CN108601209A - Soft or hard combination package substrate of a kind of high heat conduction height insulation and preparation method thereof - Google Patents
Soft or hard combination package substrate of a kind of high heat conduction height insulation and preparation method thereof Download PDFInfo
- Publication number
- CN108601209A CN108601209A CN201810675806.9A CN201810675806A CN108601209A CN 108601209 A CN108601209 A CN 108601209A CN 201810675806 A CN201810675806 A CN 201810675806A CN 108601209 A CN108601209 A CN 108601209A
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- Prior art keywords
- soft board
- copper post
- ceramic wafer
- soft
- copper
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- 239000000758 substrate Substances 0.000 title claims abstract description 33
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 238000009413 insulation Methods 0.000 title claims abstract description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 105
- 229910052802 copper Inorganic materials 0.000 claims abstract description 105
- 239000010949 copper Substances 0.000 claims abstract description 105
- 239000000919 ceramic Substances 0.000 claims abstract description 60
- 230000017525 heat dissipation Effects 0.000 claims abstract description 36
- 238000000034 method Methods 0.000 claims abstract description 24
- 230000008569 process Effects 0.000 claims abstract description 13
- 238000000227 grinding Methods 0.000 claims abstract description 10
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 9
- 238000004519 manufacturing process Methods 0.000 claims abstract description 6
- 238000007747 plating Methods 0.000 claims description 5
- 238000003466 welding Methods 0.000 claims description 5
- 238000005553 drilling Methods 0.000 claims description 4
- 238000009713 electroplating Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 238000003698 laser cutting Methods 0.000 claims description 2
- 230000037361 pathway Effects 0.000 abstract description 7
- 239000002184 metal Substances 0.000 abstract description 2
- 229910052751 metal Inorganic materials 0.000 abstract description 2
- 239000006227 byproduct Substances 0.000 abstract 1
- 230000002787 reinforcement Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 6
- 230000008901 benefit Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910000831 Steel Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
- H05K1/0203—Cooling of mounted components
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
- H05K1/0203—Cooling of mounted components
- H05K1/0207—Cooling of mounted components using internal conductor planes parallel to the surface for thermal conduction, e.g. power planes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Soft or hard combination package substrate of a kind of high heat conduction height insulation and preparation method thereof, step：Make soft board；Glue-line is mounted in the lower surface of soft board, and corresponding to the position windowing of heat dissipation copper post；Ceramic wafer is mounted on to the lower surface of soft board；Conducting copper post and heat dissipation copper post are made on soft board, wherein heat dissipation copper post passes through the windowing of soft board to be connected with the upper surface of metal reinforcement plate；Insulating layer is pressed on soft board, and pastes grinding pedestal；Grinding insulating layer makes exposing conducting copper post and heat dissipation copper post, and removes grinding pedestal；Addition process technique is used to make top line on the insulating layer.Manufacture craft of the present invention is simple, the Rigid Flex combined with ceramic wafer using soft board as substrate, stablize by product size, the insulation of high heat conduction height, and cost is relatively low, high heat conduction height obtained insulate, and soft or hard combination package substrate dimensionally stable, thermally conductive pathways are simple, perfect heat-dissipating.
Description
Technical field
The present invention relates to printed circuit board manufacturing technology field more particularly to a kind of soft or hard combination encapsulation of high heat conduction height insulation
Substrate and preparation method thereof.
Background technology
Package substrate is commonly used in technical field of semiconductor encapsulation, package substrate is Substrate (abbreviation SUB), that is, is printed
Term in brush wiring board.Substrate can provide electrical connection, protection, support, heat dissipation, assembling and other effects for chip, to realize draw more
Foot, the purpose for reducing encapsulating products volume, improving electrical property and thermal diffusivity, ultra high density or multi-chip module.Currently, envelope
Dress substrate just develops towards the direction of densification.
Encapsulation technology is most important for the function of playing power semiconductor.Good electric isolution and heat management, it is minimum
Parasitic capacitance, few distributed inductance will be realized by well-designed encapsulating structure.When power semiconductor works
The power consumption of generation is converted into thermal energy, and device temperature is made to increase.Semiconductor devices power consumption is more than a critical value, will result in heat not
Stable and thermal breakdown.Meanwhile many parameters of device can also be adversely affected because temperature increases, therefore limit power and partly lead
The die temperature of body device, which is no more than certain value, just seems extremely important.And this measure is realized by encapsulating.
The package substrate of high heat conduction height insulation at present is generally divided into three kinds：One, through-hole conducting FPC plates+ceramic wafer, this knot
The heat conduction path of structure is：Ceramic wafer → tinfoil paper → IMC layers → tin+soft board hole copper → conducting resinl → steel disc, its advantage is that wiring board
Processing procedure is simpler, and disadvantage is：Must arrange in pairs or groups ceramic substrate, and thermally conductive pathways are complicated, and heat-conducting area is small, and heat dissipation is general, via hole
Interior tin can not completely fill out.Two, blind hole conducting FPC plates+ceramic wafer, the heat conduction path of this structure are：Ceramic wafer → tinfoil paper
→ IMC layers → tin+soft board hole copper → conducting resinl → steel disc, its advantage is that：Wiring board processing procedure is simpler, the wind in non-soldering tin cavity
Danger, disadvantage are：Must arrange in pairs or groups ceramic substrate, and thermally conductive pathways are complicated, and heat-conducting area is small, and poor heat radiation has laser drilling process.
Three, the soft or hard combination package substrate of high heat conduction, the heat conduction path of this structure are：Ceramic wafer pad → copper post → fine copper stiffening plate,
Its advantage is that：Thermal diffusivity is good, and heat eliminating medium is fine copper, and without using ceramic substrate, total plate thickness is adjustable, and disadvantage is：Cost
Increase.
Through looking into, the Chinese patent of existing Patent No. CN201710119406.5《High heat conduction package substrate》, by two-sided deposited
The ceramics and micro heat pipe for having conductive layer are constituted, it is characterized in that：Conductive layer has pattern, and a face pattern is for encapsulating power power electronics
Device, power microwave device, logic control circuit, detection circuit, lead etc.；Another side pattern is connected with micro heat pipe.This envelope
Dress substrate passes through vacuum welding, vacuum friction welding (FW), active metal brazing, nanometer silver soldering using micro heat pipe and high-heat-conductivity ceramic circuit board
It the means such as connects and reaches metallurgical binding, reduce thermal resistance, realize high efficiency and heat radiation, but preparation process is also more complicated, cost is also higher.
Invention content
First technical problem to be solved by this invention be for the above-mentioned state of the art and provide it is a kind of it is simple in structure,
Perfect heat-dissipating and the soft or hard combination package substrate of high heat conduction height insulation at low cost.
Second technical problem to be solved by this invention be for the above-mentioned state of the art and provide it is a kind of it is simple for process,
Perfect heat-dissipating and high heat conduction height at low cost insulate the preparation method of soft or hard combination package substrate.
Technical solution is used by the present invention solves above-mentioned first technical problem：A kind of soft or hard knot of high heat conduction height insulation
Close package substrate, it is characterised in that：The high heat conduction height soft or hard combination package substrate that insulate includes setting gradually from bottom to up
The top line on ceramic wafer, soft board, insulating layer and addition surface on the insulating layer, ceramic wafer are mounted on the lower surface of soft board,
Insulating layer is pressed together on the upper surface of soft board, on soft board addition be electroplate with the conducting copper post being conducted with top line and radiating copper
Column, wherein the lower end of heat dissipation copper post is connected across soft board with the upper surface of ceramic wafer.
It is preferred that the ceramic wafer, which is pure ceramic wafer or single side, covers copper ceramic wafer or double-sided copper-clad ceramic wafer, the following table of soft board
Face paste is equipped with the glue-line for covering copper face and fitting with ceramic wafer.
Finally, the soft board is equipped with for the windowing that places of heat dissipation copper post, a diameter of 50 μm~3.0mm for the copper post that radiates,
The minimum 0.05mm of diameter of copper post is connected.
Technical solution is used by the present invention solves above-mentioned second technical problem：A kind of soft or hard knot of high heat conduction height insulation
Close the preparation method of package substrate, it is characterised in that include the following steps：
1) soft board is made；
2) glue-line is mounted in the lower surface of soft board, and corresponds to the position windowing of heat dissipation copper post on soft board；
3) ceramic wafer is mounted on to the lower surface of soft board by glue-line；
4) conducting copper post and heat dissipation copper post are made on soft board, and conducting copper post and heat dissipation copper post are electroplated, wherein
Heat dissipation copper post passes through the windowing of soft board to be connected with the upper surface of ceramic wafer；
5) insulating layer is pressed on soft board, and pastes grinding pedestal；
6) being ground to the upper surface of insulating layer makes exposing conducting copper post and heat dissipation copper post；
7) grinding pedestal is removed；
8) one layer of conductive seeds copper is deposited on the insulating layer, and top line is made using addition process technique；
9) welding resistance silk-screen exposure finally is carried out to top line.
Further, the detailed process of the making soft board of the step 1) is：First to soft board sawing sheet, is drilled and be electroplated and led
It is logical, using machine drilling or laser drill, then to soft board circuit etching, and make soft board circuit seed copper, press mold.
It is preferred that the step 3) ceramic wafer, which is pure ceramic wafer or single side, covers copper ceramic wafer or double-sided copper-clad ceramic wafer.
Further, the windowing of the step 2) is opened a window by laser cutting/mold stamp.
It is preferred that the minimum 0.05mm of diameter of the conducting copper post of the step 4), a diameter of 50 μm of the copper post that radiates~
3.0mm。
Further, the fabrication processing of the conducting copper post of the step 4) and heat dissipation copper post is：Seed copper → press mold →
Seed copper is moved back in exposure → development → copper post and heat dissipation copper post is connected in plating →.
Finally, the technological process of addition process technique making top line is in the step 6)：Seed copper → press mold → exposure
Light → development → electroplating line → moves back seed copper.
Compared with the prior art, the advantages of the present invention are as follows：The Rigid Flex conduct combined with ceramic wafer using soft board
Substrate, product size are stablized, the insulation of high heat conduction height；The conducting copper post of addition plating instead of original hardboard machine drilling, sharp
The conduction mode in drill finish hole can not only produce finer circuit, also save many wiring spaces, greatly promote wiring
Density can meet cabling requirement product size does not increase for the product of same pixel, wiring will not be subject to system
Make the limitation of technique；In addition, addition plating heat dissipation copper post, not only thermally conductive pathways are simple, also improve heat dissipation effect；Insulating layer
Thickness realizes high insulation.Manufacture craft of the present invention is simple, and cost is relatively low, and the soft or hard combination of high heat conduction height insulation obtained encapsulates base
Board size is stable, thermally conductive pathways are simple, perfect heat-dissipating.
Description of the drawings
Fig. 1 is the structural schematic diagram for the soft board that the embodiment of the present invention provides；
Fig. 2 is the structural schematic diagram that glue-line is mounted on soft board；
Fig. 3 is the structural schematic diagram in soft board uplifting window；
Fig. 4 is the structural schematic diagram after the upper ceramic wafer of soft board attachment；
Fig. 5 is the structural schematic diagram of addition heat dissipation copper post and conducting copper post on soft board；
Fig. 6 is the structural schematic diagram for pressing insulating layer on soft board and pasting after grinding pedestal；
Fig. 7 is that insulating layer grinds and removes the structural schematic diagram after mill pedestal；
Fig. 8 is the structural schematic diagram of addition top line on the insulating layer.
Specific implementation mode
Below in conjunction with attached drawing embodiment, present invention is further described in detail.
As shown in Fig. 1~8, a kind of soft or hard combination package substrate of high heat conduction, including the ceramic wafer that sets gradually from bottom to up
2, the top line 6 on soft board 1, insulating layer 3 and addition surface on the insulating layer 3, ceramic wafer 2 are mounted on the lower surface of soft board 1,
Insulating layer 3 is pressed together on the upper surface of soft board 1, on soft board 1 addition be electroplate with the conducting copper post 4 being conducted with top line 4 and dissipate
Hot copper post 5, wherein the lower end of heat dissipation copper post 5 is connected across soft board 1 with the upper surface of ceramic wafer 2；Ceramic wafer 2 can be pure pottery
Porcelain plate or single side cover copper ceramic wafer or double-sided copper-clad ceramic wafer, and the ceramic wafer 2 of the present embodiment is double-sided copper-clad ceramic wafer, soft board 1
Lower surface be pasted with the glue-line 7 to fit with ceramic wafer 2, glue-line 7 can insulate or nonisulated；It is offered on soft board 1 for dissipating
The minimum 0.05mm of diameter of copper post 4 is connected in the windowing 11 that hot copper post 5 places, a diameter of 50 μm~3.0mm for the copper post 5 that radiates,
Finer circuit can be produced, 1 circuit of such soft board is just connected by the way that copper post 4 is connected with top line 6；Radiate copper post 5
Diameter it is thicker, usual 50 μm~3.0mm, heat-conducting area is big, convenient for heat dissipation；
The high heat conduction height of the present embodiment insulate the preparation method of soft or hard combination package substrate, the specific steps are：
1) soft board 1 (such as Fig. 1) is made, detailed process is：First to soft board sawing sheet, conducting is drilled and is electroplated, using machine
Tool drills or laser drill, then to soft board circuit etching, and makes soft board circuit seed copper, press mold；
2) in the lower surface of soft board 1 attachment glue-line 7 (such as Fig. 2), glue-line 7, which insulate, nonisulated all may be used；
3) position for corresponding to heat dissipation copper post 5 on soft board 1 carries out windowing 11 (such as by laser, mold stamp or milling machine
Fig. 3)；
4) ceramic wafer 2 is mounted on to the lower surface (such as Fig. 4) of soft board 1 by glue-line 7, ceramic wafer 2 can be pure ceramic wafer
Or single side covers copper ceramic wafer or double-sided copper-clad ceramic wafer, the ceramic wafer 2 of the present embodiment is double-sided copper-clad ceramic wafer；
5) conducting copper post 4 and heat dissipation copper post 5 (such as Fig. 5) then are made in soft board 1, and to conducting copper post 4 and heat dissipation copper post 5
It is electroplated, wherein heat dissipation copper post 5 passes through the windowing 11 of soft board 1 to be connected with the upper surface of ceramic wafer 1；Copper post 4 is connected and dissipates
The fabrication processing of hot copper post 5 is：Seed copper → press mold → exposure → development → plating conducting copper post 5 and heat dissipation copper post 6 →
Move back seed copper；
6) insulating layer 3 (such as Fig. 6) is pressed on soft board 1, and is pasting grinding pedestal 8；
7) being ground to the upper surface of insulating layer 3 makes exposing conducting copper post 4 and heat dissipation copper post 5, while removing grinding bottom
8 (such as Fig. 7) of seat；
8) one layer of conductive seeds copper is deposited on the insulating layer 3, and top line 6 (such as Fig. 8) is made using addition process technique, is added
At method technique make top line 6 technological process be：Seed is moved back in seed copper → press mold → exposure → development → electroplating line →
Copper；Conducting copper post 4 and heat dissipation copper post 5 and top line 6 is set to connect；
9) welding resistance silk-screen exposure finally is carried out to top line 6.
Wherein the diameter minimum of conducting copper post 4 can be 0.05mm, can produce finer circuit in this way, also save
Many wiring space, and the diameter for the copper post 5 that radiates is thicker, typically 50 μm~3.0mm, is connected to top line 6, passes through soft
The upper surface of plate 1, ceramic wafer 2 is connected so that thermally conductive pathways are simple, and heat-conducting area is big, convenient for more radiating.
The high heat conduction height of the present invention insulate soft or hard combination package substrate compared with existing package substrate, not only structure letter
It is single, easy to make, at low cost, and thermally conductive pathways are simple, heat-conducting area is big, and heat dissipation performance is more preferable.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, without departing from the technical principles of the invention, several improvements and modifications can also be made, these improvements and modifications
Also it should be regarded as protection scope of the present invention.
Claims (10)
- The soft or hard combination package substrate 1. a kind of high heat conduction height insulate, it is characterised in that：The soft or hard combination envelope of high heat conduction height insulation Dress substrate includes the top layer line on the ceramic wafer set gradually from bottom to up, soft board, insulating layer and addition surface on the insulating layer Road, ceramic wafer are mounted on the lower surface of soft board, and insulating layer is pressed together on the upper surface of soft board, on soft board addition be electroplate with and top layer line The conducting copper post and heat dissipation copper post that road is conducted, wherein the lower end of heat dissipation copper post is connected across soft board with the upper surface of ceramic wafer It connects.
- The soft or hard combination package substrate 2. high heat conduction height according to claim 1 insulate, it is characterised in that：The ceramic wafer is Pure ceramic wafer or single side cover copper ceramic wafer or double-sided copper-clad ceramic wafer, and the lower surface of soft board is pasted with covers copper face phase with ceramic wafer The glue-line of fitting.
- The soft or hard combination package substrate 3. high heat conduction height according to claim 1 insulate, it is characterised in that：It is set on the soft board Have for the windowing that places of heat dissipation copper post, a diameter of 50 μm~3.0mm for the copper post that radiates, the diameter that copper post is connected is minimum 0.05mm。
- The preparation method of soft or hard combination package substrate 4. a kind of high heat conduction height insulate, it is characterised in that include the following steps：1) soft board is made；2) glue-line is mounted in the lower surface of soft board, and corresponds to the position windowing of heat dissipation copper post on soft board；3) ceramic wafer is mounted on to the lower surface of soft board by glue-line；4) conducting copper post and heat dissipation copper post are made on soft board, and conducting copper post and heat dissipation copper post are electroplated, wherein radiating Copper post passes through the windowing of soft board to be connected with the upper surface of ceramic wafer；5) insulating layer is pressed on soft board, and pastes grinding pedestal；6) being ground to the upper surface of insulating layer makes exposing conducting copper post and heat dissipation copper post；7) grinding pedestal is removed；8) one layer of conductive seeds copper is deposited on the insulating layer, and top line is made using addition process technique；9) welding resistance silk-screen exposure finally is carried out to top line.
- 5. preparation method according to claim 4, it is characterised in that：The making soft board of the step 1) is specially：It is first right Soft board sawing sheet is drilled and is electroplated conducting, using machine drilling or laser drill, then to soft board circuit etching, and is made Make soft board circuit seed copper, press mold.
- 6. preparation method according to claim 4, it is characterised in that：Step 3) the ceramic wafer is pure ceramic wafer or single side Cover copper ceramic wafer or double-sided copper-clad ceramic wafer.
- 7. preparation method according to claim 4, it is characterised in that：The windowing of the step 2) passes through laser cutting/mould Has stamp windowing.
- 8. preparation method according to claim 4, it is characterised in that：The diameter of the conducting copper post of the step 4) is minimum For 0.05mm, a diameter of 50 μm~3.0mm for the copper post that radiates.
- 9. preparation method according to claim 4, it is characterised in that：The conducting copper post of the step 4) and the copper post that radiates Fabrication processing is：Seed copper → press mold → exposure → development → copper post and heat dissipation copper post is connected in plating → moves back seed copper.
- 10. preparation method according to claim 4, it is characterised in that：Addition process technique makes top layer in the step 6) The technological process of circuit is：Seed copper is moved back in seed copper → press mold → exposure → development → electroplating line →.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810675806.9A CN108601209B (en) | 2018-06-27 | 2018-06-27 | High-heat-conductivity high-insulation soft and hard combined packaging substrate and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810675806.9A CN108601209B (en) | 2018-06-27 | 2018-06-27 | High-heat-conductivity high-insulation soft and hard combined packaging substrate and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108601209A true CN108601209A (en) | 2018-09-28 |
| CN108601209B CN108601209B (en) | 2024-03-22 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810675806.9A Active CN108601209B (en) | 2018-06-27 | 2018-06-27 | High-heat-conductivity high-insulation soft and hard combined packaging substrate and preparation method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109699120A (en) * | 2019-02-22 | 2019-04-30 | 业成科技（成都）有限公司 | Has the circuit board of high-efficiency heat conduction structure |
| CN110677979A (en) * | 2019-09-25 | 2020-01-10 | 宁波华远电子科技有限公司 | Preparation method of circuit board for CCM module |
| CN110708861A (en) * | 2019-09-25 | 2020-01-17 | 宁波华远电子科技有限公司 | Preparation method of circuit board for CCM module |
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| CN103369820A (en) * | 2013-07-25 | 2013-10-23 | 东莞生益电子有限公司 | PCB (printed circuit board) with high-density interconnection design and heat dissipation structure and manufacturing method thereof |
| US20160351482A1 (en) * | 2013-08-06 | 2016-12-01 | Jiangsu Changjiang Electronics Technology Co., Ltd | Etching-before-packaging three-dimensional system-level metal circuit board structure inversely provided with chip, and technological method |
| CN106961808A (en) * | 2017-02-20 | 2017-07-18 | 宁波华远电子科技有限公司 | The preparation method of sunk type high density interconnecting board |
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2018
- 2018-06-27 CN CN201810675806.9A patent/CN108601209B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103369820A (en) * | 2013-07-25 | 2013-10-23 | 东莞生益电子有限公司 | PCB (printed circuit board) with high-density interconnection design and heat dissipation structure and manufacturing method thereof |
| US20160351482A1 (en) * | 2013-08-06 | 2016-12-01 | Jiangsu Changjiang Electronics Technology Co., Ltd | Etching-before-packaging three-dimensional system-level metal circuit board structure inversely provided with chip, and technological method |
| CN106961808A (en) * | 2017-02-20 | 2017-07-18 | 宁波华远电子科技有限公司 | The preparation method of sunk type high density interconnecting board |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109699120A (en) * | 2019-02-22 | 2019-04-30 | 业成科技（成都）有限公司 | Has the circuit board of high-efficiency heat conduction structure |
| CN110677979A (en) * | 2019-09-25 | 2020-01-10 | 宁波华远电子科技有限公司 | Preparation method of circuit board for CCM module |
| CN110708861A (en) * | 2019-09-25 | 2020-01-17 | 宁波华远电子科技有限公司 | Preparation method of circuit board for CCM module |
| CN110677979B (en) * | 2019-09-25 | 2022-01-18 | 宁波华远电子科技有限公司 | Preparation method of circuit board for CCM module |
| CN110708861B (en) * | 2019-09-25 | 2022-03-01 | 宁波华远电子科技有限公司 | Preparation method of circuit board for CCM module |
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| Publication number | Publication date |
|---|---|
| CN108601209B (en) | 2024-03-22 |
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