JPWO2017110885A1 - Cleaning composition for electronic material, cleaning agent stock solution, and cleaning method for electronic material - Google Patents
Cleaning composition for electronic material, cleaning agent stock solution, and cleaning method for electronic material Download PDFInfo
- Publication number
- JPWO2017110885A1 JPWO2017110885A1 JP2017537334A JP2017537334A JPWO2017110885A1 JP WO2017110885 A1 JPWO2017110885 A1 JP WO2017110885A1 JP 2017537334 A JP2017537334 A JP 2017537334A JP 2017537334 A JP2017537334 A JP 2017537334A JP WO2017110885 A1 JPWO2017110885 A1 JP WO2017110885A1
- Authority
- JP
- Japan
- Prior art keywords
- cleaning
- water
- tertiary amine
- cleaning composition
- electronic material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000000203 mixture Substances 0.000 title claims abstract description 120
- 238000004140 cleaning Methods 0.000 title claims abstract description 114
- 239000012776 electronic material Substances 0.000 title claims abstract description 47
- 238000000034 method Methods 0.000 title claims abstract description 40
- 239000011550 stock solution Substances 0.000 title claims abstract description 40
- 239000012459 cleaning agent Substances 0.000 title abstract description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 88
- 150000003512 tertiary amines Chemical class 0.000 claims abstract description 55
- 239000002245 particle Substances 0.000 claims abstract description 52
- 238000009835 boiling Methods 0.000 claims abstract description 17
- 230000001747 exhibiting effect Effects 0.000 claims abstract description 6
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 54
- 239000003599 detergent Substances 0.000 claims description 38
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 27
- 239000002904 solvent Substances 0.000 claims description 27
- 125000004432 carbon atom Chemical group C* 0.000 claims description 13
- 125000000217 alkyl group Chemical group 0.000 claims description 12
- 239000001257 hydrogen Substances 0.000 claims description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims description 7
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 7
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 229920000768 polyamine Polymers 0.000 claims description 3
- 238000005406 washing Methods 0.000 abstract description 13
- 235000012431 wafers Nutrition 0.000 description 32
- 238000002360 preparation method Methods 0.000 description 25
- 238000001035 drying Methods 0.000 description 17
- 238000005498 polishing Methods 0.000 description 16
- 230000000052 comparative effect Effects 0.000 description 15
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- 238000011156 evaluation Methods 0.000 description 13
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- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 12
- 229910001220 stainless steel Inorganic materials 0.000 description 11
- 239000010935 stainless steel Substances 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 238000002156 mixing Methods 0.000 description 8
- 239000000126 substance Substances 0.000 description 7
- BFSVOASYOCHEOV-UHFFFAOYSA-N 2-diethylaminoethanol Chemical compound CCN(CC)CCO BFSVOASYOCHEOV-UHFFFAOYSA-N 0.000 description 6
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 5
- GTEXIOINCJRBIO-UHFFFAOYSA-N 2-[2-(dimethylamino)ethoxy]-n,n-dimethylethanamine Chemical compound CN(C)CCOCCN(C)C GTEXIOINCJRBIO-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
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- GVNHOISKXMSMPX-UHFFFAOYSA-N 2-[butyl(2-hydroxyethyl)amino]ethanol Chemical compound CCCCN(CCO)CCO GVNHOISKXMSMPX-UHFFFAOYSA-N 0.000 description 3
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- BHUXAQIVYLDUQV-UHFFFAOYSA-N 1-(diethylamino)propan-2-ol Chemical compound CCN(CC)CC(C)O BHUXAQIVYLDUQV-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
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- 239000012298 atmosphere Substances 0.000 description 2
- 238000005422 blasting Methods 0.000 description 2
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- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 2
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- 239000010949 copper Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 235000019441 ethanol Nutrition 0.000 description 2
- TUEYHEWXYWCDHA-UHFFFAOYSA-N ethyl 5-methylthiadiazole-4-carboxylate Chemical compound CCOC(=O)C=1N=NSC=1C TUEYHEWXYWCDHA-UHFFFAOYSA-N 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- TXXWBTOATXBWDR-UHFFFAOYSA-N n,n,n',n'-tetramethylhexane-1,6-diamine Chemical compound CN(C)CCCCCCN(C)C TXXWBTOATXBWDR-UHFFFAOYSA-N 0.000 description 2
- ZYWUVGFIXPNBDL-UHFFFAOYSA-N n,n-diisopropylaminoethanol Chemical compound CC(C)N(C(C)C)CCO ZYWUVGFIXPNBDL-UHFFFAOYSA-N 0.000 description 2
- -1 nitrogen-containing heterocyclic compounds Chemical class 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- UKODFQOELJFMII-UHFFFAOYSA-N pentamethyldiethylenetriamine Chemical compound CN(C)CCN(C)CCN(C)C UKODFQOELJFMII-UHFFFAOYSA-N 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
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- 239000002002 slurry Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- QWOZZTWBWQMEPD-UHFFFAOYSA-N 1-(2-ethoxypropoxy)propan-2-ol Chemical compound CCOC(C)COCC(C)O QWOZZTWBWQMEPD-UHFFFAOYSA-N 0.000 description 1
- MWGRRMQNSQNFID-UHFFFAOYSA-N 1-(2-methylpropoxy)propan-2-ol Chemical compound CC(C)COCC(C)O MWGRRMQNSQNFID-UHFFFAOYSA-N 0.000 description 1
- LAOZQNBBEXGXBN-UHFFFAOYSA-N 1-(dipropylamino)propan-2-ol Chemical compound CCCN(CCC)CC(C)O LAOZQNBBEXGXBN-UHFFFAOYSA-N 0.000 description 1
- LORVPHHKJFSORQ-UHFFFAOYSA-N 1-[1-(1-butoxypropan-2-yloxy)propan-2-yloxy]propan-2-ol Chemical compound CCCCOCC(C)OCC(C)OCC(C)O LORVPHHKJFSORQ-UHFFFAOYSA-N 0.000 description 1
- IPWSGYSCKAXGQD-UHFFFAOYSA-N 1-[di(propan-2-yl)amino]propan-2-ol Chemical compound CC(O)CN(C(C)C)C(C)C IPWSGYSCKAXGQD-UHFFFAOYSA-N 0.000 description 1
- JOLQKTGDSGKSKJ-UHFFFAOYSA-N 1-ethoxypropan-2-ol Chemical compound CCOCC(C)O JOLQKTGDSGKSKJ-UHFFFAOYSA-N 0.000 description 1
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- GQCZPFJGIXHZMB-UHFFFAOYSA-N 1-tert-Butoxy-2-propanol Chemical compound CC(O)COC(C)(C)C GQCZPFJGIXHZMB-UHFFFAOYSA-N 0.000 description 1
- KKQVUWHSUOGDEI-UHFFFAOYSA-N 2-(2-butan-2-yloxyethoxy)ethanol Chemical compound CCC(C)OCCOCCO KKQVUWHSUOGDEI-UHFFFAOYSA-N 0.000 description 1
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- 238000007654 immersion Methods 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- KHDDHEBEVNRFAT-UHFFFAOYSA-N n,n,n',n'-tetra(propan-2-yl)hexane-1,6-diamine Chemical compound CC(C)N(C(C)C)CCCCCCN(C(C)C)C(C)C KHDDHEBEVNRFAT-UHFFFAOYSA-N 0.000 description 1
- SRTOAFZPEOCBGW-UHFFFAOYSA-N n,n,n',n'-tetraethylhexane-1,6-diamine Chemical compound CCN(CC)CCCCCCN(CC)CC SRTOAFZPEOCBGW-UHFFFAOYSA-N 0.000 description 1
- OQIRZNNBUNOXTQ-UHFFFAOYSA-N n,n,n',n'-tetraethylpentane-1,5-diamine Chemical compound CCN(CC)CCCCCN(CC)CC OQIRZNNBUNOXTQ-UHFFFAOYSA-N 0.000 description 1
- DNOJGXHXKATOKI-UHFFFAOYSA-N n,n,n',n'-tetramethylpentane-1,5-diamine Chemical compound CN(C)CCCCCN(C)C DNOJGXHXKATOKI-UHFFFAOYSA-N 0.000 description 1
- OAFOHGONKIXDDE-UHFFFAOYSA-N n,n,n',n'-tetrapropylhexane-1,6-diamine Chemical compound CCCN(CCC)CCCCCCN(CCC)CCC OAFOHGONKIXDDE-UHFFFAOYSA-N 0.000 description 1
- PHDLNXKJCPLCRO-UHFFFAOYSA-N n-[2-(diethylamino)ethyl]-n',n'-diethyl-n-methylethane-1,2-diamine Chemical compound CCN(CC)CCN(C)CCN(CC)CC PHDLNXKJCPLCRO-UHFFFAOYSA-N 0.000 description 1
- UICCSKORMGVRCB-UHFFFAOYSA-N n-[2-(diethylamino)ethyl]-n',n'-diethylethane-1,2-diamine Chemical compound CCN(CC)CCNCCN(CC)CC UICCSKORMGVRCB-UHFFFAOYSA-N 0.000 description 1
- JPJMSWSYYHNPLD-UHFFFAOYSA-N n-[2-(dimethylamino)ethyl]-n',n'-dimethylethane-1,2-diamine Chemical compound CN(C)CCNCCN(C)C JPJMSWSYYHNPLD-UHFFFAOYSA-N 0.000 description 1
- FIDAJBOTMYEWMR-UHFFFAOYSA-N n-[2-(dipropylamino)ethyl]-n',n'-dipropylethane-1,2-diamine Chemical compound CCCN(CCC)CCNCCN(CCC)CCC FIDAJBOTMYEWMR-UHFFFAOYSA-N 0.000 description 1
- SALTZQPERQCAHK-UHFFFAOYSA-N n-[2-[2-[di(propan-2-yl)amino]ethoxy]ethyl]-n-propan-2-ylpropan-2-amine Chemical compound CC(C)N(C(C)C)CCOCCN(C(C)C)C(C)C SALTZQPERQCAHK-UHFFFAOYSA-N 0.000 description 1
- DVVORTHDQVBZOO-UHFFFAOYSA-N n-[2-[di(propan-2-yl)amino]ethyl]-n',n'-di(propan-2-yl)ethane-1,2-diamine Chemical compound CC(C)N(C(C)C)CCNCCN(C(C)C)C(C)C DVVORTHDQVBZOO-UHFFFAOYSA-N 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000008213 purified water Substances 0.000 description 1
- 125000001453 quaternary ammonium group Chemical group 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000008399 tap water Substances 0.000 description 1
- 235000020679 tap water Nutrition 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 150000003585 thioureas Chemical class 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 150000003672 ureas Chemical class 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Emergency Medicine (AREA)
- Detergent Compositions (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
本発明の電子材料用の洗浄剤組成物は、水と共沸性を示す3級アミン(A)及び水(B)を含む洗浄剤組成物であって、前記3級アミン(A)の沸点が、1気圧下で130〜250℃であり、前記洗浄剤組成物における前記3級アミン(A)と前記水(B)の合計中の3級アミン(A)の重量割合(%)が、3級アミン(A)及び水(B)からなる共沸混合物中の3級アミン(A)の重量割合以下である。当該洗浄剤組成物は、非常に少量(低濃度)の使用でも、電子材料に付着するパーティクルを除去することができ、なおかつ洗浄剤成分を洗い落とすためのすすぎ工程がなくても、洗浄剤の残渣が残らない電子材料用の洗浄剤組成物、その原液及び電子材料の洗浄工程を含む洗浄方法を提供することができる。The cleaning composition for electronic materials of the present invention is a cleaning composition containing a tertiary amine (A) and water (B) exhibiting azeotropic properties with water, and has a boiling point of the tertiary amine (A). However, the weight ratio (%) of the tertiary amine (A) in the total of the tertiary amine (A) and the water (B) in the cleaning composition is 130 to 250 ° C under 1 atm. It is below the weight ratio of the tertiary amine (A) in the azeotropic mixture consisting of the tertiary amine (A) and water (B). The cleaning composition can remove particles adhering to the electronic material even in the use of a very small amount (low concentration), and even if there is no rinsing step for washing out the cleaning component, the residue of the cleaning agent It is possible to provide a cleaning method for an electronic material that does not remain, a stock solution thereof, and a cleaning method including a cleaning process for the electronic material.
Description
本発明は、電子材料用の洗浄剤組成物、洗浄剤原液、及び電子材料の洗浄方法に関する。 The present invention relates to a cleaning composition for electronic materials, a cleaning agent stock solution, and a cleaning method for electronic materials.
近年、エレクトロニクス業界では、情報化、省エネルギー化、低炭素化社会への変遷に伴い、電子部品の小型化、高性能化が急速に進展している。そして、その背景には、研磨、平坦化の技術が大きく関与している。 In recent years, in the electronics industry, miniaturization and high performance of electronic components are rapidly progressing with the transition to information society, energy saving, and low carbon society. And in the background, polishing and flattening techniques are greatly involved.
例えば、半導体関連の分野では、CMOSやTTL等のデジタルIC製造時のリソグラフィ工程において、微細な回路パターンを正確かつ高効率で転写する目的で、シリコンウエハ上に形成された酸化ケイ素(SiO2)、窒化ケイ素(Si3N4)、リン化ケイ酸ガラス(PSG)等の絶縁薄膜の研磨、平坦化が行なわれている。また、ハードディスク(Hard disk Drive、HDD)等の磁気ディスクを扱う分野では、ディスク表面と磁気ヘッドの間隔をナノオーダーで制御し、記録密度と信頼性を両立させるために、ディスク表面の研磨、平坦化が行なわれている。更に、半導体照明(LED)等の光デバイスや、大電力用ダイオード、トランジスタ等のパワーデバイスを扱う分野では、研磨工程により、サファイア(Al2O3)、炭化ケイ素(SiC)、窒化ガリウム(GaN)などの基板表面の凹凸、変質、汚染箇所を除去し、製品の性能や歩留まりを向上させている。For example, in the field of semiconductors, silicon oxide (SiO 2 ) formed on a silicon wafer for the purpose of transferring a fine circuit pattern accurately and with high efficiency in a lithography process when manufacturing a digital IC such as CMOS or TTL. Insulating thin films such as silicon nitride (Si 3 N 4 ) and phosphide silicate glass (PSG) are polished and planarized. In the field of handling hard disks (Hard Disk Drives, HDDs) and other magnetic disks, the distance between the disk surface and the magnetic head is controlled in the nano order, and the disk surface is polished and flattened to achieve both recording density and reliability. Has been made. Further, in the field of handling optical devices such as semiconductor lighting (LED) and power devices such as high power diodes and transistors, polishing processes include sapphire (Al 2 O 3 ), silicon carbide (SiC), gallium nitride (GaN). ) And other irregularities, alterations, and contaminated parts on the substrate surface are removed to improve product performance and yield.
上記研磨方法としては、シリカ(SiO2)、アルミナ(Al2O3)又はセリア(CeO2)等の微粒子を水系溶媒等に分散させた研磨剤(スラリー)を使用した化学機械研磨(Chemical Mechanical Polishing、CMP)及びダイヤモンド等の硬質粒子を散りばめた、ブラシ、パッド、ホイール等により機械的に研磨する方法等がある。As the polishing method, chemical mechanical polishing (chemical mechanical) using an abrasive (slurry) in which fine particles such as silica (SiO 2 ), alumina (Al 2 O 3 ), or ceria (CeO 2 ) are dispersed in an aqueous solvent or the like is used. Polishing, CMP) and mechanical polishing with a brush, pad, wheel or the like in which hard particles such as diamond are dispersed.
しかしながら、いずれの方法においても、研磨後の電子材料には大量の砥粒や研磨屑など(以下、パーティクルと記載する。)が付着し、性能や歩留まりの低下を招く。従って、それらを除去する洗浄工程が必要不可欠であり、パーティクルを機能的かつ効率的に除去する洗浄剤組成物の開発が急務となっている。このような洗浄剤組成物として、例えば、下記の洗浄剤組成物が開示されている。 However, in any of the methods, a large amount of abrasive grains and polishing debris (hereinafter referred to as particles) adhere to the electronic material after polishing, leading to a decrease in performance and yield. Therefore, a cleaning process for removing them is indispensable, and there is an urgent need to develop a cleaning composition that functionally and efficiently removes particles. As such a cleaning composition, for example, the following cleaning composition is disclosed.
特許文献1に記載の洗浄剤組成物は、フッ素系陰イオン性界面活性剤と第4級アンモニウム水酸化物を含有しており、任意成分としてアルカノールアミンを含む。同文献によると、この洗浄剤組成物は半導体ウエハ表面のパーティクルの除去に適していることが示されている。しかし、この洗浄剤組成物には不揮発性の界面活性剤等が含まれており、洗浄工程の後、それらを洗い落とすためのすすぎ工程が必須であると考えられる。
The cleaning composition described in
特許文献2に記載の洗浄剤組成物は、アルキルアミン類、芳香族ジアミン類、尿素類、チオ尿素類、アゾ化合物、含窒素複素環化合物及び特定のアミノ酸類を含有している。同文献によると、この洗浄剤組成物は銅配線が施された半導体表面の酸化銅、及びパーティクルの除去に好適であることが示されている。しかし、この洗浄剤組成物には不揮発性の酸(例えば、グリシン)等が含まれており、洗浄工程の後、それらを洗い落とすためのすすぎ工程が必須であると考えられる。
The cleaning composition described in
特許文献3に記載の洗浄剤組成物は、グリシン、アクリル酸系重合体、特定の非イオン性化合物及び水を含む。同文献によると、この洗浄剤組成物は化学機械研磨(CMP)用のスラリーに由来するパーティクルの除去に適していることが示されている。しかし、この洗浄剤組成物には不揮発性の酸(例えば、グリシン)や重合体等が含まれており、洗浄工程の後、それらを洗い落とすためのすすぎ工程が必須であると考えられる。
The cleaning composition described in
本発明は、非常に少量(低濃度)の使用でも、洗浄対象物に付着するパーティクルを除去することができ、なおかつ洗浄剤成分を洗い落とすためのすすぎ工程がなくても、洗浄剤の残渣が残らない電子材料用の洗浄剤組成物、その原液、及び電子材料の洗浄方法を提供することである。 The present invention can remove particles adhering to an object to be cleaned even when used in a very small amount (low concentration), and even if there is no rinsing step for washing away the cleaning agent component, a residue of the cleaning agent remains. It is to provide a cleaning composition for electronic materials, a stock solution thereof, and a cleaning method for electronic materials.
本発明者らは、上記課題を解決すべく鋭意検討したところ、水と共沸性を示す3級アミン(A)及び水(B)を特定比率で用いることにより、上記課題を解決することができることを見出し、本発明を完成させた。すなわち、本発明は下記項1〜9である。 The inventors of the present invention have intensively studied to solve the above problems, and can solve the above problems by using tertiary amines (A) and water (B) that exhibit azeotropic properties with water at a specific ratio. The present invention has been completed by finding out what can be done. That is, this invention is the following items 1-9.
項1.水と共沸性を示す3級アミン(A)及び水(B)を含む洗浄剤組成物であって、前記3級アミン(A)の沸点が、1気圧下で130〜250℃であり、前記洗浄剤組成物における前記3級アミン(A)と前記水(B)の合計中の3級アミン(A)の重量割合(%)が、3級アミン(A)及び水(B)からなる共沸混合物中の3級アミン(A)の重量割合以下であることを特徴とする電子材料用の洗浄剤組成物。
項2.さらに、水と共沸性を示す一般式(1):R1−O−[CH2−CH(X)−O]n−H(式(1)中、R1は炭素数1〜4のアルキル基を示し、nは1〜3を示し、Xは水素又はメチル基を示す。)で表されるグリコール系溶剤(C)を含み、前記グリコール系溶剤(C)の沸点が、1気圧下で120〜275℃であり、前記洗浄剤組成物における前記グリコール系溶剤(C)と前記水(B)の合計中のグリコール系溶剤(C)の重量割合(%)が、グリコール系溶剤(C)及び水(B)からなる共沸混合物中のグリコール系溶剤(C)の重量割合以下であることを特徴とする前項1記載の電子材料用の洗浄剤組成物。
項3.前記3級アミン(A)が、一般式(2):(R2)R3N−CH2−CH(Y)−OH(式(2)中、R2及びR3はそれぞれ同一または異なる炭素数1〜3のアルキル基を示し、Yは水素又はメチル基を示す。)で表されるモノアミン(A1)、及び一般式(3):(R4)R5N−C2H4−Z−C2H4−NR6(R7)(式(3)中、R4、R5、R6及びR7はそれぞれ同一または異なる炭素数1〜3のアルキル基を示し、Zは−CH2−、−(CH2)2−、−O−、−NH−、または−N(CH3)−を示す。)で表されるポリアミン(A2)のいずれか1つ以上であることを特徴とする前項1又は2記載の電子材料用の洗浄剤組成物。
項4.前記3級アミン(A)と前記水(B)の合計中の前記3級アミン(A)の重量割合(A/(A+B))が、1/100000以上である前項1〜3のいずれかに記載の電子材料用の洗浄剤組成物。
項5.前記3級アミン(A)と前記水(B)と前記グリコール系溶剤(C)の合計中の前記3級アミン(A)と前記グリコール系溶剤(C)の合計の重量割合((A+C)/(A+B+C))が、1/100000以上である前項2〜4のいずれかに記載の電子材料用の洗浄剤組成物。
項6.前項1〜5のいずれかに記載の電子材料用の洗浄剤組成物を調製するための前記3級アミン(A)および前記水(B)を含む洗浄剤原液。
項7.前項1〜5のいずれかに記載の電子材料用の洗浄剤組成物を用いた電子材料の洗浄工程を含むことを特徴とする電子材料の洗浄方法。 Item 7. 6. A method for cleaning an electronic material, comprising a step of cleaning the electronic material using the electronic material cleaning composition according to any one of 1 to 5 above.
項8.すすぎ工程を含まないことを特徴とする、前項7記載の電子材料の洗浄方法。 Item 8. 8. The method for cleaning an electronic material according to item 7, wherein the rinsing step is not included.
項9.電子材料のパーティクルの除去工程を含むことを特徴とする前項7又は8の電子材料の洗浄方法。 Item 9. 9. The method for cleaning an electronic material as described in 7 or 8 above, further comprising a step of removing particles of the electronic material.
本発明によれば、非常に少量(低濃度)の使用でも、電子材料に付着するパーティクルを除去することができ、なおかつ洗浄剤成分を洗い落とすためのすすぎ工程がなくても、洗浄剤の残渣が残らない電子材料用の洗浄剤組成物、その原液及び電子材料の洗浄方法を提供することができる。 According to the present invention, even when a very small amount (low concentration) is used, particles adhering to the electronic material can be removed, and even if there is no rinsing step for washing away the detergent component, the residue of the detergent is removed. It is possible to provide a cleaning composition for an electronic material that does not remain, a stock solution thereof, and a cleaning method for the electronic material.
本発明の洗浄剤組成物は、水と共沸性を示す3級アミン(A)及び水(B)を含み、前記洗浄剤組成物における前記3級アミン(A)と前記水(B)の合計中の3級アミン(A)の重量割合(%)が、3級アミン(A)及び水(B)からなる共沸混合物中の3級アミン(A)の重量割合以下であるため、例えば、50℃〜150℃程度条件下、数分〜数十分の短時間での乾燥時でも、洗浄剤の残渣が残らないという作用効果を奏するため、安全性や生産性に優れている。 The cleaning composition of the present invention comprises a tertiary amine (A) and water (B) exhibiting azeotropic properties with water, and the tertiary amine (A) and the water (B) in the cleaning composition. Since the weight ratio (%) of the tertiary amine (A) in the total is not more than the weight ratio of the tertiary amine (A) in the azeotrope composed of the tertiary amine (A) and water (B), for example, In the case of drying in a short time of several minutes to several tens of minutes under conditions of about 50 ° C. to 150 ° C., there is an effect that the residue of the cleaning agent does not remain, so that safety and productivity are excellent.
また、本発明の洗浄剤組成物が、さらに、水と共沸性を示す一般式(1):R1−O−[CH2−CH(X)−O]n−H(式(1)中、R1は炭素数1〜4のアルキル基を示し、nは1〜3を示し、Xは水素又はメチル基を示す。)で表されるグリコール系溶剤(C)を含む場合、前記洗浄剤組成物における前記グリコール系溶剤(C)と前記水(B)の合計中のグリコール系溶剤(C)の重量割合(%)が、グリコール系溶剤(C)及び水(B)からなる共沸混合物中のグリコール系溶剤(C)の重量割合以下であるため、例えば、50℃〜150℃程度条件下、数分〜数十分の短時間での乾燥時でも、洗浄剤の残渣が残らないという作用効果を奏するため、安全性や生産性に優れている。Further, the cleaning composition of the present invention further has a general formula (1) exhibiting an azeotropic property with water: R 1 —O— [CH 2 —CH (X) —O] n —H (formula (1)) Wherein R 1 represents an alkyl group having 1 to 4 carbon atoms, n represents 1 to 3, and X represents hydrogen or a methyl group. An azeotrope in which the weight ratio (%) of the glycol solvent (C) in the total of the glycol solvent (C) and the water (B) in the agent composition is composed of the glycol solvent (C) and water (B). Since it is less than the weight ratio of the glycol solvent (C) in the mixture, for example, no residue of the cleaning agent remains even when drying in a short time of several minutes to several tens of minutes under conditions of about 50 ° C to 150 ° C. As a result, it has excellent safety and productivity.
本発明の洗浄剤組成物は、水と共沸性を示す3級アミン(A)(以下、(A)成分ともいう。)及び水(B)(以下、(B)成分ともいう。)を含み、3級アミンの沸点が1気圧下(常圧下、標準大気圧下)で130〜250℃であり、前記3級アミン(A)と前記水(B)の合計中の3級アミン(A)の重量割合(%)が、3級アミン(A)及び水(B)からなる共沸混合物中の3級アミン(A)の重量割合以下(3級アミンの配合割合が水との共沸混合物の組成比以下)である。第3級アミン(A)の沸点が1気圧下で130℃未満であると、当該洗浄剤組成物の原液に引火の危険性が生じ、輸送、保管等の取り扱いが困難となる。一方、第3級アミン(A)の沸点が1気圧下で250℃を超えると、水との共沸混合物を形成し難く、乾燥性が悪くなる。従って、引火性及び乾燥性の点で好ましくは、140〜240℃程度、より好ましくは、150〜230℃程度である。 The cleaning composition of the present invention comprises tertiary amine (A) (hereinafter also referred to as component (A)) and water (B) (hereinafter also referred to as component (B)) exhibiting azeotropic properties with water. And the boiling point of the tertiary amine is 130 to 250 ° C. under 1 atmosphere (under normal pressure and standard atmospheric pressure), and the tertiary amine (A) in the total of the tertiary amine (A) and the water (B) ) Is less than or equal to the weight proportion of the tertiary amine (A) in the azeotropic mixture composed of the tertiary amine (A) and water (B) (the proportion of the tertiary amine is azeotropic with water). Less than the composition ratio of the mixture). When the boiling point of the tertiary amine (A) is less than 130 ° C. under 1 atm, there is a risk of ignition in the stock solution of the cleaning composition, and handling such as transportation and storage becomes difficult. On the other hand, when the boiling point of the tertiary amine (A) exceeds 250 ° C. under 1 atm, it is difficult to form an azeotrope with water and the drying property is deteriorated. Therefore, it is preferably about 140 to 240 ° C, more preferably about 150 to 230 ° C in terms of flammability and drying properties.
本発明の洗浄剤組成物は、前記3級アミン(A)と前記水(B)の合計中の3級アミン(A)の重量割合(%)が、3級アミン(A)及び水(B)からなる共沸混合物中の3級アミン(A)の重量割合以下である。当該3級アミン(A)及び水(B)からなる共沸混合物は、3級アミン(A)及び水(B)からなる混合物が共沸混合物(定沸点混合物)を形成する組成物を意味する。当該3級アミン(A)及び水(B)からなる混合物が共沸混合物を形成するときの、共沸混合物中の(A)の重量割合は、例えば、混合溶液を多段蒸留することにより得られる沸点100℃以下の留分を、ガスクロマトグラフィーにより分析し、絶対検量線法に従い定量することにより求められる。 In the cleaning composition of the present invention, the weight ratio (%) of the tertiary amine (A) in the total of the tertiary amine (A) and the water (B) is such that the tertiary amine (A) and water (B Or less than the weight proportion of the tertiary amine (A) in the azeotropic mixture. The azeotropic mixture composed of the tertiary amine (A) and water (B) means a composition in which the mixture composed of the tertiary amine (A) and water (B) forms an azeotropic mixture (constant boiling point mixture). . When the mixture of the tertiary amine (A) and water (B) forms an azeotrope, the weight ratio of (A) in the azeotrope is obtained by, for example, multistage distillation of the mixture solution. The fraction having a boiling point of 100 ° C. or less is determined by analyzing by gas chromatography and quantifying according to the absolute calibration curve method.
上記(A)成分としては、水と共沸性を示し、1気圧下で沸点が130〜250℃程度の3級アミンであれば、各種公知のものを特に制限なく使用できる。具体的には、パーティクルの除去力と乾燥性の点から、下記一般式(2)で表されるモノアミン(A1)(以下、(A1)成分ともいう。)、及び下記一般式(3)で表されるポリアミン(A2)(以下、(A2)成分ともいう。)が特に好ましい。(A)成分は、(A1)成分又は(A2)成分のいずれか1成分でもよいし、両方の成分を含んでもよい。 As the component (A), various known amines can be used without particular limitation as long as they are tertiary amines having an azeotropic property with water and having a boiling point of about 130 to 250 ° C. under 1 atm. Specifically, from the viewpoint of particle removal power and drying properties, the monoamine (A1) (hereinafter also referred to as the (A1) component) represented by the following general formula (2) and the following general formula (3): Polyamine (A2) represented (hereinafter also referred to as component (A2)) is particularly preferable. The component (A) may be either one of the component (A1) or the component (A2), or may include both components.
一般式(2):(R2)R3N−CH2−CH(Y)−OH
(式(2)中、R2及びR3はそれぞれ同一または異なる炭素数1〜3のアルキル基を示し、Yは水素又はメチル基を示す。)Formula (2) :( R 2) R 3 N-CH 2 -CH (Y) -OH
(In Formula (2), R 2 and R 3 each represent the same or different alkyl group having 1 to 3 carbon atoms, and Y represents hydrogen or a methyl group.)
一般式(3):(R4)R5N―C2H4―Z―C2H4―NR6(R7)
(式(3)中、R4、R5、R6、及びR7はそれぞれ同一または異なる炭素数1〜3のアルキル基を示し、Zは−CH2−、−(CH2)2−、−O−、−NH−、または−N(CH3)−を示す。)Formula (3): (R 4 ) R 5 N—C 2 H 4 —Z—C 2 H 4 —NR 6 (R 7 )
(In Formula (3), R 4 , R 5 , R 6 , and R 7 are the same or different alkyl groups having 1 to 3 carbon atoms, and Z is —CH 2 —, — (CH 2 ) 2 —, -O -, - NH-, or -N (CH 3) - indicates a).
前記一般式(2)中、R2及びR3のアルキル基は、炭素数2〜3が好ましく、2がより好ましい。また、Yは、水素が好ましい。In the general formula (2), the alkyl group represented by R 2 and R 3 preferably has 2 to 3 carbon atoms, and more preferably 2 carbon atoms. Y is preferably hydrogen.
前記一般式(3)中、R4、R5、R6、及びR7のアルキル基は、炭素数1〜2が好ましく、1がより好ましい。また、Zは、−CH2−、−(CH2)2−、または−O−が好ましく、−CH2−または−(CH2)2−がより好ましい。In the general formula (3), the alkyl group of R 4 , R 5 , R 6 , and R 7 preferably has 1 to 2 carbon atoms, and more preferably 1. Z is preferably —CH 2 —, — (CH 2 ) 2 —, or —O—, and more preferably —CH 2 — or — (CH 2 ) 2 —.
上記(A1)成分としては、例えば、2−(ジメチルアミノ)エタノール、2−(ジエチルアミノ)エタノール、2−(ジイソプロピルアミノ)エタノール、2−(ジ−n−プロピルアミノ)エタノール、1−ジメチルアミノ−2−プロパノール、1−ジエチルアミノ−2−プロパノール、1−ジイソプロピルアミノ−2−プロパノール及び1−ジ−n−プロピルアミノ−2−プロパノール等が挙げられる。これらは1種を単独で又は2種以上を組み合わせて用いることができる。これらの中でも特に、パーティクルの除去力の点及び引火の危険性の低さの点より、2−(ジエチルアミノ)エタノール、2−(ジイソプロピルアミノ)エタノール及び1−ジエチルアミノ−2−プロパノールからなる群より選ばれる少なくとも1種が好ましい。 Examples of the component (A1) include 2- (dimethylamino) ethanol, 2- (diethylamino) ethanol, 2- (diisopropylamino) ethanol, 2- (di-n-propylamino) ethanol, 1-dimethylamino- Examples include 2-propanol, 1-diethylamino-2-propanol, 1-diisopropylamino-2-propanol, and 1-di-n-propylamino-2-propanol. These can be used individually by 1 type or in combination of 2 or more types. Among these, especially from the point of the removal power of particles and the low risk of ignition, it is selected from the group consisting of 2- (diethylamino) ethanol, 2- (diisopropylamino) ethanol and 1-diethylamino-2-propanol. At least one selected from the above is preferred.
上記(A2)成分としては、例えば、N,N,N’,N’−テトラメチルペンタメチレンジアミン、N,N,N’,N’−テトラエチルペンタメチレンジアミン、N,N,N’,N’−テトライソプロピルペンタメチレンジアミン、N,N,N’,N’−テトラ−n−プロピルペンタメチレンジアミン、N,N,N’,N’−テトラメチルヘキサメチレンジアミン、N,N,N’,N’−テトラエチルヘキサメチレンジアミン、N,N,N’,N’−テトライソプロピルヘキサメチレンジアミン、N,N,N’,N’−テトラ−n−プロピルヘキサメチレンジアミン、ビス(2−ジメチルアミノエチル)エーテル、ビス(2−ジエチルアミノエチル)エーテル、ビス(2−ジイソプロピルアミノエチル)エーテル、ビス(2−ジ−n−プロピルアミノエチル)エーテル、1,1,7,7−テトラメチルジエチレントリアミン、1,1,7,7−テトラエチルジエチレントリアミン、1,1,7,7−テトライソプロピルジエチレントリアミン、1,1,7,7−テトラ−n−プロピルジエチレントリアミン、N,N,N’,N’’,N’’−ペンタメチルジエチレントリアミン、4−メチル−1,1,7,7−テトラエチルジエチレントリアミン、4−メチル−1,1,7,7−テトライソプロピルジエチレントリアミン及び4−メチル−1,1,7,7−テトラ−n−プロピルジエチレントリアミン等が挙げられる。これらは1種を単独で又は2種以上を組み合わせて用いることができる。これらの中でも特に、パーティクルの除去力の点及び引火の危険性の低さの点より、N,N,N’,N’−テトラメチルヘキサメチレンジアミン、ビス(2−ジメチルアミノエチル)エーテル及びN,N,N’,N’’,N’’−ペンタメチルジエチレントリアミンからなる群より選ばれる少なくとも1種が好ましい。 Examples of the component (A2) include N, N, N ′, N′-tetramethylpentamethylenediamine, N, N, N ′, N′-tetraethylpentamethylenediamine, N, N, N ′, N ′. -Tetraisopropylpentamethylenediamine, N, N, N ', N'-tetra-n-propylpentamethylenediamine, N, N, N', N'-tetramethylhexamethylenediamine, N, N, N ', N '-Tetraethylhexamethylenediamine, N, N, N', N'-tetraisopropylhexamethylenediamine, N, N, N ', N'-tetra-n-propylhexamethylenediamine, bis (2-dimethylaminoethyl) Ether, bis (2-diethylaminoethyl) ether, bis (2-diisopropylaminoethyl) ether, bis (2-di-n-propylene) Aminoethyl) ether, 1,1,7,7-tetramethyldiethylenetriamine, 1,1,7,7-tetraethyldiethylenetriamine, 1,1,7,7-tetraisopropyldiethylenetriamine, 1,1,7,7-tetra- n-propyldiethylenetriamine, N, N, N ′, N ″, N ″ -pentamethyldiethylenetriamine, 4-methyl-1,1,7,7-tetraethyldiethylenetriamine, 4-methyl-1,1,7,7 -Tetraisopropyldiethylenetriamine, 4-methyl-1,1,7,7-tetra-n-propyldiethylenetriamine and the like. These can be used individually by 1 type or in combination of 2 or more types. Among these, N, N, N ′, N′-tetramethylhexamethylenediamine, bis (2-dimethylaminoethyl) ether, and N are particularly preferred from the viewpoint of particle removal ability and low risk of ignition. , N, N ′, N ″, N ″ -Pentamethyldiethylenetriamine is preferably at least one selected from the group consisting of
上記(B)成分としては、超純水、純水、精製水、蒸留水、イオン交換水及び水道水等が挙げられる。 Examples of the component (B) include ultrapure water, pure water, purified water, distilled water, ion exchange water, and tap water.
本発明の洗浄剤組成物は、上記(A)成分と(B)成分の合計中の3級アミン(A)の重量割合(A/(A+B))が、1/100000以上であることが、パーティクルの除去性の点で好ましい。より好ましくは、1/80000以上であり、さらに好ましくは、1/20000以上であり、よりさらに好ましくは、1/5000以上である。 In the cleaning composition of the present invention, the weight ratio (A / (A + B)) of the tertiary amine (A) in the total of the components (A) and (B) is 1/100000 or more. It is preferable in terms of particle removability. More preferably, it is 1/80000 or more, More preferably, it is 1/20000 or more, More preferably, it is 1/5000 or more.
本発明の洗浄剤組成物は、パーティクル除去性の点で、水と共沸性を示す一般式(1):R1−O−[CH2−CH(X)−O]n−H(式(1)中、R1は炭素数1〜4のアルキル基を示し、nは1〜3を示し、Xは水素又はメチル基を示す。)で表されるグリコール系溶剤(C)(以下、(C)成分ともいう。)を含み、前記グリコール系溶剤(C)の沸点が、1気圧下で120〜275℃であり、前記洗浄剤組成物における前記グリコール系溶剤(C)と前記水(B)の合計中のグリコール系溶剤(C)の重量割合(%)が、グリコール系溶剤(C)及び水(B)からなる共沸混合物中のグリコール系溶剤(C)の重量割合以下含むことが好ましい。The cleaning composition of the present invention has a general formula (1) that exhibits azeotropicity with water in terms of particle removability: R 1 —O— [CH 2 —CH (X) —O] n —H (formula In (1), R 1 represents an alkyl group having 1 to 4 carbon atoms, n represents 1 to 3, and X represents hydrogen or a methyl group). The glycol solvent (C) has a boiling point of 120 to 275 ° C. under 1 atm, and the glycol solvent (C) and the water (in the cleaning composition) The weight ratio (%) of the glycol solvent (C) in the total of B) is not more than the weight ratio of the glycol solvent (C) in the azeotropic mixture composed of the glycol solvent (C) and water (B). Is preferred.
上記のグリコール系溶剤(C)及び水(B)からなる共沸混合物は、(C)及び(B)からなる混合物が共沸混合物(定沸点混合物)を形成する組成物を意味する。当該グリコール系溶剤(C)及び水(B)からなる混合物が共沸混合物を形成するときの、共沸混合物中の(C)の重量割合は、例えば、混合溶液を多段蒸留することにより得られる沸点100℃以下の留分を、ガスクロマトグラフィーにより分析し、絶対検量線法に従い定量することにより求められる。 The azeotrope composed of the glycol solvent (C) and water (B) means a composition in which the mixture composed of (C) and (B) forms an azeotrope (constant boiling point mixture). When the mixture of the glycol solvent (C) and water (B) forms an azeotrope, the weight ratio of (C) in the azeotrope is obtained, for example, by subjecting the mixture solution to multistage distillation. The fraction having a boiling point of 100 ° C. or less is determined by analyzing by gas chromatography and quantifying according to the absolute calibration curve method.
前記一般式(1)中、R1のアルキル基は、炭素数1〜3が好ましく、1〜2がより好ましい。また、Xは、メチル基が好ましい。また、nは、2〜3が好ましく、3がより好ましい。In the general formula (1), the alkyl group for R 1 is preferably 1 to 3 carbon atoms, 1 to 2 is more preferred. X is preferably a methyl group. Further, n is preferably 2 to 3, and more preferably 3.
上記(C)成分としては、例えば、エチレングリコールモノメチルエーテル、エチレングリコールモノエチルエーテル、エチレングリコールモノ−n−プロピルエーテル、エチレングリコールモノイソプロピルエーテル、エチレングリコールモノ−n−ブチルエーテル、エチレングリコールモノイソブチルエーテル、エチレングリコールモノ−sec−ブチルエーテル、エチレングリコールモノ−tert−ブチルエーテル、プロピレングリコールモノメチルエーテル、プロピレングリコールモノエチルエーテル、プロピレングリコールモノ−n−プロピルエーテル、プロピレングリコールモノイソプロピルエーテル、プロピレングリコールモノ−n−ブチルエーテル、プロピレングリコールモノイソブチルエーテル、プロピレングリコールモノ−sec−ブチルエーテル、プロピレングリコールモノ−tert−ブチルエーテル、ジエチレングリコールモノメチルエーテル、ジエチレングリコールモノエチルエーテル、ジエチレングリコールモノ−n−プロピルエーテル、ジエチレングリコールモノイソプロピルエーテル、ジエチレングリコールモノ−n−ブチルエーテル、ジエチレングリコールモノイソブチルエーテル、ジエチレングリコールモノ−sec−ブチルエーテル、ジエチレングリコールモノ−tert−ブチルエーテル、ジプロピレングリコールモノメチルエーテル、ジプロピレングリコールモノエチルエーテル、ジプロピレングリコールモノ−n−プロピルエーテル、ジプロピレングリコールモノイソプロピルエーテル、ジプロピレングリコールモノ−n−ブチルエーテル、ジプロピレングリコールモノイソブチルエーテル、ジプロピレングリコールモノ−sec−ブチルエーテル、ジプロピレングリコールモノ−tert−ブチルエーテル、トリエチレングリコールモノメチルエーテル、トリエチレングリコールモノエチルエーテル、トリエチレングリコールモノ−n−プロピルエーテル、トリエチレングリコールモノイソプロピルエーテル、トリエチレングリコールモノ−n−ブチルエーテル、トリエチレングリコールモノイソブチルエーテル、トリエチレングリコールモノ−sec−ブチルエーテル、トリエチレングリコールモノ−tert−ブチルエーテル、トリプロピレングリコールモノメチルエーテル、トリプロピレングリコールモノエチルエーテル、トリプロピレングリコールモノ−n−プロピルエーテル、トリプロピレングリコールモノイソプロピルエーテル、トリプロピレングリコールモノ−n−ブチルエーテル、トリプロピレングリコールモノイソブチルエーテル、トリプロピレングリコールモノ−sec−ブチルエーテル、トリプロピレングリコールモノ−tert−ブチルエーテル等が挙げられる。これらは1種を単独で又は2種以上を組み合わせても良い。これらの中でも特に、パーティクルの除去力の点及び引火の危険性の低さの点より、ジエチレングリコールモノ−n−ブチルエーテル、ジプロピレングリコールモノメチルエーテル及びトリプロピレングリコールモノメチルエーテルからなる群より選ばれる少なくとも1種が好ましい。 Examples of the component (C) include ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol mono-n-propyl ether, ethylene glycol monoisopropyl ether, ethylene glycol mono-n-butyl ether, ethylene glycol monoisobutyl ether, Ethylene glycol mono-sec-butyl ether, ethylene glycol mono-tert-butyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol mono-n-propyl ether, propylene glycol monoisopropyl ether, propylene glycol mono-n-butyl ether, Propylene glycol monoisobutyl ether, propylene glycol No-sec-butyl ether, propylene glycol mono-tert-butyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol mono-n-propyl ether, diethylene glycol monoisopropyl ether, diethylene glycol mono-n-butyl ether, diethylene glycol monoisobutyl ether, diethylene glycol mono -Sec-butyl ether, diethylene glycol mono-tert-butyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether, dipropylene glycol mono-n-propyl ether, dipropylene glycol monoisopropyl ether, dipropylene glycol mono-n-butyl Ether, dipropylene glycol monoisobutyl ether, dipropylene glycol mono-sec-butyl ether, dipropylene glycol mono-tert-butyl ether, triethylene glycol monomethyl ether, triethylene glycol monoethyl ether, triethylene glycol mono-n-propyl ether, Triethylene glycol monoisopropyl ether, triethylene glycol mono-n-butyl ether, triethylene glycol monoisobutyl ether, triethylene glycol mono-sec-butyl ether, triethylene glycol mono-tert-butyl ether, tripropylene glycol monomethyl ether, tripropylene glycol Monoethyl ether, tripropylene glycol mono-n- Examples include propyl ether, tripropylene glycol monoisopropyl ether, tripropylene glycol mono-n-butyl ether, tripropylene glycol monoisobutyl ether, tripropylene glycol mono-sec-butyl ether, and tripropylene glycol mono-tert-butyl ether. These may be used alone or in combination of two or more. Among these, at least one selected from the group consisting of diethylene glycol mono-n-butyl ether, dipropylene glycol monomethyl ether, and tripropylene glycol monomethyl ether, in terms of particle removal power and low risk of ignition. Is preferred.
また、(C)成分は、乾燥性が良好となる点及び洗浄剤原液の引火を抑制できる点でその1気圧下の沸点が120〜275℃程度、好ましくは130〜260℃程度、一層好ましくは140〜250℃程度である。 In addition, the component (C) has a boiling point of about 120 to 275 ° C., preferably about 130 to 260 ° C., more preferably about 1 to 1 atm in terms of good drying properties and suppression of ignition of the detergent stock solution. It is about 140-250 degreeC.
なお、(C)成分を加える場合、本発明の洗浄剤組成物は、上記(A)成分と(B)成分と(C)成分の合計中の(A)成分と(C)成分の重量割合((A+C)/(A+B+C))が、1/100000以上であることが、パーティクルの除去性の点で好ましい。より好ましくは、1/80000以上であり、さらに好ましくは、1/20000以上であり、よりさらに好ましくは、1/5000以上である。 In addition, when adding (C) component, the cleaning composition of this invention is the weight ratio of (A) component and (C) component in the sum total of the said (A) component, (B) component, and (C) component. ((A + C) / (A + B + C)) is preferably 1/100000 or more from the viewpoint of particle removability. More preferably, it is 1/80000 or more, More preferably, it is 1/20000 or more, More preferably, it is 1/5000 or more.
本発明の洗浄剤組成物中の(A)成分及び(B)成分の合計割合、あるいは、(A)成分、(B)成分及び(C)成分の合計割合は、80重量%以上が好ましく、90重量%以上がより好ましく、95重量%以上がさらに好ましく、98重量%以上がよりさらに好ましく、100重量%がよりさらに好ましい。 The total proportion of the component (A) and the component (B) in the cleaning composition of the present invention, or the total proportion of the component (A), the component (B) and the component (C) is preferably 80% by weight or more, 90% by weight or more is more preferable, 95% by weight or more is further preferable, 98% by weight or more is further more preferable, and 100% by weight is further more preferable.
本発明の洗浄剤組成物は、(A)成分及び(B)成分、必要に応じて(C)成分を各種公知の手段で混合することにより調製する。 The cleaning composition of the present invention is prepared by mixing the component (A) and the component (B) and, if necessary, the component (C) by various known means.
本発明の洗浄剤組成物は、電子材料の洗浄剤として用いられる。電子材料としては、例えば、フォトマスク、光学レンズ、真空放電管、タッチパネル、表示デバイス用ガラス等のガラス加工品、メタルマスク、パレット、リードフレーム、磁気ディスク、ヒートシンク等の金属加工品、ガラスエポキシ基板、ポリイミド基板、紙フェノール基板、プラスチックモールド部品等の樹脂加工品、シリコン(Si)、サファイア(Al2O3)、炭化ケイ素(SiC)、ダイヤモンド(C)、窒化ガリウム(GaN)、燐化ガリウム(GaP)、砒化ガリウム(GaAs)、燐化インジウム(InP)等のウエハ及びそれらの、切断(スライシング、ダイシング等)、研削(バックグラインド、ブラスト等)、面取り(ベベリング、バレル等)、研磨(ラッピング、ポリシング、バフ等)加工品、更には、それらの物品を加工、実装、溶接、洗浄、搬送する際に使用する治具、キャリア、マガジン等が含まれる。The cleaning composition of the present invention is used as a cleaning agent for electronic materials. Examples of electronic materials include glass processed products such as photomasks, optical lenses, vacuum discharge tubes, touch panels, glass for display devices, metal processed products such as metal masks, pallets, lead frames, magnetic disks, heat sinks, and glass epoxy substrates. Resin processed products such as polyimide substrate, paper phenol substrate, plastic mold parts, silicon (Si), sapphire (Al 2 O 3 ), silicon carbide (SiC), diamond (C), gallium nitride (GaN), gallium phosphide (GaP), gallium arsenide (GaAs), indium phosphide (InP), and the like, and cutting (slicing, dicing, etc.), grinding (back grinding, blasting, etc.), chamfering (beveling, barrel, etc.), polishing ( Wrapping, polishing, buffing, etc.) These items include jigs, carriers, magazines, and the like used when processing, mounting, welding, cleaning, and transporting these articles.
また、電子材料としては、プリント回路基板、フレキシブル配線基板、セラミック配線基板、半導体素子、半導体パッケージ、磁気メディア、パワーモジュール及びカメラモジュール等の電子部品、更には、それらの物品を加工、実装、溶接、洗浄、搬送する際に使用する治具、キャリア、マガジン等が挙げられる。 Electronic materials include printed circuit boards, flexible wiring boards, ceramic wiring boards, semiconductor elements, semiconductor packages, magnetic media, power modules, camera modules, and other electronic parts, as well as processing, mounting, and welding of these articles. , Jigs, carriers, magazines and the like used for cleaning and transporting.
本発明の洗浄剤組成物は、乾燥性に影響しない範囲で、各種公知の添加剤を配合してもよい。添加剤として、具体的には、非イオン性界面活性剤、アニオン性界面活性剤、カチオン性界面活性剤、両性界面活性剤、高分子型界面活性剤、キレート剤、酸化防止剤、防錆剤、封孔処理剤、pH調整剤及び消泡剤等が挙げられる。 The cleaning composition of the present invention may contain various known additives as long as it does not affect the drying property. Specific examples of additives include nonionic surfactants, anionic surfactants, cationic surfactants, amphoteric surfactants, polymer surfactants, chelating agents, antioxidants, and rust inhibitors. , Sealing agents, pH adjusters and antifoaming agents.
水で希釈することにより、上記電子材料用の洗浄剤組成物を調製することができる洗浄剤原液もまた本発明の1つである。本発明の洗浄剤原液には、パーティクルの洗浄に有効な成分が濃縮されており、効率の良い輸送、保管が可能となる。また、この洗浄剤原液は少量でも優れた洗浄性を発現するため、使用時に水で希釈する際、水の重量比率を高めることができ、コスト、環境負荷が低減される点でも優れている。 A cleaning agent stock solution capable of preparing the cleaning composition for electronic materials by diluting with water is also one aspect of the present invention. In the cleaning agent stock solution of the present invention, components effective for cleaning particles are concentrated, and efficient transportation and storage are possible. In addition, since this detergent stock solution exhibits excellent detergency even in a small amount, when diluted with water at the time of use, the weight ratio of water can be increased, and this is also excellent in terms of reducing cost and environmental burden.
本発明の洗浄剤組成物を用いた電子材料の洗浄工程を含む洗浄方法もまた本発明の1つである。洗浄工程は、本発明に係る洗浄剤組成物をパーティクルが付着した電子材料に接触させ、パーティクルを洗い落とす工程である。当該洗浄方法は、各種公知のリンス剤により電子材料から洗浄剤成分を洗い落とすためのすすぎ工程を含まなくてもよい。これにより、すすぎ工程に掛かるコスト及び時間の削減が可能となる。洗浄対象となるパーティクルは特に限定されないが、代表的なものとして、例えば、化学機械研磨(CMP)及び機械的研磨に使用される、シリカ(SiO2)、アルミナ(Al2O3)、セリア(CeO2)等の微粒子、ダイヤモンド、ガーネット、ステンレス、鋼、鉄、銅、亜鉛、アルミ、セラミック、ガラス、珪砂、プラスチック等の硬質粒子及び上記電子材料を、切断(スライシング、ダイシング等)、研削(バックグラインド、ブラスト等)、面取り(ベベリング、バレル等)、研磨(ラッピング、ポリシング、バフ等)加工する際に発生する、切り粉、破片、研磨屑、更には、上記電子材料及び電子部品を加工、実装、溶接、洗浄、搬送する際に生じる有機物残渣、無機物残渣などが挙げられる。A cleaning method including a cleaning step of an electronic material using the cleaning composition of the present invention is also one aspect of the present invention. The cleaning step is a step in which the cleaning composition according to the present invention is brought into contact with the electronic material to which the particles adhere to wash off the particles. The cleaning method may not include a rinsing step for washing away the cleaning agent component from the electronic material with various known rinse agents. Thereby, the cost and time required for the rinsing process can be reduced. The particles to be cleaned are not particularly limited, but representative examples include silica (SiO 2 ), alumina (Al 2 O 3 ), ceria (used for chemical mechanical polishing (CMP) and mechanical polishing, for example. Cutting (slicing, dicing, etc.) and grinding of hard particles such as fine particles such as CeO 2 ), diamond, garnet, stainless steel, steel, iron, copper, zinc, aluminum, ceramic, glass, silica sand, plastic, and the above electronic materials ( Back grinding, blasting, etc.), chamfering (beveling, barreling, etc.), polishing (lapping, polishing, buffing, etc.), cutting chips, debris, polishing debris, and the above electronic materials and electronic parts are processed. , Organic residue, inorganic residue and the like generated during mounting, welding, cleaning, and transportation.
その他のパーティクルとしては、例えば、上記電子材料及び電子部品の製造工程全般において、物品に付着する塵、埃等が挙げられる。 Examples of the other particles include dust, dust, and the like attached to articles in the entire manufacturing process of the electronic material and electronic component.
本発明の洗浄剤組成物をパーティクルが付着した物品に接触させ、物品を洗浄する手段は限定されず、洗浄手段としては、例えば、浸漬洗浄、シャワー洗浄、スプレー洗浄、超音波洗浄、液中ジェット洗浄、直通式洗浄(ダイレクトパス(登録商標))等が挙げられる。また、公知の洗浄装置として、例えば、特開平7−328565号公報、特開2000−189912号公報、特開2001−932号公報、特開2005−144441号公報等が挙げられる。なお、本発明の洗浄剤組成物および洗浄剤原液は、非危険物であるため燃焼しない。そのため防爆設備も不要となることから、シャワー洗浄やスプレー洗浄にも好適である。 The means for cleaning the article by bringing the cleaning composition of the present invention into contact with the article to which particles are attached is not limited. Examples of the cleaning means include immersion cleaning, shower cleaning, spray cleaning, ultrasonic cleaning, and submerged jet. Cleaning, direct cleaning (Direct Pass (registered trademark)) and the like can be mentioned. Moreover, as a well-known washing | cleaning apparatus, Unexamined-Japanese-Patent No. 7-328565, Unexamined-Japanese-Patent No. 2000-189912, Unexamined-Japanese-Patent No. 2001-932, Unexamined-Japanese-Patent No. 2005-144441 etc. are mentioned, for example. In addition, since the cleaning composition and the cleaning agent stock solution of the present invention are non-hazardous materials, they do not burn. Therefore, explosion-proof equipment is not necessary, and it is suitable for shower cleaning and spray cleaning.
本発明の洗浄剤組成物は、乾燥工程において容易に揮発させることが可能であるため、洗浄後の物品に残渣が残存しない。そのため、物品のすすぎ工程を省略できる。ただし、必要に応じ、本発明と同一の洗浄剤又は各種公知のリンス剤ですすぐことができる。該リンス剤としては、純水及びイオン交換水等の水、メチルアルコール、エチルアルコール及びイソプロピルアルコール等のアルコール類が挙げられる。 Since the cleaning composition of the present invention can be easily volatilized in the drying step, no residue remains in the cleaned article. Therefore, the article rinsing step can be omitted. However, if necessary, it can be rinsed with the same cleaning agent or various known rinsing agents as in the present invention. Examples of the rinse agent include water such as pure water and ion exchange water, and alcohols such as methyl alcohol, ethyl alcohol and isopropyl alcohol.
以下、実施例及び比較例を挙げて本発明方法を更に詳しく説明するが、本発明がこれらに限定されないことはもとよりである。なお、実施例中、部または%は重量基準である。また、以下の洗浄剤原液に使用した各種3級アミン(A)およびグリコール系溶剤(C)について、その構造、1気圧下での沸点、水との共沸混合物の組成比(重量割合)について、表2、表3に示す。 EXAMPLES Hereinafter, although an Example and a comparative example are given and this invention method is demonstrated in more detail, it cannot be overemphasized that this invention is not limited to these. In the examples, parts or% is based on weight. Regarding the various tertiary amines (A) and glycol solvents (C) used in the following detergent stock solutions, the structure, boiling point under 1 atmosphere, composition ratio (weight ratio) of azeotrope with water Table 2 and Table 3 show.
[共沸混合物の組成比]
200mlのナス型フラスコに、(A)成分25重量部、イオン交換水100重量部を入れ、マグネチックスターラーにより十分に混合し、(A)成分を含む水溶液を調製した。次いで、当該ナス型フラスコに理論段数N=10に相当する蒸留カラム、ト字管、温度計及びリービッヒ冷却器を接続した。次いで、1気圧下、当該ナス型フラスコをオイルバスで加熱し、混合溶液を沸騰させることにより、沸点100℃以下の留分のみを採取した。[Composition ratio of azeotropic mixture]
A 200 ml eggplant-shaped flask was charged with 25 parts by weight of component (A) and 100 parts by weight of ion-exchanged water, and thoroughly mixed with a magnetic stirrer to prepare an aqueous solution containing component (A). Next, a distillation column, a T-tube, a thermometer, and a Liebig condenser corresponding to the theoretical plate number N = 10 were connected to the eggplant-shaped flask. Subsequently, the eggplant-shaped flask was heated with an oil bath under 1 atm to boil the mixed solution, whereby only a fraction having a boiling point of 100 ° C. or less was collected.
次に、当該留分における前記(A)成分を、ガスクロマトグラフィー6850 Network GC System(Agilent Technologies社製)において、絶対検量線法に従い、定量した。また(C)成分についても(A)成分に変えて同様の方法で定量した。 Next, the component (A) in the fraction was quantified in a gas chromatography 6850 Network GC System (manufactured by Agilent Technologies) according to an absolute calibration curve method. The component (C) was also quantified by the same method in place of the component (A).
1.洗浄剤原液の調製
調製例1
ビーカーにイオン交換水100重量部、前記(A)成分として2−(ジエチルアミノ)エタノール(DEAE)20重量部、前記(C)成分としてジプロピレングリコールモノメチルエーテル(DPGMME)80重量部及びスターラーピースを入れ、マグネチックスターラーにより十分に攪拌し、洗浄剤原液を調製した。1. Preparation of detergent stock solution Preparation Example 1
In a beaker, 100 parts by weight of ion-exchange water, 20 parts by weight of 2- (diethylamino) ethanol (DEAE) as the component (A), 80 parts by weight of dipropylene glycol monomethyl ether (DPGMME) and the stirrer piece as the component (C) Then, the mixture was sufficiently stirred with a magnetic stirrer to prepare a detergent stock solution.
調製例2
ビーカーにイオン交換水100重量部、前記(A)成分としてDEAE20重量部、前記(C)成分としてトリプロピレングリコールモノメチルエーテル(TPGMME)80重量部及びスターラーピースを入れ、マグネチックスターラーにより十分に攪拌し、洗浄剤原液を調製した。Preparation Example 2
In a beaker, 100 parts by weight of ion-exchanged water, 20 parts by weight of DEAE as the component (A), 80 parts by weight of tripropylene glycol monomethyl ether (TPGMME) and a stirrer piece as the component (C) are sufficiently stirred with a magnetic stirrer. A stock detergent solution was prepared.
調製例3
ビーカーにイオン交換水100重量部、前記(A)成分としてN,N,N’,N’,−テトラメチルヘキサメチレンジアミン(TMHMDA)20重量部、前記(C)成分としてTPGMME80重量部及びスターラーピースを入れ、マグネチックスターラーにより十分に攪拌し、洗浄剤原液を調製した。Preparation Example 3
100 parts by weight of ion-exchanged water in a beaker, 20 parts by weight of N, N, N ′, N ′,-tetramethylhexamethylenediamine (TMHMDA) as the component (A), 80 parts by weight of TPGMME and the stirrer piece as the component (C) And thoroughly stirred with a magnetic stirrer to prepare a stock solution of cleaning agent.
調製例4
ビーカーにイオン交換水100重量部、前記(A)成分としてTMHMDA20重量部、前記(C)成分としてジエチレングリコールモノ−n−ブチルエーテル(DEGMBE)80重量部及びスターラーピースを入れ、マグネチックスターラーにより十分に攪拌し、洗浄剤原液を調製した。Preparation Example 4
In a beaker, 100 parts by weight of ion-exchanged water, 20 parts by weight of TMHMDA as the component (A), 80 parts by weight of diethylene glycol mono-n-butyl ether (DEGMBE) and a stirrer piece as the component (C) are sufficiently stirred with a magnetic stirrer. A detergent stock solution was prepared.
調製例5
ビーカーにイオン交換水100重量部、前記(A)成分としてビス(2−ジメチルアミノエチル)エーテル(BDMAEE)20重量部、前記(C)成分としてDEGMBE80重量部及びスターラーピースを入れ、マグネチックスターラーにより十分に攪拌し、洗浄剤原液を調製した。Preparation Example 5
In a beaker, 100 parts by weight of ion-exchanged water, 20 parts by weight of bis (2-dimethylaminoethyl) ether (BDMAEE) as the component (A), 80 parts by weight of DEGMBE and the stirrer piece as the component (C) were added. The mixture was thoroughly stirred to prepare a detergent stock solution.
調製例6
ビーカーにイオン交換水100重量部、前記(A)成分としてDEAE100重量部及びスターラーピースを入れ、マグネチックスターラーにより十分に攪拌し、洗浄剤原液を調製した。Preparation Example 6
In a beaker, 100 parts by weight of ion-exchanged water, 100 parts by weight of DEAE and the stirrer piece as the component (A) were placed, and sufficiently stirred with a magnetic stirrer to prepare a detergent stock solution.
調製例7
ビーカーにイオン交換水100重量部、前記(A)成分としてTMHMDA100重量部及びスターラーピースを入れ、マグネチックスターラーにより十分に攪拌し、洗浄剤原液を調製した。Preparation Example 7
In a beaker, 100 parts by weight of ion-exchanged water, 100 parts by weight of TMHMDA and a stirrer piece as the component (A) were placed, and sufficiently stirred with a magnetic stirrer to prepare a detergent stock solution.
調製例8
ビーカーにイオン交換水100重量部、前記(A)成分としてBDMAEE100重量部及びスターラーピースを入れ、マグネチックスターラーにより十分に攪拌し、洗浄剤原液を調製した。Preparation Example 8
A beaker was charged with 100 parts by weight of ion-exchanged water, 100 parts by weight of BDMAEE as the component (A) and a stirrer piece, and sufficiently stirred with a magnetic stirrer to prepare a detergent stock solution.
比較調製例1
ビーカーにイオン交換水100重量部、前記(A)成分としてN−ブチルジエタノールアミン(BDEA)20重量部、前記(C)成分としてテトラエチレングリコールモノメチルエーテル(TEGMME)80重量部及びスターラーピースを入れ、マグネチックスターラーにより十分に攪拌し、洗浄剤原液を調製した。Comparative Preparation Example 1
In a beaker, 100 parts by weight of ion-exchanged water, 20 parts by weight of N-butyldiethanolamine (BDEA) as the component (A), 80 parts by weight of tetraethylene glycol monomethyl ether (TEGMME) and the stirrer piece as the component (C) were added. The mixture was sufficiently stirred with a tic stirrer to prepare a stock detergent solution.
比較調製例2
ビーカーにイオン交換水100重量部、前記(A)成分としてBDEA100重量部及びスターラーピースを入れ、マグネチックスターラーにより十分に攪拌し、洗浄剤原液を調製した。Comparative Preparation Example 2
In a beaker, 100 parts by weight of ion-exchanged water, 100 parts by weight of BDEA and the stirrer piece as the component (A) were placed, and sufficiently stirred with a magnetic stirrer to prepare a detergent stock solution.
比較調製例3
ビーカーにイオン交換水100重量部、前記(A)成分として2−(2−アミノエチルアミノ)エタノール(AEAE)100重量部及びスターラーピースを入れ、マグネチックスターラーにより十分に攪拌し、洗浄剤原液を調製した。Comparative Preparation Example 3
Place 100 parts by weight of ion-exchanged water in a beaker, 100 parts by weight of 2- (2-aminoethylamino) ethanol (AEAE) as a component (A) and a stirrer piece, and stir well with a magnetic stirrer. Prepared.
比較調製例4
ビーカーにイオン交換水100重量部、前記(C)成分としてポリオキシエチレンアルキルエーテル(POEAE)100重量部及びスターラーピースを入れ、マグネチックスターラーにより十分に攪拌し、洗浄剤原液を調製した。Comparative Preparation Example 4
A beaker was charged with 100 parts by weight of ion-exchanged water, 100 parts by weight of polyoxyethylene alkyl ether (POEAE) as a component (C) and a stirrer piece, and sufficiently stirred with a magnetic stirrer to prepare a detergent stock solution.
比較調製例5
ビーカーにイオン交換水100重量部、前記(A)成分としてジエチルアミン(DEA)100重量部及びスターラーピースを入れ、マグネチックスターラーにより十分に攪拌し、洗浄剤原液を調製した。Comparative Preparation Example 5
A beaker was charged with 100 parts by weight of ion-exchanged water, 100 parts by weight of diethylamine (DEA) as a component (A) and a stirrer piece, and sufficiently stirred with a magnetic stirrer to prepare a detergent stock solution.
比較調製例6
イオン交換水そのものを洗浄剤原液として使用した。Comparative Preparation Example 6
Ion exchange water itself was used as a detergent stock solution.
2.洗浄剤原液の引火性
[引火性の評価方法]
各々の洗浄剤原液の引火点を、クリーブランド開放法(JIS K2265−4)に準拠して測定し、引火性を以下の基準で評価した。表1に結果を示す。2. Flammability of cleaning agent stock solution [Flammability evaluation method]
The flash point of each detergent stock solution was measured according to the Cleveland Opening Method (JIS K2265-4), and the flammability was evaluated according to the following criteria. Table 1 shows the results.
[引火性の評価基準]
○:引火点無し、もしくは引火点が100℃以上
×:引火点が100℃未満[Flammability evaluation criteria]
○: No flash point or flash point is 100 ° C or higher ×: Flash point is lower than 100 ° C
3.洗浄剤組成物のパーティクル除去性
[汚染液の調製]
スクリュー管(容量20mL)(A)にアセトン(和光純薬工業(株)製、純度99.5%以上)9.9gと結晶性シリカフィラー(商品名「クリスタライト VX−S2」、(株)龍森製、平均粒子径5μm)0.1gを入れ、よく振盪し、濃度1%の汚染液(A)を10g調製した。続いて、他のスクリュー管(A’)に汚染液(A)1gとアセトン9gを入れ、よく振盪し、濃度0.1%の汚染液(A’)を10g調製した。3. Particle removal property of cleaning composition [Preparation of contaminated liquid]
9.9 g of acetone (made by Wako Pure Chemical Industries, Ltd., purity 99.5% or more) and crystalline silica filler (trade name “Crystallite VX-S2”, Co., Ltd.) 0.1 g (manufactured by Tatsumori,
同様に、スクリュー管(B)にアセトン9.9gと球状シリカ(商品名「Sciqas」、堺化学工業(株)製、平均粒子径1μm)0.1gを入れ、よく振盪し、濃度1%の汚染液(B)を10g調製した。続いて、他のスクリュー管(B’)に汚染液(B)1gとアセトン9gを入れ、よく振盪し、濃度0.1%の汚染液(B’)を10g調製した。
Similarly, 9.9 g of acetone and 0.1 g of spherical silica (trade name “Sciqas”, manufactured by Sakai Chemical Industry Co., Ltd.,
同様に、スクリュー管(C)にアセトン9.9gとアルミナ粒子(商品名「精密研磨用α−アルミナ」、和光純薬工業(株)製、平均粒子径0.5μm)0.1gを入れ、よく振盪し、濃度1%の汚染液(C)を10g調製した。続いて、他のスクリュー管(C’)に汚染液(C)1gとアセトン9gを入れ、よく振盪し、濃度0.1%の汚染液(C’)を10g調製した。 Similarly, 9.9 g of acetone and 0.1 g of alumina particles (trade name “α-alumina for precision polishing”, manufactured by Wako Pure Chemical Industries, Ltd., average particle size 0.5 μm) are put into the screw tube (C), The mixture was shaken well to prepare 10 g of a contaminated liquid (C) having a concentration of 1%. Subsequently, 1 g of the contaminated liquid (C) and 9 g of acetone were put into another screw tube (C ′), and shaken well to prepare 10 g of 0.1% of the contaminated liquid (C ′).
[試験用ウエハの作製]
次に、汚染液(A)0.02gを高純度シリコンウエハ(アズワン(株)製、直径φ4inch)の中心に滴下し、自然乾燥させ、試験用ウエハ(A)を作製した。また、汚染液(B)、(C)及び(A’)〜(C’)、についても同様に高純度シリコンウエハに滴下し、自然乾燥させ、試験用ウエハ(B)、(C)及び(A’)〜(C’)をそれぞれ作製した。[Production of test wafers]
Next, 0.02 g of the contaminated liquid (A) was dropped on the center of a high-purity silicon wafer (manufactured by ASONE Co., Ltd., diameter φ4 inch) and allowed to dry naturally to prepare a test wafer (A). Similarly, the contaminated liquids (B), (C) and (A ′) to (C ′) are dropped on a high-purity silicon wafer and dried naturally, and the test wafers (B), (C) and ( A ′) to (C ′) were prepared.
[パーティクル除去性の評価方法]
実施例1
図1に示すように、ビーカー(1)(容量1000mL、胴径φ110mm、高さ150mm)に調製例1の洗浄剤原液40.0g(2)、イオン交換水960.0g(3)及びスターラーピース(4)を入れ、マグネチックスターラー(5)により十分に攪拌し、上記(A)成分、(B)成分及び(C)成分の配合割合[(A+C)/(A+B+C)]が、1/50となる洗浄剤組成物を調製した。続いて、マグネチックスターラーの回転速度を800rpmに調節し、溶液中に上記試験用ウエハ(A)(6)を入れ、ステンレスクリップ(7)及びステンレス棒(8)により固定しながら、室温下で10分間洗浄を行なった。その後、溶液から試験用ウエハ(A)を取り出し、温度80℃に設定した循風乾燥機の中で10分間乾燥させた。また、上記試験用ウエハ(B)、(C)及び(A’)〜(C’)についても同様の手順で洗浄と乾燥を行なった。[Evaluation method of particle removability]
Example 1
As shown in FIG. 1, 40.0 g (2) of the cleaning agent stock solution of Preparation Example 1, 960.0 g (3) of ion-exchanged water and a stirrer piece in a beaker (1) (capacity 1000 mL, trunk diameter φ110 mm, height 150 mm) (4) is added and sufficiently stirred with a magnetic stirrer (5), and the blending ratio [(A + C) / (A + B + C)] of the components (A), (B) and (C) is 1/50. A cleaning composition was prepared. Subsequently, the rotational speed of the magnetic stirrer was adjusted to 800 rpm, the test wafer (A) (6) was put in the solution, and fixed with the stainless steel clip (7) and the stainless steel rod (8) at room temperature. Washing was performed for 10 minutes. Thereafter, the test wafer (A) was taken out from the solution and dried for 10 minutes in a circulating drier set at a temperature of 80 ° C. The test wafers (B), (C) and (A ′) to (C ′) were also washed and dried in the same procedure.
次に、光学顕微鏡(1000倍率)を使用し、洗浄と乾燥を終えた試験用ウエハ(A)の汚染箇所をランダムに5箇所観察し、残存するパーティクルの総数を求めた。一方で、これと同様の方法により、上記汚染液(A)で汚染された直後のウエハ表面に付着するパーティクルの総数も求めておき、次式によりパーティクル除去率を算出した。この評価を実施例1つにつき5回行ない、パーティクル除去率の平均値を求め、以下の評価基準に基づきパーティクル除去性を評価した。表4に結果を示す(以下同様)。 Next, using an optical microscope (1000 magnifications), five contaminated spots on the test wafer (A) that had been cleaned and dried were randomly observed to determine the total number of remaining particles. On the other hand, by the same method as this, the total number of particles adhering to the wafer surface immediately after being contaminated with the contamination liquid (A) was also obtained, and the particle removal rate was calculated by the following equation. This evaluation was performed five times for each example, the average value of the particle removal rate was determined, and the particle removability was evaluated based on the following evaluation criteria. Table 4 shows the results (the same applies hereinafter).
パーティクル除去率(%)=(汚染直後のパーティクル総数−洗浄後に残存するパーティクル総数)/汚染直後のパーティクル総数×100 Particle removal rate (%) = (total number of particles immediately after contamination−total number of particles remaining after cleaning) / total number of particles immediately after contamination × 100
[パーティクル除去性の評価基準]
◎:パーティクル除去率が90%以上
○:パーティクル除去率が70%以上90%未満
△:パーティクル除去率が50%以上70%未満
×:パーティクル除去率が50%未満[Evaluation criteria for particle removability]
A: Particle removal rate is 90% or more B: Particle removal rate is 70% or more and less than 90% Δ: Particle removal rate is 50% or more and less than 70% ×: Particle removal rate is less than 50%
また、洗浄と乾燥を終えた試験用ウエハ(B)、(C)及び(A’)〜(C’)についても同様の手順でパーティクル除去性を評価した。 The test wafers (B), (C), and (A ′) to (C ′) that had been cleaned and dried were evaluated for particle removability in the same procedure.
実施例2
図1に示すように、ビーカー(1)(容量1000mL、胴径φ110mm、高さ150mm)に調製例1の洗浄剤原液20.0g(2)、イオン交換水980.0g(3)及びスターラーピース(4)を入れ、マグネチックスターラー(5)により十分に攪拌し、上記(A)成分、(B)成分及び(C)成分の配合割合[(A+C)/(A+B+C)]が、1/100となる洗浄剤組成物を調製した。続いて、マグネチックスターラーの回転速度を800rpmに調節し、溶液中に上記試験用ウエハ(A)(6)を入れ、ステンレスクリップ(7)及びステンレス棒(8)により固定しながら、室温下で10分間洗浄を行なった。その後、溶液から試験用ウエハ(A)を取り出し、温度80℃に設定した循風乾燥機の中で10分間乾燥させた。また、上記試験用ウエハ(B)、(C)及び(A’)〜(C’)についても同様の手順で洗浄と乾燥を行なった。Example 2
As shown in FIG. 1, 20.0 g (2) of the detergent stock solution of Preparation Example 1, 980.0 g (3) of ion-exchanged water and a stirrer piece in a beaker (1) (capacity 1000 mL, trunk diameter φ110 mm, height 150 mm) (4) is added and sufficiently stirred with a magnetic stirrer (5), and the blending ratio [(A + C) / (A + B + C)] of the components (A), (B) and (C) is 1/100. A cleaning composition was prepared. Subsequently, the rotational speed of the magnetic stirrer was adjusted to 800 rpm, the test wafer (A) (6) was put in the solution, and fixed with the stainless steel clip (7) and the stainless steel rod (8) at room temperature. Washing was performed for 10 minutes. Thereafter, the test wafer (A) was taken out from the solution and dried for 10 minutes in a circulating drier set at a temperature of 80 ° C. The test wafers (B), (C) and (A ′) to (C ′) were also washed and dried in the same procedure.
洗浄と乾燥を終えた試験用ウエハ(A)〜(C)及び(A’)〜(C’)について、実施例1と同等の評価基準に基づきパーティクル除去性を評価した。 The test wafers (A) to (C) and (A ′) to (C ′) that had been cleaned and dried were evaluated for particle removability based on the same evaluation criteria as in Example 1.
実施例3
図1に示すように、ビーカー(1)(容量1000mL、胴径φ110mm、高さ150mm)に調製例1の洗浄剤原液1.0g(2)、イオン交換水999.0g(3)及びスターラーピース(4)を入れ、マグネチックスターラー(5)により十分に攪拌し、上記(A)成分、(B)成分及び(C)成分の配合割合[(A+C)/(A+B+C)]が、1/2000となる洗浄剤組成物を調製した。続いて、マグネチックスターラーの回転速度を800rpmに調節し、溶液中に上記試験用ウエハ(A)(6)を入れ、ステンレスクリップ(7)及びステンレス棒(8)により固定しながら、室温下で10分間洗浄を行なった。その後、溶液から試験用ウエハ(A)を取り出し、温度80℃に設定した循風乾燥機の中で10分間乾燥させた。また、上記試験用ウエハ(B)、(C)及び(A’)〜(C’)についても同様の手順で洗浄と乾燥を行なった。Example 3
As shown in FIG. 1, in a beaker (1) (capacity 1000 mL, trunk diameter φ110 mm, height 150 mm), 1.0 g (2) of the stock detergent solution of Preparation Example 1, 999.0 g (3) of ion-exchanged water, and a stirrer piece (4) was added, and the mixture was sufficiently stirred with a magnetic stirrer (5), and the blending ratio [(A + C) / (A + B + C)] of the above components (A), (B) and (C) was 1/2000. A cleaning composition was prepared. Subsequently, the rotational speed of the magnetic stirrer was adjusted to 800 rpm, the test wafer (A) (6) was put in the solution, and fixed with the stainless steel clip (7) and the stainless steel rod (8) at room temperature. Washing was performed for 10 minutes. Thereafter, the test wafer (A) was taken out from the solution and dried for 10 minutes in a circulating drier set at a temperature of 80 ° C. The test wafers (B), (C) and (A ′) to (C ′) were also washed and dried in the same procedure.
洗浄と乾燥を終えた試験用ウエハ(A)〜(C)及び(A’)〜(C’)について、実施例1と同等の評価基準に基づきパーティクル除去性を評価した。 The test wafers (A) to (C) and (A ′) to (C ′) that had been cleaned and dried were evaluated for particle removability based on the same evaluation criteria as in Example 1.
実施例4
図1に示すように、ビーカー(1)(容量1000mL、胴径φ110mm、高さ150mm)に調製例1の洗浄剤原液0.2g(2)、イオン交換水999.8g(3)及びスターラーピース(4)を入れ、マグネチックスターラー(5)により十分に攪拌し、上記(A)成分、(B)成分及び(C)成分の配合割合[(A+C)/(A+B+C)]が、1/10000となる洗浄剤組成物を調製した。続いて、マグネチックスターラーの回転速度を800rpmに調節し、溶液中に上記試験用ウエハ(A)(6)を入れ、ステンレスクリップ(7)及びステンレス棒(8)により固定しながら、室温下で10分間洗浄を行なった。その後、溶液から試験用ウエハ(A)を取り出し、温度80℃に設定した循風乾燥機の中で10分間乾燥させた。また、上記試験用ウエハ(B)、(C)及び(A’)〜(C’)についても同様の手順で洗浄と乾燥を行なった。Example 4
As shown in FIG. 1, 0.2 g (2) of the detergent stock solution of Preparation Example 1, 999.8 g (3) of ion-exchanged water, and a stirrer piece in a beaker (1) (capacity 1000 mL, trunk diameter φ110 mm, height 150 mm) (4) is added and sufficiently stirred with a magnetic stirrer (5), and the blending ratio [(A + C) / (A + B + C)] of the components (A), (B) and (C) is 1/10000. A cleaning composition was prepared. Subsequently, the rotational speed of the magnetic stirrer was adjusted to 800 rpm, the test wafer (A) (6) was put in the solution, and fixed with the stainless steel clip (7) and the stainless steel rod (8) at room temperature. Washing was performed for 10 minutes. Thereafter, the test wafer (A) was taken out from the solution and dried for 10 minutes in a circulating drier set at a temperature of 80 ° C. The test wafers (B), (C) and (A ′) to (C ′) were also washed and dried in the same procedure.
洗浄と乾燥を終えた試験用ウエハ(A)〜(C)及び(A’)〜(C’)について、実施例1と同等の評価基準に基づきパーティクル除去性を評価した。 The test wafers (A) to (C) and (A ′) to (C ′) that had been cleaned and dried were evaluated for particle removability based on the same evaluation criteria as in Example 1.
実施例5〜18、比較例1〜8
実施例1と同様の方法で、表4に示すように、各々の洗浄剤原液を配合割合[(A+C)/(A+B+C)]が1/2000あるいは1/10000となるように希釈し、それぞれの洗浄剤組成物のパーティクル除去性を評価した。Examples 5-18, Comparative Examples 1-8
In the same manner as in Example 1, as shown in Table 4, each detergent stock solution was diluted so that the blending ratio [(A + C) / (A + B + C)] was 1/2000 or 1/10000, The particle removability of the cleaning composition was evaluated.
比較例9
比較調製例5の洗浄剤原液は、引火点が100℃未満のため、評価しなかった。Comparative Example 9
The detergent stock solution of Comparative Preparation Example 5 was not evaluated because its flash point was less than 100 ° C.
比較例10
図1に示すように、ビーカー(1)(容量1000mL、胴径φ110mm、高さ150mm)にイオン交換水1000g(3)及びスターラーピース(4)を入れ、マグネチックスターラーの回転速度を800rpmに調節した。続いて、溶液中に上記試験用ウエハ(A)(6)を入れ、ステンレスクリップ(7)及びステンレス棒(8)により固定しながら、室温下で10分間洗浄を行なった。その後、溶液から試験用ウエハ(A)を取り出し、温度80℃に設定した循風乾燥機の中で10分間乾燥させた。また、上記試験用ウエハ(A’)〜(C’)についても同様の手順で洗浄と乾燥を行なった。Comparative Example 10
As shown in FIG. 1, 1000 g (3) of ion-exchanged water and a stirrer piece (4) are placed in a beaker (1) (capacity 1000 mL, trunk diameter φ110 mm, height 150 mm), and the rotational speed of the magnetic stirrer is adjusted to 800 rpm. did. Subsequently, the test wafer (A) (6) was placed in the solution and washed for 10 minutes at room temperature while being fixed with the stainless steel clip (7) and the stainless steel rod (8). Thereafter, the test wafer (A) was taken out from the solution and dried for 10 minutes in a circulating drier set at a temperature of 80 ° C. The test wafers (A ′) to (C ′) were also washed and dried in the same procedure.
洗浄と乾燥を終えた試験用ウエハ(A)〜(C)及び(A’)〜(C’)について、実施例1と同等の評価基準に基づきパーティクル除去性を評価した。 The test wafers (A) to (C) and (A ′) to (C ′) that had been cleaned and dried were evaluated for particle removability based on the same evaluation criteria as in Example 1.
4.洗浄剤組成物の乾燥性
[乾燥性の評価方法]
実施例1
スクリュー管(容量100mL)に調製例1の洗浄剤原液4.0g、イオン交換水96.0gを入れ、よく振盪し、上記(A)成分、(B)成分及び(C)成分の配合割合[(A+C)/(A+B+C)]が、1/50となる洗浄剤組成物を調製した。次に、高純度シリコンウエハ(アズワン(株)製、直径φ4inch)の中心にこの洗浄剤組成物を0.05g滴下し、80℃に調節した循風乾燥機の中で20分間静置させた。そして、乾燥後のウエハ表面を目視観察し、以下の評価基準に基づき洗浄剤組成物の乾燥性を評価した。4). Dryability of cleaning composition [Dryability evaluation method]
Example 1
Add 4.0 g of the cleaning agent stock solution of Preparation Example 1 and 96.0 g of ion-exchanged water to a screw tube (capacity 100 mL), shake well, and blend ratio of the above components (A), (B) and (C) [ A cleaning composition in which (A + C) / (A + B + C)] was 1/50 was prepared. Next, 0.05 g of this cleaning composition was dropped at the center of a high-purity silicon wafer (manufactured by AS ONE, diameter φ4 inch) and allowed to stand for 20 minutes in a circulating drier adjusted to 80 ° C. . And the wafer surface after drying was visually observed, and the drying property of the cleaning composition was evaluated based on the following evaluation criteria.
[乾燥性の評価基準]
○:洗浄剤組成物の残渣無し
×:洗浄剤組成物の残渣有り[Evaluation criteria for drying properties]
○: No residue of detergent composition ×: There is residue of detergent composition
実施例2
スクリュー管(容量100mL)に調製例1の洗浄剤原液2.0g、イオン交換水98.0gを入れ、よく振盪し、上記(A)成分、(B)成分及び(C)成分の配合割合[(A+C)/(A+B+C)]が、1/100となる洗浄剤組成物を調製した。以下、実施例1と同様の手順により、洗浄剤組成物の乾燥性を評価した。Example 2
Add 2.0 g of the detergent stock solution of Preparation Example 1 and 98.0 g of ion-exchanged water to a screw tube (capacity: 100 mL), shake well, and blend ratio of the above components (A), (B) and (C) [ A cleaning composition in which (A + C) / (A + B + C)] was 1/100 was prepared. Hereafter, the drying property of the cleaning composition was evaluated by the same procedure as in Example 1.
実施例3
スクリュー管(容量100mL)に調製例1の洗浄剤原液0.1g、イオン交換水99.9gを入れ、よく振盪し、上記(A)成分、(B)成分及び(C)成分の配合割合[(A+C)/(A+B+C)]が、1/2000となる洗浄剤組成物を調製した。以下、実施例1と同様の手順により、洗浄剤組成物の乾燥性を評価した。Example 3
Add 0.1 g of the detergent stock solution of Preparation Example 1 and 99.9 g of ion-exchanged water to a screw tube (capacity: 100 mL), shake well, and blend ratio of the above components (A), (B) and (C) [ A cleaning composition having (A + C) / (A + B + C)] of 1/2000 was prepared. Hereafter, the drying property of the cleaning composition was evaluated by the same procedure as in Example 1.
実施例4
スクリュー管(容量100mL)に調製例1の洗浄剤原液0.02g、イオン交換水99.98gを入れ、よく振盪し、上記(A)成分、(B)成分及び(C)成分の配合割合[(A+C)/(A+B+C)]が、1/10000となる洗浄剤組成物を調製した。以下、実施例1と同様の手順により、洗浄剤組成物の乾燥性を評価した。Example 4
Put 0.02 g of the detergent stock solution of Preparation Example 1 and 99.98 g of ion-exchanged water in a screw tube (capacity 100 mL), shake well, and blend ratio of the above components (A), (B) and (C) [ A cleaning composition in which (A + C) / (A + B + C)] was 1/10000 was prepared. Hereafter, the drying property of the cleaning composition was evaluated by the same procedure as in Example 1.
実施例5〜18、比較例1〜8
実施例1と同様の方法で、表4に示すように、各々の洗浄剤原液を配合割合[(A+C)/(A+B+C)]が1/2000あるいは1/10000となるように希釈し、それぞれの洗浄剤組成物の乾燥性を評価した。Examples 5-18, Comparative Examples 1-8
In the same manner as in Example 1, as shown in Table 4, each detergent stock solution was diluted so that the blending ratio [(A + C) / (A + B + C)] was 1/2000 or 1/10000, The drying property of the cleaning composition was evaluated.
比較例10
イオン交換水を使用し、実施例1と同様の手順により、乾燥性を評価した。Comparative Example 10
Dryness was evaluated by the same procedure as in Example 1 using ion-exchanged water.
1 ビーカー
2 洗浄剤原液
3 イオン交換水
4 スターラーピース
5 マグネチックスターラー
6 試験用ウエハ
7 ステンレスクリップ
8 ステンレス棒DESCRIPTION OF
【0024】
洗浄剤組成物の乾燥性を評価した。
[0098]
実施例5〜18、比較例1〜8
実施例1と同様の方法で、表4に示すように、各々の洗浄剤原液を配合割合[(A+C)/(A+B+C)]が1/2000あるいは1/10000となるように希釈し、それぞれの洗浄剤組成物の乾燥性を評価した。
[0099]
比較例10
イオン交換水を使用し、実施例1と同様の手順により、乾燥性を評価した。
[0100]
[表4]
[符号の説明]
[0101]
1 ビーカー[0024]
The drying property of the cleaning composition was evaluated.
[0098]
Examples 5-18, Comparative Examples 1-8
In the same manner as in Example 1, as shown in Table 4, each detergent stock solution was diluted so that the blending ratio [(A + C) / (A + B + C)] was 1/2000 or 1/10000, The drying property of the cleaning composition was evaluated.
[0099]
Comparative Example 10
Dryness was evaluated by the same procedure as in Example 1 using ion-exchanged water.
[0100]
[Table 4]
[Explanation of symbols]
[0101]
1 Beaker
Claims (9)
前記3級アミン(A)の沸点が、1気圧下で130〜250℃であり、
前記洗浄剤組成物における前記3級アミン(A)と前記水(B)の合計中の3級アミン(A)の重量割合(%)が、3級アミン(A)及び水(B)からなる共沸混合物中の3級アミン(A)の重量割合以下であることを特徴とする電子材料用の洗浄剤組成物。A detergent composition comprising a tertiary amine (A) and water (B) exhibiting azeotropic properties with water,
The boiling point of the tertiary amine (A) is 130 to 250 ° C. under 1 atm,
The weight ratio (%) of the tertiary amine (A) in the total of the tertiary amine (A) and the water (B) in the cleaning composition is composed of the tertiary amine (A) and water (B). A cleaning composition for electronic materials, wherein the composition is not more than the weight ratio of the tertiary amine (A) in the azeotropic mixture.
R1−O−[CH2−CH(X)−O]n−H
(式(1)中、R1は炭素数1〜4のアルキル基を示し、nは1〜3を示し、Xは水素又はメチル基を示す。)で表されるグリコール系溶剤(C)を含み、
前記グリコール系溶剤(C)の沸点が、1気圧下で120〜275℃であり、
前記洗浄剤組成物における前記グリコール系溶剤(C)と前記水(B)の合計中のグリコール系溶剤(C)の重量割合(%)が、グリコール系溶剤(C)及び水(B)からなる共沸混合物中のグリコール系溶剤(C)の重量割合以下であることを特徴とする請求項1記載の電子材料用の洗浄剤組成物。Furthermore, general formula (1) showing azeotropic properties with water:
R 1 —O— [CH 2 —CH (X) —O] n —H
(In Formula (1), R 1 represents an alkyl group having 1 to 4 carbon atoms, n represents 1 to 3, and X represents hydrogen or a methyl group.) A glycol solvent (C) represented by Including
The glycol solvent (C) has a boiling point of 120 to 275 ° C. under 1 atm,
The weight ratio (%) of the glycol solvent (C) in the total of the glycol solvent (C) and the water (B) in the cleaning composition is composed of the glycol solvent (C) and water (B). The cleaning composition for an electronic material according to claim 1, wherein the composition is not more than the weight ratio of the glycol solvent (C) in the azeotropic mixture.
(R2)R3N−CH2−CH(Y)−OH
(式(2)中、R2及びR3はそれぞれ同一または異なる炭素数1〜3のアルキル基を示し、Yは水素又はメチル基を示す。)で表されるモノアミン(A1)、及び
一般式(3):
(R4)R5N−C2H4−Z−C2H4−NR6(R7)
(式(3)中、R4、R5、R6及びR7はそれぞれ同一または異なる炭素数1〜3のアルキル基を示し、Zは−CH2−、−(CH2)2−、−O−、−NH−、または−N(CH3)−を示す。)で表されるポリアミン(A2)のいずれか1つ以上であることを特徴とする請求項1又は2記載の電子材料用の洗浄剤組成物。The tertiary amine (A) is represented by the general formula (2):
(R 2) R 3 N- CH 2 -CH (Y) -OH
(In formula (2), R 2 and R 3 each represent the same or different alkyl group having 1 to 3 carbon atoms, and Y represents hydrogen or a methyl group), and a general formula (3):
(R 4) R 5 N- C 2 H 4 -Z-C 2 H 4 -NR 6 (R 7)
(In the formula (3), R 4 , R 5 , R 6 and R 7 are the same or different alkyl groups having 1 to 3 carbon atoms, and Z is —CH 2 —, — (CH 2 ) 2 —, — It is any one or more of polyamines (A2) represented by O-, -NH-, or -N (CH 3 )-). Cleaning composition.
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