CN108666419A - A kind of complementary type resistance-variable storing device and preparation method thereof based on GeTe - Google Patents
A kind of complementary type resistance-variable storing device and preparation method thereof based on GeTe Download PDFInfo
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- CN108666419A CN108666419A CN201810458251.2A CN201810458251A CN108666419A CN 108666419 A CN108666419 A CN 108666419A CN 201810458251 A CN201810458251 A CN 201810458251A CN 108666419 A CN108666419 A CN 108666419A
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- 229910005900 GeTe Inorganic materials 0.000 title claims abstract description 101
- 230000000295 complement effect Effects 0.000 title claims abstract description 58
- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- 239000010409 thin film Substances 0.000 claims abstract description 58
- 238000000034 method Methods 0.000 claims abstract description 31
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 16
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 28
- 238000004544 sputter deposition Methods 0.000 claims description 28
- 239000007789 gas Substances 0.000 claims description 19
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 16
- 229910052786 argon Inorganic materials 0.000 claims description 14
- 230000005611 electricity Effects 0.000 claims description 14
- 239000012495 reaction gas Substances 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 229910052763 palladium Inorganic materials 0.000 claims description 7
- 229910052697 platinum Inorganic materials 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 4
- 239000010408 film Substances 0.000 claims description 3
- 238000003860 storage Methods 0.000 abstract description 14
- 230000006870 function Effects 0.000 abstract description 5
- 230000005284 excitation Effects 0.000 abstract description 3
- 239000012776 electronic material Substances 0.000 abstract description 2
- 238000005477 sputtering target Methods 0.000 description 12
- 239000013077 target material Substances 0.000 description 12
- 239000003989 dielectric material Substances 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 7
- 238000005265 energy consumption Methods 0.000 description 6
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 230000010354 integration Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 230000007334 memory performance Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
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Abstract
The invention discloses a kind of complementary type resistance-variable storing device and preparation method thereof based on GeTe, is related to novel micro nanometer electronic material and function element field.The complementary type resistance-variable storing device of the present invention includes bottom conductive electrode；GeTe thin film dielectric layers set on bottom conductive electrode upper surface；Top layer conductive electrode set on GeTe thin film dielectric layers upper surface, wherein the bottom conductive electrode, GeTe thin film dielectric layers, top layer conductive electrode are prepared by the method for magnetron sputtering.The present invention makes GeTe thin film dielectric layers that resistance state switching realization complementary type resistive function occur by electric excitation and limitation electric current.Memory proposed by the present invention efficiently solves the electric current cross-interference issue in resistance-variable storing device right-angled intersection array, have the characteristics that preparation method is simple, of low cost, performance is stable, scaling performance is good, there is development potentiality and application value very much in terms of exploitation high storage density, low-power consumption, nano-scale nonvolatile memory.
Description
Technical field
The present invention relates to novel micro nanometer electronic material and function element fields, and in particular to a kind of complementary type based on GeTe
Resistance-variable storing device and preparation method thereof.
Background technology
Conventional flash technology will face a series of technology restrictions and theory after lasting micro to 20nm or less technology nodes
The limit, hardly possible meets the memory requirement of ultra high density, therefore the novel memory technology of exploitation has considerable meaning and value.When
Before, the resistive memory that should be developed based on electroluminescent resistive effect because of simple in structure, fast response time, operation is low in energy consumption, is easy to collect
At and it is non-volatile the features such as, it has also become the contenders of next-generation non-volatile memory technology have broad application prospects.
Resistive memory minimizes and realizes that the integrated main path of ultra high density is to utilize the simple " Sanming City of device
Control " structure, by way of right-angled intersection array (Crossbar Array), structure 3D overlapping shelf structures, storage list each in this way
Member will be contracted to 4F2The size of/n (F is the characteristic size of manufacturing process, and n is the number of plies of right-angled intersection array).However, cross
Because parasitic leakage path is there are the cross-interference issue of universal consecutive storage unit (Crosstalk Problem) in crossed array,
Serious obstacle is brought to resistive memory High Density Integration application.How device right-angled intersection battle array is solved in practical applications
The crosstalk of row, the development and application to the following resistance-variable storing device are most important.Traditional solution is by memory element and one
A selectivity device such as gate tube, diode or transistor etc. are connected to carry out rectification, but this method is faced
Maximum bottleneck be that the current density allowed during rectification is limited, be especially reduced in size to 10nm amounts when rectifying device
This problem is more prominent when grade, and this mode will undoubtedly increase the complexity and cost of device making technics.For
The cross-interference issue for solving right-angled intersection array keeps high density storage characteristics simultaneously, and be born a kind of completely new resistance-variable storing device
Structure-complementary type resistance-variable storing device (Complementary Resistive Switching Memory, CRS).Complementary type hinders
The basic principle of transition storage is inversely to be connected on two memory elements in the crosspoint of array, and one of element is arranged and is
Low configuration and another be high-impedance state, by checker realize " 0 " and " 1 " state, in this way, device is in low bias
High-impedance state will effectively solve the cross-interference issue of right-angled intersection array in the case of non-selectivity element.
Invention content
It is an object of the invention to the deficiencies for existing resistance-variable storing device technology, provide a kind of complementary type based on GeTe
Resistance-variable storing device and preparation method thereof solves resistive device right-angled intersection cross-interference issue.
In order to realize that above-mentioned first purpose of the present invention, the present invention adopt the following technical scheme that：
A kind of complementary type resistance-variable storing device based on GeTe, the memory include bottom conductive electrode；It is led set on bottom
The GeTe thin film dielectric layers of electric electrode top；Top layer conductive electrode set on GeTe thin film dielectric layers upper surface.
Further, the bottom conductive electrode is made of FTO, ITO, ZTO, TaN or TiN.
Further, the bottom conductive electrode thickness is 50~500nm, and shape is round or rectangle, diameter or
The length of side is 10nm~100 μm.
Further, the GeTe thin film dielectrics layer thickness is 5~200nm.
Further, the GeTe thin film dielectric layers shape is round or rectangle, and diameter or the length of side are 10nm~100
μm。
Further, the top layer conductive electrode is made of Pt, Au, Pd, Al, Cu or Ag.
Further, the top layer conductive thickness of electrode is 50~500nm, and shape is round or rectangle, diameter or
The length of side is 10nm~100 μm.
The preparation side of another object of the present invention is to provide the described above complementary type resistance-variable storing device based on GeTe
Method the described method comprises the following steps：
The bottom conductive electrode is prepared in substrate；GeTe thin film dielectric layers are prepared in bottom conductive electrode upper surface；
Top layer conductive electrode is plated in GeTe thin film dielectric layers upper surface.
Further, using the method for magnetron sputtering in the upper surfaces bottom conductive electrode FTO, ITO, ZTO, TaN or TiN
GeTe thin film dielectric layers are prepared, sputtering target material is GeTe targets, and using radio-frequency sputtering, underlayer temperature 300K, reaction gas is argon
Gas, the control indoor air pressure of vacuum are 4Torr, and radio-frequency sputtering power is 120W.
Further, using the method for magnetron sputtering GeTe thin film dielectric layers upper surface prepare Pt, Au, Pd, Al, Cu,
Or Ag top layer conductive electrodes, sputtering target material Pt, Au, Pd, Al, Cu or Ag target, using d.c. sputtering, underlayer temperature 300K,
Reaction gas is argon gas, and the control indoor air pressure of vacuum is 4Torr, sputtering power 100W.
Compared with prior art, the beneficial effects of the present invention are：
(1) a kind of complementary type resistance-variable storing device element based on GeTe proposed by the present invention have it is very simple " metal/
" sandwich " structure of medium/metal ", and traditional complementary type resistance-variable storing device element generally use two " medium/metal/
The storage unit differential concatenation of metal " structure uses the structure with bilayer or multilayer dielectric layer.It will be apparent that of the invention
Enormously simplify the structure of complementary type resistive memory.
(2) present invention makes the generation resistance state switching of GeTe thin film dielectric layers realize complementary type resistance by electric excitation and limitation electric current
Become function, and the complementary type resistance-variable storing device element based on GeTe of the present invention need not introduce transistor, diode or gating
The additional selection element such as pipe can effectively solve the electric current cross-interference issue of right-angled intersection array memory part, be conducive to improve device
Storage density, also simplify device prepare the step of and reduce device preparation cost.
(3) a kind of complementary type resistance-variable storing device element based on GeTe proposed by the present invention uses traditional magnetron sputtering method
It prepares, preparation process is easy to control, and preparation process is simple, and manufacturing cost is relatively low, has the simultaneous of height with traditional cmos process
Capacitive is easy to High Density Integration, and memory performance obtained is stable, scaling performance is good.
(4) a kind of complementary type resistance-variable storing device element based on GeTe proposed by the present invention is that storage is situated between with GeTe materials
Matter, material is rich and easy to get, is not necessarily to high-temperature heat treatment, and energy conservation and environmental protection in device microization and promotes right-angled intersection array resistive to deposit
It has very important significance in terms of the practical application of reservoir.
Description of the drawings
Fig. 1 is the sectional view of complementary type resistance-variable storing device of the present invention；
Fig. 2 is the I-E characteristic figure of the complementary type resistance-variable storing device described in the embodiment of the present invention 1；
Fig. 1 is illustrated：1-Pt electrodes；2-GeTe thin film dielectric layers；3-TiN electrodes.
Specific implementation mode
Technical scheme of the present invention is described in detail below by specific embodiment and attached drawing.Following reality
It is preferred embodiments of the present invention to apply example only, is not the restriction that other forms are done to the present invention, any skill for being familiar with this profession
The equivalent embodiment that art personnel are changed to change on an equal basis possibly also with the technology contents of the disclosure above.It is every without departing from this hair
Bright plan content, any simple modification made according to the technical essence of the invention to following embodiment or equivalent variations, fall
Within the scope of the present invention.
The complementary type resistance-variable storing device based on GeTe of the present invention, the memory includes bottom conductive electrode；The bottom of set on
The GeTe thin film dielectric layers of layer conductive electrode upper surface；Top layer conductive electrode set on GeTe thin film dielectric layers upper surface.
The bottom conductive electrode is made of FTO, ITO, ZTO, TaN or TiN, preferably TiN, the bottom conductive electrode
Thickness is 50~500nm, preferably 200nm；Shape is round or rectangle, and diameter or the length of side are 10nm~100 μm, and shape is excellent
It is preferably 0.4 μm~4.0 μm to select rectangle, diameter or the length of side.
The GeTe thin film dielectrics layer thickness is 5~200nm, and preferably 20nm, shape is round or rectangle, preferably square
Shape, diameter or the length of side be 10nm~100 μm, preferably 0.4 μm~4.0 μm.
The top layer conductive electrode is made of Pt, Au, Pd, Al, Cu or Ag, preferably Pt, and thickness is 50~500nm, preferably
250nm, shape are round or rectangle, preferably rectangle, and diameter or the length of side are 10nm~100 μm, preferably 0.4 μm~4.0 μm.
The complementary type resistance-variable storing device of the present invention makes GeTe thin film dielectric layers that resistance state occur by electric excitation and limitation electric current
Complementary type resistive function is realized in switching.The memory efficiently solves the electric current crosstalk in resistance-variable storing device right-angled intersection array
Problem has the characteristics that preparation method is simple, of low cost, performance is stable, scaling performance is good, in exploitation high storage density, low
There is development potentiality and application value very much in terms of power consumption, nano-scale nonvolatile memory.
Embodiment 1
As shown in Figure 1, a kind of complementary type resistance-variable storing device based on GeTe of the present embodiment, the memory includes bottom
Conductive electrode 3；GeTe thin film dielectric layers 2 set on bottom conductive electrode upper surface；Set on GeTe thin film dielectric layers upper surface
Top layer conductive electrode 1；
The bottom conductive electrode 3 is made of TiN, thickness 200nm, and shape is rectangle, and the length of side is 0.4 μm；
2 thickness of GeTe thin film dielectric layers is 20nm, and shape is rectangle, and the length of side is 0.4 μm；
The top layer conductive electrode 1 is made of Pt, thickness 250nm, shape rectangle, and the length of side is 0.4 μm.
The preparation method of complementary type resistance-variable storing device based on GeTe described above, includes the following steps：
The bottom conductive electrode is prepared in substrate；GeTe thin film dielectric layers are prepared in bottom conductive electrode upper surface；
Top layer conductive electrode is plated in GeTe thin film dielectric layers upper surface.
The method that the above method specifically uses magnetron sputtering prepares GeTe thin film dielectrics in the upper surfaces bottom conductive electrode TiN
Layer, sputtering target material are GeTe targets, and using radio-frequency sputtering, underlayer temperature 300K, reaction gas is argon gas, and control vacuum is indoor
Air pressure is 4Torr, and radio-frequency sputtering power is 120W.
The method that the above method specifically uses magnetron sputtering prepares Pt top layer conductive electricity in GeTe thin film dielectric layers upper surface
Pole, sputtering target material are Pt targets, and using d.c. sputtering, underlayer temperature 300K, reaction gas is argon gas, control the indoor gas of vacuum
Pressure is 4Torr, sputtering power 100W.
The complementary type resistance-variable storing device I-E characteristic figure of the above-mentioned preparation of the present embodiment as shown in Fig. 2, as shown in Figure 2,
The storage characteristics of the complementary type resistance-variable storing device (V in suitable voltage rangeth3, Vth1) there are two opposite polarity height for tool
Resistance state, HRS+And HRS-Respectively represent two opposite polarity high-impedance states positively and negatively.Wherein, high-impedance state HRS is born-
(Vth4, Vth1) it is kept in bias range, when being applied more than Vth1 and be less than VthAfter 2 positive bias, high-impedance state HRS is born-Become
Low resistance state LRS.Positive high-impedance state HRS+In (Vth3, Vth2) it is kept in bias range, when being applied more than Vth4 and be less than Vth3 it is negative
After bias, positive high-impedance state HRS+Become low resistance state LRS.Therefore, it can define in (Vth4, Vth1) the negative high-impedance state HRS stablized-For device
The one state of part, and in (Vth3, Vth2) stablize positive high-impedance state HRS in+For " 0 " state of device." 0 " and one state can lead to
It crosses and applies (a Vth1, Vth2) bias between identifies.It is also known by Fig. 2, as one (V of applicationth1, Vth2) inclined between
When pressure, at this time " 0 " represent positive high-impedance state HRS+Still keep high-impedance state, and the negative high-impedance state HRS that " 1 " represents-Then become low resistance state
LRS, the i.e. reading of " 1 " have destructiveness, need to apply one no more than Vth4 back bias voltage makes it be restored to the negative of " 1 " representative
High-impedance state HRS-." 0 " of the complementary type resistance-variable storing device and one state store all in the form of high-impedance state, without additional selection member
Part can eliminate the electric current cross-interference issue in right-angled intersection array, be conducive to the exploitation of ultra high density, low energy consumption memory.
Embodiment 2
A kind of complementary type resistance-variable storing device based on GeTe of the present embodiment, including bottom conductive electrode；It is led set on bottom
The GeTe thin film dielectric layers of electric electrode top；Top layer conductive electrode set on GeTe thin film dielectric layers upper surface.
The bottom conductive electrode is made of TiN, thickness 200nm, and shape is rectangle, and the length of side is 0.6 μm.
The GeTe thin film dielectrics layer thickness is 20nm, and shape is rectangle, and the length of side is 0.6 μm.
The top layer conductive electrode is made of Pt, thickness 250nm, shape rectangle, and the length of side is 0.6 μm.
The preparation method of the present embodiment complementary type resistance-variable storing device described above based on GeTe, includes the following steps：
The bottom conductive electrode is prepared in substrate；GeTe thin film dielectric layers are prepared in bottom conductive electrode upper surface；It is thin in GeTe
Film medium layer upper surface plates top layer conductive electrode.
The method that the above method specifically uses magnetron sputtering prepares GeTe thin film dielectrics in the upper surfaces bottom conductive electrode TiN
Layer, sputtering target material are GeTe targets, and using radio-frequency sputtering, underlayer temperature 300K, reaction gas is argon gas, and control vacuum is indoor
Air pressure is 4Torr, and radio-frequency sputtering power is 120W.
The method that the above method specifically uses magnetron sputtering prepares Pt top layer conductive electricity in GeTe thin film dielectric layers upper surface
Pole, sputtering target material are Pt targets, and using d.c. sputtering, underlayer temperature 300K, reaction gas is argon gas, control the indoor gas of vacuum
Pressure is 4Torr, sputtering power 100W.
The I-E characteristic figure and Fig. 1 of the complementary type resistance-variable storing device of the present embodiment are essentially identical, by the present embodiment
I-E characteristic figure it is found that the complementary type resistance-variable storing device storage characteristics in suitable voltage range (Vth3, Vth1)
There are two opposite polarity high-impedance state, HRS for tool+And HRS-Respectively represent two opposite polarity high-impedance states positively and negatively.Its
In, bear high-impedance state HRS-In (Vth4, Vth1) it is kept in bias range, when being applied more than Vth1 and be less than VthAfter 2 positive bias,
Negative high-impedance state HRS-Become low resistance state LRS.Positive high-impedance state HRS+In (Vth3, Vth2) it is kept in bias range, when being applied more than
Vth4 and be less than VthAfter 3 back bias voltage, positive high-impedance state HRS+Become low resistance state LRS.Therefore, it can define in (Vth4, Vth1) stablize
Negative high-impedance state HRS-For the one state of device, and in (Vth3, Vth2) stablize positive high-impedance state HRS in+For " 0 " state of device.
" 0 " and one state can be by applying (a Vth1, Vth2) bias between identifies.By the current-voltage of the present embodiment
Performance plot is also known, as one (V of applicationth1, Vth2) when bias between, " 0 " represents at this time positive high-impedance state HRS+Still keep
High-impedance state, and the negative high-impedance state HRS that " 1 " represents-Then become low resistance state LRS, i.e. the reading of " 1 " has destructiveness, needs to apply
One is no more than Vth4 back bias voltage makes it be restored to the negative high-impedance state HRS of " 1 " representative-." 0 " of the complementary type resistance-variable storing device
It is stored all in the form of high-impedance state with one state, the electric current string in right-angled intersection array can be eliminated without additional selection element
Problem is disturbed, the exploitation of ultra high density, low energy consumption memory is conducive to.
Embodiment 3
A kind of complementary type resistance-variable storing device based on GeTe of the present embodiment, the memory includes bottom conductive electrode；
GeTe thin film dielectric layers set on bottom conductive electrode upper surface；Top layer conductive electricity set on GeTe thin film dielectric layers upper surface
Pole.
The bottom conductive electrode is made of TiN, thickness 200nm, and shape is rectangle, and the length of side is 0.8 μm.
The GeTe thin film dielectrics layer thickness is 20nm, and shape is rectangle, and the length of side is 0.8 μm.
The top layer conductive electrode is made of Pt, thickness 250nm, shape rectangle, and the length of side is 0.8 μm.
The preparation method of complementary type resistance-variable storing device based on GeTe described above, includes the following steps：
The bottom conductive electrode is prepared in substrate；GeTe thin film dielectric layers are prepared in bottom conductive electrode upper surface；
Top layer conductive electrode is plated in GeTe thin film dielectric layers upper surface.
The method that the above method specifically uses magnetron sputtering prepares GeTe thin film dielectrics in the upper surfaces bottom conductive electrode TiN
Layer, sputtering target material are GeTe targets, and using radio-frequency sputtering, underlayer temperature 300K, reaction gas is argon gas, and control vacuum is indoor
Air pressure is 4Torr, and radio-frequency sputtering power is 120W.
The method that the above method specifically uses magnetron sputtering prepares Pt top layer conductive electricity in GeTe thin film dielectric layers upper surface
Pole, sputtering target material are Pt targets, and using d.c. sputtering, underlayer temperature 300K, reaction gas is argon gas, control the indoor gas of vacuum
Pressure is 4Torr, sputtering power 100W.
The I-E characteristic figure and Fig. 1 of the complementary type resistance-variable storing device of the present embodiment are also essentially identical, by the present embodiment
I-E characteristic figure it is found that the complementary type resistance-variable storing device storage characteristics in suitable voltage range (Vth3,
Vth1) there are two opposite polarity high-impedance state, HRS for tool+And HRS-Respectively represent two opposite polarity high resistants positively and negatively
State.Wherein, high-impedance state HRS is born-In (Vth4, Vth1) it is kept in bias range, when being applied more than Vth1 and be less than Vth2 positively biased
After pressure, high-impedance state HRS is born-Become low resistance state LRS.Positive high-impedance state HRS+In (Vth3, Vth2) it is kept in bias range, works as application
More than Vth4 and be less than VthAfter 3 back bias voltage, positive high-impedance state HRS+Become low resistance state LRS.Therefore, it can define in (Vth4, Vth1)
Stable negative high-impedance state HRS-For the one state of device, and in (Vth3, Vth2) stablize positive high-impedance state HRS in+For " 0 " of device
State." 0 " and one state can be by applying (a Vth1, Vth2) bias between identifies.By the electric current-of the present embodiment
Voltage characteristic figure is also known, as one (V of applicationth1, Vth2) when bias between, " 0 " represents at this time positive high-impedance state HRS+Still
Holding high-impedance state, and the negative high-impedance state HRS that " 1 " represents-Then become low resistance state LRS, i.e. the reading of " 1 " has destructiveness, needs
Apply one and is no more than Vth4 back bias voltage makes it be restored to the negative high-impedance state HRS of " 1 " representative-.The complementary type resistance-variable storing device
" 0 " and one state stored all in the form of high-impedance state, can eliminate the electricity in right-angled intersection array without additional selection element
Cross-interference issue is flowed, the exploitation of ultra high density, low energy consumption memory is conducive to.
Embodiment 4
A kind of complementary type resistance-variable storing device based on GeTe of the present embodiment, the reservoir includes bottom conductive electrode；If
GeTe thin film dielectric layers in bottom conductive electrode upper surface；Top layer conductive electrode set on GeTe thin film dielectric layers upper surface.
The bottom conductive electrode is made of TiN, thickness 200nm, and shape is rectangle, and the length of side is 1.0 μm.
The GeTe thin film dielectrics layer thickness is 20nm, and shape is rectangle, and the length of side is 1.0 μm.
The top layer conductive electrode is made of Pt, thickness 250nm, shape rectangle, and the length of side is 1.0 μm.
The preparation method of complementary type resistance-variable storing device based on GeTe described above, includes the following steps：
The bottom conductive electrode is prepared in substrate；GeTe thin film dielectric layers are prepared in bottom conductive electrode upper surface；
Top layer conductive electrode is plated in GeTe thin film dielectric layers upper surface.
The method that the above method specifically uses magnetron sputtering prepares GeTe thin film dielectrics in the upper surfaces bottom conductive electrode TiN
Layer, sputtering target material are GeTe targets, and using radio-frequency sputtering, underlayer temperature 300K, reaction gas is argon gas, and control vacuum is indoor
Air pressure is 4Torr, and radio-frequency sputtering power is 120W.
The method that the above method specifically uses magnetron sputtering prepares Pt top layer conductive electricity in GeTe thin film dielectric layers upper surface
Pole, sputtering target material are Pt targets, and using d.c. sputtering, underlayer temperature 300K, reaction gas is argon gas, control the indoor gas of vacuum
Pressure is 4Torr, sputtering power 100W.
The I-E characteristic figure and Fig. 1 of the complementary type resistance-variable storing device of the present embodiment are also essentially identical, by the present embodiment
I-E characteristic figure it is found that the complementary type resistance-variable storing device storage characteristics in suitable voltage range (Vth3,
Vth1) there are two opposite polarity high-impedance state, HRS for tool+And HRS-Respectively represent two opposite polarity high resistants positively and negatively
State.Wherein, high-impedance state HRS is born-In (Vth4, Vth1) it is kept in bias range, when being applied more than Vth1 and be less than Vth2 positively biased
After pressure, high-impedance state HRS is born-Become low resistance state LRS.Positive high-impedance state HRS+In (Vth3, Vth2) it is kept in bias range, works as application
More than Vth4 and be less than VthAfter 3 back bias voltage, positive high-impedance state HRS+Become low resistance state LRS.Therefore, it can define in (Vth4, Vth1)
Stable negative high-impedance state HRS-For the one state of device, and in (Vth3, Vth2) stablize positive high-impedance state HRS in+For " 0 " of device
State." 0 " and one state can be by applying (a Vth1, Vth2) bias between identifies.By the electric current-of the present embodiment
Voltage characteristic figure is also known, as one (V of applicationth1, Vth2) when bias between, " 0 " represents at this time positive high-impedance state HRS+Still
Holding high-impedance state, and the negative high-impedance state HRS that " 1 " represents-Then become low resistance state LRS, i.e. the reading of " 1 " has destructiveness, needs
Apply one and is no more than Vth4 back bias voltage makes it be restored to the negative high-impedance state HRS of " 1 " representative-.The complementary type resistance-variable storing device
" 0 " and one state stored all in the form of high-impedance state, can eliminate the electricity in right-angled intersection array without additional selection element
Cross-interference issue is flowed, the exploitation of ultra high density, low energy consumption memory is conducive to.
Embodiment 5
A kind of complementary type resistance-variable storing device based on GeTe of the present embodiment, the memory includes bottom conductive electrode；
GeTe thin film dielectric layers set on bottom conductive electrode upper surface；Top layer conductive electricity set on GeTe thin film dielectric layers upper surface
Pole.
The bottom conductive electrode is made of TiN, thickness 200nm, and shape is rectangle, and the length of side is 4.0 μm.
The GeTe thin film dielectrics layer thickness is 20nm, and shape is rectangle, and the length of side is 4.0 μm.
The top layer conductive electrode is made of Pt, thickness 250nm, shape rectangle, and the length of side is 4.0 μm.
The preparation method of complementary type resistance-variable storing device based on GeTe described above, includes the following steps：
The bottom conductive electrode is prepared in substrate；GeTe thin film dielectric layers are prepared in bottom conductive electrode upper surface；
Top layer conductive electrode is plated in GeTe thin film dielectric layers upper surface.
The method that the above method specifically uses magnetron sputtering prepares GeTe thin film dielectrics in the upper surfaces bottom conductive electrode TiN
Layer, sputtering target material are GeTe targets, and using radio-frequency sputtering, underlayer temperature 300K, reaction gas is argon gas, and control vacuum is indoor
Air pressure is 4Torr, and radio-frequency sputtering power is 120W.
The method that the above method specifically uses magnetron sputtering prepares Pt top layer conductive electricity in GeTe thin film dielectric layers upper surface
Pole, sputtering target material are Pt targets, and using d.c. sputtering, underlayer temperature 300K, reaction gas is argon gas, control the indoor gas of vacuum
Pressure is 4Torr, sputtering power 100W.
The I-E characteristic figure and Fig. 1 of the complementary type resistance-variable storing device of the present embodiment are also essentially identical, by the present embodiment
I-E characteristic figure it is found that the complementary type resistance-variable storing device storage characteristics in suitable voltage range (Vth3,
Vth1) there are two opposite polarity high-impedance state, HRS for tool+And HRS-Respectively represent two opposite polarity high resistants positively and negatively
State.Wherein, high-impedance state HRS is born-In (Vth4, Vth1) it is kept in bias range, when being applied more than Vth1 and be less than Vth2 positively biased
After pressure, high-impedance state HRS is born-Become low resistance state LRS.Positive high-impedance state HRS+In (Vth3, Vth2) it is kept in bias range, works as application
More than Vth4 and be less than VthAfter 3 back bias voltage, positive high-impedance state HRS+Become low resistance state LRS.Therefore, it can define in (Vth4, Vth1)
Stable negative high-impedance state HRS-For the one state of device, and in (Vth3, Vth2) stablize positive high-impedance state HRS in+For " 0 " of device
State." 0 " and one state can be by applying (a Vth1, Vth2) bias between identifies.By the electric current-of the present embodiment
Voltage characteristic figure is also known, as one (V of applicationth1, Vth2) when bias between, " 0 " represents at this time positive high-impedance state HRS+Still
Holding high-impedance state, and the negative high-impedance state HRS that " 1 " represents-Then become low resistance state LRS, i.e. the reading of " 1 " has destructiveness, needs
Apply one and is no more than Vth4 back bias voltage makes it be restored to the negative high-impedance state HRS of " 1 " representative-.The complementary type resistance-variable storing device
" 0 " and one state stored all in the form of high-impedance state, can eliminate the electricity in right-angled intersection array without additional selection element
Cross-interference issue is flowed, the exploitation of ultra high density, low energy consumption memory is conducive to.
Claims (10)
1. a kind of complementary type resistance-variable storing device based on GeTe, it is characterised in that：The memory includes bottom conductive electrode；If
GeTe thin film dielectric layers in bottom conductive electrode upper surface；Top layer conductive electrode set on GeTe thin film dielectric layers upper surface.
2. the complementary type resistance-variable storing device according to claim 1 based on GeTe, it is characterised in that：The conductive electricity of the bottom
Pole is made of FTO, ITO, ZTO, TaN or TiN.
3. the complementary type resistance-variable storing device according to claim 2 based on GeTe, it is characterised in that：The conductive electricity of the bottom
Pole thickness is 50~500nm, and shape is round or rectangle, and diameter or the length of side are 10nm~100 μm.
4. the complementary type resistance-variable storing device according to claim 1 based on GeTe, it is characterised in that：The GeTe films are situated between
Matter layer thickness is 5~200nm.
5. the complementary type resistance-variable storing device according to claim 4 based on GeTe, it is characterised in that：The GeTe films are situated between
Matter layer shape is round or rectangle, and diameter or the length of side are 10nm~100 μm.
6. the complementary type resistance-variable storing device according to claim 1 based on GeTe, it is characterised in that：The top layer conductive electricity
Pole is made of Pt, Au, Pd, Al, Cu or Ag.
7. the complementary type resistance-variable storing device according to claim 6 based on GeTe, it is characterised in that：The top layer conductive electricity
Pole thickness is 50~500nm, and shape is round or rectangle, and diameter or the length of side are 10nm~100 μm.
8. a kind of preparation method of complementary type resistance-variable storing device of claim 1~7 any one of them based on GeTe, feature
It is：It the described method comprises the following steps：
The bottom conductive electrode is prepared in substrate；GeTe thin film dielectric layers are prepared in bottom conductive electrode upper surface；
GeTe thin film dielectric layers upper surface plates top layer conductive electrode.
9. the preparation method of the complementary type resistance-variable storing device according to claim 8 based on GeTe, it is characterised in that：Using
The method of magnetron sputtering prepares GeTe thin film dielectric layers in the upper surfaces bottom conductive electrode FTO, ITO, ZTO, TaN or TiN, splashes
Material of shooting at the target is GeTe targets, and using radio-frequency sputtering, underlayer temperature 300K, reaction gas is argon gas, controls the indoor air pressure of vacuum
For 4Torr, radio-frequency sputtering power is 120W.
10. the preparation method of the complementary type resistance-variable storing device according to claim 8 based on GeTe, it is characterised in that：It adopts
Pt, Au, Pd, Al, Cu or Ag top layer conductive electrode are prepared in GeTe thin film dielectric layers upper surface with the method for magnetron sputtering, is splashed
Material of shooting at the target is Pt, Au, Pd, Al, Cu or Ag target, and using d.c. sputtering, underlayer temperature 300K, reaction gas is argon gas, control
The indoor air pressure of vacuum is 4Torr, sputtering power 100W.
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