CN108682640A - 一种硅晶圆刻蚀装置 - Google Patents
一种硅晶圆刻蚀装置 Download PDFInfo
- Publication number
- CN108682640A CN108682640A CN201810493977.XA CN201810493977A CN108682640A CN 108682640 A CN108682640 A CN 108682640A CN 201810493977 A CN201810493977 A CN 201810493977A CN 108682640 A CN108682640 A CN 108682640A
- Authority
- CN
- China
- Prior art keywords
- turntable
- wafer
- sector gear
- shell
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005530 etching Methods 0.000 title claims abstract description 75
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 16
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 16
- 239000010703 silicon Substances 0.000 title claims abstract description 16
- 238000002347 injection Methods 0.000 claims abstract description 30
- 239000007924 injection Substances 0.000 claims abstract description 30
- 230000005284 excitation Effects 0.000 claims abstract description 11
- 210000004907 gland Anatomy 0.000 claims description 35
- 241000883990 Flabellum Species 0.000 claims description 28
- 238000001035 drying Methods 0.000 claims description 2
- 238000009434 installation Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 67
- 239000007789 gas Substances 0.000 description 53
- 238000006243 chemical reaction Methods 0.000 description 11
- 230000000694 effects Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000010849 ion bombardment Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810493977.XA CN108682640B (zh) | 2018-05-22 | 2018-05-22 | 一种硅晶圆刻蚀装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810493977.XA CN108682640B (zh) | 2018-05-22 | 2018-05-22 | 一种硅晶圆刻蚀装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108682640A true CN108682640A (zh) | 2018-10-19 |
CN108682640B CN108682640B (zh) | 2020-10-30 |
Family
ID=63807349
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810493977.XA Active CN108682640B (zh) | 2018-05-22 | 2018-05-22 | 一种硅晶圆刻蚀装置 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN108682640B (zh) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1848385A (zh) * | 2005-04-15 | 2006-10-18 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种电感耦合等离子体装置 |
CN1953636A (zh) * | 2005-09-27 | 2007-04-25 | 三星电子株式会社 | 等离子体加速器 |
US7638003B2 (en) * | 2006-01-12 | 2009-12-29 | Asm Japan K.K. | Semiconductor processing apparatus with lift pin structure |
CN104637769A (zh) * | 2013-11-06 | 2015-05-20 | 东京毅力科创株式会社 | 基板处理装置和基板处理方法 |
CN105336563A (zh) * | 2014-07-24 | 2016-02-17 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 刻蚀装置及刻蚀方法 |
-
2018
- 2018-05-22 CN CN201810493977.XA patent/CN108682640B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1848385A (zh) * | 2005-04-15 | 2006-10-18 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种电感耦合等离子体装置 |
CN1953636A (zh) * | 2005-09-27 | 2007-04-25 | 三星电子株式会社 | 等离子体加速器 |
US7638003B2 (en) * | 2006-01-12 | 2009-12-29 | Asm Japan K.K. | Semiconductor processing apparatus with lift pin structure |
CN104637769A (zh) * | 2013-11-06 | 2015-05-20 | 东京毅力科创株式会社 | 基板处理装置和基板处理方法 |
CN105336563A (zh) * | 2014-07-24 | 2016-02-17 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 刻蚀装置及刻蚀方法 |
Also Published As
Publication number | Publication date |
---|---|
CN108682640B (zh) | 2020-10-30 |
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Legal Events
Date | Code | Title | Description |
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PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20200929 Address after: Building 39, Weile neighborhood life square, Luzhi Town, Wuzhong District, Suzhou City, Jiangsu Province Applicant after: Suzhou yinzhicheng new energy Co.,Ltd. Address before: 100176 Beijing Daxing Economic and Technological Development Zone Liangshuihe Second Street No. 8 Hospital No. 17 Beijing Dazu Tiancheng Semiconductor Technology Co., Ltd. Applicant before: Xu Yaqin |
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TA01 | Transfer of patent application right | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20240113 Address after: 200137, Room 2008, Building 4, No. 1628 Lizheng Road, Lingang New Area, China (Shanghai) Pilot Free Trade Zone, Pudong New Area, Shanghai Patentee after: Shanghai genjin precision Electromechanical Technology Co.,Ltd. Address before: Building 39, Weile Neighborhood Life Plaza, Luzhi Town, Wuzhong District, Suzhou City, Jiangsu Province, 215125 Patentee before: Suzhou yinzhicheng new energy Co.,Ltd. |
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TR01 | Transfer of patent right |