CN108793768B - Low-emissivity glass with ZrN layer - Google Patents
Low-emissivity glass with ZrN layer Download PDFInfo
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- CN108793768B CN108793768B CN201810701264.8A CN201810701264A CN108793768B CN 108793768 B CN108793768 B CN 108793768B CN 201810701264 A CN201810701264 A CN 201810701264A CN 108793768 B CN108793768 B CN 108793768B
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3613—Coatings of type glass/inorganic compound/metal/inorganic compound/metal/other
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3644—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the metal being silver
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3649—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer made of metals other than silver
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3657—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having optical properties
- C03C17/366—Low-emissivity or solar control coatings
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/15—Deposition methods from the vapour phase
- C03C2218/154—Deposition methods from the vapour phase by sputtering
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- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Surface Treatment Of Glass (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention provides low-emissivity glass with a ZrN layer, which is prepared by the following steps: depositing a bottom dielectric layer on a glass substrate; depositing a first isolation layer on the bottom dielectric layer; depositing a first ZrN layer on the first isolation layer; depositing a first Ag layer on the first ZrN layer; depositing a first Cu layer on the first Ag layer; depositing a first Pd layer on the first Cu layer; depositing a second ZrN layer on the first Pd layer; depositing a second isolating layer on the second ZrN layer; and depositing a top protective layer on the second isolation layer. Aiming at the problems in the prior art, the invention provides the low-emissivity glass with the ZrN layer, the ZrN layer is added, so that the low-emissivity characteristic of the material is greatly improved, and meanwhile, the Cu layer and the Pd layer are added, and the layer sequence among the layers is specially designed, so that the low-emissivity glass can present a golden appearance.
Description
Technical Field
The invention relates to the field of low-emissivity glass, in particular to low-emissivity glass with a ZrN layer.
Background
At present, 50% of building energy consumption is dissipated through a window, so that the reduction of heat loss of the glass window has very important significance for building energy conservation. At present, domestic energy-saving glass windows mainly comprise the following components: the low-emissivity coated glass has good light transmission and can effectively block infrared heat radiation, and the U value (heat conduction coefficient) of the low-emissivity coated glass is 1.3-1.8W/m2K is one fourth of common glass, and the heat preservation and insulation capacity of the glass is far higher than that of a common wall. Therefore, the low-emissivity coated glass is an ideal energy-saving window glass material which is recognized in the world.
The information disclosed in this background section is only for enhancement of understanding of the general background of the invention and should not be taken as an acknowledgement or any form of suggestion that this information forms the prior art already known to a person skilled in the art.
Disclosure of Invention
The object of the present invention is to provide, thereby overcoming the drawbacks of the prior art.
In order to achieve the above object, the present invention provides a low emissivity glass having a ZrN layer, wherein: the low-emissivity glass is prepared by the following method: depositing a bottom dielectric layer on a glass substrate; depositing a first isolation layer on the bottom dielectric layer; depositing a first ZrN layer on the first isolation layer; depositing a first Ag layer on the first ZrN layer; depositing a first Cu layer on the first Ag layer; depositing a first Pd layer on the first Cu layer; depositing a second ZrN layer on the first Pd layer; depositing a second isolating layer on the second ZrN layer; and depositing a top protective layer on the second isolation layer.
Preferably, in the above technical solution, the bottom dielectric layer is a titanium dioxide layer, the thickness of the bottom dielectric layer is 30-40nm, the first isolation layer is a metal titanium layer, and the thickness of the first isolation layer is 20-30 nm.
Preferably, in the above technical solution, the second isolation layer is a NiCr layer, the thickness of the second isolation layer is 30-40nm, and the top protection layer is Si3N4The thickness of the top protective layer is 20-30 nm.
Preferably, in the above technical solution, depositing the first ZrN layer on the first isolation layer specifically includes: by adopting a radio frequency sputtering method, the target material is zirconium metal, the nitrogen flow is 50-60sccm, the sputtering power is 900W at the temperature of 700-.
Preferably, in the above technical solution, depositing the first Ag layer on the first ZrN layer specifically includes: by adopting a radio frequency sputtering method, the target material is metal Ag, the nitrogen flow is 10-20sccm, the sputtering power is 200-.
Preferably, in the above technical solution, depositing the first Cu layer on the first Ag layer specifically includes: by adopting a radio frequency sputtering method, the target material is Cu, the nitrogen flow is 10-20sccm, the sputtering power is 400W under 300-.
Preferably, in the above technical solution, depositing the first Pd layer on the first Cu layer specifically includes: by adopting a radio frequency sputtering method, the target material is metal Pd, the nitrogen flow is 10-20sccm, the sputtering power is 400W under 300-.
Preferably, in the above technical solution, depositing the second ZrN layer on the first Pd layer specifically includes: by adopting a radio frequency sputtering method, the target material is metal Zr, the nitrogen flow is 80-90sccm, the sputtering power is 900-.
Compared with the prior art, the invention has the following beneficial effects: a wide variety of low emissivity glasses have been proposed in the art. However, most of the low-emissivity glass in the prior art still has the defect of dark color, and since the mainstream low-emissivity glass is still low-emissivity glass with an Ag layer, most of the low-emissivity glass reflects red, green or blue due to the special properties of the metal layer, and the colors all cause poor appearance of buildings. Meanwhile, due to the limitation of the metal film, the Ag layer cannot be made thick, so that the low-radiation performance of the material is limited. Aiming at the problems in the prior art, the invention provides the low-emissivity glass with the ZrN layer, the ZrN layer is added, so that the low-emissivity characteristic of the material is greatly improved, and meanwhile, the Cu layer and the Pd layer are added, and the layer sequence among the layers is specially designed, so that the low-emissivity glass can present a golden appearance.
Detailed Description
The following embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
Example 1
The low-emissivity glass is prepared by the following method: depositing a bottom dielectric layer on a glass substrate; depositing a first isolation layer on the bottom dielectric layer; depositing a first ZrN layer on the first isolation layer; depositing a first Ag layer on the first ZrN layer; depositing a first Cu layer on the first Ag layer; depositing a first Pd layer on the first Cu layer; depositing a second ZrN layer on the first Pd layer; depositing a second isolating layer on the second ZrN layer; and depositing a top protective layer on the second isolation layer. The bottom dielectric layer is a titanium dioxide layer, the thickness of the bottom dielectric layer is 30nm, the first isolation layer is a metal titanium layer, and the thickness of the first isolation layer is 20 nm. The second isolation layer is NiCr layer with a thickness of 30nm, and the top protective layer is Si3N4The thickness of the top protective layer is 20 nm. The deposition of the first ZrN layer on the first isolation layer specifically comprises the following steps: by adopting a radio frequency sputtering method, the target material is zirconium metal, the nitrogen flow is 50sccm, the sputtering power is 700W, the substrate temperature is 200 ℃, and the thickness of the first ZrN layer is 8 nm. In thatThe deposition of the first Ag layer on the first ZrN layer specifically comprises the following steps: by adopting a radio frequency sputtering method, the target material is metal Ag, the nitrogen flow is 10sccm, the sputtering power is 200W, the substrate temperature is 300 ℃, and the thickness of the first Ag layer is 4 nm. The deposition of the first Cu layer on the first Ag layer specifically comprises: by adopting a radio frequency sputtering method, the target material is metal Cu, the nitrogen flow is 10sccm, the sputtering power is 300W, the substrate temperature is 150 ℃, and the thickness of the first Cu layer is 4 nm. The deposition of the first Pd layer on the first Cu layer specifically is: by adopting a radio frequency sputtering method, the target material is metal Pd, the nitrogen flow is 10sccm, the sputtering power is 300W, the substrate temperature is 200 ℃, and the thickness of the first Pd layer is 2 nm. The deposition of the second ZrN layer on the first Pd layer specifically comprises: and adopting a radio frequency sputtering method, wherein the target material is metal Zr, the nitrogen flow is 80sccm, the sputtering power is 900W, the substrate temperature is 300 ℃, and the thickness of the second ZrN layer is 4 nm.
Example 2
The low-emissivity glass is prepared by the following method: depositing a bottom dielectric layer on a glass substrate; depositing a first isolation layer on the bottom dielectric layer; depositing a first ZrN layer on the first isolation layer; depositing a first Ag layer on the first ZrN layer; depositing a first Cu layer on the first Ag layer; depositing a first Pd layer on the first Cu layer; depositing a second ZrN layer on the first Pd layer; depositing a second isolating layer on the second ZrN layer; and depositing a top protective layer on the second isolation layer. The bottom dielectric layer is a titanium dioxide layer, the thickness of the bottom dielectric layer is 40nm, the first isolation layer is a metal titanium layer, and the thickness of the first isolation layer is 30 nm. The second isolation layer is NiCr layer with a thickness of 40nm, and the top protective layer is Si3N4The thickness of the top protective layer is 30 nm. The deposition of the first ZrN layer on the first isolation layer specifically comprises the following steps: by adopting a radio frequency sputtering method, the target material is zirconium metal, the nitrogen flow is 60sccm, the sputtering power is 900W, the substrate temperature is 300 ℃, and the thickness of the first ZrN layer is 12 nm. The deposition of the first Ag layer on the first ZrN layer specifically comprises the following steps: by adopting a radio frequency sputtering method, the target material is metal Ag, the nitrogen flow is 20sccm, the sputtering power is 300W, the substrate temperature is 350 ℃, and the thickness of the first Ag layer is 8 nm. The deposition of the first Cu layer on the first Ag layer specifically comprises: by using a radio frequency sputtering method, the target material is metal Cu, the nitrogen flow is 20sccm, the sputtering power is 400W, the substrate temperature is 200 ℃, and the thickness of the first Cu layer is 6 nm. The deposition of the first Pd layer on the first Cu layer specifically is: by adopting a radio frequency sputtering method, the target material is metal Pd, the nitrogen flow is 20sccm, the sputtering power is 400W, the substrate temperature is 250 ℃, and the thickness of the first Pd layer is 4 nm. The deposition of the second ZrN layer on the first Pd layer specifically comprises: and adopting a radio frequency sputtering method, wherein the target material is metal Zr, the nitrogen flow is 90sccm, the sputtering power is 1000W, the substrate temperature is 350 ℃, and the thickness of the second ZrN layer is 6 nm.
Example 3
The low-emissivity glass is prepared by the following method: depositing a bottom dielectric layer on a glass substrate; depositing a first isolation layer on the bottom dielectric layer; depositing a first ZrN layer on the first isolation layer; depositing a first Ag layer on the first ZrN layer; depositing a first Cu layer on the first Ag layer; depositing a first Pd layer on the first Cu layer; depositing a second ZrN layer on the first Pd layer; depositing a second isolating layer on the second ZrN layer; and depositing a top protective layer on the second isolation layer. The bottom dielectric layer is a titanium dioxide layer, the thickness of the bottom dielectric layer is 35nm, the first isolation layer is a metal titanium layer, and the thickness of the first isolation layer is 25 nm. The second isolation layer is NiCr layer with a thickness of 35nm, and the top protective layer is Si3N4The thickness of the top protective layer is 25 nm. The deposition of the first ZrN layer on the first isolation layer specifically comprises the following steps: and (3) adopting a radio frequency sputtering method, wherein the target material is metal zirconium, the nitrogen flow is 55sccm, the sputtering power is 800W, the substrate temperature is 250 ℃, and the thickness of the first ZrN layer is 10 nm. The deposition of the first Ag layer on the first ZrN layer specifically comprises the following steps: by adopting a radio frequency sputtering method, the target material is metal Ag, the nitrogen flow is 15sccm, the sputtering power is 250W, the substrate temperature is 320 ℃, and the thickness of the first Ag layer is 6 nm. The deposition of the first Cu layer on the first Ag layer specifically comprises: by adopting a radio frequency sputtering method, the target material is metal Cu, the nitrogen flow is 15sccm, the sputtering power is 350W, the substrate temperature is 170 ℃, and the thickness of the first Cu layer is 5 nm. The deposition of the first Pd layer on the first Cu layer specifically is: adopting a radio frequency sputtering method, wherein the target material is metal Pd, the nitrogen flow is 15sccm, the sputtering power is 350W, the substrate temperature is 230 ℃, and the thickness of the first Pd layer is thickThe degree was 3 nm. The deposition of the second ZrN layer on the first Pd layer specifically comprises: and adopting a radio frequency sputtering method, wherein the target material is metal Zr, the nitrogen flow is 85sccm, the sputtering power is 950W, the substrate temperature is 320 ℃, and the thickness of the second ZrN layer is 5 nm.
Example 4
The low-emissivity glass is prepared by the following method: depositing a bottom dielectric layer on a glass substrate; depositing a first isolation layer on the bottom dielectric layer; depositing a first ZrN layer on the first isolation layer; depositing a first Ag layer on the first ZrN layer; depositing a first Cu layer on the first Ag layer; depositing a first Pd layer on the first Cu layer; depositing a second ZrN layer on the first Pd layer; depositing a second isolating layer on the second ZrN layer; and depositing a top protective layer on the second isolation layer. The bottom dielectric layer is a titanium dioxide layer, the thickness of the bottom dielectric layer is 60nm, the first isolation layer is a metal titanium layer, and the thickness of the first isolation layer is 40 nm. The second isolation layer is NiCr layer with a thickness of 50nm, and the top protective layer is Si3N4The thickness of the top protective layer is 40 nm. The deposition of the first ZrN layer on the first isolation layer specifically comprises the following steps: and (3) adopting a radio frequency sputtering method, wherein the target material is metal zirconium, the nitrogen flow is 100sccm, the sputtering power is 1000W, the substrate temperature is 350 ℃, and the thickness of the first ZrN layer is 20 nm. The deposition of the first Ag layer on the first ZrN layer specifically comprises the following steps: by adopting a radio frequency sputtering method, the target material is metal Ag, the nitrogen flow is 15sccm, the sputtering power is 250W, the substrate temperature is 320 ℃, and the thickness of the first Ag layer is 6 nm. The deposition of the first Cu layer on the first Ag layer specifically comprises: by adopting a radio frequency sputtering method, the target material is metal Cu, the nitrogen flow is 15sccm, the sputtering power is 350W, the substrate temperature is 170 ℃, and the thickness of the first Cu layer is 5 nm. The deposition of the first Pd layer on the first Cu layer specifically is: by adopting a radio frequency sputtering method, the target material is metal Pd, the nitrogen flow is 15sccm, the sputtering power is 350W, the substrate temperature is 230 ℃, and the thickness of the first Pd layer is 3 nm. The deposition of the second ZrN layer on the first Pd layer specifically comprises: and adopting a radio frequency sputtering method, wherein the target material is metal Zr, the nitrogen flow is 85sccm, the sputtering power is 950W, the substrate temperature is 320 ℃, and the thickness of the second ZrN layer is 5 nm.
Example 5
The low-emissivity glass is prepared by the following method: depositing a bottom dielectric layer on a glass substrate; depositing a first isolation layer on the bottom dielectric layer; depositing a first ZrN layer on the first isolation layer; depositing a first Ag layer on the first ZrN layer; depositing a first Cu layer on the first Ag layer; depositing a first Pd layer on the first Cu layer; depositing a second ZrN layer on the first Pd layer; depositing a second isolating layer on the second ZrN layer; and depositing a top protective layer on the second isolation layer. The bottom dielectric layer is a titanium dioxide layer, the thickness of the bottom dielectric layer is 35nm, the first isolation layer is a metal titanium layer, and the thickness of the first isolation layer is 25 nm. The second isolation layer is NiCr layer with a thickness of 35nm, and the top protective layer is Si3N4The thickness of the top protective layer is 25 nm. The deposition of the first ZrN layer on the first isolation layer specifically comprises the following steps: and (3) adopting a radio frequency sputtering method, wherein the target material is metal zirconium, the nitrogen flow is 55sccm, the sputtering power is 800W, the substrate temperature is 250 ℃, and the thickness of the first ZrN layer is 10 nm. The deposition of the first Ag layer on the first ZrN layer specifically comprises the following steps: by adopting a radio frequency sputtering method, the target material is metal Ag, the nitrogen flow is 30sccm, the sputtering power is 350W, the substrate temperature is 400 ℃, and the thickness of the first Ag layer is 10 nm. The deposition of the first Cu layer on the first Ag layer specifically comprises: by adopting a radio frequency sputtering method, the target material is metal Cu, the nitrogen flow is 15sccm, the sputtering power is 350W, the substrate temperature is 170 ℃, and the thickness of the first Cu layer is 5 nm. The deposition of the first Pd layer on the first Cu layer specifically is: by adopting a radio frequency sputtering method, the target material is metal Pd, the nitrogen flow is 15sccm, the sputtering power is 350W, the substrate temperature is 230 ℃, and the thickness of the first Pd layer is 3 nm. The deposition of the second ZrN layer on the first Pd layer specifically comprises: and adopting a radio frequency sputtering method, wherein the target material is metal Zr, the nitrogen flow is 85sccm, the sputtering power is 950W, the substrate temperature is 320 ℃, and the thickness of the second ZrN layer is 5 nm.
Example 6
The low-emissivity glass is prepared by the following method: depositing a bottom dielectric layer on a glass substrate; depositing a first isolation layer on the bottom dielectric layer; depositing a first ZrN layer on the first isolation layer; depositing a first Ag layer on the first ZrN layer; depositing a first Cu on the first Ag layerA layer; depositing a first Pd layer on the first Cu layer; depositing a second ZrN layer on the first Pd layer; depositing a second isolating layer on the second ZrN layer; and depositing a top protective layer on the second isolation layer. The bottom dielectric layer is a titanium dioxide layer, the thickness of the bottom dielectric layer is 35nm, the first isolation layer is a metal titanium layer, and the thickness of the first isolation layer is 25 nm. The second isolation layer is NiCr layer with a thickness of 35nm, and the top protective layer is Si3N4The thickness of the top protective layer is 25 nm. The deposition of the first ZrN layer on the first isolation layer specifically comprises the following steps: and (3) adopting a radio frequency sputtering method, wherein the target material is metal zirconium, the nitrogen flow is 55sccm, the sputtering power is 800W, the substrate temperature is 250 ℃, and the thickness of the first ZrN layer is 10 nm. The deposition of the first Ag layer on the first ZrN layer specifically comprises the following steps: by adopting a radio frequency sputtering method, the target material is metal Ag, the nitrogen flow is 15sccm, the sputtering power is 250W, the substrate temperature is 320 ℃, and the thickness of the first Ag layer is 6 nm. The deposition of the first Cu layer on the first Ag layer specifically comprises: by adopting a radio frequency sputtering method, the target material is metal Cu, the nitrogen flow is 30sccm, the sputtering power is 500W, the substrate temperature is 250 ℃, and the thickness of the first Cu layer is 3 nm. The deposition of the first Pd layer on the first Cu layer specifically is: by adopting a radio frequency sputtering method, the target material is metal Pd, the nitrogen flow is 15sccm, the sputtering power is 350W, the substrate temperature is 230 ℃, and the thickness of the first Pd layer is 3 nm. The deposition of the second ZrN layer on the first Pd layer specifically comprises: and adopting a radio frequency sputtering method, wherein the target material is metal Zr, the nitrogen flow is 85sccm, the sputtering power is 950W, the substrate temperature is 320 ℃, and the thickness of the second ZrN layer is 5 nm.
Example 7
The low-emissivity glass is prepared by the following method: depositing a bottom dielectric layer on a glass substrate; depositing a first isolation layer on the bottom dielectric layer; depositing a first ZrN layer on the first isolation layer; depositing a first Ag layer on the first ZrN layer; depositing a first Cu layer on the first Ag layer; depositing a first Pd layer on the first Cu layer; depositing a second ZrN layer on the first Pd layer; depositing a second isolating layer on the second ZrN layer; and depositing a top protective layer on the second isolation layer. The bottom dielectric layer is a titanium dioxide layer with a thickness of 35nm, and the first isolation layer is goldThe first isolation layer is 25nm thick. The second isolation layer is NiCr layer with a thickness of 35nm, and the top protective layer is Si3N4The thickness of the top protective layer is 25 nm. The deposition of the first ZrN layer on the first isolation layer specifically comprises the following steps: and (3) adopting a radio frequency sputtering method, wherein the target material is metal zirconium, the nitrogen flow is 55sccm, the sputtering power is 800W, the substrate temperature is 250 ℃, and the thickness of the first ZrN layer is 10 nm. The deposition of the first Ag layer on the first ZrN layer specifically comprises the following steps: by adopting a radio frequency sputtering method, the target material is metal Ag, the nitrogen flow is 15sccm, the sputtering power is 250W, the substrate temperature is 320 ℃, and the thickness of the first Ag layer is 6 nm. The deposition of the first Cu layer on the first Ag layer specifically comprises: by adopting a radio frequency sputtering method, the target material is metal Cu, the nitrogen flow is 15sccm, the sputtering power is 350W, the substrate temperature is 170 ℃, and the thickness of the first Cu layer is 5 nm. The deposition of the first Pd layer on the first Cu layer specifically is: by adopting a radio frequency sputtering method, the target material is metal Pd, the nitrogen flow is 30sccm, the sputtering power is 500W, the substrate temperature is 150 ℃, and the thickness of the first Pd layer is 5 nm. The deposition of the second ZrN layer on the first Pd layer specifically comprises: and adopting a radio frequency sputtering method, wherein the target material is metal Zr, the nitrogen flow is 85sccm, the sputtering power is 950W, the substrate temperature is 320 ℃, and the thickness of the second ZrN layer is 5 nm.
Example 8
The low-emissivity glass is prepared by the following method: depositing a bottom dielectric layer on a glass substrate; depositing a first isolation layer on the bottom dielectric layer; depositing a first ZrN layer on the first isolation layer; depositing a first Ag layer on the first ZrN layer; depositing a first Cu layer on the first Ag layer; depositing a first Pd layer on the first Cu layer; depositing a second ZrN layer on the first Pd layer; depositing a second isolating layer on the second ZrN layer; and depositing a top protective layer on the second isolation layer. The bottom dielectric layer is a titanium dioxide layer, the thickness of the bottom dielectric layer is 35nm, the first isolation layer is a metal titanium layer, and the thickness of the first isolation layer is 25 nm. The second isolation layer is NiCr layer with a thickness of 35nm, and the top protective layer is Si3N4The thickness of the top protective layer is 25 nm. The deposition of the first ZrN layer on the first isolation layer specifically comprises the following steps: by means of radio-frequency sputtering, target materialThe metal zirconium is adopted, the nitrogen flow is 55sccm, the sputtering power is 800W, the substrate temperature is 250 ℃, and the thickness of the first ZrN layer is 10 nm. The deposition of the first Ag layer on the first ZrN layer specifically comprises the following steps: by adopting a radio frequency sputtering method, the target material is metal Ag, the nitrogen flow is 15sccm, the sputtering power is 250W, the substrate temperature is 320 ℃, and the thickness of the first Ag layer is 6 nm. The deposition of the first Cu layer on the first Ag layer specifically comprises: by adopting a radio frequency sputtering method, the target material is metal Cu, the nitrogen flow is 15sccm, the sputtering power is 350W, the substrate temperature is 170 ℃, and the thickness of the first Cu layer is 5 nm. The deposition of the first Pd layer on the first Cu layer specifically is: by adopting a radio frequency sputtering method, the target material is metal Pd, the nitrogen flow is 15sccm, the sputtering power is 350W, the substrate temperature is 230 ℃, and the thickness of the first Pd layer is 3 nm. The deposition of the second ZrN layer on the first Pd layer specifically comprises: and adopting a radio frequency sputtering method, wherein the target material is metal Zr, the nitrogen flow is 20sccm, the sputtering power is 200W, the substrate temperature is 150 ℃, and the thickness of the second ZrN layer is 10 nm.
The light transmittance and heat transfer coefficient were measured for examples 1 to 8, and the test methods were as described in the relevant national standards, and the test results are shown in Table 1.
TABLE 1
The foregoing descriptions of specific exemplary embodiments of the present invention have been presented for purposes of illustration and description. It is not intended to limit the invention to the precise form disclosed, and obviously many modifications and variations are possible in light of the above teaching. The exemplary embodiments were chosen and described in order to explain certain principles of the invention and its practical application to enable one skilled in the art to make and use various exemplary embodiments of the invention and various alternatives and modifications as are suited to the particular use contemplated. It is intended that the scope of the invention be defined by the claims and their equivalents.
Claims (7)
1. A low emissivity glass having a ZrN layer, comprising: the low-emissivity glass is prepared by the following method:
depositing a bottom dielectric layer on a glass substrate;
depositing a first isolation layer on the bottom dielectric layer;
depositing a first ZrN layer on the first isolation layer;
depositing a first Ag layer on the first ZrN layer;
depositing a first Cu layer on the first Ag layer;
depositing a first Pd layer on the first Cu layer;
depositing a second ZrN layer on the first Pd layer;
depositing a second isolating layer on the second ZrN layer;
depositing a top protective layer on the second isolation layer;
the bottom dielectric layer is a titanium dioxide layer, the thickness of the bottom dielectric layer is 30-40nm, the first isolation layer is a metal titanium layer, and the thickness of the first isolation layer is 20-30 nm.
2. The low emissivity glass of claim 1, wherein: the second isolation layer is a NiCr layer, the thickness of the second isolation layer is 30-40nm, and the top protection layer is Si3N4And the thickness of the top protective layer is 20-30 nm.
3. The low emissivity glass of claim 1, wherein: depositing a first ZrN layer on the first isolation layer specifically comprises the following steps: by adopting a radio frequency sputtering method, the target material is zirconium metal, the nitrogen flow is 50-60sccm, the sputtering power is 900W at 700-.
4. The low emissivity glass of claim 1, wherein: depositing a first Ag layer on the first ZrN layer specifically comprises the following steps: by adopting a radio frequency sputtering method, the target material is metal Ag, the nitrogen flow is 10-20sccm, the sputtering power is 200-300W, the substrate temperature is 300-350 ℃, and the thickness of the first Ag layer is 4-8 nm.
5. The low emissivity glass of claim 1, wherein: depositing a first Cu layer on the first Ag layer specifically includes: by adopting a radio frequency sputtering method, the target material is Cu, the nitrogen flow is 10-20sccm, the sputtering power is 400W under 300-.
6. The low emissivity glass of claim 1, wherein: depositing a first Pd layer on the first Cu layer specifically is: by adopting a radio frequency sputtering method, the target material is metal Pd, the nitrogen flow is 10-20sccm, the sputtering power is 400W under 300-.
7. The low emissivity glass of claim 1, wherein: depositing a second ZrN layer on the first Pd layer specifically includes: by adopting a radio frequency sputtering method, the target material is metal Zr, the nitrogen flow is 80-90sccm, the sputtering power is 900-.
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| CN201810701264.8A CN108793768B (en) | 2018-06-29 | 2018-06-29 | Low-emissivity glass with ZrN layer |
| PCT/CN2018/102063 WO2020000622A1 (en) | 2018-06-29 | 2018-08-24 | Low-emissivity glass comprising zrn layers |
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| CN108793768B true CN108793768B (en) | 2020-07-21 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101691282A (en) * | 2009-10-22 | 2010-04-07 | 李德杰 | Low radiation glass |
| CN102180600A (en) * | 2011-03-13 | 2011-09-14 | 杭州春水镀膜玻璃有限公司 | Temperable low-radiation coated glass and preparation method thereof |
| CN107892489A (en) * | 2017-12-03 | 2018-04-10 | 深圳万佳互动科技有限公司 | A kind of low emissivity glass |
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| JPH02307844A (en) * | 1989-05-22 | 1990-12-21 | Nippon Sheet Glass Co Ltd | Heat ray shielding glass |
| US6881487B2 (en) * | 2002-11-15 | 2005-04-19 | Guardian Industries Corp. | Heat treatable coated articles with zirconium or zirconium nitride layer and methods of making same |
| US8003164B2 (en) * | 2008-09-19 | 2011-08-23 | Guardian Industries Corp. | Method of making a scratch-and etch-resistant coated glass article |
| CN101691281A (en) * | 2009-10-22 | 2010-04-07 | 李德杰 | Low radiation glass taking silica-based material as dielectric layer |
| US8790783B2 (en) * | 2011-03-03 | 2014-07-29 | Guardian Industries Corp. | Barrier layers comprising Ni and/or Ti, coated articles including barrier layers, and methods of making the same |
| CN103895276A (en) * | 2013-10-16 | 2014-07-02 | 信义玻璃工程（东莞）有限公司 | Silver-based low-radiation coated glass |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101691282A (en) * | 2009-10-22 | 2010-04-07 | 李德杰 | Low radiation glass |
| CN102180600A (en) * | 2011-03-13 | 2011-09-14 | 杭州春水镀膜玻璃有限公司 | Temperable low-radiation coated glass and preparation method thereof |
| CN107892489A (en) * | 2017-12-03 | 2018-04-10 | 深圳万佳互动科技有限公司 | A kind of low emissivity glass |
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