CN108588681A - MOCVD systems and its method for cleaning - Google Patents
MOCVD systems and its method for cleaning Download PDFInfo
- Publication number
- CN108588681A CN108588681A CN201810514998.5A CN201810514998A CN108588681A CN 108588681 A CN108588681 A CN 108588681A CN 201810514998 A CN201810514998 A CN 201810514998A CN 108588681 A CN108588681 A CN 108588681A
- Authority
- CN
- China
- Prior art keywords
- lid
- pipeline
- temperature control
- tamper
- heating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4407—Cleaning of reactor or reactor parts by using wet or mechanical methods
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45568—Porous nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Cleaning In General (AREA)
Abstract
Present invention is disclosed a kind of MOCVD systems and its method for cleaning, MOCVD systems include reaction unit and heating device, reaction unit includes lid, spray is provided on lid with going out source aperture, top surface and/or go out during source aperture inner reaction to be attached with tamper, heating devices heat lid and so that tamper is in molten condition.The MOCVD systems of the present invention so that tamper is in molten condition by heating device, can simplify subsequent tamper scale removal process, to improve MOCVD system service efficiencies.
Description
Technical field
The present invention relates to vapor deposition field more particularly to a kind of MOCVD systems and its method for cleaning.
Background technology
MOCVD（Metal-Organic Chemical Vapor Deposition, metallo-organic compound chemical gaseous phase
Deposition）It is in vapor phase epitaxial growth（Vapour Phase Epitaxy, VPE）On the basis of a kind of novel gas phase for growing up
Growth technology.MOCVD is the core equipment of prepare compound semiconductor epitaxial material, with III race, II race's element it is organic
The hydride etc. of compound and V, VI race's element are used as crystal growth source material, on substrate into promoting the circulation of qi in a manner of pyrolysis
Phase epitaxy is mainly used for growing the thin layer list of various III-V races, group Ⅱ-Ⅵ compound semiconductor and their multivariate solid solution
Brilliant material covers all common semiconductors, there is boundless market prospects.
Currently, MOCVD systems generally comprise reaction cavity and the lid above reaction cavity, spray is provided on lid
With source aperture is gone out, metallo-organic compound and hydride etc. are sprayed to by lid in reaction cavity with certain speed for leaching.
In the prior art, small and dense pore type on lid is set and source aperture, product quality, and uniformity can be improved
Good, yield is high, and still, with putting off for production time, reaction product or raw material etc. are easy to block out source aperture, especially works as temperature control
Go out source aperture be blocked when, temperature adjustment process will be seriously affected, to influence epitaxial process.
Therefore, putting off with the production time needs to disassemble lid and clear up, and scale removal process is more numerous
Trivial, the time is veryer long, moreover, the lid after having cleared up is assembled to the adaptation for passing through a very long time after reaction cavity again
Process, in whole dismounting, in period for re-assemblying and adapting to, various losses are very huge, and how to solve the above problems is ability
Field technique personnel are badly in need of the project of research.
Invention content
The purpose of the present invention is to provide a kind of MOCVD systems and its method for cleaning, can simplify lid scale removal process,
Meanwhile improving MOCVD system service efficiencies.
One of for achieving the above object, an embodiment of the present invention provides a kind of MOCVD systems, including reaction unit
And heating device, the reaction unit include lid, spray are provided on the lid with going out source aperture, the top surface with/
Or it is described go out source aperture inner reaction during be attached with tamper, lid described in the heating devices heat and make the blocking
Object is in molten condition.
As being further improved for an embodiment of the present invention, the heating device includes accommodating the first of hot media to accommodate
Chamber, by heat cycles pipeline connection between first accommodating chamber and the lid, the hot media is in the heat cycles
Pipeline internal circulation flow and heat the lid.
As being further improved for an embodiment of the present invention, the MOCVD systems further include for regulating and controlling the lid
The temperature regulating device and control unit of reaction temperature, the temperature regulating device include the second accommodating chamber for accommodating temperature control media, and described the
It is connected to by temperature control circulation line between two accommodating chambers and the lid, the temperature control media are followed in the temperature control circulation line
Circulation is dynamic and adjusts the temperature of the lid, and described control unit is for controlling the heat cycles pipeline and temperature control cycle
Switching between pipeline.
As being further improved for an embodiment of the present invention, the heat cycles pipeline includes being connected to described first to accommodate
First output heating pipeline of chamber, the second output heating pipeline of the first input heating pipeline and the connection lid, second
Input heating pipeline, the temperature control circulation line includes the first output temperature control pipeline of connection second accommodating chamber, first defeated
Enter the second output temperature control pipeline, the second input temperature control pipeline of temperature control pipeline and the connection lid, second output adds
It is lid output pipe that pipe line is integrated with the second output temperature control pipeline, the second input heating pipeline and described the
Two input temperature control pipeline integrations are lid intake line, and the MOCVD systems further include being separately connected the lid efferent duct
The first switch and second switch of road and the lid intake line, when the MOCVD systems are in reaction process, the control
Unit processed controls the first switch connection the first output temperature control pipeline, and second switch connection first input
Temperature control pipeline, when the MOCVD systems are in scale removal process, described control unit controls first switch connection described the
One output heating pipeline, and second switch connection the first input heating pipeline.
As being further improved for an embodiment of the present invention, the lid includes the first lid, the second lid and is located at
Thermal insulation layer between first lid and second lid, second lid go out source aperture, the heating dress including described in
It sets for heating second lid.
As being further improved for an embodiment of the present invention, the heated perimeter of the heating device is 80 DEG C ~ 300 DEG C,
Ranging from 20 DEG C ~ 100 DEG C of the temperature control of the temperature regulating device.
As being further improved for an embodiment of the present invention, the MOCVD systems further include cleaning plant, the cleaning
Device is to blow formula cleaning plant or suction cleaning plant, it is described blow formula cleaning plant for clear up disassemble and tamper is in melting
Melt the lid of state, the suction cleaning plant, which is used to clear up, to be maintained in the reaction unit and tamper is in molten condition
Lid.
One of for achieving the above object, an embodiment of the present invention provides a kind of MOCVD cleaned systems method, described
MOCVD systems include lid, spray are provided on the lid with source aperture is gone out, the method for cleaning includes step：
Heat the lid so that the top surface and/or it is described go out source aperture in tamper be in molten condition；
Clear up the tamper.
As being further improved for an embodiment of the present invention, step " heats the lid so that the top surface
And/or it is described go out source aperture in tamper be in molten condition " specifically include：
Detect the current state of the MOCVD systems；
When current state is reactiveness, opens temperature control circulation line and regulate and control the lid temperature to reaction temperature；
When current state be cleaning state when, open heat cycles pipeline and make the top surface and/or it is described go out source aperture
Interior tamper is in molten condition.
As being further improved for an embodiment of the present invention, step " clearing up the tamper " specifically includes：
Judge the mode of heating of the lid；
If the lid disassembles and by heater box or heat cycles pipeline heating, blows out tamper；
If the lid is not dismantled and by heat cycles pipeline heating, tamper is sucked out.
Compared with prior art, the beneficial effects of the present invention are：The MOCVD systems of an embodiment of the present invention are by adding
Thermal so that tamper is in molten condition, can simplify subsequent tamper scale removal process, is used to improve MOCVD systems
Efficiency.
Description of the drawings
Fig. 1 is the MOCVD system schematics of the first specific example of an embodiment of the present invention；
Fig. 2 is the MOCVD system schematics of the second specific example of an embodiment of the present invention；
Fig. 3 is the MOCVD cleaned system method and step figures of an embodiment of the present invention.
Specific implementation mode
Below with reference to specific implementation mode shown in the drawings, the present invention will be described in detail.But these embodiments are simultaneously
The present invention is not limited, structure that those skilled in the art are made according to these embodiments, method or functionally
Transformation is included within the scope of protection of the present invention.
In each diagram of the application, for the ease of illustration, structure or partial certain sizes can be relative to other structures
Or part is exaggerated, and therefore, is only used for the basic structure of the theme of diagram the application.
In addition, the term of the representation space relative position used herein such as "upper", " top ", "lower", " lower section " is
A unit as shown in the drawings or feature are described relative to another unit or feature for the purpose convenient for explanation
Relationship.The term of relative space position can be intended to include equipment in use or work other than orientation as shown in the figure not
Same orientation.For example, if the equipment in figure overturn, it is described as being located at other units or feature " below " or " under "
Unit will be located at other units or feature " top ".Therefore, exemplary term " lower section " can include above and below both
Orientation.Equipment can be otherwise directed（It is rotated by 90 ° or other directions）, and be interpreted accordingly it is used herein with it is empty
Between relevant description.
Join Fig. 1, an embodiment of the present invention provides a kind of MOCVD systems 100.
MOCVD systems 100 include reaction unit and heating device 20.
Reaction unit includes reaction cavity, lid 11 etc..
Reaction cavity is for carrying out epitaxial process.
Spray is provided on lid 11 with going out source aperture.
Here, lid 11 is CCS（Close Coupled Showerhead, closely couple spray head）Lid, but not with this
It is limited.
11 surface of lid and/or go out during source aperture inner reaction to be attached with tamper.
Here, putting off with the production time, reaction product or raw material etc. are easy to be attached to 11 surface of lid or blocks out
Source aperture, here, by taking tamper is gallium-indium alloy as an example, the fusing point of gallium-indium alloy is about at 150 DEG C or so, and but not limited to this.
In addition, present embodiment is primarily directed to out the tamper for being difficult to clear up in source aperture, but not limited to this, also may be used
Include the tamper or attachment on 11 surface of lid.
Heating device 20 heats lid 11 and so that tamper is in molten condition.
The MOCVD systems 100 of present embodiment are by heating device 20 so that tamper is in molten condition, after can simplifying
Continuous tamper scale removal process, to improve 100 service efficiency of MOCVD systems.
In the following, introducing several specific examples of the MOCVD systems 100 of present embodiment.
Continue to join Fig. 1, in first specific example, heating device 20a includes the first accommodating chamber for accommodating hot media A1
21a is connected between the first accommodating chamber 21a and lid 11a by heat cycles pipeline S1, and hot media A1 is in heat cycles pipeline S1
Internal circulation flow and heat lid 11a.
Here, lid 11a can form circulation canal so that hot media A1 flows.
Hot media A1 is salting liquid, for example, hot media A1 is inorganic low melting point fused salt（Such as nitrate or other salts）, but
It is not limited.
It, can be by heat conduction fused salt when practical operation（That is hot media A1）It is put into the first accommodating chamber 21a and directly heats melting, or
Person first carries out the melting of heat conduction fused salt in the external of the first accommodating chamber 21a, for example, a small amount of water is added in heat conduction fused salt, and adds
Heat makes heat conduction fused salt melt, and after heat conduction fused salt melts to a certain extent, heat conduction fused salt is put into the first accommodating chamber 21a and is held
Continue heating and makes heat conduction fused salt gradually heats up to reach target temperature.
Then, it when the melting of heat conduction fused salt is enough to recycle in heat cycles pipeline S1 to viscosity, is controlled by circulating pump
Heat conduction fused salt recycles in heat cycles pipeline S1, to realize the heating to lid 11a.
It should be noted that when heat conduction fused salt recycles in heat cycles pipeline S1, it can be with continuous heating heat conduction fused salt
And heat conduction fused salt is allow to continue the smooth outflow in heat cycles pipeline S1.
In this example, the heated perimeter of heating device 20a is 80 DEG C ~ 300 DEG C, so that gallium-indium alloy tamper can be with
Molten condition is presented, but not limited to this, according to different tampers, can select different hot medias.
In addition, after the completion of heating process, hot media A1 can be drawn back as much as possible in the first accommodating chamber 21a, also,
When the temperature of lid 11a is down to about 90 DEG C or less, is flowed with clean hot water circuit and further clear up lid 11a.
MOCVD systems 100a further includes the temperature regulating device 30a for regulating and controlling lid 11a reaction temperatures.
Temperature regulating device 30a is mainly used for regulating and controlling lid 11a temperature, for example, when temperature increases lid 11a during the reaction
When excessive, temperature regulating device 30a is for cooling down lid 11a.
Temperature regulating device 30a include accommodate temperature control media A2 the second accommodating chamber 31a, the second accommodating chamber 31a and lid 11a it
Between be connected to by temperature control circulation line S2, temperature control media A2 adjusts lid 11a's in temperature control circulation line S2 internal circulation flows
Temperature.
Here, temperature control media A2 is water, and but not limited to this.
In this example, ranging from 20 DEG C ~ 100 DEG C of the temperature control of temperature regulating device 30a, preferably, the temperature control of temperature regulating device 30a
Ranging from 60 DEG C ~ 100 DEG C.
It can be seen that the adjustable maximum temperatures of heating device 20a are more than the adjustable maximum temperatures of temperature regulating device 30a,
The utilization scene of both heating device 20a and temperature regulating device 30a is different, and effect is also different.
MOCVD systems 100a further includes control unit, and control unit is for controlling heat cycles pipeline S1 and temperature control cycle
Switching between pipeline S2.
When MOCVD systems 100a is in reaction process（It is in epitaxial process）When, control unit control temperature control follows
Endless tube road S2 is opened, and is controlled heat cycles pipeline S1 and closed, at this point, the reaction temperature of temperature regulating device 30a regulation and control lids 11a；
When MOCVD systems 100a is in scale removal process（That is the tamper accumulated on lid 11a reaches a preset value or MOCVD systems
100a is more than preset time etc. using duration）When, control unit controls heat cycles pipeline S1 and opens, and controls temperature control and follow
Endless tube road S2 is closed, at this point, heating device 20a heats lid 11a and so that tamper is in molten condition.
Specifically, heat cycles pipeline S1 includes the first output heating pipeline S11 for being connected to the first accommodating chamber 21a, first
Input heating pipeline S12 and connection lid 11a second exports heating pipeline S13, the second input heating pipeline S14.
Temperature control circulation line S2 includes the first output temperature control pipeline S21 for being connected to the second accommodating chamber 31a, the first input temperature control
The second output temperature control pipeline S23, the second input temperature control pipeline S24 of pipeline S22 and connection lid 11a.
Second output heating pipeline S13 exports temperature control pipeline S23 with second and integrally turns to lid output pipe S33, and second
The input inputs of heating pipeline S14 and second temperature control pipeline S24 integrally turns to lid intake line S44.
That is, the intake line and efferent duct of heat cycles pipeline S1 and temperature control circulation line S2 common lids 11a
Road.
MOCVD systems 100a further includes the first switch for being separately connected lid output pipe S33 and lid intake line S44
B1 and second switch B2.
When MOCVD systems 100a is in reaction process, control unit controls first switch B1 connection the first output temperature controls
Pipeline S21, and second switch B2 connection the first input temperature control pipeline S22, at this point, the S2 conductings of temperature control circulation line, when MOCVD systems
When system 100a is in scale removal process, control unit controls first switch B1 connection the first output heating pipeline S11, and second switch
B2 connections the first input heating pipeline S12, at this point, the S1 conductings of heat cycles pipeline.
That is, working state control heat cycles pipeline S1 and temperature control of the control unit according to MOCVD systems 100a
Switching between circulation line S2, certainly, also cutting between manually controllable heat cycles pipeline S1 and temperature control circulation line S2
It changes.
In this example, the first output heating pipeline S11, the first input heating pipeline S12 and lid output pipe
S33, lid intake line S44 can be high temperature-resistive pipeline, to adapt to the high temperature hot media A1 flowed in those pipelines.
First output temperature control pipeline S21 and the first input temperature control pipeline S22 can be conventional conduit（That is high temperature resistant degree is less than
Aforementioned high temperature-resistive pipeline）, but not limited to this, first output temperature control pipeline S21 and first input temperature control pipeline S22 be alternatively it is resistance to
High temperature conduit.
In addition, those pipelines can be hose.
In this example, lid 11a includes the first lid 111a, the second lid 112a and positioned at the first lid 111a and the
Thermal insulation layer 113a between two lid 112a.
Here, the first lid 111a is located at the top of the second lid 112a, and thermal insulation layer 113a is thermal isolation film or thermal insulation board etc.,
Thermal insulation layer 113a can be made of polyimides or other heat-barrier materials, and thermal insulation layer 113a not only needs to avoid heat from the second lid
At 112a at conduction to the first lid 111a, also wanting can high temperature resistant（Adapt to the heat that heating device 20a conducts during heating
Amount）.
Specifically, the component of non-refractory is provided at the first lid 111a, such as reflectivity probe etc..
Second lid 112a includes source aperture, and heating device 20a is for heating the second lid 112a.
Here, can form a cavity that source aperture is connected out between the first lid 111a and the second lid 112a, reactant by
Cavity enters in source aperture, and enters in reaction chamber.
In this way, when making tamper be in molten condition when the second lid 112a is heated, the heat of the second lid 112a is not
It can conduct to the first lid 111a, to avoid the component of non-refractory impaired.
In this example, MOCVD systems 100a further includes cleaning plant.
Cleaning plant is suction cleaning plant, when being in molten condition after the tamper heating at lid 11a, due to going out source
Hole aperture is too small（Generally only 0.6mm）, according to micro-porous adsorption principle, tamper will not voluntarily flow out, and be not necessarily to dismantle lid at this time
Directly the tamper of molten condition is sucked out by suction cleaning plant by body 11a, convenient and efficient, and lid 11a is without weight
New assembling.
Certainly, cleaning plant, which is alternatively, blows formula cleaning plant, at this time can disassemble lid 11a, is cleared up using formula is blown
Device from top to bottom blows out tamper.
It should be understood that blow formula cleaning plant be mainly used for cleaning disassemble and tamper be in molten condition lid
11a, suction cleaning plant be mainly used for cleaning be maintained in reaction unit and tamper be in molten condition lid 11a, but not
It, can be depending on actual conditions as limit.
Join Fig. 2, is the schematic diagram of present embodiment second specific example.
For convenience, same or analogous component uses identical title, and uses similar label.
Heating device 20b include accommodate hot media A1 ' the first accommodating chamber 21b, the first accommodating chamber 21b and lid 11b it
Between be connected to by heat cycles pipeline S1 ', hot media A1 ' heats lid 11b in heat cycles pipeline S1 ' internal circulation flows.
Here, when lid 11b needs cleaning, first lid 11b can be disassembled, and by lid 11b and heating device
20b is connected to by heat cycles pipeline S1 ', then so that the tamper at lid 11b is in molten by heating device 20b is heated
Melt state.
Lid 11b and heating device 20b can be directly connected to by heat cycles pipeline S1 ', i.e., lid 11b at this time and heating
Connected state is remained between device 20b, alternatively, being provided with switch on heat cycles pipeline S1 ' to control heat cycles pipe
The opening and closing of road S1 '.
It should be noted that this exemplary lid 11b is directly disassembled and is heated again, and therefore, lid 11b nothings itself
The change in structure need to be made（Increase thermal insulation layer etc. in such as the first example）.
In this example, MOCVD systems 100a further includes cleaning plant.
Cleaning plant is to blow formula cleaning plant, at this point, will be in the lid 11b that disassembled using formula cleaning plant is blown
The tamper of molten condition is blown out from top to bottom.
Certainly, cleaning plant is alternatively suction cleaning plant, can be depending on actual conditions.
In this example, heating device 20b is alternatively heater box, such as nitrogen furnace, at this point, can directly tear lid 11b open
It unloads down and puts into heater box and heat, when the tamper at lid 11b is in molten condition, is cleared up and blocked using cleaning plant
Object.
Other explanations of this exemplary MOCVD systems 100b can refer to first specific example, and details are not described herein.
It should be noted that when MOCVD systems 100 produce a period of time and need to be serviced, lid can be carried out at the same time
The cleaning operation of 11 tamper of stripping operation and lid of other attachments on body 11, while safeguarding raising efficiency, and can protect
Demonstrate,prove the 100 long-term safety production of MOCVD systems.
Join Fig. 3, an embodiment of the present invention also provides a kind of MOCVD cleaned systems method, in conjunction with above-mentioned MOCVD systems
100 explanation, MOCVD systems 100 include lid 11, spray are provided on lid 11 with source aperture is gone out, method for cleaning includes step：
Heat lid 11 so that 11 surface of lid and/or to go out tamper in source aperture be in molten condition；
Clear up tamper.
The MOCVD systems 100 of present embodiment are by heating process so that tamper is in molten condition, after can simplifying
Continuous tamper scale removal process, to improve 100 service efficiency of MOCVD systems.
Wherein, step " heating lid 11 so that 11 surface of lid and/or to go out tamper in source aperture be in molten condition " tool
Body includes：
Detect the current state of MOCVD systems 100；
When current state is reactiveness, opens temperature control circulation line and regulate and control lid temperature to reaction temperature；
When current state is cleaning state, opens heat cycles pipeline and make top surface and/or go out the blocking in source aperture
Object is in molten condition.
Here, with reference to first specific example, " reactiveness " refers to that MOCVD systems 100 are in epitaxial process, this
When, lid 11a reaction temperatures are regulated and controled by temperature control circulation line.
" cleaning state " refers to the use that the tamper accumulated on lid 11 reaches a preset value or MOCVD systems 100
Duration is more than preset time etc., at this point, so that tamper is in molten condition by heat cycles pipeline heating lid 11.
Temperature control circulation line and the controllable switching of heat cycles pipeline.
In addition, step " cleaning tamper " specifically includes：
Judge the mode of heating of lid 11；
If lid 11 disassembles and by heater box or heat cycles pipeline heating, blows out tamper；
If lid 11 is not dismantled and by heat cycles pipeline heating, tamper is sucked out.
That is, the scale removal process of blowout tamper is mainly used for, cleaning disassembles and tamper is in molten condition
Lid 11, be sucked out tamper scale removal process be mainly used for cleaning be maintained in reaction unit and tamper be in molten condition lid
Body 11, but not limited to this, can be depending on actual conditions.
Other explanations of the MOCVD cleaned system methods of present embodiment can refer to saying for above-mentioned MOCVD systems 100
Bright, details are not described herein.
It should be appreciated that although this specification is described in terms of embodiments, but not each embodiment only includes one
A independent technical solution, this description of the specification is merely for the sake of clarity, and those skilled in the art should will say
As a whole, the technical solution in each embodiment may also be suitably combined to form those skilled in the art can for bright book
With the other embodiment of understanding.
The series of detailed descriptions listed above only for the present invention feasible embodiment specifically
Bright, they are all without departing from equivalent implementations made by technical spirit of the present invention not to limit the scope of the invention
Or change should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of MOCVD systems, which is characterized in that including reaction unit and heating device, the reaction unit includes lid, institute
State and be provided with spray on lid with going out source aperture, the top surface and/or it is described go out source aperture inner reaction be attached in the process it is stifled
Plug thing, lid described in the heating devices heat and so that the tamper is in molten condition.
2. MOCVD systems according to claim 1, which is characterized in that the heating device includes accommodate hot media the
One accommodating chamber is added by heat cycles pipeline connection, the hot media in described between first accommodating chamber and the lid
Thermal cycle pipeline internal circulation flow and heat the lid.
3. MOCVD systems according to claim 2, which is characterized in that the MOCVD systems further include described for regulating and controlling
The temperature regulating device and control unit of lid reaction temperature, the temperature regulating device include the second accommodating chamber for accommodating temperature control media, institute
It states and is connected to by temperature control circulation line between the second accommodating chamber and the lid, the temperature control media are in the temperature control circulation line
Internal circulation flow and the temperature for adjusting the lid, described control unit is for controlling the heat cycles pipeline and the temperature control
Switching between circulation line.
4. MOCVD systems according to claim 3, which is characterized in that the heat cycles pipeline includes being connected to described the
First output heating pipeline of one accommodating chamber, the second output heating tube of the first input heating pipeline and the connection lid
Road, the second input heating pipeline, the temperature control circulation line include connection second accommodating chamber the first output temperature control pipeline,
Second output temperature control pipeline of the first input temperature control pipeline and the connection lid, the second input temperature control pipeline, described second
Output heating pipeline with it is described second export temperature control pipeline it is integrated be lid output pipe, it is described second input heating pipeline and
The second input temperature control pipeline integration is lid intake line, and the MOCVD systems further include being separately connected the lid
The first switch and second switch of output pipe and the lid intake line, when the MOCVD systems are in reaction process,
Described control unit controls first switch connection the first output temperature control pipeline, and second switch connection described the
One input temperature control pipeline, when the MOCVD systems are in scale removal process, described control unit controls the first switch connection
The first output heating pipeline, and second switch connection the first input heating pipeline.
5. MOCVD systems according to claim 3, which is characterized in that the lid include the first lid, the second lid and
Thermal insulation layer between first lid and second lid, second lid goes out source aperture including described in, described to add
Thermal is for heating second lid.
6. MOCVD systems according to claim 3, which is characterized in that the heated perimeter of the heating device be 80 DEG C ~
300 DEG C, ranging from 20 DEG C ~ 100 DEG C of the temperature control of the temperature regulating device.
7. MOCVD systems according to claim 1, which is characterized in that the MOCVD systems further include cleaning plant, institute
It is to blow formula cleaning plant or suction cleaning plant to state cleaning plant, it is described blow formula cleaning plant for clear up disassemble and block
Object is in the lid of molten condition, and the suction cleaning plant is maintained at for cleaning in the reaction unit and tamper is in melting
The lid of state.
8. a kind of MOCVD cleaned systems method, which is characterized in that the MOCVD systems include lid, are provided on the lid
For spray with source aperture is gone out, the method for cleaning includes step：
Heat the lid so that the top surface and/or it is described go out source aperture in tamper be in molten condition；
Clear up the tamper.
9. MOCVD cleaned systems method according to claim 8, which is characterized in that step " heat the lid so that
The top surface and/or it is described go out source aperture in tamper be in molten condition " specifically include：
Detect the current state of the MOCVD systems；
When current state is reactiveness, opens temperature control circulation line and regulate and control the lid temperature to reaction temperature；
When current state be cleaning state when, open heat cycles pipeline and make the top surface and/or it is described go out source aperture
Interior tamper is in molten condition.
10. MOCVD cleaned systems method according to claim 8, which is characterized in that step " clearing up the tamper " has
Body includes：
Judge the mode of heating of the lid；
If the lid disassembles and by heater box or heat cycles pipeline heating, blows out tamper；
If the lid is not dismantled and by heat cycles pipeline heating, tamper is sucked out.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810514998.5A CN108588681B (en) | 2018-05-25 | 2018-05-25 | MOCVD system and cleaning method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810514998.5A CN108588681B (en) | 2018-05-25 | 2018-05-25 | MOCVD system and cleaning method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108588681A true CN108588681A (en) | 2018-09-28 |
| CN108588681B CN108588681B (en) | 2020-06-12 |
Family
ID=63629562
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810514998.5A Active CN108588681B (en) | 2018-05-25 | 2018-05-25 | MOCVD system and cleaning method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108588681B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112111727A (en) * | 2019-06-21 | 2020-12-22 | 山东华光光电子股份有限公司 | Method for rapidly recovering MOCVD upper cover after maintenance |
| CN112404022A (en) * | 2020-11-20 | 2021-02-26 | 苏州镓港半导体有限公司 | Method for cleaning graphite disc for MOCVD equipment |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080276957A1 (en) * | 2001-01-22 | 2008-11-13 | Anelva Corporation | Method of cleaning a cvd device |
| CN104328387A (en) * | 2014-11-25 | 2015-02-04 | 聚灿光电科技(苏州)有限公司 | Device for cleaning sprinkler head of vapor deposition device |
| CN106676499A (en) * | 2015-11-06 | 2017-05-17 | 中微半导体设备(上海)有限公司 | Pretreatment method for MOCVD gas spray head |
| CN107190248A (en) * | 2016-03-14 | 2017-09-22 | 株式会社日立国际电气 | Clean method, the manufacture method of semiconductor devices, lining processor and medium |
| CN208328170U (en) * | 2018-05-25 | 2019-01-04 | 聚灿光电科技股份有限公司 | MOCVD system |
-
2018
- 2018-05-25 CN CN201810514998.5A patent/CN108588681B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080276957A1 (en) * | 2001-01-22 | 2008-11-13 | Anelva Corporation | Method of cleaning a cvd device |
| CN104328387A (en) * | 2014-11-25 | 2015-02-04 | 聚灿光电科技(苏州)有限公司 | Device for cleaning sprinkler head of vapor deposition device |
| CN106676499A (en) * | 2015-11-06 | 2017-05-17 | 中微半导体设备(上海)有限公司 | Pretreatment method for MOCVD gas spray head |
| CN107190248A (en) * | 2016-03-14 | 2017-09-22 | 株式会社日立国际电气 | Clean method, the manufacture method of semiconductor devices, lining processor and medium |
| CN208328170U (en) * | 2018-05-25 | 2019-01-04 | 聚灿光电科技股份有限公司 | MOCVD system |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112111727A (en) * | 2019-06-21 | 2020-12-22 | 山东华光光电子股份有限公司 | Method for rapidly recovering MOCVD upper cover after maintenance |
| CN112404022A (en) * | 2020-11-20 | 2021-02-26 | 苏州镓港半导体有限公司 | Method for cleaning graphite disc for MOCVD equipment |
| CN112404022B (en) * | 2020-11-20 | 2022-09-09 | 苏州镓港半导体有限公司 | Method for cleaning graphite disc for MOCVD equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108588681B (en) | 2020-06-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108588681A (en) | MOCVD systems and its method for cleaning | |
| CN102897995B (en) | A kind of silica tube, quartz pushrod continuous induction melting furnace | |
| CN101323972B (en) | Polysilicon directional freezing equipment | |
| RU2011101453A (en) | SYSTEMS AND METHODS OF GROWING SINGLE CRYSTAL SILICON BARS BY DIRECTIONAL CURING | |
| CN208328170U (en) | MOCVD system | |
| CN101319366A (en) | Automatic control system and method for polysilicon ingot furnace | |
| CN111020530B (en) | Chemical vapor deposition furnace with air inlet at two ends | |
| CN104514032A (en) | Thermal field coordination control Czochralski crystal growth furnace | |
| CN106835278A (en) | A kind of crystal growth furnace heater and sapphire crystal growing furnace | |
| CN105154978A (en) | Ggalium arsenide polycrystal magnetic field growing furnace and growing method | |
| CN104532353A (en) | Chromium-doped zinc selenide monocrystal Bridgman growth device and method | |
| CN201862286U (en) | Intelligent multi-temperate zone vacuum sublimation purification device for organic material | |
| CN105648530A (en) | Kyropoulos-process sapphire crystal growth furnace capable of replacing seed crystals on line | |
| CN103160806B (en) | Inlet system, chamber device and substrate processing equipment | |
| CN202247004U (en) | Heat exchange platform with improved structure for polycrystalline silicon ingot furnace | |
| CN202849241U (en) | Quartz tube and quartz bar continuous melting furnace | |
| CN202272988U (en) | Closed cooling system of air refrigeration polycrystalline silicon ingot furnace | |
| CN104328486B (en) | A kind of cooling water pressure closed-loop control system of kyropoulos sapphire crystallization equipment | |
| CN109468439B (en) | Soaking pit device for hot galvanizing coating zone temperature control type alloying annealing treatment and heating control method | |
| CN108193180A (en) | Rotary target material Preparation equipment | |
| CN109778307B (en) | Process control system suitable for monocrystalline silicon horizontal growth mechanism | |
| CN208772039U (en) | Photovoltaic module cleaning device and photovoltaic generating system | |
| CN204281887U (en) | A kind of cooling water pressure closed loop control system of kyropoulos sapphire crystallization equipment | |
| CN208450110U (en) | Crude oil pipeline paraffin removal unit | |
| CN208430227U (en) | A kind of large area heating plate for vacuum cavity |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: Room 01-05, 32nd Floor, Zhongxin Building, 15 Moon Bay Road, Suzhou Industrial Park, Jiangsu Province Applicant after: FOCUS LIGHTINGS TECHNOLOGY CO., LTD. Address before: 215123 Xin Qing Road, Suzhou Industrial Park, Jiangsu Province, No. 8 Applicant before: FOCUS LIGHTINGS TECHNOLOGY CO., LTD. |
|
| CB02 | Change of applicant information | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |