of conductive particle 7.Certainly, conductive layer 5 is connected with the metallurgy of elastic conducting layer 6 also and can finishes by heating and pressurization.
Then, as shown in figure 11, non-conductive layer pattern 10a removes by ashing and stripping technology.Projection bottom metal layers 9 is etched according to the shape of elastic conductive projection 4, is had the chip for driving 1 of elastic conductive projection 4 thus according to an embodiment of the invention.
Thereafter, semiconductor chip 2 is cut, thereby chip for driving 1 is divided into plurality of single chip for driving.Independent chip for driving utilization such as the methods such as COG or COF that obtained encapsulate, and need not to re-use ACF as interconnected medium.
Figure 12 is the profile of another kind of manufacture method of elastic conducting layer that has the chip for driving of elastic conductive projection according to an embodiment of the invention.At first, conductive particle 7 evenly is arranged on the surface of a planarizing substrate 11, substrate 11 needs harder quality and higher heat resisting temperature, preferred glass substrate or ceramic substrate.Semiconductor chip 2 back-offs that have been formed with conductive layer 5 on the weld pad 3 are arranged on the conductive particle 7, in heating, semiconductor chip 2 and substrate 11 are pressurizeed, thereby quicken the metallurgical formation that connects between conductive layer 5 and the conductive particle 7.Wherein, the scope of pressure should determine that the conductive particle 7 of pressurized is more according to the kind and the number of conductive particle 7, and pressure can be selected bigger, otherwise, then to reduce applied pressure.For metallic particles, institute's applied pressure should make most of conductive particle 7 that bigger plastic deformation does not take place, and for the resin particle of surface metallization, institute's applied pressure should can bear upper limit of pressure less than conductive particle 7 under the condition that surface metal-layer is not destroyed.Semiconductor chip 2 in the present embodiment can be uncut wafer, also can be the single chip after the cutting, preferably single chip.
Although provided description in the above-described embodiments, obviously, can be applicable to various chips according to the structure of the elastic conductive projection of the embodiment of the invention to the LCD device drive chip example.For example, according to the structure of elastic conductive projection of the present invention can be useful be applied on the chip relevant with the manufacturing of products such as flat-panel monitor, RFID, electronic tag.Usually, in the middle of present microelectronic, need that (Non-Conductive Film NCF) carries out interconnected various chips, all can obtain the improvement of interconnected performance by the structure according to the elastic conductive projection of the embodiment of the invention by ACF or non-conductive glued membrane.
The microelectronic element of elastic conductive projection that has according to the present invention is except that the application of chip field, can also be applied in the middle of multiple other circuit units, as printed circuit board (PCB) (PCB), flexible PCB (FPC), element pasted on surface (SMT Components), micro-electro-mechanical systems element (MEMS Components) etc.The elastic conductive projection that is arranged on these circuit units comprises a conductive layer and an elastic conducting layer, and wherein conductive layer is electrically connected with circuit on this circuit unit, and elastic conducting layer is connected with conductive layer is metallurgical.In one embodiment of this invention, described conductive layer is a metal level, by at least a metal of Sn, Au, Cu, Pb, Bi, Ag, In, Al, Ni, Sb, Cd, Zn, Ga or the alloy composition of these metals of being selected from, the overlay coating of preferred Cu and Cu, wherein, described overlay coating is by at least a composition the among Au, Ni/Au, Sn, Sn/Au or the Sn/Ag/Cu.In one embodiment of this invention, described conductive layer is a part that is used on the circuit unit with the pad of extraneous interconnection, or applies a coating in bond pad surface, with the material and the thickness basically identical of circuit on this circuit unit.
The above-mentioned manufacture process that is formed on the elastic conductive projection on the circuit unit is similar to the manufacture process example of the elastic conductive projection of previously described chip for driving, but the forming process of conductive layer can change according to the different of circuit unit with method, with the flexible PCB that is applied in the middle of the liquid crystal indicator is example, in the prior art field, flexible PCB need link to each other with the display panels assembly by ACF.The flexible PCB that has elastic conductive projection according to an embodiment of the invention can directly be bonded on the display panels assembly.The formation of the conductive layer of elastic conductive projection used the same method and same material formation according to the circuit while on one embodiment of the invention and flexible PCB surface on this flexible PCB, preferably by electroplating or rolling and finish.
The chip for driving that has elastic conductive projection according to various embodiments of the invention that Fig. 1 to 12 describes can be installed on the various structures according to various installation methods.For example, the method by COG directly is encapsulated in chip for driving on the glass substrate on charged road; Method by COF is encapsulated in chip for driving on the flexible PCB; And chip for driving is packaged on the general printed circuit board (PCB) by the method for COB.In these methods, only need common insulation viscose glue as interconnected medium between chip for driving and the various substrate, play support, the effect of bonding and protection.
Figure 13 has the schematic diagram that the chip for driving of elastic conductive projection is used according to an embodiment of the invention in encapsulating structure.Chip for driving 1 is got up by insulation viscose glue 14 bondings with charged base board 12, and wherein the splicing ear on the elastic conductive projection 4 on the chip for driving 1 and the charged base board 12 13 is staggered relatively and be electrically connected.In encapsulation process, insulation viscose glue 14 need be arranged between chip for driving 1 and the charged base board 12, and make elastic conductive projection 4 and corresponding splicing ear 13 is relative with it.In an embodiment of the present invention, insulation viscose glue 14 has thermosetting, and encapsulation process is by finishing 12 heating of chip for driving 1 and charged base board and pressurization.In an embodiment of the present invention, insulation viscose glue 14 has the light solidity, at this moment, and charged base board 12 preferably clear substrates.Encapsulation process is passed through chip for driving 1 and 12 pressurizations of charged base board, and carries out illumination through charged base board 12 and finish.In an embodiment of the present invention, insulation viscose glue 14 has the property of pressing solidly, and encapsulation process is by finishing chip for driving 1 and 12 pressurizations of charged base board.In an embodiment of the present invention, insulation viscose glue 14 can adopt banded viscose glue, preferred non-conductive glued membrane (Non-ConductiveFilm, NCF), in the encapsulation process, at first NCF is sticked on the charged base board 12, then chip for driving 1 and charged base board 12 are heated and pressurize.In an embodiment of the present invention, insulation viscose glue 14 can adopt the paste viscose glue, preferred non-conductive adhesive (cream) (Non-Conductive Paste, NCP), in the encapsulation process, at first NCP is sprayed on the charged base board 12, then chip for driving 1 and charged base board 12 is heated and pressurize.Use in encapsulating structure though described the chip for driving that has elastic conductive projection according to the present invention in the present embodiment, the invention is not restricted to this.Obviously, the encapsulation that has the various circuit units of elastic conductive projection according to the present invention can be used above-mentioned encapsulating structure equally.
Figure 14 is the schematic diagram of liquid crystal display device assembly, and wherein the form that encapsulates with COG and COF has been installed the chip for driving that has elastic conductive projection according to the embodiment of the invention.Display panels 15 of the present invention comprises infrabasal plate 16 and upper substrate 17, and the extension of infrabasal plate 16 has the transparency electrode 18 of indium tin oxide (ITO) formation, is used to connect the connecting circuit of external drive circuit and each pixel of display floater.Wherein, the chip for driving 1 that has elastic conductive projection 4 according to an embodiment of the invention utilizes the COG method directly to be encapsulated on the infrabasal plate 16 of display panels 15 by insulation viscose glue 14, and elastic conductive projection 4 and ito transparent electrode 18 are staggered relatively and be electrically connected.In addition, flexible circuit panel element 19 is installed also on the infrabasal plate 16, it comprises flexible membrane 20 and the splicing ear 21 that is formed on the flexible membrane 20.The chip for driving 1 that has elastic conductive projection 4 according to an embodiment of the invention utilizes the COF method to be encapsulated on the flexible circuit panel element 19 by insulation viscose glue 14, and elastic conductive projection 4 and splicing ear 21 are staggered relatively and be electrically connected.In an embodiment of the present invention, insulation viscose glue 14 has thermosetting, the preferred consolidation temperature is lower than the insulation viscose glue of the curing temperature of high molecular polymer among the present ACF, help like this to enhance productivity, can also reduce simultaneously liquid crystal indicator in manufacture process because the different warpages that cause of the thermal coefficient of expansion of different materials, the raising reliability.In an embodiment of the present invention, insulation viscose glue 14 has the light solidity, because infrabasal plate 16 and flexible circuit panel element 19 are own transparent, seeing through illumination solidifies insulation viscose glue 14, warpage in the liquid crystal indicator that can avoid causing owing to heating, in an embodiment of the present invention, insulation viscose glue 14 has the property of pressing solidly, encapsulation process is by to chip for driving 1 and infrabasal plate 16, or chip for driving 1 and 19 pressurizations of flexible circuit panel element can be finished.In an embodiment of the present invention, insulation viscose glue 14 can adopt banded viscose glue, preferred NCF, in the encapsulation process, at first NCF is sticked on infrabasal plate 16 or the flexible circuit panel element 19, then to chip for driving 1 and infrabasal plate 16, or chip for driving 1 and flexible circuit panel element 19 heat and pressurize.In an embodiment of the present invention, insulation viscose glue 14 can adopt the paste viscose glue, preferred NCP, in the encapsulation process, at first NCP is sprayed on infrabasal plate 16 or the flexible circuit panel element 19, then to chip for driving 1 and infrabasal plate 16, or chip for driving 1 and flexible circuit panel element 19 heat and pressurize.Though described in the present embodiment and wherein the display panels 15 of chip for driving 1 be installed, the invention is not restricted to this with the form of COG and COF encapsulation.Obviously, as shown in figure 14, flexible circuit panel element 19 is connected with display panels 15, can replace with the flexible PCB that has an elastic conductive projection according to the present invention being connected by above-mentioned method and display panels 15.
In a word, it will be appreciated by those skilled in the art that under the situation that does not depart from principle of the present invention, can make various changes and modifications preferred embodiment, therefore, disclosed the preferred embodiments of the present invention are only used on general and the meaning of describing, and are not used in the purpose of restriction.
As mentioned above, the microelectronic element that has elastic conductive projection according to the present invention need not to use anisotropic conductive film in encapsulation process, the gained encapsulating structure is compared with the encapsulating structure that uses anisotropic conductive film, has lower connection resistance, avoids short circuit to take place simultaneously.

Claims (16)

1; a kind of microelectronic element that has elastic conductive projection; comprise semiconductor chip and the conductive projection that is arranged on this semiconductor chip surface weld pad; it is characterized in that described conductive projection comprises a conductive layer and an elastic conducting layer; described conductive layer is electrically connected with described semiconductor chip surface weld pad; described elastic conducting layer is connected with described conductive layer is metallurgical; described elastic conducting layer is made up of conductive particle; described conductive particle is the metallic particles or the resin particle of surface metallization; or the mixing of two kinds of particles, between described semiconductor chip surface weld pad and the described conductive projection projection bottom metal layers is arranged.
2, according to the microelectronic element that has elastic conductive projection of claim 1, it is characterized in that described conductive layer is a metal level, by at least a metal of Au, Cu, Al, Ni, Sn, Pb, Bi, Ag, In, Sb, Cd, Zn, Ga or the alloy composition of these metals of being selected from.
3,, it is characterized in that the thickness of described conductive layer is not less than 5 microns according to the microelectronic element that has elastic conductive projection of claim 1.
4, a kind of encapsulating structure that comprises each the microelectronic element that has elastic conductive projection in the claim 1 to 3, it is characterized in that described microelectronic element that has an elastic conductive projection and charged base board bonding, the elastic conductive projection of microelectronic element is staggered relatively with the splicing ear of charged base board and be electrically connected.
5, a kind of liquid crystal indicator that comprises each the microelectronic element that has elastic conductive projection in the claim 1 to 3, it is characterized in that described microelectronic element that has an elastic conductive projection and display panels assembly bonding, the elastic conductive projection of microelectronic element is staggered relatively with the splicing ear of display panels assembly and be electrically connected.
6; a kind of encapsulating structure that comprises the microelectronic element that has elastic conductive projection; it is characterized in that the described microelectronic element that has elastic conductive projection comprises circuit unit and the conductive projection that is arranged on this circuit unit; described conductive projection comprises a conductive layer and an elastic conducting layer; described conductive layer is electrically connected with circuit on the described circuit unit; described elastic conducting layer is connected with described conductive layer is metallurgical; described elastic conducting layer is made up of conductive particle; described conductive particle is the metallic particles or the resin particle of surface metallization; or the mixing of two kinds of particles; described microelectronic element that has an elastic conductive projection and charged base board bonding, the elastic conductive projection of microelectronic element is staggered relatively with the splicing ear of charged base board and be electrically connected.
7,, it is characterized in that described conductive layer is a metal level, by at least a metal of Au, Cu, Al, Ni, Sn, Pb, Bi, Ag, In, Sb, Cd, Zn, Ga or the alloy composition of these metals of being selected from according to the encapsulating structure of claim 6.
8,, it is characterized in that the thickness of described conductive layer is not less than 5 microns according to the encapsulating structure of claim 6.
9, a kind of manufacture method that has the microelectronic element of elastic conductive projection is characterized in that may further comprise the steps:
(aa) provide the semiconductor chip, this semiconductor chip surface comprises a weld pad, forms a projection bottom metal layers on the weld pad of this semiconductor chip surface;
(bb) form a non-conductive layer on this projection bottom metal layers and semiconductor chip surface, and this non-conductive layer of patterning, to form at least one opening, this opening exposes this projection bottom metal layers;
(cc) in described opening, form a conductive layer;
(dd) on described conductive layer, form an elastic conducting layer, this elastic conducting layer is connected with this conductive layer is metallurgical, described elastic conducting layer is made up of conductive particle, and described conductive particle is the metallic particles or the resin particle of surface metallization, or the mixing of two kinds of particles;
(ee) remove described non-conductive layer, obtain the described microelectronic element that has elastic conductive projection.
10, according to the manufacture method of claim 9, the formation that it is characterized in that described conductive layer is to form a metal level by electro-plating method.
11,, it is characterized in that the formation of described conductive layer is divided into following two steps according to the manufacture method of claim 9:
(1) one first kind of metal material of deposition, this metal material is the metal of at least a Au of being selected from, Cu, Ni, Al or the alloy of these metals;
(2) one second kind of metal material of deposition, this metal material is the metal of at least a Au of being selected from, Cu, Al, Ni, Sn, Pb, Bi, Ag, In, Sb, Cd, Zn, Ga or the alloy of these metals, wherein, the fusing point of this second kind of metal material is lower than the fusing point of this first kind of metal material.
12, a kind of manufacture method that has the microelectronic element of elastic conductive projection is characterized in that may further comprise the steps:
(aaa) provide a circuit unit, deposit a conductive layer on this circuit unit surface, and this conductive layer is electrically connected with circuit on this circuit unit;
(bbb) form an elastic conducting layer on this conductive layer; this elastic conducting layer is connected with this conductive layer is metallurgical; obtain the described microelectronic element that has elastic conductive projection; described elastic conducting layer is made up of conductive particle; described conductive particle is the metallic particles or the resin particle of surface metallization, or the mixing of two kinds of particles.
13, according to the manufacture method of claim 12, the deposition that it is characterized in that described conductive layer be with circuit unit on circuit simultaneously, use the same method and same material forms.
14, according to the manufacture method of claim 12, the deposition that it is characterized in that described conductive layer is to utilize the metal of at least a Au of being selected from, Cu, Al, Ni, Sn, Pb, Bi, Ag, In, Sb, Cd, Zn, Ga or the alloy of these metals to form described conductive layer.
15, according to the manufacture method of claim 9 or 12, the formation that it is characterized in that described elastic conducting layer is that conductive particle metallurgy is connected to this conductive layer.
16,, it is characterized in that it is by adding thermosetting that described elastic conducting layer is connected with the metallurgy of conductive layer, or heating and pressurization form according to the manufacture method of claim 9 or 12.
CNB2007100370460A 2007-02-01 2007-02-01 Microelectronic element with elastic conductive projection and method of manufacture Expired - Fee Related CN100511661C (en)

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CN100511661C (en) * 2007-02-01 2009-07-08 上海交通大学 Microelectronic element with elastic conductive projection and method of manufacture
CN102237329B (en) * 2010-04-27 2013-08-21 瑞鼎科技股份有限公司 Chip structure, chip bonding structure and manufacturing methods for chip structure and chip bonding structure
CN102501460B (en) * 2011-10-31 2015-02-25 南通万德科技有限公司 Rubber conducting plate with multi-layer structure and conducting particles
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