CN108809087B - The quasi- source the Z DC-DC converter of active switch capacitor and passive switch inductance mixed - Google Patents

The quasi- source the Z DC-DC converter of active switch capacitor and passive switch inductance mixed Download PDF

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Publication number
CN108809087B
CN108809087B CN201810563492.3A CN201810563492A CN108809087B CN 108809087 B CN108809087 B CN 108809087B CN 201810563492 A CN201810563492 A CN 201810563492A CN 108809087 B CN108809087 B CN 108809087B
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diode
inductance
capacitor
source
output
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CN108809087A (en
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陈艳峰
刘明杰
张波
丘东元
黄子田
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DONGGUAN SHILONG FUHUA ELECTRONICS Co Ltd
South China University of Technology SCUT
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DONGGUAN SHILONG FUHUA ELECTRONICS Co Ltd
South China University of Technology SCUT
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0003—Details of control, feedback or regulation circuits
    • H02M1/0032—Control circuits allowing low power mode operation, e.g. in standby mode
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)

Abstract

The invention discloses the quasi- source the Z DC-DC converters of a kind of active switch capacitor and passive switch inductance mixed, including voltage source, first inductance, the active switch capacitor unit being made of first diode, the first metal-oxide-semiconductor, first capacitor, the passive switch inductance unit being made of the second diode, third diode, the second inductance, output mos pipe, output diode, output filter capacitor and output loading.High gain characteristics, active switch capacitor and the passive switch inductance characteristic in the comprehensive quasi- source Z of the present invention, compared with 3-Z source network boost DC-DC converter, inductance quantity is two few, capacitor quantity is the same, number of diodes is 5 few, and metal-oxide-semiconductor quantity is one more, but voltage gain is obviously improved；Compared with expansible diode assists the source Z boost DC-DC converter (first order extension), voltage gain is identical, and inductance quantity and capacitor quantity reduce by one and two respectively, and number of diodes is identical, metal-oxide-semiconductor quantity is one more, realizes higher output voltage gain with more low duty ratio.

Description

The quasi- source the Z DC-DC converter of active switch capacitor and passive switch inductance mixed
Technical field
The present invention relates to the technical field of power electronics, refers in particular to a kind of active switch capacitor and passive switch inductance is mixed The quasi- source the Z DC-DC converter closed.
Background technique
The source Z DC-DC converter has accessed the LC impedance network of an X-shaped between input source and output end, has both boosting With the peculiar property of decompression, and due to its compared under low duty ratio compared with boost converter have higher voltage gain so that It is widely used in fuel cell power generation and photovoltaic power generation.That there is source currents is discontinuous for the traditional source Z DC-DC converter With input and output not altogether the defects of, the quasi- source Z DC-DC converter proposed in recent years has well solved both of these problems, and Quite high voltage gain can be obtained by the cascade of multistage quasi- Z source impedance network.However, the cascade in the multistage quasi- source Z is therewith The quantity of the passive devices such as inductance, capacitor is increased, so that the volume of circuit, weight and cost greatly increase, limits the electricity Application of the road in the low consumption circuit using system bulk, weight and cost as limiting factor.
Summary of the invention
The purpose of the present invention is to overcome the shortcomings of the existing technology with it is insufficient, propose a kind of active switch capacitor and passive The quasi- source the Z DC-DC converter of switched inductors mixing, combines high gain characteristics, active switch capacitor and the passive switch in the quasi- source Z Inductance characteristic considerably reduces the quantity of passive device, realizes higher output voltage gain with more low duty ratio, with Circuit volume, weight and cost are in the low consumption circuit application of key constraints with apparent advantage, thus apply model It encloses wider；Starting shock problem is not present in continuous input current and circuit.
To achieve the above object, technical solution provided by the present invention are as follows: active switch capacitor and passive switch inductance are mixed The quasi- source the Z DC-DC converter closed, including it is voltage source, the first inductance, active switch capacitor unit, passive switch inductance unit, defeated Metal-oxide-semiconductor, output diode, output filter capacitor and output loading out；The active switch capacitor unit is by first diode, One metal-oxide-semiconductor, first capacitor are constituted；The passive switch inductance unit is by the second diode, third diode, the second inductance structure At；The voltage source anode connect with one end of the first inductance, the other end of first inductance respectively with first diode Anode and the first metal-oxide-semiconductor drain electrode connection, the cathode of the first diode respectively with the anode of first capacitor, output mos The drain electrode of pipe is connected with the anode of output diode；The cathode of the output diode respectively with output filter capacitor anode and One end of output loading connects, the source electrode of first metal-oxide-semiconductor respectively with the anode of the second diode, the second inductance one end and The cathode of first capacitor connects, and the cathode of second diode connects with the cathode of the cathode of third diode and voltage source respectively Connect, the anode of the third diode respectively with the other end of the second inductance, the source electrode of output mos pipe, output filter capacitor Cathode is connected with the other end of output loading.
Compared with prior art, the present invention have the following advantages that with the utility model has the advantages that
Compared with 3-Z source network boost DC-DC converter, inductance quantity used is two few, capacitor quantity one used Sample, number of diodes used is 5 few, and metal-oxide-semiconductor quantity used is one more, but voltage gain is obviously improved；With expansible two The pole pipe auxiliary source Z boost DC-DC converter (first order extension) is compared, and voltage gain is identical, but inductance quantity and capacitor quantity Reduce one and two respectively, number of diodes used is identical, and metal-oxide-semiconductor quantity used is one more, thus greatly subtracts Lacked the quantity of passive device, higher output voltage gain realized with more low duty ratio, with circuit volume, weight and at This is in the low consumption circuit application of key constraints with apparent advantage, thus application range is wider；Input current connects There is no starting shock problems for continuous and circuit.
Detailed description of the invention
Fig. 1 is the quasi- source the Z DC-DC converter circuit figure of active switch capacitor and passive switch inductance mixed of the invention.
Fig. 2 a, Fig. 2 b are the quasi- source the Z DC-DC transformation of active switch capacitor and passive switch inductance mixed of the invention respectively Equivalent circuit diagram of the device when two metal-oxide-semiconductor is opened and simultaneously switched off simultaneously.
Fig. 3 a is the sensitizing factor curve and the quasi- source the Z DC-DC converter of switched inductors, 3-Z source network liter of circuit of the present invention DC-DC converter, the embedded quasi- source the Z DC-DC converter based on active switch capacitor structure, quasi- boost switching DC-DC is pressed to become The liter of parallel operation, the expansible diode auxiliary source Z boost DC-DC converter (first order extension) and traditional quasi- source Z DC-DC converter Pressure factor curve compares figure.
Fig. 3 b is with VinCircuit correlated variables of the present invention is given for=20V, metal-oxide-semiconductor conducting dutycycle D=0.35 Simulation result diagram.
Specific embodiment
The present invention is further explained in the light of specific embodiments.
As shown in Figure 1, the quasi- source the Z DC-DC of active switch capacitor provided by the present embodiment and passive switch inductance mixed Converter, including voltage source Vin, the first inductance L1, active switch capacitor unit, passive switch inductance unit, output mos pipe S2、 Output diode DO, output filter capacitor COWith output loading R；The active switch capacitor unit is by first diode D1, first Metal-oxide-semiconductor S1, first capacitor C1It constitutes；The passive switch inductance unit is by the second diode D2, third diode D3, second electricity Feel L2It constitutes；The voltage source VinAnode with the first inductance L1One end connection, the first inductance L1The other end respectively with First diode D1Anode and the first metal-oxide-semiconductor S1Drain electrode connection, the first diode D1Cathode respectively with first capacitor C1Anode, output mos pipe S2Drain electrode and output diode DOAnode connection；The output diode DOCathode difference With output filter capacitor COAnode connected with one end of output loading R, the first metal-oxide-semiconductor S1Source electrode respectively with the two or two Pole pipe D2Anode, the second inductance L2One end and first capacitor C1Cathode connection, the second diode D2Cathode difference With third diode D3Cathode and voltage source VinCathode connection, the third diode D3Anode respectively with the second inductance L2The other end, output mos pipe S2Source electrode, output filter capacitor COCathode connected with the other end of output loading R.
As two metal-oxide-semiconductor S1,S2When simultaneously turning on, the third diode D3Conducting, first diode D1, the two or two pole Pipe D2With output diode DOIt is turned off.Circuit forms two circuits, is respectively: voltage source VinConnect first capacitor C1It gives together First inductance L1Energy storage, forming circuit；First capacitor C1To the second inductance L2Energy storage, forming circuit.As two metal-oxide-semiconductor S1,S2Together When turning off, third diode D3Shutdown, first diode D1, the second diode D2With output diode DOIt is both turned on.Circuit shape At two circuits, it is respectively: voltage source VinWith the first inductance L1First capacitor C is given in series connection together1Charging, forming circuit；First Capacitor C1With the second inductance L2Series connection passes through output diode D togetherOPowering load, forming circuit；Integrated circuit input current Continuously, compared with 3-Z source network boost DC-DC converter, inductance quantity used is two few, and capacitor quantity used is the same, Number of diodes used is 5 few, and metal-oxide-semiconductor quantity used is one more, but voltage gain is obviously improved；With expansible diode The auxiliary source Z boost DC-DC converter (first order extension) is compared, and voltage gain is identical, but inductance quantity and capacitor quantity difference Reduce one and two, number of diodes used is identical, and metal-oxide-semiconductor quantity used is one more, thus considerably reduces System bulk, weight and cost；And there is no starting shock problems for circuit.
Fig. 2 a, Fig. 2 b give the process chart of circuit of the present invention.Fig. 2 a, Fig. 2 b are two metal-oxide-semiconductor (S respectively1,S2) Equivalent circuit diagram when simultaneously turning on and simultaneously turning off.The part for having electric current to flow through in solid line indication circuit in figure, dotted line indicate The part that no current flows through in circuit.
In conjunction with Fig. 2 a, Fig. 2 b, the quasi- source the Z DC-DC of the above-mentioned active switch capacitor of the present embodiment and passive switch inductance mixed The course of work of converter is as follows:
Stage 1, such as Fig. 2 a: as two metal-oxide-semiconductor S1,S2When simultaneously turning on, third diode D3Conducting, first diode D1、 Second diode D2With output diode DOIt is turned off.Circuit forms two circuits, is respectively: voltage source VinSeries connection first capacitor C1The first inductance L is given together1Energy storage, forming circuit；First capacitor C1To the second inductance L2Energy storage, forming circuit.
Stage 2, such as Fig. 2 b: as two metal-oxide-semiconductor S1,S2When simultaneously turning off, third diode D3Shutdown, first diode D1、 Second diode D2With output diode DOIt is both turned on.Circuit forms two circuits, is respectively: voltage source VinWith the first inductance L1 First capacitor C is given in series connection together1Charging, forming circuit；First capacitor C1With the second inductance L2Series connection passes through output diode together DOPowering load, forming circuit.
To sum up situation, two metal-oxide-semiconductor S1,S2It simultaneously turns on and turns off.In one switch periods, if metal-oxide-semiconductor S1,S2Lead Logical duty ratio is D, if the first inductance L1With the second inductance L2The voltage at both ends is respectively VL1And VL2If first capacitor C1Both ends Voltage is respectively VC1, obtain the derivation process of following voltage gain.
Stage 1: as two metal-oxide-semiconductor S1,S2During simultaneously turning on, corresponding equivalent circuit diagram such as Fig. 2 a, therefore have following public affairs Formula:
VL1=Vin+VC1 (1)
VL2=VC1 (2)
Two metal-oxide-semiconductor S1,S2Simultaneously turning on the time is DTS。
Stage 2: as two metal-oxide-semiconductor S1,S2During simultaneously turning off, corresponding equivalent circuit diagram such as Fig. 2 b, therefore have following public affairs Formula:
VL1=Vin-VC1 (3)
VL2=VC1-Vo (4)
Two metal-oxide-semiconductor S1,S2Simultaneously turning off the time is (1-D) TS。
By analyzing above, according to the volt-second characteristic of inductance, to the first inductance L1With the second inductance L2Apply inductance weber respectively Equilibrium principle has,
D(Vin+VC1)+(1-D)(Vin-VC1)=0 (5)
D(VC1)+(1-D)(VC1-Vo)=0 (6)
To sum up, joint type (5) and formula (6) can obtain first capacitor C1Voltage VC1With output loading voltage VOWith voltage source VinBetween relational expression are as follows:
Then output voltage gain (Output voltage gain) G of circuit of the present invention are as follows:
By formula (9) it is found that the quasi- source the Z DC-DC converter of active switch capacitor and passive switch inductance mixed of the invention Output voltage gain beBy output voltage gain expression formula it is found that the range of output voltage gain be 0~ ∞.Compared with 3-Z source network boost DC-DC converter, inductance quantity used is two few, and capacitor quantity used is the same, institute Number of diodes is 5 few, and metal-oxide-semiconductor quantity used is one more, but voltage gain is obviously improved；It is auxiliary with expansible diode The source Z boost DC-DC converter (first order extension) is helped to compare, voltage gain is identical, but inductance quantity and capacitor quantity subtract respectively One and two are lacked, number of diodes used is identical, and metal-oxide-semiconductor quantity used is one more, thus considerably reduces nothing The quantity of source device considerably reduces the volume, weight and cost of system.
Fig. 3 a is the sensitizing factor curve and the quasi- source the Z DC-DC converter of switched inductors, 3-Z source network liter of circuit of the present invention DC-DC converter, the embedded quasi- source the Z DC-DC converter based on active switch capacitor structure, quasi- boost switching DC-DC is pressed to become The liter of parallel operation, the expansible diode auxiliary source Z boost DC-DC converter (first order extension) and traditional quasi- source Z DC-DC converter Pressure factor curve compares figure.It include the sensitizing factor curve of circuit of the present invention in figure, the quasi- source the Z DC-DC converter of switched inductors Sensitizing factor curve, the sensitizing factor curve of 3-Z source network boost DC-DC converter, based on the embedding of active switch capacitor structure Enter the sensitizing factor curve of the quasi- source the Z DC-DC converter of formula, the sensitizing factor curve of quasi- boost switching DC-DC converter is expansible Diode assists the sensitizing factor curve of the source Z boost DC-DC converter (first order extension), traditional quasi- source Z DC-DC converter Sensitizing factor curve.As seen from the figure, the output voltage gain of circuit of the present invention is apparently higher than the transformation of 3-Z source network boost DC-DC The output voltage gain of device, quasi- boost switching DC-DC converter and traditional quasi- source Z DC-DC converter, it is auxiliary with expansible diode Help the output voltage gain of the source Z boost DC-DC converter (first order extension) identical.The duty ratio of circuit of the present invention does not exceed 0.5, adjustable extent is wider.
Fig. 3 b is circuit of the present invention in ViCorrelated variables in the case where=20V, metal-oxide-semiconductor conducting dutycycle D=0.35 Simulation result.When D=0.35, output voltage gain G=5.128, output voltage VO=G*Vin=102.56V, first capacitor electricity Press VC1=66.7V, first diode D1Both end voltage VD1=66.7V, third diode D3Both end voltage VD3=35.9V, output Diode DOBoth end voltage VDO=102.56V.Circuit waveform in Fig. 3 b is from top to bottom successively are as follows: metal-oxide-semiconductor S1,S2Gate pole letter Number VGS1、VGS2Waveform, output voltage VOWaveform, the first inductive current iL1Waveform, first capacitor voltage VC1Waveform, One diode voltage VD1Waveform, the second inductive current iL2Waveform, third diode voltage VD3Waveform and output diode Voltage VDOWaveform.
Embodiment described above is only the preferred embodiments of the invention, and but not intended to limit the scope of the present invention, therefore All shapes according to the present invention change made by principle, should all be included within the scope of protection of the present invention.

Claims (1)

1. the quasi- source the Z DC-DC converter of active switch capacitor and passive switch inductance mixed, which is characterized in that including voltage source (Vin), the first inductance (L1), active switch capacitor unit, passive switch inductance unit, output mos pipe (S2), output diode (DO), output filter capacitor (CO) and output loading (R)；The active switch capacitor unit is by first diode (D1), first Metal-oxide-semiconductor (S1), first capacitor (C1) constitute；The passive switch inductance unit is by the second diode (D2), third diode (D3), the second inductance (L2) constitute；Voltage source (the Vin) anode with the first inductance (L1) one end connection, it is described first electricity Feel (L1) the other end respectively with first diode (D1) anode and the first metal-oxide-semiconductor (S1) drain electrode connection, the one or two pole Manage (D1) cathode respectively with first capacitor (C1) anode, output mos pipe (S2) drain electrode and output diode (DO) anode Connection；Output diode (the DO) cathode respectively with output filter capacitor (CO) anode and output loading (R) one end connect It connects, the first metal-oxide-semiconductor (S1) source electrode respectively with the second diode (D2) anode, the second inductance (L2) one end and first Capacitor (C1) cathode connection, the second diode (D2) cathode respectively with third diode (D3) cathode and voltage source (Vin) cathode connection, the third diode (D3) anode respectively with the second inductance (L2) the other end, output mos pipe (S2) source electrode, output filter capacitor (CO) cathode connected with the other end of output loading (R).
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CN111431399B (en) * 2020-04-30 2023-06-02 三峡大学 Scalable Cuk DC-DC converter
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CN105978322B (en) * 2016-06-29 2018-09-14 华南理工大学 A kind of quasi- sources Z DC-DC converter of switching capacity type high-gain
CN105939107B (en) * 2016-06-30 2018-09-14 华南理工大学 A kind of quasi- boost switching DC-DC converter of mixed type
CN208299689U (en) * 2018-06-04 2018-12-28 华南理工大学 The quasi- source the Z DC-DC converter of active switch capacitor and passive switch inductance mixed

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