CN108588681B

CN108588681B - MOCVD system and cleaning method thereof

Info

Publication number: CN108588681B
Application number: CN201810514998.5A
Authority: CN
Inventors: 林理亮; 陈伟
Original assignee: Focus Lightings Science & Technology Co ltd
Current assignee: Focus Lightings Science & Technology Co ltd
Priority date: 2018-05-25
Filing date: 2018-05-25
Publication date: 2020-06-12
Anticipated expiration: 2038-05-25
Also published as: CN108588681A

Abstract

The invention discloses an MOCVD system and a cleaning method thereof, wherein the MOCVD system comprises a reaction device and a heating device, the reaction device comprises a cover body, a source outlet hole for spraying is arranged on the cover body, a blocking object is attached to the surface of the cover body and/or the source outlet hole in the reaction process, and the heating device heats the cover body to enable the blocking object to be in a molten state. According to the MOCVD system, the plug is in a molten state through the heating device, so that the subsequent plug cleaning process can be simplified, and the use efficiency of the MOCVD system is improved.

Description

MOCVD system and cleaning method thereof

Technical Field

The invention relates to the field of vapor deposition, in particular to an MOCVD system and a cleaning method thereof.

Background

MOCVD (Metal-Organic Chemical Vapor Deposition) is a new Vapor Phase Epitaxy growth technique developed on the basis of Vapor Phase Epitaxy (VPE). MOCVD is the core equipment for preparing compound semiconductor epitaxial material, takes organic compound of III group and II group elements and hydride of V group and VI group elements as crystal growth source material, carries out gas phase epitaxy on a substrate in a thermal decomposition reaction mode, is mainly used for growing various thin layer single crystal materials of III-V group and II-VI group compound semiconductors and multi-element solid solutions thereof, covers all common semiconductors and has very wide market prospect.

At present, an MOCVD system generally includes a reaction chamber and a lid located above the reaction chamber, wherein the lid is provided with a source outlet for spraying, and a metal organic compound, a hydride, and the like pass through the lid and are sprayed into the reaction chamber at a certain speed.

In the prior art, the cover body is provided with small and dense micro-porous source outlet holes, so that the product quality can be improved, the uniformity is good, the yield is high, however, the source outlet holes are easily blocked by reaction products or raw materials along with the delay of the production time, and particularly, when the source outlet holes for temperature control are blocked, the temperature regulating process is seriously influenced, so that the epitaxial growth process is influenced.

Therefore, along with the delay of the production time, the cover body needs to be disassembled for cleaning, the cleaning process is complicated, the time is long, and the cleaned cover body needs to be assembled to the reaction cavity and then to undergo a long adaptation process, so that various losses are huge in the whole disassembly, reassembly and adaptation period, and how to solve the problems is a subject which needs to be researched by technicians in the field.

Disclosure of Invention

The invention aims to provide an MOCVD system and a cleaning method thereof, which can simplify the cleaning process of a cover body and improve the use efficiency of the MOCVD system.

In order to achieve one of the above objects, an embodiment of the present invention provides an MOCVD system, including a reaction device and a heating device, which are separately disposed, wherein the reaction device includes a cover body, the cover body is provided with a source outlet for spraying, a plug is attached to a surface of the cover body and/or inside the source outlet during a reaction process, the heating device heats the cover body to make the plug in a molten state, the heating device includes a first accommodating cavity for accommodating a heat medium, the first accommodating cavity is communicated with the cover body through a heating circulation pipeline, and the heat medium circulates and flows inside the heating circulation pipeline to heat the cover body.

As a further improvement of an embodiment of the present invention, the MOCVD system further includes a temperature control device and a control unit, the temperature control device is configured to regulate and control a reaction temperature of the lid body, the temperature control device includes a second accommodating cavity configured to accommodate a temperature control medium, the second accommodating cavity is communicated with the lid body through a temperature control circulation pipeline, the temperature control medium circularly flows in the temperature control circulation pipeline to regulate a temperature of the lid body, and the control unit is configured to control switching between the heating circulation pipeline and the temperature control circulation pipeline.

As a further improvement of an embodiment of the present invention, the heating circulation pipeline includes a first output heating pipeline and a first input heating pipeline which are communicated with the first accommodating cavity, and a second output heating pipeline and a second input heating pipeline which are communicated with the lid body, the temperature control circulation pipeline includes a first output temperature control pipeline and a first input temperature control pipeline which are communicated with the second accommodating cavity, and a second output temperature control pipeline and a second input temperature control pipeline which are communicated with the lid body, the second output heating pipeline and the second output temperature control pipeline are integrated into a lid body output pipeline, the second input heating pipeline and the second input temperature control pipeline are integrated into a lid body input pipeline, the MOCVD system further includes a first switch and a second switch which are respectively connected with the lid body output pipeline and the lid body input pipeline, when the MOCVD system is in a reaction process, the control unit controls the first switch to be communicated with the first output temperature control pipeline, the second switch is communicated with the first input temperature control pipeline, and when the MOCVD system is in a cleaning process, the control unit controls the first switch to be communicated with the first output heating pipeline, and the second switch is communicated with the first input heating pipeline.

As a further improvement of the embodiment of the present invention, the cover includes a first cover, a second cover, and a heat insulating layer located between the first cover and the second cover, the second cover includes the source outlet, and the heating device is configured to heat the second cover.

As a further improvement of one embodiment of the invention, the heating range of the heating device is 80-300 ℃, and the temperature control range of the temperature control device is 20-100 ℃.

As a further improvement of an embodiment of the present invention, the MOCVD system further includes a cleaning device, the cleaning device is a blowing cleaning device or a suction cleaning device, the blowing cleaning device is used for cleaning the cover body which is detached and the plug is in a molten state, and the suction cleaning device is used for cleaning the cover body which is held in the reaction device and the plug is in a molten state.

In order to achieve one of the above objects, an embodiment of the present invention provides a method for cleaning an MOCVD system, where the MOCVD system includes a reaction device and a heating device that are separately disposed, the reaction device includes a cover body, and a source outlet for spraying is disposed on the cover body, and the method includes:

heating the cover body to enable the plug on the surface of the cover body and/or in the source hole to be in a molten state;

and clearing the blockage.

As a further improvement of an embodiment of the present invention, the step of "heating the cover body so that the plug on the surface of the cover body and/or in the source hole is in a molten state" specifically includes:

detecting the current state of the MOCVD system;

when the current state is a reaction state, starting a temperature control circulation pipeline to regulate the temperature of the cover body to a reaction temperature;

and when the current state is the cleaning state, starting the heating circulating pipeline to enable the blockage on the surface of the cover body and/or in the source outlet hole to be in a molten state.

As a further improvement of an embodiment of the present invention, the step of "cleaning up the clogging" specifically includes:

judging the heating mode of the cover body;

if the cover body is detached and heated through the heating box or the heating circulating pipeline, the blockage is blown out;

and if the cover body is not detached and is heated through the heating circulating pipeline, sucking out the blockage.

Compared with the prior art, the invention has the beneficial effects that: according to the MOCVD system provided by the embodiment of the invention, the plug is in a molten state through the heating device, so that the subsequent plug cleaning process can be simplified, and the use efficiency of the MOCVD system is improved.

Drawings

Fig. 1 is a schematic view of an MOCVD system of a first specific example of an embodiment of the present invention;

fig. 2 is a schematic view of an MOCVD system according to a second specific example of an embodiment of the present invention;

fig. 3 is a diagram illustrating the steps of a MOCVD system cleaning method according to an embodiment of the present invention.

Detailed Description

The present invention will be described in detail below with reference to specific embodiments shown in the drawings. These embodiments are not intended to limit the present invention, and structural, methodological, or functional changes made by those skilled in the art according to these embodiments are included in the scope of the present invention.

In the various illustrations of the present application, certain dimensions of structures or portions are exaggerated relative to other structures or portions for ease of illustration and, thus, are merely used to illustrate the basic structure of the subject matter of the present application.

Also, terms used herein such as "upper," "above," "lower," "below," and the like, denote relative spatial positions of one element or feature with respect to another element or feature as illustrated in the figures for ease of description. The spatially relative positional terms may be intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary term "below" can encompass both an orientation of above and below. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

Referring to fig. 1, an embodiment of the invention provides an MOCVD system 100.

The MOCVD system 100 includes a reaction device and a heating device 20.

The reaction device comprises a reaction cavity, a cover body 11 and the like.

The reaction chamber is used for carrying out an epitaxial growth process.

The cover body 11 is provided with a source outlet for spraying.

Here, the cover 11 is a CCS (Close Coupled shower head) cover, but not limited thereto.

Plugs are attached to the surface of the cover 11 and/or the source hole during the reaction.

Here, reaction products, raw materials, and the like are liable to adhere to the surface of the lid body 11 or block the source hole as the production time is extended, and here, taking the example of the plug as gallium-indium alloy, the melting point of gallium-indium alloy is about 150 ℃, but not limited thereto.

In addition, the present embodiment mainly addresses the clogging that is difficult to clean in the source hole, but not limited to this, the clogging or the deposit on the surface of the lid body 11 may be included.

The heating device 20 heats the lid body 11 to melt the plug.

The MOCVD system 100 according to the present embodiment makes the plugs in a molten state by the heating device 20, and can simplify the subsequent plug cleaning process, thereby improving the use efficiency of the MOCVD system 100.

Next, several specific examples of the MOCVD system 100 according to the present embodiment will be described.

With continued reference to fig. 1, in the first specific example, the heating device 20a includes a first receiving chamber 21a for receiving the heat medium a1, the first receiving chamber 21a communicates with the lid 11a through a heating circulation line S1, and the heat medium a1 circulates in the heating circulation line S1 to heat the lid 11 a.

Here, the cover 11a may form a circulation passage for the heating medium a1 to flow.

The heat medium A1 is a salt solution, for example, the heat medium A1 is an inorganic low melting point molten salt (such as nitrate or other salts), but not limited thereto.

In practical operation, the heat-conducting molten salt (i.e., the thermal medium a1) may be placed in the first accommodating chamber 21a to be directly heated and melted, or the heat-conducting molten salt may be melted outside the first accommodating chamber 21a, for example, a small amount of water may be added to the heat-conducting molten salt, and the heat-conducting molten salt is heated to melt the heat-conducting molten salt, and after the heat-conducting molten salt is melted to a certain extent, the heat-conducting molten salt is placed in the first accommodating chamber 21a and is continuously heated to gradually raise the temperature of the heat-conducting molten salt to the target temperature.

Then, when the heat-conductive molten salt is melted to a viscosity sufficient to circulate in the heating circulation line S1, the circulation of the heat-conductive molten salt in the heating circulation line S1 is controlled by the circulation pump, thereby heating the lid body 11 a.

It should be noted that, when the heat-conductive molten salt circulates in the heating circulation line S1, the heat-conductive molten salt may be continuously heated so that the heat-conductive molten salt may continuously and smoothly flow in the heating circulation line S1.

In this example, the heating range of the heating device 20a is 80 ℃ to 300 ℃, so that the gallium indium alloy plugs can be in a molten state, but not limited to this, and different heating media can be selected according to different plugs.

In addition, when the heating process is completed, the heating medium a1 may be drawn back into the first receiving chamber 21a as much as possible, and when the temperature of the cover 11a drops below about 90 ℃, the cover 11a is further cleaned with a clean hot water circulation flow.

The MOCVD system 100a further includes a temperature control device 30a for regulating the reaction temperature of the lid 11 a.

The temperature control device 30a is mainly used for controlling the temperature of the cover 11a, for example, when the temperature of the cover 11a is excessively increased during the reaction, the temperature control device 30a is used for cooling the cover 11 a.

The temperature control device 30a includes a second accommodating chamber 31a for accommodating the temperature control medium a2, the second accommodating chamber 31a is communicated with the cover 11a through a temperature control circulation pipeline S2, and the temperature control medium a2 circulates in the temperature control circulation pipeline S2 to regulate the temperature of the cover 11 a.

Here, the temperature control medium a2 is water, but not limited thereto.

In this example, the temperature control range of the temperature control device 30a is 20 ℃ to 100 ℃, and preferably, the temperature control range of the temperature control device 30a is 60 ℃ to 100 ℃.

It can be seen that the adjustable maximum temperature of heating device 20a is greater than the adjustable maximum temperature of temperature control device 30a, and the operating scenarios and functions of heating device 20a and temperature control device 30a are different.

The MOCVD system 100a further includes a control unit for controlling switching between the heating circulation line S1 and the temperature control circulation line S2.

When the MOCVD system 100a is in a reaction process (i.e., in an epitaxial growth process), the control unit controls the temperature control circulation line S2 to be opened, and controls the heating circulation line S1 to be closed, and at this time, the temperature control device 30a controls the reaction temperature of the lid 11 a; when the MOCVD system 100a is in a cleaning process (i.e., the blockage accumulated on the lid 11a reaches a predetermined value or the service life of the MOCVD system 100a exceeds a predetermined time, etc.), the control unit controls the heating circulation line S1 to be opened and controls the temperature-controlled circulation line S2 to be closed, and at this time, the heating device 20a heats the lid 11a to make the blockage in a molten state.

Specifically, the heating circulation line S1 includes a first outlet heating line S11 and a first inlet heating line S12 communicating with the first receiving chamber 21a, and a second outlet heating line S13 and a second inlet heating line S14 communicating with the cover 11 a.

The temperature control circulation pipeline S2 includes a first output temperature control pipeline S21 and a first input temperature control pipeline S22 which are communicated with the second accommodating cavity 31a, and a second output temperature control pipeline S23 and a second input temperature control pipeline S24 which are communicated with the cover 11 a.

The second output heating pipeline S13 and the second output temperature control pipeline S23 are integrated into a cover output pipeline S33, and the second input heating pipeline S14 and the second input temperature control pipeline S24 are integrated into a cover input pipeline S44.

That is, the heating circulation line S1 and the temperature-controlled circulation line S2 share the input line and the output line of the lid 11 a.

The MOCVD system 100a further includes a first switch B1 and a second switch B2 connected to the lid outlet line S33 and the lid inlet line S44, respectively.

When the MOCVD system 100a is in a reaction process, the control unit controls the first switch B1 to be communicated with the first output temperature control pipeline S21, the second switch B2 to be communicated with the first input temperature control pipeline S22, at this time, the temperature control circulation pipeline S2 is conducted, when the MOCVD system 100a is in a cleaning process, the control unit controls the first switch B1 to be communicated with the first output heating pipeline S11, the second switch B2 is communicated with the first input heating pipeline S12, at this time, the heating circulation pipeline S1 is conducted.

That is, the control unit controls the switching between the heating circulation line S1 and the temperature control circulation line S2 according to the operation state of the MOCVD system 100a, and of course, the switching between the heating circulation line S1 and the temperature control circulation line S2 may be manually controlled.

In this example, the first output heater circuit S11, the first input heater circuit S12, the lid output circuit S33, and the lid input circuit S44 may be refractory circuits to accommodate the high temperature heat medium a1 flowing through the circuits.

The first output temperature control pipeline S21 and the first input temperature control pipeline S22 may be conventional pipelines (i.e., the high temperature resistant degree is lower than that of the high temperature resistant pipeline), but not limited thereto, the first output temperature control pipeline S21 and the first input temperature control pipeline S22 may also be high temperature resistant pipelines.

In addition, the pipelines can be hoses.

In this example, the cover 11a includes a first cover 111a, a second cover 112a, and a heat insulating layer 113a between the first cover 111a and the second cover 112 a.

Here, the first cover 111a is located above the second cover 112a, the thermal insulation layer 113a is a thermal insulation film, a thermal insulation board, or the like, the thermal insulation layer 113a may be made of polyimide or other thermal insulation materials, and the thermal insulation layer 113a not only needs to prevent heat from being conducted from the second cover 112a to the first cover 111a, but also needs to be resistant to high temperature (i.e., to accommodate heat conducted by the heating apparatus 20a during heating).

Specifically, a member that does not resist high temperature, such as a reflectance probe, is provided at the first cover 111 a.

The second cover 112a includes a source hole, and the heating device 20a is used to heat the second cover 112 a.

Here, a cavity communicating with the source hole may be formed between the first cover 111a and the second cover 112a, and the reactant enters the source hole from the cavity and enters the reaction chamber.

Thus, when the second cover 112a is heated to make the blocking object in a molten state, the heat of the second cover 112a is not conducted to the first cover 111a, so as to prevent the parts that do not resist high temperature from being damaged.

In this example, the MOCVD system 100a also includes a cleaning device.

Cleaning device is for inhaling formula cleaning device, and when being the molten state after the plug heating of lid 11a department, because the pore diameter of source outlet is too little (generally only 0.6mm), according to micropore adsorption principle, the plug can not flow by oneself, need not to dismantle lid 11a this moment, directly through inhale formula cleaning device with the plug suction of molten state can, convenient and fast, and lid 11a need not to reassemble.

Of course, the cleaning device may also be a blowing type cleaning device, and at this time, the cover body 11a may be detached, and the blockage may be blown out from top to bottom by using the blowing type cleaning device.

It can be understood that the blowing cleaning device is mainly used for cleaning the detached cover 11a with the plug in a molten state, and the suction cleaning device is mainly used for cleaning the cover 11a with the plug in a molten state, but not limited thereto, and may be determined according to practical situations.

Fig. 2 is a schematic diagram of a second specific example of the present embodiment.

For convenience of description, the same or similar components are given the same names and the same reference numerals.

The heating unit 20b includes a first receiving chamber 21b for receiving the heat medium a1 ', the first receiving chamber 21b communicates with the cover 11b through a heating circulation line S1', and the heat medium a1 'circulates in the heating circulation line S1' to heat the cover 11 b.

Here, when the cover 11b needs to be cleaned, the cover 11b may be detached, the cover 11b and the heating device 20b are communicated through the heating circulation line S1', and then heated by the heating device 20b to make the blockage at the cover 11b in a molten state.

The cover 11b and the heating device 20b may be directly connected through the heating circulation line S1 ', i.e. the cover 11b and the heating device 20b are always in a communication state, or a switch is disposed on the heating circulation line S1 ' to control the opening and closing of the heating circulation line S1 '.

It should be noted that the cover 11b of the present example is directly removed for heating, and therefore, the cover 11b itself does not need to be structurally changed (for example, a heat insulating layer is added as in the first example).

In this example, the MOCVD system 100a also includes a cleaning device.

The cleaning device is a blow type cleaning device, and at this time, the plug in the molten state in the detached cover body 11b is blown out from top to bottom by the blow type cleaning device.

Of course, the cleaning device can also be a suction type cleaning device, and can be determined according to actual conditions.

In this example, the heating device 20b may be a heating box, such as a nitrogen gas furnace, in which case the lid 11b may be directly removed and put into the heating box for heating, and when the plug on the lid 11b is in a molten state, the plug may be cleaned by the cleaning device.

For other descriptions of the MOCVD system 100b of the present example, reference may be made to the first specific example, which is not described herein again.

It should be noted that, when the MOCVD system 100 is in production for a period of time and needs maintenance, the operation of scraping off other attachments on the lid 11 and the operation of cleaning the plugs of the lid 11 can be performed simultaneously, and the maintenance improves the efficiency, and the MOCVD system 100 can be ensured to be produced safely for a long time.

Referring to fig. 3, an embodiment of the present invention further provides an MOCVD system cleaning method, and in combination with the description of the MOCVD system 100, the MOCVD system 100 includes a cover 11, the cover 11 is provided with a source outlet for spraying, and the cleaning method includes the steps of:

heating the cover body 11 to enable plugs on the surface of the cover body 11 and/or in the source hole to be in a molten state;

and (6) clearing the blockage.

The MOCVD system 100 according to the present embodiment makes the plugs in a molten state through a heating process, and can simplify a subsequent plug cleaning process, thereby improving the use efficiency of the MOCVD system 100.

The step of heating the cover 11 to make the plugs on the surface of the cover 11 and/or in the source holes in a molten state specifically includes:

detecting the current state of the MOCVD system 100;

when the current state is a reaction state, opening a temperature control circulation pipeline to regulate the temperature of the cover body to a reaction temperature;

when the current state is the cleaning state, the heating circulation pipeline is started to enable the blockage on the surface of the cover body and/or in the source hole to be in a molten state.

Here, referring to the first specific example, the "reaction state" means that the MOCVD system 100 is in the process of epitaxial growth, and at this time, the reaction temperature of the lid 11a is regulated by the temperature control circulation line.

The "cleaning state" refers to a state in which the clogging material accumulated on the lid body 11 reaches a predetermined value or the service life of the MOCVD system 100 exceeds a predetermined time, and the like, and at this time, the lid body 11 is heated by the heating circulation line so that the clogging material is in a molten state.

The temperature control circulation pipeline and the heating circulation pipeline can be controlled to be switched.

In addition, the step of "clearing the blockage" specifically comprises:

judging the heating mode of the cover body 11;

if the cover body 11 is detached and heated by the heating box or the heating circulation pipeline, the blockage is blown out;

if the lid body 11 is not detached and heated by the heating circulation line, the clogging material is sucked out.

That is, the cleaning process of blowing out the blockage is mainly used for cleaning the cover 11 which is detached and the blockage is in a molten state, and the cleaning process of sucking out the blockage is mainly used for cleaning the cover 11 which is kept in the reaction device and the blockage is in a molten state, but the cleaning process is not limited to this, and may be determined according to actual conditions.

For other descriptions of the MOCVD system cleaning method according to this embodiment, reference may be made to the description of the MOCVD system 100, and further description is omitted here.

It should be understood that although the present description refers to embodiments, not every embodiment contains only a single technical solution, and such description is for clarity only, and those skilled in the art should make the description as a whole, and the technical solutions in the embodiments can also be combined appropriately to form other embodiments understood by those skilled in the art.

The above-listed detailed description is only a specific description of a possible embodiment of the present invention, and they are not intended to limit the scope of the present invention, and equivalent embodiments or modifications made without departing from the technical spirit of the present invention should be included in the scope of the present invention.

Claims

1. The utility model provides a MOCVD system, its characterized in that, is including separately set up reaction unit and heating device, reaction unit includes the lid, be provided with on the lid and spray and use the source hole, the lid surface and/or the stopper has been adhered to in the source hole in the reaction process, heating device heats the lid and make the stopper is the molten condition, heating device is including holding the first chamber that holds of hot media, first hold the chamber with communicate through the heating cycle pipeline between the lid, hot media in the heating cycle pipeline inner loop flows and heats the lid.

2. The MOCVD system of claim 1, wherein the MOCVD system further comprises a temperature control device and a control unit for regulating and controlling the reaction temperature of the cover body, the temperature control device comprises a second accommodating cavity for accommodating a temperature control medium, the second accommodating cavity is communicated with the cover body through a temperature control circulation pipeline, the temperature control medium circularly flows in the temperature control circulation pipeline to regulate the temperature of the cover body, and the control unit is used for controlling the switching between the heating circulation pipeline and the temperature control circulation pipeline.

3. The MOCVD system according to claim 2, wherein the heating circulation line comprises a first output heating line and a first input heating line communicated with the first receiving chamber, and a second output heating line and a second input heating line communicated with the lid, the temperature control circulation line comprises a first output temperature control line and a first input temperature control line communicated with the second receiving chamber, and a second output temperature control line and a second input temperature control line communicated with the lid, the second output heating line and the second output temperature control line are integrated into a lid output line, the second input heating line and the second input temperature control line are integrated into a lid input line, the MOCVD system further comprises a first switch and a second switch respectively connected with the lid output line and the lid input line, when the MOCVD system is in a reaction process, the control unit controls the first switch to be communicated with the first output temperature control pipeline, the second switch is communicated with the first input temperature control pipeline, and when the MOCVD system is in a cleaning process, the control unit controls the first switch to be communicated with the first output heating pipeline, and the second switch is communicated with the first input heating pipeline.

4. The MOCVD system according to claim 2, wherein the cover comprises a first cover, a second cover and a heat insulation layer located between the first cover and the second cover, the second cover comprises the source outlet, and the heating device is configured to heat the second cover.

5. The MOCVD system of claim 2, wherein the heating range of the heating device is 80-300 ℃, and the temperature control range of the temperature control device is 20-100 ℃.

6. The MOCVD system according to claim 1, further comprising a cleaning device which is a blow cleaning device for cleaning the detached cover body with the plugs in a molten state or a suction cleaning device for cleaning the cover body with the plugs in a molten state held in the reaction device.

7. A cleaning method of an MOCVD system is characterized in that the MOCVD system comprises a reaction device and a heating device which are separately arranged, the reaction device comprises a cover body, a source outlet hole for spraying is arranged on the cover body, and the cleaning method comprises the following steps:

and clearing the blockage.

8. The MOCVD system cleaning method according to claim 7, wherein the step of heating the cover body to enable the blockage on the surface of the cover body and/or in the source hole to be in a molten state specifically comprises:

detecting the current state of the MOCVD system;

9. The MOCVD system cleaning method according to claim 7, wherein the step of "cleaning the plugs" specifically comprises:

judging the heating mode of the cover body;