CN108709646A - A kind of temperature detection sample circuit - Google Patents
A kind of temperature detection sample circuit Download PDFInfo
- Publication number
- CN108709646A CN108709646A CN201810895437.4A CN201810895437A CN108709646A CN 108709646 A CN108709646 A CN 108709646A CN 201810895437 A CN201810895437 A CN 201810895437A CN 108709646 A CN108709646 A CN 108709646A
- Authority
- CN
- China
- Prior art keywords
- resistor
- temperature
- operational amplifier
- reference voltage
- triode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001514 detection method Methods 0.000 title claims abstract description 43
- 238000005070 sampling Methods 0.000 claims abstract description 61
- 230000003321 amplification Effects 0.000 claims abstract description 11
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 11
- 230000003139 buffering effect Effects 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 8
- 230000008859 change Effects 0.000 description 6
- 230000009471 action Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- NAWXUBYGYWOOIX-SFHVURJKSA-N (2s)-2-[[4-[2-(2,4-diaminoquinazolin-6-yl)ethyl]benzoyl]amino]-4-methylidenepentanedioic acid Chemical compound C1=CC2=NC(N)=NC(N)=C2C=C1CCC1=CC=C(C(=O)N[C@@H](CC(=C)C(O)=O)C(O)=O)C=C1 NAWXUBYGYWOOIX-SFHVURJKSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K1/00—Details of thermometers not specially adapted for particular types of thermometer
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/44—Modifications of instruments for temperature compensation
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
Abstract
The invention discloses a kind of temperature detection sample circuits, including：Temperature reference voltages acquisition module, buffer module, amplification module and comparison module；Wherein, the temperature reference voltages acquisition module is for exporting first via temperature reference voltages and the second tunnel temperature reference voltages；The buffer module is used to control the stability of the first via temperature reference voltages；The amplification module is used to the first via temperature reference voltages and second tunnel temperature reference voltages being amplified processing, and exports and the relevant temperature sampling voltage of the first via temperature reference voltages；The comparison module is used to remove the first via temperature reference voltages according to the temperature sampling voltage and reference voltage, and exports target temperature sampled voltage.The temperature detection sample circuit is unrelated with manufacture craft variation, and temperature detection result accuracy is high.
Description
Technical Field
The invention relates to the technical field of semiconductor integrated circuits, in particular to a temperature detection sampling circuit.
Background
At present, various electronic devices are equipped with speaker devices, and the reliability of speakers is more and more emphasized in the consumer electronics field, especially in the application field of mobile terminals such as mobile phones. During the working process of the loudspeaker, impedance data of the loudspeaker need to be transmitted to the processor in real time, and the processor controls the amplitude of music according to the change of impedance, so that the loudspeaker works in a reliable range, and the loudspeaker is protected.
In the application of a class D audio power amplifier, voltage and current are detected at an output stage of the class D audio power amplifier, and a common current detection method is to connect a metal resistor of several tens of milliohms in series with the output stage, convert the current into voltage, and obtain a current value flowing through a loudspeaker through an analog-to-digital converter. However, the metal resistor has a large temperature coefficient, and as the temperature of the chip rises, the resistance value of the metal resistor becomes large, and the voltage drop on the resistor also becomes large, so that the current detection value of the horn is large, and the normal working range of the horn is further influenced.
Therefore, the class D audio power amplifier needs to detect the temperature of the chip, and eliminate the influence of temperature change on the detection of the horn current.
However, in the prior art, the error of temperature detection of the class D audio power amplifier is large, and changes along with the fluctuation of the manufacturing process, which causes deviation in the temperature sampling process, so that the temperature detection result has a large error.
Disclosure of Invention
In order to solve the above problems, the present invention provides a temperature detection sampling circuit, which is independent of the manufacturing process variation and has high accuracy of the temperature detection result.
In order to achieve the purpose, the invention provides the following technical scheme:
a temperature sensing sampling circuit, the temperature sensing sampling circuit comprising: the temperature reference voltage acquisition module, the buffer module, the amplification module and the comparison module;
the temperature reference voltage acquisition module is used for outputting a first path of temperature reference voltage and a second path of temperature reference voltage;
the buffer module is used for controlling the stability of the first path of temperature reference voltage;
the amplifying module is used for amplifying the first path of temperature reference voltage and the second path of temperature reference voltage and outputting temperature sampling voltage related to the first path of temperature reference voltage;
the comparison module is used for removing the first path of temperature reference voltage according to the temperature sampling voltage and the reference voltage and outputting a target temperature sampling voltage.
Preferably, in the temperature detection sampling circuit, the temperature reference voltage acquisition module includes: the power supply comprises a first current source, a second current source, a first triode and a second triode;
one end of the first current source is connected with an emitting electrode of the first triode, and the other end of the first current source is connected with a voltage input end;
the base electrode of the first triode is connected with the collector electrode of the first triode and then is grounded;
one end of the second current source is connected with an emitting electrode of the second triode, and the other end of the second current source is connected with the voltage input end;
and the base electrode of the second triode is connected with the collector electrode of the second triode and then is grounded.
Preferably, in the temperature detection sampling circuit, a current value of the second current source is 10 times a current value of the first current source.
Preferably, in the temperature detection sampling circuit, an area of the first transistor is the same as an area of the second transistor.
Preferably, in the temperature detection sampling circuit, the buffer module includes: a first operational amplifier;
the non-inverting input end of the first operational amplifier is connected with the emitter of the first triode, and the inverting input end of the first operational amplifier is connected with the output end of the first operational amplifier.
Preferably, in the temperature detection sampling circuit, the amplifying module includes: the first operational amplifier, the first resistor and the second resistor;
the non-inverting input end of the second operational amplifier is connected with the emitter of the second triode, and the inverting input end of the second operational amplifier is connected with one end of the first resistor;
the other end of the first resistor is connected with the output end of the first operational amplifier;
one end of the second resistor is connected with the inverting input end of the second operational amplifier, and the other end of the second resistor is connected with the output end of the second operational amplifier;
and the output end of the second operational amplifier is used for outputting the temperature sampling voltage.
Preferably, in the temperature detection sampling circuit, the resistance value of the second resistor is 11 times larger than the resistance value of the first resistor.
Preferably, in the temperature detection sampling circuit, the comparison module includes: the first operational amplifier, the first resistor, the second resistor, the third resistor, the fourth resistor, the fifth resistor and the sixth resistor;
one end of the third resistor is connected with the output end of the second operational amplifier, and the other end of the third resistor is connected with the non-inverting input end of the third operational amplifier;
one end of the fourth resistor is connected with the non-inverting input end of the third operational amplifier, and the other end of the fourth resistor is connected with the ground;
one end of the fifth resistor is connected with the input end of the reference voltage, and the other end of the fifth resistor is connected with the inverting input end of the third operational amplifier;
one end of the sixth resistor is connected with the inverting input end of the third operational amplifier, and the other end of the sixth resistor is connected with the output end of the third operational amplifier;
and the output end of the third operational amplifier is used for outputting the target temperature sampling voltage.
Preferably, in the temperature detection sampling circuit, a resistance value of the third resistor, a resistance value of the fourth resistor, a resistance value of the fifth resistor, and a resistance value of the sixth resistor are the same.
As can be seen from the above description, the temperature detection sampling circuit provided by the present invention includes: the temperature reference voltage acquisition module, the buffer module, the amplification module and the comparison module; the temperature reference voltage acquisition module is used for outputting a first path of temperature reference voltage and a second path of temperature reference voltage; the buffer module is used for controlling the stability of the first path of temperature reference voltage; the amplifying module is used for amplifying the first path of temperature reference voltage and the second path of temperature reference voltage and outputting temperature sampling voltage related to the first path of temperature reference voltage; the comparison module is used for removing the first path of temperature reference voltage according to the temperature sampling voltage and the reference voltage and outputting a target temperature sampling voltage.
According to the above description, the target temperature sampling voltage finally output by the temperature detection sampling circuit has no relation with the first path of temperature reference voltage and the second path of temperature reference voltage output by the temperature reference voltage acquisition module, so that the influence of the process change of the temperature detection device in the temperature reference voltage acquisition module on the target temperature sampling voltage is eliminated, and the accuracy of the temperature detection result is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a temperature detection sampling circuit according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a temperature detection sampling circuit according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a temperature detection sampling circuit according to an embodiment of the present invention, where the temperature detection sampling circuit includes: the temperature reference voltage acquisition module 11, the buffer module 12, the amplification module 13 and the comparison module 14.
The temperature reference voltage acquisition module 11 is configured to output a first path of temperature reference voltage and a second path of temperature reference voltage.
The buffer module 12 is configured to control stability of the first path of temperature reference voltage.
The amplifying module 13 is configured to amplify the first path of temperature reference voltage and the second path of temperature reference voltage, and output a temperature sampling voltage related to the first path of temperature reference voltage.
The comparison module 14 is configured to remove the first path of temperature reference voltage according to the temperature sampling voltage and the reference voltage, and output a target temperature sampling voltage.
Specifically, a first output end of the temperature reference voltage acquisition module 11 is connected to a first input end of the amplification module 13, a second output end of the temperature reference voltage acquisition module 11 is connected to an input end of the buffer module 12, and an output end of the buffer module 12 is connected to a second input end of the amplification module 13.
The temperature reference voltage acquisition module 11 inputs the second temperature reference voltage to a first input end of the amplification module 13 through a first output end thereof.
The temperature reference voltage acquisition module 11 inputs the first temperature reference voltage to a second input end of the amplification module 13 through a second output end of the temperature reference voltage acquisition module 12.
The output end of the amplifying module 13 is connected to the first input end of the comparing module 14, and the second input end of the comparing module 14 is connected to the input end of the reference voltage.
According to the above description, the target temperature sampling voltage finally output by the temperature detection sampling circuit has no relation with the first path of temperature reference voltage and the second path of temperature reference voltage output by the temperature reference voltage acquisition module, so that the influence of the process change of the temperature detection device in the temperature reference voltage acquisition module on the target temperature sampling voltage is eliminated, and the accuracy of the temperature detection result is improved.
Further, as shown in fig. 2, the temperature reference voltage acquisition module 11 includes: the circuit comprises a first current source I1, a second current source I2, a first triode Q1 and a second triode Q2.
One end of the first current source I1 is connected to the emitter of the first transistor Q1, and the other end of the first current source I1 is connected to the voltage input terminal Vcc.
The base of the first triode Q1 is connected with the collector of the first triode Q1 and then is grounded.
One end of the second current source I2 is connected to the emitter of the second transistor Q2, and the other end of the second current source I2 is connected to the voltage input terminal Vcc.
The base of the second triode Q2 is connected with the collector of the second triode Q2 and then is connected with the ground.
Specifically, a bipolar first triode Q1 is used to generate a base-emitter junction voltage thereof, i.e. a first path temperature reference voltage VBE1A bipolar second triode Q2 is used to generate a base-emitter junction voltage thereof, namely a second path of temperature reference voltage VBE2。
Wherein,
wherein, VTRepresents a thermal voltage Ic1Representing the collector current, I, of the first transistor Q1s1Indicating the saturation current of the first transistor Q1.
In the same way, the method for preparing the composite material,
wherein, VTRepresents a thermal voltage Ic2Representing the collector current, I, of the second transistor Q2s2Indicating the saturation current of the second transistor Q2.
As can be seen from the formulas (1) and (2), since Ic1、Is1、Ic2And Is2Are all temperature dependent, therefore VBE1And VBE2The change with temperature is not linear, if V isBE1And VBE2As a result of the temperature detection, the error of the result is large, and therefore, in the embodiment of the invention, V is subsequently pairedBE1And VBE2And then processing is carried out to improve the accuracy of the final temperature detection result.
In addition, the process changes of the first triode Q1 and the second triode Q2 of the temperature detection device in the temperature reference voltage acquisition module 11 may affect the target temperature sampling voltage.
Further, the current value emitted by the second current source I2 is 10 times the current value emitted by the first current source I1.
That is, 10Ic1＝Ic2(3)
Further, the area of the first transistor Q1 is the same as the area of the second transistor Q2.
That is, Is1＝Is2(4)
Further, as shown in fig. 2, the buffer module 12 includes: a first operational amplifier 21.
The non-inverting input terminal of the first operational amplifier 21 is connected to the emitter of the first transistor Q1, and the inverting input terminal of the first operational amplifier 21 is connected to the output terminal of the first operational amplifier 21.
Specifically, the first operational amplifier 21 plays a role of buffering, so that the current generated by the first current source I1 flows into the first triode Q1 completely, so as to improve the stability of the first path of temperature reference voltage.
Further, as shown in fig. 2, the amplifying module 13 includes: a second operational amplifier 22, a first resistor R1, and a second resistor R2.
The non-inverting input terminal of the second operational amplifier 22 is connected to the emitter of the second transistor Q2, and the inverting input terminal of the second operational amplifier 22 is connected to one end of the first resistor R1.
The other end of the first resistor R1 is connected to the output terminal of the first operational amplifier 21.
One end of the second resistor R2 is connected to the inverting input terminal of the second operational amplifier 22, and the other end of the second resistor R2 is connected to the output terminal of the second operational amplifier 22.
The output end of the second operational amplifier 22 is used for outputting the temperature sampling voltage.
Specifically, the resistance of the second resistor R2 is 11 times the resistance of the first resistor R1.
That is, R2＝11R1(6)
The "virtual short" characteristic of the operational amplifier is known as follows:
wherein, VTSRepresenting the temperature sample voltage.
Substituting equation (6) into equation (7) yields:
equation (8) is simplified to yield: vTS＝12VBE2-11VBE1(9)
Substituting the formula (1), the formula (2), the formula (3) and the formula (4) into the formula (9) can obtain:
the formula (10) can be collated:
i.e. VTS＝VTLn(1012)+VBE1(12)
Finally, V is obtainedTS＝27.63VT+VBE1(13)
As can be seen from the above description, the temperature sampling voltage VTSOr with the first temperature reference voltage VBE1In this case, the temperature detection result is still erroneous.
Further, as shown in fig. 2, the comparing module 14 includes: a third operational amplifier 23, a third resistor R3, a fourth resistor R4, a fifth resistor R5, and a sixth resistor R6.
One end of the third resistor R3 is connected to the output end of the second operational amplifier 22, and the other end of the third resistor R3 is connected to the non-inverting input end of the third operational amplifier 23.
One end of the fourth resistor R4 is connected to the non-inverting input terminal of the third operational amplifier 23, and the other end of the fourth resistor R4 is connected to ground.
One end of the fifth resistor R5 is connected to the input terminal of the reference voltage, and the other end of the fifth resistor R5 is connected to the inverting input terminal of the third operational amplifier 23.
One end of the sixth resistor R6 is connected to the inverting input terminal of the third operational amplifier 23, and the other end of the sixth resistor R6 is connected to the output terminal of the third operational amplifier 23.
The output end of the third operational amplifier 23 is used for outputting the target temperature sampling voltage.
The resistance of the third resistor R3, the resistance of the fourth resistor R4, the resistance of the fifth resistor R5 and the resistance of the sixth resistor R6 are the same.
Specifically, the reference voltage V is set according to the process characteristics of the first transistor Q1BGComprises the following steps:
VBG＝22.46VT+VBE1(14)
substituting equation (14) into equation (13) yields:
VTS＝5.17VT+VBG(15)
then, the output voltage of the third operational amplifier 23, i.e., the target temperature sampling voltage VOUTComprises the following steps:
VOUT＝VTS-VBG＝5.17VT(16)
due to thermal voltage VTHas positive temperature coefficient, and is represented as:
then it is determined that,
thus, the target temperature sampling voltage VOUTOc 0.45 mV/deg.C, and has good linear relation with temperature variation, and compared with the temperature sampling voltage VTSIn other words, the target temperature at this time is sampled by the voltage VOUTAnd a first temperature reference voltage VBE1And a second temperature reference voltage VBE2And a reference voltage VBGAll have nothing to do, that is, the finally output target temperature sampling voltage VOUTThe process changes of the first triode and the second triode of the temperature detection device in the temperature reference voltage acquisition module are not changed.
Therefore, the temperature detection sampling circuit provided by the invention is irrelevant to process change, and the accuracy of a temperature detection result is greatly improved.
It should be noted that, in the present specification, the embodiments are all described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments may be referred to each other.
It is further noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that an article or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such article or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in an article or device that comprises the element.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (9)
1. A temperature detection sampling circuit, comprising: the temperature reference voltage acquisition module, the buffer module, the amplification module and the comparison module;
the temperature reference voltage acquisition module is used for outputting a first path of temperature reference voltage and a second path of temperature reference voltage;
the buffer module is used for controlling the stability of the first path of temperature reference voltage;
the amplifying module is used for amplifying the first path of temperature reference voltage and the second path of temperature reference voltage and outputting temperature sampling voltage related to the first path of temperature reference voltage;
the comparison module is used for removing the first path of temperature reference voltage according to the temperature sampling voltage and the reference voltage and outputting a target temperature sampling voltage.
2. The temperature detection sampling circuit of claim 1, wherein the temperature reference voltage acquisition module comprises: the power supply comprises a first current source, a second current source, a first triode and a second triode;
one end of the first current source is connected with an emitting electrode of the first triode, and the other end of the first current source is connected with a voltage input end;
the base electrode of the first triode is connected with the collector electrode of the first triode and then is grounded;
one end of the second current source is connected with an emitting electrode of the second triode, and the other end of the second current source is connected with the voltage input end;
and the base electrode of the second triode is connected with the collector electrode of the second triode and then is grounded.
3. The temperature sensing sampling circuit of claim 2, wherein the second current source emits a current value that is 10 times the current value emitted by the first current source.
4. The temperature-sensing sampling circuit of claim 2, wherein the area of the first transistor is the same as the area of the second transistor.
5. The temperature sensing sampling circuit of claim 2, wherein the buffering module comprises: a first operational amplifier;
the non-inverting input end of the first operational amplifier is connected with the emitter of the first triode, and the inverting input end of the first operational amplifier is connected with the output end of the first operational amplifier.
6. The temperature sensing sampling circuit of claim 3, wherein the amplification module comprises: the first operational amplifier, the first resistor and the second resistor;
the non-inverting input end of the second operational amplifier is connected with the emitter of the second triode, and the inverting input end of the second operational amplifier is connected with one end of the first resistor;
the other end of the first resistor is connected with the output end of the first operational amplifier;
one end of the second resistor is connected with the inverting input end of the second operational amplifier, and the other end of the second resistor is connected with the output end of the second operational amplifier;
and the output end of the second operational amplifier is used for outputting the temperature sampling voltage.
7. The temperature detection sampling circuit according to claim 6, wherein the resistance value of the second resistor is 11 times larger than the resistance value of the first resistor.
8. The temperature sensing sampling circuit of claim 6, wherein the comparison module comprises: the first operational amplifier, the first resistor, the second resistor, the third resistor, the fourth resistor, the fifth resistor and the sixth resistor;
one end of the third resistor is connected with the output end of the second operational amplifier, and the other end of the third resistor is connected with the non-inverting input end of the third operational amplifier;
one end of the fourth resistor is connected with the non-inverting input end of the third operational amplifier, and the other end of the fourth resistor is connected with the ground;
one end of the fifth resistor is connected with the input end of the reference voltage, and the other end of the fifth resistor is connected with the inverting input end of the third operational amplifier;
one end of the sixth resistor is connected with the inverting input end of the third operational amplifier, and the other end of the sixth resistor is connected with the output end of the third operational amplifier;
and the output end of the third operational amplifier is used for outputting the target temperature sampling voltage.
9. The temperature detection sampling circuit according to claim 8, wherein the resistance of the third resistor, the resistance of the fourth resistor, the resistance of the fifth resistor, and the resistance of the sixth resistor are the same.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810895437.4A CN108709646B (en) | 2018-08-08 | 2018-08-08 | Temperature detection sampling circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810895437.4A CN108709646B (en) | 2018-08-08 | 2018-08-08 | Temperature detection sampling circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108709646A true CN108709646A (en) | 2018-10-26 |
| CN108709646B CN108709646B (en) | 2024-06-04 |
Family
ID=63875690
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810895437.4A Active CN108709646B (en) | 2018-08-08 | 2018-08-08 | Temperature detection sampling circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108709646B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110068394A (en) * | 2019-04-08 | 2019-07-30 | 上海艾为电子技术股份有限公司 | A kind of chip temperature detection circuit and audio-frequency power amplifier |
| CN112013985A (en) * | 2019-05-31 | 2020-12-01 | 深圳迈瑞生物医疗电子股份有限公司 | Temperature detection device and temperature detection method |
| CN114295885A (en) * | 2021-12-29 | 2022-04-08 | 东莞市长工微电子有限公司 | Current detection circuit and driving device |
Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10038693A1 (en) * | 2000-07-28 | 2002-02-14 | Infineon Technologies Ag | Temperature sensor for high frequency digital signal amplifier, has control circuit which calculates difference between voltages of FETs which are operated at different operating points by current generator |
| JP2006242894A (en) * | 2005-03-07 | 2006-09-14 | Ricoh Co Ltd | Temperature-sensing circuit |
| CN1991319A (en) * | 2005-12-28 | 2007-07-04 | Tdk株式会社 | Circuit and method for temperature detection |
| JP2007187559A (en) * | 2006-01-13 | 2007-07-26 | Ricoh Co Ltd | Temperature detection circuit |
| TW200807866A (en) * | 2006-07-26 | 2008-02-01 | Han-Pang Huang | Circuit for combining voltage reference and temperature sensor |
| JP2008058298A (en) * | 2006-08-02 | 2008-03-13 | Nec Electronics Corp | Temperature detection circuit, and semiconductor device |
| US20090010301A1 (en) * | 2007-07-02 | 2009-01-08 | Takeshi Nagahisa | Temperature detection circuit |
| KR20090010407A (en) * | 2007-07-23 | 2009-01-30 | 삼성전자주식회사 | Voltage divider and internal supply voltage generation circuit |
| JP2009044002A (en) * | 2007-08-09 | 2009-02-26 | Ricoh Co Ltd | Semiconductor device, and temperature-sensing device using same |
| CN101387557A (en) * | 2007-09-10 | 2009-03-18 | 株式会社理光 | Temperature sensing circuit and electronic device using same |
| CN101762336A (en) * | 2009-11-24 | 2010-06-30 | 上海贝岭股份有限公司 | Current temperature sensor circuit for CMOS switch and control method thereof |
| CN102338668A (en) * | 2010-07-27 | 2012-02-01 | 深圳艾科创新微电子有限公司 | Temperature detection circuit |
| CN107888148A (en) * | 2017-12-27 | 2018-04-06 | 上海艾为电子技术股份有限公司 | A kind of temperature drift compensating circuit and RC oscillator |
| CN208833381U (en) * | 2018-08-08 | 2019-05-07 | 上海艾为电子技术股份有限公司 | A kind of temperature detection sample circuit |
-
2018
- 2018-08-08 CN CN201810895437.4A patent/CN108709646B/en active Active
Patent Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10038693A1 (en) * | 2000-07-28 | 2002-02-14 | Infineon Technologies Ag | Temperature sensor for high frequency digital signal amplifier, has control circuit which calculates difference between voltages of FETs which are operated at different operating points by current generator |
| JP2006242894A (en) * | 2005-03-07 | 2006-09-14 | Ricoh Co Ltd | Temperature-sensing circuit |
| CN1991319A (en) * | 2005-12-28 | 2007-07-04 | Tdk株式会社 | Circuit and method for temperature detection |
| JP2007187559A (en) * | 2006-01-13 | 2007-07-26 | Ricoh Co Ltd | Temperature detection circuit |
| TW200807866A (en) * | 2006-07-26 | 2008-02-01 | Han-Pang Huang | Circuit for combining voltage reference and temperature sensor |
| JP2008058298A (en) * | 2006-08-02 | 2008-03-13 | Nec Electronics Corp | Temperature detection circuit, and semiconductor device |
| US20090010301A1 (en) * | 2007-07-02 | 2009-01-08 | Takeshi Nagahisa | Temperature detection circuit |
| KR20090010407A (en) * | 2007-07-23 | 2009-01-30 | 삼성전자주식회사 | Voltage divider and internal supply voltage generation circuit |
| JP2009044002A (en) * | 2007-08-09 | 2009-02-26 | Ricoh Co Ltd | Semiconductor device, and temperature-sensing device using same |
| CN101387557A (en) * | 2007-09-10 | 2009-03-18 | 株式会社理光 | Temperature sensing circuit and electronic device using same |
| CN101762336A (en) * | 2009-11-24 | 2010-06-30 | 上海贝岭股份有限公司 | Current temperature sensor circuit for CMOS switch and control method thereof |
| CN102338668A (en) * | 2010-07-27 | 2012-02-01 | 深圳艾科创新微电子有限公司 | Temperature detection circuit |
| CN107888148A (en) * | 2017-12-27 | 2018-04-06 | 上海艾为电子技术股份有限公司 | A kind of temperature drift compensating circuit and RC oscillator |
| CN208833381U (en) * | 2018-08-08 | 2019-05-07 | 上海艾为电子技术股份有限公司 | A kind of temperature detection sample circuit |
Non-Patent Citations (1)
| Title |
|---|
| 王涵阳: "" 基于CMOS工艺的数字温度传感器的研究"", 《中国优秀硕士学位论文全文数据库 信息科技辑》, no. 04, 15 April 2018 (2018-04-15), pages 140 - 426 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110068394A (en) * | 2019-04-08 | 2019-07-30 | 上海艾为电子技术股份有限公司 | A kind of chip temperature detection circuit and audio-frequency power amplifier |
| CN112013985A (en) * | 2019-05-31 | 2020-12-01 | 深圳迈瑞生物医疗电子股份有限公司 | Temperature detection device and temperature detection method |
| CN114295885A (en) * | 2021-12-29 | 2022-04-08 | 东莞市长工微电子有限公司 | Current detection circuit and driving device |
| CN114295885B (en) * | 2021-12-29 | 2023-10-13 | 东莞市长工微电子有限公司 | Current detection circuit and driving device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108709646B (en) | 2024-06-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109084911B (en) | Temperature detection sampling circuit and audio amplifier chip | |
| US6492845B1 (en) | Low voltage current sense amplifier circuit | |
| US9483069B2 (en) | Circuit for generating bias current | |
| JP5836074B2 (en) | Temperature detection circuit and adjustment method thereof | |
| CN108709646A (en) | A kind of temperature detection sample circuit | |
| JPH06188657A (en) | Circuit for connecting exponential function step to automatic gain control circuit, automatic gain control circuit and temperature compensation circuit | |
| CN208833381U (en) | A kind of temperature detection sample circuit | |
| US20100237926A1 (en) | Voltage generating circuit | |
| JPS6254242B2 (en) | ||
| CN208672186U (en) | Temperature detection sample circuit and audio-frequency amplifier chip | |
| JP2000074747A (en) | Method and device for detecting temperature and photoelectric conversion circuit | |
| TWI529376B (en) | Thermocouple amplifier circuit and temperature monitoring system | |
| JPH11258065A (en) | Temperature detecting circuit | |
| US4008442A (en) | Signal amplifier circuit with a field effect transistor having current unsaturated triode vacuum tube characteristics | |
| US7551005B2 (en) | Output circuit and current source circuit used in the same | |
| CN113779916A (en) | Charge sensitive preamplifier structure and design method | |
| JP4839572B2 (en) | Input circuit | |
| JP6758029B2 (en) | Semiconductor device | |
| JP4970200B2 (en) | Voltage detection circuit | |
| CN112880858B (en) | Sampling circuit, temperature detection circuit and electrical equipment | |
| CN211046880U (en) | Split type amplification detection circuit of ultrasonic liquid level sensor | |
| JP4586708B2 (en) | Differential amplifier | |
| JPS6343923B2 (en) | ||
| JP6830825B2 (en) | Current detection circuit | |
| JP3263539B2 (en) | Bias circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: Room 1201, No.2, Lane 908, Xiuwen Road, Minhang District, Shanghai, 201199 Patentee after: SHANGHAI AWINIC TECHNOLOGY Co.,Ltd. Country or region after: China Address before: Room 303-39, building 33, 680 Guiping Road, Xuhui District, Shanghai 200233 Patentee before: SHANGHAI AWINIC TECHNOLOGY Co.,Ltd. Country or region before: China |