CN108667437A - A kind of thin film bulk acoustic wave resonator and its manufacturing method and electronic device - Google Patents
A kind of thin film bulk acoustic wave resonator and its manufacturing method and electronic device Download PDFInfo
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02047—Treatment of substrates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
Abstract
A kind of thin film bulk acoustic wave resonator of present invention offer and its manufacturing method and electronic device, the method includes：Substrate is provided, bottom cavity is formed in the substrate, sacrificial material layer is filled in the bottom cavity；Lower electrode, piezoelectric layer and top electrode are sequentially formed on the part surface of the sacrificial material layer and the part surface of substrate, and exposes the part surface of sacrificial material layer, top electrode and the overlapping of lower electrode top and the bottom；Dielectric layer is formed, to cover the front of substrate, and the top surface of dielectric layer is higher than the top surface of top electrode；The apex cavity through dielectric layer is formed, the part surface of top electrode and the sacrificial material layer described in apex cavity exposed portion；Block substrate is provided, the side that block substrate is formed with to the dielectric layer with substrate engages；At least one release aperture is formed, release aperture runs through substrate exposed portion sacrificial material layer, alternatively, release aperture runs through block substrate exposed portion apex cavity；Remove sacrificial material layer.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of thin film bulk acoustic wave resonator and its manufacturing method
And electronic device.
Background technology
Thin film bulk acoustic wave resonator (Film Bulk Acoustic Resonator, abbreviation FBAR) is due to high Q
Value, size be small, is worldwide used widely with the advantages that silicon chip processing compatibility is good and good reliability, especially
It is to be used widely in wireless communication field.
All all and are wirelessly associated in following world, and the global consumer of radio-frequency apparatus in 2015 probably has about according to statistics
36000000, and 250,000,000 can be reached by expecting the year two thousand twenty.The demand of radio-frequency apparatus will increase several times, and the whole world is everyone 3 average
Equipment.Smart mobile phone generally includes 8 or 9 radio-frequency filters (RF filter) and 8 duplexers (duplexer).If made
It, then also can be more and more for the demand of radio-frequency apparatus with 5G technologies.It expects 2020, the demand of radio-frequency filter will be from
50000000 increase to 130,000,000,000.Therefore, for the film bulk acoustic of one of main element as radio-frequency filter and duplexer
Needing for resonator also can be increasing.
However, the preparation process of conventional thin film bulk acoustic wave resonator typically forms bottom cavity in the substrate at present,
Sacrificial material layer is formed in bottom cavity, and lower electrode, piezoelectric layer and top electrode are then sequentially formed in sacrificial material layer, and
In order to discharge the sacrificial material layer in bottom cavity, it usually needs formation sequentially pass through the top electrode, piezoelectric layer and it is described under
The release aperture of electrode is removed the sacrificial material layer in bottom cavity by wet-etching technology, using the release aperture with final
Discharge structure.However due to the presence of release aperture so that top electrode, piezoelectric layer and lower electrode are discontinuous, to film bulk acoustic
The overall resonance performance of resonator adversely affects, and needs to open release aperture by new mask, makes technique mistake
In complexity, process costs increase.
In view of the presence of above-mentioned technical problem, the present invention provides a kind of new thin film bulk acoustic wave resonator and its manufacturer
Method.
Invention content
A series of concept of reduced forms is introduced in Summary, this will in the detailed description section into
One step is described in detail.The Summary of the present invention is not meant to attempt to limit technical solution claimed
Key feature and essential features do not mean that the protection domain for attempting to determine technical solution claimed more.
For presently, there are the problem of, one aspect of the present invention provides a kind of manufacturing method of thin film bulk acoustic wave resonator, packet
It includes：
Substrate is provided, bottom cavity is formed in the substrate, sacrificial material layer is filled in the bottom cavity；
Lower electrode, piezoelectricity are sequentially formed on the part surface of the sacrificial material layer and the part surface of the substrate
Layer and top electrode, and expose the part surface of the sacrificial material layer, wherein the top electrode and the lower electrode top and the bottom
Overlapping；
Dielectric layer is formed, to cover the front of the substrate, and the top surface of the dielectric layer is higher than the top electrode
Top surface；
The apex cavity through the dielectric layer is formed, top electrode described in the apex cavity exposed portion and described sacrificial
The part surface of domestic animal material layer；
Block substrate is provided, the side that the block substrate is formed with to the dielectric layer with the substrate engages；
Forming at least one release aperture, wherein the release aperture runs through sacrificial material layer described in the substrate exposed portion,
Alternatively, the release aperture is through apex cavity described in block substrate exposed portion；
Remove the sacrificial material layer.
Illustratively, the cross-sectional shape of the bottom cavity is the parallel polygon in arbitrary both sides；
The plan view shape of the lower electrode is the parallel polygon in arbitrary both sides；
The plan view shape of the piezoelectric layer is the parallel polygon in arbitrary both sides；
The plan view shape of the top electrode is the parallel polygon in arbitrary both sides；
The cross-sectional shape of the apex cavity is the parallel polygon in arbitrary both sides.
Illustratively, lap forms a common inner circumferential up and down for the apex cavity and the bottom cavity, described
Common inner circumferential the piezoelectric layer in the plane be projected as irregular polygon, the irregular polygon does not include
Any pair opposite and parallel straightway.
Illustratively, the sacrificial material layer is removed by the method for wet etching or dry etching.
Illustratively, the block substrate is formed with to the method packet that the side of the dielectric layer engages with the substrate
It includes：
Before forming the bottom cavity, alternatively, after forming the sacrificial material layer, formed the lower electrode it
Before, bonding welding pad is formed in the front of the substrate, the plan view shape of the bonding welding pad is in a ring and empty around the bottom
Chamber；
Block substrate, the bonding ring that groove is formed on the block substrate and is protruded around the groove are provided；
The opening for exposing the bonding welding pad is formed in the dielectric layer, the opening matches with the ring that is bonded；
Bonding technology is carried out, the bonding ring is mutually bonded with the bonding welding pad, top described in the groove sealing cover
Cavity, to realize that the block substrate and the substrate engage.
Illustratively, further include：Before forming the lower electrode, the first pad of formation and the second pad, described first
Pad and second pad are located at the both sides of the bottom cavity, and the lower electrode is electrically connected first pad, it is described on
Electrode is electrically connected second pad.
Illustratively, the top of the bonding ring includes bonding material layer.
Illustratively, after engaging the block substrate and the substrate, before removing the sacrificial material layer
Or later, further include：
Interconnection structure is formed at the back side of the substrate, to be electrically connected the lower electrode and the top electrode.
Illustratively, it is being formed before the release aperture of sacrificial material layer described in the substrate exposed portion, also
Including：The back side of the substrate is thinned.
Illustratively, the block substrate is formed with to the method packet that the side of the dielectric layer engages with the substrate
It includes：
Block substrate is provided, by the block substrate and the dielectric layer Direct Bonding.
Illustratively, after removing the sacrificial layer, further include：
It forms sealing material and fills the release aperture.
Further aspect of the present invention provides a kind of thin film bulk acoustic wave resonator, including：
Substrate；
Bottom cavity is formed in the substrate；
Lower electrode is formed in the front of substrate and covers at least partly described bottom cavity；
Piezoelectric layer is arranged on the lower electrode；
Top electrode is arranged on the piezoelectric layer；
Dielectric layer covers the front of the substrate, and the top surface of the dielectric layer is higher than the top surface of the top electrode；
Apex cavity through the dielectric layer and exposes at least partly described top electrode；
Block substrate, on the substrate, and the side for being provided with the substrate dielectric layer engages for setting；
Release aperture, the release aperture is opposite with the bottom cavity and runs through the substrate, alternatively, the release aperture runs through
The block substrate is opposite with the apex cavity.
Illustratively, the cross-sectional shape of the bottom cavity is the parallel polygon in arbitrary both sides；
The plan view shape of the lower electrode is the parallel polygon in arbitrary both sides；
The plan view shape of the piezoelectric layer is the parallel polygon in arbitrary both sides；
The plan view shape of the top electrode is the parallel polygon in arbitrary both sides；
The cross-sectional shape of the apex cavity is the parallel polygon in arbitrary both sides.
Illustratively, lap forms a common inner circumferential up and down for the apex cavity and the bottom cavity, described
Common inner circumferential the piezoelectric layer in the plane be projected as irregular polygon, the irregular polygon does not include
Any pair opposite and parallel straightway.
Illustratively, further include：
It is bonded ring, the setting of protrusion is on the block substrate；
Bonding welding pad is formed in the front of the substrate, wherein the plan view shape of the bonding welding pad in a ring, and ring
Around the bottom cavity, the bonding ring is bonded ring and is mutually bonded through the dielectric layer with described.
Illustratively, further include：First pad and the second pad, first pad and second pad are located at described
On the substrate surface of bottom cavity both sides, and positioned at the lower section of the lower electrode, the lower electrode is electrically connected first pad,
The top electrode is electrically connected second pad.
Illustratively, the top of the bonding ring includes bonding material layer.
Illustratively, it is formed with interconnection structure at the back side of the substrate, to be electrically connected the lower electrode and described
Top electrode.
Illustratively, further include sealing material, the sealing material fills the release aperture.
Further aspect of the present invention also provides a kind of electronic device, and the electronic device includes film bulk acoustic resonator above-mentioned
Device.
The manufacturing method of the thin film bulk acoustic wave resonator of the present invention, by formation through sacrificial described in the substrate exposed portion
The release aperture of domestic animal material layer, alternatively, the release aperture through apex cavity described in block substrate exposed portion is formed, the release
Hole discharges structure, is sacrificed without re-forming to be used to remove in lower electrode, piezoelectric layer and top electrode for removing sacrificial material layer
The release aperture of material layer, thus it is guaranteed that the continuity of lower electrode, piezoelectric layer and top electrode, improves film bulk acoustic resonator
The resonance performance of device, and the new mask of release aperture is not necessarily formed, technique is simpler, has saved process costs.
Description of the drawings
The following drawings of the present invention is used to understand the present invention in this as the part of the present invention.Shown in the drawings of this hair
Bright embodiment and its description, principle used to explain the present invention.
In attached drawing：
Figure 1A to Figure 1B shows the diagrammatic cross-section of conventional films bulk acoustic wave resonator；
Fig. 2A to Fig. 2 N show the manufacturing method of the thin film bulk acoustic wave resonator of a specific implementation mode of the invention according to
The secondary diagrammatic cross-section for implementing obtained structure；
Fig. 3 shows the partial top view of the thin film bulk acoustic wave resonator of a specific implementation mode of the invention；
Fig. 4 A to Fig. 4 E show the manufacturing method of the thin film bulk acoustic wave resonator of another embodiment of the present invention
Implement the diagrammatic cross-section of obtained structure successively；
Fig. 5 shows the flow chart of the manufacturing method of the thin film bulk acoustic wave resonator of a specific implementation mode of the invention；
Fig. 6 shows the schematic diagram of the electronic device of a specific implementation mode of the invention.
Specific implementation mode
In the following description, a large amount of concrete details are given in order to provide more thorough understanding of the invention.So
And it is obvious to the skilled person that the present invention may not need one or more of these details and be able to
Implement.In other examples, in order to avoid with the present invention obscure, for some technical characteristics well known in the art not into
Row description.
It should be understood that the present invention can be implemented in different forms, and should not be construed as being limited to propose here
Embodiment.Disclosure will be made thoroughly and complete on the contrary, providing these embodiments, and will fully convey the scope of the invention to
Those skilled in the art.In the accompanying drawings, for clarity, the size and relative size in the areas Ceng He may be exaggerated.From beginning to end
Same reference numerals indicate identical element.
It should be understood that when element or layer be referred to as " ... on ", " with ... it is adjacent ", " being connected to " or " being coupled to " it is other
When element or layer, can directly on other elements or layer, it is adjacent thereto, be connected or coupled to other elements or layer, or
There may be elements or layer between two parties by person.On the contrary, when element is referred to as " on directly existing ... ", " with ... direct neighbor ", " directly
It is connected to " or " being directly coupled to " other elements or when layer, then element or layer between two parties is not present.It should be understood that although can make
Various component, assembly units, area, floor and/or part are described with term first, second, third, etc., these component, assembly units, area, floor and/
Or part should not be limited by these terms.These terms be used merely to distinguish a component, assembly unit, area, floor or part with it is another
One component, assembly unit, area, floor or part.Therefore, do not depart from present invention teach that under, first element discussed below, portion
Part, area, floor or part are represented by second element, component, area, floor or part.
Spatial relationship term for example " ... under ", " ... below ", " below ", " ... under ", " ... it
On ", " above " etc., herein can for convenience description and being used describe an elements or features shown in figure with
The relationship of other elements or features.It should be understood that other than orientation shown in figure, spatial relationship term intention further includes making
With the different orientation with the device in operation.For example, if the device in attached drawing is overturn, then, it is described as " under other elements
Face " or " under it " or " under it " elements or features will be oriented in other elements or features "upper".Therefore, exemplary art
Language " ... below " and " ... under " it may include upper and lower two orientations.Device can additionally be orientated (be rotated by 90 ° or its
It is orientated) and spatial description language as used herein correspondingly explained.
The purpose of term as used herein is only that description specific embodiment and not as the limitation of the present invention.Make herein
Used time, " one " of singulative, "one" and " described/should " be also intended to include plural form, unless context is expressly noted that separately
Outer mode.It is also to be understood that term " composition " and/or " comprising ", when being used in this specification, determines the feature, whole
The presence of number, step, operations, elements, and/or components, but be not excluded for one or more other features, integer, step, operation,
The presence or addition of component, assembly unit and/or group.Herein in use, term "and/or" includes any of related Listed Items and institute
There is combination.
In order to thoroughly understand the present invention, detailed step and structure will be proposed in following description, to illustrate the present invention
The technical solution of proposition.Presently preferred embodiments of the present invention is described in detail as follows, however other than these detailed descriptions, the present invention is also
There can be other embodiment.
As shown in FIG. 1A and 1B, however, the preparation process of conventional thin film bulk acoustic wave resonator is typically in base at present
Bottom cavity is formed in bottom, is formed sacrificial material layer 101 in bottom cavity, is then sequentially formed in sacrificial material layer 101
Lower electrode 102, piezoelectric layer 103 and top electrode 104, and in order to remove the sacrificial material layer 101 in bottom cavity, it usually needs
Formation sequentially passes through the top electrode 104, the release aperture 105 of piezoelectric layer 103 and the lower electrode 102, using the release aperture, leads to
It crosses wet-etching technology to remove the sacrificial material layer 101 in bottom cavity, finally to discharge structure.However due to release aperture
In the presence of so that top electrode, piezoelectric layer and lower electrode are discontinuous, cause to bear to the overall resonance performance of thin film bulk acoustic wave resonator
Face is rung, and needs to open release aperture by new mask, keeps technique excessively complicated, process costs increase.
In view of the presence of above-mentioned technical problem, the present invention provides a kind of manufacturing method of thin film bulk acoustic wave resonator, such as Fig. 5
It is shown, including：
Step S1, provides substrate, and bottom cavity is formed in the substrate, filled with sacrifice in the bottom cavity
Material layer,
Step S2 sequentially forms lower electricity on the part surface of the sacrificial material layer and the part surface of the substrate
Pole, piezoelectric layer and top electrode, and expose the part surface of the sacrificial material layer, wherein the top electrode and the lower electrode
Top and the bottom are overlapped；
Step S3 forms dielectric layer, and to cover the front of the substrate, and the top surface of the dielectric layer is higher than on described
The top surface of electrode；
Step S4 forms the apex cavity through the dielectric layer, top electrode described in the apex cavity exposed portion with
And the part surface of the sacrificial material layer；
Step S5 provides block substrate, and the block substrate is formed with to the side phase of the dielectric layer with the substrate
Engagement；
Step S6 forms at least one release aperture, wherein the release aperture runs through sacrifices described in the substrate exposed portion
Material layer, alternatively, the release aperture is through apex cavity described in block substrate exposed portion；
Step S7 removes the sacrificial material layer.
The manufacturing method of the thin film bulk acoustic wave resonator of the present invention, by formation through sacrificial described in the substrate exposed portion
The release aperture of domestic animal material layer, alternatively, the release aperture through apex cavity described in block substrate exposed portion is formed, the release
Hole discharges structure, is sacrificed without re-forming to be used to remove in lower electrode, piezoelectric layer and top electrode for removing sacrificial material layer
The release aperture of material layer, thus it is guaranteed that the continuity of lower electrode, piezoelectric layer and top electrode, improves film bulk acoustic resonator
The resonance performance of device, and the new mask of release aperture is not necessarily formed, technique is simpler, has saved process costs.
Embodiment one
The manufacturing method of the thin film bulk acoustic wave resonator of the present invention is done in detail below with reference to Fig. 2A to Fig. 2 N, Fig. 3 and Fig. 5
Thin explanation and illustration.
First, it executes step 1 and provides substrate 201 as shown in Figure 2 C, bonding is formed in the front of the substrate 201
Pad 2043 and bottom cavity are filled with sacrificial material layer 2061, wherein the bonding welding pad 2043 in the bottom cavity
Plan view shape in a ring and around the bottom cavity.
The substrate 201 can be any appropriate semiconductor substrate, such as body silicon substrate, can also be following and carried
At least one of material arrived：Si, Ge, SiGe, SiC, SiGeC, InAs, GaAs, InP or other III/V compounds half
Conductor further includes the multilayered structure etc. that these semiconductors are constituted, or for silicon is laminated on silicon-on-insulator (SOI), insulator
(SSOI), SiGe (S-SiGeOI), germanium on insulator SiClx (SiGeOI) and germanium on insulator are laminated on insulator
(GeOI), or can also be twin polishing silicon chip (Double Side Polished Wafers, DSP), or oxidation
Ceramic bases, quartz or substrate of glass of aluminium etc. etc..
In one example, as shown in Figure 2 A, before forming the bonding welding pad, further include：Separation layer 202 is formed,
To cover the front of the substrate 201.
The material of the separation layer 202 can be any suitable dielectric material, including but not limited to silica, nitridation
At least one of materials such as silicon, silicon oxynitride, the separation layer 202 are used to increase the stability of device architecture, increase device
Being isolated between substrate 201 can reduce the resistivity requirement to substrate 201, prevent having electric leakage between the electrode of device
Occur, and the separation layer can be used as transition zone of the device (such as lower electrode) between substrate 201, improve device architecture growth
Consistency and substrate and device film layer between adhesiveness, to improve device performance and reliability.
It can be by any suitable deposition method such as chemical vapor deposition, physical vapour deposition (PVD) or atomic layer deposition
Method layer deposited isolating 202 is in substrate 201.
Further, the thickness of separation layer 202 can need to carry out reasonable set according to practical devices technique, not do herein
It is specific to limit.
In one example, the first pad 2041 and the second pad are formed while forming bonding welding pad 2043
2042, first pad 2041 and second pad 2042 be located at the bonding welding pad 2043 and the bottom cavity it
Between, wherein first pad is used to be electrically connected the lower electrode being subsequently formed, lower electrode is drawn, and second pad is used
In the top electrode that electrical connection is subsequently formed, top electrode is drawn.
In one example, as shown in Figure 2 A and 2 B, the bonding welding pad 2043,2041 and of the first pad are formed
The method of second pad 2042 includes：
First, as shown in Figure 2 A, patterned first mask layer (not shown) is formed in the front of the substrate 201, it is fixed
Justice has the pattern of first pad, second pad and the bonding welding pad.Optionally, patterned first mask
The material of layer includes Other substrate materials, is patterned using the first mask layer of photoetching process pair, to form patterned first
Mask layer, which, which exposes, makes a reservation for be formed first pad, second pad and bonding weldering
The region of disk.
Then, continue as shown in Figure 2 A, using patterned first mask layer as substrate described in mask etching part, with
Form the first groove 2031, the second groove 2032 and third groove 2033, when being formed with separation layer 202, first groove
2031, the second groove 2032 and third groove 2033 are in the separation layer 202 to substrate 201.
The etching technics can be wet etching or dry etch process, wherein preferably with dry etch process,
Dry etching includes but not limited to：Reactive ion etching (RIE), ion beam etching, plasma etching or laser cutting, with
Afterwards, the first mask layer that will be patterned into removes, such as the first mask layer of photoresist mask material is removed using the method for ashing.
Then, as shown in Figure 2 B, respectively in first groove 2031, the second groove 2032 and third groove 2033
First pad 2041, the second pad 2042 and the bonding welding pad 2043 are formed on bottom.
The material of first pad 2041, the second pad 2042 and the bonding welding pad 2043 may include any suitable gold
Belong to material, including but not limited at least one of Ag, Au, Cu, Pd, Cr, Mo, Ti, Ta, Sn, W and Al metal, preferably, the
The material of one pad 2041, the second pad 2042 and the bonding welding pad 2043 includes Al.
First pad 2041, the second pad 2042 and bonding weldering can be formed using any suitable method
Disk 2043, for example, can be by including but not limited to physical gas-phase deposite method, chemical vapor deposition method or magnetron sputtering
Deposition method forms bonding pad material layer in first groove 2031, the second groove 2032 and third groove 2033, wherein position
Bonding pad material layer in first groove 2031 is as the first pad 2041, the pad being located in second groove 2032
Material layer is located at the bonding pad material layer in the third groove as the bonding welding pad 2043 as the second pad 2042.
It is noted that first pad 2041, the second pad can also be formed by other suitable techniques
2042 and bonding welding pad 2043, for example, bonding pad material layer can be initially formed to cover the front of the substrate 201, recycle
Photoetching process and etching technics pattern the bonding pad material layer, to form first pad, the second pad and bonding welding pad.
In one example, as shown in Figure 2 B, first pad 2041, the second pad 2042 and bonding welding pad are being formed
Further include forming passivation layer 205 after 2043, to cover the first pad 2041, the second pad 2042 and bonding welding pad 2043.
The material of the passivation layer 205 can be all using any suitable insulating materials, such as the use of the passivation layer 205
Such as the inorganic insulation layer of silicon oxide layer, silicon nitride layer or silicon oxynitride layer, chemical vapor deposition, physical vapour deposition (PVD) can be passed through
Or the depositions such as atomic layer deposition form the passivation layer 205；It can also use such as comprising polyvinyl phenol, polyamides
The insulating layer etc. of the layer of imines or siloxanes etc..Polyvinyl phenol, polyimides or siloxanes can be arranged effectively by droplet
Method, the art of printing or spin-coating method is put to be formed.Siloxanes can be classified into silica glass according to its structure, alkylsiloxane polymerize
Object, alkyl silsesquioxane (alkylsilsesquioxane) polymer, silsesquioxane hydride (silsesquioxane
Hydride) polymer, alkyl silsesquioxane hydride (alkylsilsesquioxane hydride) polymer etc..This
Outside, it includes that there is the material of the polymer (polysilazane) of Si-N keys to be formed that insulating materials is available.In addition, can be laminated these films with
Form passivation layer.
The thickness of the passivation layer can be any suitable thickness, be not specifically limited herein.
Optionally, after forming the passivation layer, which can also be planarized, such as chemical machinery is ground
Mill, stops at the surface of separation layer 202, the surface on the surface and the separation layer 202 that make passivation layer 205 flushes.
In one example, the opening for exposing first pad can also be formed in the passivation layer, in order to follow-up shape
At lower electrode be in direct contact to be formed with the first pad and be electrically connected.
In one example, it is forming the bonding welding pad 2043 and then is forming the bottom cavity, such as Fig. 2 C institutes
Show, the method for forming the bottom cavity includes：The method for forming the bottom cavity includes：First, in the substrate 201
Front forms patterned second mask layer (not shown), and definition has the pattern of the bottom cavity；With described patterned
Second mask layer is mask, the separation layer 202 and the part substrate 201 is sequentially etched, to form the bottom cavity, institute
Bottom cavity is stated in the separation layer 202 to the substrate 201；Remove patterned second mask layer.
Illustratively, the cross-sectional shape of the bottom cavity is the parallel polygon in arbitrary both sides.The cross section refers to
The section that section bottom cavity is obtained is gone to the face parallel with the surface of substrate.
Optionally, as shown in Figure 2 C, the bonding welding pad 2043 is around the bottom cavity, 2041 He of the first pad
Second pad 2042 is separately positioned on the both sides of the bottom cavity, and is arranged in the bonding welding pad 2043 and the bottom
Between portion's cavity, alternatively, can also be that first pad and second pad are arranged at the same of the bottom cavity
Side, and the first pad for being electrically connected with the lower electrode is arranged between second pad and the bottom cavity.
Further, after forming the bottom cavity, further include：Deposition forms sacrificial material layer 2061, and filling is full
The bottom cavity, for example, the full bottom cavity of the first filling of sacrificial material layer 2061 and the substrate can be covered,
The flatening process for executing such as chemical mechanical grinding again stops at 202 surface of the separation layer, it is more will to be located at substrate surface
Remaining sacrificial material layer removal.
The material of the sacrificial material layer 2061 can be any suitable material, for example, silica, germanium, polysilicon, light
Either amorphous carbon etc. can use the formation of the methods of chemical vapor deposition, physical vapour deposition (PVD) or atomic layer deposition sacrificial to photoresist
Domestic animal material layer 2061.
It is noted that in other examples, bottom cavity and filling can also be formed before forming bonding welding pad
The sacrificial material layer 2061 of the bottom cavity.
Then, step 2 is executed, as shown in Figure 2 D, in the part of the sacrificial material layer 2061 and the substrate 201
Lower electrode 2071 and piezoelectric layer 2072 are sequentially formed on surface, and expose the part surface of the sacrificial material layer 2061.
Further, as shown in figure 3, it is the part-structure schematic plan of FBAR, in the plane by the vertical view
Divide into orthogonal X-axis and Y-axis, the plan view shape of the lower electrode 2071 and the piezoelectric layer 2072 is arbitrary two
The parallel polygon in side, for example, quadrangle, pentagon or hexagon etc., wherein the shape of the piezoelectric layer 2072 is especially
Can be parallelogram, sacrificial material layer described in 2071 covering part of lower electrode, for example, the lower electrode is along Y-direction
The whole sacrificial material layers of covering, and then expose the sacrificial material layer positioned at both ends in the X direction, the expendable material which exposes
Layer, the release channel subsequently as sacrificial material layer, and with electrode at present and the overlapping of 2072 top and the bottom of piezoelectric layer, piezoelectric layer
2072 can the lateral extension of downward electrode in the Y direction divide length.
Further, the bonding welding pad 2043 is around the lower electrode 2071 and the piezoelectric layer 2072.
Wherein, lower electrode 2071 can use conductive material or semi-conducting material, wherein conductive material can be with leading
The metal material of electrical property, for example, aluminium (Al), copper (Cu), platinum (Pt), golden (Au), iridium (Ir), osmium (Os), rhenium (Re), palladium
(Pd), one or more of rhodium (Rh) and ruthenium (Ru) or the metallic films such as molybdenum (Mo) or tungsten (W).Lower electrode 2071
Any suitable semi-conducting material, such as Si, Ge, SiGe, SiC, SiGeC etc. can be used.
It for the thickness of lower electrode 2071, can be set according to target resonance frequency, for example, it can be set to for wavelength
1/10 or so.
In one example, the method for forming the lower electrode 2071 includes：First, lower electrode material layer is formed, to cover
Cover the surface that the substrate is formed with sacrificial material layer, for example, covering first pad, the substrate, the passivation layer with
And the surface of the part sacrificial material layer.The method that can be suitble to according to the material selection of the lower electrode of predetermined formation forms institute
Lower electrode material layer is stated, such as the lower electrode material layer can be formed by the methods of magnetron sputtering, physical vapour deposition (PVD).So
Afterwards, the lower electrode material layer is patterned, to form the lower electrode 2071, for example, can be first with photoetching process in lower electricity
Pole material layer, which forms definition, the photoresist layer of lower electrode pattern, then using photoresist layer as mask, etches the lower electrode material
Layer forms lower electrode.Wherein, whole bottoms of the lower electrode covering other than discharging the region of through-hole as sacrificial material layer are empty
Chamber.After forming the lower electrode, photoresist layer is removed.
Further, as shown in Figure 2 D, when being covered with passivation layer 205 on first pad 2041, in passivation layer 205
In be formed with the opening for exposing the first pad 2041, under the part being subsequently formed electrode cover the opening side wall and bottom simultaneously
It is electrically connected with first pad.
Further, the material of piezoelectric layer 2072 can use ZnO, AlN, GaN, lead zirconate titanate, lead titanates etc. to have fibre
The piezoelectric material of zinc ore type crystalline texture, in this implementation, preferably with AlN as piezoelectric layer.
It can deposit to form the piezoelectric layer 2072 using any suitable method well known to those skilled in the art, such as
The methods of chemical vapor deposition, physical vapour deposition (PVD) or atomic layer deposition can be used.
Wherein, for the thickness of piezoelectric layer 2072, it can be set according to target resonance frequency, preferably be set as wavelength
1/2 or so.
Illustratively, the method for forming the piezoelectric layer 2072 includes：It forms piezoelectric material and covers the lower electrode, so
Afterwards, patterned mask layer is formed on piezoelectric layer 2072, definition has the pattern of the piezoelectric layer 2072 of predetermined formation, then with the figure
The mask layer of case is mask, etches the piezoelectric material, and to form piezoelectric layer 2072, finally, removal is described patterned to be covered
Film layer.
Further, the section shape of the piezoelectric layer can be trapezoidal, wherein the trapezoidal a side and the substrate
Surface it is vertical, the angle on the surface of another side wall and the substrate is acute angle, the section shape of the piezoelectric layer only as an example,
The present invention, such as rectangle are applied equally to for other shapes.
Then, step 3 is executed, as shown in Figure 2 E, in the part surface and the substrate 201 of the piezoelectric layer 2072
Part surface form top electrode 2073, and expose the part surface of the sacrificial material layer 2061,2073 He of the top electrode
2071 top and the bottom of the lower electrode overlapping.
Illustratively, the plan view shape of the top electrode 2073 is the parallel polygon in arbitrary both sides, such as quadrangle, five
Side shape, hexagon, heptagon or octagon etc. especially can be parallelogram.
Wherein, top electrode 2073 can part be covered on bottom cavity, be filled with expendable material in bottom cavity
Layer, then top electrode is located above sacrificial material layer, and the overlapping region of lower electrode and top electrode is entirely located in above bottom cavity.
In one example, the method for forming the top electrode 2073 includes：Upper electrode material layer is deposited, the base is covered
Bottom, for example, covering part separation layer 202, passivation layer 205, piezoelectric layer 2072 form pattern on upper electrode material layer later
The mask layer of change, definition have the pattern of top electrode, then using the patterned mask layer as mask, etch the upper electrode material
Layer, to form top electrode 2073, finally, removes patterned mask layer.
Further, one end of top electrode is extended outwardly into from the piezoelectric layer on the second pad 2042, so as to power on
Pole is electrically connected with second pad, wherein when being covered with passivation layer 205 on second pad, formed top electrode it
Before, further include：The step of forming the opening for exposing the second pad in the passivation layer, the top electrode covers the bottom of the opening
It is electrically connected with side wall and with second pad.
Wherein, the material of the top electrode 2073 can use conductive material or semi-conducting material, wherein conductive material can
Think that the metals such as aluminium (Al), copper (Cu), golden (Au), platinum (Pt) can be used in the metal material of conductive energy, metal material
Or the alloy with metal and copper etc..Si, Ge, SiGe, SiC, SiGeC etc. can be used in semi-conducting material.The top electrode 2073
Thickness can be set according to target resonance frequency, preferably be set as 1/10 or so of wavelength.
Top electrode 2073 can pass through low-pressure chemical vapor deposition (LPCVD), plasma auxiliary chemical vapor deposition
(PECVD), metal organic chemical vapor deposition (MOCVD) and atomic layer deposition (ALD) or other advanced deposition techniques are formed.
Wherein, lower electrode 2071, piezoelectric layer 2072 and top electrode 2073 constitute acoustic resonator sound wave resonance it is compound
Film, the sound wave resonance laminated film can also include other film layers except above-mentioned several film layers, can be according to actual device
Rationally it is arranged, herein and is not particularly limited.
Then, step 4 is executed, as shown in Figure 2 F, forms dielectric layer 208, to cover the front of the substrate 201, and
The top surface of the dielectric layer 208 is higher than the top surface of the top electrode 2073.FBAR is set to meet institute by subsequent lithography and etching
Need boundary condition；
The material of dielectric layer 208 can include but is not limited to Si oxide or silicon nitride, such as SiO2, carbon fluorination close
Object (CF), carbon doped silicon oxide (SiOC), silicon nitride (SiN) or carbonitride of silicium (SiCN) etc..Alternatively, can also use in carbon fluorine
The film etc. of SiCN films is formd in compound (CF).Fluorocarbon is with fluorine (F) and carbon (C) for main component.Carbon fluorination is closed
Object can also use the substance with noncrystal (amorphism) construction.
Any depositing operation well known to those skilled in the art can be used and form the dielectric layer 208, for example, chemical vapor deposition
Product technique, physical gas-phase deposition etc., wherein chemical vapor deposition method can select thermal chemical vapor deposition (thermal
CVD) manufacturing process or high-density plasma (HDP) manufacturing process.
It can be not specifically limited herein according to the suitable deposition thickness of size selection of the device of predetermined formation.
Then, step 5 is executed, with continued reference to Fig. 2 F, forms the apex cavity 209 through the dielectric layer 208, it is described
The part surface of top electrode 2073 and sacrificial material layer 2061 described in 209 exposed portion of apex cavity.
The apex cavity 209, such as profit can be formed using any suitable method well known to those skilled in the art
With photoetching process, the mask layer that definition has the pattern of apex cavity 209 is formed over the dielectric layer 208, using the mask layer as mask
The dielectric layer 208 is etched, the mask layer is finally removed to form apex cavity 209 until exposing top electrode 2073.
Illustratively, as shown in figure 3, the cross-sectional shape of the apex cavity 209 is the parallel polygon in arbitrary both sides,
Such as quadrangle, pentagon or hexagon etc., especially can be parallelogram.The cross section refers to the surface with substrate
Parallel face is gone to cut the interface that the apex cavity 209 is obtained.
Wherein, the size of apex cavity can also be more than the size of the bottom cavity, and the bottom is filled in expose
Partial sacrifice material layer in portion's cavity.
Then, step 6 is executed, as shown in Figure 2 G, is formed in the dielectric layer 208 and exposes the bonding welding pad 2043
Opening 210.
The method for wherein forming opening 210 can use any suitable method well known to those skilled in the art, such as
The pattern of opening is defined by photoetching process, forms patterned mask layer on the dielectric layer, then using mask layer as mask, is etched
The dielectric layer 208, until exposing the bonding welding pad 2043, which can be dry etching or wet etching, wherein
The opening is also annular, such as circular ring shape or side's annular due to exposing the bonding welding pad 2043, plan view shape
Etc. shapes.
The effect of opening 210 is to expose bonding welding pad, convenient for the bonding of follow-up bonding welding pad and bonding ring.
Then, it executes step 7 and provides block substrate 300 as shown in figure 2i, groove is formed on the block substrate
302 and around the groove 302 protrude bonding ring 301.
The material of the block substrate 300 can be arbitrary semiconductor substrate, such as body silicon substrate, can also be with
Under at least one of the material that is previously mentioned：Si, Ge, SiGe, SiC, SiGeC, InAs, GaAs, InP or other III/Vization
Object semiconductor is closed, further includes the multilayered structure etc. that these semiconductors are constituted, or be silicon-on-insulator (SOI), insulator upper layer
Stacking SiGe (S-SiGeOI), germanium on insulator SiClx (SiGeOI) and germanium on insulator on folded silicon (SSOI), insulator
(GeOI), or can also be twin polishing silicon chip (Double Side Polished Wafers, DSP), or oxidation
Ceramic bases, quartz or substrate of glass of aluminium etc. etc..
Optionally, the opening 210 in the bonding ring 301 and the dielectric layer 208 matches, for example, the ruler of opening 210
The very little size that can be more than bonding ring 301, so that in follow-up bonding, the bonding ring is inserted into the opening 210
In and engaged with bonding welding pad.
Further, the height of the bonding ring 301 can also be made to be more than the depth of the opening 210, so that bonding ring
301 can contact with the bonding welding pad of 210 bottoms of opening.
In one example, the top of the bonding ring 301 includes bonding material layer 3011.
In one example, as shown in Fig. 2 H to Fig. 2 J, the method for forming the bonding ring 301 and the groove includes：
First, as illustrated in figure 2h, bonding material layer 3011 is formed, to cover the surface of the block substrate 300.Wherein,
The bonding material layer 3011 includes the material that can be mutually bonded with the bonding welding pad, such as can be formed with bonding welding pad altogether
The material of crystalline substance bonding.Illustratively, the bonding material layer 3011 can include but is not limited in the materials such as Au, Sn, Ge, Si
At least one, the bonding material layer that can be specifically suitble to according to the material selection of bonding welding pad, for example, in the bonding welding pad
Material when including Al, the material of bonding material layer may include at least one of Cu, Ge or Si, can also be the key
The material for closing pad includes Au, then the material of bonding material layer may include at least one of Si, Sn, Ge.
The thickness of the bonding material layer 3011 can need to carry out reasonable set according to actual process, not do herein specific
It limits.
The bonding material layer can be formed using any deposition method well known to those skilled in the art, such as magnetic control splashes
It penetrates, the methods of physical vapour deposition (PVD) or vapor deposition.
Then, patterned mask layer, the patterned mask are formed on the surface of the bonding material layer 3011
The pattern of predetermined the bonding ring and groove formed of layer definition, namely it is predetermined as bonding ring in the patterned mask layer covering
Region, and expose the predetermined region by etching the groove formed.
Patterned photoresist layer can be formed on the surface of the bonding material layer 3011 by photoetching process.
Then, as shown in Fig. 2 I and Fig. 2 J, using the patterned mask layer as mask, it is sequentially etched the bonding material
Layer 3011 and the part block substrate 300 can be to form the bonding ring 301 and the groove 302, the etching
Dry etching or wet etching, preferably with dry etching, wherein the bonding ring 301 and the bonding welding pad 2043
Match.Finally, the patterned mask layer is removed.
Then, step 8 is executed as shown in figure 2k to engage the bonding ring 301 and the bonding welding pad 2043, with
Realize the engagement of the block substrate 300 and the substrate 201, and apex cavity 209 described in the groove sealing cover.
Specifically, the bonding ring 301 is inserted into opening and is in contact with the bonding welding pad 2043, and execution key
Technique is closed, the bonding material layer 3011 being bonded on ring 301 and bonding welding pad 2043 are melted and contacted with each other, after diffusion
The liquid phase alloy with eutectic composition, such as aluminium germanium liquid phase alloy are formed, with the lengthening of diffusion time, liquid phase alloy-layer is continuous
It thickeies, the metal after cooling in liquid phase alloy-layer is grown up based on the original solid phase of oneself again, is constantly alternately precipitated two kinds
Metal is formed as more stable crystal structure, to realize bonding.
Wherein, the parameter of bonding technology can be according to the bonding material of actual use such as bonding temperature, time and pressure
Depending on the material of layer and the material of bonding welding pad, it is, for example, possible to use 420 DEG C to 480 DEG C of bonding temperature, bonding time 2
Minute to 20 minutes, for example, 5min, 10 minutes, 15 minutes etc., bonding pressure can be 5000mbar~8000mbar etc..
Wherein, on block substrate groove size be more than apex cavity 209 size so that whole apex cavities 209
By sealing cover in the groove.
It is noted that the above method is illustrated only realizes block lining by bonding welding pad and bonding ring are bonded
One kind in the method engaged between bottom and substrate, for other bonding methods, such as Si V groove technique, example
Such as, Si-Si, Si-SiO2And SiO2-SiO2Bonding etc. is applied equally to the present invention.
Then, it executes step 9 and removes the sacrificial material layer as shown in figure 2m.
In one example, after engaging the bonding ring 301 and the bonding welding pad 2043, removal is described sacrificial
Before domestic animal material layer 2061, as shown in figure 2l, further include：Interconnection structure 211 is formed at the back side of the substrate, to be electrically connected respectively
The lower electrode 2071 and the top electrode 2073 are connect, illustratively, first pad is electrically connected in the lower electrode 2071
2041, and when the top electrode 2073 is electrically connected second pad, the interconnection structure 211 can then be electrically connected described
First pad 2041 and second pad 2042, and then realize the electrical connection with lower electrode and top electrode respectively.
The interconnection structure 211 can be formed using any suitable method well known to those skilled in the art, it is described mutual
It further includes the plug to be formed in the substrate to link structure 211, which is electrically connected first pad and the second pad,
And it is formed in the interconnecting metal layer of substrate back.Wherein, the material of the interconnection structure 211 can be with any suitable metal material
Material, including but not limited to copper, gold, tungsten, aluminium etc..
Wherein, which can also include the interconnecting metal layer of multilayer and be electrically connected the interconnection gold of adjacent layer
Belong to the plug of layer.
In one example, before forming the interconnection structure 211, it is also an option that property to the back side of the substrate
It is thinned.The thinned method can be the methods of chemical mechanical grinding or etching, be not specifically limited herein.
It in one example, can also be before block substrate be engaged with substrate, in the channel bottom shape of block substrate
At release aperture (not shown), which runs through the block substrate, for subsequently removing sacrificial material layer.
Alternatively, in another example, as shown in figure 2m, after engaging block substrate with substrate, being formed and running through institute
The release aperture 303 for stating apex cavity 209 described in 300 exposed portion of block substrate, can be by well known to those skilled in the art
Any suitable method forms the release aperture, such as etches the block substrate 300 using photoetching process and etching technics.
In other embodiments, it can also be formed and run through from the back side of substrate after the back side to substrate is thinned
At least one release aperture of the substrate and exposed portion sacrificial material layer.
The quantity of release aperture above-mentioned can according to actual process need carry out reasonable set, such as can be 1,2
It is a, 3,4,5 etc..
After forming release aperture, the sacrificial material layer is removed, specifically, as shown in figure 2m, wherein can be by wet
Method etches or the method for dry etching removes the sacrificial material layer, wherein the etching agent of the wet etching passes through described
Release aperture 303 (as shown in arrow in Fig. 2 M) enters by the apex cavity 209 of 300 sealing cover of block substrate, with institute
The sacrificial material layer contact exposed in apex cavity 209 is stated, the sacrificial material layer is removed with etching, discharges the bottom
Cavity 206.Wherein, as shown in figure 3, piezoelectric layer 2072 described in the only covering part of top electrode 2073 in apex cavity 209 and under
Electrode 2071, and the release channel for maintaining sacrificial material layer is exposed in apex cavity 209, once there is etching agent to enter
It is in contact in apex cavity and with the sacrificial material layer, then etching agent can perform etching sacrificial material layer, and the etching
Agent has the sacrificial material layer to the top electrode, the lower electrode, the substrate, the block substrate and the piezoelectricity
The high etching selectivity of layer etc. will not also damage other exposed film layers while being performed etching to sacrificial material layer.
Illustratively, the etching agent being suitble to according to the material selection of sacrificial material layer performs etching sacrificial material layer, example
When such as sacrificial material layer including silicon nitride, the phosphoric acid of heat can be used to be used as etching agent, the wet method removal sacrificial material layer.
After sacrificial material layer is removed, the bottom cavity 206 is obtained.Wherein, as shown in figure 3, apex cavity
209 and bottom cavity 206 it is opposite, and cross-sectional shape can be polygon, and apex cavity 209 and bottom cavity 206 have upper
(effective coverage being alternatively referred to as overlapped up and down, the effective coverage refer to and top electrode, piezoelectric layer and lower electrode for the part of lower overlapping
The upper and lower corresponding region in overlapping region), the part of the overlapping forms a common inner circumferential, and the common inner circumferential is in the piezoelectricity
It is projected as polygon, such as quadrangle, pentagon, hexagon, heptagon, octagon etc. in plane where layer, and this is more
Side shape should not include any pair of Line Segment relatively.The water generated in order to avoid sound wave resonance laminated film any point
Even tone wave resonance, the boundary that horizontal direction propagates to the common inner circumferential of polygon generate reflection and continuously propagate, reflect generation derivative
Horizontal resonant, the common inner circumferential of the polygon should not include any pair of opposite and Line Segment.
Then, as shown in figure 2n, it also needs to form sealing material 304, to fill the release aperture, seals the apex cavity
209, it is less than 1Mbar, to ensure the normal work of device, further so that apex cavity 209 is kept vacuum sealing, vacuum degree
Ground, the sealing material 304 also further cover the top surface of the block substrate 300.
Any sealing material well known to those skilled in the art may be used in sealing material 304, such as silica etc. is close
Material identical with dielectric layer can also be used in closure material 304.
So far the introduction for completing the crucial manufacturing method of the semiconductor devices to the present invention, for the system of complete device
Other previous steps, intermediate steps or subsequent step are also needed, this will not be repeated here.
In conclusion the manufacturing method of the thin film bulk acoustic wave resonator of the present invention, is exposed by formation through the substrate
The release aperture of the part sacrificial material layer, alternatively, forming releasing through apex cavity described in block substrate exposed portion
Discharge hole, the release aperture discharge structure, without being re-formed in lower electrode, piezoelectric layer and top electrode for removing sacrificial material layer
Release aperture for removing sacrificial material layer, thus it is guaranteed that the continuity of lower electrode, piezoelectric layer and top electrode, improves thin
The resonance performance of membrane body acoustic resonator, and the new mask of release aperture is not necessarily formed, technique is simpler, has saved work
Skill cost.
Embodiment two
The present invention also provides a kind of manufacturing method of thin film bulk acoustic wave resonator, shown in this method and previous embodiment one
The identical step of method, do not do specifically repeat herein, elaborate only for the significantly different step of two methods.
Specifically, the manufacturing method of the thin film bulk acoustic wave resonator in the present embodiment is done in detail below with reference to Fig. 4 A to Fig. 4 E
It describes in detail bright.
Illustratively, the manufacturing method of thin film bulk acoustic wave resonator of the invention, including：
First, it executes step 1 and provides substrate 201 as shown in Fig. 2A to Fig. 2 D, bottom is formed in the substrate 201
Portion's cavity is filled with sacrificial material layer 2061 in the bottom cavity；Wherein, bottom cavity and sacrificial material layer 2061 are formed
Method can refer to previous embodiment.
In one example, further include forming separation layer 202 in the front of the substrate before forming bottom cavity.
Further, before forming the lower electrode, the first pad 2041 of formation and the second pad 2042, described first
Pad 2041 and second pad 2042 are located at the both sides of the bottom cavity, lower electrode electrical connection first weldering
Disk, the top electrode are electrically connected second pad.Specifically, the method for forming the first pad and the second pad can be before use
The method in embodiment one is stated, in the present embodiment, not necessarily forms the bonding welding pad of previous embodiment one.
In one example, further include forming passivation layer after forming the first pad 2041 and the second pad 2042
205, cover 2041 and second pad 2042 of the first pad.
Then, execute step 2, as shown in Fig. 2 D to Fig. 2 E, the sacrificial material layer 2061 part surface and
Lower electrode 2071, piezoelectric layer 2072 and top electrode 2073, the top electrode are sequentially formed on the part surface of the substrate 201
2073 and 2071 top and the bottom of lower electrode overlapping.
Then, step 3 is executed, as shown in Fig. 2 F and Fig. 4 A, dielectric layer 208 is formed, to cover the substrate 201
Front, and the top surface of the dielectric layer 208 is higher than the top surface of the top electrode 2073；Made by subsequent lithography and etching
FBAR meets required boundary condition；
Then, step 4 is executed, the apex cavity 209 through the dielectric layer 208 is formed, the apex cavity 209 reveals
Go out the part top electrode 2073；The specific method etc. for forming apex cavity 209 can refer to previous embodiment one.
Then, execute step 5 provide block substrate 300 as shown in Figure 4 A and 4 B shown in FIG., by the block substrate 300 with
The side that the substrate 201 is formed with the dielectric layer 208 engages.
Illustratively, as shown in Figure 4 B, the block substrate 300 and the substrate 201 are formed with the dielectric layer
The method that 208 side engages includes：By the block substrate 300 and 208 Direct Bonding of the dielectric layer, can pass through
Such as Si V groove technique, for example, Si-Si, Si-SiO2And SiO2-SiO2The bonding methods such as bonding are realized.
Bonding rear cover hat lining bottom 300 seals the apex cavity 209, forms closed vacuum chamber.
Then, step 6 is executed the back side of the substrate 201 is thinned as shown in Figure 4 C.
Any suitable technique can be used to execute being thinned for this step, such as mechanical lapping (grinding) technique, change
Learn mechanical milling tech or etching technics etc..The thickness of substrate after being thinned can carry out reasonable set according to actual process,
For example, be thinned after substrate 100 thickness between 10 μm to 100 μm, can also be according to the difference of technology node, the thickness
Respective change is not specifically limited herein.
Then, it executes step 7 and forms at least one release aperture 212 at the back side of substrate, the release aperture as shown in Figure 4 D
Through sacrificial material layer described in the substrate exposed portion.
Substrate 201 described in the back-etching of photoetching process and etching technics from the substrate can be utilized, until running through
State sacrificial material layer described in substrate exposed portion.
In another example, the block substrate can also be etched, the shape in the block substrate opposite with apex cavity
At release aperture, the release aperture is through apex cavity described in the block substrate and exposed portion.
Then, step 8 is executed, continues as shown in Figure 4 D, to remove the sacrificial material layer, to discharge structure, obtains bottom
Cavity 206.
The method of any suitable dry etching or wet etching can be used to remove the sacrificial material layer, preferably
The sacrificial material layer is removed using wet etching, etching agent is connect by release aperture 212 with sacrificial material layer during wet etching
It touches, and then corrodes sacrificial material layer, remove it.Etching agent used in the etching can refer to previous embodiment one.
Then, step 9 is executed, with reference to figure 4E, sealing material 213 is formed, fills the release aperture 212.
Wherein, when the back side of substrate forms release aperture, sealing material fills the release aperture, empty to seal the bottom
Chamber 206 makes bottom cavity 206 keep vacuum sealing, and to ensure the normal work of device, further, the sealing material 213 is also
Further cover the back side of the substrate 201.
Any sealing material well known to those skilled in the art may be used in sealing material 213, such as silica etc. is close
Material identical with dielectric layer can also be used in closure material 213.
In one example, when forming release aperture in block substrate, then the sealing material fills the release aperture.
Then, interconnection structure 211 is formed at the back side of the substrate, to be electrically connected the lower electrode 2071 and described
Top electrode 2073 is illustratively electrically connected first pad 2041 in the lower electrode 2071, and the top electrode 2073 is electric
When connecting second pad 2042, the interconnection structure 211 can then be electrically connected first pad 2041 and described
Second pad 2042, and then realize the electrical connection with lower electrode and top electrode respectively.
In one example, it includes being formed to run through first above the first pad and the second pad respectively to form interconnection structure
The through-hole of the sealing material 213 and part of substrate 201, the through-hole expose first pad 2041 and described second respectively
Then pad 2042 fills conductive material in the through-hole, to form plug, form wiring layer at the back side of substrate later, with
It is electrically connected corresponding plug.
So far, the explanation and illustration to manufacturing method in the present embodiment is completed, may be used also for the preparation of complete device
It can include the steps that other, not do repeating one by one herein.
The manufacturing method of the present embodiment equally has the advantages that the manufacturing method of previous embodiment one.
Embodiment three
The present invention also provides a kind of thin film bulk acoustic wave resonator, which can be by previous embodiment one
In method prepare.
In the following, the thin film bulk acoustic wave resonator of the present invention is described in detail and is illustrated with reference to figure 2N and Fig. 3, it is worth mentioning
, in order to avoid repeating, the identical component with previous embodiment one and structure are only briefly described, it is specific to solve
It releases and illustrates to can refer to the description in embodiment one.
Specifically, thin film bulk acoustic wave resonator of the invention includes substrate 201, wherein the substrate include front and with just
The opposite back side in face.
Further, further include the bottom cavity 206 being formed in substrate 201, wherein the bottom cavity, described in
Facing down for substrate is recessed in the substrate.
Illustratively, the cross-sectional shape of the bottom cavity 206 is the parallel polygon in arbitrary both sides.The cross section is
Refer to and goes to the section that section bottom cavity is obtained with the face parallel with the surface of substrate.
In one example, thin film bulk acoustic wave resonator further includes lower electrode 2071, is formed in the front of substrate 201 simultaneously
Cover at least partly bottom cavity 206.
Illustratively, it is provided with piezoelectric layer 2072 on the lower electrode, is provided with and powers on the piezoelectric layer 2072
Pole 2073, wherein the piezoelectric layer covers the lower electrode 2071, and the lower electrode 2071 is isolated with top electrode 2073, can
Selection of land, piezoelectric layer 2072 described in 2073 covering part of top electrode.
Further, as shown in figure 3, it is the part-structure schematic plan of FBAR, in the plane by the vertical view
Divide into orthogonal X-axis and Y-axis, the lower electrode 2071, the piezoelectric layer 2072 and the top electrode 2073 vertical view
Shape is the parallel polygon in arbitrary both sides, for example, quadrangle, pentagon or hexagon etc., the lower electrode 2071 covers
Bottom cavity 206 described in cover, for example, the lower electrode covers whole bottom cavities 206 along Y-direction, and in the X direction then
Expose the bottom cavity 206 positioned at both ends, and with electrode at present and the overlapping of 2072 top and the bottom of piezoelectric layer, piezoelectric layer 2072 can be with
In the directions Y, the lateral extension of downward electrode divides length.
Wherein, the material of the top electrode 2073 and lower electrode 2071 can use conductive material or semi-conducting material,
In, conductive material can be the metal material of conductive energy, and aluminium (Al), copper (Cu), golden (Au), platinum can be used in metal material
Metals or the alloys with metal and copper etc. such as golden (Pt).Si, Ge, SiGe, SiC, SiGeC etc. can be used in semi-conducting material.It is described
The thickness of top electrode 2073 and lower electrode 2071 can be set according to target resonance frequency, preferably top electrode 2073 and lower electrode
2071 thickness can be set as 1/10 or so of wavelength.
Further, the material of piezoelectric layer 2072 can use ZnO, AlN, GaN, lead zirconate titanate, lead titanates etc. to have fibre
The piezoelectric material of zinc ore type crystalline texture, in this implementation, preferably with AlN as piezoelectric layer.
Wherein, for the thickness of piezoelectric layer 2072, it can be set according to target resonance frequency, preferably be set as wavelength
1/2 or so.
In one example, separation layer 202, the bottom are provided between the lower electrode 2071 and the substrate 201
Portion's cavity 206 runs through in the separation layer 202 to the substrate 201.
In one example, it is also formed with bonding welding pad 2043 in the front of the substrate, is formed in the substrate 201
Front, wherein the plan view shape of the bonding welding pad 2043 in a ring, and around the bottom cavity 206.
In one example, thin film bulk acoustic wave resonator of the invention further includes：First pad 2041 and the second pad
2042, first pad 2041 and second pad 2042 are located at the bonding welding pad 2043 and the bottom cavity 206
Between substrate 201 on, and positioned at the lower section of the lower electrode 2071, the lower electrode 2071 is electrically connected first pad
2041, the top electrode 2073 is electrically connected second pad 2042, and is isolated from each other between top electrode and lower electrode.
Illustratively, it is also formed with the first groove, the second groove and third groove in the substrate 201, described first
Pad 2041, the second pad and the bonding welding pad are separately positioned on first groove, second groove and the third
The bottom of groove.
In one example, first groove, second groove and the third groove run through the separation layer 202
To in the substrate 201.
Illustratively, first pad 2041 and second pad 2042 are located at the bottom cavity 206
Both sides, wherein the lower electrode 2071 as the end of exit is located at 2041 surface of the first pad and with described first
Pad is electrically connected, and the top electrode 2073 is located at as the end of extraction section on second pad 2042, and with described second
Pad 2042 is electrically connected, and optionally, plug can also be arranged between first pad 2041 and the lower electrode 2071,
To be electrically connected the first pad 2041 and the lower electrode 2071, set between second pad 2042 and the top electrode 2073
Plug is set, to be electrically connected second pad 2042 and the top electrode 2073.
In one example, further include covering the dielectric layer 208 of the substrate front surface, and the top of the dielectric layer 208
Face is higher than the top surface of the top electrode 2073.
It in one example, can be between the dielectric layer and first pad, the second pad and bonding welding pad
It is selectively provided with passivation layer 205.
In one example, it is provided through the passivation layer 205 in the passivation layer 205 and exposes described first
The opening of pad 2041, wherein one end of the lower electrode 2071 is located at the bottom of the opening and is electrically connected first pad
2041。
In one example, it is provided through the passivation layer 205 in the passivation layer 205 and exposes described second
The opening of pad 2042, wherein one end of the top electrode 2073 is located at the bottom of the opening and is electrically connected second pad
2042。
Further, the passivation layer of separation layer 202 and part described in 208 covering part of the dielectric layer 205.
In one example, further include apex cavity 209, the apex cavity 209 is through the dielectric layer 208 and exposes
At least partly top electrode 2073, wherein described in 2073 covering part of the top electrode when piezoelectric layer 2072, the top
Piezoelectric layer 2072 described in the also exposed portion of cavity 209, wherein not in the top electrode 2073 of the exposing of the apex cavity 209 by portion
The dielectric layer 208 is divided to cover.
Further, the size of the apex cavity 209 can be more than the size of the bottom cavity 206, make part institute
Bottom cavity 206 is stated to be exposed in the apex cavity 209.
It is noted that can be indicated between top electrode 2073 and apex cavity 209 in the rectangular area shown in Fig. 3
The region of lower overlapping.
Optionally, the cross-sectional shape of the apex cavity 209 is the parallel polygon in arbitrary both sides, such as quadrangle,
Pentagon, hexagon, heptagon or octagon etc..
It is noted that in the present invention, top electrode, the plan view shape of lower electrode and piezoelectric layer and bottom cavity and
The cross-sectional shape of apex cavity can also be other suitable shapes.
In one example, side is additionally provided with block substrate 300 on the substrate.
Further, it is provided with groove in the block substrate, apex cavity described in the groove sealing cover.Optionally,
The size of the groove is more than the size of the apex cavity, and all apex cavities can be encapsulated with groove.
Illustratively, further include the bonding ring 301 of protrusion being arranged on the block substrate, 301 He of bonding ring
The bonding welding pad 2043 engages.Wherein, the bonding ring 301 surrounds the groove.Wherein, by block substrate
Etching obtains the bonding ring and the groove.
Optionally, the opening of the exposing bonding welding pad in the bonding ring 301 and the dielectric layer 208 matches,
For example, opening size can be more than bonding ring 301 size, the bonding ring be inserted into the opening and and bonding welding pad
It engages namely the bonding ring is engaged through the dielectric layer with the bonding welding pad.
Further, the height of the bonding ring 301 can also be made to be more than the exposing key in the dielectric layer 208
The depth of the opening of pad is closed, so that bonding ring 301 can be contacted with the bonding welding pad of open bottom.
In one example, the top of the bonding ring 301 further includes bonding material layer 3011, the bonding material layer
3011 be the material that eutectic bonding can be formed with the bonding welding pad.
In one example, as shown in figure 2n, further include release aperture, the release aperture through the block substrate with it is described
Apex cavity is opposite.
Alternatively, in another example, the release aperture is through the substrate is opposite with the bottom cavity namely the release
Hole exposed portion bottom cavity.
Further, as shown in figure 2n, further include sealing material 304, sealing material 304 fills the release aperture, seals
The apex cavity 209 makes apex cavity 209 keep vacuum sealing, and to ensure the normal work of device, further, this is close
Closure material 304 also further covers the top surface of the block substrate 300.
In one example, as shown in figure 2n, it is formed with interconnection structure 211 at the back side of the substrate, to be electrically connected respectively
The lower electrode 2071 and the top electrode 2073 are connect, illustratively, first pad is electrically connected in the lower electrode 2071
2041, and when the top electrode 2073 is electrically connected second pad, the interconnection structure 211 can then be electrically connected institute
The first pad and second pad are stated, and then realizes the electrical connection with lower electrode and top electrode respectively.
Wherein, the material of the interconnection structure 211 can with any suitable metal material, including but not limited to copper, gold,
Tungsten, aluminium etc..
Wherein, which can also include the interconnecting metal layer of multilayer and be electrically connected the interconnection gold of adjacent layer
Belong to the plug of layer.
As shown in figure 3, apex cavity 209 and bottom cavity 206 are opposite, and cross-sectional shape can be polygon, top
Cavity 209 and bottom cavity 206 have part (effective coverage being alternatively referred to as overlapped up and down, the effective coverage being overlapped up and down
Refer to region corresponding with overlapping region above and below top electrode, piezoelectric layer and lower electrode), the part of the overlapping forms one altogether
Same inner circumferential, the common inner circumferential are projected as polygon, such as quadrangle, pentagon, six in the plane where the piezoelectric layer
Side shape, heptagon, octagon etc., and the polygon should not include any pair of Line Segment relatively.In order to avoid sound wave
The horizontal acoustic waves resonance that resonance laminated film any point generates, the boundary that horizontal direction propagates to the common inner circumferential of polygon generate
Reflect and continuously propagate, reflect generate derived from horizontal resonant, the common inner circumferential of the polygon should not comprising it is any pair of relatively and
Parallel straightway.
Due to the thin film bulk acoustic wave resonator of the present invention, do not formed in lower electrode, piezoelectric layer and top electrode for removing
The release aperture of sacrificial material layer, therefore, lower electrode, piezoelectric layer and top electrode have a good continuity, improve thin-film body
The resonance performance of acoustic resonator.
Example IV
The present invention also provides a kind of thin film bulk acoustic wave resonator as shown in Figure 4 E, which passes through
Method in previous embodiment two prepares.Only the thin film bulk acoustic wave resonator is different from previous embodiment three at this
The part of thin film bulk acoustic wave resonator elaborates, other is not done with identical part in previous embodiment herein superfluous
It states.
Thin film bulk acoustic wave resonator in the present embodiment includes：Substrate 201；It is formed in bottom cavity 206 in the substrate；
It is formed in the front of substrate 201 and covers the lower electrode 2071 of at least partly bottom cavity 206；It is arranged in the lower electrode
Piezoelectric layer 2072 on 2071；The top electrode 2073 being arranged on the piezoelectric layer 2072；Cover the positive of the substrate 201
Dielectric layer 208, and the top surface of the dielectric layer 208 is higher than the top surface of the top electrode 2073；Simultaneously through the dielectric layer 208
Expose the apex cavity of at least partly top electrode 2073.
In one example, further include the first pad 2041 and the second pad 2042, first pad 2041 and described
Second pad 2042 is located at the both sides of the bottom cavity 206, and the lower electrode 2071 is electrically connected first pad 2041, institute
It states top electrode 2073 and is electrically connected second pad 2042.Specifically, in the present embodiment, do not include the key of previous embodiment one
Close pad.
Further, further include block substrate 300, setting is provided in the substrate 201, and with the substrate 201
The side of the dielectric layer 208 engages.Wherein, together with the block substrate 300 and 208 Direct Bonding of dielectric layer, the block
Substrate 300 seals the top unprecedented 209.
In one example, further include release aperture, the release aperture is opposite with the bottom cavity 206 and through described
Substrate 201 namely release aperture run through the substrate 201, and bottom cavity 206 described in exposed portion from the back side of substrate 201.
Further, further include sealing material 213, sealing material fills the release aperture, to seal the bottom cavity
206, make bottom cavity 206 keep vacuum sealing, to ensure the normal work of device, further, the sealing material 213 also into
One step covers the back side of the substrate 201.
Then, it is formed with interconnection structure 211 at the back side of the substrate, to be electrically connected the lower electrode 2071 and institute
Top electrode 2073 is stated, illustratively, first pad 2041 is electrically connected in the lower electrode 2071, and the top electrode
When 2073 electrical connection second pad 2042, the interconnection structure 211 can then be electrically connected first pad 2041
With second pad 2042, and then realize the electrical connection with lower electrode and top electrode respectively.
In one example, as shown in figure 3, the cross-sectional shape of the bottom cavity is parallel polygon in arbitrary both sides
Shape；The plan view shape of the lower electrode is the parallel polygon in arbitrary both sides；The plan view shape of the piezoelectric layer is arbitrary both sides
Parallel polygon；The plan view shape of the top electrode is the parallel polygon in arbitrary both sides；The cross section of the apex cavity
Shape is the parallel polygon in arbitrary both sides.
Further, lap forms a common inner circumferential up and down for the apex cavity and the bottom cavity, described
Common inner circumferential piezoelectric layer institute in the plane be projected as irregular polygon, the polygon is not comprising any pair
Parallel straightway relatively.
So far, the explanation and illustration to the thin film bulk acoustic wave resonator of another embodiment of the present invention is completed, it should
Device equally has the advantages that device in previous embodiment.
Embodiment five
A kind of electronic device, including thin film bulk acoustic wave resonator above-mentioned, institute are additionally provided in another embodiment of the present invention
Thin film bulk acoustic wave resonator is stated to be prepared according to method above-mentioned.
The electronic device of the present embodiment can be mobile phone, tablet computer, laptop, net book, game machine, TV
Any electronic product such as machine, VCD, DVD, navigator, Digital Frame, camera, video camera, recording pen, MP3, MP4, PSP is set
Standby or any intermediate products for including circuit.The electronic device of the embodiment of the present invention, due to the use of above-mentioned thin-film body
Acoustic resonator, thus there is better performance.
Wherein, Fig. 6 shows the example of mobile phone handsets.Mobile phone handsets 400, which are equipped with, to be included in shell 401
Display portion 402, operation button 403, external connection port 404, loud speaker 405, microphone 406 etc..
The wherein described mobile phone handsets include the thin film bulk acoustic wave resonator described in embodiment three or example IV, institute
Stating thin film bulk acoustic wave resonator includes：
Substrate；
Bottom cavity is formed in the substrate；
Lower electrode is formed in the front of substrate and covers at least partly described bottom cavity；
Piezoelectric layer is arranged on the lower electrode；
Top electrode is arranged on the piezoelectric layer；
Dielectric layer covers the front of the substrate, and the top surface of the dielectric layer is higher than the top surface of the top electrode；
Apex cavity through the dielectric layer and exposes at least partly described top electrode；
Block substrate, on the substrate, and the side for being provided with the substrate dielectric layer engages for setting；
Release aperture, the release aperture is opposite with the bottom cavity and runs through the substrate, alternatively, the release aperture runs through
The block substrate is opposite with the apex cavity.
The present invention is illustrated by above-described embodiment, but it is to be understood that, above-described embodiment is only intended to
The purpose of citing and explanation, and be not intended to limit the invention within the scope of described embodiment.In addition people in the art
It is understood that the invention is not limited in above-described embodiment, introduction according to the present invention can also be made more kinds of member
Variants and modifications, these variants and modifications are all fallen within scope of the present invention.Protection scope of the present invention by
The appended claims and its equivalent scope are defined.
Claims (20)
1. a kind of manufacturing method of thin film bulk acoustic wave resonator, which is characterized in that including：
Substrate is provided, bottom cavity is formed in the substrate, sacrificial material layer is filled in the bottom cavity；
Sequentially formed on the part surface of the sacrificial material layer and the part surface of the substrate lower electrode, piezoelectric layer and
Top electrode, and expose the part surface of the sacrificial material layer, wherein the top electrode and the lower electrode top and the bottom weight
It is folded；
Dielectric layer is formed, to cover the front of the substrate, and the top surface of the dielectric layer is higher than the top surface of the top electrode；
The apex cavity through the dielectric layer is formed, top electrode and the sacrifice material described in the apex cavity exposed portion
The part surface of the bed of material；
Block substrate is provided, the side that the block substrate is formed with to the dielectric layer with the substrate engages；
Forming at least one release aperture, wherein the release aperture runs through sacrificial material layer described in the substrate exposed portion, or
Person, the release aperture is through apex cavity described in block substrate exposed portion；
Remove the sacrificial material layer.
2. manufacturing method as described in claim 1, which is characterized in that the cross-sectional shape of the bottom cavity is arbitrary both sides
Parallel polygon；
The plan view shape of the lower electrode is the parallel polygon in arbitrary both sides；
The plan view shape of the piezoelectric layer is the parallel polygon in arbitrary both sides；
The plan view shape of the top electrode is the parallel polygon in arbitrary both sides；
The cross-sectional shape of the apex cavity is the parallel polygon in arbitrary both sides.
3. manufacturing method as claimed in claim 1 or 2, which is characterized in that above and below the apex cavity and the bottom cavity
Lap formed a common inner circumferential, the common inner circumferential the piezoelectric layer in the plane be projected as it is irregular more
Side shape, the irregular polygon is not comprising any pair of opposite and parallel straightway.
4. manufacturing method as described in claim 1, which is characterized in that removed by the method for wet etching or dry etching
The sacrificial material layer.
5. manufacturing method as described in claim 1, which is characterized in that be formed with the block substrate and the substrate described
The method that the side of dielectric layer engages includes：
Before forming the bottom cavity, alternatively, after forming the sacrificial material layer, formed before the lower electrode,
Bonding welding pad is formed in the front of the substrate, the plan view shape of the bonding welding pad is in a ring and around the bottom cavity；
Block substrate, the bonding ring that groove is formed on the block substrate and is protruded around the groove are provided；
The opening for exposing the bonding welding pad is formed in the dielectric layer, the opening matches with the ring that is bonded；
Bonding technology is carried out, the bonding ring is mutually bonded with the bonding welding pad, apex cavity described in the groove sealing cover,
To realize that the block substrate and the substrate engage.
6. manufacturing method as described in claim 1, which is characterized in that further include：Before forming the lower electrode, the is formed
One pad and the second pad, first pad and second pad are located at the both sides of the bottom cavity, the lower electrode
It is electrically connected first pad, the top electrode is electrically connected second pad.
7. manufacturing method as described in claim 1, which is characterized in that the top of the bonding ring includes bonding material layer.
8. manufacturing method as described in claim 1, which is characterized in that the block substrate and the substrate are being engaged it
Afterwards, before or after removing the sacrificial material layer, further include：
Interconnection structure is formed at the back side of the substrate, to be electrically connected the lower electrode and the top electrode.
9. manufacturing method as described in claim 1, which is characterized in that sacrificed described in the substrate exposed portion being formed to run through
Before the release aperture of material layer, further include：The back side of the substrate is thinned.
10. manufacturing method as described in claim 1, which is characterized in that form the block substrate and the substrate
Giving an account of the method that the side of electric layer engages includes：
Block substrate is provided, by the block substrate and the dielectric layer Direct Bonding.
11. manufacturing method as described in claim 1, which is characterized in that after removing the sacrificial layer, further include：
It forms sealing material and fills the release aperture.
12. a kind of thin film bulk acoustic wave resonator, which is characterized in that including：
Substrate；
Bottom cavity is formed in the substrate；
Lower electrode is formed in the front of substrate and covers at least partly described bottom cavity；
Piezoelectric layer is arranged on the lower electrode；
Top electrode is arranged on the piezoelectric layer；
Dielectric layer covers the front of the substrate, and the top surface of the dielectric layer is higher than the top surface of the top electrode；
Apex cavity through the dielectric layer and exposes at least partly described top electrode；
Block substrate, on the substrate, and the side for being provided with the substrate dielectric layer engages for setting；
Release aperture, the release aperture is opposite with the bottom cavity and runs through the substrate, alternatively, the release aperture is through described
Block substrate is opposite with the apex cavity.
13. thin film bulk acoustic wave resonator as claimed in claim 12, which is characterized in that the cross-sectional shape of the bottom cavity
For the parallel polygon in arbitrary both sides；
The plan view shape of the lower electrode is the parallel polygon in arbitrary both sides；
The plan view shape of the piezoelectric layer is the parallel polygon in arbitrary both sides；
The plan view shape of the top electrode is the parallel polygon in arbitrary both sides；
The cross-sectional shape of the apex cavity is the parallel polygon in arbitrary both sides.
14. thin film bulk acoustic wave resonator as described in claim 12 or 13, which is characterized in that the apex cavity and the bottom
Lap forms a common inner circumferential to portion's cavity up and down, the common inner circumferential the piezoelectric layer being projected as in the plane
Irregular polygon, the irregular polygon is not comprising any pair of opposite and parallel straightway.
15. thin film bulk acoustic wave resonator as claimed in claim 12, which is characterized in that further include：
It is bonded ring, the setting of protrusion is on the block substrate；
Bonding welding pad is formed in the front of the substrate, wherein the plan view shape of the bonding welding pad in a ring, and surround institute
State bottom cavity, the bonding ring is bonded ring and is mutually bonded through the dielectric layer with described.
16. thin film bulk acoustic wave resonator as claimed in claim 12, which is characterized in that further include：First pad and the second weldering
Disk, first pad and second pad are located on the substrate surface of the bottom cavity both sides, and are located at the lower electricity
The lower section of pole, the lower electrode are electrically connected first pad, and the top electrode is electrically connected second pad.
17. thin film bulk acoustic wave resonator as claimed in claim 12, which is characterized in that the top of the bonding ring includes bonding
Material layer.
18. thin film bulk acoustic wave resonator as claimed in claim 12, which is characterized in that be formed with mutually at the back side of the substrate
Link structure, to be electrically connected the lower electrode and the top electrode.
19. thin film bulk acoustic wave resonator as claimed in claim 12, which is characterized in that further include sealing material, the sealing
Material fills the release aperture.
20. a kind of electronic device, which is characterized in that the electronic device includes as claim 12 to 19 any one of them is thin
Membrane body acoustic resonator.
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