CN108807352A - A kind of New LED filament manufacturing technology - Google Patents
A kind of New LED filament manufacturing technology Download PDFInfo
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- CN108807352A CN108807352A CN201710333795.1A CN201710333795A CN108807352A CN 108807352 A CN108807352 A CN 108807352A CN 201710333795 A CN201710333795 A CN 201710333795A CN 108807352 A CN108807352 A CN 108807352A
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- substrate
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- hole
- tin cream
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- 238000005516 engineering process Methods 0.000 title claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 121
- 238000009413 insulation Methods 0.000 claims abstract description 35
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 30
- 239000006071 cream Substances 0.000 claims abstract description 28
- 239000011248 coating agent Substances 0.000 claims abstract description 20
- 238000000576 coating method Methods 0.000 claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 16
- 238000003466 welding Methods 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 8
- 239000004568 cement Substances 0.000 claims abstract description 6
- 238000004070 electrodeposition Methods 0.000 claims abstract description 3
- 239000003292 glue Substances 0.000 claims description 33
- 229910052718 tin Inorganic materials 0.000 claims description 27
- 239000011135 tin Substances 0.000 claims description 27
- 239000004593 Epoxy Substances 0.000 claims description 8
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 239000000853 adhesive Substances 0.000 claims description 7
- 230000001070 adhesive effect Effects 0.000 claims description 7
- 238000005260 corrosion Methods 0.000 claims description 7
- 230000007797 corrosion Effects 0.000 claims description 7
- 239000000741 silica gel Substances 0.000 claims description 7
- 229910002027 silica gel Inorganic materials 0.000 claims description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- 238000005520 cutting process Methods 0.000 claims description 5
- 239000002253 acid Substances 0.000 claims description 4
- 238000005553 drilling Methods 0.000 claims description 4
- 230000000694 effects Effects 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 4
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 4
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 4
- 239000011148 porous material Substances 0.000 claims description 4
- 238000007711 solidification Methods 0.000 claims description 4
- 230000008023 solidification Effects 0.000 claims description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 238000009835 boiling Methods 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000005538 encapsulation Methods 0.000 claims description 3
- 229920006335 epoxy glue Polymers 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 239000011133 lead Substances 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims description 2
- 229920005989 resin Polymers 0.000 claims description 2
- 239000011347 resin Substances 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 abstract description 4
- 238000003698 laser cutting Methods 0.000 abstract description 4
- 230000003628 erosive effect Effects 0.000 abstract description 3
- 239000000126 substance Substances 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 239000002390 adhesive tape Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 244000247747 Coptis groenlandica Species 0.000 description 1
- 235000002991 Coptis groenlandica Nutrition 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Led Device Packages (AREA)
Abstract
The present invention provides a kind of New LED filament manufacturing technologies, tin cream technology is bitten in particular by special substrate combination is pre-processed, substrate contact LED chip kept man of a noblewoman is first coated into insulating cement, then the P/N electrode positions for substrate being corresponded to chip get through hole using laser, by chip electrode facing towards coating insulating cement real estate, chip electrode is corresponded to through-hole to place, method is bitten using the through-hole use on substrate, and tin cream is bitten into chip electrode face, heating welding chip electrode is connected with substrate, the metal erosion that substrate is finally corresponded to the electrode intermediate insulation rivers chip P/N part by chemical attack or laser cutting again is fallen, chip electrode face forms tin cream with substrate and welds access, while properties of product are promoted, production efficiency greatly improves, production cost is greatly reduced.
Description
Technical field
It is the present invention relates to a kind of New LED filament manufacturing technology, more particularly to a kind of to be combined using the special substrate of pretreatment
Tin cream technology is bitten, the P/N electrode positions that substrate is corresponded to chip get through hole using laser, and chip electrode is exhausted facing towards coating
Chip electrode is corresponded to through-hole and placed by the real estate of edge glue, and routing, high-efficiency and low-cost system are not needed using conventional positive cartridge chip
Make LED filament.
LED filament is quickly grown recent years, and market capacity rapid growth, the main manufacturing technology of LED filament is main at present
It is divided into two major class, one kind is using the positive cartridge chip cooperation substrates (glass, sapphire substrate, ceramic substrate, metal substrate) of LED
Die bond, routing, molding sealing technology, one kind be using flip LED chips cooperation substrate (PCB, FPC, printed circuit ceramic base
Plate, glass substrate etc.) die bond, tin cream Reflow Soldering, molding sealing technology.
Filament technology using formal dress chip manufacturing is the mainstream technology of current LED filament industry, due to LED bonders,
The price of bonding equipment is more expensive, causes equipment depreciation cost higher, and positive cartridge chip is tied using the sapphire face paste dress of LED chip
Close substrate causes chip cooling performance poor due to the low thermal conductivity of the Sapphire Substrate of LED chip.
Flip-chip makes LED filament, with PCB, FPC, the ceramic substrate of printed circuit, glass substrate etc. for substrate,
The pad , And of connection line and welding dress flip LED chips that needs are printed on substrate are etched.Etching circuit
Flip LED chips are pasted on substrate, cross Reflow Soldering solidification.It is molded sealing, coating fluorescent powder, then heating cure.Advantage is can
To save wire bonder equipment investment, led simultaneously because the P/N electrode surfaces of LED chip are connect by tin cream welding with substrate circuit
Logical, chip cooling is preferable, the disadvantage is that flip-chip price is higher than 15% or more positive cartridge chip, in addition for 10*30mil or less cores
Piece, when carrying out tin cream welding, be easy to cause solder shorts between chip P/N electrodes since chip size is too small.
Invention content summation
The present invention provides a kind of New LED filament manufacturing technologies, are bitten in particular by special substrate combination is pre-processed
Substrate contact LED chip kept man of a noblewoman is first coated insulating cement, then substrate is corresponded to the P/N electricity of chip using laser by tin cream technology
Hole is got through in pole, after chip electrode face is installed to corresponding position, bites method using the through-hole use on substrate and bites tin cream
To chip electrode face, while tin cream is filled up completely substrate through-hole, and heating welding chip electrode is connected with substrate, finally passes through again
The metal erosion that substrate is corresponded to the electrode intermediate insulation rivers chip P/N part by chemical attack or laser cutting is fallen.Including following
Step：
Step 1: substrate pre-processes：By metal substrate 6. (conductive metals such as copper, aluminium, iron, tin, lead or other conduction materials
Material) etc. a kind of substrate as filament encapsulation, it is micro- to be coated 1--1000 the one side of substrate by 10--1000 micron of substrate thickness
The thick insulation transparent glue of rice is 4. (PTFE, epoxy crystal-bonding adhesive, transparent silica gel etc.)；
Step 2: laser boring：By pretreated substrate use laser-beam drilling machine, according to chip electrode (poles P) 1., core
5. 7., 8. (through hole), pore diameter range are plate electrode (poles N) for corresponding position progress laser boringMicron, laser is from base
4. plate coating insulation transparent glue is injected on one side；
Step 3: chip die bond：4. on one side by chip electrode face counterpart substrate coating insulation transparent glue, according to the two of chip
1., 5. 7., 8. a electrode aligns two through holes respectively, entire substrate places chip in corresponding position, and chip, which is put, to be finished
Afterwards, substrate coating insulation transparent glue one is flat on smooth workbench and is fixed down；
Step 4: tin cream is bitten：In the uncoated insulation transparent glue one side scraper of substrate, tin cream is bitten, is passed through
Through-hole on substrate 7., 8. bite substrate coating insulation transparent glue surface chip counter electrode 1., 5. on；
Step 5: electrode welding：Electric boiling plate is covered in the uncoated insulation transparent glue one side of substrate after the completion of biting, is led to
230 degree positive and negative 5 degree are electrically heated to, or the substrate for biting completion is put into electrocaloric effect and is heated to 230 degree positive and negative 5 degree；
Step 6: insulating tape makes：The substrate two sides that electrode welding is completed coats a laminar substrate corrosion protection layer (11)
(1-1000 microns of epoxy crystal-bonding adhesive, PTFE glue, epoxy or silica gel or other insulation transparent resins), after dry solidification,
Substrate do not place chip one side along through-hole 7., 8. between, the center of insulation river 2. between corresponding chip electrode, using swashing
Light is cut or mechanical blades score opens insulating layer, and road plan width is 30-50 microns, and substrate is placed in acid tank, sulfuric acid, nitre are used
Acid or other etchant solutions by the corrosion of the substrate metal layer of road plan through thoroughly formed plate electrode (poles P) 1., chip electrode (N
Pole) 5. insulation fracture road (12)；
Step 7: cleaning：The component for completing step 6 is cleaned and dried；
Step 8：The component coating silica gel for completing step 7 or epoxy glue and fluorescent glue, solid glue, cutting are detached into lamp
Item.
Beneficial effects of the present invention：This method saves wire bonder equipment investment using the general positive cartridge chip in market,
Material cost is reduced using common metal substrate, since the faying face of chip and substrate is coated with transparent adhesive tape, chip P/N electrodes
Between form physical barrier, be effectively prevented short circuit problem of the chip P/N electrodes when tin cream welds.Chip electrode face and substrate
It forms tin cream and welds access, the heat conduction and heat radiation performance of chip is improved, finally among the P/N electrodes due to having eroded chip
Insulate river, and chip electrode face does not have opaque substrate barrier so that chip full can shine, and be promoted in properties of product same
When, production efficiency greatly improves, and production cost is greatly reduced.
Chart explanation
The structural schematic diagram of Fig. 1 present invention
The filamentray structure schematic diagram of the existing markets Fig. 2 mainstream
Filament dorsal view after Fig. 3 cuttings, separation
Filament vertical view after Fig. 4 cuttings, separation
Fig. 5 substrate attack shaping circuit structural schematic diagrams
Wherein：1, insulate river 3, chip Sapphire Substrate 4, transparent insulation between chip electrode (poles P) 2, chip electrode
Glue 5, chip electrode (poles N) 6, substrate 7, chip electrode (poles P) through-hole 8, chip electrode (poles N) through-hole 9, crystal-bonding adhesive
10, gold thread 11, substrate attack protective layer 12, substrate insulation fracture road
Specific invention content and embodiment
The present invention provides a kind of New LED filament manufacturing technologies, are bitten in particular by special substrate combination is pre-processed
Substrate contact LED chip kept man of a noblewoman is first coated insulating cement, then substrate is corresponded to the P/N electricity of chip using laser by tin cream technology
Hole is got through in pole, after chip electrode face is installed to corresponding position, bites method using the through-hole use on substrate and bites tin cream
To chip electrode face, while tin cream is filled up completely substrate through-hole, and heating welding chip electrode is connected with substrate, finally passes through again
The metal erosion that substrate is corresponded to the electrode intermediate insulation rivers chip P/N part by chemical attack or laser cutting is fallen.This method
Using the positive cartridge chip that market is general, bonder, wire bonder equipment investment are saved, material is reduced using common metal substrate
Cost forms physical barrier between chip P/N electrodes, is effectively prevented since the faying face of chip and substrate is coated with transparent adhesive tape
Short circuit problem of the chip P/N electrodes when tin cream welds.Access is welded since chip electrode face and substrate form tin cream, is improved
The heat conduction and heat radiation performance of chip, last insulation river among the P/N electrodes due to having eroded chip, chip electrode face does not have
There is opaque substrate barrier so that chip full can shine, and while properties of product are promoted, production efficiency greatly improves,
Production cost is greatly reduced.Include the following steps：
The present invention is specifically described in the following drawings and case study on implementation.
What the drawings and the specific embodiments or embodiment were merely exemplary, and is not intended to limit the present invention.
Embodiment 1：
Select LED core sheet type：Formal dress blue chip, chip size 8*15mil, product structure as shown in Figure 1
Step 1: substrate pre-processes：By a kind of conduct of metal substrate 6. (iron plate, 100-150 microns of substrate thickness) etc.
The one side of substrate is coated 50--100 microns of thick insulation transparent glue by the substrate of filament encapsulation, 200 ± 50 microns of substrate thickness
(4. epoxy crystal-bonding adhesive)；
Step 2: laser boring：By pretreated substrate use laser-beam drilling machine, according to chip electrode (poles P) 1., core
5. 7., 8. (through hole), pore diameter range are plate electrode (poles N) for corresponding position progress laser boringMicron, laser is from base
4. plate coating insulation transparent glue is injected on one side, it is as shown in Figure 3 that step 2 completes component；
Step 3: chip die bond：4. on one side by chip electrode face counterpart substrate coating insulation transparent glue, according to the two of chip
1., 5. 7., 8. a electrode aligns two through holes respectively, entire substrate places chip in corresponding position, and chip, which is put, to be finished
Afterwards, substrate coating insulation transparent glue one is flat on smooth workbench and is fixed down；
Step 4: tin cream is bitten：In the uncoated insulation transparent glue one side scraper of substrate, tin cream is bitten, is passed through
Through-hole on substrate 7., 8. bite substrate coating insulation transparent glue surface chip counter electrode 1., 5. on；
Step 5: electrode welding：Electric boiling plate is covered in the uncoated insulation transparent glue one side of substrate after the completion of biting, is led to
230 degree positive and negative 5 degree are electrically heated to, keep the temperature 3 minutes (or the substrate for biting completion is put into electrocaloric effect and is being heated to 230 degree just
Minus 5 degree), then Temperature fall to room temperature；
Step 6: insulating tape makes：The substrate two sides that electrode welding is completed coats a laminar substrate corrosion protection layer (11)
(100 ± 50 microns of epoxy crystal-bonding adhesives), after dry solidification, as shown in Figure 5 substrate do not place chip one side along through-hole 7.,
8. between, the center of insulation river 2. between corresponding chip electrode, opening insulating layer using laser cutting or mechanical blades score (will
Substrate metal is exposed), road plan width is 50 ± 20 microns, and substrate is placed in acid tank, molten using sulfuric acid, nitric acid or other corrosion
Liquid by the corrosion of the substrate metal layer of road plan through thoroughly formed plate electrode (poles P) 1., chip electrode (poles N) 5. insulate and is broken road
(12)；
Step 7: cleaning：The component for completing step 6 is cleaned and dried, it is as shown in Figure 4 that step 7 completes component；
Step 8：The component coating silica gel for completing step 7 or epoxy glue and fluorescent glue, solid glue, cutting are detached into lamp
Item.
Claims (7)
1. a kind of New LED filament manufacturing technology combines in particular by pretreatment pretreated substrate and bites tin cream technology, by base
The P/N electrode positions that plate corresponds to chip get through hole using laser, corresponding by chip electrode facing towards the real estate of coating insulating cement
Lead to the hole site is placed, and is included the following steps：
Step 1: substrate pre-processes：6. (conductive metals such as copper, aluminium, iron, tin, lead or other conductive materials) etc. by metal substrate
A kind of substrate as filament encapsulation, the one side of substrate coats 1--1000 microns of thickness by 10--1000 micron of substrate thickness
Insulation transparent glue is 4. (PTFE, epoxy crystal-bonding adhesive, transparent silica gel etc.)；
Step 2: laser boring：By pretreated substrate use laser-beam drilling machine, according to chip electrode (poles P) 1., chip electricity
5. 7., 8. (through hole), pore diameter range are for corresponding position progress laser boring for pole (poles N)Micron, laser are applied from substrate
Insulation transparent glue is covered 4. to inject on one side；
Step 3: chip die bond：4. on one side by chip electrode face counterpart substrate coating insulation transparent glue, according to two electricity of chip
1., 5. 7., 8. pole aligns two through holes respectively, entire substrate places chip in corresponding position, will after chip is put
Substrate coating insulation transparent glue one is flat on smooth workbench and fixes down；
Step 4: tin cream is bitten：In the uncoated insulation transparent glue one side scraper of substrate, tin cream is bitten, substrate is passed through
On through-hole 7., 8. bite substrate coating insulation transparent glue surface chip counter electrode 1., 5. on；
Step 5: electrode welding：Electric boiling plate is covered after the completion of biting in the uncoated insulation transparent glue one side of substrate, is powered and adds
Heat is to 230 degree positive and negative 5 degree, or the substrate for biting completion is put into electrocaloric effect and is heated to 230 degree positive and negative 5 degree；
Step 6: insulating tape makes：The substrate two sides that electrode welding is completed coats laminar substrate corrosion protection layer (11) (1-
1000 microns of epoxy crystal-bonding adhesive, PTFE glue, epoxy or silica gel or other insulation transparent resins), after dry solidification, in substrate
Do not place chip one side along through-hole 7., 8. between, the center of insulation river 2., is cut using laser between corresponding chip electrode
Cut or mechanical blades score open insulating layer, road plan width is 30-50 micron, by substrate merging acid tank, using sulfuric acid, nitric acid or its
His etchant solution by the substrate metal layer corrosion of road plan through thoroughly formed plate electrode (poles P) 1., chip electrode (poles N) 5. insulate
It is broken road (12)；
Step 7: cleaning：The component for completing step 6 is cleaned and dried；
Step 8：The component coating silica gel for completing step 7 or epoxy glue and fluorescent glue, solid glue, cutting are detached into lamp bar.
2. New LED filament manufacturing technology according to claim 1, which is characterized in that select 10-1000 micron metal bases
6. and using two sides or single side 8. plate applies insulating cement, rubberization thickness is 1-1000 microns.
3. New LED filament manufacturing technology according to claim 1, which is characterized in that use pretreated substrate
Laser-beam drilling machine, according to chip electrode (poles P) 1., chip electrode (poles N) 5. corresponding position carry out laser boring 7., 8. (run through
Hole), pore diameter range is4. micron, laser are injected on one side from substrate coating insulation transparent glue, through hole is used for chip
Electrode bites tin cream and forms being conductively connected for chip electrode and substrate.
4. New LED filament manufacturing technology according to claim 1, which is characterized in that chip electrode (poles P) 1., chip
Electrode (poles N) 5. 4. place counterpart substrate substrate coating insulation transparent glue by one side die bond, two electrodes of chip 1., it is 5. right respectively
7., 8., entire substrate is well placed chip to two through holes in position in corresponding position, after chip is put, chip electrode center pair
Answer the central point of substrate through hole.
5. New LED filament manufacturing technology according to claim 1, which is characterized in that use fine grain tin cream, use leakage
Print technology, by tin cream by substrate through-hole bite chip electrode 1., 5. on, 7., 8. tin cream fills up substrate through-hole.
6. New LED filament manufacturing technology according to claim 1, it is characterised in that carried out using electric hot plate or electrocaloric effect
Electrode welding.
7. New LED filament manufacturing technology according to claim 1, it is characterised in that using sulfuric acid, nitric acid or other changes
Corrosive liquid is learned to corrode substrate to form corresponding circuit.
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| CN201710333795.1A CN108807352B (en) | 2017-05-03 | 2017-05-03 | Novel L ED filament manufacturing method |
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| CN108807352B CN108807352B (en) | 2020-07-14 |
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| CN109817796A (en) * | 2019-01-24 | 2019-05-28 | 南通沃特光电科技有限公司 | A kind of LED encapsulation structure and its packaging method with the double-deck fluorescence coating |
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| CN108807352B (en) | 2020-07-14 |
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