CN108701601B - Adhesive tape for semiconductor processing and method for manufacturing semiconductor device - Google Patents
Adhesive tape for semiconductor processing and method for manufacturing semiconductor device Download PDFInfo
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- CN108701601B CN108701601B CN201780012489.6A CN201780012489A CN108701601B CN 108701601 B CN108701601 B CN 108701601B CN 201780012489 A CN201780012489 A CN 201780012489A CN 108701601 B CN108701601 B CN 108701601B
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- Prior art keywords
- adhesive tape
- adhesive
- meth
- buffer layer
- semiconductor
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 214
- 239000002390 adhesive tape Substances 0.000 title claims abstract description 148
- 238000012545 processing Methods 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title claims description 46
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 239000000872 buffer Substances 0.000 claims abstract description 128
- 239000010410 layer Substances 0.000 claims description 131
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 101
- 239000000203 mixture Substances 0.000 claims description 63
- 150000001875 compounds Chemical class 0.000 claims description 55
- 238000000227 grinding Methods 0.000 claims description 54
- 230000001070 adhesive effect Effects 0.000 claims description 52
- -1 polyethylene terephthalate Polymers 0.000 claims description 51
- 239000000853 adhesive Substances 0.000 claims description 50
- 239000000463 material Substances 0.000 claims description 50
- 239000012790 adhesive layer Substances 0.000 claims description 49
- 125000000217 alkyl group Chemical group 0.000 claims description 36
- 239000000178 monomer Substances 0.000 claims description 27
- 125000000524 functional group Chemical group 0.000 claims description 22
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 21
- 239000011254 layer-forming composition Substances 0.000 claims description 16
- 125000004432 carbon atom Chemical group C* 0.000 claims description 15
- 229920000178 Acrylic resin Polymers 0.000 claims description 14
- 239000004925 Acrylic resin Substances 0.000 claims description 14
- 125000004429 atom Chemical group 0.000 claims description 11
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 claims description 10
- 125000002723 alicyclic group Chemical group 0.000 claims description 10
- 238000003860 storage Methods 0.000 claims description 10
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 9
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 9
- 125000000623 heterocyclic group Chemical group 0.000 claims description 8
- 239000000758 substrate Substances 0.000 abstract description 26
- 235000012431 wafers Nutrition 0.000 description 132
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- 239000011347 resin Substances 0.000 description 29
- 239000004840 adhesive resin Substances 0.000 description 25
- 229920006223 adhesive resin Polymers 0.000 description 25
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- 238000000576 coating method Methods 0.000 description 16
- 239000011248 coating agent Substances 0.000 description 15
- 239000003431 cross linking reagent Substances 0.000 description 15
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- 230000000052 comparative effect Effects 0.000 description 13
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- 238000011156 evaluation Methods 0.000 description 11
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
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- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 5
- 125000003277 amino group Chemical group 0.000 description 5
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- RJLZSKYNYLYCNY-UHFFFAOYSA-N ethyl carbamate;isocyanic acid Chemical group N=C=O.CCOC(N)=O RJLZSKYNYLYCNY-UHFFFAOYSA-N 0.000 description 5
- 230000001976 improved effect Effects 0.000 description 5
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- UHESRSKEBRADOO-UHFFFAOYSA-N ethyl carbamate;prop-2-enoic acid Chemical compound OC(=O)C=C.CCOC(N)=O UHESRSKEBRADOO-UHFFFAOYSA-N 0.000 description 4
- 239000000945 filler Substances 0.000 description 4
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- 239000012956 1-hydroxycyclohexylphenyl-ketone Substances 0.000 description 3
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- OMIGHNLMNHATMP-UHFFFAOYSA-N 2-hydroxyethyl prop-2-enoate Chemical compound OCCOC(=O)C=C OMIGHNLMNHATMP-UHFFFAOYSA-N 0.000 description 3
- SXIFAEWFOJETOA-UHFFFAOYSA-N 4-hydroxy-butyl Chemical group [CH2]CCCO SXIFAEWFOJETOA-UHFFFAOYSA-N 0.000 description 3
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- 239000003522 acrylic cement Substances 0.000 description 3
- 125000003368 amide group Chemical group 0.000 description 3
- 239000002216 antistatic agent Substances 0.000 description 3
- 125000003118 aryl group Chemical group 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- MQDJYUACMFCOFT-UHFFFAOYSA-N bis[2-(1-hydroxycyclohexyl)phenyl]methanone Chemical compound C=1C=CC=C(C(=O)C=2C(=CC=CC=2)C2(O)CCCCC2)C=1C1(O)CCCCC1 MQDJYUACMFCOFT-UHFFFAOYSA-N 0.000 description 3
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- 238000005336 cracking Methods 0.000 description 3
- 238000004132 cross linking Methods 0.000 description 3
- 239000000975 dye Substances 0.000 description 3
- 238000005227 gel permeation chromatography Methods 0.000 description 3
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 3
- RRAMGCGOFNQTLD-UHFFFAOYSA-N hexamethylene diisocyanate Chemical compound O=C=NCCCCCCN=C=O RRAMGCGOFNQTLD-UHFFFAOYSA-N 0.000 description 3
- 125000002768 hydroxyalkyl group Chemical group 0.000 description 3
- 239000012948 isocyanate Substances 0.000 description 3
- 150000002513 isocyanates Chemical class 0.000 description 3
- NIMLQBUJDJZYEJ-UHFFFAOYSA-N isophorone diisocyanate Chemical compound CC1(C)CC(N=C=O)CC(C)(CN=C=O)C1 NIMLQBUJDJZYEJ-UHFFFAOYSA-N 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
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- 238000003786 synthesis reaction Methods 0.000 description 3
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- QWUWMCYKGHVNAV-UHFFFAOYSA-N 1,2-dihydrostilbene Chemical group C=1C=CC=CC=1CCC1=CC=CC=C1 QWUWMCYKGHVNAV-UHFFFAOYSA-N 0.000 description 2
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- 239000004698 Polyethylene Substances 0.000 description 1
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- 230000001588 bifunctional effect Effects 0.000 description 1
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 1
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- HNEGQIOMVPPMNR-IHWYPQMZSA-N citraconic acid Chemical compound OC(=O)C(/C)=C\C(O)=O HNEGQIOMVPPMNR-IHWYPQMZSA-N 0.000 description 1
- 229940018557 citraconic acid Drugs 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000003851 corona treatment Methods 0.000 description 1
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- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
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- KORSJDCBLAPZEQ-UHFFFAOYSA-N dicyclohexylmethane-4,4'-diisocyanate Chemical compound C1CC(N=C=O)CCC1CC1CCC(N=C=O)CC1 KORSJDCBLAPZEQ-UHFFFAOYSA-N 0.000 description 1
- 238000007607 die coating method Methods 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000012156 elution solvent Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- GFJVXXWOPWLRNU-UHFFFAOYSA-N ethenyl formate Chemical compound C=COC=O GFJVXXWOPWLRNU-UHFFFAOYSA-N 0.000 description 1
- 229920001038 ethylene copolymer Polymers 0.000 description 1
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
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- 238000007756 gravure coating Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- XXMIOPMDWAUFGU-UHFFFAOYSA-N hexane-1,6-diol Chemical compound OCCCCCCO XXMIOPMDWAUFGU-UHFFFAOYSA-N 0.000 description 1
- 229920001903 high density polyethylene Polymers 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 229920000554 ionomer Polymers 0.000 description 1
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 239000005001 laminate film Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229920004889 linear high-density polyethylene Polymers 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 1
- 150000002763 monocarboxylic acids Chemical class 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- ZQXSMRAEXCEDJD-UHFFFAOYSA-N n-ethenylformamide Chemical compound C=CNC=O ZQXSMRAEXCEDJD-UHFFFAOYSA-N 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 125000001400 nonyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- JFNLZVQOOSMTJK-KNVOCYPGSA-N norbornene Chemical compound C1[C@@H]2CC[C@H]1C=C2 JFNLZVQOOSMTJK-KNVOCYPGSA-N 0.000 description 1
- RPQRDASANLAFCM-UHFFFAOYSA-N oxiran-2-ylmethyl prop-2-enoate Chemical compound C=CC(=O)OCC1CO1 RPQRDASANLAFCM-UHFFFAOYSA-N 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 1
- 229920001083 polybutene Polymers 0.000 description 1
- 229920001748 polybutylene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920013716 polyethylene resin Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 229920006295 polythiol Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- HJWLCRVIBGQPNF-UHFFFAOYSA-N prop-2-enylbenzene Chemical compound C=CCC1=CC=CC=C1 HJWLCRVIBGQPNF-UHFFFAOYSA-N 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000003938 response to stress Effects 0.000 description 1
- 125000000467 secondary amino group Chemical group [H]N([*:1])[*:2] 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000013464 silicone adhesive Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 125000001302 tertiary amino group Chemical group 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- LDHQCZJRKDOVOX-UHFFFAOYSA-N trans-crotonic acid Natural products CC=CC(O)=O LDHQCZJRKDOVOX-UHFFFAOYSA-N 0.000 description 1
- 125000002948 undecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
- C09J133/04—Homopolymers or copolymers of esters
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
- C09J133/04—Homopolymers or copolymers of esters
- C09J133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
- C09J133/08—Homopolymers or copolymers of acrylic acid esters
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
- C09J7/25—Plastics; Metallised plastics based on macromolecular compounds obtained otherwise than by reactions involving only carbon-to-carbon unsaturated bonds
- C09J7/255—Polyesters
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/38—Pressure-sensitive adhesives [PSA]
- C09J7/381—Pressure-sensitive adhesives [PSA] based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
- C09J7/385—Acrylic polymers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/50—Adhesives in the form of films or foils characterised by a primer layer between the carrier and the adhesive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Adhesive Tapes (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Dicing (AREA)
- Laminated Bodies (AREA)
- Paints Or Removers (AREA)
Abstract
The adhesive tape for semiconductor processing of the present invention is used by being adhered to the surface of a semiconductor wafer in the following steps: the adhesive tape for semiconductor processing comprises: the adhesive tape for semiconductor processing has a total thickness of 160 [ mu ] m or less, a ratio (D2/D1) of a thickness (D2) of the buffer layer to a thickness (D1) of the substrate of 0.7 or less, and a peeling force to a semiconductor wafer of 1000mN/50mm or less.
Description
Technical Field
The present invention relates to an adhesive tape for semiconductor processing to be used for attaching to a semiconductor wafer when manufacturing a semiconductor device by a dicing method, and a method for manufacturing a semiconductor device using the adhesive tape.
Background
In the progress of miniaturization and multifunction of various electronic devices, the semiconductor chips mounted therein are also demanded to be miniaturized and thinned in the same manner. In order to reduce the thickness of the chip, the back surface of the semiconductor wafer is generally ground to adjust the thickness. In addition, there is also a method called a dicing method in which grooves of a predetermined depth are formed from the front surface side of a wafer, and then grinding is performed from the back surface side of the wafer, and chips are singulated by the grinding. In the dicing-first method, the back grinding of the wafer and the singulation of the chips can be performed simultaneously, so that a thin chip can be efficiently manufactured. In addition, the dicing method includes, in addition to the method of grinding from the wafer back surface side after forming the grooves of a predetermined depth on the wafer front surface side as described above, a method of providing a modified layer inside the wafer by a laser and singulating chips by a pressure or the like at the time of wafer back surface grinding.
Conventionally, in grinding the back surface of a semiconductor wafer, an adhesive tape called a back grinding tape is usually attached to the wafer surface in order to protect the circuits on the wafer surface and to fix the semiconductor wafer and singulated semiconductor chips. As a backing tape used in the dicing method, an adhesive sheet including a base material and an adhesive layer provided on one surface of the base material, wherein a buffer layer is further provided on the other surface side of the base material, is known.
The back grinding tape is provided with the buffer layer, so that vibration generated during back grinding of the wafer can be alleviated. In addition, the semiconductor wafer is fixed to the jig table by sucking the wafer surface side provided with the back grinding tape to the table during back grinding, and the buffer layer can absorb irregularities caused by foreign substances and the like existing on the table. The back grinding tape prevents breakage of the semiconductor wafer, chipping of the chip, and the like generated at the time of back grinding by the action of the above buffer layer.
Patent document 1 discloses an adhesive sheet comprising a base material, an adhesive layer and a buffer layer as described above, wherein the thickness of the base material is 10 to 150 μm, the young's modulus thereof is 1000 to 30000MPa, the thickness of the buffer layer is 5 to 80 μm, and the maximum value of tan δ of dynamic viscoelasticity thereof is 0.5 or more. Patent document 1 discloses the following: by using the adhesive sheet as a back grinding tape, chipping and discoloration of the chip can be prevented when manufacturing a semiconductor chip by a dicing-first method.
Prior art literature
Patent literature
Patent document 1: japanese patent laid-open publication No. 2005-349997
Disclosure of Invention
Problems to be solved by the invention
However, in recent years, demands for thinning and miniaturization of semiconductor chips have been further increased, and for example, it has been demanded to manufacture semiconductor chips having a thickness of less than 50 μm and semiconductor chips having a square width of 0.5 mm. In manufacturing a miniaturized and thinned semiconductor chip in this way, as described in patent document 1, breakage (chip cracking) such as chipping and cracking of the semiconductor chip may be difficult to suppress by adjusting only the young's modulus of the base material and the tan δ maximum value of the buffer layer and setting the thicknesses of the base material and the buffer layer to a certain range. In particular, when the surface protective tape is peeled from the surface of the wafer after grinding, a large load is applied to the miniaturized and thinned semiconductor chip as described above, and the chip breakage is caused.
The present invention has been made in view of the above-described problems, and an object of the present invention is to provide an adhesive tape for semiconductor processing that can prevent breakage or breakage of a semiconductor chip even when the semiconductor chip is manufactured in a thinned or miniaturized form by a dicing method.
Means for solving the problems
As a result of examining the mechanism of chipping or breakage of a semiconductor chip, the inventors have found that chipping or breakage of a semiconductor chip occurs when grinding the back surface of a semiconductor wafer or when peeling an adhesive tape from the semiconductor chip in the case of manufacturing a thinned and miniaturized semiconductor chip by a dicing-first method. In the dicing method, it was found that in order to prevent chipping or breakage of the semiconductor chip, which occurs when the semiconductor wafer is ground and singulated into chips, and when the adhesive tape is peeled from the semiconductor chip, it is important to set the total thickness of the adhesive tape and the thickness ratio of the base material to the buffer layer to a certain range and the peeling force of the adhesive tape to the semiconductor wafer to a given value or less, and the present invention as described below was completed.
The present invention provides the following (1) to (13).
(1) A semiconductor processing adhesive tape which is used by being stuck to the surface of a semiconductor wafer in the following steps: grinding the back surface of the semiconductor wafer having grooves formed on the surface of the semiconductor wafer or modified regions formed on the semiconductor wafer, and singulating the semiconductor wafer into semiconductor chips by the grinding,
the adhesive tape for semiconductor processing comprises: a base material, a buffer layer arranged on one surface of the base material, and an adhesive layer arranged on the other surface of the base material,
the adhesive tape for semiconductor processing has a total thickness of 160 [ mu ] m or less, a ratio (D2/D1) of the thickness (D2) of the buffer layer to the thickness (D1) of the base material of 0.7 or less, and a peeling force to a semiconductor wafer of 1000mN/50mm or less.
(2) The adhesive tape for semiconductor processing according to the above (1), wherein the Young's modulus of the base material is 1000MPa or more.
(3) The adhesive tape for semiconductor processing according to the above (1) or (2), wherein the thickness (D1) of the substrate is 110 μm or less.
(4) The adhesive tape for semiconductor processing according to any one of the above (1) to (3), wherein the base material has at least a polyethylene terephthalate film.
(5) The adhesive tape for semiconductor processing according to any one of (1) to (4), wherein the adhesive layer is formed of an energy ray-curable adhesive.
(6) The adhesive tape for semiconductor processing according to any one of the above (1) to (5), wherein the adhesive layer has an elastic modulus at 23℃of 0.10 to 0.50MPa.
(7) The adhesive tape for semiconductor processing according to any one of (1) to (6), wherein the thickness (D3) of the adhesive layer is 70 μm or less.
(8) The adhesive tape for semiconductor processing according to any one of (1) to (7), wherein the adhesive layer is formed of an adhesive composition containing an acrylic resin having a structural unit derived from an alkyl (meth) acrylate having 4 or more carbon atoms in an alkyl group, a structural unit derived from an alkyl (meth) acrylate having 1 to 3 carbon atoms in an alkyl group, and a structural unit derived from a functional group-containing monomer.
(9) The adhesive tape for semiconductor processing according to any one of the above (1) to (8), wherein the buffer layer has a storage modulus at 23℃of 100 to 1500MPa.
(10) The adhesive tape for semiconductor processing according to any one of (1) to (9), wherein the stress relaxation rate of the buffer layer is 70 to 100%.
(11) The adhesive tape for semiconductor processing according to any one of the above (1) to (10), wherein the buffer layer is formed of a buffer layer-forming composition comprising a urethane (meth) acrylate (a 1), a polymerizable compound (a 2) having an alicyclic group or heterocyclic group having 6 to 20 ring-forming atoms, and a polymerizable compound (a 3) having a functional group.
(12) The adhesive tape for semiconductor processing according to the above (11), wherein component (a 2) is a (meth) acrylate containing an alicyclic group, and component (a 3) is a (meth) acrylate containing a hydroxyl group.
(13) A method for manufacturing a semiconductor device includes the steps of:
a step of adhering the adhesive tape for semiconductor processing described in any one of (1) to (12) to the surface of a semiconductor wafer;
forming a groove from the front surface side of the semiconductor wafer or forming a modified region from the front surface or the back surface of the semiconductor wafer into the semiconductor wafer;
a step of adhering the adhesive tape for semiconductor processing to a front surface, grinding the semiconductor wafer having the grooves or modified regions formed therein from a back surface side, and singulating the semiconductor wafer into a plurality of chips with the grooves or modified regions as a starting point; and
And peeling the adhesive tape for semiconductor processing from the plurality of chips.
ADVANTAGEOUS EFFECTS OF INVENTION
In the present invention, chipping or breakage of the semiconductor chip can be prevented from occurring when the semiconductor wafer is ground and singulated into chips in the dicing method before the dicing method and when the adhesive tape is peeled from the semiconductor chip.
Detailed Description
Next, the present invention will be described in more detail.
In the present specification, the term "weight average molecular weight (Mw)" refers to a polystyrene equivalent measured by Gel Permeation Chromatography (GPC), and specifically refers to a value measured by the method described in examples.
For example, the term "acrylate" is used to denote both "acrylate" and "methacrylate", and other similar terms are the same.
The adhesive tape for semiconductor processing (hereinafter also simply referred to as "adhesive tape") of the present invention comprises: the adhesive layer includes a base material, a buffer layer provided on one surface of the base material, and an adhesive layer provided on the other surface of the base material (i.e., the surface opposite to the surface on which the buffer layer is provided).
The adhesive tape is used by being stuck to the surface of a semiconductor wafer via an adhesive layer in a dicing method. That is, the adhesive tape is used by being stuck to the surface of the semiconductor wafer in the following steps: grinding the back surface of the semiconductor wafer having the grooves formed on the surface of the semiconductor wafer or the modified regions formed on the semiconductor wafer, and dicing the semiconductor wafer into semiconductor chips by the grinding.
The adhesive tape of the present invention has a total thickness of 160 [ mu ] m or less, a ratio (D2/D1) of the thickness (D2) of the buffer layer to the thickness (D1) of the substrate of 0.7 or less, and a peeling force of 1000mN/50mm or less against the semiconductor wafer. The present invention can prevent chipping or breakage of a semiconductor chip, which occurs when grinding a semiconductor wafer to singulate the semiconductor chip and peeling the semiconductor chip from the adhesive tape, by setting any one of the total thickness of the adhesive tape, the thickness ratio (D2/D1), and the peeling force to a predetermined value as described above.
On the other hand, when the total thickness of the adhesive tape is made larger than 160 μm, it is difficult to maintain the adhesion performance of the adhesive layer and the impact absorption performance of the buffer layer appropriately while reducing the peeling force. Therefore, when the adhesive tape is peeled from the semiconductor chip, a load is applied to the semiconductor chip, and chip defects are likely to occur.
In addition, from the viewpoint of further reducing the peeling force, the total thickness of the adhesive tape is preferably 155 μm or less, more preferably 145 μm or less. In order to properly function the adhesive layer, the base material, and the buffer layer by properly forming the adhesive layer, the base material, and the buffer layer to have a proper thickness, the total thickness of the adhesive tape is preferably 40 μm or more, more preferably 55 μm or more.
In the present specification, the total thickness of the tape means the total thickness of the layers included in the tape when the tape is attached to a semiconductor wafer and the semiconductor wafer is ground. Therefore, in the case of providing a release sheet that is releasably adhered to the adhesive tape, the thickness of the release sheet is not included in the total thickness. Typically, the total thickness of the adhesive tape is the total thickness of the substrate, the adhesive layer and the buffer layer.
In addition, when the thickness ratio (D2/D1) is larger than 0.7, the ratio of the portions of the adhesive tape having high rigidity becomes small, and therefore, the semiconductor wafer and the semiconductor chip are difficult to be held properly by the base material, and vibration at the time of grinding is difficult to be reduced. Therefore, in the case of dicing into small and thin semiconductor chips by the dicing method, it is difficult to prevent defects of the semiconductor chips that are generated when dicing is performed by back grinding, even if a suitable material for the buffer layer is selected.
In order to reduce chip defects and to make the buffer layer a suitable thickness to improve the buffer performance of the adhesive tape, the thickness ratio (D2/D1) is preferably 0.10 to 0.70, more preferably 0.13 to 0.66.
In addition, if the peeling force of the adhesive tape to the semiconductor wafer is more than 1000mN/50mm, chipping of the semiconductor chip is likely to occur when the adhesive tape is peeled from the semiconductor chip.
In order to prevent chip defects in the adhesive tape during peeling, the peeling force of the adhesive tape is preferably 970mN/50mm or less, more preferably 850mN/50mm or less. The peeling force of the adhesive tape is not particularly limited, but is preferably 300mN/50mm or more, more preferably 450mN/50mm or more, in order to improve the adhesion of the adhesive tape to the semiconductor wafer or the semiconductor chip.
The peeling force of the adhesive tape is a force required for peeling the adhesive tape from the semiconductor wafer after the adhesive layer surface of the adhesive tape is attached to the semiconductor wafer as shown in examples described later. In the case where the adhesive layer is formed of an energy ray curable adhesive as described later, the peeling force is measured by irradiating an adhesive tape attached to a semiconductor wafer with an energy ray and curing the adhesive layer. On the other hand, in the case where the adhesive layer is formed of a non-energy ray curable adhesive, the peel force was measured similarly for the adhesive tape before irradiation with energy rays.
Next, the structure of each member of the adhesive tape of the present invention will be described in more detail.
[ substrate ]
The base material of the adhesive tape includes various resin films, and specifically includes a resin film formed of at least one selected from the group consisting of: polyolefins such as polyethylenes such as Low Density Polyethylene (LDPE), linear Low Density Polyethylene (LLDPE), and High Density Polyethylene (HDPE), polypropylenes, polybutylenes, polybutadiene, polymethylpentene, ethylene-norbornene copolymers, and norbornene resins; ethylene-vinyl acetate copolymers, ethylene- (meth) acrylic acid ester copolymers, and other ethylene copolymers; polyvinyl chloride, polyvinyl chloride copolymers, and the like; polyesters such as polyethylene terephthalate, polyethylene naphthalate, polybutylene terephthalate and wholly aromatic polyesters; polyurethanes, polyimides, polyamides, polycarbonates, fluororesins, polyacetals, modified polyphenylene oxides, polyphenylene sulfides, polysulfones, polyether ketones, acrylic polymers, and the like. In addition, modified membranes such as crosslinked membranes and ionomer membranes may be used. The base material may be a single-layer film of a resin film formed from one or more resins selected from these resins, or may be a laminate film obtained by laminating these resin films in a number of 2 or more.
The substrate is preferably a rigid substrate having a Young's modulus of 1000MPa or more, more preferably 1800 to 30000MPa, and still more preferably 2500 to 6000MPa.
If a rigid substrate having a high Young's modulus is used as the substrate in this way, the holding performance of the adhesive tape with respect to the semiconductor wafer or the semiconductor chip is improved even if the total thickness of the adhesive tape is reduced as described above, and vibration and the like at the time of back grinding can be suppressed, so that chipping or breakage of the semiconductor chip can be easily prevented. In addition, by setting the young's modulus to the above range, the stress at the time of peeling the adhesive tape from the semiconductor chip can be reduced, and chip chipping or breakage generated at the time of peeling the adhesive tape can be easily prevented. In addition, the workability in attaching the adhesive tape to the semiconductor wafer can be improved.
Here, the rigid substrate having a young's modulus of 1000MPa or more may be suitably selected from the above resin films, and examples thereof include films of polyesters such as polyethylene terephthalate, polyethylene naphthalate, polybutylene terephthalate, and wholly aromatic polyesters, polyimides, polyamides, polycarbonates, polyacetals, modified polyphenylene oxides, polyphenylene sulfides, polysulfones, polyether ketones, biaxially oriented polypropylene, and the like.
Among these resin films, one or more films selected from the group consisting of polyester films, polyamide films, polyimide films, and biaxially oriented polypropylene films are preferable, polyester films are more preferable, and polyethylene terephthalate films are further preferable.
The thickness (D1) of the substrate is preferably 110 μm or less, more preferably 15 to 110 μm, and still more preferably 20 to 105 μm. When the thickness of the base material is 110 μm or less, the total thickness of the adhesive tape, the thickness ratio (D2/D1), and the peel force of the adhesive tape can be easily adjusted to the predetermined values. In addition, by making the thickness of the base material 15 μm or more, the base material easily functions as a support for the adhesive tape.
In addition, the base material may contain plasticizers, lubricants, infrared absorbers, ultraviolet absorbers, fillers, colorants, antistatic agents, antioxidants, catalysts, and the like, within a range that does not impair the effects of the present invention. The substrate may be transparent or opaque, and may be colored or vapor deposited as necessary.
In order to improve adhesion to at least one of the buffer layer and the pressure-sensitive adhesive layer, at least one surface of the substrate may be subjected to an adhesion treatment such as corona treatment. The base material may have the resin film described above, and an easy-to-adhere layer formed on at least one surface of the resin film.
The composition for forming an easy-to-adhere layer is not particularly limited, and examples thereof include compositions containing a polyester resin, a urethane resin, a polyester urethane resin, an acrylic resin, and the like. The composition for forming an easy-to-bond layer may contain a crosslinking agent, a photopolymerization initiator, an antioxidant, a softener (plasticizer), a filler, an anticorrosive agent, a pigment, a dye, and the like, as necessary.
The thickness of the easy-to-adhere layer is preferably 0.01 to 10. Mu.m, more preferably 0.03 to 5. Mu.m. Since the thickness of the easy-to-adhere layer is smaller than the thickness of the base material and the material thereof is also soft, the influence on the young's modulus is small, and in the case of having the easy-to-adhere layer, the young's modulus of the base material is substantially the same as the young's modulus of the resin film.
[ buffer layer ]
The buffer layer mitigates vibration caused by grinding of the semiconductor wafer, thereby preventing breakage and chipping of the semiconductor wafer. The semiconductor wafer to which the adhesive tape is attached is set on the vacuum table at the time of back grinding, but the adhesive tape can be easily and appropriately held on the vacuum table by providing the buffer layer.
The storage modulus of the buffer layer of the present invention at 23℃is preferably 100 to 1500MPa, more preferably 200 to 1200MPa. The stress relaxation rate of the buffer layer is preferably 70 to 100%, more preferably 78 to 98%.
The buffer layer has the storage modulus and the stress relaxation rate in the above-described ranges, and thus the buffer layer has an improved effect of absorbing irregularities of fine foreign matters interposed between the semiconductor wafer to which the adhesive tape is attached and a chuck table (chuck table), and vibrations and shocks of the grindstone generated during back grinding. Therefore, as described above, even when the thickness ratio (D2/D1) is 0.7 or less and the thickness of the buffer layer is small, chip defects generated during back grinding can be easily prevented.
The maximum value of dynamic viscoelasticity tan delta (hereinafter, also simply referred to as "maximum value of tan delta") of the buffer layer at-5 to 120 ℃ is preferably 0.7 or more, more preferably 0.8 or more, and further preferably 1.0 or more. The upper limit of the maximum value of tan δ is not particularly limited, and is usually 2.0 or less.
If the maximum value of tan δ of the buffer layer is 0.7 or more, the buffer layer has an improved effect of absorbing vibration and impact of the grindstone generated at the time of back grinding. Therefore, even if the semiconductor wafer or the singulated semiconductor chips are ground to be extremely thin in the dicing method, chipping or the like is easily prevented from occurring at corners or the like of the chips.
The tan δ is referred to as loss tangent, defined as "loss modulus/storage modulus", and is a value measured in response to stress such as tensile stress and torsional stress applied to an object by a dynamic viscoelasticity measuring device, specifically, a value measured by the method described in examples.
The thickness (D2) of the buffer layer is preferably 8 to 40. Mu.m, more preferably 10 to 35. Mu.m. By setting the thickness of the buffer layer to 8 μm or more, the buffer layer can appropriately buffer vibration at the time of back grinding. In addition, the total thickness of the adhesive tape and the thickness ratio (D2/D1) can be easily adjusted to the above given values by 40 μm or less.
The buffer layer is preferably a layer formed from a buffer layer forming composition containing an energy ray polymerizable compound. The buffer layer can be cured by irradiation with an energy ray by containing an energy ray polymerizable compound. The "energy beam" means ultraviolet rays, electron beams, or the like, and ultraviolet rays are preferably used.
More specifically, the buffer layer-forming composition preferably contains a urethane (meth) acrylate (a 1) and a polymerizable compound (a 2) having an alicyclic group or heterocyclic group having 6 to 20 ring-forming atoms. The composition for forming a buffer layer can easily be obtained by containing the above 2 components, and the maximum values of the elastic modulus of the buffer layer, the stress relaxation rate of the buffer layer, and tan δ are in the above-described ranges. From the above viewpoint, the composition for forming a buffer layer more preferably contains a polymerizable compound (a 3) having a functional group in addition to the above components (a 1) and (a 2).
The composition for forming a buffer layer further preferably contains a photopolymerization initiator in addition to the components (a 1) and (a 2) or (a 1) to (a 3), and may contain other additives and resin components within a range that does not impair the effects of the present invention.
Hereinafter, each component contained in the composition for forming a buffer layer will be described in detail.
(urethane (meth) acrylate (a 1))
The urethane (meth) acrylate (a 1) is a compound having at least a (meth) acryloyl group and a urethane bond, and has a property of being polymerized and cured by irradiation with an energy ray. The urethane (meth) acrylate (a 1) is a polymer such as an oligomer.
The weight average molecular weight (Mw) of the component (a 1) is preferably 1,000 ～ 100,000, more preferably
2,000 to 60,000, more preferably 3,000 to 20,000. The number of (meth) acryloyl groups (hereinafter also referred to as "the number of functional groups") in the component (a 1) may be monofunctional, difunctional or 3 or more, but is preferably monofunctional or difunctional.
The component (a 1) can be obtained, for example, by reacting a (meth) acrylate having a hydroxyl group with a terminal isocyanate urethane prepolymer obtained by reacting a polyol compound with a polyisocyanate compound. The component (a 1) may be used alone or in combination of 2 or more.
The polyol compound as the raw material of the component (a 1) is not particularly limited as long as it has 2 or more hydroxyl groups. Specific examples of the polyol compound include alkylene glycol, polyether polyol, polyester polyol, and polycarbonate polyol. Among these, polyester polyols are preferred.
The polyol compound may be any of a difunctional diol, a 3-functional triol, and a 4-functional or higher polyol, and is preferably a difunctional diol, and more preferably a polyester diol.
Examples of the polyisocyanate compound include: aliphatic polyisocyanates such as tetramethylene diisocyanate, hexamethylene diisocyanate, and trimethylhexamethylene diisocyanate; alicyclic diisocyanates such as isophorone diisocyanate, norbornane diisocyanate, dicyclohexylmethane-4, 4' -diisocyanate, dicyclohexylmethane-2, 4' -diisocyanate, and ω, ω ' -diisocyanate-dimethylcyclohexane; aromatic diisocyanates such as 4,4' -diphenylmethane diisocyanate, toluene diisocyanate, xylylene diisocyanate, dimethylbiphenyl diisocyanate, tetramethylene xylylene diisocyanate, naphthalene-1, 5-diisocyanate, and the like.
Among these, isophorone diisocyanate, hexamethylene diisocyanate, and xylylene diisocyanate are preferable.
The urethane (meth) acrylate (a 1) can be obtained by reacting a (meth) acrylate having a hydroxyl group with a terminal isocyanate urethane prepolymer obtained by reacting the above-mentioned polyol compound with a polyisocyanate compound. The (meth) acrylate having a hydroxyl group is not particularly limited as long as it is a compound having at least a hydroxyl group and a (meth) acryloyl group in 1 molecule.
Specific examples of the (meth) acrylate having a hydroxyl group include: hydroxyalkyl (meth) acrylates such as 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 4-hydroxycyclohexyl (meth) acrylate, 5-hydroxycyclooctyl (meth) acrylate, 2-hydroxy-3-phenoxypropyl (meth) acrylate, pentaerythritol tri (meth) acrylate, polyethylene glycol mono (meth) acrylate, polypropylene glycol mono (meth) acrylate, and the like; hydroxy group-containing (meth) acrylamides such as N-methylol (meth) acrylamides; and a reactant obtained by reacting (meth) acrylic acid with vinyl alcohol, vinyl phenol, and a glycidyl ester of bisphenol A.
Among these, hydroxyalkyl (meth) acrylates are preferable, and 2-hydroxyethyl (meth) acrylate is more preferable.
As the conditions for reacting the terminal isocyanate urethane prepolymer and the (meth) acrylate having a hydroxyl group, the conditions for reacting at 60 to 100℃for 1 to 4 hours in the presence of a solvent and a catalyst added as required are preferable.
The content of the component (a 1) in the buffer layer-forming composition is preferably 10 to 70% by mass, more preferably 20 to 60% by mass, still more preferably 25 to 55% by mass, and still more preferably 30 to 50% by mass, relative to the total amount (100% by mass) of the buffer layer-forming composition.
(polymerizable Compound (a 2) having an alicyclic group or heterocyclic group having 6 to 20 ring members)
The component (a 2) is a polymerizable compound having an alicyclic group or heterocyclic group having 6 to 20 ring members, and preferably a compound having at least 1 (meth) acryloyl group. By using this component (a 2), the film forming property of the obtained composition for forming a buffer layer can be improved.
The number of ring-forming atoms of the alicyclic group or heterocyclic group of the component (a 2) is preferably 6 to 20, more preferably 6 to 18, still more preferably 6 to 16, still more preferably 7 to 12. Examples of the atoms forming the ring structure of the heterocyclic group include carbon atoms, nitrogen atoms, oxygen atoms, sulfur atoms, and the like.
The number of ring-forming atoms means the number of atoms constituting the ring itself in the compound having a ring-shaped structure, and atoms not constituting the ring (for example, hydrogen atoms bonded to atoms constituting the ring) and atoms contained in the substituent in the case where the ring is substituted with a substituent are not included in the number of ring-forming atoms.
Specific examples of the component (a 2) include: alicyclic group-containing (meth) acrylates such as isobornyl (meth) acrylate, dicyclopentenyl (meth) acrylate, dicyclopentenyloxy ethyl (meth) acrylate, cyclohexyl (meth) acrylate, adamantyl (meth) acrylate, and the like; heterocyclic group-containing (meth) acrylates such as tetrahydrofurfuryl (meth) acrylate and (meth) acryloylmorpholine; etc.
The component (a 2) may be used alone or in combination of 2 or more.
Among these, (meth) acrylic esters containing an alicyclic group are preferable, and isobornyl (meth) acrylate is more preferable.
The content of the component (a 2) in the buffer layer-forming composition is preferably 10 to 70% by mass, more preferably 20 to 60% by mass, still more preferably 25 to 55% by mass, and still more preferably 30 to 50% by mass, relative to the total amount (100% by mass) of the buffer layer-forming composition.
(polymerizable Compound (a 3) having functional group)
The component (a 3) is a polymerizable compound having a functional group such as a hydroxyl group, an epoxy group, an amide group, or an amino group, and more preferably a compound having at least 1 (meth) acryloyl group.
The component (a 3) has good compatibility with the component (a 1), and the viscosity of the composition for forming a buffer layer can be easily adjusted to a proper range. In addition, the elastic modulus and tan delta value of the buffer layer formed from the composition can be easily controlled within the above ranges, and the buffer layer has good buffer performance even when the buffer layer is thin.
Examples of the component (a 3) include: hydroxyl group-containing (meth) acrylates, epoxy group-containing compounds, amide group-containing compounds, amino group-containing (meth) acrylates, and the like.
Examples of the hydroxyl group-containing (meth) acrylate include: 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 3-hydroxypropyl (meth) acrylate, 2-hydroxybutyl (meth) acrylate, 3-hydroxybutyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, phenyl hydroxypropyl (meth) acrylate, and the like.
Examples of the epoxy group-containing compound include: among these, glycidyl (meth) acrylate, methyl glycidyl (meth) acrylate, allyl glycidyl ether, and the like, epoxy group-containing (meth) acrylates such as glycidyl (meth) acrylate and methyl glycidyl (meth) acrylate are preferable.
Examples of the amide group-containing compound include: (meth) acrylamide, N-dimethyl (meth) acrylamide, N-butyl (meth) acrylamide, N-methylol propane (meth) acrylamide, N-methoxymethyl (meth) acrylamide, N-butoxymethyl (meth) acrylamide, and the like.
Examples of the amino group-containing (meth) acrylate include: a (meth) acrylate having a primary amino group, a (meth) acrylate having a secondary amino group, a (meth) acrylate having a tertiary amino group, and the like.
Among these, (meth) acrylic esters containing hydroxyl groups are preferable, and (meth) acrylic esters containing hydroxyl groups having an aromatic ring such as phenyl hydroxypropyl (meth) acrylic esters are more preferable.
The component (a 3) may be used alone or in combination of 2 or more.
In order to easily bring the elastic modulus and the stress relaxation rate of the buffer layer into the above-described ranges and to improve the film forming property of the buffer layer-forming composition, the content of the component (a 3) in the buffer layer-forming composition is preferably 5 to 40% by mass, more preferably 7 to 35% by mass, still more preferably 10 to 30% by mass, and still more preferably 13 to 25% by mass, relative to the total amount (100% by mass) of the buffer layer-forming composition.
The content ratio of the component (a 2) to the component (a 3) [ a 2)/(a 3) ] in the composition for forming a buffer layer is preferably 0.5 to 3.0, more preferably 1.0 to 3.0, still more preferably 1.3 to 3.0, and still more preferably 1.5 to 2.8.
(polymerizable Compounds other than Components (a 1) to (a 3))
The buffer layer-forming composition may further contain other polymerizable compounds than the above-mentioned components (a 1) to (a 3) within a range that does not impair the effects of the present invention.
Examples of the other polymerizable compound include: alkyl (meth) acrylate having an alkyl group having 1 to 20 carbon atoms; vinyl compounds such as styrene, hydroxyethyl vinyl ether, hydroxybutyl vinyl ether, N-vinylformamide, N-vinylpyrrolidone, and N-vinylcaprolactam: etc. These other polymerizable compounds may be used alone or in combination of 2 or more.
The content of the other polymerizable compound in the composition for forming a buffer layer is preferably 0 to 20% by mass, more preferably 0 to 10% by mass, still more preferably 0 to 5% by mass, and still more preferably 0 to 2% by mass.
(photopolymerization initiator)
From the viewpoints of shortening the polymerization time by light irradiation and reducing the amount of light irradiation when forming the buffer layer, it is preferable that the composition for forming the buffer layer further contains a photopolymerization initiator.
Examples of the photopolymerization initiator include: benzoin compounds, acetophenone compounds, acylphosphine oxide compounds, titanocene compounds, thioxanthone compounds, peroxide compounds, and photosensitizers such as amines and quinones, etc., and more specifically, examples thereof include: 1-hydroxycyclohexyl phenyl ketone, 2-hydroxy-2-methyl-1-phenylpropane-1-one, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzyl phenyl sulfide, tetramethylthiuram monosulfide, azobisisobutyronitrile, dibenzyl, butanedione, 8-chloroanthraquinone, bis (2, 4, 6-trimethylbenzoyl) phenylphosphine oxide, and the like.
These photopolymerization initiators may be used alone or in combination of 2 or more.
The content of the photopolymerization initiator in the composition for forming a buffer layer is preferably 0.05 to 15 parts by mass, more preferably 0.1 to 10 parts by mass, and even more preferably 0.3 to 5 parts by mass, relative to 100 parts by mass of the total amount of the energy ray-polymerizable compounds.
(other additives)
Other additives may be contained in the composition for forming a buffer layer within a range not impairing the effect of the present invention. Examples of the other additives include: antistatic agents, antioxidants, softeners (plasticizers), fillers, rust inhibitors, pigments, dyes, and the like. When these additives are blended, the content of each additive in the composition for forming a buffer layer is preferably 0.01 to 6 parts by mass, more preferably 0.1 to 3 parts by mass, relative to 100 parts by mass of the total amount of the energy ray polymerizable compounds.
(resin component)
The composition for forming a buffer layer may further contain a resin component within a range that does not impair the effects of the present invention. Examples of the resin component include: and polyolefin resins such as polythiol resins, polybutene, polybutadiene and polymethylpentene, and thermoplastic resins such as styrene copolymers.
The content of these resin components in the composition for forming a buffer layer is preferably 0 to 20% by mass, more preferably 0 to 10% by mass, still more preferably 0 to 5% by mass, and still more preferably 0 to 2% by mass.
[ adhesive layer ]
The adhesive layer preferably has an elastic modulus at 23℃of 0.10 to 0.50 MPa. A circuit or the like is formed on the surface of a semiconductor wafer and generally has irregularities. When the elastic modulus of the adhesive tape is in the above range, the surface roughness of the wafer can be sufficiently brought into contact with the adhesive layer and the adhesiveness of the adhesive layer can be suitably exhibited when the adhesive tape is adhered to the surface of the wafer having the roughness. Therefore, the adhesive tape can be reliably fixed to the semiconductor wafer, and the wafer surface can be suitably protected during back grinding. From the above viewpoints, the elastic modulus of the adhesive layer is more preferably 0.12 to 0.35MPa. The elastic modulus of the pressure-sensitive adhesive layer, when the pressure-sensitive adhesive layer is formed of an energy ray curable pressure-sensitive adhesive, means the elastic modulus before curing by irradiation with an energy ray, and is a value of the storage modulus measured by a measurement method of examples described later.
The thickness (D3) of the pressure-sensitive adhesive layer is preferably 70 μm or less, more preferably less than 40 μm, further preferably 35 μm or less, particularly preferably 30 μm or less. The thickness (D3) is preferably 5 μm or more, more preferably 10 μm or more. When the pressure-sensitive adhesive layer is thinned as described above, the total thickness of the tape can be easily set to 160 μm or less as described above. In addition, in the adhesive tape, the ratio of the portions having low rigidity can be reduced, and therefore, chipping of the semiconductor chip generated at the time of back grinding can be easily further prevented.
The adhesive layer is formed of, for example, an acrylic adhesive, a urethane adhesive, a rubber adhesive, a silicone adhesive, or the like, but an acrylic adhesive is preferable.
The adhesive layer is preferably formed of an energy ray curable adhesive. By forming the adhesive layer from an energy ray-curable adhesive, the elastic modulus at 23 ℃ before curing by irradiation with an energy ray can be set to the above range, and the peeling force after curing can be easily set to 1000mN/50mm or less.
As the energy ray curable adhesive, for example, an energy ray curable adhesive composition (hereinafter, also referred to as "X-type adhesive composition") containing an energy ray curable compound other than an adhesive resin in addition to a non-energy ray curable adhesive resin (also referred to as "adhesive resin I") can be used. As the energy ray curable adhesive, an adhesive composition (hereinafter, also referred to as "Y-type adhesive composition") containing an energy ray curable adhesive resin (hereinafter, also referred to as "adhesive resin II") having an unsaturated group introduced into a side chain of a non-energy ray curable adhesive resin as a main component and containing no energy ray curable compound other than the adhesive resin may be used.
As the energy ray-curable adhesive, a combination of X-type and Y-type, that is, an energy ray-curable adhesive composition (hereinafter, also referred to as "XY-type adhesive composition") containing an energy ray-curable compound other than the energy ray-curable adhesive resin II may be used.
Among these, an XY type adhesive composition is preferably used. By using the XY type adhesive composition, not only has sufficient adhesive properties before curing, but also can sufficiently reduce the peeling force to the semiconductor wafer after curing.
The adhesive may be formed of a non-energy ray-curable adhesive composition which does not cure even when irradiated with energy rays. The non-energy ray curable adhesive composition is a composition containing at least the non-energy ray curable adhesive resin I and not containing the above-mentioned energy ray curable adhesive resin II and energy ray curable compound.
In the following description, the term "adhesive resin" is used to refer to one or both of the adhesive resin I and the adhesive resin II described above. Specific examples of the adhesive resin include acrylic resins, urethane resins, rubber resins, silicone resins, and the like, but acrylic resins are preferable.
Hereinafter, an acrylic adhesive using an acrylic resin as an adhesive resin will be described in more detail.
The acrylic polymer (b) is used for the acrylic resin. The acrylic polymer (b) is obtained by polymerizing a monomer containing at least an alkyl (meth) acrylate, and contains a structural unit derived from the alkyl (meth) acrylate. The alkyl (meth) acrylate includes alkyl (meth) acrylates having 1 to 20 carbon atoms as an alkyl group, and the alkyl group may be a linear alkyl group or a branched alkyl group. Specific examples of the alkyl (meth) acrylate include: methyl (meth) acrylate, ethyl (meth) acrylate, isopropyl (meth) acrylate, n-propyl (meth) acrylate, n-butyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, n-octyl (meth) acrylate, isooctyl (meth) acrylate, nonyl (meth) acrylate, decyl (meth) acrylate, undecyl (meth) acrylate, dodecyl (meth) acrylate, and the like. The alkyl (meth) acrylate may be used alone or in combination of 2 or more.
In addition, from the viewpoint of improving the adhesive force of the adhesive layer, the acrylic polymer (b) preferably contains a structural unit derived from an alkyl (meth) acrylate having 4 or more carbon atoms in the alkyl group. The number of carbon atoms of the alkyl (meth) acrylate is preferably 4 to 12, more preferably 4 to 6. The alkyl (meth) acrylate having an alkyl group with 4 or more carbon atoms is preferably an alkyl acrylate.
In the acrylic polymer (b), the alkyl (meth) acrylate having an alkyl group with 4 or more carbon atoms is preferably 40 to 98% by mass, more preferably 45 to 95% by mass, and still more preferably 50 to 90% by mass, based on the total amount of monomers constituting the acrylic polymer (b) (hereinafter also simply referred to as "total amount of monomers").
In order to adjust the elastic modulus and the adhesive property of the adhesive layer, the acrylic polymer (b) is preferably a copolymer containing a structural unit derived from an alkyl (meth) acrylate having 1 to 3 carbon atoms in addition to a structural unit derived from an alkyl (meth) acrylate having 4 or more carbon atoms in the alkyl group. The alkyl (meth) acrylate is preferably an alkyl (meth) acrylate having 1 or 2 carbon atoms, more preferably methyl (meth) acrylate, and most preferably methyl methacrylate. In the acrylic polymer (b), the alkyl (meth) acrylate having 1 to 3 carbon atoms in the alkyl group is preferably 1 to 30% by mass, more preferably 3 to 26% by mass, and still more preferably 6 to 22% by mass, based on the total amount of the monomers.
The acrylic polymer (b) preferably has a structural unit derived from a functional group-containing monomer in addition to the structural unit derived from the alkyl (meth) acrylate described above. Examples of the functional group-containing monomer include a hydroxyl group, a carboxyl group, an amino group, and an epoxy group. The functional group-containing monomer may be reacted with a crosslinking agent described later to become a crosslinking origin or may be reacted with an unsaturated group-containing compound to introduce an unsaturated group into the side chain of the acrylic polymer (b).
Examples of the functional group-containing monomer include a hydroxyl group-containing monomer, a carboxyl group-containing monomer, an amino group-containing monomer, and an epoxy group-containing monomer. These monomers may be used alone or in combination of 2 or more. Of these, hydroxyl group-containing monomers and carboxyl group-containing monomers are preferred, and hydroxyl group-containing monomers are more preferred.
Examples of the hydroxyl group-containing monomer include: hydroxyalkyl (meth) acrylates such as 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 3-hydroxypropyl (meth) acrylate, 2-hydroxybutyl (meth) acrylate, 3-hydroxybutyl (meth) acrylate, and 4-hydroxybutyl (meth) acrylate; unsaturated alcohols such as vinyl alcohol and allyl alcohol.
Examples of the carboxyl group-containing monomer include: ethylenically unsaturated monocarboxylic acids such as (meth) acrylic acid and crotonic acid; ethylenically unsaturated dicarboxylic acids such as fumaric acid, itaconic acid, maleic acid and citraconic acid, anhydrides thereof, and 2-carboxyethyl methacrylate.
The functional group monomer is preferably 1 to 35% by mass, more preferably 3 to 32% by mass, and still more preferably 6 to 30% by mass, based on the total amount of the monomers constituting the acrylic polymer (b).
The acrylic polymer (b) may contain, in addition to the above, structural units derived from monomers copolymerizable with the above acrylic monomers, such as styrene, α -methylstyrene, vinyltoluene, vinyl formate, vinyl acetate, acrylonitrile, and acrylamide.
The acrylic polymer (b) may be used as the non-energy ray curable adhesive resin I (acrylic resin). The energy ray-curable acrylic resin may be an acrylic resin obtained by reacting a compound having a photopolymerizable unsaturated group (also referred to as an unsaturated group-containing compound) with the functional group of the acrylic polymer (b).
The unsaturated group-containing compound is a compound having both a substituent capable of bonding to the functional group of the acrylic polymer (b) and a photopolymerizable unsaturated group. Examples of the photopolymerizable unsaturated group include a (meth) acryloyl group, a vinyl group, and an allyl group, and a (meth) acryloyl group is preferable.
Examples of the substituent capable of bonding to the functional group of the unsaturated group-containing compound include an isocyanate group and a glycidyl group. Thus, examples of the unsaturated group-containing compound include: (meth) acryloyloxyethyl isocyanate, (meth) glycidyl acrylate, and the like.
The unsaturated group-containing compound is preferably reacted with a part of the functional groups of the acrylic polymer (b), specifically, 50 to 98 mol% of the functional groups of the acrylic polymer (b), and more preferably 55 to 93 mol% of the functional groups of the acrylic polymer (b). In this way, by leaving a part of the functional groups in the energy ray-curable acrylic resin unreacted with the unsaturated group-containing compound, crosslinking by the crosslinking agent is facilitated.
The weight average molecular weight (Mw) of the acrylic resin is preferably 30 to 160,40 to 140,50 to 120,000.
(energy ray-curable Compound)
The energy ray-curable compound contained in the X-type or XY-type adhesive composition is preferably a monomer or oligomer having an unsaturated group in the molecule and capable of being polymerized and cured by irradiation with energy rays.
Examples of such an energy ray-curable compound include: polyvalent (meth) acrylate monomers such as trimethylolpropane tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol hexa (meth) acrylate, 1, 4-butanediol di (meth) acrylate, and 1, 6-hexanediol (meth) acrylate, urethane (meth) acrylate, polyester (meth) acrylate, polyether (meth) acrylate, and epoxy (meth) acrylate.
Among these, urethane (meth) acrylate oligomers are preferable from the viewpoint of having a relatively high molecular weight and being less likely to reduce the elastic modulus of the adhesive layer.
The molecular weight (weight average molecular weight in the case of an oligomer) of the energy ray curable compound is preferably 100 to 12000, more preferably 200 to 10000, further preferably 400 to 8000, still further preferably 600 to 6000.
The content of the energy ray-curable compound in the X-type adhesive composition is preferably 40 to 200 parts by mass, more preferably 50 to 150 parts by mass, and even more preferably 60 to 90 parts by mass, relative to 100 parts by mass of the adhesive resin.
On the other hand, the content of the energy ray-curable compound in the XY-type adhesive composition is preferably 1 to 30 parts by mass, more preferably 2 to 20 parts by mass, and even more preferably 3 to 15 parts by mass, relative to 100 parts by mass of the adhesive resin. In the XY-type adhesive composition, since the adhesive resin is energy ray curable, even if the content of the energy ray curable compound is small, the peeling force can be sufficiently reduced after irradiation with the energy ray.
(crosslinking agent)
The adhesive composition preferably further contains a crosslinking agent. The crosslinking agent is, for example, a component that reacts with a functional group derived from a functional group monomer that the adhesive resin has to crosslink the adhesive resins with each other. Examples of the crosslinking agent include: isocyanate-based crosslinking agents such as toluene diisocyanate, hexamethylene diisocyanate, xylylene diisocyanate, and adducts thereof; epoxy crosslinking agents such as ethylene glycol glycidyl ether; aziridine crosslinking agents such as hexa [1- (2-methyl) aziridinyl ] triphosphazepine; chelate crosslinking agents such as aluminum chelates; etc. These crosslinking agents may be used alone or in combination of 2 or more.
Among these, the isocyanate-based crosslinking agent is preferable from the viewpoints of improving the cohesive force and improving the adhesive force, easy acquisition, and the like.
The blending amount of the crosslinking agent is preferably 0.01 to 10 parts by mass, more preferably 0.03 to 7 parts by mass, and still more preferably 0.05 to 4 parts by mass, relative to 100 parts by mass of the adhesive resin, from the viewpoint of promoting the crosslinking reaction.
(photopolymerization initiator)
In the case where the adhesive composition is energy ray curable, the adhesive composition preferably further contains a photopolymerization initiator. By containing the photopolymerization initiator, the curing reaction of the adhesive composition can be sufficiently performed even with an energy line having a relatively low energy such as ultraviolet rays.
Examples of the photopolymerization initiator include: benzoin compounds, acetophenone compounds, acylphosphine oxide compounds, titanocene compounds, thioxanthone compounds, peroxide compounds, and photosensitizers such as amines and quinones, etc., and more specifically, examples thereof include: 1-hydroxycyclohexyl phenyl ketone, 2-hydroxy-2-methyl-1-phenylpropane-1-one, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzyl phenyl sulfide, tetramethylthiuram monosulfide, azobisisobutyronitrile, dibenzyl, butanedione, 8-chloroanthraquinone, bis (2, 4, 6-trimethylbenzoyl) phenylphosphine oxide, and the like.
These photopolymerization initiators may be used alone or in combination of 2 or more.
The amount of the photopolymerization initiator to be blended is preferably 0.01 to 10 parts by mass, more preferably 0.03 to 5 parts by mass, and still more preferably 0.05 to 5 parts by mass, relative to 100 parts by mass of the adhesive resin.
(other additives)
The adhesive composition may further contain other additives within a range not impairing the effect of the present invention. Examples of the other additives include: antistatic agents, antioxidants, softeners (plasticizers), fillers, rust inhibitors, pigments, dyes, and the like. In the case of blending these additives, the blending amount of the additives is preferably 0.01 to 6 parts by mass relative to 100 parts by mass of the adhesive resin.
In addition, from the viewpoint of improving the coatability to the substrate or the release sheet, the adhesive composition may be further diluted with an organic solvent to prepare a solution of the adhesive composition.
Examples of the organic solvent include: methyl ethyl ketone, acetone, ethyl acetate, tetrahydrofuran, di
An alkane, cyclohexane, n-hexane,Toluene, xylene, n-propanol, isopropanol, and the like.
The organic solvent may be used as it is in the synthesis of the adhesive resin, or 1 or more organic solvents other than the organic solvent used in the synthesis may be added so that a solution of the adhesive composition can be uniformly applied.
[ Release sheet ]
A release sheet may be attached to the surface of the adhesive tape. Specifically, the release sheet is attached to at least one of the surface of the adhesive layer of the adhesive tape and the surface of the buffer layer. The release sheet is adhered to the surface to protect the pressure-sensitive adhesive layer and the buffer layer. The release sheet is releasably attached to the adhesive tape and is peeled off from the adhesive tape before the adhesive tape is used (i.e., before the wafer back surface is ground).
As the release sheet, a release sheet having at least one surface subjected to a release treatment may be used, and specifically, a release sheet obtained by coating a release agent on the surface of a base material for a release sheet may be used.
The base material for the release sheet is preferably a resin film, and examples of the resin constituting the resin film include: polyethylene terephthalate resin, polybutylene terephthalate resin, polyester resin films such as polyethylene naphthalate resin, polyolefin resins such as polypropylene resin and polyethylene resin, and the like. Examples of the release agent include: and rubber elastomers such as silicone resins, olefin resins, isoprene resins, and butadiene resins, long-chain alkyl resins, alkyd resins, and fluorine resins.
The thickness of the release sheet is not particularly limited, but is preferably 10 to 200. Mu.m, more preferably 20 to 150. Mu.m.
(method for producing adhesive tape)
The method for producing the adhesive tape of the present invention is not particularly limited, and the adhesive tape can be produced by a known method.
For example, the buffer layer provided on the release sheet and the adhesive layer provided on the release sheet may be bonded to both surfaces of the base material, respectively, to thereby produce an adhesive tape having release sheets bonded to both surfaces of the buffer layer and the adhesive layer. The release sheets attached to both surfaces of the buffer layer and the pressure-sensitive adhesive layer may be removed by being peeled off before the pressure-sensitive adhesive tape is used.
As a method for forming the buffer layer or the pressure-sensitive adhesive layer on the release sheet, a known coating method may be used to directly coat the buffer layer-forming composition or the pressure-sensitive adhesive (pressure-sensitive adhesive composition) on the release sheet to form a coating film, and then the coating film may be irradiated with an energy ray or dried by heating to form the buffer layer or the pressure-sensitive adhesive layer.
The buffer layer and the pressure-sensitive adhesive layer may be formed by directly applying the buffer layer forming composition and the pressure-sensitive adhesive (pressure-sensitive adhesive composition) to both surfaces of the substrate, respectively. The buffer layer and the pressure-sensitive adhesive layer may be formed by directly applying a composition for forming a buffer layer or a pressure-sensitive adhesive (pressure-sensitive adhesive composition) to one surface of a substrate, and the pressure-sensitive adhesive layer or the buffer layer provided on the release sheet may be bonded to the other surface of the substrate.
Examples of the method for applying the composition and the adhesive for forming the buffer layer include: spin coating, spray coating, bar coating, blade coating, roll coating, blade coating, die coating, gravure coating, and the like. In order to improve the coatability, the buffer layer-forming composition and the adhesive composition may be mixed with an organic solvent to prepare a solution, and then coated on the release sheet.
When the composition for forming a buffer layer contains an energy ray polymerizable compound, the composition for forming a buffer layer is preferably cured by irradiation of an energy ray on a coating film of the composition for forming a buffer layer, thereby forming a buffer layer. The curing of the buffer layer may be performed by one-time curing treatment or may be performed in a plurality of times. For example, the coating film on the release sheet may be completely cured to form the buffer layer, and then the film may be attached to the substrate, or the film may be attached to the substrate without completely curing the coating film to form a buffer layer forming film in a semi-cured state, and then the film may be completely cured by irradiation with an energy beam again to form the buffer layer. The energy beam irradiated during the curing treatment is preferably ultraviolet light. In the curing, the coating film of the composition for forming a buffer layer may be exposed, but it is preferable that the coating film is covered with a release sheet or a base material, and the coating film is cured by irradiation with an energy ray in a state where the coating film is not exposed.
[ method for manufacturing semiconductor device ]
The adhesive tape of the present invention is used for grinding the back surface of a semiconductor wafer by adhering the adhesive tape to the front surface of the semiconductor wafer in the dicing method as described above, and more specifically, is used for a method for manufacturing a semiconductor device.
Specifically, the method for manufacturing a semiconductor device according to the present invention includes at least the following steps 1 to 4.
Step 1: a step of adhering the adhesive tape to the surface of the semiconductor wafer
Step 2: forming a groove from the front surface side of the semiconductor wafer or forming a modified region from the front surface or the back surface of the semiconductor wafer into the semiconductor wafer
And step 3: a step of bonding an adhesive tape to the front surface and grinding the semiconductor wafer having the grooves or modified regions formed therein from the back surface side, and singulating the semiconductor wafer into a plurality of chips starting from the grooves or modified regions
And 4, step 4: a step of peeling the adhesive tape from the singulated semiconductor wafer (i.e., the plurality of semiconductor chips)
Each step of the method for manufacturing a semiconductor device will be described in detail below.
(Process 1)
In step 1, the adhesive tape of the present invention is adhered to the surface of a semiconductor wafer via an adhesive layer. This step may be performed before step 2 described later, or may be performed after step 2. For example, in the case of forming a modified region on a semiconductor wafer, it is preferable to perform step 1 before step 2. On the other hand, in the case where grooves are formed on the surface of the semiconductor wafer by dicing or the like, step 1 is performed after step 2. That is, in this step 1, an adhesive tape is attached to the surface of the wafer having grooves formed in the step 2 described later.
The semiconductor wafer used in the present manufacturing method may be a silicon wafer, a wafer of gallium, arsenic, or the like, or a glass wafer. The thickness of the semiconductor wafer before grinding is not particularly limited, but is usually about 500 to 1000 μm. In addition, a semiconductor wafer is generally formed with a circuit on its surface. The circuit can be formed on the wafer surface by various methods including a conventional general method such as an etching method and a lift-off method.
(Process 2)
In step 1, a groove is formed from the front surface side of the semiconductor wafer, or a modified region is formed from the front surface or the back surface of the semiconductor wafer into the semiconductor wafer.
The grooves formed in this step are grooves having a depth smaller than the thickness of the semiconductor wafer. The grooves may be formed by dicing using a conventionally known wafer dicing apparatus or the like. In step 3 described later, the semiconductor wafer is divided into a plurality of semiconductor chips along the grooves.
The modified region is a fragile portion of the semiconductor wafer, and is a region where the semiconductor wafer is thinned by grinding in the grinding step or broken by a force or the like applied by grinding, and thus becomes a starting point for singulation into semiconductor chips. That is, in step 2, grooves and modified regions are formed along dividing lines when dividing a semiconductor wafer into semiconductor chips in step 3 described later.
The modified region is formed in the semiconductor wafer by irradiating the semiconductor wafer with laser light focused on the inside of the semiconductor wafer. The irradiation of the laser light may be performed from the front surface side of the semiconductor wafer or from the back surface side. In the method of forming the modified region, when step 2 is performed after step 1 and laser irradiation is performed from the wafer surface, the semiconductor wafer is irradiated with laser light via the adhesive tape.
The semiconductor wafer to which the adhesive tape is attached and in which the grooves or the modified regions are formed is placed on a chuck table, and is held by being adsorbed on the chuck table. At this time, the surface side of the semiconductor wafer is placed on the mesa side and adsorbed.
(step 3)
After the steps 1 and 2, the back surface of the semiconductor wafer on the chuck table is ground, and the semiconductor wafer is singulated into a plurality of semiconductor chips.
Wherein, in the case of forming a groove on a semiconductor wafer, back grinding is performed to thin the semiconductor wafer until reaching at least the position of the bottom of the groove. By this back grinding, the grooves become through-wafer cuts, and the semiconductor wafer is divided by the cuts, whereby individual semiconductor chips are singulated.
On the other hand, in the case of forming the modified region, the ground surface (wafer back surface) may reach the modified region by grinding, but may not reach the modified region strictly. That is, the semiconductor wafer may be broken with the modified region as a starting point, and singulated into semiconductor chips. For example, the actual singulation of the semiconductor chips may be performed by stretching a pickup tape described later after the pickup tape is attached.
The singulated semiconductor chip may have a square shape or an elongated shape such as a rectangular shape. The thickness of the singulated semiconductor chip is not particularly limited, but is preferably about 5 to 100 μm, and more preferably 10 to 45 μm. The size of the singulated semiconductor chips is not particularly limited, and the chip size is preferably less than 50mm 2 More preferably less than 30mm 2 More preferably less than 10mm 2 。
When the adhesive tape of the present invention is used, even such a thin and/or small semiconductor chip can be prevented from being defective during back grinding (step 3) and peeling of the adhesive tape.
(Process 4)
Next, the adhesive tape for semiconductor processing is peeled from the singulated semiconductor wafer (i.e., the plurality of semiconductor chips). This step is performed, for example, in the following manner.
First, when the adhesive layer of the adhesive tape is formed of an energy ray curable adhesive, the adhesive layer is cured by irradiation of energy rays. Next, a pick-up tape is attached to the back surface side of the singulated semiconductor wafer, and alignment of the position and the direction is performed so that pick-up can be performed. At this time, the annular frame disposed on the outer peripheral side of the wafer is also bonded to the pickup tape, and the outer peripheral portion of the pickup tape is fixed to the annular frame. The wafer and the annular frame can be bonded on the pickup belt at the same time, or can be bonded at different times. Then, the adhesive tape is peeled from the plurality of semiconductor chips fixed to the pick-up tape.
Then, a plurality of semiconductor chips on the pickup tape are picked up and fixed on a substrate or the like, and a semiconductor device is manufactured.
The pickup tape is not particularly limited, and may be constituted by an adhesive sheet including a base material and an adhesive layer provided on one surface of the base material, for example.
Examples
Hereinafter, the present invention will be described in more detail based on examples, but the present invention is not limited to these examples.
The measurement method and the evaluation method in the present invention are as follows.
[ weight average molecular weight (Mw) ]
The measurement was performed under the following conditions using a gel permeation chromatography apparatus (product name "HLC-8020" manufactured by eastern co., ltd.) and using a value obtained by conversion into standard polystyrene.
(measurement conditions)
Column: "TSK guard column HXL-H", "TSK gel GMHXL (. Times.2)", "TSK gel G2000HXL" (manufactured by Tosoh Corp.)
Column temperature: 40 DEG C
Elution solvent: tetrahydrofuran (THF)
Flow rate: 1.0mL/min
[ Young's modulus of substrate ]
Young's modulus of the substrate was measured at a test speed of 200 mm/min based on JISK-7127 (1999) standard.
[ maximum value of elastic modulus and tan. Delta. Of buffer layer ]
A test buffer layer was produced in the same manner as the buffer layer of examples and comparative examples described later except that a release sheet (trade name "SP-PET381031", manufactured by Lindeke Co., ltd., thickness: 38 μm) was used instead of the base material and the thickness of the obtained buffer layer was 200. Mu.m. After the release sheet on the test buffer layer was removed, the loss modulus and storage modulus at a temperature in the range of-20 to 150℃were measured by a dynamic viscoelasticity device (trade name "Rheovitron DDV-II-EP1" manufactured by Orientec Co.) at a frequency of 11Hz using a test piece cut into a predetermined size.
The value of "loss modulus/storage modulus" at each temperature was calculated, and as the tan δ at that temperature, the maximum value of tan δ in the range of-5 to 120 ℃ was set as the "maximum value of tan δ of the buffer layer".
[ stress relaxation Rate of buffer layer ]
A test buffer layer was prepared on a release sheet in the same manner as described above, and the test buffer layer was cut into 15 mm. Times.140 mm pieces to form samples. A stress A (N/m 2) at 10% elongation and a stress B (N/m 2) after 1 minute from the stop of elongation of the tape were measured by grasping both ends of the specimen by a universal tensile tester (SHIMADZU corporation universal precision materials tester (autograph) AG-10 kNIS) and stretching at a speed of 200mm per minute. The stress relaxation rate was calculated from the above-mentioned value of stress A, B in accordance with (A-B)/A.times.100 (%).
[ elastic modulus of adhesive layer ]
The single-layer adhesive layers formed from the solutions of the adhesive compositions used in examples and comparative examples were laminated to obtain samples having a diameter of 8mm×a thickness of 3mm, and the storage modulus G' was measured by a torsional shear method using a viscoelasticity measuring apparatus (manufactured by Rheometrics corporation, apparatus name "DYNAMIC ANALYZER RDAII") under an environment of 1Hz and 23 ℃.
[ measurement of Peel force ]
The adhesive tapes with release sheets obtained in examples and comparative examples were cut into pieces 250mm long and 50mm wide, the release sheets were peeled off, and the adhesive tapes were stuck to 8-inch mirror-like silicon wafers using a 2kg rubber roll. After standing for 20 minutes, the mixture was irradiated with ultraviolet rays (trade name "RAD-2000", manufactured by Lindeke Co., ltd.)At an illuminance of 230mW/cm 2 Light quantity 380mJ/cm 2 Is irradiated with ultraviolet rays from the adhesive tape side. Using a universal tester (A)&The adhesive tape having the adhesive layer cured by ultraviolet irradiation was peeled off at a peeling speed of 4mm/sec and a peeling angle of 180 °, and the peeling force was measured. The test was performed at room temperature (23 ℃) and 50% RH.
[ measurement of thickness of adhesive tape ]
The total thickness of the adhesive tape, the thickness of the base material, the thickness of the adhesive layer, and the thickness of the buffer layer were measured using a constant pressure thickness measuring device (PG-02, manufactured by Teclock Co.). At this time, 10 arbitrary points were measured and the average value thereof was calculated.
In this example, the total thickness of the adhesive tape was measured as the thickness of the adhesive tape with the release sheet, and the thickness of the release sheet was subtracted from the measured thickness. The thickness of the buffer layer is a value obtained by subtracting the thickness of the substrate from the thickness of the substrate with the buffer layer. The thickness of the adhesive layer is obtained by subtracting the thicknesses of the buffer layer and the base material from the total thickness of the adhesive tape.
(evaluation of Performance)
[ crush test 1]
Grooves were formed from the wafer surface of a silicon wafer having a diameter of 12 inches (30.48 cm), and then an adhesive tape was attached to the wafer surface, and the wafer was singulated by a dicing-first method in which the wafer was singulated by back grinding, to thereby singulate chips having a thickness of 30 μm and a chip size of 1mm square. Then, the corner portions of the chips singulated from the wafer ground surface were observed with a digital microscope (VE-9800 manufactured by Keyence corporation) without peeling the adhesive tape, whether or not chipping was observed for each chip, and the chipping occurrence rate in 700 chips was measured and evaluated based on the following evaluation criteria.
A: less than 1.0%, B:1.0 to 2.0 percent, C: more than 2.0%
[ chip crack test 2]
First, an adhesive tape was attached to the surface of a silicon wafer having a diameter of 12 inches (30.48 cm). Next, a lattice-shaped modified region was formed on the silicon wafer from the surface opposite to the surface to which the adhesive tape was attached using a laser cutter. The lattice size was 1mm square. Then, the resultant was ground to a thickness of 30 μm using a back grinding device, and singulated into 1mm square chips. After the grinding step, a dicing tape (trade name "D-821HS" of lindaceae) was stuck to the surface of the adhesive tape opposite to the stuck surface, and the singulated chips were observed with a digital microscope through the dicing tape without peeling the adhesive tape, the presence or absence of chip cracks at each chip corner was observed, and the chip crack occurrence rate in 700 chips was measured and evaluated according to the following evaluation criteria.
A: less than 1.0%, B:1.0 to 2.0 percent, C: more than 2.0%
[ Peel evaluation 1]
The release sheet of the adhesive tape with release sheet obtained in examples and comparative examples was peeled off and mounted on a tape laminator (trade name "RAD-3510" manufactured by lindeke corporation) and attached to a 12-inch silicon wafer (thickness 760 μm) having grooves formed on the wafer surface by the dicing method under the following conditions.
Roller height: 0mm roller temperature: 23 ℃ (room temperature)
Stage temperature: 23 ℃ (room temperature)
The resulting silicon wafer with adhesive tape was singulated by back grinding (dicing-first method) into a square with a thickness of 30 μm and a chip size of 1 mm. The singulated adhesive tape with chips was subjected to ultraviolet irradiation (condition: 230 mW/cm) from the tape side using a dicing tape-attaching machine (trade name "RAD-2700" manufactured by Leideco Co., ltd.) 2 、380mJ/cm 2 ) The adhesive is cured. Then, a dicing tape (trade name "D-821HS", manufactured by Lindeke Co., ltd.) was stuck from the chip side in the same RAD-2700 apparatus. At this time, a jig called a ring frame used in the pickup process is also stuck together with the pickup tape. The cured tape was then peeled off in the RAD-2700 apparatus. The number of chips 700 after the adhesive tape was peeled off was observed with a digital microscope (trade name "VE-9800" manufactured by Keyence Co., ltd.) via a dicing tape, and chip defects were measured Is a frequency of occurrence of (1). The occurrence rate in the chipping test 1 was subtracted from the occurrence rate, and the obtained value was evaluated as the occurrence rate of the peeling evaluation 1 according to the following evaluation criteria.
OK: less than 1.0%, NG:1.0% or more
[ peeling evaluation 2]
The release sheets of the adhesive tapes with release sheets obtained in examples and comparative examples were peeled off and mounted on a tape laminator (trade name "RAD-3510" manufactured by lindeke corporation) and attached to a 12-inch (30.48 cm) silicon wafer (760 μm in thickness) under the following conditions.
Roller height: 0mm roller temperature: 23 ℃ (room temperature)
Stage temperature: 23 ℃ (room temperature)
Next, laser irradiation was performed from the surface opposite to the surface to which the tape was attached using a laser cutter, and a lattice-shaped modified region was formed on the wafer. The lattice size was 1mm square. The resulting silicon wafer with adhesive tape was singulated by back grinding into a thickness of 30 μm and a chip size of 1mm square. The singulated adhesive tape with chips was subjected to ultraviolet irradiation (condition: 230 mW/cm) from the tape side using a dicing tape-attaching machine (trade name "RAD-2510" manufactured by Leideco Co., ltd.) 2 、380mJ/cm 2 ) The adhesive is cured. Then, a pick-up tape (trade name "D-821HS", manufactured by Lindeke Co., ltd.) was attached to the chip side in the same RAD-2510 apparatus. At this time, the ring frame used in the pick-up process is also stuck together with the pick-up tape. The cured tape was then peeled off in the RAD-2510 apparatus. The number of chips 700 after the adhesive tape was peeled off was observed with a digital microscope (trade name "VE-9800" manufactured by Keyence Co., ltd.) via a dicing tape, and the occurrence of chip cracks was measured. The occurrence rate in the chip cracking test 1 was subtracted from the occurrence rate, and the obtained value was evaluated as the occurrence rate of the peeling evaluation 1 according to the following evaluation criteria.
OK: less than 1.0%, NG:1.0% or more
The mass parts in the following examples and comparative examples are solid component values.
Example 1
(1) Synthesis of urethane acrylate oligomer
The polyester diol was reacted with isophorone diisocyanate to obtain a terminal isocyanate urethane prepolymer, and 2-hydroxyethyl acrylate was reacted with the terminal isocyanate urethane prepolymer obtained as described above to obtain a bifunctional urethane acrylate oligomer (UA-1) having a weight average molecular weight (Mw) of 5000.
(2) Preparation of composition for Forming buffer layer
A buffer layer-forming composition was prepared by mixing 40 parts by mass of the above-synthesized urethane acrylate oligomer (UA-1), 40 parts by mass of isobornyl acrylate (IBXA), and 20 parts by mass of phenyl hydroxypropyl acrylate (phenyl hydroxypropyl acrylate) (HPPA), 2.0 parts by mass of 1-hydroxycyclohexyl phenyl ketone (manufactured by BASF corporation under the product name "Irgacure 184") as a photopolymerization initiator, and 0.2 parts by mass of a phthalocyanine pigment.
(3) Preparation of adhesive composition
An energy ray curable acrylic resin (Mw: 50 ten thousand) was obtained by copolymerizing 52 parts by mass of Butyl Acrylate (BA), 20 parts by mass of Methyl Methacrylate (MMA), and 28 parts by mass of 2-hydroxyethyl acrylate (HEA) to obtain an acrylic polymer (b), reacting 2-methacryloyloxyethyl isocyanate (MOI) with the acrylic polymer (b) obtained above, and adding 90 mol% of all hydroxyl groups of the acrylic polymer (b).
To 100 parts by mass of the energy ray curable acrylic resin, 6 parts by weight of a polyfunctional urethane acrylate (trade name: SHIKOH UT-4332, manufactured by Nippon chemical industry Co., ltd.) as an energy ray curable compound, 0.375 parts by mass of an isocyanate-based crosslinking agent (trade name: BHS-8515 manufactured by Toyo-chem Co., ltd.) on a solid content basis, and 1 part by weight of a photopolymerization initiator made of phenyl bis (2, 4, 6-trimethylbenzoyl) phosphine oxide were added, and the mixture was diluted with a solvent to prepare a coating liquid of the adhesive composition.
(4) Production of adhesive tape
The composition for forming a buffer layer obtained as described above was applied to one surface of a polyethylene terephthalate film (Young's modulus: 2500 MPa) having a thickness of 50 μm as a substrate, and the resultant film was irradiated with light at an illuminance of 160mW/cm 2 The irradiation amount was 500mJ/cm 2 The composition for forming a buffer layer was cured by ultraviolet irradiation under the conditions of (a) to obtain a buffer layer having a thickness of 13. Mu.m.
The pressure-sensitive adhesive composition obtained as described above was applied to a release treated surface of a release sheet (trade name: SP-PET381031, manufactured by Lindeke Co., ltd.) having a polyethylene terephthalate film as a release sheet base, and the pressure-sensitive adhesive composition was dried to a thickness of 20 μm, and then heated and dried to form a pressure-sensitive adhesive layer on the release sheet. The adhesive layer was adhered to the other surface of the substrate with the buffer layer, to obtain an adhesive tape with a release sheet.
The adhesive layer had an elastic modulus at 23℃of 0.15MPa. The storage modulus of the buffer layer was 250MPa, the stress relaxation rate was 90%, and the maximum value of tan. Delta. Was 1.24.
Examples 2 to 8 and comparative examples 1 to 15
The procedure of example 1 was repeated except that the thicknesses of the base material, the buffer layer, and the adhesive layer were changed as shown in table 1.
In each of examples and comparative examples, a polyethylene terephthalate film having the same young's modulus as in example 1 was used as a base material.
TABLE 1
The "-" in the table indicates that no implementation was performed.
As described above, in examples 1 to 8, the adhesive tape had a total thickness of 160 μm or less, a thickness ratio (D2/D1) of 0.7 or less, and a peeling force of 1000mN/25mm or less, and therefore, the chipping test and the peeling evaluation were good, and chip defects were not likely to occur at the time of back grinding of the semiconductor wafer and at the time of peeling of the adhesive tape in the dicing method.
In contrast, in comparative examples 1 to 10, since the thickness of the buffer layer was increased and the thickness ratio (D2/D1) was larger than 0.7, the occurrence rate of chipping was increased in the chipping test, and chipping of the semiconductor chip was likely to occur at the time of back grinding of the semiconductor wafer. In addition, when the thickness ratio (D2/D1) is increased, the peeling force tends to be increased, and as shown in comparative examples 3 and 4, the probability of occurrence of defects in the semiconductor chip at the time of peeling the adhesive tape is also increased.
In comparative examples 11 to 13, the total thickness of the tape of the adhesive tape was large, and the peeling force was increased, so that the semiconductor wafer was broken when the adhesive tape was peeled. In comparative example 14, the thickness ratio (D2/D1) and the total thickness of the adhesive tape were large, and therefore, defects and the like of the semiconductor wafer occurred both at the time of back grinding of the semiconductor wafer and at the time of peeling of the adhesive tape. In comparative example 15, since the total thickness of the adhesive tape was large, chip defects and the like were similarly generated.
Claims (13)
1. A semiconductor processing adhesive tape which is used by being stuck to the surface of a semiconductor wafer in the following steps: grinding the back surface of the semiconductor wafer having grooves formed on the surface of the semiconductor wafer or modified regions formed on the semiconductor wafer, and singulating the semiconductor wafer into semiconductor chips by the grinding,
the adhesive tape for semiconductor processing comprises: a base material, a buffer layer arranged on one surface of the base material, and an adhesive layer arranged on the other surface of the base material,
the adhesive tape for semiconductor processing has a total thickness of 160 [ mu ] m or less, a thickness (D2) of a buffer layer of 8 to 40 [ mu ] m, a ratio (D2/D1) of the thickness (D2) of the buffer layer to a thickness (D1) of a base material of 0.10 to 0.52, and a peeling force to a semiconductor wafer of 1000mN/50mm or less.
2. The adhesive tape for semiconductor processing according to claim 1, wherein the Young's modulus of the base material is 1000MPa or more.
3. The adhesive tape for semiconductor processing according to claim 1 or 2, wherein the thickness (D1) of the base material is 110 μm or less.
4. The adhesive tape for semiconductor processing according to claim 1 or 2, wherein the base material has at least a polyethylene terephthalate film.
5. The adhesive tape for semiconductor processing according to claim 1 or 2, wherein the adhesive layer is formed of an energy ray curable adhesive.
6. The adhesive tape for semiconductor processing according to claim 1 or 2, wherein the adhesive layer has an elastic modulus at 23 ℃ of 0.10 to 0.50MPa.
7. The adhesive tape for semiconductor processing according to claim 1 or 2, wherein the thickness (D3) of the adhesive layer is 70 μm or less.
8. The adhesive tape for semiconductor processing according to claim 1 or 2, wherein the adhesive layer is formed of an adhesive composition containing an acrylic resin having a structural unit derived from an alkyl (meth) acrylate having 4 or more carbon atoms in an alkyl group, a structural unit derived from an alkyl (meth) acrylate having 1 to 3 carbon atoms in an alkyl group, and a structural unit derived from a functional group-containing monomer.
9. The adhesive tape for semiconductor processing according to claim 1 or 2, wherein the buffer layer has a storage modulus at 23 ℃ of 100 to 1500MPa.
10. The adhesive tape for semiconductor processing according to claim 1 or 2, wherein the stress relaxation rate of the buffer layer is 70 to 100%.
11. The adhesive tape for semiconductor processing according to claim 1 or 2, wherein the buffer layer is formed of a buffer layer-forming composition comprising a urethane (meth) acrylate (a 1), a polymerizable compound (a 2) having an alicyclic group or a heterocyclic group having 6 to 20 ring-forming atoms, and a polymerizable compound (a 3) having a functional group.
12. The adhesive tape for semiconductor processing according to claim 11, wherein component (a 2) is a (meth) acrylate containing an alicyclic group, and component (a 3) is a (meth) acrylate containing a hydroxyl group.
13. A method for manufacturing a semiconductor device includes the steps of:
a step of adhering the adhesive tape for semiconductor processing according to any one of claims 1 to 12 to a surface of the semiconductor wafer;
forming a groove from the front surface side of the semiconductor wafer or forming a modified region from the front surface or the back surface of the semiconductor wafer into the semiconductor wafer;
A step of adhering the adhesive tape for semiconductor processing to a front surface, grinding the semiconductor wafer having the grooves or modified regions formed therein from a back surface side, and singulating the semiconductor wafer into a plurality of chips with the grooves or modified regions as a starting point; and
and peeling the adhesive tape for semiconductor processing from the plurality of chips.
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| Application Number | Priority Date | Filing Date | Title |
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| JP2016041261 | 2016-03-03 | ||
| JP2016-041261 | 2016-03-03 | ||
| PCT/JP2017/008314 WO2017150676A1 (en) | 2016-03-03 | 2017-03-02 | Adhesive tape for semiconductor processing and method for producing semiconductor device |
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| CN108701601A CN108701601A (en) | 2018-10-23 |
| CN108701601B true CN108701601B (en) | 2023-06-02 |
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| Country | Link |
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| JP (2) | JP7149487B2 (en) |
| KR (2) | KR102543780B1 (en) |
| CN (1) | CN108701601B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110240869B (en) * | 2018-03-09 | 2022-07-29 | 三菱化学株式会社 | Active energy ray-curable release adhesive composition and release adhesive sheet |
| JP2018115333A (en) * | 2018-03-20 | 2018-07-26 | リンテック株式会社 | Adhesive tape and method for producing semiconductor device |
| JP2018100423A (en) * | 2018-03-20 | 2018-06-28 | リンテック株式会社 | Adhesive tape and method of manufacturing semiconductor device |
| KR20200133209A (en) * | 2018-03-20 | 2020-11-26 | 린텍 가부시키가이샤 | Processed product manufacturing method and adhesive laminate |
| JP2018115332A (en) * | 2018-03-20 | 2018-07-26 | リンテック株式会社 | Pressure-sensitive adhesive tape and production method of semiconductor device |
| JP6616558B1 (en) * | 2018-06-26 | 2019-12-04 | リンテック株式会社 | Adhesive tape for semiconductor processing and method for manufacturing semiconductor device |
| US11842916B2 (en) | 2018-06-26 | 2023-12-12 | Lintec Corporation | Semiconductor processing adhesive tape and method of manufacturing semiconductor device |
| SG11202012963WA (en) | 2018-06-26 | 2021-01-28 | Lintec Corp | Adhesive tape for semiconductor processing and method for producing semiconductor device |
| TWI830764B (en) * | 2018-08-08 | 2024-02-01 | 日商琳得科股份有限公司 | Terminal protection tape and method for manufacturing semiconductor device with electromagnetic wave shielding film |
| JPWO2020189568A1 (en) * | 2019-03-15 | 2020-09-24 | ||
| JPWO2020196755A1 (en) * | 2019-03-28 | 2020-10-01 | ||
| CN113613896A (en) * | 2019-03-29 | 2021-11-05 | 琳得科株式会社 | Protective sheet for semiconductor processing and method for manufacturing semiconductor device |
| JPWO2020203437A1 (en) * | 2019-03-29 | 2020-10-08 | ||
| JPWO2022097420A1 (en) * | 2020-11-06 | 2022-05-12 | ||
| KR102292205B1 (en) * | 2020-11-11 | 2021-08-23 | (주)이녹스첨단소재 | Adhesive film for wafer processing |
| CN112967928B (en) * | 2020-12-16 | 2022-07-29 | 重庆康佳光电技术研究院有限公司 | Chip cutting method and chip transferring method |
| KR102660802B1 (en) * | 2021-08-11 | 2024-04-26 | (주)이녹스첨단소재 | Adhesive film for wafer processing |
| KR20230024542A (en) * | 2021-08-12 | 2023-02-21 | (주)이녹스첨단소재 | Adhesive film for wafer back grinding |
| WO2023188272A1 (en) * | 2022-03-31 | 2023-10-05 | リンテック株式会社 | Adhesive tape for semiconductor processing |
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| Publication number | Publication date |
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| JP2022009012A (en) | 2022-01-14 |
| KR20180122610A (en) | 2018-11-13 |
| WO2017150676A1 (en) | 2017-09-08 |
| TWI721120B (en) | 2021-03-11 |
| KR102543780B1 (en) | 2023-06-14 |
| JP7149487B2 (en) | 2022-10-07 |
| KR20220025261A (en) | 2022-03-03 |
| JP7207778B2 (en) | 2023-01-18 |
| TW201741419A (en) | 2017-12-01 |
| KR102365799B1 (en) | 2022-02-21 |
| CN108701601A (en) | 2018-10-23 |
| JPWO2017150676A1 (en) | 2018-12-27 |
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