CN108780729B - 用于基于电子束的表征工具上的漂移补偿的系统及方法 - Google Patents

用于基于电子束的表征工具上的漂移补偿的系统及方法 Download PDF

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Publication number
CN108780729B
CN108780729B CN201780015907.7A CN201780015907A CN108780729B CN 108780729 B CN108780729 B CN 108780729B CN 201780015907 A CN201780015907 A CN 201780015907A CN 108780729 B CN108780729 B CN 108780729B
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electron
sample stage
alignment
substrate
microscope system
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Chinese (zh)
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CN108780729A (zh
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F·拉斯克
C·西尔斯
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KLA Corp
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KLA Tencor Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/153—Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/1501—Beam alignment means or procedures

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Electron Sources, Ion Sources (AREA)
CN201780015907.7A 2016-03-24 2017-03-20 用于基于电子束的表征工具上的漂移补偿的系统及方法 Active CN108780729B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201662312651P 2016-03-24 2016-03-24
US62/312,651 2016-03-24
US15/269,031 2016-09-19
US15/269,031 US9892885B2 (en) 2016-03-24 2016-09-19 System and method for drift compensation on an electron beam based characterization tool
PCT/US2017/023239 WO2017165308A1 (en) 2016-03-24 2017-03-20 System and method for drift compensation on an electron beam based characterization tool

Publications (2)

Publication Number Publication Date
CN108780729A CN108780729A (zh) 2018-11-09
CN108780729B true CN108780729B (zh) 2020-08-21

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CN201780015907.7A Active CN108780729B (zh) 2016-03-24 2017-03-20 用于基于电子束的表征工具上的漂移补偿的系统及方法

Country Status (7)

Country Link
US (1) US9892885B2 (enExample)
EP (1) EP3433873A4 (enExample)
JP (1) JP6938529B2 (enExample)
KR (1) KR102184032B1 (enExample)
CN (1) CN108780729B (enExample)
TW (1) TWI720154B (enExample)
WO (1) WO2017165308A1 (enExample)

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WO2019217873A1 (en) * 2018-05-10 2019-11-14 Protochips, Inc. Sample support with fiducial indicia
US11373838B2 (en) * 2018-10-17 2022-06-28 Kla Corporation Multi-beam electron characterization tool with telecentric illumination
US11135835B2 (en) * 2018-12-20 2021-10-05 Kateeva, Inc. Ejection control using substrate alignment features and print region alignment features
DE102019200696B4 (de) * 2019-01-21 2022-02-10 Carl Zeiss Smt Gmbh Vorrichtung, Verfahren und Computerprogram zum Bestimmen einer Position eines Elements auf einer fotolithographischen Maske
KR102287441B1 (ko) * 2019-07-03 2021-08-09 주식회사 탑 엔지니어링 스테이지 정렬 장치, 이를 포함하는 도포 장치, 및 이를 이용한 스테이지 정렬 방법
US11902665B2 (en) 2019-08-16 2024-02-13 Protochips, Inc. Automated application of drift correction to sample studied under electron microscope
JP7264539B2 (ja) * 2019-08-16 2023-04-25 プロトチップス，インコーポレイテッド 電子顕微鏡下で研究される試料へのドリフト補正の自動化されたアプリケーション
CN113707522B (zh) * 2021-08-26 2022-07-08 北京中科科仪股份有限公司 固定装置、扫描电镜和电子束曝光机
CN115616017B (zh) * 2022-09-30 2023-11-10 南方科技大学 一种电子光学测试平台装置
CN119470504A (zh) * 2025-01-14 2025-02-18 华东师范大学 一种实时校正透射电子显微镜图像漂移的方法以及控制模块

Citations (2)

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EP1202320A2 (en) * 2000-10-27 2002-05-02 Hitachi, Ltd. Method and apparatus for charged particle beam microscopy
CN104272194A (zh) * 2012-03-08 2015-01-07 迈普尔平版印刷Ip有限公司 处理诸如晶圆的靶材的光刻系统和方法

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JPS60201626A (ja) * 1984-03-27 1985-10-12 Canon Inc 位置合わせ装置
US5424548A (en) * 1993-09-21 1995-06-13 International Business Machines Corp. Pattern specific calibration for E-beam lithography
JP3666267B2 (ja) * 1998-09-18 2005-06-29 株式会社日立製作所 荷電粒子ビーム走査式自動検査装置
US7462848B2 (en) * 2003-10-07 2008-12-09 Multibeam Systems, Inc. Optics for generation of high current density patterned charged particle beams
US7332729B1 (en) * 2004-06-18 2008-02-19 Novelx, Inc. System and method for multiple electron, ion, and photon beam alignment
JP4477434B2 (ja) * 2004-06-29 2010-06-09 キヤノン株式会社 荷電粒子線露光装置およびデバイス製造方法
JP4638800B2 (ja) 2005-10-27 2011-02-23 株式会社日立ハイテクノロジーズ 走査電子顕微鏡装置における機差管理システムおよびその方法
JP4741408B2 (ja) * 2006-04-27 2011-08-03 株式会社荏原製作所 試料パターン検査装置におけるｘｙ座標補正装置及び方法
US7825386B2 (en) 2006-10-25 2010-11-02 Hermes-Microvision, Inc. System and method for a charged particle beam
JP5843610B2 (ja) * 2011-12-28 2016-01-13 キヤノン株式会社 描画装置及び物品の製造方法
JP2013183017A (ja) * 2012-03-01 2013-09-12 Canon Inc 描画装置、基準素子、及び物品製造方法
JP2014168031A (ja) * 2013-01-30 2014-09-11 Canon Inc リソグラフィ装置、リソグラフィ方法及び物品製造方法
DE112014005893B4 (de) * 2013-12-21 2023-02-16 Kla-Tencor Corporation Ein Verfahren zum Messen von Positionen von Strukturen auf einer Maske und dadurch Bestimmen von Fehlern bei der Herstellung von Masken
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JP6689602B2 (ja) * 2014-12-22 2020-04-28 カール ツァイス マイクロスコーピー エルエルシー 荷電粒子ビームシステム及び方法

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Publication number Priority date Publication date Assignee Title
EP1202320A2 (en) * 2000-10-27 2002-05-02 Hitachi, Ltd. Method and apparatus for charged particle beam microscopy
CN104272194A (zh) * 2012-03-08 2015-01-07 迈普尔平版印刷Ip有限公司 处理诸如晶圆的靶材的光刻系统和方法

Also Published As

Publication number Publication date
JP6938529B2 (ja) 2021-09-22
US9892885B2 (en) 2018-02-13
US20170278666A1 (en) 2017-09-28
KR20180119699A (ko) 2018-11-02
JP2019509609A (ja) 2019-04-04
KR102184032B1 (ko) 2020-11-27
CN108780729A (zh) 2018-11-09
EP3433873A1 (en) 2019-01-30
TW201801124A (zh) 2018-01-01
EP3433873A4 (en) 2019-11-20
TWI720154B (zh) 2021-03-01
WO2017165308A1 (en) 2017-09-28

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