CN108614941A - A kind of Board level packaging design optimization method for integrated QFN chips - Google Patents

A kind of Board level packaging design optimization method for integrated QFN chips Download PDF

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CN108614941A
CN108614941A CN201810428420.8A CN201810428420A CN108614941A CN 108614941 A CN108614941 A CN 108614941A CN 201810428420 A CN201810428420 A CN 201810428420A CN 108614941 A CN108614941 A CN 108614941A
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thermal stress
chip
pad
state equation
limit state
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CN108614941B (en
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黄志亮
李潇
周超伦
曾宪辰
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Hunan City University
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    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00Computer-aided design [CAD]
    • G06F30/30Circuit design
    • G06F30/39Circuit design at the physical level
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00Computer-aided design [CAD]
    • G06F30/20Design optimisation, verification or simulation
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2113/00Details relating to the application field
    • G06F2113/18Chip packaging

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Abstract

The present invention discloses a kind of Board level packaging design optimization method for integrated QFN chips, and step includes:It determines the parameter of integrated circuit board and establishes Thermal-mechanical Coupling simulation model;Build the performance function of pad thermal stress and chip warpage;Build the limit state equation of pad thermal stress and chip warpage;Build the approximate limit state equation of pad thermal stress and chip warpage;Check pad intensity and chip warpage;Terminate and export Board level packaging optimal design and fixed point Optimal error tolerance.The present invention to the Board level packaging for integrating QFN chips by building Thermal-mechanical Coupling simulation model, and limit state equation is established using interval analysis technology, gained Board level packaging optimization design scheme can not only meet the design requirement of thermal stress and warpage, while also have minimum processing cost and technology difficulty.Also, institute's extracting method of the present invention has good comprehensive performance in terms of efficiency and convergence.

Description

A kind of Board level packaging design optimization method for integrated QFN chips
Technical field
The invention belongs to IC package design fields, and in particular to a kind of Board level packaging for integrated QFN chips Design optimization method.
Background technology
Encapsulation not only can provide necessary electrical connection for integrated circuit and external system, also play machinery to integrated circuit Or the effect of environmental protection.With the rapid development of microelectric technique, the high encapsulation design of high level, which has become one and has much, chooses The work of war.Encapsulation generally may be defined to 4 ranks:Wafer scale, chip-scale, plate grade and system-level.Board level packaging refers to by core Piece and passive device are installed on printed circuit board jointly, to constitute the integrated circuit board with specific function.Board level packaging needs A stabilization, reliable working environment are provided for integrated chip;Therefore the encapsulation characteristic of chip itself sets Board level packaging Meter has vital influence.QFN is encapsulated as a kind of leaderless chip carrier(Also referred to as LCC), because its pin and pad it Between conductive path it is short and there is very low electrodynamic capacity and resistance, so it can provide remarkable electrical property.Currently, QFN chips It is widely used in mobile phone, tablet and other portable miniaturized electronics.
Since the substrate and institute integrated device encapsulating material coefficient of thermal expansion of integrated circuit board are different, in chip spontaneous heating and Local thermal stress and warpage will be generated under the comprehensive function of variation of ambient temperature, be lost with electrical property so as to cause encapsulation crackle It is very etc. of serious failure.When Board level packaging integrates QFN chips, this problem is then especially prominent.In most cases, QFN chips are electricity The core devices of subsystem, electrical property can directly determine systematic entirety energy.Also, QFN chip structures are very accurate, Even local micron order warpage all may cause its electrical property relatively large deviation occur.Traditional Board level packaging design relies primarily on work Journey experience, due to lacking necessary theoretical foundation, it is difficult to realize optimal design;When facing such challenge(As QFN chips are stuck up Bent tolerance is only micron order), conventional method is often difficult to meet design requirement.Relatively advanced design method is by numerical simulation Technology is organically combined with optimum theory, by building the Optimized model based on numerical simulation to realize that the optimization of Board level packaging is set Meter.The research of such method is still in the elementary step, and there are still a series of technological difficulties urgent need to resolve.First, structure is effectively excellent Change model not only to need to consider electrical property, hot property and the mechanical performance of integrated circuit board, also need to take into account manufacturing cost and Technology difficulty, this is for the great challenge of those skilled in the art.Secondly, object function or constraint are emulated based on time-consuming in Optimized model Model, design optimizing are nested with one another with about beam analysis, including the Optimized model solution of numerical simulation may face serious efficiency Problem and convergence obstacle.Therefore, for the integrated circuit board of integrated high-performance QFN chips, a kind of effective Board level packaging is proposed Design optimization method, for realizing that the rate electronics packages design of high performance-price ratio and high reliability has very important engineering meaning Justice.
Invention content
The purpose of the present invention is to provide a kind of Board level packaging design optimization method for integrated QFN chips, this method Based on circuit board Thermal-mechanical Coupling simulation model, pole is built one by one to not knowing QFN chips thermal stress under operating mode and Local warping Limit state equation simultaneously solves, to obtain the Board level packaging design scheme of tool optimal cost.The present invention passes through following technical proposals It realizes.
A kind of Board level packaging design optimization method for integrated QFN chips, this approach includes the following steps.
1)It determines the parameter of integrated circuit board and establishes Thermal-mechanical Coupling simulation model;
2)Build the performance function of pad thermal stress and chip warpage;
3)Build the limit state equation of pad thermal stress and chip warpage;
4)Build the approximate limit state equation of pad thermal stress and chip warpage;
5)Check pad intensity and chip warpage;
6)Terminate and export Board level packaging optimal design and fixed point Optimal error tolerance.
Further, the step 1)The parameter of middle integrated circuit board includes:The structure size of substrate and each device, plane The work of coordinate, elasticity modulus, Poisson's ratio, coefficient of thermal expansion, work heat consumption and fixed point plane coordinates, integrated circuit board Temperature range;The step 1)Middle Thermal-mechanical Coupling simulation model refers to:According to identified integrated circuit board parameter, establish integrated Circuit board Thermal-mechanical Coupling simulation model.
Further, the step 2)The performance function of middle pad thermal stress and chip warpage refers to:With fixed point normal direction Coordinate is independent variable, using QFN chip bonding pad peak value thermal stress and QFN chip interiors chip warpage as dependent variable, structure weldering respectively Disk thermal stress performance functionσ(X) and chip warpage performance functionδ(X);σIndicate pad peak value thermal stress;δIndicate chip warpage, Norma l deviation i.e. between chip angle point and center;XIt indicates fixed point normal direction coordinate vector, can be write asX =(X 1, X 2,…,X i ,…,X n )。
Further, the step 3)The limit state equation of middle pad thermal stress and chip warpage refers to:Consider exist Fixed point mismachining tolerance, build respectively QFN chip bonding pad peak heat limiting range of stress state equations maxσ(X)| e } -[σ] = 0 and QFN chip interior chip warpage limit state equations maxδ(X)| e } -[δ] = 0;Max indicates peak computational, max {σ(X)| ePad thermal stress peak value when indicating to have fixed point tolerance, maxδ(X)|eIndicate there is fixed point tolerance When chip warpage peak value;[σ] indicate bonding pad material allowable stress;[δ] indicate chip allowance for camber;eIndicate fixed point Error margin, for a certainX i Due to existinge,X i No longer it is a determination value and belongs to a section;The bound in the section is:X i C - eWithX i C + e,X i C For interval midpoint.
Further, the step 4)The approximate limit state equation of middle pad thermal stress refers to:To pad thermal stress Limit state equation existsXMidpoint vectorX C Place establishes linear approximation, builds the approximate limit state equation of pad thermal stress:
L σ (X) =σ(X C ) + e n i=1|∂σ(X C )/∂X i | -[σ] = 0
The optimal encapsulation design based on pad thermal stress can be obtained by solving above formula:(X σ , e σ )。
Further, the step 4)The approximate limit state equation of middle chip warpage refers to:To the limit of chip warpage State equation existsXMidpoint vectorX C Place establishes linear approximation, builds the approximate limit state equation of chip warpage:
L δ (X) = δ(X C ) + e n i=1|∂δ(X C )/∂X i | -[δ] = 0
The optimal encapsulation design based on chip warpage can be obtained by solving above formula:(X δ , e δ )。
Further, the step 5)Middle check pad intensity refers to:Will (X σ , e σ ) it is updated to chip warpage approximation pole The left side of limit state equation, 0 such as less than or equal to of resulting value (X σ , e σ ) it is feasible solution, it is otherwise trivial solution;The step 5)Lieutenant colonel's nuclear crystalline film warpage refers to:Will (X δ , e δ ) it is updated to the left side of pad thermal stress approximate limit state equation, resulting value is such as Less than or equal to 0 (X δ , e δ ) it is feasible solution, it is otherwise trivial solution;
Further, the step 6)Middle Board level packaging optimal design and fixed point Optimal error tolerance refer to:The step 5) Obtained feasible solution, can be write as (X *, e *);X *Indicate Board level packaging optimal design,e *Indicate fixed point Optimal error tolerance.
Compared with prior art, the present invention having the characteristics that:
1)Pass through and builds limit state equation, it is contemplated that there are the QFN chips part thermal stress and chip warpage when mismachining tolerance, Thus obtained encapsulation design scheme can have good engineering practicability.
2)By maximizing error margin so that gained Board level packaging design scheme can not only meet thermal stress and warpage Design requirement, while also have minimum processing cost and technology difficulty;
3)It solves limit state equation and faces double-layer nested optimization, outer layer is to design variable optimizing, and internal layer is error burst point Analysis;By establishing linear approximation to limit state equation, the nested searching process in solution procedure is avoided, meter is greatly improved Calculate efficiency;
4)It avoids and designs optimizing solution nested with about beam analysis in optimization routine model, by design optimization and Ge Yue beam analysis It is changed into a sequence solution procedure, further improves efficiency and convergence.
Description of the drawings
Fig. 1 is Board level packaging design optimization flow chart of the institute's needle of the present invention to integrated QFN chips;
Fig. 2 is integrated circuit board encapsulation figure;
Fig. 3 is integrated circuit board Thermal-mechanical Coupling simulation model figure;
Fig. 4 is QFN chips thermal stress figure under Board level packaging optimal design;
Fig. 5 is QFN chips buckle pattern under Board level packaging optimal design.
Specific implementation mode
The present invention will be further described with reference to the accompanying drawings and embodiments.
Shown in referring to Fig.1, a kind of Board level packaging design optimization method for integrated QFN chips of the present invention, step It is rapid as follows.
1)Step 1 determines the parameter of integrated circuit board and establishes Thermal-mechanical Coupling simulation model
With reference to shown in Fig. 2, according to existing information, the parameter of integrated circuit board is determined, including:Substrate 01, QFN chips each section 02 ~ 06 and the structure size of device 07 ~ 10, plane coordinates, elasticity modulus, Poisson's ratio, coefficient of thermal expansion, work heat consumption, Yi Jigu The plane coordinates of fixed point 11 ~ 12, the operating temperature section [- 20 DEG C, 60 DEG C] of integrated circuit board;Specifying information such as Tables 1 and 2 institute Row.Circuit board Thermal-mechanical Coupling emulation mould as shown in Figure 3 is established by finite element analysis software ABAQUS according to above- mentioned information Type.
1 substrate of table and device parameters
2 fixed point parameter of table
2)Step 2 builds the performance function of pad thermal stress and chip warpage
Using fixed point normal direction coordinate as independent variable, using QFN chip bonding pad peak value thermal stress and QFN chip interiors chip warpage as because Variable builds pad thermal stress performance function respectivelyσ(X) and chip warpage performance functionδ(X);σIndicate that pad peak heat is answered Power;δIndicate chip warpage, i.e. Norma l deviation between chip angle point and center;XIndicate fixed point normal direction coordinate vector, it is writeable AtX =(X 1, X 2, X 3, X 4)。
3)Step 3 builds the limit state equation of pad thermal stress and chip warpage
In Board level packaging design process, theoretically all parameters of said integrated circuit plate can be regarded as design variable;So And encapsulating design would generally be subject to many limitations in Practical Project, for example system structure requires, encapsulating material limits etc..And In most cases, the normal direction coordinate of fixed point can be determined by designer;So fixed point normal direction is sat in institute's extracting method Mark is regarded as design variable.Max expression peak computationals, maxσ(X)| eIndicate the pad thermal stress for having when fixing point tolerance Peak value, maxδ(X)| eIndicate the chip warpage peak value for having when fixing point tolerance;[σ]=56Mpa indicates bonding pad material Allowable stress;[δ]=0.04mm indicates the allowance for camber of chip;eFixed point error margin is indicated, for a certainX i Due to existinge,X i No longer it is a determination value and belongs to a section;The bound in the section is:X i C - eWithX i C + e,X i C For interval midpoint.
4)Step 4 builds the approximate limit state equation of pad thermal stress and chip warpage
Exist to the limit state equation of pad thermal stressXMidpoint vectorX C Place establishes linear approximation, structure pad thermal stress Approximate limit state equation:
L σ (X) =σ(X C ) + e n i=1|∂σ(X C )/∂X i | -[σ] = 0
The optimal encapsulation design based on pad thermal stress can be obtained by solving above formula:(X σ , e σ ) = (0, 0.1mm, -0.1mm, 0.1mm, 0.05mm) 。
Exist to the limit state equation of chip warpageXMidpoint vectorX C Place establishes linear approximation, builds chip warpage Approximate limit state equation:
L δ (X) = δ(X C ) + e n i=1|∂δ(X C )/∂X i | - [δ] = 0
The optimal encapsulation design based on chip warpage can be obtained by solving above formula:(X δ , e δ ) = (0, -0.1mm, -0.02mm, 0.1mm, 0.03mm ) 。
5)Step 5 checks pad intensity and chip warpage
Will (X σ , e σ ) it is updated to the left side of chip warpage approximate limit state equation, resulting value 0.011mm is more than 0;It indicates Under the encapsulation design scheme, the practical warp value of chip has been over allowance for camber value, so (X σ , e σ ) it is trivial solution.It will (X δ , e δ ) it is updated to the left side of pad thermal stress approximate limit state equation, resulting value -1.0Mpa is less than 0;Indicate that the encapsulation is set Meter scheme can meet design requirement of both chip warpage and pad thermal stress simultaneously, so (X δ , e δ ) it is feasible solution.
6)Step 6 terminates, and exports Board level packaging optimal design and fixed point Optimal error tolerance
By step 5)Obtain feasible solution (X δ , e δ ) write as (X *, e *) and export;X *=[0, -0.1mm, -0.02mm, 0.1mm ,] indicate that integrated circuit board encapsulates optimal design,e *=0.02mm indicates fixed point Optimal error tolerance.
To show the characteristic of institute's extracting method of the present invention, the Board level packaging obtained by conventional method can be designed and institute's extracting method obtains To optimal design do comparative analysis.In conventional method, fixed point normal direction coordinate is usually thought of as by Board level packaging designX (0) =(0,0,0,0), and its error margin can be given according to prior art and design requiremente (0)= 0.02mm.Pass through step Three limit state equations calculate pad thermal stress peak value maxσ(X (0))|e (0)}=55.09Mpa and crystal warpage peak value max {δ(X (0))|e (0)}=0.052mm.It can be found that crystal warpage peak value be more than its allowable value [δ]=0.04mm shows conventional side Board level packaging design obtained by method cannot meet the design requirement of the integrated circuit board.And the plate grade envelope that institute's extracting method of the present invention obtains It fills under optimal design, pad thermal stress peak value maxσ(X *)|e *}=55.0Mpa and crystal warpage peak value maxδ(X *)|e *}= 0.04mm;Chip warpage has compared with initial scheme and largely reduces(It is reduced to 0.04mm from 0.052mm, reduces 23.1%), And thermal stress peak value and warpage peak value are respectively less than respective allowable value.Also, the error margin after optimizinge *=0.03mm is compared with root It is given according to experiencee (0) =0.02mm is largely promoted(The former is 1.5 times of the latter);Tolerance is easy bigger, technique hardly possible Degree and manufacturing cost are lower.It is indicated above that Board level packaging optimal design obtained by institute's extracting method of the present invention can take into account high reliability And high performance-price ratio, there is good comprehensive performance.
In addition, eliminating by establishing linear approximation to limit state equation in step 4 and designing change in solution procedure The nested searching process that amount optimizing is analyzed with error burst, greatly improves computational efficiency.It is different from classical algorithm, this hair Bright institute's extracting method will design optimizing solution nested with about beam analysis and be changed by two Solving Equation of State(Such as step 4)With It checks twice(Such as step 5)The sequence process of composition, further improves efficiency and convergence.

Claims (8)

1. a kind of Board level packaging design optimization method for integrated QFN chips, this approach includes the following steps:
It determines the parameter of integrated circuit board and establishes Thermal-mechanical Coupling simulation model;
Build the performance function of pad thermal stress and chip warpage;
Build the limit state equation of pad thermal stress and chip warpage;
Build the approximate limit state equation of pad thermal stress and chip warpage;
Check pad intensity and chip warpage;
Terminate and export Board level packaging optimal design and fixed point Optimal error tolerance.
2. the S type runner layout optimization design methods according to claim 1 for liquid cooling heat radiator, which is characterized in that The step 1)The parameter of middle integrated circuit board includes:The structure size of substrate and each device, plane coordinates, elasticity modulus, pool The operating temperature section of loose ratio, coefficient of thermal expansion, work heat consumption and fixed point plane coordinates, integrated circuit board;The step 1)Middle Thermal-mechanical Coupling simulation model refers to:According to identified integrated circuit board parameter, it is imitative to establish integrated circuit board Thermal-mechanical Coupling True mode.
3. the S type runner layout optimization design methods according to claim 1 for liquid cooling heat radiator, which is characterized in that The step 2)The performance function of middle pad thermal stress and chip warpage refers to:Using fixed point normal direction coordinate as independent variable, with QFN Chip bonding pad peak value thermal stress and QFN chip interior chip warpages are dependent variable, build pad thermal stress performance function respectivelyσ (X) and chip warpage performance functionδ(X);σIndicate pad peak value thermal stress;δIndicate chip warpage, i.e. chip angle point and center Between Norma l deviation;XIt indicates fixed point normal direction coordinate vector, can be write asX =(X 1, X 2,…,X i ,…,X n )。
4. the S type runner layout optimization design methods according to claim 1 for liquid cooling heat radiator, which is characterized in that The step 3)The limit state equation of middle pad thermal stress and chip warpage refers to:Consider there are fixed point mismachining tolerance, point Not Gou Jian QFN chip bonding pad peak heat limiting range of stress state equations maxσ(X)| e } -[σ]=0 and QFN chip interiors are brilliant Piece buckle limit state equation maxδ(X)| e } -[δ] = 0;Max expression peak computationals, maxσ(X)| eIndicate to deposit Pad thermal stress peak value in fixed point tolerance, maxδ(X)|eIndicate the chip warpage peak for having when fixing point tolerance Value;[σ] indicate bonding pad material allowable stress;[δ] indicate chip allowance for camber;eFixed point error margin is indicated, to Mr. Yu OneX i Due to existinge,X i No longer it is a determination value and belongs to a section;The bound in the section is:X i C - eWithX i C + e,X i C For interval midpoint.
5. the S type runner layout optimization design methods according to claim 1 for liquid cooling heat radiator, which is characterized in that The step 4)The approximate limit state equation of middle pad thermal stress refers to:Exist to the limit state equation of pad thermal stressX's Midpoint vectorX C Place establishes linear approximation, builds the approximate limit state equation of pad thermal stress:
L σ (X) =σ(X C ) + e n i=1|∂σ(X C )/∂X i | -[σ] = 0
The optimal encapsulation design based on pad thermal stress can be obtained by solving above formula:(X σ , e σ )。
6. the S type runner layout optimization design methods according to claim 1 for liquid cooling heat radiator, which is characterized in that The step 4)The approximate limit state equation of middle chip warpage refers to:Exist to the limit state equation of chip warpageXMidpoint VectorX C Place establishes linear approximation, builds the approximate limit state equation of chip warpage:
L δ (X) = δ(X C ) + e n i=1|∂δ(X C )/∂X i | -[δ] = 0
The optimal encapsulation design based on chip warpage can be obtained by solving above formula:(X δ , e δ )。
7. the S type runner layout optimization design methods according to claim 1 for liquid cooling heat radiator, which is characterized in that The step 5)Middle check pad intensity refers to:Will (X σ , e σ ) it is updated to the left side of chip warpage approximate limit state equation, 0 such as less than or equal to of resulting value (X σ , e σ ) it is feasible solution, it is otherwise trivial solution;The step 5)Lieutenant colonel's nuclear crystalline film warpage is Refer to:Will (X δ , e δ ) it is updated to the left side of pad thermal stress approximate limit state equation, 0 such as less than or equal to of resulting value (X δ ,e δ ) it is feasible solution, it is otherwise trivial solution.
8. the S type runner layout optimization design methods according to claim 1 for liquid cooling heat radiator, which is characterized in that The step 6)Middle Board level packaging optimal design and fixed point Optimal error tolerance refer to:The step 5)Obtained feasible solution, Can be write as (X *, e *);X *Indicate Board level packaging optimal design,e *Indicate fixed point Optimal error tolerance.
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111985055A (en) * 2020-08-28 2020-11-24 北京世冠金洋科技发展有限公司 Model packaging method and device and electronic equipment
CN113068326A (en) * 2021-03-29 2021-07-02 北京小米移动软件有限公司 Welding quality processing method and device and circuit board
CN114417476A (en) * 2022-01-24 2022-04-29 杭州朗迅科技有限公司 Virtual simulation model and practical training system of integrated circuit packaging industrial line
CN116401803A (en) * 2021-12-20 2023-07-07 本源量子计算科技(合肥)股份有限公司 Thermodynamic simulation method, device and storage medium for quantum chip packaging structure

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6291884B1 (en) * 1999-11-09 2001-09-18 Amkor Technology, Inc. Chip-size semiconductor packages
US20070068605A1 (en) * 2005-09-23 2007-03-29 U.I.T., Llc Method of metal performance improvement and protection against degradation and suppression thereof by ultrasonic impact
US20100052141A1 (en) * 2008-09-01 2010-03-04 Cambridge Silicon Radio Ltd. Qfn package
US20100103977A1 (en) * 2008-10-29 2010-04-29 Elpida Memory, Inc. Method of analyzing thermal stress according to filling factor of filler in resin
US20110233771A1 (en) * 2010-03-26 2011-09-29 Samsung Electronics Co., Ltd. Semiconductor packages having warpage compensation
US20120326304A1 (en) * 2011-06-24 2012-12-27 Warren Robert W Externally Wire Bondable Chip Scale Package in a System-in-Package Module
US20120326286A1 (en) * 2011-06-23 2012-12-27 Zigmund Ramirez Camacho Integrated circuit packaging system with wafer level reconfigured multichip packaging system and method of manufacture thereof
US20140251658A1 (en) * 2013-03-07 2014-09-11 Bridge Semiconductor Corporation Thermally enhanced wiring board with built-in heat sink and build-up circuitry
US9000587B1 (en) * 2013-03-12 2015-04-07 Maxim Integrated Products, Inc. Wafer-level thin chip integration
CN104701292A (en) * 2013-12-06 2015-06-10 上海北京大学微电子研究院 Method for collaboratively and optimally designing high-speed IC-QFN (integrated circuit-quad flat no-lead) packages
US20150255413A1 (en) * 2014-03-04 2015-09-10 Maxim Integrated Products, Inc. Enhanced board level reliability for wafer level packages
WO2016081806A1 (en) * 2014-11-20 2016-05-26 Microchip Technology Incorporated Qfn package with improved contact pins
US20170187379A1 (en) * 2015-12-29 2017-06-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, computer, and electronic device

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6291884B1 (en) * 1999-11-09 2001-09-18 Amkor Technology, Inc. Chip-size semiconductor packages
US20070068605A1 (en) * 2005-09-23 2007-03-29 U.I.T., Llc Method of metal performance improvement and protection against degradation and suppression thereof by ultrasonic impact
US20100052141A1 (en) * 2008-09-01 2010-03-04 Cambridge Silicon Radio Ltd. Qfn package
US20100103977A1 (en) * 2008-10-29 2010-04-29 Elpida Memory, Inc. Method of analyzing thermal stress according to filling factor of filler in resin
US20110233771A1 (en) * 2010-03-26 2011-09-29 Samsung Electronics Co., Ltd. Semiconductor packages having warpage compensation
US20120326286A1 (en) * 2011-06-23 2012-12-27 Zigmund Ramirez Camacho Integrated circuit packaging system with wafer level reconfigured multichip packaging system and method of manufacture thereof
US20120326304A1 (en) * 2011-06-24 2012-12-27 Warren Robert W Externally Wire Bondable Chip Scale Package in a System-in-Package Module
US20140251658A1 (en) * 2013-03-07 2014-09-11 Bridge Semiconductor Corporation Thermally enhanced wiring board with built-in heat sink and build-up circuitry
US9000587B1 (en) * 2013-03-12 2015-04-07 Maxim Integrated Products, Inc. Wafer-level thin chip integration
CN104701292A (en) * 2013-12-06 2015-06-10 上海北京大学微电子研究院 Method for collaboratively and optimally designing high-speed IC-QFN (integrated circuit-quad flat no-lead) packages
US20150255413A1 (en) * 2014-03-04 2015-09-10 Maxim Integrated Products, Inc. Enhanced board level reliability for wafer level packages
WO2016081806A1 (en) * 2014-11-20 2016-05-26 Microchip Technology Incorporated Qfn package with improved contact pins
US20170187379A1 (en) * 2015-12-29 2017-06-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, computer, and electronic device

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
WU R W 等: "Prediction of package warpage combined experimental and simulation for four maps substrate", 《PROCEEDINGS OF INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY&HIGH DENSITY PACKAGING(ICEPT-HDP)》 *
周嘉诚等: "基于有限元的车载电路板多场热应力分析", 《武汉纺织大学学报》 *
牛利刚等: "晶圆尺寸级封装器件的热应力及翘曲变形", 《电子元件与材料》 *
谭琳等: "FBGA封装翘曲的黏弹性仿真与验证", 《半导体技术》 *
黄志亮等: "预变形印刷电路板热-力耦合结构优化设计", 《计算机辅助工程》 *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111985055A (en) * 2020-08-28 2020-11-24 北京世冠金洋科技发展有限公司 Model packaging method and device and electronic equipment
CN111985055B (en) * 2020-08-28 2023-08-08 北京世冠金洋科技发展有限公司 Model packaging method and device and electronic equipment
CN113068326A (en) * 2021-03-29 2021-07-02 北京小米移动软件有限公司 Welding quality processing method and device and circuit board
CN116401803A (en) * 2021-12-20 2023-07-07 本源量子计算科技(合肥)股份有限公司 Thermodynamic simulation method, device and storage medium for quantum chip packaging structure
CN116401803B (en) * 2021-12-20 2024-06-14 本源量子计算科技(合肥)股份有限公司 Thermodynamic simulation method, device and storage medium for quantum chip packaging structure
CN114417476A (en) * 2022-01-24 2022-04-29 杭州朗迅科技有限公司 Virtual simulation model and practical training system of integrated circuit packaging industrial line

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Inventor after: Huang Zhiliang

Inventor after: Zeng Qi

Inventor after: Zeng Xianchen

Inventor after: Yang Tongguang

Inventor after: Li Hangyang

Inventor after: Zhao Zhiguo

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Denomination of invention: An Optimization Method of Board Level Packaging Design for Integrated QFN Chip

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