CN108598177A - High yield rectifying device in high precision - Google Patents
High yield rectifying device in high precision Download PDFInfo
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- CN108598177A CN108598177A CN201710932469.2A CN201710932469A CN108598177A CN 108598177 A CN108598177 A CN 108598177A CN 201710932469 A CN201710932469 A CN 201710932469A CN 108598177 A CN108598177 A CN 108598177A
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- bending section
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- 238000003466 welding Methods 0.000 claims abstract description 39
- 238000005452 bending Methods 0.000 claims abstract description 25
- 229910000679 solder Inorganic materials 0.000 claims abstract description 24
- 230000005540 biological transmission Effects 0.000 claims abstract description 8
- 229910052709 silver Inorganic materials 0.000 claims abstract description 8
- 239000004332 silver Substances 0.000 claims abstract description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 6
- 230000005611 electricity Effects 0.000 claims 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 7
- 241000218202 Coptis Species 0.000 description 12
- 235000002991 Coptis groenlandica Nutrition 0.000 description 12
- 238000000034 method Methods 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 241001442589 Convoluta Species 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
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- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L24/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
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- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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- H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
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- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Connections Effected By Soldering, Adhesion, Or Permanent Deformation (AREA)
- Rectifiers (AREA)
- Led Device Packages (AREA)
- Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
- Die Bonding (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
The present invention discloses a kind of high yield rectifying device of high-precision, and diode chip for backlight unit one end is electrically connected by solder layer with the Support, and the first lead other end is the first pin area, the electric current transmission end of the first pin area of the first lead item as the rectifier;Second lead one end is welding section, which is second pin area, the electric current transmission end of the second pin area of the second lead item as the rectifier;The length of second bending section is more than the first bending section, so that the first welding ends is higher than the second welding ends, the welding section two sides are both provided with side block blocks, and the welding section end of this second lead item is provided with terminal block block;5% tin of the solder layer, 92.5% lead, 2.5% silver medal composition.Rectifying device of the present invention, which is realized, to be limited connection sheet in X, Y both direction while being limited to connection sheet corner, and the requirement of high-precision limit has been reached, and realization utilizes chip area to greatest extent and reduces the purpose of chip cost.
Description
Technical field
The present invention relates to a kind of rectification chip more particularly to a kind of high yield rectifying devices of high-precision.
Background technology
Rectifying device is widely used in the charger of household electrical appliances, office, Communication Equipment, the modules such as power supply;Small signal diode
Product chips size is minimum, only 0.4mm or so, it is difficult to realize that connection sheet process lot produces.Wire bond structure generally uses gold thread
And elargol, cost is higher, and routing technique process is complicated, inefficiency.Current small signal diode product is usually thread tacking
Structure, there are low process efficiency, the drawbacks such as cost is higher.Since chip size is minimum, connection sheet structural manufacturing process difficulty is high, it is difficult to
Realize batch production.
When designing and developing connection sheet structural semiconductor product, in order to utilize chip area to greatest extent, usually even
Contact pin is amplified to suitable with chip welding section area with the connection spot size of chip.Thus the problem of bringing be, to connection sheet with
The relative position precision of chip requires very high.Existing connection sheet position limiting structure is typically only capable to upper limit in one direction, it is difficult to
Reach technological requirement.Existing connection sheet structural semiconductor product is usually limited to connection sheet infinite place or using simple groove structure
Position, disadvantage is that the limit in a direction can only be done to connection sheet, and the purpose of limit is to avoid connecting in entering stove welding process
Contact pin deviation, which causes the tie point in connection sheet to deflect away from chip welding section, leads to product electrical property failure.
Invention content
It is an object of the present invention to provide a kind of high yield rectifying device of high-precision, which uses specific connection sheet generation
The scheme of existing 0.4mm sizes and chip below by gold thread and elargol has been replaced, has been solved from technological design due to weldering
The technical issues of expecting minimum dosage, solder distribution stability difference and low precision.
In order to achieve the above objectives, the technical solution adopted by the present invention is:A kind of high yield rectifying device of high-precision, including:
First lead item, the second lead item, connection sheet and diode chip for backlight unit, which connect with diode chip for backlight unit
Support, described diode chip for backlight unit one end are electrically connected by solder layer with the Support, and the first lead other end is first to draw
Foot area, the electric current transmission end of the first pin area of the first lead item as the rectifier;
Second lead one end is welding section, which is second pin area, the second lead item
The size of electric current transmission end of the second pin area as the rectifier, the diode chip for backlight unit is 0.3 ~ 1mm;
Slab region, step sector and expanded letter area are followed successively by between the connection sheet both ends, the width in the expanded letter area is at least bar shaped
There is the first downward bending section, expanded letter area end to have downward second for 3 times of the width in area, the slab region end
Bending section;
The first welding ends positioned at the first bending section end is electrically connected with the diode chip for backlight unit other end by solder layer, is located at second
It is electrically connected by solder layer between second welding ends of bending section end and the welding section of the second lead item, second bending section
Length be more than the first bending section so that the first welding ends be higher than the second welding ends, the welding section two sides are respectively provided with
There are side block blocks, the welding section end of this second lead item is provided with terminal block block;5 % tin of the solder layer, 92.5 % lead, 2.5 %
Silver composition.
Further improved scheme is as follows in above-mentioned technical proposal:
1. in said program, the width in the expanded letter area is 5 ~ 8 times of the width of slab region.
2. in said program, first bending section and step sector angle are 90 ° ~ 110 °, second bending section and ladder
Shape area angle is 90 ° ~ 110 °.
Since above-mentioned technical proposal is used, the present invention has following advantages and effect compared with prior art:
The high yield rectifying device of present invention high-precision uses specific connection sheet instead of existing 0.4mm sizes and following
Chip by the scheme of gold thread and elargol, solved from technological design since solder dosage is minimum, solder distributes stability
The technical issues of difference and low precision;Secondly, connection sheet is connect with the second lead item by specific structure, is realized to connection
Piece is limited in X, Y both direction and is limited simultaneously to connection sheet corner, has reached the requirement of high-precision limit, is realized to greatest extent
Using chip area and reduce chip cost purpose, avoid the connection sheet deviation in entering stove welding process from causing in connection sheet
Tie point deflect away from chip welding section and lead to product electrical property failure, to substantially increase yield;Again, solder layer is by 5 %
Tin, 92.5 % lead, the relatively existing solder cost of 2.5 % silver composition are lower by 96% or so than single silver, and material is that the connection sheet of copper is only
Material is general 0.025mm of gold thread line footpath or so, the blowout current that can be born about 0.5A within the 3% of the gold thread cost of gold, copper
The thickness of connection sheet can bear the electric current of 2A or more in 0.1mm or so, mean breadth 0.5mm or so, also overcome gold thread line footpath
Carefully, it is easy to happen gold thread buckling phenomenon when plastic packaging is molded and causes poor short circuit.
Description of the drawings
Attached drawing 1 is existing small signal diode device architecture schematic diagram;
Attached drawing 2 is the present invention looks up structural representation of attached drawing 2;
Attached drawing 3 is the high yield rectifying device structural schematic diagram of present invention high-precision;
Attached drawing 4 is the present invention looks up structural representation of attached drawing 3;
Attached drawing 5 is the partial structural diagram of attached drawing 3.
In the figures above:1, the first lead item;11, the first pin area;12, Support;2, the second lead item;21, second
Pin area;22, welding section;3, connection sheet;31, slab region;32, step sector;33, expanded letter area;4, diode chip for backlight unit;5, first is curved
Pars convoluta;51, the first welding ends;6, the second bending section;61, the second welding ends;7, side block blocks;8, terminal block block;9, solder layer.
Specific implementation mode
The invention will be further described with reference to the accompanying drawings and embodiments:
Embodiment:A kind of high yield rectifying device of high-precision, including:First lead item 1, the second lead item 2, connection sheet 3 and two
Pole pipe chip 4,1 one end of the first lead item are the Support 12 being connect with diode chip for backlight unit 4,4 one end of the diode chip for backlight unit
It is electrically connected with the Support 12 by solder layer 9,1 other end of the first lead item is the first pin area 11, the first lead item 1
Electric current transmission end of first pin area 11 as the rectifier;
Described second lead item, 2 one end is welding section 22, which is second pin area 21, this second draws
The size of electric current transmission end of the second pin area 21 of lines 2 as the rectifier, the diode chip for backlight unit 4 is 0.3 ~ 1mm;
Slab region 31, step sector 32 and expanded letter area 33 are followed successively by between 3 both ends of the connection sheet, the width in the expanded letter area 33 is extremely
It is 3 times of the width of slab region 31 less, 31 end of the slab region has the first downward bending section 5,33 end of the expanded letter area
Holding has the second downward bending section 6;
The first welding ends 51 positioned at 5 end of the first bending section is electrically connected with 4 other end of diode chip for backlight unit by solder layer 9, position
It is electrically connected by solder layer 9 between the second welding ends 61 and the welding section 22 of the second lead item 2 of 6 end of the second bending section,
The length of second bending section 6 is more than the first bending section 5, so that the first welding ends 51 is higher than the second welding ends 61, institute
It states 22 two sides of welding section and is both provided with side block blocks 7,22 end of welding section of this second lead item 2 is provided with terminal block block 8;It is described
Solder layer 9 is made of 5 % tin, 92.5 % lead, 2.5 % silver.
The width in above-mentioned expanded letter area 33 is 6 times of the width of slab region 31.
Above-mentioned first bending section 5 and 32 angle of step sector are 100 °, and second bending section 6 is with 32 angle of step sector
100°。
When yield rectifying device high using above-mentioned high-precision, use specific connection sheet instead of existing 0.4mm sizes
And chip below is solved from technological design by the scheme of gold thread and elargol since solder dosage is minimum, solder point
With stability difference and the technical issues of low precision;Secondly, connection sheet is connect with the second lead item by specific structure, is realized
Connection sheet is limited in X, Y both direction, connection sheet corner limited simultaneously, reached the requirement of high-precision limit, realized
It utilizes chip area to greatest extent and reduces the purpose of chip cost, the connection sheet deviation in entering stove welding process is avoided to cause
Tie point in connection sheet, which deflects away from chip welding section, leads to product electrical property failure, to substantially increase yield;Again, solder
Layer be made of that relatively existing solder cost is lower by 96% or so than single silver 5 % tin, 92.5 % lead, 2.5 % silver, material for copper company
Contact pin is only within the 3% of the gold thread cost that material is gold, and general 0.025mm of gold thread line footpath or so, the blowout current that can be born is about
The thickness of 0.5A, copper connection sheet can bear the electric current of 2A or more, also overcome in 0.1mm or so, mean breadth 0.5mm or so
Gold thread line footpath is thin, and plastic packaging is easy to happen gold thread buckling phenomenon when being molded and causes poor short circuit.
The above embodiments merely illustrate the technical concept and features of the present invention, and its object is to allow person skilled in the art
Scholar cans understand the content of the present invention and implement it accordingly, and it is not intended to limit the scope of the present invention.It is all according to the present invention
Equivalent change or modification made by Spirit Essence, should be covered by the protection scope of the present invention.
Claims (1)
1. a kind of high yield rectifying device of high-precision, including:First lead item(1), the second lead item(2), connection sheet(3)With two
Pole pipe chip(4), the first lead item(1)One end is and diode chip for backlight unit(4)The Support of connection(12), the diode core
Piece(4)One end passes through solder layer(9)With the Support(12)Electrical connection, the first lead item(1)The other end is the first pin area
(11), the first lead item(1)The first pin area(11)Electric current transmission end as the rectifier;
The second lead item(2)One end is welding section(22), the second lead item(2)The other end is second pin area(21),
The second lead item(2)Second pin area(21)As the electric current transmission end of the rectifier, the diode chip for backlight unit(4)'s
Size is 0.3 ~ 1mm;It is characterized in that:
The connection sheet(3)Slab region is followed successively by between both ends(31), step sector(32)With expanded letter area(33), the expanded letter area
(33)Width be at least slab region(31)3 times of width, the slab region(31)End has the first downward bending section
(5), the expanded letter area(33)End has the second downward bending section(6);
Positioned at the first bending section(5)First welding ends of end(51)With diode chip for backlight unit(4)The other end passes through solder layer(9)Electricity
Connection is located at the second bending section(6)Second welding ends of end(61)With the second lead item(2)Welding section(22)Between pass through
Solder layer(9)Electrical connection, second bending section(6)Length be more than the first bending section(5), so that the first welding ends
(51)Higher than the second welding ends(61), the welding section(22)Two sides are both provided with side block blocks(7), this second lead item(2)
Welding section(22)End is provided with terminal block block(8);The solder layer(9)It is made of 5 % tin, 92.5 % lead, 2.5 % silver;
The expanded letter area(33)Width be slab region(31)5 ~ 8 times of width.
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CN201710932469.2A CN108598177A (en) | 2015-01-19 | 2015-01-19 | High yield rectifying device in high precision |
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CN201710932469.2A CN108598177A (en) | 2015-01-19 | 2015-01-19 | High yield rectifying device in high precision |
CN201510026086.XA CN104617156B (en) | 2015-01-19 | 2015-01-19 | Rectification chip for microelectronic component |
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CN201510026086.XA Division CN104617156B (en) | 2015-01-19 | 2015-01-19 | Rectification chip for microelectronic component |
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CN201710932500.2A Active CN108598179B (en) | 2015-01-19 | 2015-01-19 | Large current rectifying chip for electronic product |
CN201510026086.XA Active CN104617156B (en) | 2015-01-19 | 2015-01-19 | Rectification chip for microelectronic component |
CN201710932476.2A Active CN108598178B (en) | 2015-01-19 | 2015-01-19 | Rectifying chip for microelectronic device |
CN201710932469.2A Pending CN108598177A (en) | 2015-01-19 | 2015-01-19 | High yield rectifying device in high precision |
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CN201510026086.XA Active CN104617156B (en) | 2015-01-19 | 2015-01-19 | Rectification chip for microelectronic component |
CN201710932476.2A Active CN108598178B (en) | 2015-01-19 | 2015-01-19 | Rectifying chip for microelectronic device |
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CN (4) | CN108598179B (en) |
WO (1) | WO2019071954A1 (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102842550A (en) * | 2012-08-23 | 2012-12-26 | 苏州固锝电子股份有限公司 | Dual flat package (DFN) structure of power metal-oxide-semiconductor field effect transistor (MOSFE) chip |
CN203118937U (en) * | 2013-02-01 | 2013-08-07 | 苏州固锝电子股份有限公司 | Semiconductor encapsulation structure convenient to position |
CN103681556A (en) * | 2012-09-25 | 2014-03-26 | 三星电子株式会社 | Bump structures, electrical connection structures, and methods of forming the same |
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US5736792A (en) * | 1995-08-30 | 1998-04-07 | Texas Instruments Incorporated | Method of protecting bond wires during molding and handling |
JP4334364B2 (en) * | 2004-01-26 | 2009-09-30 | 株式会社リコー | Semiconductor device and manufacturing method of semiconductor device |
CN203118997U (en) * | 2013-02-01 | 2013-08-07 | 苏州固锝电子股份有限公司 | Anti-offset diode device |
US9059185B2 (en) * | 2013-07-11 | 2015-06-16 | Texas Instruments Incorporated | Copper leadframe finish for copper wire bonding |
CN103383932A (en) * | 2013-07-12 | 2013-11-06 | 苏州固锝电子股份有限公司 | Packaging structure for improving electrical performance of chip |
CN107221522A (en) * | 2015-01-19 | 2017-09-29 | 苏州固锝电子股份有限公司 | High yield rectifying device |
CN104985351A (en) * | 2015-06-30 | 2015-10-21 | 苏州华日金菱机械有限公司 | Solder used for thick plates |
-
2015
- 2015-01-19 CN CN201710932500.2A patent/CN108598179B/en active Active
- 2015-01-19 CN CN201510026086.XA patent/CN104617156B/en active Active
- 2015-01-19 CN CN201710932476.2A patent/CN108598178B/en active Active
- 2015-01-19 CN CN201710932469.2A patent/CN108598177A/en active Pending
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- 2018-05-22 WO PCT/CN2018/087756 patent/WO2019071954A1/en active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102842550A (en) * | 2012-08-23 | 2012-12-26 | 苏州固锝电子股份有限公司 | Dual flat package (DFN) structure of power metal-oxide-semiconductor field effect transistor (MOSFE) chip |
CN103681556A (en) * | 2012-09-25 | 2014-03-26 | 三星电子株式会社 | Bump structures, electrical connection structures, and methods of forming the same |
CN203118937U (en) * | 2013-02-01 | 2013-08-07 | 苏州固锝电子股份有限公司 | Semiconductor encapsulation structure convenient to position |
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WO2019071954A1 (en) | 2019-04-18 |
CN108598179A (en) | 2018-09-28 |
CN108598178A (en) | 2018-09-28 |
CN108598178B (en) | 2020-12-04 |
CN104617156A (en) | 2015-05-13 |
CN108598179B (en) | 2023-01-31 |
CN104617156B (en) | 2017-10-13 |
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