CN108735899A - 用于oled蒸镀的荫罩及其制作方法、oled面板的制作方法 - Google Patents
用于oled蒸镀的荫罩及其制作方法、oled面板的制作方法 Download PDFInfo
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- CN108735899A CN108735899A CN201710244086.6A CN201710244086A CN108735899A CN 108735899 A CN108735899 A CN 108735899A CN 201710244086 A CN201710244086 A CN 201710244086A CN 108735899 A CN108735899 A CN 108735899A
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- 238000007740 vapor deposition Methods 0.000 title claims abstract description 81
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 33
- 238000002360 preparation method Methods 0.000 title abstract description 4
- 239000004065 semiconductor Substances 0.000 claims abstract description 239
- 239000000758 substrate Substances 0.000 claims abstract description 81
- 238000005530 etching Methods 0.000 claims abstract description 53
- 238000004020 luminiscence type Methods 0.000 claims abstract description 23
- 239000010410 layer Substances 0.000 claims description 446
- 239000000463 material Substances 0.000 claims description 61
- 238000000034 method Methods 0.000 claims description 45
- 229920002120 photoresistant polymer Polymers 0.000 claims description 24
- 230000015572 biosynthetic process Effects 0.000 claims description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 19
- 229910052710 silicon Inorganic materials 0.000 claims description 19
- 239000010703 silicon Substances 0.000 claims description 18
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 16
- 238000009792 diffusion process Methods 0.000 claims description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 239000011241 protective layer Substances 0.000 claims description 14
- 238000001704 evaporation Methods 0.000 claims description 12
- 230000008020 evaporation Effects 0.000 claims description 12
- 239000004020 conductor Substances 0.000 claims description 10
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 9
- 230000003746 surface roughness Effects 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 7
- 238000010348 incorporation Methods 0.000 claims description 7
- 229910052732 germanium Inorganic materials 0.000 claims description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 6
- 229910000077 silane Inorganic materials 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 238000002156 mixing Methods 0.000 claims description 4
- 239000007787 solid Substances 0.000 claims description 4
- 229910052582 BN Inorganic materials 0.000 claims description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 3
- 229910007264 Si2H6 Inorganic materials 0.000 claims description 3
- 229910003818 SiH2Cl2 Inorganic materials 0.000 claims description 3
- 240000007594 Oryza sativa Species 0.000 claims description 2
- 235000007164 Oryza sativa Nutrition 0.000 claims description 2
- 235000009566 rice Nutrition 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims 5
- 229910003978 SiClx Inorganic materials 0.000 claims 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 11
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 24
- 229910052751 metal Inorganic materials 0.000 description 19
- 239000002184 metal Substances 0.000 description 19
- 229910001374 Invar Inorganic materials 0.000 description 15
- 229910045601 alloy Inorganic materials 0.000 description 14
- 239000000956 alloy Substances 0.000 description 14
- 239000000243 solution Substances 0.000 description 14
- 238000010276 construction Methods 0.000 description 10
- 239000002210 silicon-based material Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 238000001039 wet etching Methods 0.000 description 6
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- 238000000137 annealing Methods 0.000 description 2
- 229910001423 beryllium ion Inorganic materials 0.000 description 2
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- 238000005520 cutting process Methods 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000010025 steaming Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
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- 230000004048 modification Effects 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000003319 supportive effect Effects 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (30)
Priority Applications (1)
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CN201710244086.6A CN108735899B (zh) | 2017-04-14 | 2017-04-14 | 用于oled蒸镀的荫罩及其制作方法、oled面板的制作方法 |
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CN201710244086.6A CN108735899B (zh) | 2017-04-14 | 2017-04-14 | 用于oled蒸镀的荫罩及其制作方法、oled面板的制作方法 |
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CN108735899A true CN108735899A (zh) | 2018-11-02 |
CN108735899B CN108735899B (zh) | 2022-02-01 |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW478035B (en) * | 1999-07-28 | 2002-03-01 | Nippon Electric Co | Electron beam exposure mask and method for manufacturing electron beam exposure mask |
CN101211104A (zh) * | 2006-12-29 | 2008-07-02 | 海力士半导体有限公司 | 光掩模的制造方法和相移掩模的制造方法 |
JP2008196029A (ja) * | 2007-02-15 | 2008-08-28 | Seiko Epson Corp | 蒸着用マスクの製造方法および蒸着用マスク |
CN103864009A (zh) * | 2014-03-11 | 2014-06-18 | 中国电子科技集团公司第五十五研究所 | 利用介质膜掩膜板实现具有斜坡状边缘金属薄膜图形方法 |
-
2017
- 2017-04-14 CN CN201710244086.6A patent/CN108735899B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW478035B (en) * | 1999-07-28 | 2002-03-01 | Nippon Electric Co | Electron beam exposure mask and method for manufacturing electron beam exposure mask |
CN101211104A (zh) * | 2006-12-29 | 2008-07-02 | 海力士半导体有限公司 | 光掩模的制造方法和相移掩模的制造方法 |
JP2008196029A (ja) * | 2007-02-15 | 2008-08-28 | Seiko Epson Corp | 蒸着用マスクの製造方法および蒸着用マスク |
CN103864009A (zh) * | 2014-03-11 | 2014-06-18 | 中国电子科技集团公司第五十五研究所 | 利用介质膜掩膜板实现具有斜坡状边缘金属薄膜图形方法 |
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Effective date of registration: 20191021 Address after: 201206 Shanghai, Pudong New Area, China (Shanghai) free trade zone, new Jinqiao Road, No. 13, building 2, floor 27 Applicant after: Shanghai Shiou Photoelectric Technology Co.,Ltd. Address before: 201206 6 building, 45 Jinhai Road, Pudong New Area, Shanghai, 1000 Applicant before: SEEYA INFORMATION TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20200826 Address after: 230012 room a5-103, No.999, Wenzhong Road, Xinzhan District, Hefei City, Anhui Province Applicant after: Hefei Shiya Technology Co.,Ltd. Address before: 201206 Shanghai, Pudong New Area, China (Shanghai) free trade zone, new Jinqiao Road, No. 13, building 2, floor 27 Applicant before: Shanghai Shiou Photoelectric Technology Co.,Ltd. |
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CP01 | Change in the name or title of a patent holder |
Address after: Room a5-103, No.999, Wenzhong Road, Xinzhan District, Hefei City, Anhui Province, 230012 Patentee after: Vision Technology Co.,Ltd. Address before: Room a5-103, No.999, Wenzhong Road, Xinzhan District, Hefei City, Anhui Province, 230012 Patentee before: Hefei Shiya Technology Co.,Ltd. |