CN108713262B - 用于金属薄膜沉积的坩埚及用于金属薄膜沉积的蒸发源 - Google Patents

用于金属薄膜沉积的坩埚及用于金属薄膜沉积的蒸发源 Download PDF

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CN108713262B
CN108713262B CN201580085778.XA CN201580085778A CN108713262B CN 108713262 B CN108713262 B CN 108713262B CN 201580085778 A CN201580085778 A CN 201580085778A CN 108713262 B CN108713262 B CN 108713262B
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crucible
film deposition
thin film
metal thin
fusion
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CN108713262A (zh
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朴显植
崔在秀
吴泳晩
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Sunic System Ltd
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Sunic System Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
CN201580085778.XA 2015-12-18 2015-12-21 用于金属薄膜沉积的坩埚及用于金属薄膜沉积的蒸发源 Active CN108713262B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1020150181752A KR101761700B1 (ko) 2015-12-18 2015-12-18 금속 박막 증착용 도가니 및 금속 박막 증착용 증발원
KR10-2015-0181752 2015-12-18
PCT/KR2015/014031 WO2017104885A1 (ko) 2015-12-18 2015-12-21 금속 박막 증착용 도가니 및 금속 박막 증착용 증발원

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CN108713262A CN108713262A (zh) 2018-10-26
CN108713262B true CN108713262B (zh) 2021-02-26

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KR (1) KR101761700B1 (ko)
CN (1) CN108713262B (ko)
WO (1) WO2017104885A1 (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10801101B2 (en) * 2017-08-17 2020-10-13 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Vapor evaporation source
CN209619438U (zh) * 2019-01-17 2019-11-12 云谷（固安）科技有限公司 一种点蒸发源以及蒸镀设备
KR20200134531A (ko) 2019-05-22 2020-12-02 주식회사 선익시스템 열차단부를 구비한 도가니부재
CN114502767B (zh) * 2019-11-29 2023-10-27 Lg电子株式会社 沉积用坩埚

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63233092A (ja) * 1987-03-20 1988-09-28 Mitsubishi Metal Corp 石英製二重ルツボの製造方法
KR20110095982A (ko) * 2010-02-20 2011-08-26 진중 김 씨아이지에스 박막제조용 병합증발원
KR20130073407A (ko) * 2011-12-23 2013-07-03 주식회사 원익아이피에스 외부 가열용기를 포함하는 고온 증발원

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080013686A (ko) * 2006-08-08 2008-02-13 순천향대학교 산학협력단 대면적 기판에 박막을 적층하기 위한 장치
KR20130073406A (ko) * 2011-12-23 2013-07-03 주식회사 원익아이피에스 방열조립체를 포함하는 고온 증발원
JP2014072005A (ja) * 2012-09-28 2014-04-21 Hitachi High-Technologies Corp 蒸発源、真空蒸着装置及び有機ｅｌ表示装置製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63233092A (ja) * 1987-03-20 1988-09-28 Mitsubishi Metal Corp 石英製二重ルツボの製造方法
US5069741A (en) * 1987-03-20 1991-12-03 Mitsubishi Kinzoku Kabushiki Kaisha Method of manufacturing quartz double crucible assembly
KR20110095982A (ko) * 2010-02-20 2011-08-26 진중 김 씨아이지에스 박막제조용 병합증발원
KR20130073407A (ko) * 2011-12-23 2013-07-03 주식회사 원익아이피에스 외부 가열용기를 포함하는 고온 증발원

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WO2017104885A1 (ko) 2017-06-22
KR20170073171A (ko) 2017-06-28
KR101761700B1 (ko) 2017-07-28
CN108713262A (zh) 2018-10-26

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