CN108599750A - A kind of single supply driving circuit of SiC-BJT - Google Patents
A kind of single supply driving circuit of SiC-BJT Download PDFInfo
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- CN108599750A CN108599750A CN201810061829.0A CN201810061829A CN108599750A CN 108599750 A CN108599750 A CN 108599750A CN 201810061829 A CN201810061829 A CN 201810061829A CN 108599750 A CN108599750 A CN 108599750A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/0406—Modifications for accelerating switching in composite switches
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
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Abstract
A kind of single supply driving circuit of SiC BJT, belongs to power electronics field.Logic control circuit including providing the dynamic branch of pulse current, the constant current branch for providing quiescent current and control switch, wherein dynamic branch are divided into as positive pulse branch and negative pulse branch；Digital Logic control circuit is for generating first control signal, second control signal and third control signal；The input terminal of constant current branch connects power supply potential or ground potential under the control of first control signal, and output end connects the base stage of SiC BJT；The input terminal of positive pulse branch connects power supply potential or open circuit under the control of second control signal, and output end connects the base stage of SiC BJT；The input of negative pulse branch connection ground potential or open circuit under the control that third controls signal, output end connect the base stage of SiC BJT.The adjustment of pulse current width may be implemented in the present invention, reduces dynamic loss, while designing using single supply, simplifies driving circuit structure to a certain extent.
Description
Technical field
The invention belongs to power electronics fields, and in particular to a kind of single supply driving circuit of SiC-BJT.
Background technology
In numerous silicon carbide (SiC) power device, bipolar transistor (BJT) is still a kind of with development prospect
Switching device.Compared to the bipolar transistor of silicon substrate, SiC-BJT is main difference is that it can have the electric current of bigger to increase
Benefit, at the same SiC-BJT do not have in turn off process storage time influence and there is no reverse saturation current the problem of.Compared to
SiC JFET and MOSFET element, grid driving problems of the SiC-BJT without these devices.Moreover, SiC-BJT is without consideration grid
The problem of reliability and channel mobility of oxide layer.
For SiC-BJT, the design to base area driving circuit is needed to put into more energy, because of base area driving electricity
Road needs have following two functions：
1, it is required to provide suitable current impulse during turn-on and turn-off to come to the parasitism electricity of device inside
Hold charge and discharge, to achieve the purpose that quickly to be switched on and off；
2, when device works, necessary static base current can be generated to ensure that SiC-BJT is maintained at deep saturation region.
The structure for the main driving circuit that document is mentioned at present has single supply driving, dual power supply driving and discrete dual power supply to drive
It is three kinds dynamic.Wherein single supply circuit structure is simple, but the structure is difficult to be provided simultaneously with the ability of high-speed switch and low-power consumption, only
It can be used for the occasion of low performance requirement；Dual power supply driving structure is the method powered simultaneously with low pressure source using high-voltage power supply, wherein
High voltage power supply is powered for dynamic process to improve the switching speed of device, provides quiescent current using low-tension supply, in this way
Quiescent dissipation can not be promoted again while improving switching speed, but circuit structure is complex, needs dual power supply；
Discrete driving structure is then to adjust the number of base stage dead resistance according to the variation of load current, and base current is adjusted with this,
The quiescent dissipation of driving circuit is reduced, but circuit structure is increasingly complex, and feedback circuit and Digital Logical Circuits is needed to control
Base resistance number, specific implementation system complex be easy to cause some stability problems.
Invention content
For above-mentioned single supply driving circuit can not meet simultaneously low-power consumption and high switching speed and dual power supply driving and
The problem of discrete driving structure complexity, the present invention provides a kind of single supply driving circuit suitable for SiC-BJT, structure letters
It is single, while so that speed is improved, reduce the overall losses of system.
The technical scheme is that：
A kind of single supply driving circuit of SiC-BJT, including
Digital Logic control circuit, the external square-wave signal of input terminal connection, for generating first control signal S1, second
Control signal S2 and third control signal S3；
Constant current branch, input terminal connect power supply potential Vcc or ground potential under the control of the first control signal S1,
Its output end connects the base stage of the SiC-BJT；
Positive pulse branch, input terminal connect power supply potential Vcc or open circuit under the control of the second control signal S2,
Its output end connects the base stage of the SiC-BJT；
Negative pulse branch inputs connection ground potential or open circuit under the control of third control signal S3, output
End connects the base stage of the SiC-BJT.
Specifically, the constant current branch is whole including the first PMOS tube MP1, the first NMOS tube MN1, current-limiting resistance Rb and first
Diode D1 is flowed,
The base stage of first PMOS tube MP1 and the first NMOS tube MN1 interconnect and connect the first control signal S1, drain electrode
Also interconnect and connect the anode of the first rectifier diode D1, the source electrode connection power supply potential Vcc of the first PMOS tube MP1, first
The source electrode of NMOS tube MN1 connects ground potential；
One end of current-limiting resistance Rb connects the cathode of the first rectifier diode D1, and the other end is defeated as the constant current branch
Outlet.
Specifically, the positive pulse branch includes the second NMOS tube MN2 and the second rectifier diode D2,
The base stage of second NMOS tube MN2 connects the second control signal S2, drain electrode connection power supply potential Vcc, source
Pole connects the anode of the second rectifier diode D2；
Output of the cathode of second rectifier diode D2 as the positive pulse branch.
Specifically, the negative pulse branch includes third NMOS tube MN3 and third rectifier diode D3,
The base stage of third NMOS tube MN3 connects the third and controls signal S3, drain electrode connection third rectifier diode D3
Cathode, source electrode connect ground potential；
Output end of the anode of third rectifier diode D3 as the negative pulse branch.
Specifically, the first PMOS tube MP1, the first NMOS tube MN1, the second NMOS tube MN2 and third NMOS tube MN3 are
Si MOSFET。
Specifically, the Digital Logic control circuit includes the first phase inverter inv1, the second phase inverter inv2, third reverse phase
Device inv3, the 4th phase inverter inv4, two input nand gate nand2, charge and discharge capacitance Ct, comparator Comp, the first divider resistance
R1 and the second divider resistance R2,
The input terminal of first phase inverter inv1 connects the first input end of two input nand gate nand2 and as the number
The input terminal of logic control circuit, output end connect the input terminal of the second phase inverter inv2 and export the third control signal
S3；
The input terminal of 4th phase inverter inv4 connect the second phase inverter inv2 output end and third phase inverter inv3 it is defeated
Enter end, output end exports the first control signal S1；
The output end of the second input terminal connection third phase inverter inv3 of two input nand gate nand2 simultaneously passes through charge and discharge electricity
Ground potential is connected after holding Ct, output end connects the negative input of comparator Comp；
First divider resistance R1 and the second divider resistance R2 series connection, series connection point connect the positive input of comparator Comp
The other end at end, the first divider resistance R1 connects power supply potential, and the other end of the second divider resistance R2 connects ground potential；
The output end of comparator Comp exports the second control signal S2.
Beneficial effects of the present invention are：The present invention is suitable for driving SiC-BJT power devices, is replaced using Si MOSFET
Speed-up capacitor generates pulse current, can effectively control pulse width and pulse current peak, and can be according to different loads
Condition adjusts pulse width to reduce dynamic loss；The present invention is designed using single supply, simplifies driving knot to a certain extent
Structure improves the performance of single supply driving structure, can meet that drive loss is small and the fast requirement of switching speed simultaneously；The present invention adopts
It is designed with three current branch, the autonomous working of three branches is not interfere with each other, and can be effectively increased the stability of driving circuit and controllable
Property.
Description of the drawings
Fig. 1 is a kind of structural framing schematic diagram of the single supply driving circuit of SiC-BJT proposed by the invention.
Fig. 2 is a kind of simplified structure diagram of the single supply driving circuit of SiC-BJT proposed by the invention.
Fig. 3 is the structural schematic diagram of Digital Logic control circuit in embodiment.
Fig. 4 is the structural schematic diagram of the single supply driving circuit of SiC-BJT in embodiment.
Fig. 5 is that Digital Logic control circuit input-output wave shape figure and SiC-BJT ideal base stages are driven in specific embodiment
Streaming current figure.
Fig. 6 is simulation waveform of the single supply fast drive circuit in two switch periods in embodiment.
Fig. 7 is the unlatching turn off process simulation waveform of single supply fast drive circuit in one cycle in embodiment.
Specific implementation mode
In the following with reference to the drawings and specific embodiments, detailed description of the present invention technical solution：
As shown in Figure 1, the single supply fast drive circuit of SiC-BJT proposed by the present invention a kind of, including pulse electricity is provided
The logic control circuit of the dynamic branch of stream, the constant current branch for providing quiescent current and control switch, wherein dynamic branch are again
It is divided into positive pulse branch and negative pulse branch；The input terminal connection square-wave signal of Digital Logic control circuit as input signal,
For generating first control signal S1, second control signal S2 and third control signal S3；The input terminal of constant current branch is first
Connection power supply potential Vcc or ground potential under the control of signal S1 are controlled, output end connects the base stage of SiC-BJT；Positive pulse branch
The input terminal on road connects power supply potential Vcc or open circuit under the control of second control signal S2, and output end connects SiC-BJT's
Base stage；The input of negative pulse branch connection ground potential or open circuit under the control of third control signal S3, output end connection
The base stage of SiC-BJT.
The simplified structure diagram of driving circuit proposed by the present invention is as shown in Fig. 2, constant current branch routing switch T1 and T2 are controlled, just
The T3 controls of pulse branch routing switch, the T4 controls of negative pulse branch routing switch；Each branch is connected a rectifying schottky two respectively
Pole pipe is used for playing the role of rectification to each branch, prevents the excessive damage device of electric current；Last each branch output connects SiC-BJT's
Base stage provides complete driving current for the switch of power tube.
Driving circuit specific work process is as follows：
During SiC-BJT is opened, positive pulse branch route second control signal S2 controls, and switch T3, which is closed, generates arteries and veins
It is SiC-BJT parasitic capacitance quick charges to rush electric current, to make SiC-BJT open rapidly；Subsequent switch T3 is closed, while constant current
Branch switch T2, which is synchronized, to be opened, to maintain the conducting state of SiC-BJT to provide constant base current.
When SiC-BJT is turned off, constant current branch switch T1 shutdowns, Simultaneous Switching T2 unlatchings make constant current bypass diodes anode
Ground connection, prevents negative pulse current from being flowed out by constant current branch；Negative pulse branch switch T4 is opened at this time, is SiC-BJT parasitic capacitances
Electric discharge provides grounded circuit, to rapidly switch off power device.Due to the presence of constant current branch current-limiting resistance, if by negative pulse branch
Merge with constant current branch, negative pulse current peak value can be made to reduce, the turn-off time of SiC-BJT is made to extend, increases turn-off power loss,
So using three local road design schemes in the present invention.
Embodiment
Digital Logic control circuit in the present embodiment is as shown in figure 3, including the first phase inverter inv1, the second phase inverter
Inv2, third phase inverter inv3, the 4th phase inverter inv4, two input nand gate nand2, charge and discharge capacitance Ct, comparator Comp,
The input terminal of first divider resistance R1 and the second divider resistance R2, the first phase inverter inv1 connect two input nand gate nand2's
First input end and as the input terminal of Digital Logic control circuit, output end connects the input terminal of the second phase inverter inv2 simultaneously
Export third control signal S3；The input terminal of 4th phase inverter inv4 connects the output end and third reverse phase of the second phase inverter inv2
The input terminal of device inv3, output end export first control signal S1；The second input terminal connection the of two input nand gate nand2
The output end of three phase inverter inv3 and by connecting ground potential after charge and discharge capacitance Ct, output end connects the negative of comparator Comp
To input terminal；First divider resistance R1 and the second divider resistance R2 series connection, series connection point connect the positive input of comparator Comp
The other end at end, the first divider resistance R1 connects power supply potential, and the other end of the second divider resistance R2 connects ground potential；Comparator
The output end output second control signal S2 of Comp.
The input signal Vin of Digital Logic control circuit is square-wave signal, and three controls are exported respectively there are three output end
Signal is used for controlling switching on and turning off in positive pulse branch, constant current branch and negative pulse branch.First control signal
S1 is reversed square-wave signal, to control being switched on and off for constant current branch switch T1 and T2；Second control signal S2 believes for pulse
Number, generate pulse current for controlling positive pulse branch switch T3；It is reversed square-wave signal that third, which controls signal S3, negative to control
Pulse branch switch T4's is switched on and off.
Fig. 4 is the overall structure diagram of the driving circuit provided in the present embodiment, and constant current branch includes the first PMOS tube
MP1, the first NMOS tube MN1, current-limiting resistance Rb and the first rectifier diode D1, the first PMOS tube MP1 and the first NMOS tube MN1
Base stage interconnects and connects first control signal S1, drains and also interconnects and connect the anode of the first rectifier diode D1, and first
The source electrode of source electrode connection the power supply potential Vcc, the first NMOS tube MN1 of PMOS tube MP1 connect ground potential；One end of current-limiting resistance Rb
Connect the cathode of the first rectifier diode D1, output end of the other end as constant current branch.
Positive pulse branch includes that the base stage of the second NMOS tube MN2 and the second rectifier diode D2, the second NMOS tube MN2 connects
Second control signal S2, drain electrode connection power supply potential Vcc, source electrode connect the anode of the second rectifier diode D2；Second is whole
Flow output of the cathode of diode D2 as positive pulse branch.
Negative pulse branch includes third NMOS tube MN3 and third rectifier diode D3, the base stage connection of third NMOS tube MN3
Third controls signal S3, the cathode of drain electrode connection third rectifier diode D3, and source electrode connects ground potential；Two pole of third rectification
Output end of the anode of pipe D3 as negative pulse branch.
The first PMOS tube MP1, the first NMOS tube MN1, the second NMOS tube MN2 and third NMOS tube MN3 are equal in the present embodiment
For Si MOSFET.Si MOSFET, can be effectively compatible with digital circuit as voltage-controlled device, while it is electric current to export, and is met
The requirement of driving circuit voltage input and current output；Si MOSFET can be compatible with pre-driver circuit technology simultaneously, is all made of
CMOS technology can carry out single-chip integration.
Speed-up capacitor in conventional driving circuit is replaced to generate pulse current, Ke Yiyou using Si MOSFET in the present embodiment
Effect control pulse width and pulse current peak adjust pulse width to reduce drive loss according to different loading conditions；Together
When, it is designed using single supply, simplifies driving structure to a certain extent, improve the driveability of single supply driving structure,
It can meet that drive loss is small and the fast requirement of switching speed simultaneously.
Driving dynamic switch test circuit provided in this embodiment is verified using LTSPICE simulation softwares, wherein
The SPICE models of SiC-BJT are the GA20JT12 model transistor models that GeneSiC companies provide, and nominal parameter is
1200V/45A, load current 10A, load voltage 600V, switching frequency 500kHz.
It is illustrated in figure 5 Digital Logic control circuit input/output signal oscillogram and SiC-BJT ideals base drive electricity
Ib schematic diagrames are flowed, input signal Vin is square wave, since phase inverter existence time postpones, so after three-level phase inverter, output
First control signal S1 be slightly delay reversed square-wave signal, third control signal S3 be similarly reversed square-wave signal；Together
Sample generates signal delay in one charging capacitor Ct of parallel connection after three-level phase inverter with this, is generated by two input nand gates
Second control signal S2 be pulse signal, while can also adjust capacitance size be used for control wave width；Thereafter
Comparator then plays the role of signal shaping and promotes the carrying load ability of logic control circuit.Meanwhile the present invention controls three tunnels
Signal output end is isolated with phase inverter respectively, and effective solution different branch load influences each other and input waveform is caused to deform
Problem, specifically, the third control signal S3 of the first phase inverter inv1 outputs are used to control the 3rd NMOS of negative pulse branch
Pipe MN3；Third controls the two level phase inverter (buffering that signal S3 is constituted by the second phase inverter inv2 and the 4th phase inverter inv4
Device) after, the first control signal S1 of the 4th phase inverter inv4 outputs is for controlling the first PMOS tube MP1 and first in constant current branch
NMOS tube MN1；It is equally adopted between input terminal and third control the signal S3 and first control signal S1 of two input nand gate nand2
It is isolated with third phase inverter inv3, the second control signal S2 of output is for controlling the second NMOS tube in positive pulse branch
MN2, avoid leads to waveform distortions between each signal because of different loads.
Simulation waveform is as shown in Figure 6 and Figure 7, wherein IbFor the base stage input current of SiC-BJT, VloadFor SiC-BJT's
Load voltage, it can be seen that in the driving circuit that the present embodiment proposes, the switch time of SiC-BJT can be controlled in the left sides 20ns
The right side can realize the purpose of fast switching devices.
Those skilled in the art can make various do not depart from originally according to the technical disclosures disclosed by the invention
Various other specific variations and combinations of essence are invented, these variations and combinations are still within the scope of the present invention.
Claims (6)
1. the single supply driving circuit of SiC-BJT a kind of, which is characterized in that including
Digital Logic control circuit, the external square-wave signal of input terminal connection, for generating first control signal (S1), the second control
Signal (S2) processed and third control signal (S3)；
Constant current branch, input terminal connect power supply potential (Vcc) or ground potential under the control of the first control signal (S1),
Its output end connects the base stage of the SiC-BJT；
Positive pulse branch, input terminal connect power supply potential (Vcc) or open circuit under the control of the second control signal (S2),
Its output end connects the base stage of the SiC-BJT；
Negative pulse branch inputs connection ground potential or open circuit, output end under the control of third control signal (S3)
Connect the base stage of the SiC-BJT.
2. the single supply driving circuit of SiC-BJT according to claim 1, which is characterized in that the constant current branch includes
First PMOS tube (MP1), the first NMOS tube (MN1), current-limiting resistance (Rb) and the first rectifier diode (D1),
The base stage of first PMOS tube (MP1) and the first NMOS tube (MN1) interconnects and connects the first control signal (S1), leakage
Pole also interconnects and connects the anode of the first rectifier diode (D1), and the source electrode of the first PMOS tube (MP1) connects power supply potential
(Vcc), the source electrode of the first NMOS tube (MN1) connects ground potential；
One end of current-limiting resistance (Rb) connects the cathode of the first rectifier diode (D1), and the other end is defeated as the constant current branch
Outlet.
3. the single supply driving circuit of SiC-BJT according to claim 1 or 2, which is characterized in that the positive pulse branch
Including the second NMOS tube (MN2) and the second rectifier diode (D2),
The base stage of second NMOS tube (MN2) connects the second control signal (S2), and drain electrode connects power supply potential (Vcc),
Source electrode connects the anode of the second rectifier diode (D2)；
Output of the cathode of second rectifier diode (D2) as the positive pulse branch.
4. the single supply driving circuit of SiC-BJT according to claim 1 or 3, which is characterized in that the negative pulse branch
Including third NMOS tube (MN3) and third rectifier diode (D3),
The base stage of third NMOS tube (MN3) connects the third control signal (S3), drain electrode connection third rectifier diode
(D3) cathode, source electrode connect ground potential；
Output end of the anode of third rectifier diode (D3) as the negative pulse branch.
5. the single supply driving circuit of SiC-BJT according to claim 4, which is characterized in that first PMOS tube
(MP1), the first NMOS tube (MN1), the second NMOS tube (MN2) and third NMOS tube (MN3) are Si MOSFET.
6. the single supply driving circuit of SiC-BJT according to claim 1 or 4, which is characterized in that the Digital Logic control
Circuit processed includes the first phase inverter (inv1), the second phase inverter (inv2), third phase inverter (inv3), the 4th phase inverter
(inv4), two input nand gates (nand2), charge and discharge capacitance (Ct), comparator (Comp), the first divider resistance (R1) and second
Divider resistance (R2),
The input terminal of first phase inverter (inv1) connects the first input end of two input nand gates (nand2) and as the number
The input terminal of logic control circuit, output end connect the input terminal of the second phase inverter (inv2) and export the third control letter
Number (S3)；
The input terminal of 4th phase inverter (inv4) connects the output end and third phase inverter (inv3) of the second phase inverter (inv2)
Input terminal, output end export the first control signal (S1)；
The output end of the second input terminal connection third phase inverter (inv3) of two input nand gates (nand2) simultaneously passes through charge and discharge electricity
Hold (Ct) and connect ground potential afterwards, output end connects the negative input of comparator (Comp)；
First divider resistance (R1) and the second divider resistance (R2) series connection, series connection point connect the positive input of comparator (Comp)
The other end at end, the first divider resistance (R1) connects power supply potential, and the other end of the second divider resistance (R2) connects ground potential；
The output end of comparator (Comp) exports the second control signal (S2).
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110971228A (en) * | 2019-12-04 | 2020-04-07 | 成都锐成芯微科技股份有限公司 | High-speed clock driving circuit |
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| CN105743486A (en) * | 2014-12-30 | 2016-07-06 | 联发科技股份有限公司 | Driver circuit for signal transmission and control method of driver circuit |
| CN106817119A (en) * | 2015-11-30 | 2017-06-09 | 联发科技股份有限公司 | Drive circuit |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110971228A (en) * | 2019-12-04 | 2020-04-07 | 成都锐成芯微科技股份有限公司 | High-speed clock driving circuit |
| CN110971228B (en) * | 2019-12-04 | 2022-08-02 | 成都锐成芯微科技股份有限公司 | High-speed clock driving circuit |
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Application publication date: 20180928 |