CN108767054A - 一种光敏三极管加工工艺 - Google Patents
一种光敏三极管加工工艺 Download PDFInfo
- Publication number
- CN108767054A CN108767054A CN201810298755.2A CN201810298755A CN108767054A CN 108767054 A CN108767054 A CN 108767054A CN 201810298755 A CN201810298755 A CN 201810298755A CN 108767054 A CN108767054 A CN 108767054A
- Authority
- CN
- China
- Prior art keywords
- emitter region
- photoetching
- injection
- crystal orientation
- doping
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005516 engineering process Methods 0.000 title claims abstract description 19
- 238000002347 injection Methods 0.000 claims abstract description 18
- 239000007924 injection Substances 0.000 claims abstract description 18
- 238000001259 photo etching Methods 0.000 claims abstract description 16
- 239000013078 crystal Substances 0.000 claims abstract description 15
- 230000003321 amplification Effects 0.000 claims abstract description 10
- 238000005530 etching Methods 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 10
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 230000003647 oxidation Effects 0.000 claims abstract description 8
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 8
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 8
- 239000010703 silicon Substances 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims abstract description 7
- 238000009792 diffusion process Methods 0.000 claims abstract description 4
- 238000001465 metallisation Methods 0.000 claims abstract description 4
- 238000007711 solidification Methods 0.000 claims abstract description 4
- 230000008023 solidification Effects 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims abstract description 4
- 206010034960 Photophobia Diseases 0.000 claims description 4
- 208000013469 light sensitivity Diseases 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 230000003628 erosive effect Effects 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000009286 beneficial effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors
- H01L31/1105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors the device being a bipolar phototransistor
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Light Receiving Elements (AREA)
Abstract
本发明公开了一种光敏三极管加工工艺，依次包括如下步骤：产品导入、场氧化、基区光刻、基区刻蚀、基区掺杂、发射区光刻、发射区刻蚀、氧化、注入掺杂、氧化层淀积、发射区推进、发射区掺杂、孔光刻、孔刻蚀、金属淀积、光刻、金属刻蚀、固化、背面研磨、背面金属；其特征在于：所述工艺通过调整外延片的晶向，采用P型100晶向外延片或者衬底片作为抛光片，提高光的敏感度；同时发射区推进过程中采用小剂量注入+扩散的工艺，来保证放大倍数的可控性又保证了发射区接触电阻。
Description
技术领域
本发明涉及一种光敏三极管加工工艺。
背景技术
传统光敏三极管加工工艺中采用P型111晶向的抛光片或者三扩片进行生产；发射区通常采用的是大剂量的注入，加工条件较为苛刻；且后续需要增加SIN层次来保证光的敏感度。
发明内容
本发明所要解决的技术问题是提供了一种光敏三极管加工工艺，本发明制作工艺难度得到降低，同时生产成本降低。
为了达到上述目的，本发明的技术方案是：
一种光敏三极管加工工艺，依次包括如下步骤：产品导入、场氧化、基区光刻、基区刻蚀、基区掺杂、发射区光刻、发射区刻蚀、氧化、注入掺杂、氧化层淀积、发射区推进、发射区掺杂、孔光刻、孔刻蚀、金属淀积、光刻、金属刻蚀、固化、背面研磨、背面金属；其特征在于：所述工艺通过调整外延片的晶向，采用P型100晶向外延片或者衬底片作为抛光片，相对传统工艺采用的为P型111晶向，相同的放大倍数100晶向抛光片加工的制品的光敏感度要强；同时发射区推进过程中采用小剂量注入+扩散的工艺，来保证放大倍数的可控性又保证了发射区接触电阻，具体工艺为，先通过注入工艺注入1E16cm-2剂量的磷杂质，形成发射区，这样因为注入工艺的均匀性要好，能够保证放大倍数的均匀性，然后在通过发射区扩散的方式对发射区区域进行加浓来保证发射区的接触电阻。
本发明的有益效果为：本发明生产的光敏三极管的制作工艺难度得到降低，同时生产成本降低。
具体实施方式
本实施例的一种光敏三极管加工工艺，依次包括如下步骤：产品导入、场氧化、基区光刻、基区刻蚀、基区掺杂、发射区光刻、发射区刻蚀、氧化、注入掺杂、氧化层淀积、发射区推进、发射区掺杂、孔光刻、孔刻蚀、金属淀积、光刻、金属刻蚀、固化、背面研磨、背面金属；：所述工艺通过调整外延片的晶向，采用P型100晶向外延片或者衬底片作为抛光片，相对传统工艺采用的为P型111晶向，相同的放大倍数100晶向抛光片加工的制品的光敏感度要强；同时发射区推进过程中采用小剂量注入+扩散的工艺，来保证放大倍数的可控性又保证了发射区接触电阻，具体工艺为，先通过注入工艺注入1E16cm-2剂量的磷杂质，形成发射区，这样因为注入工艺的均匀性要好，能够保证放大倍数的均匀性，然后在通过发射区扩散的方式对发射区区域进行加浓来保证发射区的接触电阻。
本实施例生产的光敏三极管的制作工艺难度得到降低，同时生产成本降低。
Claims (1)
1.一种光敏三极管加工工艺，依次包括如下步骤：产品导入、场氧化、基区光刻、基区刻蚀、基区掺杂、发射区光刻、发射区刻蚀、氧化、注入掺杂、氧化层淀积、发射区推进、发射区掺杂、孔光刻、孔刻蚀、金属淀积、光刻、金属刻蚀、固化、背面研磨、背面金属；其特征在于：所述工艺通过调整外延片的晶向，采用P型100晶向外延片或者衬底片作为抛光片，相对传统工艺采用的为P型111晶向，相同的放大倍数100晶向抛光片加工的制品的光敏感度要强；同时发射区推进过程中采用小剂量注入+扩散的工艺，来保证放大倍数的可控性又保证了发射区接触电阻，具体工艺为，先通过注入工艺注入1E16cm-2剂量的磷杂质，形成发射区，这样因为注入工艺的均匀性要好，能够保证放大倍数的均匀性，然后在通过发射区扩散的方式对发射区区域进行加浓来保证发射区的接触电阻。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810298755.2A CN108767054A (zh) | 2018-04-04 | 2018-04-04 | 一种光敏三极管加工工艺 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810298755.2A CN108767054A (zh) | 2018-04-04 | 2018-04-04 | 一种光敏三极管加工工艺 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108767054A true CN108767054A (zh) | 2018-11-06 |
Family
ID=63981353
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810298755.2A Pending CN108767054A (zh) | 2018-04-04 | 2018-04-04 | 一种光敏三极管加工工艺 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108767054A (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI844791B (zh) * | 2020-08-02 | 2024-06-11 | 昇佳電子股份有限公司 | 光感測器結構及其製造方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6703647B1 (en) * | 2002-04-22 | 2004-03-09 | The United States Of America As Represented By The Secretary Of The Navy | Triple base bipolar phototransistor |
| CN203589039U (zh) * | 2013-10-16 | 2014-05-07 | 无锡市晶源微电子有限公司 | 一种多晶硅发射极BiCMOS工艺中减小发射极电阻的NPN管结构 |
| CN106252456A (zh) * | 2016-09-30 | 2016-12-21 | 安徽富芯微电子有限公司 | 一种高灵敏度光敏三极管及其制造方法 |
| CN106549080A (zh) * | 2017-01-25 | 2017-03-29 | 厦门大学 | 标准硅工艺下的高响应度光电三极管 |
| WO2017112821A1 (en) * | 2015-12-22 | 2017-06-29 | Texas Instruments Incorporated | Tilted photodetector cell |
-
2018
- 2018-04-04 CN CN201810298755.2A patent/CN108767054A/zh active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6703647B1 (en) * | 2002-04-22 | 2004-03-09 | The United States Of America As Represented By The Secretary Of The Navy | Triple base bipolar phototransistor |
| CN203589039U (zh) * | 2013-10-16 | 2014-05-07 | 无锡市晶源微电子有限公司 | 一种多晶硅发射极BiCMOS工艺中减小发射极电阻的NPN管结构 |
| WO2017112821A1 (en) * | 2015-12-22 | 2017-06-29 | Texas Instruments Incorporated | Tilted photodetector cell |
| CN106252456A (zh) * | 2016-09-30 | 2016-12-21 | 安徽富芯微电子有限公司 | 一种高灵敏度光敏三极管及其制造方法 |
| CN106549080A (zh) * | 2017-01-25 | 2017-03-29 | 厦门大学 | 标准硅工艺下的高响应度光电三极管 |
Non-Patent Citations (1)
| Title |
|---|
| 牛德芳: "《半导体传感器原理及其应用》", 28 February 1993, 大连理工大学出版社 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI844791B (zh) * | 2020-08-02 | 2024-06-11 | 昇佳電子股份有限公司 | 光感測器結構及其製造方法 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| NL258408A (zh) | ||
| CN108767054A (zh) | 一种光敏三极管加工工艺 | |
| CN103035746B (zh) | 一种恒流二极管及其制造方法 | |
| EP4250338A3 (en) | Solar cell preparation method | |
| CN108074809A (zh) | 一种快速软恢复二极管芯片的制造方法 | |
| CN103050545A (zh) | Tvs二极管及其制作方法 | |
| GB1096484A (en) | Improvements in or relating to semiconductor circuits | |
| CN104425247B (zh) | 一种绝缘栅双极型晶体管的制备方法 | |
| CN104282549B (zh) | 一种背面结构的保护方法 | |
| CN103730487B (zh) | 一种提高正向耐压的可控硅台面结构及其制造工艺 | |
| TW201110372A (en) | A printing method for making barrier in buried-contact solar cell fabrication and its resultant device | |
| CN106847909A (zh) | 一种fs型igbt器件的制造方法 | |
| CN105990134A (zh) | 一种制作二极管的方法 | |
| CN109559990A (zh) | 一种快恢复二极管及其制作方法 | |
| CN213692059U (zh) | 一种单向浪涌增强型半导体放电管芯片 | |
| CN104810363A (zh) | 功率集成器件及其制作方法 | |
| CN100578756C (zh) | 采用磷埋技术的薄外延的集成注入逻辑的制作工艺 | |
| CN107887277A (zh) | 一种制作sigma型锗硅的沟槽及器件的方法 | |
| CN106128956B (zh) | 绝缘栅场效应管(igbt)的制备方法 | |
| CN104425246A (zh) | 绝缘栅双极型晶体管及其制备方法 | |
| CN210110785U (zh) | 一种肖特基器件结构 | |
| CN206558507U (zh) | 一种瞬态电压抑制器（tvs）芯片结构 | |
| CN106206898B (zh) | 一种发光二极管的制作方法 | |
| CN102842505B (zh) | 一种场效应管及场效应管制造方法 | |
| CN105514149B (zh) | 一种沟槽型frd芯片及制备方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20181106 |