CN108807112B - Coaxial double-dielectric interdigital arrangement high-power microwave device - Google Patents
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- 239000003989 dielectric material Substances 0.000 claims abstract description 23
- 239000004020 conductor Substances 0.000 claims abstract description 18
- 238000010894 electron beam technology Methods 0.000 claims abstract description 18
- 239000002184 metal Substances 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 230000004323 axial length Effects 0.000 claims description 12
- 238000002347 injection Methods 0.000 claims description 7
- 239000007924 injection Substances 0.000 claims description 7
- 230000000644 propagated effect Effects 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 230000002708 enhancing effect Effects 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 description 6
- 239000000243 solution Substances 0.000 description 5
- 230000005466 cherenkov radiation Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 239000007770 graphite material Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J23/00—Details of transit-time tubes of the types covered by group H01J25/00
- H01J23/02—Electrodes; Magnetic control means; Screens
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Abstract
The invention discloses a coaxial double-dielectric interdigital arrangement high-power microwave device, which comprises an outer cylinder, wherein a cathode and a coaxial inner conductor arranged in the axial direction of the outer cylinder are arranged in the outer cylinder, the cathode is coaxial with the coaxial inner conductor, and the coaxial double-dielectric interdigital arrangement high-power microwave device is characterized in that a coaxial dielectric is filled between the outer cylinder and the coaxial inner conductor, the coaxial dielectric is two dielectrics which are periodically filled in a staggered manner and have different dielectric coefficients, the coaxial dielectric is provided with an annular structure to form a coaxial dielectric cavity, the coaxial dielectric is divided into an inner coaxial dielectric and an outer coaxial dielectric through the coaxial dielectric cavity, the two dielectrics of the inner coaxial dielectric and the outer coaxial dielectric are arranged in an interdigital manner, an annular strong current electron beam emitted by the cathode is guided through a magnetic field and is transmitted in the coaxial dielectric cavity, and the device with the structure is adopted to ensure that the microwave generates, thereby enhancing the clustering of the electron beams and improving the conversion efficiency of the beam waves.
Description
Technical Field
The invention belongs to the technical field of high-power microwave devices, and particularly relates to a coaxial double-dielectric interdigital arrangement high-power microwave device.
Background
High Power Microwave (HPM) generally refers to an electromagnetic wave with a peak power of more than 100MW and a working frequency of 1-300 GHz. The research and development of high-power microwave technology and microwave devices have been over 30 years old, and in recent years, with the continuous development of pulse power technology and plasma physics, the high-power microwave technology develops rapidly, and especially the development of high-power microwave sources has made great progress. Up to now, the power level has been raised by several orders of magnitude compared with the common microwave source, and has been widely applied in many scientific fields, thereby also making high power microwave a new technology, which is developing towards the direction of shorter wavelength and ultra high power by means of the huge power and energy reserve capacity of modern strong relativistic electron beam technology.
So far, the development of high power microwave has gone through the stage of simple new concept exploration of single power pursuit, and the research focus has shifted to more detailed technology related to the practical application of high power microwave. The main research contents of the high-power microwave source technology at present are to improve the generation efficiency and the single pulse energy of the high-power microwave source system, to miniaturize the system, to design the system in an integrated manner and to develop an intelligent high-power microwave device. A further practical application of high power microwave devices is miniaturization.
Charged particles moving along the surface of a medium will generate cerenkov radiation when the velocity exceeds the speed of light propagating in the medium. When a beam of electrons is transmitted in a partially filled dielectric waveguide, the radiation can be decomposed into various mode components in the waveguide, and when the speed of the electron beam is close to and greater than the phase speed of a certain mode, the interaction of the mode and the electron beam is amplified, so that coherent stimulated radiation is generated, and the Cerenkov radiation device is formed.
In the dielectric Cerenkov radiation oscillator, the slow wave structure is not a waveguide with periodically changed metal wall, but a coaxial metal circular waveguide with a layer of constant lining on its inner surface1Greater than vacuum dielectric constant0The dielectric coaxial dielectric waveguide of (1). Since the slow wave structure is not periodic, its dispersion curve is more like that of a cylindrical waveguide. Effective dielectric constant of waveguideeffIs located at0And1its value depends on the overall system dimensions. The effective dielectric constant of the system increases as the thickness of the dielectric increases1Increasing, causing the output frequency to decrease. When a dielectric with a large dielectric constant is used for lining instead of a dielectric with a small dielectric constant, the phase velocity of the structural mode can be slowed down more effectively, and the output frequency is reduced.
A single dielectric waveguide dispersion curve can note that the group velocity of the radiating microwaves at resonance is always positive. The device with the structure has no reverse wave medium Cerenkov device, and only has a traveling wave medium Cerenkov device.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide a coaxial double-dielectric interdigital high-power microwave device for enhancing the clustering of high-current electron beams and improving the conversion efficiency of beam waves.
In order to achieve the purpose, the invention is mainly realized by the following technical scheme:
a coaxial double-dielectric interdigital arrangement high-power microwave device comprises an outer cylinder, wherein a cathode and a coaxial inner conductor arranged in the axial direction of the outer cylinder are arranged in the outer cylinder, and the cathode is coaxial with the coaxial inner conductor.
In the above technical solution, the two dielectrics of the outer coaxial dielectric and the inner coaxial dielectric are periodically and alternately filled along the axis direction of the outer cylinder.
In the above technical solution, the coaxial dielectric cavity is a vacuum cavity.
In the above technical scheme, one end of the coaxial dielectric cavity is provided with a metal plate vertically connected with the outer cylinder, the metal plate is provided with an annular injection port for guiding the high current electron beam to enter the coaxial dielectric cavity, and the diameter of the annular injection port is the same as the diameter of the coaxial dielectric cavity.
In the technical scheme, the tail end of the coaxial dielectric is provided with a conical structure, the conical structure connected with the inner coaxial dielectric or the outer coaxial dielectric is a horn structure, and the diameter of the horn structure connected with the outer coaxial dielectric is increased along the axial direction of the outer cylinder until the diameter of the conical structure is the same as that of the outer cylinder.
In the above technical solution, one of the dielectrics has an axial length of L1The wavelength of the microwave generated by the device and propagated in the medium is lambda1Then, the following conditions are satisfied:
wherein n is1Is an odd number.
In the above solution, the axial length of the other dielectric is L2The wavelength of the microwave generated by the device and propagated in the medium is lambda2Then, the following conditions are satisfied:
wherein,n2is an odd number.
In summary, due to the adoption of the technical scheme, the invention has the following beneficial effects:
the high-power microwave device adopts coaxial dielectrics, the coaxial dielectrics are two kinds of dielectrics which are periodically and alternately filled between the inner wall of the outer cylinder and the coaxial inner conductor, the dielectric coefficients of the two kinds of dielectrics are different, and the two kinds of dielectrics of the inner coaxial dielectrics and the two kinds of dielectrics of the outer coaxial dielectrics are mutually arranged in an interdigital way. The device generates high power microwaves, and the axial length of the coaxial dielectric is about an odd multiple of one-half the wavelength of the high power microwaves. The two dielectric media are arranged in a crossed manner, so that microwaves are totally reflected in the transmitted medium, the clustering of electron beams is enhanced, and the beam-wave conversion efficiency is improved.
Drawings
Fig. 1 is a schematic diagram of the overall structure of a coaxial dual-dielectric interdigital high-power microwave device.
Wherein: 1. the coaxial high-current electron beam device comprises a cathode, 2, an outer cylinder, 3, a metal circular waveguide, 4, a dielectric medium with a smaller dielectric constant in the coaxial dielectric waveguide, 5, a dielectric medium with a larger dielectric constant in the coaxial dielectric waveguide, 6, a conical structure, 7, an annular high-current electron beam, 8 and a coaxial inner conductor.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
The coaxial double-dielectric interdigital arrangement high-power microwave device shown in figure 1 comprises an outer cylinder, wherein a cathode and a coaxial inner conductor are arranged in the outer cylinder, and the coaxial inner conductor is arranged in the axial direction of the outer cylinder and is coaxial with the cathode. The cathode is generally made of graphite material, and is exploded and emitted by the electric field force between the cathode and the anode to generate annular high-current electron beams. Under the guidance of a magnetic field, the annular high-current electron beam is axially transmitted in a vacuum chamber formed by coaxial dielectrics, and the selection of voltage and beam intensity needs to comprehensively consider the structural form of a device so as to carry out optimization design. The outer cylinder is generally made of non-magnetic stainless steel or oxygen-free copper material and is used for axially transmitting high-power microwave.
Two coaxial dielectrics with different dielectric coefficients are periodically filled between the inner wall of the outer cylinder and the coaxial inner conductor, and the coaxial dielectrics are supported by the outer cylinder. The axial length of the dielectric is about an odd half of the wavelength at which the device generates microwaves for propagation in the dielectric. I.e. one of the dielectrics has a relatively small dielectric constant in the two dielectrics, the axial length of which is L1The wavelength of the microwave generated by the device and propagated in the medium is lambda1Then, the following conditions are satisfied:the specific axial length needs to comprehensively consider the positive gas structure size of the device, and then the optimal design is carried out. The other dielectric has a relatively large electrical constant, and the dielectric has an axial length of L2, and the device generates microwave propagating in the dielectric at a wavelength λ2Then, the following conditions are satisfied:the specific axial length needs to comprehensively consider the overall structure size of the device, and then the optimal design is carried out. In the formula n1,n2Are all odd numbers.
The coaxial dielectric has a coaxial dielectric cavity of annular configuration extending in the axial direction of the outer barrel, so that the coaxial dielectric cavity divides the coaxial dielectric into two parts for the coaxial dielectric cavity. One part is an outer coaxial dielectric (i.e. an outer waveguide) between the outer diameter of the coaxial dielectric cavity and the outer barrel, and the other part is an inner coaxial dielectric (i.e. an inner waveguide) between the inner diameter of the coaxial dielectric cavity and the coaxial inner conductor. The two dielectrics between the outer waveguide and the inner waveguide are arranged in an interdigital way, and the two dielectrics have the same structural size between the inner waveguide and the outer waveguide.
One end of the coaxial dielectric cavity is a starting end, the starting end is a metal cylinder with the same diameter, and a metal plate (namely a metal circular waveguide) vertically connected with the outer cylinder is arranged and usually made of nonmagnetic stainless steel or oxygen-free copper material. The metal plate is supported by the coaxial inner conductor, and the coaxial inner conductor is connected with the outer barrel through the supporting rod and forms equipotential with the outer barrel. The metal plate is provided with an annular injection port for guiding a high-current electron beam to enter the coaxial dielectric cavity, and the diameter of the annular injection port is the same as the diameter of the coaxial dielectric cavity.
The other end of the coaxial dielectric cavity is a terminal end, the terminal end is connected with the conical structure in the outer cylinder, namely, the terminal ends of the outer coaxial dielectric and the inner coaxial dielectric are respectively connected with the corresponding conical structures, the conical structure corresponding to the inner coaxial dielectric is in a horn mouth shape, and the diameter of the conical structure connected with the inner coaxial dielectric is reduced along the axial direction of the outer cylinder. The conical structure connected with the outer coaxial dielectric is of a horn structure, and the diameter of the horn structure connected with the outer coaxial dielectric is increased along the axial direction of the outer cylinder until the diameter of the conical structure is the same as that of the outer cylinder.
Example one
The cathode in the device is prepared from graphite materials, an annular high-current electron beam is generated by explosion emission under the action of electric field force between the cathode and the anode, and the inner diameter of the graphite cathode is 2.3cm, and the outer diameter of the graphite cathode is 2.4 cm. The annular high current electron beam enters the coaxial dielectric cavity through the annular injection port to be transmitted under the guidance of a magnetic field, the guidance magnetic field intensity of the electron beam is 0.6T, the voltage is 350kV, and the current is 1.6 kA. The inner diameter of the metal outer cylinder is 3.2cm, two dielectrics with different dielectric coefficients are periodically filled in the inner wall of the metal outer cylinder and the coaxial inner conductor, and the axial structural parameters and the arrangement modes of the coaxial dielectrics filled in the inner wall of the metal outer cylinder and the outer wall of the coaxial inner conductor are completely consistent. Wherein a dielectric medium has a dielectric constant of 2.5, and a half of the propagation wavelength of a microwave with a wavelength of 3.3cm in vacuum in the medium is 1.0 cm; the dielectric constant of the other dielectric medium is 9, the half of the propagation wavelength of the microwave with the wavelength of 3.3cm in vacuum in the dielectric medium is 0.55cm, all the structural parameters of the device are comprehensively considered in the example, and the axial length of one dielectric medium is optimally designed to be 3.6 cm; the axial length of the other dielectric was 2.45 cm.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (5)
1. A coaxial double-dielectric interdigital arrangement high-power microwave device comprises an outer cylinder, wherein a cathode and a coaxial inner conductor arranged in the axial direction of the outer cylinder are arranged in the outer cylinder, the cathode and the coaxial inner conductor are coaxial, it is characterized in that a coaxial dielectric medium is filled between the outer cylinder and the coaxial inner conductor, the coaxial dielectric medium is two dielectric media which are periodically filled in a staggered way and have different dielectric coefficients, the coaxial dielectric is provided with a coaxial dielectric cavity with an annular structure, the coaxial dielectric is divided into an inner coaxial dielectric and an outer coaxial dielectric through the coaxial dielectric cavity, the two dielectrics of the inner coaxial dielectric and the outer coaxial dielectric are arranged in an interdigital manner, the arrangement modes of the two dielectrics of the inner coaxial dielectric and the outer coaxial dielectric are different, and an annular high current electron beam emitted by a cathode is guided by a magnetic field and is transmitted in the coaxial dielectric cavity;
wherein one dielectric has an axial length of L1The wavelength of the microwave generated by the device and propagated in the medium is lambda1Then, the following conditions are satisfied:
wherein n is1Is odd;
another dielectric medium having an axial length L2The wavelength of the microwave generated by the device and propagated in the medium is lambda2Then, the following conditions are satisfied:
wherein n is2Is a strangeAnd (4) counting.
2. The microwave device according to claim 1, wherein the two dielectric layers of the outer coaxial dielectric layer and the inner coaxial dielectric layer are periodically and alternately filled along the axial direction of the outer cylinder.
3. The microwave device of claim 1, wherein the coaxial dielectric cavity is a vacuum cavity.
4. The microwave device according to claim 1, wherein a metal plate is disposed at one end of the coaxial dielectric cavity and vertically connected to the outer cylinder, and the metal plate is provided with an annular injection port for guiding the high current electron beam into the coaxial dielectric cavity, and the diameter of the annular injection port is the same as the diameter of the coaxial dielectric cavity.
5. The coaxial dual-dielectric interdigital arrangement high-power microwave device according to claim 1, wherein the end of the coaxial dielectric is provided with a conical structure, the conical structure connected with the inner coaxial dielectric or the outer coaxial dielectric is a horn structure, and the diameter of the horn structure connected with the outer coaxial dielectric is increased along the axial direction of the outer cylinder until the diameter of the conical structure is the same as the diameter of the outer cylinder.
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CN115642378B (en) * | 2022-10-08 | 2023-06-23 | 长沙航天华成科技有限公司 | Coaxial Cerenkov type high-power microwave oscillator for collecting electrons based on outer waveguide wall |
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