CN108660508A - 一种利用分子束外延设备生长大尺度砷化镉薄膜的方法 - Google Patents

一种利用分子束外延设备生长大尺度砷化镉薄膜的方法 Download PDF

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CN108660508A
CN108660508A CN201810377140.9A CN201810377140A CN108660508A CN 108660508 A CN108660508 A CN 108660508A CN 201810377140 A CN201810377140 A CN 201810377140A CN 108660508 A CN108660508 A CN 108660508A
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cadmium arsenide
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修发贤
凌霁玮
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Abstract

本发明属于薄膜制备技术领域，具体一种利用分子束外延设备生长大尺寸砷化镉薄膜的方法。本发明方法，利用云母作为衬底，首先生长碲化镉作为缓冲层，利用砷化镉非晶块体材作为热蒸发源，以较低温度生长砷化镉低温缓冲层,随后在较高温度生长砷化镉薄膜至所需厚度。本发明与现有技术相比，使用经济的云母作为衬底，衬底处理工艺简单，采用非晶砷化镉蒸发源对设备要求低，工艺简单可获得晶圆级单晶薄膜，样品尺寸可达两英寸；薄膜单晶质量好，迁移率高。薄膜单晶质量好，迁移率高。

Description

一种利用分子束外延设备生长大尺度砷化镉薄膜的方法
技术领域
本发明属于薄膜制备技术领域，具体是涉及分子束外延生长砷化镉薄膜的方法。
背景技术
砷化镉是一种新型拓扑狄拉克材料，其相关拓扑理论获得2016年诺贝尔物理学奖。其能带结构具有无能隙、电子有效质量为零的线性色散关系，具有新的光、电、磁等特性。与传统半导体相比，砷化镉具有强自旋耦合，量子特性、超高迁移率及宽光谱吸收特性，因而在自旋电子、量子信息和光电探测等领域有重大应用前景。
通常生长砷化镉薄膜，可采用热蒸发的方式，在石英或氯化钠衬底上形成薄膜，所得薄膜为非晶；用分子束外延生长砷化镉单晶薄膜，采用碲化镉作为衬底，尺寸小，应用发展受限；采用砷化镓或碲化镓衬底，价格昂贵，衬底预处理工艺复杂；在大尺寸衬底上直接以较高温度生长砷化镉薄膜，薄膜难以在衬底上均匀生长；采用分别蒸发镉、砷源，调节束流比以获得符合化学计量比的砷化镉薄膜的方法中，需要高温裂解砷源，对设备要求高，工艺难度大。
发明内容
为了克服上述技术难题，本发明的目的在于提供一种设备要求低、工艺简单的生长大尺寸高质量砷化镉薄膜的方法。
本发明提供的生长大尺寸高质量砷化镉薄膜的方法，采用分子束外延设备，具体步骤为：
（1）采用云母作为衬底，对衬底采用机械剥离方式处理，以得到平整清洁的解理面；
（2）采用分子束外延技术，在衬底上生长碲化镉作薄膜作为缓冲层；生长碲化镉缓冲层以解决晶格失配问题；
（3）采用分子束外延技术，在碲化镉上生长砷化镉薄膜，分两步进行：首先以较低温度110-120℃生长温度生长4-10纳米砷化镉薄膜，使得砷化镉在缓冲层上大面积成核外延，随后，提高生长温度至150-170℃生长所需厚度的砷化镉单晶薄膜。
本发明可实现晶圆级高质量单晶砷化镉薄膜的可控生长。
本发明中，步骤（2）中，生长碲化镉薄膜时，衬底温度为180-200℃，碲化镉薄膜厚度为10-20纳米。
本发明中，生长砷化镉薄膜时，以非晶砷化镉块材作为蒸发源。
本发明中，作为衬底的云母大小为1-2英寸，优选为2英寸。相应的砷化镉薄膜大小可达2英寸。
与现有技术相比，本发明的显著优点为，采用云母作为衬底，衬底预处理方式简单，价格较为经济；采用非晶砷化镉蒸发源制备高质量薄膜，对设备要求低，工艺简单，可获得晶圆级单晶薄膜；薄膜单晶质量好，迁移率高。
附图说明
图1为云母上的生长的砷化镉薄膜。
图2为砷化镉薄膜高能电子束衍射图。表明薄膜为平整的高质量单晶。
图3为云母上砷化镉薄膜的X射线衍射图。其中，虚线为砷化镉薄膜（112）方向衍射峰位，其余衍射峰来自云母衬底。
图4为砷化镉薄膜载流子浓度和迁移率。
具体实施方式
以两英寸云母作为衬底，衬底处理方式为机械剥离，得到平整清洁的解理面；以衬底温度180-200℃生长10-20纳米碲化镉作为缓冲层以解决晶格失配问题，随后以非晶砷化镉块材作为热蒸发源，在碲化镉上以衬底温度110-120℃生长5纳米砷化镉薄膜作为低温缓冲层，使砷化镉薄膜在较低温度下大面积成核外延;随后提高生长温度至150-170℃，继续生长砷化镉薄膜至所需厚度，实现晶圆级高质量单晶砷化镉薄膜的可控生长。
图1为云母上的生长的砷化镉薄膜。
图2为砷化镉薄膜高能电子束衍射图。表明薄膜为平整的高质量单晶。
图4为砷化镉薄膜载流子浓度和迁移率。其中，采用Quantum Design 公司生产的综合物性测试系统（EC-II）在2-300K，±9T磁场条件下通过测量霍尔信号获得的载流子浓度和迁移率数据，薄膜样品在低温迁移率超过10000cm2V-1s-1 ，室温迁移率大于9000cm2V- 1s-1,载流子浓度为1011cm-2量级。
以上对本发明及其实施方式进行了描述，该描述没有限制性。如果本领域的普通技术人员受其启示，在不脱离本发明创造宗旨的情况下，不经创造性的设计出与该技术方案相似的实施例，均应属于本发明的保护范围。

Claims (4)

1.一种利用分子束外延设备生长大尺度砷化镉薄膜的方法，其特征在于，具体步骤为：
（1）采用云母作为衬底，对衬底采用机械剥离方式处理，以得到平整清洁的解理面；
（2）采用分子束外延技术，在衬底上生长碲化镉作薄膜作为缓冲层；生长碲化镉缓冲层以解决晶格失配问题；
（3）采用分子束外延技术，在碲化镉上生长砷化镉薄膜，分两步进行：首先以较低温度110-120℃生长温度生长4-10纳米砷化镉薄膜，使得砷化镉在缓冲层上大面积成核外延，随后，提高生长温度至150-170℃生长所需厚度的砷化镉单晶薄膜。
2.根据要求权利1所述的方法，其特征在于，步骤（2）中，生长碲化镉薄膜时，衬底温度为180-200℃，碲化镉薄膜厚度为10-20纳米。
3.根据要求权利1所述的方法，其特征在于，生长砷化镉薄膜时，以非晶砷化镉块材作为蒸发源。
4.根据要求权利1所述的方法，其特征在于，作为衬底的云母大小为1-2英寸。
CN201810377140.9A 2018-04-25 2018-04-25 一种利用分子束外延设备生长大尺度砷化镉薄膜的方法 Pending CN108660508A (zh)

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CN111139455A (zh) * 2019-12-18 2020-05-12 复旦大学 一种高质量砷化镉薄膜的制备方法
CN111403294A (zh) * 2020-03-06 2020-07-10 复旦大学 一种砷化镉同质pn结薄膜及其制备方法
CN112160027A (zh) * 2020-09-30 2021-01-01 中国科学院半导体研究所 一种铁磁性砷化镉单晶薄膜的制备方法

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CN111139455A (zh) * 2019-12-18 2020-05-12 复旦大学 一种高质量砷化镉薄膜的制备方法
CN111139455B (zh) * 2019-12-18 2021-09-28 复旦大学 一种高质量砷化镉薄膜的制备方法
CN111403294A (zh) * 2020-03-06 2020-07-10 复旦大学 一种砷化镉同质pn结薄膜及其制备方法
CN111403294B (zh) * 2020-03-06 2022-12-16 复旦大学 一种砷化镉同质pn结薄膜及其制备方法
CN112160027A (zh) * 2020-09-30 2021-01-01 中国科学院半导体研究所 一种铁磁性砷化镉单晶薄膜的制备方法

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