CN105280484A - 一种晶硅高效高方阻电池片的扩散工艺 - Google Patents
一种晶硅高效高方阻电池片的扩散工艺 Download PDFInfo
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- CN105280484A CN105280484A CN201510302473.1A CN201510302473A CN105280484A CN 105280484 A CN105280484 A CN 105280484A CN 201510302473 A CN201510302473 A CN 201510302473A CN 105280484 A CN105280484 A CN 105280484A
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- 230000008021 deposition Effects 0.000 claims abstract description 20
- 239000002019 doping agent Substances 0.000 claims abstract description 16
- 238000001816 cooling Methods 0.000 claims abstract description 8
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 8
- 230000003647 oxidation Effects 0.000 claims abstract description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 88
- 229910052757 nitrogen Inorganic materials 0.000 claims description 47
- 230000008569 process Effects 0.000 claims description 39
- 238000005516 engineering process Methods 0.000 claims description 26
- 239000007789 gas Substances 0.000 claims description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 16
- 239000001301 oxygen Substances 0.000 claims description 16
- 229910052760 oxygen Inorganic materials 0.000 claims description 16
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 15
- 239000012535 impurity Substances 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 150000002829 nitrogen Chemical class 0.000 description 6
- 238000005247 gettering Methods 0.000 description 5
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- 150000001875 compounds Chemical class 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 3
- 230000009466 transformation Effects 0.000 description 3
- 206010020843 Hyperthermia Diseases 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
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- 229910052698 phosphorus Inorganic materials 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
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CN201510302473.1A CN105280484B (zh) | 2015-06-05 | 2015-06-05 | 一种晶硅高效高方阻电池片的扩散工艺 |
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105720135A (zh) * | 2016-02-24 | 2016-06-29 | 江苏永能光伏科技有限公司 | 一种太阳能电池的降温退火工艺 |
CN106206266A (zh) * | 2016-07-22 | 2016-12-07 | 上海芯导电子科技有限公司 | 一种推阱工艺 |
CN106340567A (zh) * | 2016-08-31 | 2017-01-18 | 横店集团东磁股份有限公司 | 一种应用于太阳能电池提升开压的两步通源工艺 |
CN106783561A (zh) * | 2016-12-30 | 2017-05-31 | 中建材浚鑫科技股份有限公司 | 一种降低硅片体内复合的新型扩散工艺 |
CN107331731A (zh) * | 2017-07-04 | 2017-11-07 | 合肥市大卓电力有限责任公司 | 一种太阳能电池晶体硅片磷扩散方法 |
CN108389933A (zh) * | 2018-03-05 | 2018-08-10 | 通威太阳能(成都)有限公司 | 一种高浓度磷硅玻璃且高方阻的扩散方法 |
CN109786511A (zh) * | 2019-03-22 | 2019-05-21 | 韩华新能源(启东)有限公司 | 一种适用于选择性发射极的扩散方法 |
CN110164758A (zh) * | 2019-05-22 | 2019-08-23 | 通威太阳能(合肥)有限公司 | 一种可降低常规多晶电池漏电值的扩散工艺 |
WO2023179021A1 (zh) | 2022-03-24 | 2023-09-28 | 横店集团东磁股份有限公司 | 一种浅结扩散发射极的晶硅太阳能电池的制备方法及其应用 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102383198A (zh) * | 2011-10-12 | 2012-03-21 | 润峰电力有限公司 | 一种晶硅电池的三步变温扩散工艺 |
CN103681976A (zh) * | 2013-12-27 | 2014-03-26 | 百力达太阳能股份有限公司 | 一种高效低成本太阳电池扩散工艺 |
CN103943719A (zh) * | 2014-03-25 | 2014-07-23 | 晶澳(扬州)太阳能科技有限公司 | 一种采用预氧结合低温-高温-低温的变温扩散方式对磷掺杂浓度进行控制的方法 |
CN104269456A (zh) * | 2014-09-05 | 2015-01-07 | 浙江晶科能源有限公司 | 一种新型太阳电池p扩散吸杂的工艺 |
US20150132931A1 (en) * | 2013-07-01 | 2015-05-14 | Solexel, Inc. | High-throughput thermal processing methods for producing high-efficiency crystalline silicon solar cells |
-
2015
- 2015-06-05 CN CN201510302473.1A patent/CN105280484B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102383198A (zh) * | 2011-10-12 | 2012-03-21 | 润峰电力有限公司 | 一种晶硅电池的三步变温扩散工艺 |
US20150132931A1 (en) * | 2013-07-01 | 2015-05-14 | Solexel, Inc. | High-throughput thermal processing methods for producing high-efficiency crystalline silicon solar cells |
CN103681976A (zh) * | 2013-12-27 | 2014-03-26 | 百力达太阳能股份有限公司 | 一种高效低成本太阳电池扩散工艺 |
CN103943719A (zh) * | 2014-03-25 | 2014-07-23 | 晶澳(扬州)太阳能科技有限公司 | 一种采用预氧结合低温-高温-低温的变温扩散方式对磷掺杂浓度进行控制的方法 |
CN104269456A (zh) * | 2014-09-05 | 2015-01-07 | 浙江晶科能源有限公司 | 一种新型太阳电池p扩散吸杂的工艺 |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105720135A (zh) * | 2016-02-24 | 2016-06-29 | 江苏永能光伏科技有限公司 | 一种太阳能电池的降温退火工艺 |
CN106206266A (zh) * | 2016-07-22 | 2016-12-07 | 上海芯导电子科技有限公司 | 一种推阱工艺 |
CN106206266B (zh) * | 2016-07-22 | 2020-02-04 | 上海芯导电子科技有限公司 | 一种推阱工艺 |
CN106340567A (zh) * | 2016-08-31 | 2017-01-18 | 横店集团东磁股份有限公司 | 一种应用于太阳能电池提升开压的两步通源工艺 |
CN106783561A (zh) * | 2016-12-30 | 2017-05-31 | 中建材浚鑫科技股份有限公司 | 一种降低硅片体内复合的新型扩散工艺 |
CN107331731A (zh) * | 2017-07-04 | 2017-11-07 | 合肥市大卓电力有限责任公司 | 一种太阳能电池晶体硅片磷扩散方法 |
CN108389933A (zh) * | 2018-03-05 | 2018-08-10 | 通威太阳能(成都)有限公司 | 一种高浓度磷硅玻璃且高方阻的扩散方法 |
CN109786511A (zh) * | 2019-03-22 | 2019-05-21 | 韩华新能源(启东)有限公司 | 一种适用于选择性发射极的扩散方法 |
CN109786511B (zh) * | 2019-03-22 | 2021-04-02 | 韩华新能源(启东)有限公司 | 一种适用于选择性发射极的扩散方法 |
CN110164758A (zh) * | 2019-05-22 | 2019-08-23 | 通威太阳能(合肥)有限公司 | 一种可降低常规多晶电池漏电值的扩散工艺 |
WO2023179021A1 (zh) | 2022-03-24 | 2023-09-28 | 横店集团东磁股份有限公司 | 一种浅结扩散发射极的晶硅太阳能电池的制备方法及其应用 |
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Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Applicant after: trina solar Ltd. Address before: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Applicant before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Applicant after: TRINASOLAR Co.,Ltd. Address before: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Applicant before: trina solar Ltd. |
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Effective date of registration: 20220819 Address after: 213031 Tianhe PV Industrial Park No. 2, Xinbei District, Changzhou, Jiangsu Patentee after: TRINASOLAR Co.,Ltd. Patentee after: Trinasolar Technology (Yancheng) Co.,Ltd. Address before: 213031 Tianhe PV Industrial Park No. 2, Xinbei District, Changzhou, Jiangsu Patentee before: TRINASOLAR Co.,Ltd. |