CN108666410A - The manufacturing method of surface acoustic wave wafer-class encapsulation and its PCB used - Google Patents
The manufacturing method of surface acoustic wave wafer-class encapsulation and its PCB used Download PDFInfo
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- CN108666410A CN108666410A CN201710193121.6A CN201710193121A CN108666410A CN 108666410 A CN108666410 A CN 108666410A CN 201710193121 A CN201710193121 A CN 201710193121A CN 108666410 A CN108666410 A CN 108666410A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/88—Mounts; Supports; Enclosures; Casings
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/022—Processes for manufacturing precursors of printed circuits, i.e. copper-clad substrates
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
- H05K3/061—Etching masks
- H05K3/064—Photoresists
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
- H10N30/875—Further connection or lead arrangements, e.g. flexible wiring boards, terminal pins
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- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
A kind of surface acoustic wave wafer-class encapsulation is disclosed, including：Substrate；Form interdigital transducer (IDT) electrode on the substrate；Form on the substrate and be electrically connected to the connection electrode of the IDT electrode；Printed circuit board (PCB) has and is formed in the through-hole at position corresponding with the connection electrode, the hollow portion for accommodating the IDT electrode and the bottom for being partly attached to the substrate；And the connection terminal of the connection electrode is electrically connected to by the through-hole.
Description
Technical field
The present invention relates to surface acoustic wave devices more particularly to surface acoustic wave wafer-class encapsulation and manufacture to be used to form hollow portion
To accommodate the interdigital transducer in the surface acoustic wave wafer-class encapsulation (interdigital transducer, IDT) electrode
The method of printed circuit board (PCB).
Background technology
Surface acoustic wave is the sound wave propagated along the surface of elastic base plate.Sound wave is as piezoelectric effect as a result, from electricity
What signal generated.The electric field of sound wave can be concentrated near on the surface of the substrate, and can be set up directly on it is another on surface
The conduction electron interaction of semiconductor.Medium by its conduct acoustic waves is that have high mechanical-electric coupling efficiency and in a low voice wave energy
Measure the piezoelectric material of loss, and high mobility, best specific resistance and low direct current (DC) work(of semiconductor due to conducting electronics
Rate element and optimum efficiency is provided.With the electromechanical assembly generation using the interaction between surface acoustic wave and semiconductor conductivity electronics
Surface acoustic wave (surface acoustic wave, SAW) device is obtained for electronic circuit.
Since the wave energy of surface acoustic wave concentrates on the surface of solids propagating, so being easy to control signal, and can make
Device minimizes.Further, since such as LiNbO3、LiTaO3, quartz, PZT high-quality piezoelectric material appearance, interdigital changes
Energy device (IDT) has been installed on surface, easily and effectively to generate, detect and control surface acoustic wave.As a result, accelerating profit
The research and development of the various high function electronic devices of radiofrequency signal is handled with surface acoustic wave.
Surface acoustic wave device is configured as the input electrode and output electrode for the interdigital shape that both ends are had thin metal film
Installation on the surface of the media, inputs high frequency, is converted into surface acoustic wave, and detect the radio wave property of output electrode to return
Electric signal.As its example application, there are delay line device, amplifier, mode converter, beam deflector, optical switch etc..
Recently, the surface acoustic wave device as manufacture and when semiconductor device, with chip processing, cut one by one chip,
Then the existing method that encapsulates is different, using wafer-class encapsulation (wafer level package, WLP) manufacturing method
It is commonly used, in this manufacturing method, packaging technology and test are once carried out in wafer scale, then cut chip, to letter
Singly produce complete product.
It, can be in wafer scale by WLP, that is, in the state that each chip is not detached with chip, produce as complete
The encapsulation of product.In addition it is possible to use existing wafer fabrication equipment and technique, as they are used as the manufacture for being used for manufacturing encapsulation
Equipment is as manufacturing process.Since this WLP techniques are packaged technique in wafer scale, show with what is encapsulated by one single chip
There is method to compare, hundreds of or thousands of encapsulation can be produced by a packaging technology, thus greatly reduce manufacturing cost
And cost of investment.
In surface acoustic wave wafer-class encapsulation, since IDT electrode is arranged in the hollow portion formed by substrate, side wall and lid
In, and the mechanical oscillation of IDT electrode are used as filter to operate, it is therefore desirable to the hollow portion is protected completely.However,
In the technique for manufacturing the electronic device for including the surface acoustic wave device manufactured using WLP methods, especially grasped in transfer molding
In work, there is limitation in terms of tolerance high pressure enough.
In order to overcome this point, there is the case where forming side wall and lid using the hard material of such as substrate.However, manufacture
Cost is very high and low yield.
In order to overcome the limitation, United States Patent (USP) number of registration 8436514 (patent document 1) is disclosed to be added at the top of protection cap
Add conducting shell to bear the pressure as caused by transfer molding.Particularly, in patent document 1, it discloses above piezo-electric device
Conducting shell is widely formed, effectively to bear pressure, and the area of conducting shell is formed the top surface of piezo-electric device
50% or more of area.
However, the method for patent document 1 causes other limitations.When conducting shell is widely formed in above protection cap,
The warping phenomenon of the substrate warp of piezo-electric device occurs.When substrate be formed it is very thick to prevent warpage when, this and piezo-electric device
Thinning trend disagree.In addition, when carrying out WLP techniques on thick substrate, then when grinding base plate, due to the increase of technique,
Manufacturing cost increases and yield rate reduces.
Usually using monocrystal material such as LiTa2O3As substrate.However, external physical impact is easy to make this material breaks.
Therefore, it is necessary to be handled with care.Become larger with the warpage of substrate, many techniques is caused to limit.
For example, when forming the after-applied laminating technology or coating processes for being used to form insulating layer of conducting shell, need
Substrate is arranged on vacuum cup and makes substrate at level using vacuum.However, the substrate of above-mentioned warpage is easy in the technique
Middle rupture or insulating layer forming material are unevenly applied.In addition, in WLP manufacturing process, will manufactured with wafer scale
Multiple piezo-electric devices cut one by one during, substrate is easily broken.
Meanwhile Registered Korean Patent No. 0836652 discloses a kind of wafer-class encapsulation, have by with piezoelectric chip phase
Through-hole is formed in the lid chip that same material is formed and lid chip is engaged into the structure to piezoelectric chip.
However, since piezoelectric material price is very high, lead to rise in price.In addition, the piezoelectric material with hardness is not allowed
Easy processing, and when forming through-hole, damage or defective possibility are high.In addition, due to being engaged with each other by piezoelectric material
There are technical difficulties for aspect, therefore yield rate is low.
[existing technical literature]
[patent document]
Patent document 1：United States Patent (USP) number of registration 8436514
Patent document 2：Registered Korean Patent No. 0836652
Invention content
It is an aspect of the present invention to provide a kind of surface acoustic wave wafer-class encapsulations, can easily process through-hole, small-sized
Change and thinning, while using inexpensive material and with the pressure-resistant performance improved.
Another aspect of the present invention is to provide a kind of manufacture and is used to form hollow portion to accommodate surface acoustic wave wafer scale envelope
The method of the printed circuit board (PCB) of interdigital transducer (IDT) electrode of dress.
One aspect of the present invention provides a kind of surface acoustic wave wafer-class encapsulation comprising：Substrate；It is formed in the substrate
On IDT electrode；Form on the substrate and be electrically connected to the connection electrode of the IDT electrode；PCB has and is formed
It through-hole at position corresponding with the connection electrode, the hollow portion for accommodating the IDT electrode and is partly attached to
The bottom of the substrate；And the connection terminal of the connection electrode is electrically connected to by the through-hole.
The PCB may include the hollow forming portion around the through-hole, and the hollow forming portion is attached to the base
Plate, while there is step with against the part of the IDT electrode, to form the hollow portion.
The hollow forming portion may include the thin copper film being formed in around the through-hole and be formed on the thin copper film
Coating.
The PCB may further include enhancement layer, and the enhancement layer is at least partly set as against the IDT electrode,
For use as stiffener.
The enhancement layer may include the thin copper film being formed in below the PCB.
The enhancement layer may include the thin copper film being formed in below the PCB and the thin copper film being formed in the PCB.
The enhancement layer may include the thin copper film being formed in the PCB.
Another aspect of the present invention provides a kind of manufacture and is used to form hollow portion in receiving surface sound wave wafer-class encapsulation
IDT electrode PCB method.This method includes：(a) the PCB raw materials that both sides are all applied with thin copper film are prepared；(b) with institute
State formation through-hole at the corresponding position of connection electrode of surface acoustic wave wafer-class encapsulation；(c) it is retained in and exists including the through-hole
At the first part on the periphery at top surface and bottom surface and at least partly against at the second part of the IDT electrode
The thin copper film, and remove the other parts of the thin copper film；And (d) the thin copper film at the first part
Coating is formed on the inner peripheral surface of the upper and described through-hole.
Operating (c) may include：Photoresist is applied to the first part and the second part；Pass through etching
Technique removes the other parts other than part corresponding with the first part and the second part of the thin copper film；
And the removal photoresist.
Operating (d) may include：Thin copper film plating resist agent being applied at the second part；Pass through electroplating technology
On the thin copper film at the first part and form coating on the inner peripheral surface of the through-hole；And removal is described anti-
Plate agent.
Another aspect of the present invention provides a kind of manufacture and is used to form hollow portion in receiving surface sound wave wafer-class encapsulation
IDT electrode PCB method.This method includes：(a) manufacture is all applied with thin copper film and portion inside it in its both sides
PCB inserted with thin copper film in point；(b) it is formed at position corresponding with the connection electrode of surface acoustic wave wafer-class encapsulation
Through-hole；(c) first part and at least portion on the periphery at top surface and bottom surface including the through-hole are retained in
Divide against the thin copper film at the second part of the IDT electrode, and removes the other parts of the thin copper layer；And
(d) on the thin copper film at the first part and coating is formed on the inner peripheral surface of the through-hole.
Operating (a) may include：(a1) prepare one side be applied with thin copper film the first PCB raw materials and its both sides all
It is applied with the 2nd PCB raw materials of thin copper film；(a2) retain described at the part on the side of the 2nd PCB raw materials
Thin copper film, and remove the other parts of thin copper film described in the side of the 2nd PCB raw materials；And (a3) so that described
Another surface for not applying the thin copper film of first PCB raw materials has eliminated the thin copper film with the 2nd PCB raw materials
The mode of surface contact stack and pressurize the first PCB raw materials and the 2nd PCB raw materials.
Another aspect of the present invention provides a kind of manufacture and is used to form hollow portion in receiving surface sound wave wafer-class encapsulation
IDT electrode PCB method.This method includes：(a) manufacture is all applied with thin copper film and portion inside it in its both sides
PCB inserted with thin copper film in point；(b) it is formed at position corresponding with the connection electrode of surface acoustic wave wafer-class encapsulation
Through-hole；(c) it is retained in described thin at the first part on the periphery at top surface and bottom surface including the through-hole
Copper film, and the other parts of the thin copper film are removed, and (d) in the first part and on the inner peripheral surface of the through-hole
Form coating.
Operating (c) may include：Photoresist is applied to the first part；It is removed by etch process described thin
The other parts other than part corresponding with the first part of copper film；And the removal photoresist.
Description of the drawings
By reference to attached drawing detailed description of the present invention exemplary embodiment, above and other objects of the present invention, feature
It will become apparent to those skilled in the art with advantage, wherein：
Figure 1A and 1B is the view for the structure for showing surface acoustic wave wafer-class encapsulation according to a first embodiment of the present invention；
Fig. 2A and 2B shows the example for the vertical view that the A-A' along Figure 1A is intercepted；
Fig. 3 A and 3B show the example for the vertical view that the B-B' along Figure 1A is intercepted；
Fig. 4 shows the process of the PCB 30 of manufacture Figure 1A according to an embodiment of the invention；
Fig. 5 A and 5B are the views for the structure for showing surface acoustic wave wafer-class encapsulation according to a second embodiment of the present invention；
Fig. 6 shows the process of the PCB 30' of manufacture Fig. 5 A according to an embodiment of the invention；
Fig. 7 shows the process of the PCB 300' of manufacture Fig. 6 according to an embodiment of the invention；
Fig. 8 A and 8B are the views for the structure for showing surface acoustic wave wafer-class encapsulation according to a third embodiment of the present invention；With
And
Fig. 9 shows the process of the PCB 30 " of manufacture Fig. 8 according to an embodiment of the invention.
Specific implementation mode
Detailed description of the present invention exemplary embodiment below with reference to accompanying drawings.In the following description and the drawings, substantially
Upper identical component will be presented with like reference characters, and will omit its repeated description.In addition, in the implementation to the present invention
It is of the invention when being deemed likely to unnecessarily to obscure to detaileds description of features and parts well known in the art in the description of example
When essential, it will be omitted.
Surface acoustic wave wafer-class encapsulation according to an embodiment of the invention provides a kind of structure, which can use printing
Circuit board (PCB) is used as side wall and lid when forming hollow portion, to accommodate interdigital transducer (IDT) electrode.The PCB is at a low price
Grid material reduces manufacturing cost, is easy to various types of processing, such as processes through-hole, is conducive to miniaturization and thinning, Neng Gouti
For rigid structure to increase pressure-resistant performance.
Figure 1A and 1B shows the structure of surface acoustic wave wafer-class encapsulation according to a first embodiment of the present invention.Figure 1A shows base
Plate 10 and PCB 30 adheres to and is formed with the structure of connection terminal 40, and Figure 1B shows that substrate 10 and PCB 30 adheres to and do not have also
Have to form the structure of connection terminal 40.
With reference to figure 1, surface acoustic wave wafer-class encapsulation according to a first embodiment of the present invention includes：Substrate 10；It is formed in base
IDT electrode 20 on plate 10；Form on the substrate 10 and be electrically connected to the connection electrode 21 of IDT electrode 20；PCB 30, packet
It includes the through-hole 37 being formed at position corresponding with connection electrode 21, be formed hollow portion 50 and the bottom to accommodate IDT electrode 20
The part for being attached to substrate 10 on portion surface；And the connection terminal 40 of connection electrode 21 is electrically connected to by through-hole 37.
Substrate 10 causes piezoelectric effect and the component of support device, and can use piezoelectric substrate, for example, by
LiTa2O3、LiNbO3The piezoelectric substrate of equal formation.Substrate 10 can be formed very thin so that device miniaturization and thinning.Example
Such as, in an embodiment of the present invention, substrate 10 can have about 250 μm or smaller thickness.
IDT electrode 20 is the component being substantially included in surface acoustic wave device, and is formed on the substrate 10.Pass through
The mechanical oscillation of IDT electrode 20, the surface acoustic wave device is as work such as filters.
Connection electrode 21 is used as that IDT electrode 20 can be electrically connected to the medium of the outside of the surface acoustic wave device.For example,
Connection terminal 40 and IDT electrode 20 are electrically connected by connection electrode 21, and the signal inputted from external terminal passes through connection terminal 40
It is transmitted to IDT electrode 20 with connection electrode 21, and connection electrode 21 and connection terminal are passed through by the signal that IDT electrode 20 generates
40 are transmitted to external terminal.Meanwhile connection electrode 21 and connection terminal 40 can be integrated, and according to IDT electrode 20
Shape and arrangement, it is convenient to omit connection electrode 21, and IDT electrode 20 can be directly connected to connection terminal 40.In this feelings
Under condition, the contact portion between IDT electrode 20 and connection terminal 40 is considered connection electrode 21.As described above, according to
40 integrated structure of connection electrode 21 and connection terminal, since connection electrode 21 and connection terminal 40 can pass through single technique
It is formed, so compared with the structure that connection electrode 21 and connection terminal 40 are formed separately, it is possible to reduce the operation of technique, and can
To reduce manufacturing cost.
PCB 30 accommodates IDT electrode 20 using hollow space 50, and at the same time as connection electrode 21 to be electrically connected
It is connected to the covering substrate of connection terminal 40.
PCB 30 includes through-hole 37 at position corresponding with connection electrode 21, and connection terminal 40 passes through 37 electricity of through-hole
It is connected to connection electrode 21.As shown, connection terminal can be formed as fill through-hole 37 shape, can also be formed as along
The inner peripheral surface of through-hole 37 is electrically connected and is not filled with the shape of through-hole 37.Connection terminal 40 can be by Ti, Cu, Sn, Ni, Au or its conjunction
Gold is formed, and can be formed using electroplating technology.
In order to form the hollow portion 50 for accommodating IDT electrode 20, in the bottom surface of PCB 30, PCB 30 is included in through-hole
Hollow forming portion 35 and 36 around 37, hollow forming portion 35 and 36 be attached to substrate 10 and with against the portion of IDT electrode 20
Divide (that is, top of IDT electrode 20) that there is difference in height.
Specifically, hollow forming portion 35 and 36 includes being formed on the peripheral surface of through-hole 37 and outside through-hole 37
Thin copper film 32 and the coating 33 being formed on thin copper film 32, and by the way that coating 33 is attached to substrate 10 come shape with adhesive 45
At hollow portion 50.That is, be formed will than below the lower section PCB 30 for the thickness that coating 33 is added with thin copper film 32
Thickness thickness based on the enhancement layer 34 that PCB substrate 31 describes, and adhered to coating 33 and substrate 10 with shape using adhesive 45
At the hollow portion 50 that can accommodate IDT electrode 20.
In addition, PCB 30 may further include the enhancement layer 34 for being used for example as stiffener, with according to transfer molding more
Add pressure resistance.As shown, enhancement layer 34 is provided so that at least partly against IDT electrode 20.As shown, according to this implementation
Example, enhancement layer 34 can be formed by the thin copper film 34 being formed in the bottom surface of PCB 30.As alternate embodiment, enhancement layer
It can be formed by being formed in the thin copper film inside PCB 30, and may include forming thin copper film in the pcb 30 and being formed in
Thin copper film in the bottom surface of PCB 30.It will be described as other embodiment.
Such as embodiment is formed when enhancement layer 34 is formed by the thin copper film 34 being formed in the bottom surface of PCB 30
The thin copper film 32 of hollow forming portion 35 and 36 and the thin copper film 34 for forming enhancement layer can be during manufacturing 30 PCB simultaneously
It is formed, and can be carried out by the Patternized technique of traditional PCB manufacturing process.Further, since can be by once scheming
The figure of inductor or capacitor of the case chemical industry skill while forming the pattern of thin copper film 32 and 34 needed for the operation of forming apparatus
Case, therefore process efficiency can be improved.
According to embodiment, the thin copper film 34 for forming enhancement layer and the thin copper film 32 for forming hollow forming portion 36 can be formed
To be separated from each other, or can be formed to be connected to each other.For example, in the characteristic due to required device, when grounded part is connected
In the case that performance can improve when connecing, thin copper film at grounded part around through-hole and the thin copper film 34 for forming enhancement layer can be by
Be formed as being connected with each other.
The coating 33 being formed on the thin copper film 32 of hollow forming portion 35 and 36 can also be manufactured by common PCB
The electroplating operations of technique are formed.Here, in order to form step, formed enhancement layer thin copper film 34 can be applied in plating resist agent with
It is not plated.However, as alternate examples, when forming the thin copper film for enhancement layer in the pcb, plating resist need not be used
Agent.
Even if the thin copper film 34 as formed enhancement layer in embodiment is formed in the portion of the IDT electrode 20 against 30 lower sections PCB
Exist respectively, but since it is formed, thin copper film 34 higher than the hollow forming portion 35 and 36 formed by thin copper film 32 and coating 33
It can not also be contacted with IDT electrode 20, and hollow forming portion 35 and 36 can be attached to substrate 10 by adhesive 45.
Furthermore, it is possible to determine the height of enhancement layer 34 and hollow molding portion 35 and 36 according to required pressure.For example, working as
When the pressure of transfer molding is 700psi, the thickness of enhancement layer 34 can be 3 μm or more, and the thickness of hollow forming portion 35 and 36
Degree can be 7 μm or more.By adjusting the thickness of thin copper film and coating during PCB manufacturing process, it can easily realize and add
The adjusting of the thickness of strong layer 34 and the thickness of hollow forming portion 35 and 36.Required pressure is higher, and the thickness of enhancement layer 34 can be with shape
Cheng get Yue is thick.Enhancement layer 34 can be by the top surface and bottom surface of PCB, top surface and inside, inside and bottom table
Face or variously-shaped multiple layers of formation in top surface, bottom surface and inside.
Fig. 2A and 2B shows the example for the vertical view that the A-A' along Figure 1A is intercepted.Above PCB 30, around through-hole 37
The shape of thin copper film 32 and coating 33 can be circle as shown in Figure 2 A, can be quadrangle as shown in Figure 2 B, can also
It is one kind in various other shapes.Above PCB 30, the shape of connection terminal 40 can be with thin copper film 32 and coating 33
Shape is identical.
Fig. 3 A and 3B show the example for the vertical view that the B-B' along Figure 1A is intercepted.Below PCB 30, hollow forming portion 35
The outer hollow forming portion 36 being segmented into 36 outside hollow forming portion 35 in through-hole 37 and inside hollow forming portion 35.
What interior hollow forming portion 35 and outer hollow forming portion 36 can be electrically separated.Due to interior hollow forming portion 35 and outer hollow forming portion
36 are formed by thin copper film 32 and coating 33, so they can be formed simultaneously during manufacturing 30 PCB.Outer hollow shape
Can be electrically separated with interior hollow forming portion 35 at portion 36 and it be formed in the most external of device, and attached with interior hollow forming portion 35
Substrate 10.
As shown in Figure 3A, enhancement layer 34 can be formed to detach with hollow forming portion 35 and 36.Unlike this, such as Fig. 3 B
Shown, enhancement layer 34 can be formed to be electrically connected to some of interior hollow forming portion 35.That is, in figure 3b, surrounding
The thin copper film of through-hole at grounded part is electrically connected by enhancement layer 34, to improve performance as described above.
Fig. 4 shows the process of the PCB 30 of manufacture Figure 1A according to an embodiment of the invention.
First, it prepares and is all applied with the PCB raw materials 300 (a) of thin copper film 302 and 303 in the both sides of PCB 301.
Then, through-hole 304 is formed at position corresponding with the necessary connection electrode 21 of surface acoustic wave wafer-class encapsulation
(b).Through-hole 304 for example can be processed to be formed by using laser drilling, and can carry out desmearing after drilling
Processing.
Then, in the thin copper film on the periphery of the through-hole 304 of 300 following above and of PCB raw materials including being formed with through-hole 304
First part A at and the part below PCB raw materials 300 against the thin copper at the second part B of the thin copper film of IDT electrode 20
Membrane part is retained, and the other parts of thin copper film are removed (c).Specifically, by the way that photoresist 305 to be applied to
First part A and second part B (c1) removes the other parts except first part A and second part B by etch process
Thin copper film (c2) then removes photoresist 305 (c3) to be formed at the thin copper film 320 at first part A and second part B
Thin copper film 340.
Then, in order to form step between first part A and second part B, on the thin copper film at first part A and
Coating (d) is formed on the inner peripheral surface of through-hole 304.Specifically, the thin copper film 340 plating resist agent 341 being applied at second part B
(d1), coating 330 is formed on the thin copper film 320 at first part A and on the inner peripheral surface of through-hole 304 by electroplating technology
(d2), plating resist agent 341 (d3) is then removed.
With reference to (d3) of Fig. 4,30 PCB shown in Fig. 1 can be formed by the technique included (a) to (d).
Fig. 5 A and 5B are the views for the structure for showing surface acoustic wave wafer-class encapsulation according to a second embodiment of the present invention.Figure
5A shows that substrate 10 and PCB 30' are attached to each other and are formed with the structure of connection terminal 40, and Fig. 5 B show substrate 10 and PCB
30' is attached to each other and forms the structure of connection terminal 40 not yet.
As the difference between second embodiment and first embodiment, in the first embodiment, by being formed under PCB 30
The thin copper film 34 of side forms enhancement layer, and in a second embodiment, other than thin copper film 34, also provides and be formed in PCB 30'
In thin copper film 39 be used as enhancement layer.Due in addition to the above described differences other structures and function it is identical as the embodiment of Fig. 1,
So repetitive description will be omitted.
Due to increasing the thin copper film 39 being formed in PCB 30' in a second embodiment, with first embodiment phase
Than resistance to pressure further increases.The thin copper film 39 being formed in PCB 30' is formed, the thin copper being similar to below PCB 30'
Film 34, partly against IDT electrode 20.In addition, as shown, the thin copper film 39 in PCB 30' can be formed than PCB 30'
The thin copper film 34 of lower section is wider.
Fig. 6 shows the process of the PCB 30' of manufacture Fig. 5 A according to an embodiment of the invention.Implementation as Fig. 6
Difference between example and the embodiment of Fig. 4, in the operation of Fig. 4, preparation is all applied with thin copper film 302 to the both sides of PCB 301
With 303 PCB raw materials 300, and in the operation (a) of Fig. 6, preparation is not only applied with thin copper film 302 on the both sides of PCB 301
With 303, and insert in a part of PCB 301 the PCB 300' of thin copper film 390.Due in addition to the above described differences
Other structures and function are identical as the embodiment of Fig. 4.So repetitive description will be omitted.
Fig. 7 shows the process of the PCB 300' of manufacture Fig. 6 according to an embodiment of the invention.
First, it prepares and the first PCB raw materials 410 of thin copper film 411 is applied with to side and both sides are all applied with thin copper film
421 and 422 the 2nd PCB raw materials 420 (a1).
Next, retaining the part corresponding to thin copper film 39 of the thin copper film 421 on the side of the 2nd PCB raw materials 420
423, and remove other parts (a2).Can by application photoresist in common PCB manufacturing process, etch and go
The process is carried out except the operation of photoresist.
Next, by the other side for not applying thin copper film 411 of the first PCB raw materials 410 and the 2nd PCB raw materials 420
The surface contact for eliminating thin copper film, with stack and pressurize the first PCB raw materials 410 and the 2nd PCB raw materials 420 (a3).
Pass through aforesaid operations, it is possible to produce the PCB 300' as shown in Fig. 6 (a).
Fig. 8 A to 8B are the views for the structure for showing surface acoustic wave wafer-class encapsulation according to a third embodiment of the present invention.Figure
8A shows that substrate 10 and PCB 30 " are attached to each other and are formed with the structure of connection terminal 40, and Fig. 8 B show substrate 10 and PCB
30 " are attached to each other and are formed not yet the structure of connection terminal 40.
As the difference between 3rd embodiment and the first and second embodiments, in the first embodiment, formation is only provided
Thin copper film 34 below PCB 30 provides the thin copper film being formed in below PCB 30' in a second embodiment as enhancement layer
34 are used as enhancement layer with the thin copper film 39 being formed in PCB 30', in the third embodiment, only provide and are formed in PCB 30'
Thin copper film 39 be used as enhancement layer.Due in addition to the above described differences other structures and function and the first and second embodiments phase
Together, therefore repetitive description will be omitted.
Fig. 9 shows the process of the PCB 30 " of manufacture Fig. 8 A according to an embodiment of the invention.
First, it such as Fig. 6, prepares and thin copper film 302 and 303 but also PCB's 301 not only is applied with to the both sides of PCB 301
PCB 300'(a inserted with thin copper film 390 in a part).
Then, through-hole 304 is formed at position corresponding with the required connection electrode 21 of surface acoustic wave wafer-class encapsulation
(b)。
Next, retain the periphery for the through-hole 304 for including the PCB 300' following above and for being formed with through-hole 304
Thin copper film at first part A, and remove the other parts (c) of thin copper film.Specifically, by by photoresist 305
It is applied to first part A (c1), the other parts (c2) of the thin copper film except first part A are removed by etch process, then
Photoresist 305 (c3) is removed to form the thin copper film 320 at first part A.
Then, plating is formed on the thin copper film 320 at first part A and on the inner peripheral surface of through-hole 304 by electroplating technology
330 (d) of layer.
According to an embodiment of the invention, hardness is provided with allow PCB and against PCB IDT electrode thin copper film it is high pressure resistant,
And it is formed in the thin copper film formed around the through-hole of PCB and coating bilayer forms hollow portion.
Therefore, surface acoustic wave wafer-class encapsulation according to an embodiment of the invention can meet pressure-resistant performance, and processing is simple,
Manufacturing cost is low, and is easy to form hollow portion, has less manufacturing process to provide the reliability of high yield and raising.
In addition, the thin copper film being formed on PCB may be used as enhancement layer or form hollow portion, such as inductance may be used as
The impedance circuit of device etc., and may be used as the device for electrically connecting to ground.
According to an embodiment of the invention, a kind of surface acoustic wave wafer-class encapsulation is provided, through-hole can be easily processed, it is small
Type and thinning, while using inexpensive material and with the pressure-resistant performance improved.
Hollow portion is used to form with the IDT electrode in receiving surface sound wave wafer-class encapsulation further, it is also possible to manufacture
PCB。
Although exemplary embodiment of the present invention is described above, those skilled in the art should manage
Solution can modify to the present invention in the case where not departing from the inner characteristic of the present invention.Therefore, the disclosed embodiments
It should be considered being not limiting viewpoint, but descriptive viewpoint.It should be appreciated that the scope of the present invention is by claims
Rather than limited by foregoing description, and include all differences in its equivalency range.
Claims (17)
1. a kind of surface acoustic wave wafer-class encapsulation, which is characterized in that including：
Substrate；
Form interdigital transducer IDT electrode on the substrate；
Form on the substrate and be electrically connected to the connection electrode of the interdigital transducer electrode；
Printing board PCB has the through-hole being formed at position corresponding with the connection electrode, for accommodating the fork
The hollow portion of finger formula transducer electrode and the bottom for being partly attached to the substrate；And
The connection terminal of the connection electrode is electrically connected to by the through-hole.
2. surface acoustic wave wafer-class encapsulation according to claim 1, wherein during the PCB is included in around the through-hole
Empty forming portion, the hollow forming portion is attached to the substrate, while having step with against the part of the IDT electrode, with
Form the hollow portion.
3. surface acoustic wave wafer-class encapsulation according to claim 2, wherein the hollow forming portion is described including being formed in
Thin copper film around through-hole and the coating being formed on the thin copper film.
4. surface acoustic wave wafer-class encapsulation according to claim 2, wherein the PCB further comprises enhancement layer, it is described
Enhancement layer is at least partly set as against the IDT electrode, for use as stiffener.
5. surface acoustic wave wafer-class encapsulation according to claim 4, wherein the enhancement layer includes being formed under the PCB
The thin copper film of side.
6. surface acoustic wave wafer-class encapsulation according to claim 4, wherein the enhancement layer includes being formed under the PCB
The thin copper film of side and the thin copper film being formed in the PCB.
7. surface acoustic wave wafer-class encapsulation according to claim 4, wherein the enhancement layer includes being formed in the PCB
Thin copper film.
8. a kind of manufacture is used to form hollow portion in the method for the PCB of the IDT electrode in receiving surface sound wave wafer-class encapsulation,
It is characterized in that, this method includes：
(a) the PCB raw materials that both sides are all applied with thin copper film are prepared；
(b) through-hole is formed at position corresponding with the connection electrode of surface acoustic wave wafer-class encapsulation；
(c) it is retained at the first part on the periphery at top surface and bottom surface including the through-hole and at least portion
Divide against the thin copper film at the second part of the IDT electrode, and removes the other parts of the thin copper film；And
(d) coating is formed on the thin copper film at the first part and on the inner peripheral surface of the through-hole.
9. according to the method described in claim 8, wherein operation (c) includes：
Photoresist is applied to the first part and the second part；
By etch process remove the thin copper film in addition to part corresponding with the first part and the second part it
Outer other parts；And
Remove the photoresist.
10. according to the method described in claim 8, wherein operation (d) includes：
Thin copper film plating resist agent being applied at the second part；
Plating is formed on the thin copper film at the first part and on the inner peripheral surface of the through-hole by electroplating technology
Layer；And
Remove the plating resist agent.
11. a kind of manufacture is used to form hollow portion in the method for the PCB of the IDT electrode in receiving surface sound wave wafer-class encapsulation,
It is characterized in that, this method includes：
(a) manufacture is all applied with the PCB inserted with thin copper film in thin copper film and a part inside it in its both sides；
(b) through-hole is formed at position corresponding with the connection electrode of surface acoustic wave wafer-class encapsulation；
(c) it is retained in the first part and at least partly on the periphery at top surface and bottom surface including the through-hole
The thin copper film against at the second part of the IDT electrode, and remove the other parts of the thin copper layer；And
(d) on the thin copper film at the first part and coating is formed on the inner peripheral surface of the through-hole.
12. according to the method for claim 11, wherein operation (c) includes：
Photoresist is applied to the first part and the second part；
By etch process remove the thin copper film in addition to part corresponding with the first part and the second part it
Outer other parts；And
Remove the photoresist.
13. according to the method for claim 11, wherein operation (d) includes：
Thin copper film plating resist agent being applied at the second part；
On the thin copper film of the first part and coating is formed by electroplating technology on the inner peripheral surface of the through-hole；
And
Remove the plating resist agent.
14. according to the method for claim 11, wherein operation (a) includes：
(a1) it prepares and is applied with the first PCB raw materials of thin copper film in one side and is all applied with the second of thin copper film in its both sides
PCB raw materials；
(a2) retain the thin copper film at the part on the side of the 2nd PCB raw materials, and remove described the
The other parts of the thin copper film of the side of two PCB raw materials；And
(a3) so that another surface for not applying the thin copper film of the first PCB raw materials and the 2nd PCB raw materials
The mode for eliminating the surface contact of the thin copper film stacks and pressurizes the first PCB raw materials and the 2nd PCB raw materials.
15. a kind of manufacture is used to form hollow portion in the method for the PCB of the IDT electrode in receiving surface sound wave wafer-class encapsulation,
It is characterized in that, this method includes：
(a) manufacture is all applied with the PCB inserted with thin copper film in thin copper film and a part inside it in its both sides；
(b) through-hole is formed at position corresponding with the connection electrode of surface acoustic wave wafer-class encapsulation；
(c) the thin copper being retained at the first part on the periphery at top surface and bottom surface including the through-hole
Film, and the other parts of the thin copper film are removed, and
(d) in the first part and coating is formed on the inner peripheral surface of the through-hole.
16. according to the method for claim 15, wherein operation (c) includes：
Photoresist is applied to the first part；
The other parts other than part corresponding with the first part of the thin copper film are removed by etch process；With
And
Remove the photoresist.
17. according to the method for claim 15, wherein operation (a) includes：
(a1) it prepares and is applied with the first PCB raw materials of thin copper film in one side and is all applied with the second of thin copper film in its both sides
PCB raw materials；
(a2) retain the thin copper film at the part on the side of the 2nd PCB raw materials, and remove described the
The other parts of the thin copper film of the side of two PCB raw materials；And
(a3) so that another surface for not applying the thin copper film of the first PCB raw materials and the 2nd PCB raw materials
The mode for eliminating the surface contact of the thin copper film stacks and pressurizes the first PCB raw materials and the 2nd PCB raw materials.
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| CN201710193121.6A CN108666410A (en) | 2017-03-28 | 2017-03-28 | The manufacturing method of surface acoustic wave wafer-class encapsulation and its PCB used |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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