CN108598177A - High yield rectifying device in high precision - Google Patents

High yield rectifying device in high precision Download PDF

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Publication number
CN108598177A
CN108598177A CN201710932469.2A CN201710932469A CN108598177A CN 108598177 A CN108598177 A CN 108598177A CN 201710932469 A CN201710932469 A CN 201710932469A CN 108598177 A CN108598177 A CN 108598177A
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China
Prior art keywords
lead
welding
lead item
area
bending section
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Pending
Application number
CN201710932469.2A
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Chinese (zh)
Inventor
何洪运
程琳
刘玉龙
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Suzhou Good Ark Electronics Co Ltd
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Suzhou Good Ark Electronics Co Ltd
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Application filed by Suzhou Good Ark Electronics Co Ltd filed Critical Suzhou Good Ark Electronics Co Ltd
Priority to CN201710932469.2A priority Critical patent/CN108598177A/en
Publication of CN108598177A publication Critical patent/CN108598177A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/84Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/36Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L24/37Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • HELECTRICITY
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    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/40Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
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    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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    • H01L2224/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39Structure, shape, material or disposition of the strap connectors after the connecting process
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    • H01L2224/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401Disposition
    • H01L2224/40151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/49105Connecting at different heights
    • H01L2224/49107Connecting at different heights on the semiconductor or solid-state body
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    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
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    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
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    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/83801Soldering or alloying
    • HELECTRICITY
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    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/8438Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/84385Shape, e.g. interlocking features
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    • H01L2224/84Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/848Bonding techniques
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Connections Effected By Soldering, Adhesion, Or Permanent Deformation (AREA)
  • Rectifiers (AREA)
  • Led Device Packages (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
  • Die Bonding (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)

Abstract

The present invention discloses a kind of high yield rectifying device of high-precision, and diode chip for backlight unit one end is electrically connected by solder layer with the Support, and the first lead other end is the first pin area, the electric current transmission end of the first pin area of the first lead item as the rectifier;Second lead one end is welding section, which is second pin area, the electric current transmission end of the second pin area of the second lead item as the rectifier;The length of second bending section is more than the first bending section, so that the first welding ends is higher than the second welding ends, the welding section two sides are both provided with side block blocks, and the welding section end of this second lead item is provided with terminal block block;5% tin of the solder layer, 92.5% lead, 2.5% silver medal composition.Rectifying device of the present invention, which is realized, to be limited connection sheet in X, Y both direction while being limited to connection sheet corner, and the requirement of high-precision limit has been reached, and realization utilizes chip area to greatest extent and reduces the purpose of chip cost.

Description

High yield rectifying device in high precision
Technical field
The present invention relates to a kind of rectification chip more particularly to a kind of high yield rectifying devices of high-precision.
Background technology
Rectifying device is widely used in the charger of household electrical appliances, office, Communication Equipment, the modules such as power supply;Small signal diode Product chips size is minimum, only 0.4mm or so, it is difficult to realize that connection sheet process lot produces.Wire bond structure generally uses gold thread And elargol, cost is higher, and routing technique process is complicated, inefficiency.Current small signal diode product is usually thread tacking Structure, there are low process efficiency, the drawbacks such as cost is higher.Since chip size is minimum, connection sheet structural manufacturing process difficulty is high, it is difficult to Realize batch production.
When designing and developing connection sheet structural semiconductor product, in order to utilize chip area to greatest extent, usually even Contact pin is amplified to suitable with chip welding section area with the connection spot size of chip.Thus the problem of bringing be, to connection sheet with The relative position precision of chip requires very high.Existing connection sheet position limiting structure is typically only capable to upper limit in one direction, it is difficult to Reach technological requirement.Existing connection sheet structural semiconductor product is usually limited to connection sheet infinite place or using simple groove structure Position, disadvantage is that the limit in a direction can only be done to connection sheet, and the purpose of limit is to avoid connecting in entering stove welding process Contact pin deviation, which causes the tie point in connection sheet to deflect away from chip welding section, leads to product electrical property failure.
Invention content
It is an object of the present invention to provide a kind of high yield rectifying device of high-precision, which uses specific connection sheet generation The scheme of existing 0.4mm sizes and chip below by gold thread and elargol has been replaced, has been solved from technological design due to weldering The technical issues of expecting minimum dosage, solder distribution stability difference and low precision.
In order to achieve the above objectives, the technical solution adopted by the present invention is:A kind of high yield rectifying device of high-precision, including: First lead item, the second lead item, connection sheet and diode chip for backlight unit, which connect with diode chip for backlight unit Support, described diode chip for backlight unit one end are electrically connected by solder layer with the Support, and the first lead other end is first to draw Foot area, the electric current transmission end of the first pin area of the first lead item as the rectifier;
Second lead one end is welding section, which is second pin area, the second lead item The size of electric current transmission end of the second pin area as the rectifier, the diode chip for backlight unit is 0.3 ~ 1mm;
Slab region, step sector and expanded letter area are followed successively by between the connection sheet both ends, the width in the expanded letter area is at least bar shaped There is the first downward bending section, expanded letter area end to have downward second for 3 times of the width in area, the slab region end Bending section;
The first welding ends positioned at the first bending section end is electrically connected with the diode chip for backlight unit other end by solder layer, is located at second It is electrically connected by solder layer between second welding ends of bending section end and the welding section of the second lead item, second bending section Length be more than the first bending section so that the first welding ends be higher than the second welding ends, the welding section two sides are respectively provided with There are side block blocks, the welding section end of this second lead item is provided with terminal block block;5 % tin of the solder layer, 92.5 % lead, 2.5 % Silver composition.
Further improved scheme is as follows in above-mentioned technical proposal:
1. in said program, the width in the expanded letter area is 5 ~ 8 times of the width of slab region.
2. in said program, first bending section and step sector angle are 90 ° ~ 110 °, second bending section and ladder Shape area angle is 90 ° ~ 110 °.
Since above-mentioned technical proposal is used, the present invention has following advantages and effect compared with prior art:
The high yield rectifying device of present invention high-precision uses specific connection sheet instead of existing 0.4mm sizes and following Chip by the scheme of gold thread and elargol, solved from technological design since solder dosage is minimum, solder distributes stability The technical issues of difference and low precision;Secondly, connection sheet is connect with the second lead item by specific structure, is realized to connection Piece is limited in X, Y both direction and is limited simultaneously to connection sheet corner, has reached the requirement of high-precision limit, is realized to greatest extent Using chip area and reduce chip cost purpose, avoid the connection sheet deviation in entering stove welding process from causing in connection sheet Tie point deflect away from chip welding section and lead to product electrical property failure, to substantially increase yield;Again, solder layer is by 5 % Tin, 92.5 % lead, the relatively existing solder cost of 2.5 % silver composition are lower by 96% or so than single silver, and material is that the connection sheet of copper is only Material is general 0.025mm of gold thread line footpath or so, the blowout current that can be born about 0.5A within the 3% of the gold thread cost of gold, copper The thickness of connection sheet can bear the electric current of 2A or more in 0.1mm or so, mean breadth 0.5mm or so, also overcome gold thread line footpath Carefully, it is easy to happen gold thread buckling phenomenon when plastic packaging is molded and causes poor short circuit.
Description of the drawings
Attached drawing 1 is existing small signal diode device architecture schematic diagram;
Attached drawing 2 is the present invention looks up structural representation of attached drawing 2;
Attached drawing 3 is the high yield rectifying device structural schematic diagram of present invention high-precision;
Attached drawing 4 is the present invention looks up structural representation of attached drawing 3;
Attached drawing 5 is the partial structural diagram of attached drawing 3.
In the figures above:1, the first lead item;11, the first pin area;12, Support;2, the second lead item;21, second Pin area;22, welding section;3, connection sheet;31, slab region;32, step sector;33, expanded letter area;4, diode chip for backlight unit;5, first is curved Pars convoluta;51, the first welding ends;6, the second bending section;61, the second welding ends;7, side block blocks;8, terminal block block;9, solder layer.
Specific implementation mode
The invention will be further described with reference to the accompanying drawings and embodiments:
Embodiment:A kind of high yield rectifying device of high-precision, including:First lead item 1, the second lead item 2, connection sheet 3 and two Pole pipe chip 4,1 one end of the first lead item are the Support 12 being connect with diode chip for backlight unit 4,4 one end of the diode chip for backlight unit It is electrically connected with the Support 12 by solder layer 9,1 other end of the first lead item is the first pin area 11, the first lead item 1 Electric current transmission end of first pin area 11 as the rectifier;
Described second lead item, 2 one end is welding section 22, which is second pin area 21, this second draws The size of electric current transmission end of the second pin area 21 of lines 2 as the rectifier, the diode chip for backlight unit 4 is 0.3 ~ 1mm;
Slab region 31, step sector 32 and expanded letter area 33 are followed successively by between 3 both ends of the connection sheet, the width in the expanded letter area 33 is extremely It is 3 times of the width of slab region 31 less, 31 end of the slab region has the first downward bending section 5,33 end of the expanded letter area Holding has the second downward bending section 6;
The first welding ends 51 positioned at 5 end of the first bending section is electrically connected with 4 other end of diode chip for backlight unit by solder layer 9, position It is electrically connected by solder layer 9 between the second welding ends 61 and the welding section 22 of the second lead item 2 of 6 end of the second bending section, The length of second bending section 6 is more than the first bending section 5, so that the first welding ends 51 is higher than the second welding ends 61, institute It states 22 two sides of welding section and is both provided with side block blocks 7,22 end of welding section of this second lead item 2 is provided with terminal block block 8;It is described Solder layer 9 is made of 5 % tin, 92.5 % lead, 2.5 % silver.
The width in above-mentioned expanded letter area 33 is 6 times of the width of slab region 31.
Above-mentioned first bending section 5 and 32 angle of step sector are 100 °, and second bending section 6 is with 32 angle of step sector 100°。
When yield rectifying device high using above-mentioned high-precision, use specific connection sheet instead of existing 0.4mm sizes And chip below is solved from technological design by the scheme of gold thread and elargol since solder dosage is minimum, solder point With stability difference and the technical issues of low precision;Secondly, connection sheet is connect with the second lead item by specific structure, is realized Connection sheet is limited in X, Y both direction, connection sheet corner limited simultaneously, reached the requirement of high-precision limit, realized It utilizes chip area to greatest extent and reduces the purpose of chip cost, the connection sheet deviation in entering stove welding process is avoided to cause Tie point in connection sheet, which deflects away from chip welding section, leads to product electrical property failure, to substantially increase yield;Again, solder Layer be made of that relatively existing solder cost is lower by 96% or so than single silver 5 % tin, 92.5 % lead, 2.5 % silver, material for copper company Contact pin is only within the 3% of the gold thread cost that material is gold, and general 0.025mm of gold thread line footpath or so, the blowout current that can be born is about The thickness of 0.5A, copper connection sheet can bear the electric current of 2A or more, also overcome in 0.1mm or so, mean breadth 0.5mm or so Gold thread line footpath is thin, and plastic packaging is easy to happen gold thread buckling phenomenon when being molded and causes poor short circuit.
The above embodiments merely illustrate the technical concept and features of the present invention, and its object is to allow person skilled in the art Scholar cans understand the content of the present invention and implement it accordingly, and it is not intended to limit the scope of the present invention.It is all according to the present invention Equivalent change or modification made by Spirit Essence, should be covered by the protection scope of the present invention.

Claims (1)

1. a kind of high yield rectifying device of high-precision, including:First lead item(1), the second lead item(2), connection sheet(3)With two Pole pipe chip(4), the first lead item(1)One end is and diode chip for backlight unit(4)The Support of connection(12), the diode core Piece(4)One end passes through solder layer(9)With the Support(12)Electrical connection, the first lead item(1)The other end is the first pin area (11), the first lead item(1)The first pin area(11)Electric current transmission end as the rectifier;
The second lead item(2)One end is welding section(22), the second lead item(2)The other end is second pin area(21), The second lead item(2)Second pin area(21)As the electric current transmission end of the rectifier, the diode chip for backlight unit(4)'s Size is 0.3 ~ 1mm;It is characterized in that:
The connection sheet(3)Slab region is followed successively by between both ends(31), step sector(32)With expanded letter area(33), the expanded letter area (33)Width be at least slab region(31)3 times of width, the slab region(31)End has the first downward bending section (5), the expanded letter area(33)End has the second downward bending section(6);
Positioned at the first bending section(5)First welding ends of end(51)With diode chip for backlight unit(4)The other end passes through solder layer(9)Electricity Connection is located at the second bending section(6)Second welding ends of end(61)With the second lead item(2)Welding section(22)Between pass through Solder layer(9)Electrical connection, second bending section(6)Length be more than the first bending section(5), so that the first welding ends (51)Higher than the second welding ends(61), the welding section(22)Two sides are both provided with side block blocks(7), this second lead item(2) Welding section(22)End is provided with terminal block block(8);The solder layer(9)It is made of 5 % tin, 92.5 % lead, 2.5 % silver;
The expanded letter area(33)Width be slab region(31)5 ~ 8 times of width.
CN201710932469.2A 2015-01-19 2015-01-19 High yield rectifying device in high precision Pending CN108598177A (en)

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Application Number Priority Date Filing Date Title
CN201710932469.2A CN108598177A (en) 2015-01-19 2015-01-19 High yield rectifying device in high precision

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Application Number Priority Date Filing Date Title
CN201710932469.2A CN108598177A (en) 2015-01-19 2015-01-19 High yield rectifying device in high precision
CN201510026086.XA CN104617156B (en) 2015-01-19 2015-01-19 Rectification chip for microelectronic component

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CN201510026086.XA Division CN104617156B (en) 2015-01-19 2015-01-19 Rectification chip for microelectronic component

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CN108598177A true CN108598177A (en) 2018-09-28

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CN108598179A (en) 2018-09-28
CN108598178A (en) 2018-09-28
CN108598178B (en) 2020-12-04
CN104617156A (en) 2015-05-13
CN108598179B (en) 2023-01-31
CN104617156B (en) 2017-10-13

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Application publication date: 20180928