CN108711583A - 一种新型背腐蚀刻边工艺 - Google Patents
一种新型背腐蚀刻边工艺 Download PDFInfo
- Publication number
- CN108711583A CN108711583A CN201810347358.XA CN201810347358A CN108711583A CN 108711583 A CN108711583 A CN 108711583A CN 201810347358 A CN201810347358 A CN 201810347358A CN 108711583 A CN108711583 A CN 108711583A
- Authority
- CN
- China
- Prior art keywords
- crystal silicon
- silicon chip
- carved
- sintering
- corrosion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 31
- 238000005260 corrosion Methods 0.000 title claims abstract description 24
- 230000007797 corrosion Effects 0.000 title claims abstract description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 31
- 239000013078 crystal Substances 0.000 claims abstract description 31
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 31
- 239000010703 silicon Substances 0.000 claims abstract description 31
- 238000005245 sintering Methods 0.000 claims abstract description 19
- 239000002253 acid Substances 0.000 claims abstract description 13
- 238000009792 diffusion process Methods 0.000 claims abstract description 10
- 238000000151 deposition Methods 0.000 claims abstract description 8
- 238000005137 deposition process Methods 0.000 claims abstract description 4
- 238000001514 detection method Methods 0.000 claims abstract description 4
- 238000001035 drying Methods 0.000 claims abstract description 4
- 230000002708 enhancing effect Effects 0.000 claims abstract description 4
- 235000008216 herbs Nutrition 0.000 claims abstract description 4
- 238000001465 metallisation Methods 0.000 claims abstract description 4
- 230000003287 optical effect Effects 0.000 claims abstract description 4
- 238000004806 packaging method and process Methods 0.000 claims abstract description 4
- 238000012360 testing method Methods 0.000 claims abstract description 4
- 210000002268 wool Anatomy 0.000 claims abstract description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 12
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- 229910017604 nitric acid Inorganic materials 0.000 claims description 6
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical group ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 3
- 239000000654 additive Substances 0.000 claims description 3
- 230000000996 additive effect Effects 0.000 claims description 3
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- 238000000605 extraction Methods 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- 125000004437 phosphorous atom Chemical group 0.000 claims description 3
- 238000007650 screen-printing Methods 0.000 claims description 3
- 229910000077 silane Inorganic materials 0.000 claims description 3
- 230000007480 spreading Effects 0.000 claims description 3
- 238000003892 spreading Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 239000006117 anti-reflective coating Substances 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 230000005684 electric field Effects 0.000 claims 1
- 238000002156 mixing Methods 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 3
- 239000013064 chemical raw material Substances 0.000 abstract description 2
- 239000012634 fragment Substances 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000012827 research and development Methods 0.000 description 2
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 1
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 1
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
Abstract
本发明公开的属于太阳能电池技术领域，具体为一种新型背腐蚀刻边工艺，该新型背腐蚀刻边工艺包括如下步骤：S1：制绒：对晶硅片表面进行预清洗并干燥，然后采用酸液对晶硅片进行腐蚀，将多晶表面做成凹坑状，得到陷光性能良好的绒面；S2：扩散；S3：背腐蚀；S4：镀减反射膜：在晶硅片的表面采用等离子体增强化学的气相沉积法沉积减反射膜；S5：丝网印刷金属化；S6：烧结：把晶硅片放入烧结炉中，烧结温度控制在300‑900摄氏度，烧结时间为58‑62秒，S7：分类检测、测试、包装，提高了电池的效率，节省了化学原料，边缘无刻边，背面腐蚀均匀，避免气泡和腐蚀不均匀带来的影响，大大降低了破片率，工艺简单，成本低廉。
Description
技术领域
本发明涉及太阳能电池技术领域，具体为一种新型背腐蚀刻边工艺。
背景技术
当前影响光电池大规模应用的主要障碍是它的制造成本太高，在众多发电技术中，太阳能光电仍是花费最高的一种形式，因此发展阳光发电技术的主要目标是通过改进现有的制造工艺，设计新的电池结构，开发新颖电池材料等方式降低制造成本，提高光电转换效率。目前多数公司为了降低成本、差异化经营，都在对高效电池的研发大力投入，PERC电池、MWT电池、HIT、IBC电池等高效电池都是研发的热点。目前传统工艺生产下进行背腐刻蚀时，边缘容易产生药液残留和刻边宽的情况，为此，我们提出一种新型背腐蚀刻边工艺。
发明内容
本发明的目的在于提供一种新型背腐蚀刻边工艺，以解决上述背景技术中提出的问题。
为实现上述目的，本发明提供如下技术方案：一种新型背腐蚀刻边工艺，该新型背腐蚀刻边工艺包括如下步骤：
S1：制绒：对晶硅片表面进行预清洗并干燥，然后采用酸液对晶硅片进行腐蚀，将多晶表面做成凹坑状，得到陷光性能良好的绒面；
S2：扩散：将磷化物掺入晶硅片的表面，并使得磷原子扩散；
S3：背腐蚀：让扩散后的晶硅片带有PN结的那一面朝上，通过滚轮带混合酸的方式去除扩散后晶硅片周边的PN结；
S4：镀减反射膜：在晶硅片的表面采用等离子体增强化学的气相沉积法沉积减反射膜；
S5：丝网印刷金属化：用丝网印刷的方法在晶硅片的背面和正面印上背电极、背电场、正电极，形成有效的点成和引出电极；
S6：烧结：把晶硅片放入烧结炉中，烧结温度控制在300-900摄氏度，烧结时间为58-62秒；
S7：分类检测、测试、包装。
优选的，所述步骤S1中的酸液为硝酸、氢氟酸、硫酸和水的混合液。
优选的，所述步骤S2中的磷化物为三氯氧磷。
优选的，所述步骤S3中的混合酸包括氢氟酸、硝酸和添加剂。
优选的，所述步骤S4中的沉积减反射膜的具体方法为：将经过晶硅片置于石墨舟中，在450-500摄氏度下、含有硅烷与氨气的混合气体氛围中进行沉积减反射膜。
优选的，所述步骤S6中的烧结方法为，采用缓慢升温的方式进行烧结，且升温速率为8-10摄氏度/秒。
与现有技术相比，本发明的有益效果是：该发明提出的一种新型背腐蚀刻边工艺，提高了电池的效率，节省了化学原料，边缘无刻边，背面腐蚀均匀，避免气泡和腐蚀不均匀带来的影响，大大降低了破片率，工艺简单，成本低廉。
附图说明
图1为本发明工艺流程图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
请参阅图1，本发明提供一种技术方案：一种新型背腐蚀刻边工艺，该新型背腐蚀刻边工艺包括如下步骤：
S1：制绒：对晶硅片表面进行预清洗并干燥，然后采用酸液对晶硅片进行腐蚀，将多晶表面做成凹坑状，得到陷光性能良好的绒面，酸液为硝酸、氢氟酸、硫酸和水的混合液；
S2：扩散：将磷化物掺入晶硅片的表面，并使得磷原子扩散，磷化物为三氯氧磷；
S3：背腐蚀：让扩散后的晶硅片带有PN结的那一面朝上，通过滚轮带混合酸的方式去除扩散后晶硅片周边的PN结，混合酸包括氢氟酸、硝酸和添加剂；
S4：镀减反射膜：在晶硅片的表面采用等离子体增强化学的气相沉积法沉积减反射膜，沉积减反射膜的具体方法为：将经过晶硅片置于石墨舟中，在450-500摄氏度下、含有硅烷与氨气的混合气体氛围中进行沉积减反射膜；
S5：丝网印刷金属化：用丝网印刷的方法在晶硅片的背面和正面印上背电极、背电场、正电极，形成有效的点成和引出电极；
S6：烧结：把晶硅片放入烧结炉中，烧结温度控制在300-900摄氏度，烧结时间为58-62秒，烧结方法为，采用缓慢升温的方式进行烧结，且升温速率为8-10摄氏度/秒。
S7：分类检测、测试、包装。
尽管已经示出和描述了本发明的实施例，对于本领域的普通技术人员而言，可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例进行多种变化、修改、替换和变型，本发明的范围由所附权利要求及其等同物限定。
Claims (6)
1.一种新型背腐蚀刻边工艺，其特征在于：该新型背腐蚀刻边工艺包括如下步骤：
S1：制绒：对晶硅片表面进行预清洗并干燥，然后采用酸液对晶硅片进行腐蚀，将多晶表面做成凹坑状，得到陷光性能良好的绒面；
S2：扩散：将磷化物掺入晶硅片的表面，并使得磷原子扩散；
S3：背腐蚀：让扩散后的晶硅片带有PN结的那一面朝上，通过滚轮带混合酸的方式去除扩散后晶硅片周边的PN结；
S4：镀减反射膜：在晶硅片的表面采用等离子体增强化学的气相沉积法沉积减反射膜；
S5：丝网印刷金属化：用丝网印刷的方法在晶硅片的背面和正面印上背电极、背电场、正电极，形成有效的点成和引出电极；
S6：烧结：把晶硅片放入烧结炉中，烧结温度控制在300-900摄氏度，烧结时间为58-62秒；
S7：分类检测、测试、包装。
2.根据权利要求1所述的一种新型背腐蚀刻边工艺，其特征在于：所述步骤S1中的酸液为硝酸、氢氟酸、硫酸和水的混合液。
3.根据权利要求1所述的一种新型背腐蚀刻边工艺，其特征在于：所述步骤S2中的磷化物为三氯氧磷。
4.根据权利要求1所述的一种新型背腐蚀刻边工艺，其特征在于：所述步骤S3中的混合酸包括氢氟酸、硝酸和添加剂。
5.根据权利要求1所述的一种新型背腐蚀刻边工艺，其特征在于：所述步骤S4中的沉积减反射膜的具体方法为：将经过晶硅片置于石墨舟中，在450-500摄氏度下、含有硅烷与氨气的混合气体氛围中进行沉积减反射膜。
6.根据权利要求1所述的一种新型背腐蚀刻边工艺，其特征在于：所述步骤S6中的烧结方法为，采用缓慢升温的方式进行烧结，且升温速率为8-10摄氏度/秒。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810347358.XA CN108711583A (zh) | 2018-04-18 | 2018-04-18 | 一种新型背腐蚀刻边工艺 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810347358.XA CN108711583A (zh) | 2018-04-18 | 2018-04-18 | 一种新型背腐蚀刻边工艺 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108711583A true CN108711583A (zh) | 2018-10-26 |
Family
ID=63866721
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810347358.XA Pending CN108711583A (zh) | 2018-04-18 | 2018-04-18 | 一种新型背腐蚀刻边工艺 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108711583A (zh) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101937944A (zh) * | 2010-08-31 | 2011-01-05 | 上海交通大学 | 双面钝化的晶体硅太阳电池的制备方法 |
| KR101366740B1 (ko) * | 2012-10-25 | 2014-02-26 | 한국생산기술연구원 | 균일성이 확보된 POCl₃ 기반 도핑 공정을 이용한 나노/마이크로 실리콘 복합구조체 태양 전지의 제조 방법 및 이에 따른 태양 전지 |
| WO2015012457A1 (ko) * | 2013-07-25 | 2015-01-29 | 한국생산기술연구원 | 복합구조의 실리콘 웨이퍼, 이의 제조방법 및 이를 이용한 태양 전지 |
| CN104701422A (zh) * | 2015-03-23 | 2015-06-10 | 中建材浚鑫科技股份有限公司 | 一种新型电池背腐蚀提高转换效率的方法 |
-
2018
- 2018-04-18 CN CN201810347358.XA patent/CN108711583A/zh active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101937944A (zh) * | 2010-08-31 | 2011-01-05 | 上海交通大学 | 双面钝化的晶体硅太阳电池的制备方法 |
| KR101366740B1 (ko) * | 2012-10-25 | 2014-02-26 | 한국생산기술연구원 | 균일성이 확보된 POCl₃ 기반 도핑 공정을 이용한 나노/마이크로 실리콘 복합구조체 태양 전지의 제조 방법 및 이에 따른 태양 전지 |
| WO2015012457A1 (ko) * | 2013-07-25 | 2015-01-29 | 한국생산기술연구원 | 복합구조의 실리콘 웨이퍼, 이의 제조방법 및 이를 이용한 태양 전지 |
| CN104701422A (zh) * | 2015-03-23 | 2015-06-10 | 中建材浚鑫科技股份有限公司 | 一种新型电池背腐蚀提高转换效率的方法 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Dullweber et al. | Industrial silicon solar cells applying the passivated emitter and rear cell (PERC) concept—A review | |
| Neuhaus et al. | Industrial silicon wafer solar cells | |
| Xiao et al. | High-efficiency silicon solar cells—materials and devices physics | |
| CN105206711B (zh) | 一种太阳能电池片加工方法 | |
| CN101241952A (zh) | 高效低成本薄片晶体硅太阳能电池片工艺 | |
| CN101414647A (zh) | 一种高效太阳能电池局域深浅结扩散方法 | |
| CA2820034A1 (en) | Solar cell and solar-cell module | |
| CN105280484A (zh) | 一种晶硅高效高方阻电池片的扩散工艺 | |
| CN107799616B (zh) | 一种叉指背接触太阳能电池片及其制作方法 | |
| CN102800757B (zh) | N型太阳能电池及其制造工艺 | |
| CN105355722A (zh) | 一种太阳能电池组件的制造方法 | |
| CN101950779A (zh) | 一种原位制备太阳能电池的方法 | |
| CN103606595B (zh) | 烧结后不合格单晶硅电池片的再利用及其栅线回收方法 | |
| CN105185873B (zh) | 太阳能电池片生产工艺 | |
| Cho et al. | 21%-Efficient n-type rear-junction PERT solar cell with industrial thin 156mm Cz single crystalline silicon wafer | |
| CN101414646A (zh) | 一种薄膜太阳能电池制造新工艺 | |
| CN104362219A (zh) | 一种晶体硅太阳能电池制造工艺 | |
| Moehlecke et al. | Cost-effective thin n-type silicon solar cells with rear emitter | |
| CN104134706A (zh) | 一种石墨烯硅太阳电池及其制作方法 | |
| CN105355710B (zh) | 一种太阳能电池片加工工艺 | |
| CN102723401A (zh) | 选择性发射极晶体硅太阳电池制造方法 | |
| CN204102912U (zh) | 一种石墨烯硅太阳电池 | |
| CN103367526B (zh) | 一种背面局部接触硅太阳电池的制造方法 | |
| CN108711583A (zh) | 一种新型背腐蚀刻边工艺 | |
| CN101339964A (zh) | 晶体硅太阳能电池的选择性扩散方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20181026 |