CN108752001A - 一种自抗菌抗静电高安全性瓷抛砖及其制造方法 - Google Patents
一种自抗菌抗静电高安全性瓷抛砖及其制造方法 Download PDFInfo
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Abstract
本发明公开了一种自抗菌抗静电高安全性瓷抛砖及其制造方法,该瓷抛砖物理结构整体由两个部分组成,一部分是碳化硅微粉、氧化钇微粉构筑的多孔大粒碳化硅陶瓷基体,另一部分是内部均匀混有纳米白云母粉、二氧化硅、竹炭粉末、氧化钛粉末的钠米氧化铝基溶胶填料暨交联单体;两个部分在引发剂柠檬酸铵、交联剂N,N‑亚甲基双丙烯酰胺的综合作用下一次性氧化并物理加压烧结而成;该瓷抛砖上表面印有装饰性花纹;瓷抛砖上下表面在距表面0.3mm‑0.5mm的浅表层均具有立体方向的压应力微结构。本发明集合了抗静电瓷砖的功能和瓷抛砖的物理及生化特性、构型立体、自抗菌、抗静电、抗产生静电、绿色环保无公害、安全性高。
Description
技术领域
本发明涉及瓷砖材料技术领域,尤其涉及一种自抗菌抗静电高安全性瓷抛砖及其制造方法。
背景技术
防静电瓷砖是一种新型防静电材料,克服当前使用的,如环氧和三聚氰氨、PVC防静电涂料、地板、防静电橡胶板等高分子材料易老化、不耐磨、易污染、耐久性和防火欠佳的问题。克服以上防静电材料缺点,兼容了陶瓷墙地瓷砖优点,具有美观耐用、防火、防滑、抗压、耐磨、耐腐蚀、防污、防水防渗透、放辐射性低、环保卫生易于施工,是一种永久性防静电,具有高档艺术装饰效果的一种功能性瓷砖。但现有技术中的防静电瓷砖多为釉抛砖或抛晶砖。
瓷抛砖本身为新兴技术,与表面为玻璃质材料(如釉抛砖、抛晶砖等)的陶瓷墙地砖相比,具有反腐,防水,耐磨,寿命长,纹理突出花型多,类型多质感柔和细腻,应用范围广,石材经过抛光处理,让表面变得更加光亮洁净,铺贴后让空间看起来更加明亮,有光泽等优点,适合各类建筑物的内外墙地装饰。
现有专利技术中还没有专业的瓷抛砖及其制造工艺,但目前市售的瓷抛砖在生产和使用过程中均有其局限性,集中体现在:压制层状平面构型不耐磨、热胀冷缩容易产生龟裂、密度疏松污水容易渗到表面、易产生静电。
因此市场上急需一种集合了抗静电瓷砖的功能和瓷抛砖的物理及生化特性、构型立体、自抗菌、抗静电、抗产生静电、绿色环保无公害、安全性高的瓷抛砖。
发明内容
为解决现有技术中存在的上述缺陷,本发明旨在提供一种集合了抗静电瓷砖的功能和瓷抛砖的物理及生化特性、构型立体、自抗菌、抗静电、抗产生静电、绿色环保无公害、安全性高的瓷抛砖。
为了实现上述发明目的,本发明采用以下技术方案:一种自抗菌抗静电高安全性瓷抛砖的制造方法,包括以下步骤:
1)原材料准备
①基体原材料准备:按重量份准备粒径3mm-5mm的碳化硅微粉85份-100份、粒径0.3mm-0.5mm的氧化钇微粉3份-5份、柠檬酸铵0.5份-0.8份;
②填料原材料的准备:按重量份准备六水氯化铝50份-60份、纳米白云母粉1份-2份、二氧化硅2份-3份、竹炭粉末3份-5份、氧化钛粉末2份-3份;
③辅材准备:准备足量无水乙醇、足量溶质质量分数20%的氨水、足量溶质质量分数10%的稀盐酸、足量溶质质量分数3%-5%的聚乙烯醇水溶液、N,N-亚甲基双丙烯酰胺1.5份-1.8份;
2)氧化铝溶胶的制备
①将六水氯化铝与适量纯净水混合,搅拌并过滤杂质,调配至获得溶质质量百分比52%-55%的氯化铝溶液;
②将步骤①获得的盛有氯化铝溶液的容器采用超声发生设备采用500kHz-600kHz的频率进行高频振动,再将氨水雾化后以氯化铝溶液质量计0.5%/min-0.6%/min的速率均匀缓慢地通入步骤①制备的氯化铝溶液中,持续15min-18min,获得源溶液;
③步骤②完成后继续高频振动30min-40min,然后将步骤②获得的源溶液置于25℃-30℃的恒温环境下,并机械搅拌30min-40min,获得预制溶液;
④在步骤③获得的预制溶液内缓慢滴加稀盐酸溶液并搅拌,至溶液的PH值4.8-5.2,在溶液中混入阶段1)步骤②准备的纳米白云母粉、二氧化硅、竹炭粉末、氧化钛粉末并搅拌均匀,获得原始混合溶胶液;
⑤将步骤④获得的原始混合溶胶液置于70℃-80℃温度下,回流8h,获得预制混合溶胶液;
⑥在步骤⑤获得的预制混合溶胶液内缓慢添加聚乙烯醇水溶液,自固化物不再生成,将固化物洗净烘干后即获得所需氧化铝混合溶胶;
3)瓷抛砖制造
①以阶段1)步骤①准备的碳化硅微粉为基体原料、氧化钇微粉为烧结助剂、柠檬酸铵为引发剂、阶段2)步骤⑥获得的氧化铝混合溶胶为交联单体、阶段1)步骤③准备的N,N-亚甲基双丙烯酰胺为交联剂,混合均匀后按设计尺寸压制成坯,获得预制瓷抛砖粗坯;
②对步骤①获得的瓷抛砖粗坯进行烧结,烧结环境为温度1280℃-1330℃、机械压力5MPa-6MPa;工艺过程控制为温度T不大于600℃时以15℃/min-30℃/min的速率升温,温度600℃<T<1050℃时以8℃/min-10℃/min的速率升温,1050℃≤T时以3℃/min-5℃/min的速率升温,到温后保持3h-3.5h,取出后自然冷却后获得所需瓷抛砖。
采用上述方法制造的自抗菌抗静电高安全性瓷抛砖,该瓷抛砖物理结构整体由两个部分组成,一部分是按重量份计碳化硅微粉85份-100份、粒径0.3mm-0.5mm的氧化钇微粉3份-5份构筑的多孔大粒碳化硅陶瓷基体,另一部分是内部均匀混有纳米白云母粉1-2份、二氧化硅2-3份、竹炭粉末3份-5份、氧化钛粉末的钠米氧化铝基溶胶填料暨交联单体;两个部分在引发剂柠檬酸铵0.5份-0.8份、交联剂N,N-亚甲基双丙烯酰胺1.5份-1.8份的综合作用下一次性氧化并物理加压烧结而成;该瓷抛砖上表面印有装饰性花纹;瓷抛砖上下表面在距表面0.3mm-0.5mm的浅表层均具有立体方向的压应力微结构。
与现有技术相比较,由于采用了上述技术方案,本发明具有以下优点:(1)与氮化硅基陶瓷的强韧结合相比,碳化硅陶瓷的脆性更大但硬度及耐磨性更好,当应用于物理应力较为严柯的环境下(如工厂地面、需求高稳定性的实验室地面等),对静电防控具有极高要求的场所时(抗静电瓷砖必然是用在这种特殊场所的),材料本身的耐磨性和稳定性就极为重要了,更重要的是,碳化硅是立方晶体结构,而氮化硅是六方晶体结构,立方晶体结构的材料摩擦时更加不易产生静电。(2)现有瓷抛砖压制层状平面构型不耐磨,这主要是现有瓷抛砖完全借鉴的瓷器烧制原理,以长石、石英、粘土为基材,通过有机树脂交联单体、交联剂、助烧结剂、引发剂、增粘剂等多种辅料共同混合常规烧制,结构自然疏松且由于普遍烧结加热及冷却温度梯度不均(主要是随着空间尺寸的变化而呈现规律性,因此性能差异是以层间距来体现的)带来的层间热应力效应(专业地说存在层间内应力,在较大外力作用下易导致应力激发而滑移),而本发明通过放弃传统的有机交联单体,改为水含量不超过10%的钠米氧化铝溶胶为交联单体(钠米氧化铝溶胶的化学结构式为[Al2(OH)nX6-n]m,在N,N-亚甲基双丙烯酰胺作用下具有可交联性),再通过大颗粒的碳化硅、中颗粒的氧化钇和小颗粒(烧结后自然形成)的氧化铝构成的复合陶瓷材料,形象地描述是以碳化硅为骨架、氧化钇为筋膜、氧化铝为肌肉构成的立体整体,疏孔的大颗粒碳化硅(碳化硅本身就是高强度陶瓷材料)烧结时最先成型、氧化钇对其进行填充和韧化、氧化铝再次填充及增强耐磨性,在烧结时一边是真空环境、一边是物理加压(原理类似热等静压,但压力远低于热等静压的压力,对设备要求也没有那么高)、一边是严格缓速升温,造成本发明在烧结的过程中热应力集中不明显,且在物理压制位移的过程中使应力分布更加复杂,没有了明显的应力集中,使本发明在结构上更加稳定。(3)市售瓷抛砖抗静电能力差主要是由于烧结后表面疏孔多,摩擦力大,且以石英石(二氧化硅)、粘土、长石为原材料的陶瓷本身就易产生并集富静电,本发明采用立方晶系的碳化硅为基体,纳米白云母粉在氧化后产生的高强度和抗静电及消除静电的物理特性,再辅以二氧化钛的半导体物理特性,使本发明具有了既不易产生静电又易清除已产生静电的双重特性,综合起来就是良好的抗静电性能。(4)市售瓷抛砖瓷材吸湿(烧结原料必有粘土)表面沾水变光滑、密度疏松污水容易渗到表面、易成为细菌的滋生场所,本发明根本上去除了粘土的使用,烧制完成后没有易吸水的成份(主要是陶瓷材料和竹炭粉末,均为耐水材料),且在真空下物理加压烧制成的瓷砖致密度远高于市售的常规烧制的瓷抛砖,其表面微孔孔径绝大多数都是小于水珠的张力极限的,因而对液态水具有荷叶效果,不吸湿,也没有可供细菌生长繁殖的基础(粘土内含有细菌生长的结构和物质,而本发明最终获得的结构基本都是无机物),本发明还添加有二氧化钛这种光触媒灭菌材料,在光照充足时也能主动产生灭菌效果,因而本发明的瓷抛砖具有自抗菌性能。(5)市售瓷抛砖热胀冷缩容易产生龟裂,这是由于市售瓷抛砖原料均为单一脆性陶瓷材料且简单烧结,因而脆性大、结构脆弱且内应力大,本发明基础材料即有三种不同强韧比的陶瓷材料,再辅以二氧化硅、竹炭粉末等具有润滑或容错缓冲结构的物质,又是缓升温烧结,其热胀冷缩抗力远高于现有技术。(6)额外的,在现有技术的基础上,本发明由于是物理加压烧结,又有多种柔性材料参与烧结,因而在烧结时除了能极大提升本发明的致密度外,也会在烧结完成的瓷抛砖表面形成由于复杂形变产生的压应力,这对本发明抗冲击能力和抗疲劳能力的提升具有重大意义,另外,本发明也没有使用任何危害环境或危害人体安全的材料。综上所述,本发明具有集合了抗静电瓷砖的功能和瓷抛砖的物理及生化特性、构型立体、自抗菌、抗静电、抗产生静电、绿色环保无公害、安全性高的技术特征。
具体实施方式
实施例1:
一种自抗菌抗静电高安全性瓷抛砖,该瓷抛砖物理结构整体由两个部分组成,一部分是按重量份计碳化硅微粉85Kg、粒径0.3mm-0.5mm的氧化钇微粉5Kg构筑的多孔大粒碳化硅陶瓷基体,另一部分是内部均匀混有纳米白云母粉2Kg、二氧化硅Kg、竹炭粉末5Kg、氧化钛粉末的钠米氧化铝基溶胶填料暨交联单体;两个部分在引发剂柠檬酸铵0.8Kg、交联剂N,N-亚甲基双丙烯酰胺1.8Kg的综合作用下一次性氧化并物理加压烧结而成;该瓷抛砖上表面印有装饰性花纹;瓷抛砖上下表面在距表面0.3mm-0.5mm的浅表层均具有立体方向的压应力微结构。
上述瓷抛砖的制造方法,包括以下步骤:
1)原材料准备
①基体原材料准备:按重量份准备粒径3mm-5mm的碳化硅微粉85Kg、粒径0.3mm-0.5mm的氧化钇微粉5Kg、柠檬酸铵0.8Kg;
②填料原材料的准备:按重量份准备六水氯化铝60Kg、纳米白云母粉2Kg、二氧化硅3Kg、竹炭粉末5Kg、氧化钛粉末3Kg;
③辅材准备:准备足量无水乙醇、足量溶质质量分数20%的氨水、足量溶质质量分数10%的稀盐酸、足量溶质质量分数3%-5%的聚乙烯醇水溶液、N,N-亚甲基双丙烯酰胺1.5Kg-1.8Kg;
2)氧化铝溶胶的制备
①将六水氯化铝与适量纯净水混合,搅拌并过滤杂质,调配至获得溶质质量百分比55%的氯化铝溶液;
②将步骤①获得的盛有氯化铝溶液的容器采用超声发生设备采用600kHz的频率进行高频振动,再将氨水雾化后以氯化铝溶液质量计0.6%/min的速率均匀缓慢地通入步骤①制备的氯化铝溶液中,持续18min,获得源溶液;
③步骤②完成后继续高频振动40min,然后将步骤②获得的源溶液置于30℃的恒温环境下,并机械搅拌40min,获得预制溶液;
④在步骤③获得的预制溶液内缓慢滴加稀盐酸溶液并搅拌,至溶液的PH值4.8-5.2,在溶液中混入阶段1)步骤②准备的纳米白云母粉、二氧化硅、竹炭粉末、氧化钛粉末并搅拌均匀,获得原始混合溶胶液;
⑤将步骤④获得的原始混合溶胶液置于80℃温度下,回流8h,获得预制混合溶胶液;
⑥在步骤⑤获得的预制混合溶胶液内缓慢添加聚乙烯醇水溶液,自固化物不再生成,将固化物洗净烘干后即获得所需氧化铝混合溶胶;
3)瓷抛砖制造
①以阶段1)步骤①准备的碳化硅微粉为基体原料、氧化钇微粉为烧结助剂、柠檬酸铵为引发剂、阶段2)步骤⑥获得的氧化铝混合溶胶为交联单体、阶段1)步骤③准备的N,N-亚甲基双丙烯酰胺为交联剂,混合均匀后按设计尺寸压制成坯,获得预制瓷抛砖粗坯;
②对步骤①获得的瓷抛砖粗坯进行烧结,烧结环境为,温度1310℃-1330℃、机械压力6MPa;工艺过程控制为温度T不大于600℃时以25℃/min-30℃/min的速率升温,温度600℃<T<1050℃时以8℃/min-10℃/min的速率升温,1050℃≤T时以3℃/min-5℃/min的速率升温,到温后保持3.5h,取出后自然冷却后获得所需瓷抛砖。
实施例2
整体与实施例1一致,差异之处在于:
一种自抗菌抗静电高安全性瓷抛砖,该瓷抛砖物理结构整体由两个部分组成,一部分是按重量份计碳化硅微粉100Kg、粒径0.3mm-0.5mm的氧化钇微粉3Kg构筑的多孔大粒碳化硅陶瓷基体,另一部分是内部均匀混有纳米白云母粉1Kg、二氧化硅2Kg、竹炭粉末3Kg、氧化钛粉末的钠米氧化铝基溶胶填料暨交联单体;两个部分在引发剂柠檬酸铵0.5Kg、交联剂N,N-亚甲基双丙烯酰胺1.5Kg的综合作用下一次性氧化并物理加压烧结而成;该瓷抛砖上表面印有装饰性花纹;瓷抛砖上下表面在距表面0.3mm-0.5mm的浅表层均具有立体方向的压应力微结构。
上述瓷抛砖的制造方法,包括以下步骤:
1)原材料准备
①基体原材料准备:按重量份准备粒径3mm-5mm的碳化硅微粉100Kg、粒径0.3mm-0.5mm的氧化钇微粉3Kg、柠檬酸铵0.5Kg;
②填料原材料的准备:按重量份准备六水氯化铝50Kg、纳米白云母粉1Kg、二氧化硅2Kg、竹炭粉末3Kg、氧化钛粉末2Kg;
③辅材准备:准备足量无水乙醇、足量溶质质量分数20%的氨水、足量溶质质量分数10%的稀盐酸、足量溶质质量分数3%-5%的聚乙烯醇水溶液、N,N-亚甲基双丙烯酰胺1.5Kg;
2)氧化铝溶胶的制备
①将六水氯化铝与适量纯净水混合,搅拌并过滤杂质,调配至获得溶质质量百分比52%的氯化铝溶液;
②将步骤①获得的盛有氯化铝溶液的容器采用超声发生设备采用500kHz的频率进行高频振动,再将氨水雾化后以氯化铝溶液质量计0.5%/min的速率均匀缓慢地通入步骤①制备的氯化铝溶液中,持续15min,获得源溶液;
③步骤②完成后继续高频振动30min,然后将步骤②获得的源溶液置于25℃的恒温环境下,并机械搅拌30min,获得预制溶液;
⑤将步骤④获得的原始混合溶胶液置于70℃温度下,回流8h,获得预制混合溶胶液;
3)瓷抛砖制造
②对步骤①获得的瓷抛砖粗坯进行烧结,烧结环境为温度1280℃-1300℃、机械压力5MPa;工艺过程控制为温度T不大于600℃时以15℃/min-20℃/min的速率升温,温度600℃<T<1050℃时以8℃/min-10℃/min的速率升温,1050℃≤T时以3℃/min-5℃/min的速率升温,到温后保持3h,取出后自然冷却后获得所需瓷抛砖。
对所公开的实施例的上述说明,仅为了使本领域专业技术人员能够实现或使用本发明。对这些实施例的多种修改对本领域的专业技术人员来说将是显而易见的,本文中所定义的一般原理可以在不脱离本发明的精神或范围的情况下,在其它实施例中实现。因此,本发明将不会被限制于本文所示的这些实施例,而是要符合与本文所公开的原理和新颖特点相一致的最宽的范围。
Claims (2)
1.一种自抗菌抗静电高安全性瓷抛砖的制造方法,其特征在于包括以下步骤:
1)原材料准备
①基体原材料准备:按重量份准备粒径3mm-5mm的碳化硅微粉85份-100份、粒径0.3mm-0.5mm的氧化钇微粉3份-5份、柠檬酸铵0.5份-0.8份;
②填料原材料的准备:按重量份准备六水氯化铝50份-60份、纳米白云母粉1份-2份、二氧化硅2份-3份、竹炭粉末3份-5份、氧化钛粉末2份-3份;
③辅材准备:准备足量无水乙醇、足量溶质质量分数20%的氨水、足量溶质质量分数10%的稀盐酸、足量溶质质量分数3%-5%的聚乙烯醇水溶液、N,N-亚甲基双丙烯酰胺1.5份-1.8份;
2)氧化铝溶胶的制备
①将六水氯化铝与适量纯净水混合,搅拌并过滤杂质,调配至获得溶质质量百分比52%-55%的氯化铝溶液;
②将步骤①获得的盛有氯化铝溶液的容器采用超声发生设备采用500kHz-600kHz的频率进行高频振动,再将氨水雾化后以氯化铝溶液质量计0.5%/min-0.6%/min的速率均匀缓慢地通入步骤①制备的氯化铝溶液中,持续15min-18min,获得源溶液;
③步骤②完成后继续高频振动30min-40min,然后将步骤②获得的源溶液置于25℃-30℃的恒温环境下,并机械搅拌30min-40min,获得预制溶液;
④在步骤③获得的预制溶液内缓慢滴加稀盐酸溶液并搅拌,至溶液的PH值4.8-5.2,在溶液中混入阶段1)步骤②准备的纳米白云母粉、二氧化硅、竹炭粉末、氧化钛粉末并搅拌均匀,获得原始混合溶胶液;
⑤将步骤④获得的原始混合溶胶液置于70℃-80℃温度下,回流8h,获得预制混合溶胶液;
⑥在步骤⑤获得的预制混合溶胶液内缓慢添加聚乙烯醇水溶液,自固化物不再生成,将固化物洗净烘干后即获得所需氧化铝混合溶胶;
3)瓷抛砖制造
①以阶段1)步骤①准备的碳化硅微粉为基体原料、氧化钇微粉为烧结助剂、柠檬酸铵为引发剂、阶段2)步骤⑥获得的氧化铝混合溶胶为交联单体、阶段1)步骤③准备的N,N-亚甲基双丙烯酰胺为交联剂,混合均匀后按设计尺寸压制成坯,获得预制瓷抛砖粗坯;
②对步骤①获得的瓷抛砖粗坯进行烧结,烧结环境为温度1280℃-1330℃、机械压力5MPa-6MPa;工艺过程控制为温度T不大于600℃时以15℃/min-30℃/min的速率升温,温度600℃<T<1050℃时以8℃/min-10℃/min的速率升温,1050℃≤T时以3℃/min-5℃/min的速率升温,到温后保持3h-3.5h,取出后自然冷却后获得所需瓷抛砖。
2.采用权利要求1所述方法制造的自抗菌抗静电高安全性瓷抛砖,其特征在于:该瓷抛砖物理结构整体由两个部分组成,一部分是按重量份计碳化硅微粉85份-100份、粒径0.3mm-0.5mm的氧化钇微粉3份-5份构筑的多孔大粒碳化硅陶瓷基体,另一部分是内部均匀混有纳米白云母粉1-2份、二氧化硅2-3份、竹炭粉末3份-5份、氧化钛粉末的钠米氧化铝基溶胶填料暨交联单体;两个部分在引发剂柠檬酸铵0.5份-0.8份、交联剂N,N-亚甲基双丙烯酰胺1.5份-1.8份的综合作用下一次性氧化并物理加压烧结而成;该瓷抛砖上表面印有装饰性花纹;瓷抛砖上下表面在距表面0.3mm-0.5mm的浅表层均具有立体方向的压应力微结构。
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