CN108779419A - The cleaning method of cleaning agent for electronic materials composition, cleaning agent stoste and electronic material - Google Patents
The cleaning method of cleaning agent for electronic materials composition, cleaning agent stoste and electronic material Download PDFInfo
- Publication number
- CN108779419A CN108779419A CN201680070975.9A CN201680070975A CN108779419A CN 108779419 A CN108779419 A CN 108779419A CN 201680070975 A CN201680070975 A CN 201680070975A CN 108779419 A CN108779419 A CN 108779419A
- Authority
- CN
- China
- Prior art keywords
- water
- cleaning agent
- tertiary amine
- cleaning
- ingredient
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 111
- 239000012459 cleaning agent Substances 0.000 title claims abstract description 78
- 238000000034 method Methods 0.000 title claims abstract description 59
- 238000004140 cleaning Methods 0.000 title claims abstract description 54
- 239000012776 electronic material Substances 0.000 title claims abstract description 49
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 88
- 239000002245 particle Substances 0.000 claims abstract description 52
- 150000003512 tertiary amines Chemical class 0.000 claims abstract description 52
- 238000009835 boiling Methods 0.000 claims abstract description 17
- 239000012298 atmosphere Substances 0.000 claims abstract description 13
- 239000002904 solvent Substances 0.000 claims description 28
- 229910052799 carbon Inorganic materials 0.000 claims description 14
- 125000004432 carbon atom Chemical group C* 0.000 claims description 13
- 125000000217 alkyl group Chemical group 0.000 claims description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 8
- 239000001257 hydrogen Substances 0.000 claims description 8
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 8
- 229920000768 polyamine Polymers 0.000 claims description 3
- 150000001412 amines Chemical class 0.000 claims description 2
- 239000004615 ingredient Substances 0.000 abstract description 90
- 125000001302 tertiary amino group Chemical group 0.000 abstract 1
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 40
- 238000002360 preparation method Methods 0.000 description 38
- 229910052757 nitrogen Inorganic materials 0.000 description 35
- 238000005342 ion exchange Methods 0.000 description 28
- 238000001035 drying Methods 0.000 description 24
- 238000002474 experimental method Methods 0.000 description 23
- 238000003760 magnetic stirring Methods 0.000 description 21
- 238000011156 evaluation Methods 0.000 description 19
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Natural products CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 18
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 15
- 235000019441 ethanol Nutrition 0.000 description 14
- 239000007788 liquid Substances 0.000 description 14
- 238000000227 grinding Methods 0.000 description 13
- 238000002156 mixing Methods 0.000 description 13
- 229910001220 stainless steel Inorganic materials 0.000 description 13
- 239000010935 stainless steel Substances 0.000 description 13
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical group CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 12
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 12
- 239000003643 water by type Substances 0.000 description 12
- 239000000243 solution Substances 0.000 description 11
- SZNYYWIUQFZLLT-UHFFFAOYSA-N 2-methyl-1-(2-methylpropoxy)propane Chemical compound CC(C)COCC(C)C SZNYYWIUQFZLLT-UHFFFAOYSA-N 0.000 description 10
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 9
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- -1 azo-compound Chemical class 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000000126 substance Substances 0.000 description 8
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 7
- 239000003599 detergent Substances 0.000 description 7
- LCZVSXRMYJUNFX-UHFFFAOYSA-N 2-[2-(2-hydroxypropoxy)propoxy]propan-1-ol Chemical compound CC(O)COC(C)COC(C)CO LCZVSXRMYJUNFX-UHFFFAOYSA-N 0.000 description 6
- BFSVOASYOCHEOV-UHFFFAOYSA-N 2-diethylaminoethanol Chemical compound CCN(CC)CCO BFSVOASYOCHEOV-UHFFFAOYSA-N 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- ZAFNJMIOTHYJRJ-UHFFFAOYSA-N Diisopropyl ether Chemical compound CC(C)OC(C)C ZAFNJMIOTHYJRJ-UHFFFAOYSA-N 0.000 description 6
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 6
- 239000003795 chemical substances by application Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 238000005498 polishing Methods 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- POLCUAVZOMRGSN-UHFFFAOYSA-N dipropyl ether Chemical compound CCCOCCC POLCUAVZOMRGSN-UHFFFAOYSA-N 0.000 description 5
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- AZQZJVVZBGCHSV-UHFFFAOYSA-N 2-(3,5-dimethylpyrazol-1-yl)-n-[2-(3,5-dimethylpyrazol-1-yl)ethyl]ethanamine Chemical compound N1=C(C)C=C(C)N1CCNCCN1C(C)=CC(C)=N1 AZQZJVVZBGCHSV-UHFFFAOYSA-N 0.000 description 4
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 150000002170 ethers Chemical class 0.000 description 4
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 description 4
- 229960004194 lidocaine Drugs 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- WAEVWDZKMBQDEJ-UHFFFAOYSA-N 2-[2-(2-methoxypropoxy)propoxy]propan-1-ol Chemical compound COC(C)COC(C)COC(C)CO WAEVWDZKMBQDEJ-UHFFFAOYSA-N 0.000 description 3
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical class NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 description 3
- 239000004471 Glycine Substances 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 235000002597 Solanum melongena Nutrition 0.000 description 3
- 244000061458 Solanum melongena Species 0.000 description 3
- 150000001298 alcohols Chemical class 0.000 description 3
- 238000011088 calibration curve Methods 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 3
- 238000004821 distillation Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- TUEYHEWXYWCDHA-UHFFFAOYSA-N ethyl 5-methylthiadiazole-4-carboxylate Chemical compound CCOC(=O)C=1N=NSC=1C TUEYHEWXYWCDHA-UHFFFAOYSA-N 0.000 description 3
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 3
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 2
- 125000003006 2-dimethylaminoethyl group Chemical group [H]C([H])([H])N(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- NNJVILVZKWQKPM-UHFFFAOYSA-N Lidocaine Chemical compound CCN(CC)CC(=O)NC1=C(C)C=CC=C1C NNJVILVZKWQKPM-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000007792 addition Methods 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000003945 anionic surfactant Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 2
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 125000004177 diethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000004817 gas chromatography Methods 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- IPMWIVQWGGRTLD-UHFFFAOYSA-N n'-[2-(propylamino)ethyl]ethane-1,2-diamine Chemical class CCCNCCNCCN IPMWIVQWGGRTLD-UHFFFAOYSA-N 0.000 description 2
- KJOMYNHMBRNCNY-UHFFFAOYSA-N pentane-1,1-diamine Chemical compound CCCCC(N)N KJOMYNHMBRNCNY-UHFFFAOYSA-N 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 2
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical compound CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 2
- 238000005488 sandblasting Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- QWOZZTWBWQMEPD-UHFFFAOYSA-N 1-(2-ethoxypropoxy)propan-2-ol Chemical compound CCOC(C)COCC(C)O QWOZZTWBWQMEPD-UHFFFAOYSA-N 0.000 description 1
- LORVPHHKJFSORQ-UHFFFAOYSA-N 1-[1-(1-butoxypropan-2-yloxy)propan-2-yloxy]propan-2-ol Chemical compound CCCCOCC(C)OCC(C)OCC(C)O LORVPHHKJFSORQ-UHFFFAOYSA-N 0.000 description 1
- GQCZPFJGIXHZMB-UHFFFAOYSA-N 1-tert-Butoxy-2-propanol Chemical compound CC(O)COC(C)(C)C GQCZPFJGIXHZMB-UHFFFAOYSA-N 0.000 description 1
- WMDZKDKPYCNCDZ-UHFFFAOYSA-N 2-(2-butoxypropoxy)propan-1-ol Chemical compound CCCCOC(C)COC(C)CO WMDZKDKPYCNCDZ-UHFFFAOYSA-N 0.000 description 1
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 1
- COBPKKZHLDDMTB-UHFFFAOYSA-N 2-[2-(2-butoxyethoxy)ethoxy]ethanol Chemical compound CCCCOCCOCCOCCO COBPKKZHLDDMTB-UHFFFAOYSA-N 0.000 description 1
- WFSMVVDJSNMRAR-UHFFFAOYSA-N 2-[2-(2-ethoxyethoxy)ethoxy]ethanol Chemical compound CCOCCOCCOCCO WFSMVVDJSNMRAR-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- YEYKMVJDLWJFOA-UHFFFAOYSA-N 2-propoxyethanol Chemical compound CCCOCCO YEYKMVJDLWJFOA-UHFFFAOYSA-N 0.000 description 1
- NTKBNCABAMQDIG-UHFFFAOYSA-N 3-butoxypropan-1-ol Chemical compound CCCCOCCCO NTKBNCABAMQDIG-UHFFFAOYSA-N 0.000 description 1
- 229920001817 Agar Polymers 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 238000006579 Tsuji-Trost allylation reaction Methods 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000008272 agar Substances 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 150000003973 alkyl amines Chemical class 0.000 description 1
- 150000001413 amino acids Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 239000002280 amphoteric surfactant Substances 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 239000013556 antirust agent Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000003125 aqueous solvent Substances 0.000 description 1
- 150000004984 aromatic diamines Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- WEHWNAOGRSTTBQ-UHFFFAOYSA-N dipropylamine Chemical compound CCCNCCC WEHWNAOGRSTTBQ-UHFFFAOYSA-N 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 229940031098 ethanolamine Drugs 0.000 description 1
- 125000000031 ethylamino group Chemical group [H]C([H])([H])C([H])([H])N([H])[*] 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 125000001153 fluoro group Chemical class F* 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011799 hole material Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 235000013372 meat Nutrition 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- BTQYXSSZVKPNLP-UHFFFAOYSA-N n'-[2-(propan-2-ylamino)ethyl]ethane-1,2-diamine Chemical class CC(C)NCCNCCN BTQYXSSZVKPNLP-UHFFFAOYSA-N 0.000 description 1
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical group CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N n-propyl alcohol Natural products CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- OXJFAFOUWFQCER-UHFFFAOYSA-N octane-4,4-diamine Chemical class CCCCC(N)(N)CCC OXJFAFOUWFQCER-UHFFFAOYSA-N 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000003002 pH adjusting agent Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- CIBMHJPPKCXONB-UHFFFAOYSA-N propane-2,2-diol Chemical compound CC(C)(O)O CIBMHJPPKCXONB-UHFFFAOYSA-N 0.000 description 1
- 239000008213 purified water Substances 0.000 description 1
- 125000001453 quaternary ammonium group Chemical group 0.000 description 1
- 239000002516 radical scavenger Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000008399 tap water Substances 0.000 description 1
- 235000020679 tap water Nutrition 0.000 description 1
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical class NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 150000003672 ureas Chemical class 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Emergency Medicine (AREA)
- Detergent Compositions (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The cleaning agent for electronic materials composition of the present invention is the cleansing composition of tertiary amine (A) and water (B) containing azeotrope with water, the boiling point of the tertiary amine (A) is 130~250 DEG C at 1 atmosphere pressure, weight ratio (%) of the tertiary amine (A) in the tertiary amine (A) of the cleansing composition and the total of the water (B), less than or equal to weight ratio of the tertiary amine (A) in the azeotropic mixture being made of tertiary amine (A) and water (B).The cleansing composition can also remove the particle being attached on electronic material using considerably less amount (low concentration), and can provide it is a kind of will not make not being used to wash off the rinsing process of cleaning agent ingredient the remaining cleaning agent for electronic materials composition of the residue of cleaning agent, cleaning agent stoste and the cleaning process comprising electronic material cleaning method.
Description
Technical field
The present invention relates to cleaning agent for electronic materials composition, the cleaning methods of cleaning agent stoste and electronic material.
Background technology
In recent years, electronics industry was with to informationization, the transformation of energy-saving, low-carbonization society, and made electronic component
Miniaturization, high performance rapidly develop.Moreover, in this context, it is very big to the technique influence for grinding, planarizing.
For example, in the field in relation to semiconductor, in the photo-mask process when manufacturing the number IC such as CMOS or TTL, with standard
Really and for the purpose of efficiently transferring fine circuit pattern, for being formed by silica (SiO on silicon2), silicon nitride
(Si3N4), the insulation films such as phosphorosilicate glass (PSG) are ground, planarize.In addition, in processing hard disk drive (Hard disk
Drive, HDD) etc. in the field of disks, in order to control the distance between magnetic disk surface and magnetic head at nanoscale, and in order to
Packing density and reliability are had both, and magnetic disk surface is ground, is planarized.Also, in processing semiconductor lighting (LED) etc.
Optical device and high-power diode, transistor constant power device field in, by grinding process, to sapphire (Al2O3)、
The bumps of the substrate surfaces such as silicon carbide (SiC), gallium nitride (GaN), deformation, pollution part are removed, to make properties of product
It is improved with yield rate.
Above-mentioned grinding method has following method etc.：Using being dispersed with silica (SiO in aqueous solvent etc.2), oxygen
Change aluminium (Al2O3) or ceria (CeO2) etc. particles and the chemical mechanical grinding (Chemical of grinding agent (slurry) that is formed
Mechanical Polishing,CMP)；With by having spread the progress such as brush, gasket, wheel after the hard particles such as diamond
The method of mechanical lapping.
However, even if can adhere to if a large amount of abrasive grain and lapping rejects etc. (hereinafter referred to as particle) in any one method
On electronic material after grinding, lead to the decline of performance and yield rate.Therefore, being to the cleaning process that they are removed must
Indispensable, the task of top priority is to develop cleansing composition that is a kind of functional and being effectively removed particle.About this clear
Detergent composition has been disclosed for example cleansing composition described as follows.
Disclosed cleansing composition contains fluorine class anion surfactant and quaternary ammonium hydroxide in patent document 1
Object, and contain the alkanolamine as any ingredient.According to identical document, show the cleansing composition suitable for removal
Particle on semiconductor wafer surface.But the cleansing composition contains non-volatile surfactant etc., it is believed that clear
It washes after process, it is necessary to be useful for washing off their rinsing process.
Cleansing composition disclosed in patent document 2 contains alkyl amine, aromatic diamines, urea class, thiocarbamide
Class, azo-compound, nitrogen-containing heterocycle compound and specific amino acids.According to identical document, show that the cleaning agent combines
Object is suitable for the copper oxide and particle on the semiconductor surface removed after implementing thin copper film.But the cleansing composition
Containing non-volatile acid (such as glycine) etc., it is believed that after cleaning process, it is necessary to be useful for washing off theirs
Rinsing process.
Disclosed cleansing composition contains glycine, acrylic polymer, specific nonionic in patent document 3
Type compound and water.According to identical document, show that the cleansing composition comes from chemical mechanical grinding suitable for removal
(CMP) particle of slurry is used.But the cleansing composition contains non-volatile acid (such as glycine) and polymer etc.,
It is believed that after cleaning process, it is necessary to be useful for washing off their rinsing process.
Existing technical literature
Patent document
Patent document 1：No. 3624809 bulletins of Japanese Patent No.
Patent document 2：No. 4821082 bulletins of Japanese Patent No.
Patent document 3：Japanese Unexamined Patent Publication 2008-147449 bulletins
Invention content
Problems to be solved by the invention
The present invention can provide a kind of can also be removed using considerably less amount (low concentration) and be attached on cleaning object
Particle and even if not be used for wash off cleaning agent ingredient rinsing process will not make the remaining electronics of the residue of cleaning agent
The cleaning method of material cleansing composition, cleaning agent stoste and electronic material.
Means for solving the problems
The inventors of the present invention have made intensive studies in order to solve the above problems, as a result, it has been found that by using at a specific ratio
The tertiary amine (A) and water (B) of azeotrope with water, can solve the above subject, and complete the present invention.I.e., the present invention is item below
Mesh 1~9.
A kind of 1. cleaning agent for electronic materials composition of project, the cleansing composition contain the tertiary amine of azeotrope with water
(A) and water (B), which is characterized in that the boiling point of the tertiary amine (A) is at 1 atmosphere pressure 130~250 DEG C, and tertiary amine (A) is in institute
It states the weight ratio (%) in the total of the tertiary amine (A) and the water (B) in cleansing composition, be less than or equal to tertiary amine (A)
Weight ratio in the azeotropic mixture being made of tertiary amine (A) and water (B).
Cleaning agent for electronic materials composition of the project 2. according to above-mentioned project 1, which is characterized in that the cleaning agent
The composition also di-alcohols solvent (C) indicated by general formula (1) containing azeotrope with water, general formula (1)：R1-O-[CH2-CH(X)-
O]n- H, (in general formula (1), R1Indicate that carbon atom number is 1~4 alkyl, n indicates that 1~3, X indicates hydrogen or methyl), described two
The boiling point of first alcohols solvent (C) is 120~275 DEG C at 1 atmosphere pressure, and di-alcohols solvent (C) is combined in the cleaning agent
The di-alcohols solvent (C) in object and the weight ratio (%) in the total of the water (B) are less than or equal to di-alcohols solvent
(C) weight ratio in the azeotropic mixture being made of di-alcohols solvent (C) and water (B).
Cleaning agent for electronic materials composition of the project 3. according to above-mentioned project 1 or 2, which is characterized in that the uncle
Amine (A) be the monoamine (A1) indicated by general formula (2) and the polyamine (A2) that is indicated by general formula (3) in any one more than, general formula
(2)：(R2)R3N-CH2- CH (Y)-OH, (in general formula (2), R2And R3Indicate that identical or different carbon atom number is 1~3 respectively
Alkyl, Y indicates hydrogen or methyl)；General formula (3)：(R4)R5N-C2H4-Z-C2H4-NR6(R7), (in general formula (3), R4、R5、R6With
R7The alkyl that identical or different carbon atom number is 1~3, Z expressions-CH are indicated respectively2-、-(CH2)2,-O- ,-NH- or-N
(CH3)-)。
Cleaning agent for electronic materials composition of the project 4. according to any one of above-mentioned project 1 to 3, feature exist
In, weight ratio (A/ (A+B)) of the tertiary amine (A) in the total of the tertiary amine (A) and the water (B) be 1/100000 with
On.
Cleaning agent for electronic materials composition of the project 5. according to any one of above-mentioned project 2 to 4, feature exist
In, the total of the tertiary amine (A) and the di-alcohols solvent (C), in the tertiary amine (A) and the water (B) and the binary
Weight ratio ((A+C)/(A+B+C)) in the total of alcohols solvent (C) is 1/100000 or more.
A kind of 6. cleaning agent stoste of project is used containing the electronic material being used to prepare described in any one of above-mentioned project 1 to 5
The tertiary amine (A) and the water (B) of cleansing composition.
The cleaning method of 7. a kind of electronic material of project, which is characterized in that the method includes the scavenger of electronic material
The cleaning process of sequence, the electronic material has used the cleaning agent for electronic materials described in any one of above-mentioned project 1 to 5 to combine
Object.
The cleaning method of electronic material of the project 8. according to above-mentioned project 7, which is characterized in that the method does not include
Rinsing process.
The cleaning method of electronic material of the project 9. according to above-mentioned project 7 or 8, which is characterized in that the method packet
Particle removing step containing electronic material.
Invention effect
According to the present invention it is possible to which providing a kind of can also be removed using considerably less amount (low concentration) is attached to electronics material
Particle on material and the residue of cleaning agent will not be made remaining not being used to wash off the rinsing process of cleaning agent ingredient
The cleaning method of cleaning agent for electronic materials composition, cleaning agent stoste and electronic material.
The cleansing composition of the present invention contains the tertiary amine (A) and water (B) of azeotrope with water, since tertiary amine (A) is described clear
The tertiary amine (A) in detergent composition and the weight ratio (%) in the total of the water (B), be less than or equal to tertiary amine (A) by
Weight ratio in the azeotropic mixture that tertiary amine (A) and water (B) are constituted, thus, for example under conditions of 50 DEG C~150 DEG C or so,
Even if if the short time drying for carrying out a few minutes~dozens of minutes can play the role of that the remaining effect of the residue of cleaning agent will not be made
Fruit, so safety and productivity are excellent.
In addition, the cleansing composition also di-alcohols indicated by general formula (1) containing azeotrope with water in the present invention is molten
In the case of agent (C), the general formula (1)：R1-O-[CH2-CH(X)-O]n- H, (in general formula (1), R1Indicate that carbon atom number is 1
~4 alkyl, n indicate that 1~3, X indicates hydrogen or methyl), since di-alcohols solvent (C) is in the cleansing composition
Weight ratio (%) in the total of the di-alcohols solvent (C) and the water (B) exists less than or equal to di-alcohols solvent (C)
Weight ratio in the azeotropic mixture be made of di-alcohols solvent (C) and water (B), thus, for example at 50 DEG C~150 DEG C or so
Under conditions of, even if can be played if the short time drying of a few minutes~dozens of minutes will not be such that the residue of cleaning agent remains
Function and effect, so safety and productivity are excellent.
Description of the drawings
Fig. 1 is the definition graph of an example for the particle minimizing technology for indicating cleansing composition.
Specific implementation mode
The cleansing composition of the present invention contains the tertiary amine (A) (hereinafter also referred to (A) ingredient) and water (B) of azeotrope with water
(hereinafter also referred to (B) ingredient), (under normal pressure, normal atmosphere pressure) is 130~250 DEG C at 1 atmosphere pressure for the boiling point of tertiary amine,
Weight ratio (%) of the tertiary amine (A) in the total of the tertiary amine (A) and the water (B) is less than or equal to tertiary amine (A) by tertiary amine
(A) and the weight ratio in the azeotropic mixture that constitutes of water (B) (mixing ratio of tertiary amine is less than or equal to group with the azeotropic mixture of water
At than).If the boiling point of tertiary amine (A) is less than 130 DEG C at 1 atmosphere pressure, the stoste of the cleansing composition has the danger caught fire
It is dangerous, and the processing such as conveying, preservation is made to become difficult.On the other hand, if the boiling point of tertiary amine (A) is at 1 atmosphere pressure more than 250
DEG C, then it is difficult to form the azeotropic mixture with water, and drying property is made to be deteriorated.Therefore, excellent from the viewpoint of the flammable and drying property
It is selected as 140~240 DEG C or so, more preferably 150~230 DEG C or so.
In the cleansing composition of the present invention, weight of the tertiary amine (A) in the total of the tertiary amine (A) and the water (B)
It measures than (%), be less than or equal to weight ratio of the tertiary amine (A) in the azeotropic mixture being made of tertiary amine (A) and water (B).By the tertiary amine
(A) and the azeotropic mixture of water (B) composition refers to that the mixture being made of tertiary amine (A) and water (B) is to form azeotropic mixture
The composition of (constant boiling point mixture).About when the mixture being made of the tertiary amine (A) and water (B) forms azeotropic mixture
, the weight ratio that (A) is in azeotropic mixture finds out in the following way in this way：It is analyzed to mixed using gas chromatography
It is 100 DEG C of fractions below to close the boiling point that solution carries out multistage distillation and obtains, and is quantified according to Absolute Calibration curve method
To find out weight ratio.
As above-mentioned (A) ingredient, as long as the tertiary amine of azeotrope with water and its boiling point is 130~250 at 1 atmosphere pressure
DEG C or so, then it is not particularly limited and various well known ingredients can be used.Specifically, from particle removal ability and drying
Property from the viewpoint of, the monoamine (A1) (hereinafter also referred to (A1) ingredient) that is particularly preferably indicated by the following general formula (2) and by following logical
The polyamine (A2) (hereinafter also referred to (A2) ingredient) that formula (3) indicates.(A) ingredient can contain in (A1) ingredient or (A2) ingredient
Any one ingredient can also contain there are two types of ingredient.
General formula (2)：(R2)R3N-CH2-CH(Y)-OH
(in general formula (2), R2And R3Indicate that identical or different carbon atom number is 1~3 alkyl respectively, Y indicate hydrogen or
Methyl.)
General formula (3)：(R4)R5N-C2H4-Z-C2H4-NR6(R7)
(in general formula (3), R4、R5、R6And R7The alkyl that identical or different carbon atom number is 1~3, Z tables are indicated respectively
Show-CH2-、-(CH2)2,-O- ,-NH- or-N (CH3)-。)
In the general formula (2), about R2And R3Alkyl, preferably carbon atom number be 2~3, more preferably 2.Moreover, Y is excellent
It is selected as hydrogen.
In the general formula (3), about R4、R5、R6And R7Alkyl, preferably carbon atom number be 1~2, more preferably 1.And
And Z is preferably-CH2-、-(CH2)2Or-O-, more preferably-CH2Or-(CH2)2-。
As above-mentioned (A1) ingredient, such as it can enumerate that 2- (dimethylamino) ethyl alcohol, 2- (lignocaine) ethyl alcohol, (two is different by 2-
Third amino) ethyl alcohol, 2- (two n-propylamine bases) ethyl alcohol, 1- dimethylamino -2- propyl alcohol, 1- lignocaine -2- propyl alcohol, 1- diisopropyl ammonias
Bis- n-propylamine base -2- propyl alcohol of base -2- propyl alcohol and 1- etc..These ingredients can be used alone or be applied in combination two kinds with
On.Wherein, especially from from the viewpoint of particle removal ability and fire hazard are low, be preferably selected from 2- (lignocaine) ethyl alcohol,
At least one of 2- (diisopropylaminoethyl) ethyl alcohol and 1- lignocaine -2- propyl alcohol.
As above-mentioned (A2) ingredient, such as N, N, N can be enumerated ', N '-tetramethyls pentanediamine, N, N, N ', N '-tetraethyls penta
Diamines, N, N, N ', N '-tetra isopropyls pentanediamine, N, N, N ' ,-four n-propyl pentanediamines of N ', N, N, N ', N '-tetramethyls oneself two
Amine, N, N, N ', N '-tetraethyls hexamethylene diamine, N, N, N ', N '-tetra isopropyls hexamethylene diamine, N, N, N ' ,-four n-propyl hexamethylene diamines of N ',
Bis- (2- dimethyl aminoethyls) ethers, bis- (2- diethylaminos ethyl) ethers, bis- (2- diisopropylaminoethyls ethyl) ethers, bis- (2-
Diη-propyl amino-ethyl) ether, 1,1,7,7 ,-tetramethyl diethylenetriamines, 1,1,7,7 ,-tetraethyl diethylenetriamines,
1,1,7,7 ,-tetra isopropyl diethylenetriamines, 1,1,7,7 ,-four n-propyl diethylenetriamines, N, N, N ' ,-five first of N ", N "
Base diethylenetriamines, 4- methyl-1s, 1,7,7 ,-tetraethyl diethylenetriamines, 4- methyl-1s, 1,7,7 ,-tetra isopropyl two
Ethylenetriamine and 4- methyl-1s, 1,7,7 ,-four n-propyl diethylenetriamines etc..These ingredients can be used alone or
Person is applied in combination two or more.Wherein, especially from from the viewpoint of the viewpoint and fire hazard of particle removal ability are low, preferably
Selected from N, N, N ', N ' -4-methyl hexamethylene diamines, bis- (2- dimethyl aminoethyls) ethers and N, N, N ', the sub- second of N ", N "-pentamethyl two
At least one of base triamine.
As above-mentioned (B) ingredient, ultra-pure water, pure water, purified water, distilled water, ion exchange water and tap water etc. can be enumerated.
From the viewpoint of particle removal, cleansing composition of the invention is preferably that tertiary amine (A) is in above-mentioned (A) ingredient
Weight ratio (A/ (A+B)) in the total of (B) ingredient is 1/100000 or more.More preferably 1/80000 or more, it is further excellent
It is selected as 1/20000 or more, is still more preferably 1/5000 or more.
From the viewpoint of particle removal, preferably, cleansing composition of the invention contain azeotrope with water by general formula
(1) the di-alcohols solvent (C) (hereinafter also referred to (C) ingredient) indicated, general formula (1)：R1-O-[CH2-CH(X)-O]n- H, (
In general formula (1), R1Indicate that carbon atom number is 1~4 alkyl, n indicates that 1~3, X indicates hydrogen or methyl), the di-alcohols is molten
The boiling point of agent (C) is 120~275 DEG C at 1 atmosphere pressure, institute of the di-alcohols solvent (C) in the cleansing composition
State weight ratio (%) in the total of di-alcohols solvent (C) and the water (B), be less than or equal to di-alcohols solvent (C) by
Weight ratio in the azeotropic mixture that di-alcohols solvent (C) and water (B) are constituted.
The azeotropic mixture being made of above-mentioned di-alcohols solvent (C) and water (B) refers to the mixing being made of (C) and (B)
Object is the composition to form azeotropic mixture (constant boiling point mixture).It is constituted about by the di-alcohols solvent (C) and water (B)
Mixture when forming azeotropic mixture, weight ratio that (C) is in azeotropic mixture is found out in the following way in this way：
Multistage distillation is carried out to mixed solution and the boiling point that obtains is 100 DEG C of fractions below using gas chromatography to analyze, and root
Quantitatively weight ratio is found out according to Absolute Calibration curve method.
In the general formula (1), about R1Alkyl, preferably carbon atom number be 1~3, more preferably 1~2.Moreover, X is excellent
It is selected as methyl.In addition, n is preferably 2~3, more preferably 3.
As above-mentioned (C) ingredient, such as glycol monoethyl ether, ethylene glycol monoethyl ether, ethylene glycol propyl ether, second can be enumerated
Glycol mono-iso-propyl ether, ethylene glycol mono-n-butyl ether, ethylene glycol list isobutyl ether, the secondary butyl ether of ethylene glycol list, the tertiary butyl ether of ethylene glycol list, the third two
Alcohol monomethyl ether, dihydroxypropane single-ether, propylene glycol list positive propyl ether, monoisopropyl ether, propylene glycol mono-n-butyl ether, propylene glycol Dan Yi
Butyl ether, the secondary butyl ether of propylene glycol list, propylene glycol t-butyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol list are just
Propyl ether, diethylene glycol list isopropyl ether, diethylene glycol mono-n-butyl ether, diethylene glycol list isobutyl ether, the secondary butyl ether of diethylene glycol list, diethyl
The tertiary butyl ether of glycol list, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether, dipropylene glycol list positive propyl ether, dipropylene glycol list isopropyl ether,
Dipropylene glycol mono-n-butyl ether, dipropylene glycol list isobutyl ether, the secondary butyl ether of dipropylene glycol list, the tertiary butyl ether of dipropylene glycol list, triethylene glycol
Monomethyl ether, Triethylene glycol ethyl ether, triethylene glycol list positive propyl ether, triethylene glycol list isopropyl ether, triethylene glycol mono-n-butyl ether, three second
Glycol list isobutyl ether, the secondary butyl ether of triethylene glycol list, the tertiary butyl ether of triethylene glycol list, Tripropylene glycol monomethyl Ether, tripropylene glycol list ether,
Tripropylene glycol list positive propyl ether, tripropylene glycol list isopropyl ether, tripropylene glycol mono-n-butyl ether, tripropylene glycol list isobutyl ether, tripropylene glycol
Single secondary butyl ether, the tertiary butyl ether of tripropylene glycol list etc..These ingredients can be used alone or be applied in combination two or more.Its
In, especially from from the viewpoint of particle removal ability and fire hazard are low, it is preferably selected from diethylene glycol mono-n-butyl ether, dipropyl two
At least one of alcohol monomethyl ether and Tripropylene glycol monomethyl Ether.
In addition, from from the viewpoint of drying property improves and cleaning agent stoste can be inhibited to catch fire, the boiling point of (C) ingredient is at 1
It is 120~275 DEG C or so under atmospheric pressure, preferably 130~260 DEG C or so, further preferably 140~250 DEG C or so.
In addition, in the case of addition (C) ingredient, from the viewpoint of particle removal, cleansing composition of the invention
Preferably, (A) ingredient and (C) ingredient, the weight ratio ((A+ in the total of above-mentioned (A) ingredient and (B) ingredient and (C) ingredient
C)/(A+B+C)) it is 1/100000 or more.More preferably 1/80000 or more, further preferably 1/20000 or more, more into one
Step preferably 1/5000 or more.
The total ratio or (A) ingredient, (B) of (A) ingredient and (B) ingredient in the cleansing composition of the present invention
The total ratio of ingredient and (C) ingredient is preferably 80 weight % or more, more preferably 90 weight % or more, and further preferably 95
Weight % or more is still more preferably 98 weight % or more, most preferably 100 weight %.
The cleansing composition of the present invention is by mixing (A) ingredient and (B) ingredient and root with various well known means
It is prepared according to (C) ingredient of needs.
The cleansing composition of the present invention is used as to the cleaning agent of electronic material.Electronic material includes：Such as photomask, light
Learn the glass processings products such as lens, vacuum discharge tube, touch panel, display equipment glass；Metal mask, pallet, lead frame,
The intermetallic composite coatings product such as disk, cooling fin；Epoxy glass substrate, polyimide substrate, phenolic aldehyde paper base plate, plastic mould parts
Equal resins converted products；Silicon (Si), sapphire (Al2O3), silicon carbide (SiC), diamond (C), gallium nitride (GaN), gallium phosphide
(GaP), the chips such as GaAs (GaAs), indium phosphide (InP) and they are cut with (slice, cutting etc.), grinding (is ground at the back side
Cut, sandblasting etc.), chamfering (chamfering, roller etc.), the converted products for grinding (grinding, polishing, polishing etc.)；And then to these objects
Product used fixture, carrier, chamber etc. when being processed, install, welding, cleaning, carrying.
In addition, as electronic material, can enumerate printed circuit board, flexible distributing board, ceramic wiring plate, semiconductor element,
The electronic components such as semiconductor packages, magnetic medium, power module and camera model；And then these articles are being processed, are being pacified
Used fixture, carrier, chamber etc. when dress, welding, cleaning, carrying.
In the range of not influencing drying property, various well known additions can be mixed in the cleansing composition of the present invention
Agent.Specifically, as additive, nonionic surfactant, anion surfactant, cation surface activating can be enumerated
Agent, amphoteric surfactant, high molecular surfactant, chelating agent, antioxidant, antirust agent, hole sealing processing agent, pH adjusting agent
With antifoaming agent etc..
By being diluted with water, can prepare above-mentioned cleaning agent for electronic materials composition cleaning agent stoste be also the present invention
One of.In the cleaning agent stoste of the present invention, concentrate to cleaning the effective ingredient of particle, it is defeated so as to be effectively performed
It send, preserve.In addition, also there is excellent cleaning performance since even the cleaning agent stoste is a small amount of, water is used when in use
When dilution, the weight ratio of water can be improved, even if being also excellent from the viewpoint of reduce cost, carrying capacity of environment.
Including the cleaning method of the cleaning process of electronic material is also one of present invention, the cleaning process has used this hair
Bright cleansing composition.Cleaning process is that the cleansing composition of the present invention is made to be connect with the electronic material for being attached to particle
It touches, and the process for washing off particle.The cleaning method can not include rinsing process, and the rinsing process is used for by various known
Detergent and cleaning agent ingredient is washed off from electronic material.Thereby, it is possible to reduce cost and time needed for rinsing process.It is right
Particle as cleaning object is not particularly limited, but as representational particle, can enumerate for example in chemical mechanical grinding
(CMP) silica (SiO and used in mechanical lapping2), aluminium oxide (Al2O3), ceria (CeO2) etc. particles；?
To the hard particles such as diamond, garnet, stainless steel, steel, iron, copper, zinc, aluminium, ceramics, glass, silica sand, plastics and above-mentioned electronics
Material cut (slice, cutting etc.), grinding (back side grinding, sandblasting etc.), chamfering (oblique angle (beveling), roller etc.),
Grind generated cutting powder, fragment, lapping rejects when (polishing, polishing, polishing etc.) processing；And then to above-mentioned electronic material and
Electronic component generated debris, mineral residue etc. when being processed, install, welding, cleaning, carrying.
As other particles, can enumerate for example attached in the entire manufacturing process of above-mentioned electronic material and electronic component
It in dust, dust etc. on article.
For making the method for the cleansing composition and the article contacts and article-cleaning that are attached to particle of the present invention not have
It is clear can to enumerate such as dipping cleaning, cleaning showers, spray clean, ultrasonic cleaning, liquid injection as cleaning method for limitation
It washes, directly cleaning (DirectPath (registered trademark)) etc..In addition, as well known cleaning device, it is special that such as Japan can be enumerated
Open flat 7-328565 bulletins, special open 2000-189912 bulletins, special open 2001-932 bulletins, special open 2005-144441
Bulletin etc..In addition, the cleansing composition and cleaning agent stoste of the present invention be not due to being therefore dangerous substance is not burnt.Thus,
Due to not needing antiknock device, so can be also suitably used for cleaning showers and spray clean.
Due to can easily make the cleansing composition volatilization of the present invention in drying process, residue will not
On the article of residual after cleaning.Therefore, it is possible to omit the rinsing process to article.However, if necessary can with this hair
Bright identical cleaning agent or various well known detergent are rinsed.As the detergent, pure water and ion exchange water can be enumerated
Equal water；The alcohols such as methanol, ethyl alcohol and isopropanol.
Embodiment
Embodiment and comparative example are enumerated below, further the method for the present invention is described in detail, and certain present invention is simultaneously
It is not limited by them.In addition, in embodiment, part or % are weight basis.In addition, about the institute in cleaning agent stoste below
The structure of the various tertiary amines (A) and di-alcohols solvent (C) that use, boiling point at 1 atmosphere pressure, the azeotropic mixture with water
Ratio of components (weight ratio), as shown in table 2, table 3.
[ratio of components of azeotropic mixture]
In the eggplant type flask of 200ml, it is put into (A) ingredient of 25 parts by weight, the ion exchange water of 100 parts by weight, and profit
It is sufficiently mixed with magnetic stirring apparatus, is prepared for the aqueous solution containing (A) ingredient.Then, it will be equivalent to theoretical cam curve N=
10 distillation column, still head, thermometer and Liebig condenser is connected on the eggplant type flask.Later, at 1 atmosphere pressure,
By being heated to the eggplant type flask with oil bath, and mixed solution is made to boil, is 100 DEG C below to only have collected boiling point
Fraction.
Then, in 6850 Network GC System of gas chromatograph (manufacture of Agilent Technologies companies)
In, according to Absolute Calibration curve method, (A) ingredient described in the fraction is quantified.Moreover, about (C) ingredient, also with
(A) the identical method of ingredient is quantified.
1. the preparation of cleaning agent stoste
Preparation example 1
The ion exchange water of 100 parts by weight, the 2- (diethyls of (A) ingredient as described in of 20 parts by weight are put into beaker
Amino) ethyl alcohol (DEAE), 80 parts by weight (C) ingredient as described in dipropylene glycol monomethyl ether (DPGMME) and stirrer, and
It is sufficiently stirred with magnetic stirring apparatus, is prepared for cleaning agent stoste.
Preparation example 2
The ion exchange water of 100 parts by weight, the DEAE of (A) ingredient, 80 as described in of 20 parts by weight are put into beaker
The Tripropylene glycol monomethyl Ether (TPGMME) and stirrer of (C) ingredient as described in of parts by weight, are used in combination magnetic stirring apparatus to be filled
Divide stirring, is prepared for cleaning agent stoste.
Preparation example 3
The ion exchange water of 100 parts by weight, the N, N, N of (A) ingredient ' as described in of 20 parts by weight are put into beaker,
The TPGMME and stirrer of (C) ingredient as described in of N ' -4-methyl hexamethylene diamines (TMHMDA), 80 parts by weight, are used in combination magnetic force to stir
It mixes device to be sufficiently stirred, is prepared for cleaning agent stoste.
Preparation example 4
Be put into beaker the ion exchange water of 100 parts by weight, the TMHMDA of (A) ingredient as described in of 20 parts by weight,
The diethylene glycol mono-n-butyl ether (DEGMBE) and stirrer of (C) ingredient as described in of 80 parts by weight, be used in combination magnetic stirring apparatus into
Row is sufficiently stirred, and is prepared for cleaning agent stoste.
Preparation example 5
Bis- (2- bis- of the ion exchange water of 100 parts by weight, (A) ingredient as described in of 20 parts by weight are put into beaker
Methylaminoethyl) ether (BDMAEE), 80 parts by weight the DEGMBE and stirrer of (C) ingredient as described in, magnetic agitation is used in combination
Device is sufficiently stirred, and cleaning agent stoste is prepared for.
Preparation example 6
Be put into beaker the ion exchange waters of 100 parts by weight, 100 parts by weight the DEAE of (A) ingredient as described in and
Stirrer is used in combination magnetic stirring apparatus to be sufficiently stirred, and is prepared for cleaning agent stoste.
Preparation example 7
The ion exchange water of 100 parts by weight, the TMHMDA of (A) ingredient as described in of 100 parts by weight are put into beaker
And stirrer, it is used in combination magnetic stirring apparatus to be sufficiently stirred, is prepared for cleaning agent stoste.
Preparation example 8
The ion exchange water of 100 parts by weight, the BDMAEE of (A) ingredient as described in of 100 parts by weight are put into beaker
And stirrer, it is used in combination magnetic stirring apparatus to be sufficiently stirred, is prepared for cleaning agent stoste.
Compare preparation example 1
The ion exchange water of 100 parts by weight, the N- butyl two of (A) ingredient as described in of 20 parts by weight are put into beaker
Ethanol amine (BDEA), 80 parts by weight (C) ingredient as described in tetraethylene glycol monomethyl ether (TEGMME) and stirrer, magnetic is used in combination
Power blender is sufficiently stirred, and cleaning agent stoste is prepared for.
Compare preparation example 2
Be put into beaker the ion exchange waters of 100 parts by weight, 100 parts by weight the BDEA of (A) ingredient as described in and
Stirrer is used in combination magnetic stirring apparatus to be sufficiently stirred, and is prepared for cleaning agent stoste.
Compare preparation example 3
2- (the 2- ammonia of the ion exchange water of 100 parts by weight, (A) ingredient as described in of 100 parts by weight is put into beaker
Base ethylamino) ethyl alcohol (AEAE) and stirrer, it is used in combination magnetic stirring apparatus to be sufficiently stirred, is prepared for cleaning agent stoste.
Compare preparation example 4
The ion exchange water of 100 parts by weight, the polyoxy second of (C) ingredient as described in of 100 parts by weight are put into beaker
Allylic alkylation ether (POEAE) and stirrer, are used in combination magnetic stirring apparatus to be sufficiently stirred, and are prepared for cleaning agent stoste.
Compare preparation example 5
The ion exchange water of 100 parts by weight, the diethylamine of (A) ingredient as described in of 100 parts by weight are put into beaker
(DEA) and stirrer it, is used in combination magnetic stirring apparatus to be sufficiently stirred, is prepared for cleaning agent stoste.
Compare preparation example 6
Ion exchange water is itself served as into cleaning agent stoste.
2. the combustibility of cleaning agent stoste
[flammable evaluation method]
According to Cleveland opening agar diffusion method (JIS K2265-4), the flash-point of each cleaning agent stoste is measured, and
By benchmark evaluation below combustibility.Table 1 indicates result.
[flammable evaluation criteria]
○：No flash-point or flash-point are 100 DEG C or more
×：Flash-point is less than 100 DEG C
[table 1]
| Cleaning agent stoste (unit：Wt%) | It is flammable | |
| Preparation example 1 | DEAE (10)/DPGMME (40)/water (50) | ○ |
| Preparation example 2 | DEAE (10)/TPGMME (40)/water (50) | ○ |
| Preparation example 3 | TMHMDA (10)/TPGMME (40)/water (50) | ○ |
| Preparation example 4 | TMHMDA (10)/DEGMBE (40)/water (50) | ○ |
| Preparation example 5 | BDMAEE (10)/DEGMBE (40)/water (50) | ○ |
| Preparation example 6 | DEAE (50)/water (50) | ○ |
| Preparation example 7 | TMHMDA (50)/water (50) | ○ |
| Preparation example 8 | BDMAEE (50)/water (50) | ○ |
| Compare preparation example 1 | BDEA (10)/TEGMME (40)/water (50) | ○ |
| Compare preparation example 2 | BDEA (50)/water (50) | ○ |
| Compare preparation example 3 | AEAE (50)/water (50) | ○ |
| Compare preparation example 4 | POEAE (50)/water (50) | ○ |
| Compare preparation example 5 | DEA (50)/water (50) | × |
[table 2]
[table 3]
3. the particle removal of cleansing composition
[preparation of contaminated liquid]
In screwed pipe (capacity 20mL) (A), it is put into 9.9g acetone (Wako Pure Chemical Industries, Ltd.'s manufacture, purity
It is 99.5% or more) and 0.1g powdered quartzs filler (trade name " Crystallite VX-S2 ", the gloomy strain formula meeting of dragon
Society's manufacture, average grain diameter are 5 μm), and fully vibrate, it is prepared for the contaminated liquid (A) of 10g a concentration of 1%.Then, at another
In screwed pipe (A '), it is put into 1g contaminated liquids (A) and 9g acetone, and fully vibrate, is prepared for the contaminated liquid of 10g a concentration of 0.1%
(A’)。
Equally, in screwed pipe (B), 9.9g acetone and 0.1g preparing spherical SiO 2s (trade name " Sciqas ", Sakai are put into
The manufacture of chemical industry Co., Ltd., average grain diameter are 1 μm), and fully vibrate, it is prepared for the contaminated liquid (B) of 10g a concentration of 1%.
Then, in another screwed pipe (B '), it is put into 1g contaminated liquids (B) and 9g acetone, and fully vibrate, it is a concentration of is prepared for 10g
0.1% contaminated liquid (B ').
Equally, in screwed pipe (C), 9.9g acetone and 0.1g aluminium oxide particles (trade name " precise finiss α-are put into
Aluminium oxide ", Wako Pure Chemical Industries, Ltd.'s manufacture, average grain diameter are 0.5 μm), and fully vibrate, it is a concentration of to be prepared for 10g
1% contaminated liquid (C).Then, in another screwed pipe (C '), it is put into 1g contaminated liquids (C) and 9g acetone, and fully vibrate,
It is prepared for the contaminated liquid (C ') of 10g a concentration of 0.1%.
[making of experiment chip]
Next, being instilled to the center of high purity silicon chip (manufacture of AS ONE Co., Ltd., diameter phi are 4 inches)
0.02g contaminated liquids (A), and make its natural drying, system is tested with chip (A).In addition, in an identical manner, to high-purity
Silicon wafer instills contaminated liquid (B), (C) and (A ')~(C '), and makes its natural drying, make respectively be tested with chip (B),
(C) and (A ')~(C ').
[evaluation method of particle removal]
Embodiment 1
As shown in Figure 1, in beaker (1) (capacity 1000mL, bottle diameter φ are 110mm, are highly 150mm), put
Cleaning agent stoste (2), 960.0g ion exchange waters (3) and the stirrer (4) for entering 40.0g preparation examples 1, are used in combination magnetic stirring apparatus
(5) it is sufficiently stirred, the mixing ratio [(A+C)/(A+B+C)] for being prepared for above-mentioned (A) ingredient, (B) ingredient and (C) ingredient is 1/
50 cleansing composition.Then, the rotary speed of magnetic stirring apparatus is adjusted to 800rpm, and by above-mentioned experiment chip
(A) (6) are put into solution, while being fixed with stainless steel clip (7) and stainless steel bar (8), are carried out at room temperature
Cleaning in 10 minutes.Later, experiment is taken out with chip (A) from solution, and is set as 80 DEG C circulating dry in temperature
It has been dried in dry machine 10 minutes.In addition, with identical step, above-mentioned experiment is carried out with chip (B), (C) and (A ')~(C ')
Cleaning and dry.
Next, using light microscope (1000 times), the experiment that random observation has finished on after cleaning and drying is used
Five pollution parts of chip (A), and found out remaining total number of particles.On the other hand, by method same as described above, also
It has found out in advance and has been attached to the total number of particles of wafer surface after just being polluted by above-mentioned contaminated liquid (A), and be calculate by the following formula
Particle removal rate.Each embodiment carries out five evaluations, finds out the average value of particle removal rate, and according to evaluation base below
Standard evaluates particle removal.The results are shown in Table 4 for it (following all same).
Particle removal rate (%)=and (total number of particles after just polluting-remaining total number of particles after cleaning)/just pollute
Total number of particles × 100 afterwards
[evaluation criteria of particle removal]
◎：Particle removal rate is more than or equal to 90%
○：Particle removal rate is more than or equal to 70% and is less than 90%
△：Particle removal rate is more than or equal to 50% and is less than 70%
×：Particle removal rate is less than 50%
In addition, with identical step, to have finished on cleaning and it is dry after experiment with chip (B), (C) and (A ')~
(C ') has carried out the evaluation of particle removal.
Embodiment 2
As shown in Figure 1, in beaker (1) (capacity 1000mL, bottle diameter φ are 110mm, are highly 150mm), put
Cleaning agent stoste (2), 980.0g ion exchange waters (3) and the stirrer (4) for entering 20.0g preparation examples 1, are used in combination magnetic stirring apparatus
(5) it is sufficiently stirred, the mixing ratio [(A+C)/(A+B+C)] for being prepared for above-mentioned (A) ingredient, (B) ingredient and (C) ingredient is 1/
100 cleansing composition.Then, the rotary speed of magnetic stirring apparatus is adjusted to 800rpm, and by above-mentioned experiment chip
(A) (6) are put into solution, while being fixed with stainless steel clip (7) and stainless steel bar (8), are carried out at room temperature
Cleaning in 10 minutes.Later, experiment is taken out with chip (A) from solution, and is set as 80 DEG C circulating dry in temperature
It has been dried in dry machine 10 minutes.In addition, with identical step, above-mentioned experiment is carried out with chip (B), (C) and (A ')~(C ')
Cleaning and dry.
According to evaluation criteria same as Example 1, to have finished on cleaning and it is dry after experiment with chip (A)~
(C) and (A ')~(C ') has carried out the evaluation of particle removal.
Embodiment 3
As shown in Figure 1, in beaker (1) (capacity 1000mL, bottle diameter φ are 110mm, are highly 150mm), put
Cleaning agent stoste (2), 999.0g ion exchange waters (3) and the stirrer (4) for entering 1.0g preparation examples 1, are used in combination magnetic stirring apparatus (5)
It is sufficiently stirred, the mixing ratio [(A+C)/(A+B+C)] for being prepared for above-mentioned (A) ingredient, (B) ingredient and (C) ingredient is 1/
2000 cleansing composition.Then, the rotary speed of magnetic stirring apparatus is adjusted to 800rpm, and by above-mentioned experiment chip
(A) (6) are put into solution, while being fixed with stainless steel clip (7) and stainless steel bar (8), are carried out at room temperature
Cleaning in 10 minutes.Later, experiment is taken out with chip (A) from solution, and is set as 80 DEG C circulating dry in temperature
It has been dried in dry machine 10 minutes.In addition, with identical step, above-mentioned experiment is carried out with chip (B), (C) and (A ')~(C ')
Cleaning and dry.
According to evaluation criteria same as Example 1, to have finished on cleaning and it is dry after experiment with chip (A)~
(C) and (A ')~(C ') has carried out the evaluation of particle removal.
Embodiment 4
As shown in Figure 1, in beaker (1) (capacity 1000mL, bottle diameter φ are 110mm, are highly 150mm), put
Cleaning agent stoste (2), 999.8g ion exchange waters (3) and the stirrer (4) for entering 0.2g preparation examples 1, are used in combination magnetic stirring apparatus (5)
It is sufficiently stirred, the mixing ratio [(A+C)/(A+B+C)] for being prepared for above-mentioned (A) ingredient, (B) ingredient and (C) ingredient is 1/
10000 cleansing composition.Then, the rotary speed of magnetic stirring apparatus is adjusted to 800rpm, and above-mentioned experiment is brilliant
Piece (A) (6) is put into solution, while being fixed with stainless steel clip (7) and stainless steel bar (8), at room temperature into
Cleaning in 10 minutes is gone.Later, experiment is taken out with chip (A) from solution, and is set as 80 DEG C circulating in temperature
It has been dried in drying machine 10 minutes.In addition, with identical step, to above-mentioned experiment with chip (B), (C) and (A ')~(C ') into
It has gone and has cleaned and dry.
According to evaluation criteria same as Example 1, to have finished on cleaning and it is dry after experiment with chip (A)~
(C) and (A ')~(C ') has carried out the evaluation of particle removal.
Embodiment 5~18, comparative example 1~8
As shown in table 4, in the same manner as in Example 1, each cleaning agent stoste is diluted so that mixing ratio [(A
+ C)/(A+B+C)] it is 1/2000 or 1/10000, and have rated the particle removal of each cleansing composition.
Comparative example 9
Since the flash-point for the cleaning agent stoste for comparing preparation example 5 is less than 100 DEG C, do not evaluate.
Comparative example 10
As shown in Figure 1, in beaker (1) (capacity 1000mL, bottle diameter φ are 110mm, are highly 150mm), put
Enter 1000g ion exchange waters (3) and stirrer (4), and the rotary speed of magnetic stirring apparatus is adjusted to 800rpm.Next,
Above-mentioned experiment is put into chip (A) (6) in solution, it is same being fixed with stainless steel clip (7) and stainless steel bar (8)
When, cleaning in 10 minutes has been carried out at room temperature.Later, experiment is taken out with chip (A) from solution, and be set as in temperature
It has been dried in 80 DEG C of circulating drying machine 10 minutes.In addition, with identical step, to above-mentioned experiment chip (A ')~(C ')
It is cleaned and has been dried.
According to evaluation criteria same as Example 1, to have finished on cleaning and it is dry after experiment with chip (A)~
(C) and (A ')~(C ') has carried out the evaluation of particle removal.
4. the drying property of cleansing composition
[evaluation method of drying property]
Embodiment 1
Cleaning agent stoste, the 96.0g ion exchange waters of 4.0g preparation examples 1 are put into screwed pipe (capacity 100mL), and
Fully oscillation, be prepared for the mixing ratio [(A+C)/(A+B+C)] of above-mentioned (A) ingredient, (B) ingredient and (C) ingredient for 1/50 it is clear
Detergent composition.Next, being instilled to the center of high purity silicon chip (manufacture of AS ONE Co., Ltd., diameter phi are 4 inches)
The 0.05g cleansing compositions, and 20 minutes have been stood in the circulating drying machine that temperature is adjusted to 80 DEG C.Moreover, using meat
Wafer surface after eye sees drying has rated the drying property of cleansing composition according to evaluation criteria below.
[evaluation criteria of drying property]
○：Residue without cleansing composition
×：There is the residue of cleansing composition
Embodiment 2
Cleaning agent stoste, the 98.0g ion exchange waters of 2.0g preparation examples 1 are put into screwed pipe (capacity 100mL), and
Fully oscillation, be prepared for the mixing ratio [(A+C)/(A+B+C)] of above-mentioned (A) ingredient, (B) ingredient and (C) ingredient for 1/100 it is clear
Detergent composition.Below by way of step same as Example 1, the drying property of cleansing composition is evaluated.
Embodiment 3
Cleaning agent stoste, the 99.9g ion exchange waters of 0.1g preparation examples 1 are put into screwed pipe (capacity 100mL), and
Fully oscillation, the mixing ratio [(A+C)/(A+B+C)] for being prepared for above-mentioned (A) ingredient, (B) ingredient and (C) ingredient are 1/2000
Cleansing composition.Below by way of step same as Example 1, the drying property of cleansing composition is evaluated.
Embodiment 4
Cleaning agent stoste, the 99.98g ion exchange waters of 0.02g preparation examples 1 are put into screwed pipe (capacity 100mL),
And fully vibrate, the mixing ratio [(A+C)/(A+B+C)] for being prepared for above-mentioned (A) ingredient, (B) ingredient and (C) ingredient is 1/10000
Cleansing composition.Below by way of step same as Example 1, the drying property of cleansing composition is evaluated.
Embodiment 5~18, comparative example 1~8
As shown in table 4, in the same manner as in Example 1, each cleaning agent stoste is diluted so that mixing ratio [(A
+ C)/(A+B+C)] it is 1/2000 or 1/10000, and have rated the drying property of each cleansing composition.
Comparative example 10
Using ion exchange water, and by step same as Example 1, to evaluate drying property.
[table 4]
The explanation of reference numeral
1 beaker
2 cleaning agent stostes
3 ion exchange waters
4 stirrers
5 magnetic stirring apparatus
6 experiment chips
7 stainless steel clips
8 stainless steel bars
Claims (9)
1. a kind of cleaning agent for electronic materials composition, which is characterized in that
The cleansing composition contains the tertiary amine A and water B of azeotrope with water,
The boiling point of the tertiary amine A is 130~250 DEG C at 1 atmosphere pressure,
Weight ratio in the total of the tertiary amine A and the water B of the tertiary amine A in the cleansing composition is less than or equal to uncle
Weight ratios of the amine A in the azeotropic mixture being made of tertiary amine A and water B, the weight ratio are indicated with %.
2. cleaning agent for electronic materials composition according to claim 1, which is characterized in that
The cleansing composition also di-alcohols solvent C indicated by general formula (1) containing azeotrope with water,
General formula (1)：R1-O-[CH2-CH(X)-O]n- H, in general formula (1), R1Indicate that carbon atom number is 1~4 alkyl, n indicates 1
~3, X indicate hydrogen or methyl,
The boiling point of the di-alcohols solvent C is 120~275 DEG C at 1 atmosphere pressure,
Weight of the di-alcohols solvent C in the di-alcohols solvent C of the cleansing composition and the total of the water B
It is described than, the weight ratio less than or equal to di-alcohols solvent C in the azeotropic mixture being made of di-alcohols solvent C and water B
Weight ratio is indicated with %.
3. cleaning agent for electronic materials composition according to claim 1 or 2, which is characterized in that
The tertiary amine A be the monoamine A1 indicated by general formula (2) and the polyamine A2 that is indicated by general formula (3) in any one more than,
General formula (2)：(R2)R3N-CH2- CH (Y)-OH, in general formula (2), R2And R3Identical or different carbon atom number is indicated respectively
For 1~3 alkyl, Y indicates hydrogen or methyl；
General formula (3)：(R4)R5N-C2H4-Z-C2H4-NR6(R7), in general formula (3), R4、R5、R6And R7Indicate identical or not respectively
The alkyl that same carbon atom number is 1~3, Z expressions-CH2-、-(CH2)2,-O- ,-NH- or-N (CH3)-。
4. cleaning agent for electronic materials composition according to any one of claim 1 to 3, which is characterized in that
Weight ratio, that is, A/s (A+B) of the tertiary amine A in the total of the tertiary amine A and the water B is 1/100000 or more.
5. cleaning agent for electronic materials composition according to any one of claim 2 to 4, which is characterized in that
The total of the tertiary amine A and the di-alcohols solvent C, in the tertiary amine A and water B and the di-alcohols solvent
Weight ratio in the total of C is that (A+C)/(A+B+C) is 1/100000 or more.
6. a kind of cleaning agent stoste contains the cleaning agent for electronic materials group being used to prepare described in any one of claim 1 to 5
Close the tertiary amine A and the water B of object.
7. a kind of cleaning method of electronic material, which is characterized in that
The method includes the cleaning process of electronic material, and the cleaning process of the electronic material has used in claim 1 to 5
Any one of them cleaning agent for electronic materials composition.
8. the cleaning method of electronic material according to claim 7, which is characterized in that
The method does not include rinsing process.
9. the cleaning method of electronic material according to claim 7 or 8, which is characterized in that
The method includes the particle removing step of electronic material.
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| JP2015-254252 | 2015-12-25 | ||
| JP2015254252 | 2015-12-25 | ||
| PCT/JP2016/088131 WO2017110885A1 (en) | 2015-12-25 | 2016-12-21 | Cleaning agent composition for electronic material, cleaning agent stock solution, and method for cleaning electronic material |
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| JP6593441B2 (en) | 2019-10-30 |
| KR20180098527A (en) | 2018-09-04 |
| CN108779419B (en) | 2021-04-20 |
| JPWO2017110885A1 (en) | 2017-12-28 |
| WO2017110885A1 (en) | 2017-06-29 |
| KR102635269B1 (en) | 2024-02-13 |
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