CN209298122U - A kind of backlight semiconductor optoelectronic class chip - Google Patents
A kind of backlight semiconductor optoelectronic class chip Download PDFInfo
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- CN209298122U CN209298122U CN201822204173.1U CN201822204173U CN209298122U CN 209298122 U CN209298122 U CN 209298122U CN 201822204173 U CN201822204173 U CN 201822204173U CN 209298122 U CN209298122 U CN 209298122U
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- gasket
- chip
- hole
- back electrode
- lead
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Abstract
The utility model belongs to semiconductor optoelectronic class core field, and in particular to a kind of backlight semiconductor optoelectronic class chip, the backlight semiconductor optoelectronic class chip includes gasket, chip, back electrode, conductive silver glue and lead；Through-hole is equipped at gasket center；The layer gold of conducting is equipped with as lead frame in through-hole side wall and gasket side upper and lower surface；Chip will be adhered on gasket by resin glue and side wall application of resin glue；Back electrode is fixed on chip and towards through-hole；Conductive silver glue is poured in through-hole and solidifying and setting；Back electrode is transitioned on gasket or printed circuit board.Lead welds on the lead frames.The utility model structure is simple, back electrode is maked somebody a mere figurehead by preparing bridge formation gasket, back electrode is drawn using silver paste perfusion and cured mode again, finally signal acquisition is completed by the way of lead welding, realizes the interconnection of semiconductor light electrical chip single tube (array) and reading circuit.
Description
Technical field
The utility model belongs to semiconductor optoelectronic class core field, and in particular to a kind of backlight semiconductor optoelectronic class chip.
Technical background
To semiconductor optoelectronic class chip, to avoid interference of the signal electrode to chip entry/exit light (i.e. entering light or out light), drop
Low junction capacity, the form deviated from frequently with signal electrode and entry/exit light direction prepare chip electrode, i.e., so-called back electrode.Especially
It is for high speed class photodetector, array based semiconductor photoelectric chip, and back electrode scheme seems particularly necessary.
Usually there are two types of technological approaches, i.e. through-hole interconnection and upside-down mounting for array based semiconductor photoelectric chip and reading circuit interconnection
Weldering.Through-hole interconnection technology etching through hole by each unit, and passivation layer and gold are successively precipitated in unit positive electrode and hole inner wall
Belong to layer, hole bottom metal layer is connected with the indium column of reading circuit electrode by pressure welding mode, finally realizes each unit positive electricity
The interconnection of pole and corresponding circuits electrode.But there are following two technological difficulties for this technology: 1) being to be easy to implement via etch, passivation
The deposition of layer and metal layer, it usually needs array chip is thinned to 50~70 μ m-thicks, thickness deviation≤± 0.5 μm, and is guaranteed
Chip integrality and planarization；2) passivation layer of through-hole wall need to meet resistance to pressure request, drain conditions do not occur.Another kind is realized
Semiconductor light electrical chip and the technological approaches of reading circuit interconnection are flip chip bondings, it is using respectively in unit positive electrode and reading
Indium column is grown in circuit respective electrode, then the interconnection of unit positive electrode Yu reading circuit electrode is realized by way of pressure welding.Base
The mode that back entering light is realized in flip-chip interconnection is the mainstream working method of current laser focal plane detector, but technology presence is set
The problems such as standby dependence is strong, higher cost.
Utility model content
(1) technical problems to be solved
Technical problem to be solved by the utility model is: back entering light is realized in existing semiconductor optoelectronic class flip-chip interconnection
Mode device dependence is strong, higher cost.
(2) technical solution
In order to solve the above technical problems, the utility model provides a kind of backlight semiconductor optoelectronic class chip.
A kind of backlight semiconductor optoelectronic class chip, including gasket, chip, back electrode, conductive silver glue and lead；
Through-hole is equipped at gasket center；It is used as and draws in the layer gold that through-hole side wall and gasket side upper and lower surface are equipped with conducting
Wire frame；
Chip will be adhered on gasket by resin glue and side wall application of resin glue；
Back electrode is fixed on chip and towards through-hole；
Conductive silver glue is poured in through-hole and solidifying and setting；
Lead welds on the lead frames.
Further, described 3~7 μm of 3 thickness of layer gold.
Further, the resin glue 4 is epoxide-resin glue.
Further, the gasket size is 2mm × 2mm × 0.2mm, 150 μm of 2 diameter of through-hole.
(3) beneficial effect
Compared with prior art, the utility model have it is following the utility model has the advantages that
The utility model structure is simple, and bridge formation gasket makes somebody a mere figurehead back electrode, will be carried on the back using silver paste perfusion and cured mode
Electrode is drawn, and finally completes signal acquisition by the way of lead welding, is realized semiconductor light electrical chip single tube (array) and is read
The interconnection of circuit out.
Detailed description of the invention
Fig. 1 is backlight semiconductor optoelectronic class chip schematic diagram；
Fig. 2 is preparation backlight semiconductor optoelectronic class chip processes schematic diagram.
Specific embodiment
To keep the purpose of this utility model, content and advantage clearer, with reference to the accompanying drawings and examples, to this reality
It is described in further detail with novel specific embodiment.
Embodiment 1
A kind of backlight semiconductor optoelectronic class chip, as shown in Figure 1, including gasket 1, chip 5, back electrode 6, conductive silver glue 7
With lead 8；
Through-hole 2 is equipped at 1 center of gasket；The layer gold 3 of conducting is equipped in 2 side wall of through-hole and 1 side upper and lower surface of gasket
As lead frame；Described 3~7 μm of 3 thickness of layer gold.
Chip 5 will be adhered on gasket 1 by resin glue 4 (such as epoxide-resin glue) and side wall application of resin glue 4；
Back electrode 6 is fixed on chip 5 and towards through-hole 2；
Conductive silver glue 7 is poured in through-hole 2 and solidifying and setting；
Lead 8 welds on the lead frames.
Embodiment 2
It is below 0.5mm × 0.5mm × 0.4mm with size, the APD that back electrode is 100 μm of diameter carries on the back two pole of entering light photoelectricity
Pipe single tube further illustrates the utility model.
A kind of interconnecting method of backlight semiconductor optoelectronic class chip, steps are as follows:
S1, makes the gasket 1 of a bridge-type, and 1 size of gasket is 2mm × 2mm × 0.2mm；The system at gasket center
Standby through-hole 2,150 μm of 2 diameter of through-hole are made in the layer gold 3 of 2 side wall of through-hole and 1 side upper and lower surface of gasket preparation mutual conduction
For lead frame, 3~7 μm of 3 thickness of layer gold, as shown in Fig. 2 (a).
S2, by the way that chip 5 is adhered on gasket 1 with the DG-4 epoxide-resin glue 4 of middle blue morning twilight, back electrode 6 is towards pad
Piece through-hole 2 simultaneously keeps certain concentricity, and prevents the silver paste in next step process from leaking into core in side wall coating epoxide-resin glue 4
5 side of piece, after solidification as shown in Fig. 2 (b).
The gasket 1 of bonding chip 5 is inverted by S3, is perfused to solidify at 7,150~179 DEG C of conductive silver glue in through-hole 2 and be determined
Type 3~4 hours；In solidification process front half section, 7 mobility of conductive silver paste can be dramatically increased, 6 He of back electrode under the characteristic effect
Through-hole side wall layer gold 3 is connected to by conductive silver paste 7, and is finally completed solidifying and setting, as shown in Fig. 2 (c), (d).
Back electrode 6 is transitioned into gasket or printing electricity by way of the welding lead 8 on the lead frame of gasket front by S4
On the plate of road, as shown in Fig. 2 (e).
In step S4, back electrode 6 can also be transitioned into gasket by way of planting ball on the lead frame of gasket front
Or on printed circuit board.
The above is only the preferred embodiment of the utility model, it is noted that for the common skill of the art
For art personnel, without deviating from the technical principle of the utility model, several improvement and deformations can also be made, these change
It also should be regarded as the protection scope of the utility model into deformation.
Claims (4)
1. a kind of backlight semiconductor optoelectronic class chip, which is characterized in that including gasket (1), chip (5), back electrode (6), conduction
Elargol (7) and lead (8)；
Through-hole (2) are equipped at gasket (1) center；The gold of conducting is equipped in through-hole (2) side wall and gasket (1) side upper and lower surface
Layer (3) is used as lead frame；
Chip (5) is adhered on gasket (1) by resin glue (4) and side wall application of resin glue (4)；
Back electrode (6) is fixed on chip (5) and towards through-hole (2)；
Conductive silver glue (7) is poured in through-hole (2) and solidifying and setting；
Lead (8) welds on the lead frames.
2. backlight semiconductor optoelectronic class chip according to claim 1, which is characterized in that 3~7 μm of thickness of the layer gold (3).
3. backlight semiconductor optoelectronic class chip according to claim 1, which is characterized in that the resin glue (4) is asphalt mixtures modified by epoxy resin
Rouge glue.
4. backlight semiconductor optoelectronic class chip according to claim 1, which is characterized in that gasket (1) size be 2mm ×
2mm × 0.2mm, 150 μm of diameter of through-hole (2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822204173.1U CN209298122U (en) | 2018-12-26 | 2018-12-26 | A kind of backlight semiconductor optoelectronic class chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822204173.1U CN209298122U (en) | 2018-12-26 | 2018-12-26 | A kind of backlight semiconductor optoelectronic class chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209298122U true CN209298122U (en) | 2019-08-23 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201822204173.1U Active CN209298122U (en) | 2018-12-26 | 2018-12-26 | A kind of backlight semiconductor optoelectronic class chip |
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| CN (1) | CN209298122U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109599445A (en) * | 2018-12-26 | 2019-04-09 | 西南技术物理研究所 | A kind of backlight semiconductor optoelectronic class chip and its interconnecting method |
-
2018
- 2018-12-26 CN CN201822204173.1U patent/CN209298122U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109599445A (en) * | 2018-12-26 | 2019-04-09 | 西南技术物理研究所 | A kind of backlight semiconductor optoelectronic class chip and its interconnecting method |
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