CN108709646B - Temperature detection sampling circuit - Google Patents
Temperature detection sampling circuit Download PDFInfo
- Publication number
- CN108709646B CN108709646B CN201810895437.4A CN201810895437A CN108709646B CN 108709646 B CN108709646 B CN 108709646B CN 201810895437 A CN201810895437 A CN 201810895437A CN 108709646 B CN108709646 B CN 108709646B
- Authority
- CN
- China
- Prior art keywords
- temperature
- resistor
- reference voltage
- operational amplifier
- path
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000005070 sampling Methods 0.000 title claims abstract description 66
- 238000001514 detection method Methods 0.000 title claims abstract description 41
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 230000009471 action Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- NAWXUBYGYWOOIX-SFHVURJKSA-N (2s)-2-[[4-[2-(2,4-diaminoquinazolin-6-yl)ethyl]benzoyl]amino]-4-methylidenepentanedioic acid Chemical compound C1=CC2=NC(N)=NC(N)=C2C=C1CCC1=CC=C(C(=O)N[C@@H](CC(=C)C(O)=O)C(O)=O)C=C1 NAWXUBYGYWOOIX-SFHVURJKSA-N 0.000 description 1
- 239000010752 BS 2869 Class D Substances 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K1/00—Details of thermometers not specially adapted for particular types of thermometer
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/44—Modifications of instruments for temperature compensation
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
Abstract
The invention discloses a temperature detection sampling circuit, which comprises: the temperature reference voltage acquisition module, the buffer module, the amplifying module and the comparison module; the temperature reference voltage acquisition module is used for outputting a first path of temperature reference voltage and a second path of temperature reference voltage; the buffer module is used for controlling the stability of the first path of temperature reference voltage; the amplifying module is used for amplifying the first path of temperature reference voltage and the second path of temperature reference voltage and outputting temperature sampling voltage related to the first path of temperature reference voltage; the comparison module is used for removing the first path of temperature reference voltage according to the temperature sampling voltage and the reference voltage and outputting a target temperature sampling voltage. The temperature detection sampling circuit is irrelevant to manufacturing process variation, and the accuracy of temperature detection results is high.
Description
Technical Field
The present invention relates to the field of semiconductor integrated circuits, and more particularly, to a temperature detection sampling circuit.
Background
At present, various electronic devices are equipped with speaker devices, and the reliability of the speaker is increasingly emphasized in the field of consumer electronics, especially in the field of mobile terminal applications such as mobile phones. In the loudspeaker working process, the impedance data of the loudspeaker is required to be transmitted to the processor in real time, and the processor controls the amplitude of music according to the change of the impedance, so that the loudspeaker works in a reliable range, and the loudspeaker is protected.
In the application of a class D audio power amplifier, voltage and current are detected at an output stage of the class D audio power amplifier, and a common current detection mode is to connect a metal resistor of several tens of milliohms in series on the output stage, convert the current into voltage, and then pass through an analog-to-digital converter to obtain a current value flowing through a loudspeaker. However, the metal resistor has a larger temperature coefficient, and the resistance value of the metal resistor is increased along with the increase of the chip temperature, so that the voltage drop on the resistor is also increased, the current detection value of the loudspeaker is increased, and the normal working range of the loudspeaker is further affected.
Therefore, the class D audio power amplifier needs to detect the temperature of the chip, eliminating the influence of temperature variation on the detection of the horn current.
However, the error of the prior art on the temperature detection of the class-D audio power amplifier is larger, and the error can change along with the fluctuation of the manufacturing process, so that deviation occurs in the temperature sampling process, and the temperature detection result has larger error.
Disclosure of Invention
In order to solve the above problems, the present invention provides a temperature detection sampling circuit, which is independent of manufacturing process variation and has high accuracy of temperature detection results.
In order to achieve the above purpose, the present invention provides the following technical solutions:
A temperature-sensing sampling circuit, the temperature-sensing sampling circuit comprising: the temperature reference voltage acquisition module, the buffer module, the amplifying module and the comparison module;
the temperature reference voltage acquisition module is used for outputting a first path of temperature reference voltage and a second path of temperature reference voltage;
The buffer module is used for controlling the stability of the first path of temperature reference voltage;
The amplifying module is used for amplifying the first path of temperature reference voltage and the second path of temperature reference voltage and outputting temperature sampling voltage related to the first path of temperature reference voltage;
The comparison module is used for removing the first path of temperature reference voltage according to the temperature sampling voltage and the reference voltage and outputting a target temperature sampling voltage.
Preferably, in the above temperature detection sampling circuit, the temperature reference voltage acquisition module includes: the first current source, the second current source, the first triode and the second triode;
One end of the first current source is connected with the emitter of the first triode, and the other end of the first current source is connected with the voltage input end;
the base electrode of the first triode is connected with the collector electrode of the first triode and then grounded;
one end of the second current source is connected with the emitter of the second triode, and the other end of the second current source is connected with the voltage input end;
And the base electrode of the second triode is connected with the collector electrode of the second triode and then grounded.
Preferably, in the temperature detection sampling circuit, a current value emitted by the second current source is 10 times that emitted by the first current source.
Preferably, in the temperature detection sampling circuit, an area of the first triode is the same as an area of the second triode.
Preferably, in the temperature detection sampling circuit, the buffer module includes: a first operational amplifier;
The non-inverting input end of the first operational amplifier is connected with the emitter of the first triode, and the inverting input end of the first operational amplifier is connected with the output end of the first operational amplifier.
Preferably, in the temperature detection sampling circuit, the amplifying module includes: the second operational amplifier, the first resistor and the second resistor;
the non-inverting input end of the second operational amplifier is connected with the emitter of the second triode, and the inverting input end of the second operational amplifier is connected with one end of the first resistor;
the other end of the first resistor is connected with the output end of the first operational amplifier;
One end of the second resistor is connected with the inverting input end of the second operational amplifier, and the other end of the second resistor is connected with the output end of the second operational amplifier;
and the output end of the second operational amplifier is used for outputting the temperature sampling voltage.
Preferably, in the temperature detection sampling circuit, the resistance of the second resistor is 11 times that of the first resistor.
Preferably, in the above temperature detection sampling circuit, the comparing module includes: the third operational amplifier, the third resistor, the fourth resistor, the fifth resistor and the sixth resistor;
One end of the third resistor is connected with the output end of the second operational amplifier, and the other end of the third resistor is connected with the non-inverting input end of the third operational amplifier;
one end of the fourth resistor is connected with the non-inverting input end of the third operational amplifier, and the other end of the fourth resistor is grounded;
One end of the fifth resistor is connected with the input end of the reference voltage, and the other end of the fifth resistor is connected with the inverting input end of the third operational amplifier;
One end of the sixth resistor is connected with the inverting input end of the third operational amplifier, and the other end of the sixth resistor is connected with the output end of the third operational amplifier;
and the output end of the third operational amplifier is used for outputting the target temperature sampling voltage.
Preferably, in the temperature detection sampling circuit, the resistance of the three resistors, the resistance of the fourth resistor, the resistance of the fifth resistor, and the resistance of the sixth resistor are the same.
As can be seen from the above description, the temperature detection sampling circuit provided by the present invention includes: the temperature reference voltage acquisition module, the buffer module, the amplifying module and the comparison module; the temperature reference voltage acquisition module is used for outputting a first path of temperature reference voltage and a second path of temperature reference voltage; the buffer module is used for controlling the stability of the first path of temperature reference voltage; the amplifying module is used for amplifying the first path of temperature reference voltage and the second path of temperature reference voltage and outputting temperature sampling voltage related to the first path of temperature reference voltage; the comparison module is used for removing the first path of temperature reference voltage according to the temperature sampling voltage and the reference voltage and outputting a target temperature sampling voltage.
According to the above description, the target temperature sampling voltage finally output by the temperature detection sampling circuit has no relation with the first path of temperature reference voltage and the second path of temperature reference voltage output by the temperature reference voltage acquisition module, so that the influence of the process variation of the temperature detection device in the temperature reference voltage acquisition module on the target temperature sampling voltage is eliminated, and the accuracy of the temperature detection result is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only embodiments of the present invention, and that other drawings can be obtained according to the provided drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a temperature detection sampling circuit according to an embodiment of the present invention;
fig. 2 is a schematic diagram of a specific structure of a temperature detection sampling circuit according to an embodiment of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In order that the above-recited objects, features and advantages of the present invention will become more readily apparent, a more particular description of the invention will be rendered by reference to the appended drawings and appended detailed description.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a temperature detection sampling circuit according to an embodiment of the present invention, where the temperature detection sampling circuit includes: the temperature reference voltage acquisition module 11, the buffer module 12, the amplifying module 13 and the comparison module 14.
The temperature reference voltage acquisition module 11 is configured to output a first path of temperature reference voltage and a second path of temperature reference voltage.
The buffer module 12 is configured to control stability of the first path of temperature reference voltage.
The amplifying module 13 is configured to amplify the first path of temperature reference voltage and the second path of temperature reference voltage, and output a temperature sampling voltage related to the first path of temperature reference voltage.
The comparison module 14 is configured to remove the first path of temperature reference voltage according to the temperature sampling voltage and the reference voltage, and output a target temperature sampling voltage.
Specifically, a first output end of the temperature reference voltage acquisition module 11 is connected with a first input end of the amplifying module 13, a second output end of the temperature reference voltage acquisition module 11 is connected with an input end of the buffer module 12, and an output end of the buffer module 12 is connected with a second input end of the amplifying module 13.
The temperature reference voltage acquisition module 11 inputs the second temperature reference voltage to the first input of the amplifying module 13 through its first output.
The temperature reference voltage acquisition module 11 inputs the first temperature reference voltage to the second input terminal of the amplifying module 13 through the buffer module 12 through the second output terminal thereof.
The output end of the amplifying module 13 is connected with the first input end of the comparing module 14, and the second input end of the comparing module 14 is connected with the input end of the reference voltage.
According to the above description, the target temperature sampling voltage finally output by the temperature detection sampling circuit has no relation with the first path of temperature reference voltage and the second path of temperature reference voltage output by the temperature reference voltage acquisition module, so that the influence of the process variation of the temperature detection device in the temperature reference voltage acquisition module on the target temperature sampling voltage is eliminated, and the accuracy of the temperature detection result is improved.
Further, as shown in fig. 2, the temperature reference voltage acquisition module 11 includes: a first current source I1, a second current source I2, a first transistor Q1 and a second transistor Q2.
One end of the first current source I1 is connected to the emitter of the first triode Q1, and the other end of the first current source I1 is connected to the voltage input end Vcc.
The base electrode of the first triode Q1 is connected with the collector electrode of the first triode Q1 and then grounded.
One end of the second current source I2 is connected to the emitter of the second triode Q2, and the other end of the second current source I2 is connected to the voltage input end Vcc.
The base electrode of the second triode Q2 is connected with the collector electrode of the second triode Q2 and then grounded.
Specifically, the bipolar first transistor Q1 is used to generate the base-emitter junction voltage, i.e., the first path temperature reference voltage V BE1, and the bipolar second transistor Q2 is used to generate the base-emitter junction voltage, i.e., the second path temperature reference voltage V BE2.
Wherein,
Where V T represents the thermal voltage, I c1 represents the collector current of the first transistor Q1, and I s1 represents the saturation current of the first transistor Q1.
In the same way, the processing method comprises the steps of,
Where V T represents the thermal voltage, I c2 represents the collector current of the second transistor Q2, and I s2 represents the saturation current of the second transistor Q2.
As can be seen from the formula (1) and the formula (2), since both I c1、Is1、Ic2 and I s2 are related to temperature, V BE1 and V BE2 are not in a linear relationship with temperature change, and if V BE1 and V BE2 are used as the temperature detection results, the result error is larger, so in the embodiment of the invention, the V BE1 and V BE2 are further processed subsequently to improve the accuracy of the final temperature detection results.
In addition, the process variation of the first triode Q1 and the second triode Q2 of the temperature detection device in the temperature reference voltage acquisition module 11 can influence the target temperature sampling voltage.
Further, the current value sent by the second current source I2 is 10 times that sent by the first current source I1.
That is, 10I c1＝Ic2 (3)
Further, the area of the first triode Q1 is the same as the area of the second triode Q2.
That is, I s1＝Is2 (4)
Further, as shown in fig. 2, the buffer module 12 includes: a first operational amplifier 21.
The non-inverting input terminal of the first operational amplifier 21 is connected to the emitter of the first triode Q1, and the inverting input terminal of the first operational amplifier 21 is connected to the output terminal of the first operational amplifier 21.
Specifically, the first operational amplifier 21 plays a role of buffering, so that all the current emitted by the first current source I1 flows into the first transistor Q1, so as to improve the stability of the first path temperature reference voltage.
Further, as shown in fig. 2, the amplifying module 13 includes: a second operational amplifier 22, a first resistor R1 and a second resistor R2.
The non-inverting input terminal of the second operational amplifier 22 is connected to the emitter of the second triode Q2, and the inverting input terminal of the second operational amplifier 22 is connected to one end of the first resistor R1.
The other end of the first resistor R1 is connected to the output end of the first operational amplifier 21.
One end of the second resistor R2 is connected to the inverting input terminal of the second operational amplifier 22, and the other end of the second resistor R2 is connected to the output terminal of the second operational amplifier 22.
The output terminal of the second operational amplifier 22 is used for outputting the temperature sampling voltage.
Specifically, the resistance of the second resistor R2 is 11 times that of the first resistor R1.
That is, R 2＝11R1 (6)
The "virtual short" characteristic of the operational amplifier is known:
Where V TS represents the temperature sampling voltage.
Substituting equation (6) into equation (7) yields:
the formula (8) is simplified to obtain: v TS＝12VBE2-11VBE1 (9)
Substituting equation (1), equation (2), equation (3) and equation (4) into equation (9) can be known:
The arrangement of formula (10) can be obtained:
namely, V TS＝VTLn(1012)+VBE1 (12)
Finally available, V TS＝27.63VT+VBE1 (13)
From the above description, it can be seen that the temperature sampling voltage V TS is still related to the first temperature reference voltage V BE1, and the temperature detection result is still error.
Further, as shown in fig. 2, the comparing module 14 includes: a third operational amplifier 23, a third resistor R3, a fourth resistor R4, a fifth resistor R5, and a sixth resistor R6.
One end of the third resistor R3 is connected to the output end of the second operational amplifier 22, and the other end of the third resistor R3 is connected to the non-inverting input end of the third operational amplifier 23.
One end of the fourth resistor R4 is connected to the non-inverting input terminal of the third operational amplifier 23, and the other end of the fourth resistor R4 is grounded.
One end of the fifth resistor R5 is connected to the input terminal of the reference voltage, and the other end of the fifth resistor R5 is connected to the inverting input terminal of the third operational amplifier 23.
One end of the sixth resistor R6 is connected to the inverting input terminal of the third operational amplifier 23, and the other end of the sixth resistor R6 is connected to the output terminal of the third operational amplifier 23.
The output end of the third operational amplifier 23 is used for outputting the target temperature sampling voltage.
The resistance of the three resistors R3, the resistance of the fourth resistor R4, the resistance of the fifth resistor R5, and the resistance of the sixth resistor R6 are the same.
Specifically, according to the process characteristics of the first triode Q1, the reference voltage V BG is set as follows:
VBG＝22.46VT+VBE1 (14)
substituting equation (14) into equation (13) yields:
VTS＝5.17VT+VBG (15)
Then, the output voltage of the third operational amplifier 23, i.e., the target temperature sampling voltage V OUT is:
VOUT＝VTS-VBG＝5.17VT (16)
Since the thermal voltage V T has a positive temperature coefficient, it is expressed as:
then the first time period of the first time period,
Therefore, the target temperature sampling voltage V OUT -0.45 mV/°c has a good linear relationship with the temperature variation, and compared with the temperature sampling voltage V TS, the target temperature sampling voltage V OUT at this time has no relationship with the first temperature reference voltage V BE1, the second temperature reference voltage V BE2 and the reference voltage V BG, which means that the process variation of the first transistor and the second transistor of the temperature detection device in the temperature reference voltage acquisition module of the final output target temperature sampling voltage V OUT is not changed any more.
Therefore, the temperature detection sampling circuit provided by the invention is irrelevant to process variation, and the accuracy of a temperature detection result is greatly improved.
It should be noted that, in the present specification, each embodiment is described in a progressive manner, and each embodiment is mainly described as different from other embodiments, and identical and similar parts between the embodiments are all enough to be referred to each other.
It is further noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that an article or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such article or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in an article or device comprising the element.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (6)
1. A temperature detection sampling circuit, characterized in that the temperature detection sampling circuit comprises: the temperature reference voltage acquisition module, the buffer module, the amplifying module and the comparison module;
the temperature reference voltage acquisition module is used for outputting a first path of temperature reference voltage and a second path of temperature reference voltage;
The buffer module is used for controlling the stability of the first path of temperature reference voltage;
The amplifying module is used for amplifying the first path of temperature reference voltage and the second path of temperature reference voltage and outputting temperature sampling voltage related to the first path of temperature reference voltage;
the comparison module is used for removing the first path of temperature reference voltage according to the temperature sampling voltage and the reference voltage and outputting a target temperature sampling voltage;
The temperature sampling module comprises a first current source, a second current source, a first triode and a second triode; one end of the first current source is connected with the emitter of the first triode, and the other end of the first current source is connected with the voltage input end; the base electrode of the first triode is connected with the collector electrode of the first triode and then grounded; one end of the second current source is connected with the emitter of the second triode, and the other end of the second current source is connected with the voltage input end; the base electrode of the second triode is connected with the collector electrode of the second triode and then grounded;
The amplifying module includes: the second operational amplifier, the first resistor and the second resistor; the non-inverting input end of the second operational amplifier is connected with the emitter of the second triode, and the inverting input end of the second operational amplifier is connected with one end of the first resistor; the other end of the first resistor is connected with the output end of the first operational amplifier; one end of the second resistor is connected with the inverting input end of the second operational amplifier, and the other end of the second resistor is connected with the output end of the second operational amplifier; the output end of the second operational amplifier is used for outputting the temperature sampling voltage;
The comparison module comprises: the third operational amplifier, the third resistor, the fourth resistor, the fifth resistor and the sixth resistor; one end of the third resistor is connected with the output end of the second operational amplifier, and the other end of the third resistor is connected with the non-inverting input end of the third operational amplifier; one end of the fourth resistor is connected with the non-inverting input end of the third operational amplifier, and the other end of the fourth resistor is grounded; one end of the fifth resistor is connected with the input end of the reference voltage, and the other end of the fifth resistor is connected with the inverting input end of the third operational amplifier; one end of the sixth resistor is connected with the inverting input end of the third operational amplifier, and the other end of the sixth resistor is connected with the output end of the third operational amplifier;
and the output end of the third operational amplifier is used for outputting the target temperature sampling voltage.
2. The temperature-sensing sampling circuit of claim 1, wherein the second current source emits a current value that is 10 times the current value emitted by the first current source.
3. The temperature-sensing sampling circuit of claim 1, wherein an area of the first transistor is the same as an area of the second transistor.
4. The temperature-sensing sampling circuit of claim 1, wherein the buffer module comprises: a first operational amplifier;
The non-inverting input end of the first operational amplifier is connected with the emitter of the first triode, and the inverting input end of the first operational amplifier is connected with the output end of the first operational amplifier.
5. The temperature-detecting and sampling circuit according to claim 1, wherein the resistance value of the second resistor is 11 times that of the first resistor.
6. The temperature-detecting and sampling circuit according to claim 1, wherein the resistance of the three resistors, the resistance of the fourth resistor, the resistance of the fifth resistor, and the resistance of the sixth resistor are the same.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810895437.4A CN108709646B (en) | 2018-08-08 | 2018-08-08 | Temperature detection sampling circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810895437.4A CN108709646B (en) | 2018-08-08 | 2018-08-08 | Temperature detection sampling circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108709646A CN108709646A (en) | 2018-10-26 |
| CN108709646B true CN108709646B (en) | 2024-06-04 |
Family
ID=63875690
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810895437.4A Active CN108709646B (en) | 2018-08-08 | 2018-08-08 | Temperature detection sampling circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108709646B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110068394A (en) * | 2019-04-08 | 2019-07-30 | 上海艾为电子技术股份有限公司 | A kind of chip temperature detection circuit and audio-frequency power amplifier |
| CN112013985B (en) * | 2019-05-31 | 2023-08-01 | 深圳迈瑞生物医疗电子股份有限公司 | Temperature detection device and temperature detection method |
| CN114295885B (en) * | 2021-12-29 | 2023-10-13 | 东莞市长工微电子有限公司 | Current detection circuit and driving device |
Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10038693A1 (en) * | 2000-07-28 | 2002-02-14 | Infineon Technologies Ag | Temperature sensor for high frequency digital signal amplifier, has control circuit which calculates difference between voltages of FETs which are operated at different operating points by current generator |
| JP2006242894A (en) * | 2005-03-07 | 2006-09-14 | Ricoh Co Ltd | Temperature-sensing circuit |
| CN1991319A (en) * | 2005-12-28 | 2007-07-04 | Tdk株式会社 | Circuit and method for temperature detection |
| JP2007187559A (en) * | 2006-01-13 | 2007-07-26 | Ricoh Co Ltd | Temperature detection circuit |
| TW200807866A (en) * | 2006-07-26 | 2008-02-01 | Han-Pang Huang | Circuit for combining voltage reference and temperature sensor |
| JP2008058298A (en) * | 2006-08-02 | 2008-03-13 | Nec Electronics Corp | Temperature detection circuit, and semiconductor device |
| KR20090010407A (en) * | 2007-07-23 | 2009-01-30 | 삼성전자주식회사 | Voltage divider and internal supply voltage generation circuit |
| JP2009044002A (en) * | 2007-08-09 | 2009-02-26 | Ricoh Co Ltd | Semiconductor device, and temperature-sensing device using same |
| CN101387557A (en) * | 2007-09-10 | 2009-03-18 | 株式会社理光 | Temperature sensing circuit and electronic device using same |
| CN101762336A (en) * | 2009-11-24 | 2010-06-30 | 上海贝岭股份有限公司 | Current temperature sensor circuit for CMOS switch and control method thereof |
| CN102338668A (en) * | 2010-07-27 | 2012-02-01 | 深圳艾科创新微电子有限公司 | Temperature detection circuit |
| CN107888148A (en) * | 2017-12-27 | 2018-04-06 | 上海艾为电子技术股份有限公司 | A kind of temperature drift compensating circuit and RC oscillator |
| CN208833381U (en) * | 2018-08-08 | 2019-05-07 | 上海艾为电子技术股份有限公司 | A kind of temperature detection sample circuit |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4990049B2 (en) * | 2007-07-02 | 2012-08-01 | 株式会社リコー | Temperature detection circuit |
-
2018
- 2018-08-08 CN CN201810895437.4A patent/CN108709646B/en active Active
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10038693A1 (en) * | 2000-07-28 | 2002-02-14 | Infineon Technologies Ag | Temperature sensor for high frequency digital signal amplifier, has control circuit which calculates difference between voltages of FETs which are operated at different operating points by current generator |
| JP2006242894A (en) * | 2005-03-07 | 2006-09-14 | Ricoh Co Ltd | Temperature-sensing circuit |
| CN1991319A (en) * | 2005-12-28 | 2007-07-04 | Tdk株式会社 | Circuit and method for temperature detection |
| JP2007187559A (en) * | 2006-01-13 | 2007-07-26 | Ricoh Co Ltd | Temperature detection circuit |
| TW200807866A (en) * | 2006-07-26 | 2008-02-01 | Han-Pang Huang | Circuit for combining voltage reference and temperature sensor |
| JP2008058298A (en) * | 2006-08-02 | 2008-03-13 | Nec Electronics Corp | Temperature detection circuit, and semiconductor device |
| KR20090010407A (en) * | 2007-07-23 | 2009-01-30 | 삼성전자주식회사 | Voltage divider and internal supply voltage generation circuit |
| JP2009044002A (en) * | 2007-08-09 | 2009-02-26 | Ricoh Co Ltd | Semiconductor device, and temperature-sensing device using same |
| CN101387557A (en) * | 2007-09-10 | 2009-03-18 | 株式会社理光 | Temperature sensing circuit and electronic device using same |
| CN101762336A (en) * | 2009-11-24 | 2010-06-30 | 上海贝岭股份有限公司 | Current temperature sensor circuit for CMOS switch and control method thereof |
| CN102338668A (en) * | 2010-07-27 | 2012-02-01 | 深圳艾科创新微电子有限公司 | Temperature detection circuit |
| CN107888148A (en) * | 2017-12-27 | 2018-04-06 | 上海艾为电子技术股份有限公司 | A kind of temperature drift compensating circuit and RC oscillator |
| CN208833381U (en) * | 2018-08-08 | 2019-05-07 | 上海艾为电子技术股份有限公司 | A kind of temperature detection sample circuit |
Non-Patent Citations (1)
| Title |
|---|
| " 基于CMOS工艺的数字温度传感器的研究";王涵阳;《中国优秀硕士学位论文全文数据库 信息科技辑》;20180415(第04期);第I140-426页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108709646A (en) | 2018-10-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108709646B (en) | Temperature detection sampling circuit | |
| CN109084911B (en) | Temperature detection sampling circuit and audio amplifier chip | |
| US9483069B2 (en) | Circuit for generating bias current | |
| US20110074495A1 (en) | Compensated bandgap | |
| EP1928087B1 (en) | Variable gain amplifier circuit | |
| CN208833381U (en) | A kind of temperature detection sample circuit | |
| US20100237926A1 (en) | Voltage generating circuit | |
| JP2000156615A (en) | Semiconductor integrated circuit | |
| JP3275547B2 (en) | Voltage-frequency conversion circuit | |
| CN116418315B (en) | Filter temperature analog circuit | |
| CN105759889A (en) | Constant-current circuit and sensor device having this | |
| US20200204124A1 (en) | Amplifier with input bias current cancellation | |
| JP3315921B2 (en) | Temperature detection circuit | |
| CN207319097U (en) | Band-gap reference circuit | |
| JP4655154B2 (en) | Window comparator circuit | |
| JP5724630B2 (en) | Thermocouple amplifier circuit and temperature monitoring system | |
| JP4359434B2 (en) | Variable attenuation circuit | |
| JP5482126B2 (en) | Reference voltage generating circuit and receiving circuit | |
| JP6758029B2 (en) | Semiconductor device | |
| EP3918351A1 (en) | Analog based speaker thermal protection in class-d amplifiers | |
| CN211046880U (en) | Split type amplification detection circuit of ultrasonic liquid level sensor | |
| JPS6343923B2 (en) | ||
| US8600081B2 (en) | Audio signal amplifying circuit | |
| JP2005184628A (en) | Input circuit | |
| JP2010277479A (en) | Power circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: Room 1201, No.2, Lane 908, Xiuwen Road, Minhang District, Shanghai, 201199 Patentee after: SHANGHAI AWINIC TECHNOLOGY Co.,Ltd. Country or region after: China Address before: Room 303-39, building 33, 680 Guiping Road, Xuhui District, Shanghai 200233 Patentee before: SHANGHAI AWINIC TECHNOLOGY Co.,Ltd. Country or region before: China |
|
| CP03 | Change of name, title or address |