CN108648997B - 共振隧穿二极管晶圆结构的制备方法 - Google Patents
共振隧穿二极管晶圆结构的制备方法 Download PDFInfo
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- CN108648997B CN108648997B CN201810488345.4A CN201810488345A CN108648997B CN 108648997 B CN108648997 B CN 108648997B CN 201810488345 A CN201810488345 A CN 201810488345A CN 108648997 B CN108648997 B CN 108648997B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 230000005641 tunneling Effects 0.000 title claims abstract description 20
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims abstract description 120
- 238000005530 etching Methods 0.000 claims abstract description 95
- 239000000463 material Substances 0.000 claims abstract description 68
- 230000004888 barrier function Effects 0.000 claims abstract description 25
- 229910052751 metal Inorganic materials 0.000 claims abstract description 25
- 239000002184 metal Substances 0.000 claims abstract description 25
- 238000000151 deposition Methods 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims description 20
- 239000007788 liquid Substances 0.000 claims description 14
- 239000002253 acid Substances 0.000 claims description 9
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 3
- 239000010410 layer Substances 0.000 description 161
- 230000008569 process Effects 0.000 description 9
- 239000002346 layers by function Substances 0.000 description 6
- 238000001039 wet etching Methods 0.000 description 6
- 230000005855 radiation Effects 0.000 description 5
- 238000012545 processing Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/66196—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices with an active layer made of a group 13/15 material
- H01L29/66204—Diodes
- H01L29/66219—Diodes with a heterojunction, e.g. resonant tunneling diodes [RTD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Weting (AREA)
Abstract
Description
Claims (10)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810488345.4A CN108648997B (zh) | 2018-05-21 | 2018-05-21 | 共振隧穿二极管晶圆结构的制备方法 |
PCT/CN2018/113062 WO2019223243A1 (zh) | 2018-05-21 | 2018-10-31 | 共振隧穿二极管晶圆结构的制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN201810488345.4A CN108648997B (zh) | 2018-05-21 | 2018-05-21 | 共振隧穿二极管晶圆结构的制备方法 |
Publications (2)
Publication Number | Publication Date |
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CN108648997A CN108648997A (zh) | 2018-10-12 |
CN108648997B true CN108648997B (zh) | 2020-02-18 |
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CN201810488345.4A Active CN108648997B (zh) | 2018-05-21 | 2018-05-21 | 共振隧穿二极管晶圆结构的制备方法 |
Country Status (2)
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CN (1) | CN108648997B (zh) |
WO (1) | WO2019223243A1 (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN108648997B (zh) * | 2018-05-21 | 2020-02-18 | 雄安华讯方舟科技有限公司 | 共振隧穿二极管晶圆结构的制备方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1800890A (zh) * | 2006-01-19 | 2006-07-12 | 清华大学 | 一种光源集成的光子晶体带隙限制光波导 |
CN100495682C (zh) * | 2006-04-28 | 2009-06-03 | 中国科学院半导体研究所 | 采用干法刻蚀技术实现rtd与hemt单片集成的方法 |
CN103022218B (zh) * | 2012-12-26 | 2015-10-21 | 华中科技大学 | 一种InAs雪崩光电二极管及其制造方法 |
CN105720130B (zh) * | 2015-07-10 | 2018-01-30 | 中国科学院物理研究所 | 基于量子阱带间跃迁的光电探测器 |
CN106784123B (zh) * | 2016-11-23 | 2018-10-30 | 苏州苏纳光电有限公司 | 单行载流子光电探测器及其制作方法 |
CN108648997B (zh) * | 2018-05-21 | 2020-02-18 | 雄安华讯方舟科技有限公司 | 共振隧穿二极管晶圆结构的制备方法 |
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2018
- 2018-05-21 CN CN201810488345.4A patent/CN108648997B/zh active Active
- 2018-10-31 WO PCT/CN2018/113062 patent/WO2019223243A1/zh active Application Filing
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Publication number | Publication date |
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CN108648997A (zh) | 2018-10-12 |
WO2019223243A1 (zh) | 2019-11-28 |
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Effective date of registration: 20230217 Address after: 518000 404, building 37, chentian Industrial Zone, chentian community, Xixiang street, Bao'an District, Shenzhen City, Guangdong Province Patentee after: Shenzhen Huaxun ark Photoelectric Technology Co.,Ltd. Patentee after: SHENZHEN THZ SCIENCE AND TECHNOLOGY INNOVATION INSTITUTE Address before: 071700 room 1, building 2, North China electromechanical City, west of Rongli Road, Rongcheng County, Baoding City, Hebei Province Patentee before: XIONGAN CHINA COMMUNICATION TECHNOLOGY Co.,Ltd. Patentee before: SHENZHEN THZ SCIENCE AND TECHNOLOGY INNOVATION INSTITUTE |
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Effective date of registration: 20240719 Address after: Room 430, Building 37, Chentian Industrial Zone, Baotian 1st Road, Xixiang Street, Bao'an District, Shenzhen City, Guangdong Province 518100 Patentee after: Shenzhen Zhongtou Huaxun Terahertz Technology Co.,Ltd. Country or region after: China Address before: 518000 404, building 37, chentian Industrial Zone, chentian community, Xixiang street, Bao'an District, Shenzhen City, Guangdong Province Patentee before: Shenzhen Huaxun ark Photoelectric Technology Co.,Ltd. Country or region before: China Patentee before: SHENZHEN THZ SCIENCE AND TECHNOLOGY INNOVATION INSTITUTE |