CN108733114A - The complex function circuit and electronic system of band-gap reference and electrification reset - Google Patents
The complex function circuit and electronic system of band-gap reference and electrification reset Download PDFInfo
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- CN108733114A CN108733114A CN201710273216.9A CN201710273216A CN108733114A CN 108733114 A CN108733114 A CN 108733114A CN 201710273216 A CN201710273216 A CN 201710273216A CN 108733114 A CN108733114 A CN 108733114A
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/561—Voltage to current converters
Abstract
A kind of complex function circuit and electronic system of band-gap reference and electrification reset, the complex function circuit include：Band-gap reference circuit is powered by supply voltage and generates bandgap voltage reference, and the band-gap reference circuit includes differential operational amplifier；Comparator, the comparator have offset voltage, and the comparator is suitable for being compared the first input end of the differential operational amplifier and the voltage of the second input terminal, to generate power-on reset signal.The complexity of circuit design can be reduced using the present invention program, and effectively improves the integrated level of integrated circuit.
Description
Technical field
The present invention relates to electronic circuit design field, more particularly to the complex function electricity of a kind of band-gap reference and electrification reset
Road and electronic system.
Background technology
With the sustainable development of integrated circuit (Integrated Circuit, abbreviation IC) technology, IC designs come into
The epoch of deep-submicron, complementary metal oxide semiconductor (Complementary Metal Oxide Semiconductor,
Abbreviation CMOS) batch production used 90nm even 65nm techniques, the development of IC is still with high frequency, high speed, high integration,
Multi-functional, low-power consumption is target.For many years, the development of technology is all following a mole theorem, every 3 years of the integrated level of IC chip
4 times are improved, but in terms of development angle, under new technology promotion, even if entire industry starts to develop to 10nm, IC is processed by technique
Temporarily there are no final conclusion, IC technologies develop still according to mole theorem for the restriction of the limit and economic bearing.So far, it is based on
Market competition, it is the IC technology motive force of development that product cost, which is continuously improved, and how down feature sizes design, and improve product
Can, effectively improving the integrated level of IC becomes most important problem.
Electrification reset (Power-on Reset, abbreviation POR) circuit can generate power-on reset signal so that circuit works
In known state, it is therefore widely used in digital display circuit.Band-gap reference (Bandgap) circuit is for providing with power supply electricity
The smaller bandgap voltage reference of pressure, temperature change, generally 1.25V are therefore widely used in analog- and digital- system.Mesh
It is preceding in IC designs, the two more common circuit modules are mutual independent and are provided separately.
If a kind of complex function circuit can be designed, while realizing band-gap reference generation and two kinds of functions of electrification reset,
Namely when IC is powered on again, you can power-on reset signal can be generated by generating bandgap voltage reference, this would be beneficial for for integrated
The raising of circuit level.
Invention content
The technical problem that the present invention solves be how to design one kind can be achieved at the same time band-gap reference generate and on reply by cable
The complex function circuit of position.
In order to solve the above technical problems, the embodiment of the present invention provides a kind of complex function electricity of band-gap reference and electrification reset
Road, the complex function circuit include：Band-gap reference circuit is powered by supply voltage and generates bandgap voltage reference, the band
Gap reference circuit includes differential operational amplifier；There is offset voltage, the comparator to be suitable for institute for comparator, the comparator
The voltage of the first input end and the second input terminal of stating differential operational amplifier is compared, to generate power-on reset signal.
Optionally, the complex function circuit further includes：Offset voltage adjusts unit, couples the comparator, is suitable for root
The offset voltage of the comparator is adjusted according to the power-on reset signal, described in the logic level instruction of the power-on reset signal
Band-gap reference circuit is in and powers on or the state of power down.
Optionally, when the band-gap reference circuit powers on, the power-on reset signal is the first logic level, the mistake
The offset voltage that voltage regulation unit adjusts the comparator is adjusted to be equal to the first offset voltage；When the band-gap reference circuit power down
When, the power-on reset signal is the second logic level different from first logic level, and the offset voltage adjusts single
The offset voltage that member adjusts the comparator is equal to the second offset voltage, and second offset voltage is more than the first imbalance electricity
Pressure.
Optionally, the comparator includes：First amplification metal-oxide-semiconductor, control terminal couple the first input of the comparator
The first input end at end and the differential operational amplifier；Second amplification metal-oxide-semiconductor, control terminal couple the second of the comparator
Second input terminal of input terminal and the differential operational amplifier.
Optionally, the offset voltage adjusting unit includes：Third amplifies metal-oxide-semiconductor, the control of the third amplification metal-oxide-semiconductor
The control terminal of end coupling the second amplification metal-oxide-semiconductor, output end coupling the second amplification MOS of the third amplification metal-oxide-semiconductor
The output end of pipe；Data selector, control terminal access data select signal, and the data select signal is replied by cable according on described
Position signal generates, and output end couples the input terminal of the third amplification metal-oxide-semiconductor, and first input end couples the third amplification
The output end of metal-oxide-semiconductor, the second input terminal couples the input terminal of the second amplification metal-oxide-semiconductor, when the power-on reset signal is
When first logic level, the data select signal controls the first input end and its output end phase of the data selector
Connection, when the power-on reset signal is second logic level, the data select signal controls the data selection
Second input terminal of device is connected with its output end.
Optionally, the complex function circuit further includes：Phase inverter, input terminal access the power-on reset signal,
Output end exports the data select signal.
Optionally, the breadth length ratio of the first amplification metal-oxide-semiconductor is less than the described second breadth length ratio for amplifying metal-oxide-semiconductor.
Optionally, the comparator further includes：Bias unit, the coupling first amplification input terminal of metal-oxide-semiconductor and described
The input terminal of second amplification metal-oxide-semiconductor, is suitable for the first amplification metal-oxide-semiconductor and the second amplification metal-oxide-semiconductor provides bias current；First
Current mirror, input terminal couple the output end of the first amplification metal-oxide-semiconductor, public source ground connection；Second current mirror, input
The output end of end coupling the second amplification metal-oxide-semiconductor, public source ground connection；First feedback metal-oxide-semiconductor, input terminal access power supply
Reference edge, output end couple the output end of first current mirror；Second feedback metal-oxide-semiconductor, input terminal access the power supply
Reference edge, output end couple the output end of second current mirror and the output end of the comparator, control terminal coupling
The control terminal of the first feedback metal-oxide-semiconductor.
Optionally, the bias unit includes：First biasing metal-oxide-semiconductor, input terminal accesses the power source reference end, defeated
The outlet coupling first amplification metal-oxide-semiconductor and the second amplification metal-oxide-semiconductor, control terminal access bias voltage.
Optionally, the differential operational amplifier includes：4th amplification metal-oxide-semiconductor, the 5th amplification metal-oxide-semiconductor and the second biasing
Metal-oxide-semiconductor, wherein output end coupling the 4th amplification metal-oxide-semiconductor of the second biasing metal-oxide-semiconductor and the 5th amplification metal-oxide-semiconductor,
The control terminal of the second biasing metal-oxide-semiconductor accesses the bias voltage.
Optionally, the band-gap reference circuit further includes：First triode, collector connect its base stage, emitter
Couple the second input terminal of the differential operational amplifier；Second triode, collector connect its base stage；First resistor, institute
The first end for stating first resistor couples the emitter of second triode, and the second end of the first resistor couples the difference
The first input end of operational amplifier；Third feeds back metal-oxide-semiconductor, and input terminal accesses the supply voltage, and control terminal couples institute
The output end of differential operational amplifier is stated, the output end of the third feedback metal-oxide-semiconductor couples the emitter of first triode；
4th feedback metal-oxide-semiconductor, input terminal access the supply voltage, and control terminal couples the output of the differential operational amplifier
The output end at end, the 4th feedback metal-oxide-semiconductor couples the second end of the first resistor；Third transistor, collector connection
Its base stage；Second resistance, the first end of the second resistance couple the emitter of the third transistor, the second resistance
Second end exports the bandgap voltage reference；Mirror image metal-oxide-semiconductor, control terminal couple the control terminal of the 4th feedback metal-oxide-semiconductor,
Input terminal accesses the supply voltage, and output end couples the second end of the second resistance.
In order to solve the above technical problems, the embodiment of the present invention also provides a kind of electronic system, the electronic system includes institute
State the complex function circuit of band-gap reference and electrification reset.
Compared with prior art, the technical solution of the embodiment of the present invention has the advantages that：
The band-gap reference of the embodiment of the present invention and the complex function circuit of electrification reset may include band-gap reference circuit and
Comparator.When the band-gap reference circuit powers on, the first input end of internal differential operational amplifier and the second input
The voltage at end is started from scratch rising, and the band-gap reference circuit generates bandgap voltage reference.The comparator has offset voltage,
It can be arranged after supply voltage stabilization, the voltage of the first input end of the differential operational amplifier and the second input terminal is more than
The offset voltage of the comparator, the comparator are suitable for inputting the first input end of the differential operational amplifier and second
The voltage at end is compared, and to generate power-on reset signal, the band-gap reference circuit is exported and replied by cable before and after powering on
The logic level of position signal is different, to realize electrification reset, when the band-gap reference circuit power down, and the power-on reset signal
Logic level overturning, to realize detection of power loss.Therefore, the present invention program is by being multiplexed the first of the differential operational amplifier
The voltage of input terminal and the second input terminal, band-gap reference and electrification reset are can be realized simultaneously when powering on, and are reduced circuit and are set
The complexity of meter effectively improves the integrated level of integrated circuit.
Furthermore, the complex function circuit of the embodiment of the present invention can also include：Offset voltage adjusts unit, is suitable for
The offset voltage of the comparator is adjusted according to the power-on reset signal, the logic level of the power-on reset signal indicates institute
It states band-gap reference circuit and is in and power on or the state of power down.Specifically, described to power on when the band-gap reference circuit powers on
Reset signal is the first logic level, and the offset voltage adjusts unit and adjusts the offset voltage of the comparator equal to the first mistake
Adjust voltage；When the band-gap reference circuit power down, the power-on reset signal is the different from first logic level
Two logic levels, the offset voltage adjust unit and adjust the offset voltage of the comparator equal to the second offset voltage.Due to
Second offset voltage is more than first offset voltage, therefore, when the band-gap reference circuit power down, only when described
Supply voltage restores again so that the voltage of the first input end of the differential operational amplifier and the second input terminal is more than higher
The second offset voltage be just identified as powering on, increase the difficulty for being identified as powering on, when again succeed after the power is turned on, the ratio
First offset voltage is reverted to compared with the offset voltage of device, only when the supply voltage power down makes the calculus of differences put
The big first input end of device and the voltage of the second input terminal are just identified as power down less than lower second offset voltage, increase
It is identified as the difficulty of power down, is so designed with conducive to the stability of the complex function circuit electrification reset is improved.
Furthermore, the bias unit in the comparator includes：First biasing metal-oxide-semiconductor, control terminal access biasing
Voltage, the differential operational amplifier in the band-gap reference circuit include：Second biasing metal-oxide-semiconductor, described in control terminal also accesses
Bias voltage is conducive to the matching of the comparator and the differential operational amplifier.
Description of the drawings
Fig. 1 is a kind of schematic block diagram of electrification reset circuit in the prior art.
Fig. 2 is the circuit diagram of another electrification reset circuit in the prior art.
Fig. 3 is a kind of circuit diagram of band-gap reference circuit in the prior art.
Fig. 4 is the circuit diagram of the complex function circuit of a kind of band-gap reference of the embodiment of the present invention and electrification reset.
Fig. 5 is the circuit diagram of the complex function circuit of another kind of embodiment of the present invention band-gap reference and electrification reset.
Fig. 6 is the circuit diagram that comparator and offset voltage adjust unit in the embodiment of the present invention.
Fig. 7 is the wave simulation figure of supply voltage and power-on reset signal when powering in the embodiment of the present invention.
Fig. 8 is the wave simulation figure of supply voltage and power-on reset signal in power down in the embodiment of the present invention.
Fig. 9 is the wave simulation figure that bandgap voltage reference varies with temperature in the embodiment of the present invention.
Figure 10 be in the embodiment of the present invention bandgap voltage reference with the wave simulation figure of mains voltage variations.
Figure 11 is the wave simulation figure of the supply-voltage rejection ratio of bandgap voltage reference in the embodiment of the present invention.
Specific implementation mode
As described in the background section, at present in integrated circuit (Integrated Circuit, abbreviation IC) design, on
Reset (Power-on Reset, abbreviation POR) circuit and band-gap reference (Bandgap) circuit are all independently separately to set mutually
It sets so that the integrated level of IC still has improvable space.
Present inventor analyzes electrification reset circuit in the prior art and band-gap reference circuit respectively.
First, electrification reset circuit in the prior art can be mainly divided into two classes：Electrification reset circuit based on delay
With the electrification reset circuit based on reference voltage.
As shown in Figure 1, the electrification reset circuit 100 based on delay may include delay circuit 101 and pulse generating circuit
102, when detecting supply voltage, after the delayed-action of the delay circuit 101, the pulse generating circuit 102 produces
What the logic level of raw pulse signal P1, the pulse signal P1 can reflect the supply voltage establishes situation, in realization
Reset.However, the timeliness that on the one hand the delayed impact electrification reset of the delay circuit detects, it on the other hand cannot be timely
Detect the case where power down (brown-out) in ground.
Based on the above technical problem, there is also a kind of electrification reset circuits based on reference voltage in the prior art.Such as Fig. 2
Shown, electrification reset circuit 200 may include：Resistance R1With resistance R2The bleeder circuit (not indicated in figure) of composition generates reference
Voltage VREFBand-gap reference circuit 201, be adapted to compare the reference voltage VREFWith the partial pressure result V of the bleeder circuitR's
Comparator CMP and logic circuit (not indicated in figure).The logic circuit may include with door L1, it is described to be suitable for door L1
To the comparison result COMPOUT and logical signal V of the comparator CMPCRDCarry out logical operation.As supply voltage VDDWhen establishing,
The partial pressure result V of the bleeder circuitRIt can be designed as being more than the reference voltage VREF, at this point, the ratio of the comparator CMP
Can be logic high compared with result COMPOUT, meanwhile, NMOS tube N1, pull-up resistor R3 in the logic circuit and anti-
Phase device I1 makes the logical signal VCRDFor logic high so that the reset signal RSTB with door L1 outputs is logic
High level.And work as the supply voltage VDDWhen being revoked, no matter make the partial pressure result V of the bleeder circuitRLess than the ginseng
Examine voltage VREF, or making the NMOS tube N1 shutdowns, under the action of described and door L1, the reset signal RSTB becomes
Logic low, to realize detection of power loss.Although the electrification reset circuit 200 can functionally realize well power on and
Detection of power loss, however, one side circuit element is more, another aspect resistance R1With resistance R2Occupied circuit area is larger, makes
The integrated level for obtaining integrated circuit is not high.
Secondly, a kind of circuit diagram of band-gap reference circuit in the prior art can be found in Fig. 3.As shown in figure 3, band-gap reference
Circuit 300 uses the summation structure of the voltage with differential operational amplifier.Specifically, the band-gap reference circuit 300 can be with
Including following circuits or device：
Differential operational amplifier OPA has first input end (such as positive input terminal) A and the second input terminal (such as negative defeated
Enter end) B；
First triode Q1, collector connect its base stage, and emitter couples the of the differential operational amplifier OPA
Two input terminal B；
Second triode Q2, collector connect its base stage；
The first end of first resistor R1, the first resistor R1 couple the emitter of the second triode Q2, and described
The second end of one resistance R1 couples the first input end A of the differential operational amplifier OPS；
Third feeds back metal-oxide-semiconductor MP3, and input terminal accesses the supply voltage VDD, and control terminal couples the calculus of differences
The output end of the output end of amplifier OPA, the third feedback metal-oxide-semiconductor MP3 couples the emitter of the first triode Q1；
4th feedback metal-oxide-semiconductor MP4, input terminal access the supply voltage VDD, and control terminal couples the calculus of differences
The output end of the output end of amplifier OPA, the 4th feedback metal-oxide-semiconductor MP4 couples the second end of the first resistor R1；
Third transistor Q3, collector connect its base stage；
Second resistance R2, the first end of the second resistance R2 couple the emitter of the third transistor Q3, and described
The second end of two resistance R2 exports the bandgap voltage reference VBG；
Mirror image metal-oxide-semiconductor MP5, control terminal couple the control terminal of the 4th feedback metal-oxide-semiconductor MP4, and input terminal accesses institute
Supply voltage VDD is stated, output end couples the second end of the second resistance R2.
The band-gap reference circuit 300 can also include start-up circuit (not shown), and output end couples the difference fortune
The first input end A or the second input terminal B for calculating amplifier OPA, for feeding back the feedbacks of metal-oxide-semiconductor MP3 or the 4th MOS for the third
Pipe MP4 provides bias current, and the band-gap reference circuit 300 is assisted to start, after the normal work of the band-gap reference circuit 300
Failure.
It is as follows to the principle Analysis of the band-gap reference circuit 300：Using positive temperature in the band-gap reference circuit 300
The mode that the device of the device and negative temperature coefficient of spending coefficient is combined generates the bandgap voltage reference VBG of zero-temperature coefficient.
Further, the base area of bipolar transistor-emitter region voltage difference (is set as Δ VBE) have just under the biasing of different current densities
Temperature coefficient, and the base area of itself-emitter region voltage (is set as VBE) there is negative temperature coefficient, the two voltage linears to be superimposed,
Obtain the reference voltage source of appropriate approximate zero-temperature coefficient.
If VAAnd VBThe respectively voltage of the first input end A of differential operational amplifier OPA and the second input terminal B, VBGFor
The amplitude of bandgap voltage reference VBG, R1And R2The respectively resistance value of first resistor R1 and second resistance R2, the 4th feedback metal-oxide-semiconductor
MP4 and third feedback metal-oxide-semiconductor MP3k is identical transistor, the collector electricity that k is the second triode Q2 and the first triode Q1
The ratio between stream, I3 are the collector current of third transistor, and I2 is the collector current of the second triode, Δ VBE12For the two or three pole
The difference of the base area of pipe Q2 and the first triode Q1-emitter region voltage, VBE3For base area-emitter region voltage of third transistor Q3.
Then there is VBG=VBE3+I3×R2, due to the 4th feedback metal-oxide-semiconductor MP4 and the 5th feedback metal-oxide-semiconductor MP5 grid and
Source electrode is connected, then I2=I3, then, VBG=VBE3+I2×R2=VBE3+ΔVBE12÷R1×R2=VBE3+(VA-VB)÷R1×R2
=VBE3+VT×lnk÷n1×R2, wherein VTTo be proportional to the constant of temperature T.
It in specific implementation, can be by adjusting base area-emitter region voltage of third transistor Q3, first resistor R1 and the
The ratio between collector current of the resistance value of two resistance R2 and the second triode Q2 and the first triode Q1 (namely the size of the two
Than) the adjusting amplitude described bandgap voltage reference VBG.
For techniques discussed above problem, the embodiment of the present invention proposes a kind of compound work(of band-gap reference and electrification reset
Energy circuit, by being multiplexed the voltage of the first input end and the second input terminal of differential operational amplifier in band-gap reference circuit,
It can be achieved at the same time two kinds of functions of band-gap reference and electrification reset when powering on, reduce the complexity of circuit design, effectively carry
The high integrated level of integrated circuit.
It is understandable to enable above-mentioned purpose, feature and the advantageous effect of the present invention to become apparent, below in conjunction with the accompanying drawings to this
The specific embodiment of invention is described in detail.
Fig. 4 is the circuit diagram of the complex function circuit of a kind of band-gap reference of the embodiment of the present invention and electrification reset.
As shown in figure 4, the complex function circuit 400 of band-gap reference and electrification reset may include band-gap reference circuit 300
With comparator 401.
Wherein, the band-gap reference circuit 300 is powered by supply voltage VDD and generates bandgap voltage reference VBG, the band
Gap reference circuit 300 includes differential operational amplifier OPA.When the band-gap reference circuit 300 powers on, internal difference fortune
The voltage for calculating the first input end A and the second input terminal B of amplifier OPA is started from scratch rising, and with the supply voltage VDD
Stablize and tend towards stability.
It should be noted that the band-gap reference circuit 300 can be as shown in figure 3 band-gap reference circuit circuit structure phase
Together, but not limited to this, other band-gap reference circuits can also be used, if bandgap voltage reference can be generated after the power-up, and extremely
Include differential operational amplifier less.Band gap base of the embodiment of the present invention with the band-gap reference circuit 300 as shown in figure 3
It is shown in Figure of description for the circuit structure of quasi- circuit is identical.
The comparator 401 has offset voltage, for example, the supply voltage VDD can be 3.3V, the offset voltage
Can be 1.2V.The comparator 401 is suitable for first input end A and the second input terminal B to the differential operational amplifier OPA
Voltage be compared, to generate power-on reset signal RST.
Preferably, can be arranged after supply voltage VDD stablizes, the first input end A of the differential operational amplifier OPA
It is more than the offset voltage of the comparator 401 with the voltage of the second input terminal B.So, it is powered in the band-gap reference circuit 300
Afterwards, the voltage of the first input end A of the differential operational amplifier OPA and the second input terminal B are begun to ramp up from 0, when it is more than
When the offset voltage of the comparator 401, the power-on reset signal RST is the first logic level (such as logic low)；
When 300 power down of band-gap reference circuit, the first input end A of the differential operational amplifier OPA and the second input terminal B's
Voltage is begun to decline to 0, and when it is less than the offset voltage of the comparator 401, the power-on reset signal RST overturnings is not
It is same as the second logic level (such as logic high) of first logic level, to realize electrification reset and detection of power loss.
Therefore, the complex function circuit 400 of the embodiment of the present invention is by being multiplexed the first of the differential operational amplifier OPA
The voltage of input terminal A and the second input terminal B when powering on while can realize band-gap reference and electrification reset, reduce circuit
The complexity of design effectively improves the integrated level of integrated circuit.Further,
Fig. 5 is the circuit diagram of the complex function circuit of another kind of embodiment of the present invention band-gap reference and electrification reset.
As shown in figure 5, the complex function circuit 500 of band-gap reference and electrification reset and the complex function circuit shown in Fig. 4
400 is substantially similar, and difference includes that the complex function circuit 500 can also include further that offset voltage adjusts unit
402.Wherein, the offset voltage adjusts unit 402 and couples the comparator 401, and the offset voltage adjusts unit 402 and is suitable for
The offset voltage of the comparator 401, the logic of the power-on reset signal RST are adjusted according to the power-on reset signal RST
Band-gap reference circuit 300 described in level indicating is in and powers on or the state of power down.
For example, when the band-gap reference circuit 300 powers on, the power-on reset signal RST can patrol for described first
Level (such as logic low) is collected, the offset voltage, which adjusts unit 402, can adjust the offset voltage of the comparator 401
Equal to the first offset voltage；When 300 power down of band-gap reference circuit, the power-on reset signal RST is different from described
Second logic level (such as logic high) of first logic level, the offset voltage adjust unit 402 and can adjust
The offset voltage for saving the comparator 401 is equal to the second offset voltage, and second offset voltage is more than the first imbalance electricity
Pressure.
Since second offset voltage is more than first offset voltage, when the band-gap reference circuit 300 falls
Electricity, only when the supply voltage VDD restores again so that the first input end A and second of the differential operational amplifier OPA
The voltage of input terminal B is just identified as powering on more than higher second offset voltage, the logic electricity of the power-on reset signal RST
It is flat just to have overturning, increase the difficulty for being identified as powering on.When again succeed after the power is turned on, the offset voltage of the comparator 401
Lower first offset voltage is reverted to, only when the supply voltage VDD power down so that the differential operational amplifier
The voltage of the first input end A of OPA and the second input terminal B can just be identified as power down less than first offset voltage.So
Design can be resisted in the supply voltage VDD by frequent and small size fluctuation, but not influence integrated circuit function situation
It when lower, will not be identified as powering on or power down, be conducive to the stability for improving 500 electrification reset of the complex function circuit.
Fig. 6 is the circuit diagram that comparator and offset voltage adjust unit in the embodiment of the present invention.
As shown in fig. 6, in specific implementation, the comparator (not indicated in figure) may include the first amplification metal-oxide-semiconductor
The amplification metal-oxide-semiconductors of MPA1 and second MPA2.The embodiment of the present invention only amplifies the amplification metal-oxide-semiconductors of metal-oxide-semiconductor MPA1 and second with described first
MPA2 is to illustrate for PMOS tube, but not limited to this, they can also be NMOS tube.Wherein, the first amplification metal-oxide-semiconductor
The control terminal (namely grid) of MPA1 couples first input end (namely positive input terminal, figure in do not indicate) and the institute of the comparator
State the first input end A of differential operational amplifier OPA；Control terminal (namely grid) coupling of the second amplification metal-oxide-semiconductor MPA2
The second input terminal (namely negative input end, figure in do not indicate) of the comparator and the second of the differential operational amplifier OPA
Input terminal B.
Furthermore, the offset voltage adjusting unit (not indicated in figure) may include：Third amplifies metal-oxide-semiconductor MPA3
With data selector (Multiplexer, abbreviation MUX) 403.Wherein：
The type of the third amplification metal-oxide-semiconductor MPA3 amplifies the amplification metal-oxide-semiconductors of metal-oxide-semiconductor MPA1 and second MPA2 with described first
It is identical, it is PMOS tube.Control terminal (namely grid) coupling the second amplification metal-oxide-semiconductor of the third amplification metal-oxide-semiconductor MPA3
The control terminal of MPA2, output end (namely drain electrode) coupling the second amplification metal-oxide-semiconductor MPA2 of the third amplification metal-oxide-semiconductor MPA3
Output end (namely drain electrode).
Control terminal (not indicated in figure) the access data select signal S of the data selector 403, the data selection letter
Number S is generated according to the power-on reset signal RST, for example, the logic level of the data select signal S can be powered on described
Reset signal RST is identical or opposite.The output end of the data selector 403 couples the third amplification metal-oxide-semiconductor MPA3's
The first input end X of input terminal (namely source electrode), the data selector 403 couples the defeated of the third amplification metal-oxide-semiconductor MPA3
Outlet, the second input terminal of the data selector 403 couple the input terminal of the second amplification metal-oxide-semiconductor MPA2.
In specific implementation, when the power-on reset signal RST is first logic level (such as logic low)
When, the first input end X that the data select signal S controls the data selector 403 is connected with its output end Y, in order to
Simplify, be expressed as X=Y so that the input terminal of the third amplification metal-oxide-semiconductor MPA3 is connected with output end, and the third amplifies MOS
Pipe MPA3 is short-circuited；When the power-on reset signal RST is described second logic level (such as logic high), the number
The second input terminal Z that the data selector 403 is controlled according to selection signal S is connected with its output end Y, to put it more simply, indicating
For Z=Y so that the third amplification metal-oxide-semiconductor MPA3 is in parallel with the second amplification metal-oxide-semiconductor MPA2, the second amplification metal-oxide-semiconductor MPA2
Equivalent breadth length ratio increase.
Together referring to Fig. 5 and Fig. 6, in specific implementation, the complex function circuit 500 can also include：Phase inverter
404, input terminal accesses the power-on reset signal RST, and output end exports the data select signal S namely the number
With the logic level of the power-on reset signal RST it is opposite according to selection signal S.
Furthermore, the breadth length ratio of the first amplification metal-oxide-semiconductor MPA1 can be less than the second amplification metal-oxide-semiconductor MPA2
Breadth length ratio, to cause the mismatch (dismatch) of the comparator so that the offset voltage of the comparator is equal to described the
One offset voltage.The second imbalance electricity can be adjusted by setting the local breadth length ratio for adjusting the third and amplifying metal-oxide-semiconductor MPA3
Pressure.For example, the ratio between the breadth length ratio of the first, second, and third amplification metal-oxide-semiconductor is 2:6:1, but not limited to this.When the data
When the X=Y of selector 403, the ratio between the breadth length ratio of two amplification metal-oxide-semiconductors of the comparator is 1：3, when the data selector
When 403 Z=Y, the ratio between the breadth length ratio of two amplification metal-oxide-semiconductors of the comparator is 1：3.5 so that second offset voltage is big
In first offset voltage, and meet system design considerations.
With continued reference to Fig. 6, in embodiments of the present invention, the comparator can also include：Bias unit (is not marked in figure
Show), the first current mirror CM1, the second current mirror CM2, the first feedback metal-oxide-semiconductor MPF1 and the second feedback metal-oxide-semiconductor MPF2.Wherein：
The bias unit couples the input terminal of the first amplification metal-oxide-semiconductor MPA1 and the second amplification metal-oxide-semiconductor MPA2
Input terminal, be suitable for the first amplification metal-oxide-semiconductor MPA1 and the second amplification metal-oxide-semiconductor MPA2 provide bias current.
The first current mirror CM1 and the second current mirror CM2 is the load of the comparator.Also, such as art technology
Known to personnel, current mirror has input, output end and public source.Wherein, the input terminal coupling of the first current mirror CM1
The output end of the first amplification metal-oxide-semiconductor MPA1, public source ground connection；The input terminal of the second current mirror CM2 couples institute
State the output end of the second amplification metal-oxide-semiconductor MPA2, public source ground connection.
The input terminal access power source reference end of the first feedback metal-oxide-semiconductor MPF1, the first feedback metal-oxide-semiconductor MPF1's is defeated
Outlet couples the output end of the first current mirror CM1；Wherein, the power source reference end can couple the output end of power-supply device
Mouthful, in the present embodiment, the power source reference end can access the supply voltage VDD, so that the band-gap reference circuit
300 power on simultaneously with the comparator, but not limited to this, the power source reference end can also access other voltages, as long as can be with
It powers to the comparator, and in the range of error allows, it is synchronous with the variation tendency of supply voltage VDD.
The input terminal of the second feedback metal-oxide-semiconductor MPF2 accesses the power source reference end, the second feedback metal-oxide-semiconductor MPF2
Output end couple the output end of the second current mirror CM2 and the output end of the comparator, the second feedback metal-oxide-semiconductor
The control terminal of MPF2 couples the control terminal of the first feedback metal-oxide-semiconductor MPF1.
In specific implementation, the bias unit may include the first biasing metal-oxide-semiconductor MPB1, and input terminal accesses the electricity
Source reference end, the output end coupling first amplification metal-oxide-semiconductor MPA1 and the second amplification metal-oxide-semiconductor MPA2, control terminal access are inclined
Set voltage Vb.
It should be noted that the comparator is only by taking circuit structure shown in fig. 6 as an example, but is not limited thereto, for example,
Amplification metal-oxide-semiconductor therein, feedback metal-oxide-semiconductor and biasing metal-oxide-semiconductor all can be NMOS tube, load therein namely current mirror can be with
For p-type current mirror, or even the load using other forms, it is only necessary to suitably adjust the connection type of circuit, the present invention
Embodiment without illustrating one by one.
With continued reference to Fig. 5 and Fig. 6, the differential operational amplifier OPA may include：4th amplification metal-oxide-semiconductor (not shown),
5th amplification metal-oxide-semiconductor (not shown) and the second biasing metal-oxide-semiconductor (not shown), wherein the output end coupling of the second biasing metal-oxide-semiconductor
The 4th amplification metal-oxide-semiconductor and the 5th amplification metal-oxide-semiconductor are connect, the control terminal of the second biasing metal-oxide-semiconductor accesses the biasing
Voltage Vb is conducive to the matching of the comparator and the differential operational amplifier OPA.
Fig. 7 to Figure 11 is the wave simulation figure of the internal signal according to Fig. 5 and complex function circuit shown in fig. 6 500.Institute
There is emulation to be based on 55nm process conditions, the transistor in the complex function circuit 500 is operated in sub-threshold region, meets circuit
Low-power consumption demand.Table 1 shows and emulates relevant parameter, symbol, condition and result.
Table 1
It is illustrated respectively below in conjunction with table 1.As shown in fig. 7, supply voltage VDD is 3.3V, rise time Tr is
Under the simulated conditions that 10us, temperature T are 25 DEG C, when supply voltage VDD just starts to rise from 0, power-on reset signal RST slightly can
The shake ignored, when supply voltage VDD is increased over 2.6V, power-on reset signal RST is overturn, namely corresponding
Minimum in table 1 powers on saltus step level (Trip voltage of power ramp-up) Vtp-UP=2.6V.Then, electric
Source voltage VDD continues to rise, until in 12.45 μ s, rises to 3.3V, the logic level of the power-on reset signal RST with
Supply voltage VDD is equal.
As shown in figure 8, under simulated conditions identical with the simulation waveform described in Fig. 7, stablize in the supply voltage VDD
When 3.3V, the offset voltage of the comparator is equal to the first offset voltage.Together referring to Fig. 5 and Fig. 6, if system just starts
The logic level of electricity, the power-on reset signal RST also keeps equal with the supply voltage VDD, until the supply voltage
Power-down to less than 1.24V so that the voltage of the first input end A of the differential operational amplifier OPA and the second input terminal B are less than
When first offset voltage, power-on reset signal RST overturning is the logic low in figure, and voltage levels off to 0, i.e.,
Corresponding to maximum power down saltus step level (Trip voltage of power ramp-down) Vtp-DN=1.24V in table 1.
At this point, according to the effect of data select signal S, the Z=Y in data selector 403 so that the offset voltage etc. of the comparator
In the second offset voltage, in the simulation result of this figure when the supply voltage VDD restores to more than 2.6V so that
The voltage of the first input end A of the differential operational amplifier OPA and the second input terminal B are more than second offset voltage, institute
The logic level for stating power-on reset signal RST is just overturn again, the logic level of the follow-up power-on reset signal RST with it is described
Supply voltage VDD is equal, and the offset voltage of the comparator is also restored to first offset voltage.As can be seen that described
When supply voltage VDD is by frequent and small size fluctuation, power down will not be identified as, and after complete power down, small size electricity
Pressure rising will not be identified position and power on, and the complex function circuit 500 has the good detection stability powered on power down.
As shown in figs. 5 and 9, the bandgap voltage reference VBG exported for above-mentioned band-gap reference circuit 300, in power supply electricity
It presses under the simulated conditions that VDD is 3.3V, temperature is scanned, scanning range is -45 DEG C to 125 DEG C, can through emulating and analyzing
To obtain：The temperature coefficient of the bandgap voltage reference VBG is 13.4ppm/ DEG C, has lower temperature coefficient.
As shown in figure 5 and figure 10, the bandgap voltage reference VBG exported again for above-mentioned band-gap reference circuit 300, in temperature
Under the simulated conditions that degree is 25 DEG C, supply voltage VDD is scanned, steps variation between being allowed to from 2.97V to 3.63V,
It can be obtained through emulation：The minimum value of the bandgap voltage reference VBG is 1.167V, maximum value 1.169V, and stability is preferable.
As shown in Fig. 5 and Figure 11, also directed to the power supply for the bandgap voltage reference VBG that above-mentioned band-gap reference circuit 300 exports
Inhibition is emulated than (Power supply ripple rejection, abbreviation PSRR), and simulated conditions are supply voltage
VDD is 3.3V, and temperature T is 25 DEG C, and obtained simulation result is PSRR=50.89dB, and in contrast, the PSRR obtained meets work
Industry standard, the bandgap voltage reference VBG are influenced smaller by mains voltage variations.
In addition, the supply current Icc of complex function circuit 500 shown in fig. 5 is only 0.5 μ A, there is lower power consumption.
In summary, the complex function circuit of the band-gap reference and electrification reset of the embodiment of the present invention is in generation amplitude
While the bandgap voltage reference that 1.17V, temperature coefficient are 13.4ppm/ DEG C, PSRR is 50.89dB, can to system electrification and
Power down is detected, low in energy consumption, and design and laying out pattern are simple, and characteristic size is small, meets submicron design demand.
The present invention program also discloses a kind of electronic system, including the complex function of above-mentioned band-gap reference and electrification reset electricity
Road 400 or 500.In specific implementation, the electronic system can be the circuit module being carried on printed circuit board, Ke Yicheng
It is loaded in chip, the present embodiment is without specifically limited.
It should be noted that " logic high " and " logic low " herein is opposite logic level, " logic
High level " refers to that the level range that can be identified as digital signal " 1 ", " logic low " refer to that number can be identified as
The level range of signal " 0 ", specific level range are simultaneously not particularly limited.
Although present disclosure is as above, present invention is not limited to this.Any those skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (12)
1. the complex function circuit of a kind of band-gap reference and electrification reset, which is characterized in that including：
Band-gap reference circuit is powered by supply voltage and generates bandgap voltage reference, and the band-gap reference circuit includes difference fortune
Calculate amplifier；
Comparator, the comparator have offset voltage, the comparator defeated suitable for first to the differential operational amplifier
The voltage for entering end and the second input terminal is compared, to generate power-on reset signal.
2. complex function circuit according to claim 1, which is characterized in that further include：
Offset voltage adjusts unit, the comparator is coupled, suitable for adjusting the comparator according to the power-on reset signal
Offset voltage, the logic level of the power-on reset signal indicate that the band-gap reference circuit is in and power on or the shape of power down
State.
3. complex function circuit according to claim 2, which is characterized in that when the band-gap reference circuit powers on, institute
It is the first logic level to state power-on reset signal, and the offset voltage that the offset voltage adjusting unit adjusts the comparator is equal to
First offset voltage；When the band-gap reference circuit power down, the power-on reset signal is different from first logic electricity
The second flat logic level, the offset voltage adjust unit and adjust the offset voltage of the comparator equal to the second imbalance electricity
Pressure, second offset voltage are more than first offset voltage.
4. complex function circuit according to claim 3, which is characterized in that the comparator includes：
First amplification metal-oxide-semiconductor, control terminal couple the comparator first input end and the differential operational amplifier the
One input terminal；
Second amplification metal-oxide-semiconductor, control terminal couple the comparator the second input terminal and the differential operational amplifier the
Two input terminals.
5. complex function circuit according to claim 4, which is characterized in that the offset voltage adjusts unit and includes：
Third amplifies metal-oxide-semiconductor, and the control terminal of the third amplification metal-oxide-semiconductor couples the control terminal of the second amplification metal-oxide-semiconductor, described
The output end of third amplification metal-oxide-semiconductor couples the output end of the second amplification metal-oxide-semiconductor；
Data selector, control terminal access data select signal, and the data select signal is according to the power-on reset signal
It generates, output end couples the input terminal of the third amplification metal-oxide-semiconductor, and first input end couples the third and amplifies metal-oxide-semiconductor
Output end, the second input terminal couples the input terminal of the second amplification metal-oxide-semiconductor, when the power-on reset signal is described the
When one logic level, the first input end that the data select signal controls the data selector is connected with its output end,
When the power-on reset signal is second logic level, the data select signal controls the of the data selector
Two input terminals are connected with its output end.
6. complex function circuit according to claim 5, which is characterized in that further include：
Phase inverter, input terminal access the power-on reset signal, and output end exports the data select signal.
7. complex function circuit according to claim 4, which is characterized in that the breadth length ratio of the first amplification metal-oxide-semiconductor is small
In the breadth length ratio of the second amplification metal-oxide-semiconductor.
8. according to claim 4 to 7 any one of them complex function circuit, which is characterized in that the comparator further includes：
Bias unit, the input terminal of the input terminal and the second amplification metal-oxide-semiconductor of coupling the first amplification metal-oxide-semiconductor, is suitable for
The first amplification metal-oxide-semiconductor and the second amplification metal-oxide-semiconductor provide bias current；
First current mirror, input terminal couple the output end of the first amplification metal-oxide-semiconductor, public source ground connection；
Second current mirror, input terminal couple the output end of the second amplification metal-oxide-semiconductor, public source ground connection；
First feedback metal-oxide-semiconductor, input terminal access power source reference end, and output end couples the output end of first current mirror；
Second feedback metal-oxide-semiconductor, input terminal access the power source reference end, and output end couples the output of second current mirror
The output end of end and the comparator, control terminal couple the control terminal of the first feedback metal-oxide-semiconductor.
9. complex function circuit according to claim 8, which is characterized in that the bias unit includes：
First biasing metal-oxide-semiconductor, input terminal access the power source reference end, the output end coupling first amplification metal-oxide-semiconductor and
Second amplification metal-oxide-semiconductor, control terminal access bias voltage.
10. complex function circuit according to claim 9, which is characterized in that the differential operational amplifier includes：4th
Amplify metal-oxide-semiconductor, the 5th amplification metal-oxide-semiconductor and the second biasing metal-oxide-semiconductor, wherein described in the output end coupling of the second biasing metal-oxide-semiconductor
4th amplification metal-oxide-semiconductor and the 5th amplification metal-oxide-semiconductor, the control terminal of the second biasing metal-oxide-semiconductor access the bias voltage.
11. complex function circuit according to any one of claims 1 to 7, which is characterized in that the band-gap reference circuit is also
Including：
First triode, collector connect its base stage, and emitter couples the second input terminal of the differential operational amplifier；
Second triode, collector connect its base stage；
First resistor, the first end of the first resistor couple the emitter of second triode, and the of the first resistor
Two ends couple the first input end of the differential operational amplifier；
Third feeds back metal-oxide-semiconductor, and input terminal accesses the supply voltage, and control terminal couples the defeated of the differential operational amplifier
The output end of outlet, the third feedback metal-oxide-semiconductor couples the emitter of first triode；
4th feedback metal-oxide-semiconductor, input terminal access the supply voltage, and control terminal couples the defeated of the differential operational amplifier
The output end of outlet, the 4th feedback metal-oxide-semiconductor couples the second end of the first resistor；
Third transistor, collector connect its base stage；
Second resistance, the first end of the second resistance couple the emitter of the third transistor, and the of the second resistance
Two ends export the bandgap voltage reference；
Mirror image metal-oxide-semiconductor, control terminal couple the control terminal of the 4th feedback metal-oxide-semiconductor, and input terminal accesses the supply voltage,
Its output end couples the second end of the second resistance.
12. a kind of electronic system, which is characterized in that including described in any one of claim 1 to 11 band-gap reference and power on
The complex function circuit of reset.
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| CN109474263A (en) * | 2018-12-17 | 2019-03-15 | 上海贝岭股份有限公司 | A kind of electrification reset circuit |
| CN110868199A (en) * | 2019-11-04 | 2020-03-06 | 宁波大学 | Go up long time delay protection circuit |
| CN111831041A (en) * | 2019-04-15 | 2020-10-27 | 爱思开海力士有限公司 | Voltage generator, semiconductor device using the same, and semiconductor system |
| CN116896364A (en) * | 2023-09-06 | 2023-10-17 | 深圳市微源半导体股份有限公司 | Power-on reset detection circuit, integrated circuit and chip |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109474263A (en) * | 2018-12-17 | 2019-03-15 | 上海贝岭股份有限公司 | A kind of electrification reset circuit |
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| CN108733114B (en) | 2020-08-07 |
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