CN104962878B - Double shower nozzle MOCVD reative cells - Google Patents
Double shower nozzle MOCVD reative cells Download PDFInfo
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- CN104962878B CN104962878B CN201510324888.9A CN201510324888A CN104962878B CN 104962878 B CN104962878 B CN 104962878B CN 201510324888 A CN201510324888 A CN 201510324888A CN 104962878 B CN104962878 B CN 104962878B
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Abstract
The invention discloses a kind of organic meteorological chemical deposition reative cell of metal, the reative cell includes：Cavity, the cavity includes top plate, bottom plate and side wall, and the top plate bottom plate and side wall surround the chamber of base closed；Upper air spray head, the top being arranged in the reative cell chamber is connected with source of the gas；Lower inlet spray head, the bottom being arranged in the reative cell chamber is connected with source of the gas；Pallet component, is fixedly installed on the middle part in the reaction cavity, and the pallet component includes upper base-tray and lower base-tray, and the upper base-tray and lower base-tray are back to setting, and the upper base-tray is relative with the upper air spray head；The lower base-tray is relative with the lower inlet spray head；Heater, between upper base-tray and lower base-tray.The utilization rate of space availability ratio, gas effciency and heat energy can be effectively improved by this reative cell.
Description
Technical field
The present invention relates to compound semiconductor film depositing device, it is related specifically to prepare the organic of gallium nitride-based semiconductor
The reaction chamber structure of metallochemistry vapour deposition (MOCVD) equipment.
Background technology
Metal organic meteorological chemical deposition (Metal Organic Chemical Vapor Deposition, abbreviation
MOCVD) equipment, for the preparation of the functional structure materials such as gan compound semiconductor, GaAs, indium phosphide, zinc oxide, especially
It is adapted to scale industrial production, therefore the key equipment for producing and studying as current compound semiconductor epitaxial material, is
The Main Means of current production semiconductor photoelectric device and microwave device material, application field is extensive.MOCVD growths are a kind of non-
Balanced growth technology, using with metallic atom such as alkyls organic source reactant (MO sources) and hydride (such as NH3Deng) logical
Cross nitrogen or hydrogen carrier gas is carried in reative cell, under certain pressure, temperature conditionss, extension generation chemical combination is deposited in substrate
Thing semiconductive thin film.
For the production capacity of the organic meteorological chemical deposition equipment of metal, expanded substrate tray area is generally used in the prior art
Mode realize that, however as the increase of base-tray area, the size of reative cell is also increasing, and which increase equipment
The complexity of cost and technology.
The content of the invention
The present invention is based on the demand of prior art and proposed, the technical problem to be solved in the present invention includes carrying
For a kind of organic meteorological chemical deposition equipment of metal, the equipment can improve the organic meteorological chemical deposition equipment of metal production capacity and
Efficiency.
It is anti-there is provided a kind of organic meteorological chemical deposition of metal according to an aspect of the present invention in order to solve the above problems
Room is answered, the reative cell includes：Cavity, the cavity includes top plate, bottom plate and side wall, and the top plate bottom plate and side wall surround base
The chamber of this closing；Upper air spray head, the top being arranged in the reative cell chamber is connected with source of the gas；Lower air inlet spray
Head, the bottom being arranged in the reative cell chamber is connected with source of the gas；Pallet component, the middle part in the reaction cavity,
The pallet component include upper base-tray and lower base-tray, the upper base-tray and lower base-tray back to setting,
The upper base-tray is relative with the upper air spray head；The lower base-tray is relative with the lower inlet spray head；Plus
Hot device, between upper base-tray and lower base-tray.
Preferably, multiple chips are formed with the lower surface of the upper surface of the upper base-tray and the lower base-tray
Bearing groove.
Preferably, the upper base-tray and the setting symmetrical above and below of lower base-tray.
Preferably, the calandria includes resistance heating body, same resistance heating body and the upper base-tray and lower base
The distance between bottom tray is equal.
Preferably, the reative cell also includes chip device for clamping, and the chip device for clamping is arranged on the lower substrate
On pallet；The chip device for clamping includes the flexible projections of the opening inner side positioned at the crystal chip bearing groove, the flexibility
The prominent predetermined distance in the middle part of from protuberance to the crystal chip bearing channel opening.
Preferably, the chamber is shaped as cylindrical shape.
Preferably, the pallet component also includes setting rotating device, the rotating device and the upper base-tray and
Lower base-tray drive connection.
Preferably, independent upper tail gas exhaust outlet and lower tail gas exhaust outlet is respectively equipped with reactor chamber side wall, it is described
Upper tail gas exhaust outlet is relative with the sidepiece of upper base-tray；The lower tail gas exhaust outlet is relative with the lower base-tray.
Preferably, the upper air spray head and lower inlet spray head share source of the gas.
A kind of organic meteorological chemical deposition reative cell equipment of metal, including one are provided according to another aspect of the present invention
Individual or multiple reative cells, wherein at least one in the reative cell is using reative cell as described above described in any one.
A reaction chamber is equipped with two shower nozzles, single spraying head reaction of the capacity efficiency than currently available technology in this patent
Room is significantly improved.In device fabrication cost, i.e., the MOCVD device of same yield, using this technology device fabrication cost significantly
Reduction.In addition, in equipment use cost, because two shower nozzles share a cavity, the total consumption reduction of gas, two substrates
The public heater of pallet, efficiency is doubled, while also ensureing the temperature consistency of heating.
Brief description of the drawings
It is the detailed description to specific embodiment below with reference to accompanying drawing, it will more fully understand present disclosure and spy
Point, wherein：
Fig. 1 is the reaction chamber structure schematic diagram of the organic meteorological chemical deposition equipment of metal in the specific embodiment of the invention.
Fig. 2 is the structural representation of upper air spray head and upper base-tray in the specific embodiment of the invention.
Fig. 3 is lower base-tray partial structural diagram in the specific embodiment of the invention.
Fig. 4 is chip device for clamping partial structural diagram in the specific embodiment of the invention.
Embodiment
Essence for a better understanding of the present invention, it is further to the embodiment work of the present invention below in conjunction with the accompanying drawings
Explanation.But the embodiment is only the citing to optimal technical scheme of the present invention, can not be interpreted as to this hair
The limitation of bright protection domain.
Fig. 1 is the structural representation of the specific embodiment of the invention, it should be appreciated that the accompanying drawing emphasis of the disclosure is shown according to this
The constitutive characteristic of one embodiment of invention, these accompanying drawings are not intended to show each single part in equipment.
Fig. 1 shows a kind of organic meteorological chemical deposition reative cell of metal in the specific embodiment of the invention.Wherein, it is described
Reative cell includes：One reactor chamber 10, the reactor chamber is used for the place for providing reaction and carries other for anti-
The part answered.When entering the organic meteorological chemical deposition reaction of row metal in the cavity, the cavity is suitable to keep set in advance
Environmental condition required for the reaction such as temperature and pressure.Specifically, the reative cell includes top plate, bottom plate and side wall, relies on
The top plate bottom plate and side wall surround the chamber of base closed.Preferably, the reactor chamber 10 is cylindrical shape；Cylindric chamber
Body is easy to close and can reduce the air-flow upset that reacting gas is produced in cavity.
Upper air spray head 21, is arranged at the top in the reactor chamber.Preferably, the upper air spray head is consolidated
Surely it is arranged on the top plate of the reactor chamber, the upper spray head is connected with source of the gas, the source of the gas, which provides metal, to be had
Machine meteorology chemical deposition reacting gas, such as MO sources and hydride NH3, mixed gas, even gas are realized in the spray head, in favor of
Effecting reaction.
Lower inlet spray head 22, is arranged at the bottom in the reactor chamber, it is preferable that the lower inlet spray head is consolidated
Surely it is arranged on the bottom plate of the reactor chamber, the lower spray head is also connected with source of the gas, realizes what source of the gas was provided
Mixed gas, the even gas of the organic meteorological chemical deposition reacting gas of metal.
Preferably, two spray heads share the gas transport module in MOCVD systems, and reaction chamber is previous to be divided into reaching
Two respectively enter upper air spray head 21 and lower inlet spray head 22.The consistent of the parameters such as gas pressure flow can so be ensured
Property, advantageously ensure that above and below the uniformity of epitaxial material is formed on pallet.
One pallet component, is fixedly installed on the middle part in the reaction cavity, and the pallet component includes upper base-tray
31 and lower base-tray 32, the upper base-tray and lower base-tray are oppositely arranged.The upper base-tray 31 with it is described on
Inlet spray head is relative, for carrying the gas reaction that upper spray head 21 is ejected and the chip generated.The lower substrate support
Disk 32 is relative with the lower inlet spray head, for carry the gas reaction that lower spray head 22 is ejected and the chip generated.
The locations of structures of inlet spray head 21 and upper base-tray 31 is as shown in Fig. 2 gas enters from spray head air inlet pipe 211
Enter spray head, be ejected into after spray head mixes the even gas of gas on lower upright corresponding base-tray 31, MO sources and hydride NH3
Reactive deposition generates nitride material in substrate.Similarly, it is possible to understand that the structure of lower inlet spray head 22 and lower base-tray 32
Position and technical process.
Existing reaction cavity inner space can be effectively utilized in this way.Because having in the two directions
Spray head and base-tray, so the capacity efficiency in same reaction cavity space shows than the reative cell of currently available technology
Write and improve.Additionally due to multiple spray heads share a cavity so that the total consumption reduction of gas, Neng Goujie in the cavity
Material saving.
As shown in Figure 2, preferably, multiple crystal chip bearings are formed with the upper base-tray and the lower base-tray
Groove, the multiple crystal chip bearing groove is evenly distributed on the upper base-tray and the lower base-tray.Reacting gas is from spray
After pouring head is directly injected on corresponding base-tray, semi-conducting material is epitaxially formed in the crystal chip bearing groove of base-tray.
By the design of crystal chip bearing groove, predetermined shape and the chip of size can be effectively molded, the quality of production is improved.
Preferably, in the pallet component upper base-tray and lower base-tray in being symmetrical arranged up and down, based on symmetrical
Setting pallet component can be caused higher to utilize superjacent air space and underlying space on the whole.
Upper base-tray 31 is with lower base-tray 32 back to two base-trays are separately positioned on tray support frame 311
On 312.In order to improve, rotating device, the rotating device can also be set on the uniformity of epitaxial material, tray support frame
Drive the upper base-tray and lower base-tray to rotate, the equal of epitaxial material can be effectively improved by the tray design of rotation
Even property.
Preferably for lower base-tray 32, due to lower base-tray crystal chip bearing channel opening down, therefore in lower base
Bottom tray 32 is provided with chip device for clamping 320, prevents the chip in base-tray from falling under gravity.
As shown in figure 3, a kind of chip device for clamping includes, in the opening inner side of the crystal chip bearing groove of the lower base-tray
Flexible protuberance is set, and the flexible projections are to prominent predetermined distance in the middle part of the crystal chip bearing groove.By this
The setting of chip device for clamping, in chip forming process, gas can enter in the crystal chip bearing groove to crystallize into crystalline substance
Piece, after chip is molded into predetermined size and stops spray gas, the protuberance can carry the chip from below and hold
The chip carried in groove makes its unlikely to drop out of described crystal chip bearing groove.
Further, the lower end of the crystal chip bearing groove of the lower base-tray is provided with inside ramp down angle, the chip
Device for clamping 32 includes corner and extension, and the corner is identical with the shape at the ramp down angle, is arranged at the outside at ramp down angle,
Fixed with being supported by the ramp down angle, the extension extends internally from the corner.It is further preferred that the device for clamping
For annular shape, fitted with whole at the opening's edge of the crystal chip bearing groove.The device for clamping 32 can select high-temperature-resistant flexible material
Material, such as rhenium.
By said structure being capable of simply and effectively clamping chip, it is to avoid dropping for chip.And effectively reduce cost.
Further, the pallet component also includes a heater 40, and heater 40 is located at upper base-tray 31 and lower base
Between bottom tray 32.The heater is heated to upper base-tray 31 and lower base-tray 32 simultaneously.Preferably, the heater
It is equal with the distance of the upper base-tray and the lower base-tray, so as to the upper base-tray and the lower base-tray
With identical temperature environment.
The reaction chamber of prior art MOCVD device is base-tray one heater of correspondence, and usual heater is only
Base-tray positioned at its one side is heated, the heat on another direction of heater using upper, and it also requires be equipped with every
The part such as hot plate and cooler pan, to prevent heater hot to the hyperthermia radiation of other parts below, therefore the utilization of heat energy
Efficiency is low.In the embodiment of the present invention same heater can heat simultaneously above and below two base-trays, improve heat utilization rate,
Cost is reduced, and ensure that the temperature consistency of two base-trays, without setting thermal insulation board and cooler pan etc. portion
Part.
As shown in figure 1, the heater 40 is preferably arranged on heater support frame 401, and pass through sealing
Electrode is connected with external powering device.
The heater can be suitable to carry out by the way of heating using any, for example with Resistant heating, using micro-
Wave heating such as infrared heating etc.；Pallet component heating can also can be situated between by liquid or solid by gas medium
The form of matter is heated to the pallet component, pallet component can also be directly heated by way of radiation；All without departing from this
The inventive concept of patent.
Based on the consideration for simplifying structure, the heater 40 used in the embodiment of the present invention is Resistant heating mode.
It is further preferred that the heater also includes temperature-adjusting device, according to condition set in advance control
The working method of heater, the condition set in advance includes but is not limited to the operation of operating personnel, or set in advance
Automatically the event sensed.The working method includes but is not limited to open or stops heater heating, or increase or
Reduce the power of the heater.
In chip generating process, the stabilization of gas has considerable influence, in the present embodiment, be for the quality of chip
The gas that base-tray flows through above and below preventing influences each other the stability of gas, is respectively equipped with solely in the side wall of reactor chamber 10
Tail gas exhaust outlet 51 and lower tail gas exhaust outlet 52 on vertical reative cell.The sidepiece phase of the upper tail gas exhaust outlet and upper base-tray
It is right, it is directed through the gas on base-tray；The lower tail gas exhaust outlet is relative with the lower base-tray, is directed through institute
State the gas on lower base-tray.Tail gas exhaust outlet and lower tail gas exhaust outlet refer to the upper tail gas on the independent reative cell
Exhaust outlet and lower tail gas exhaust outlet are separated out predetermined distance to each other, are separately provided.It so ensure that and flowed through near pallet
Gas airflow stability, so as to improve the quality of production of chip.
Single-chamber room MOCVD yield in currently available technology is difficult to be significantly expanded again, and efficiency comparison is low, and in the prior art
Multi-chamber MOCVD systems, yield substantially increases, but each chamber needs heating, gas circuit matched etc., structure ratio
It is more complicated, it is not notable with raw material utilization ratio on cost reduction, and due to different reaction systems, thermal field, gas,
Uniformity between multiple reative cells such as pressure it is difficult to ensure that, the uniformity of influence differential responses room quality of materials.This is specific real
Apply the design of the single reaction chamber multiple spray header employed in example and overcome disadvantage mentioned above.
Some other process conditions of the present invention are routine techniques technique, belong to model familiar to the person skilled in the art
Farmland, will not be repeated here.Particular embodiments described above, is carried out to the purpose of the present invention, technical scheme and beneficial effect
It is further described, should be understood that the specific embodiment that the foregoing is only the present invention, is not limited to this
Invention, within the spirit and principles of the invention, any modification, equivalent substitution and improvements done etc. should be included in this hair
Within bright protection domain.
Claims (6)
1. a kind of organic meteorological chemical deposition reative cell of metal, it is characterised in that the reative cell includes：
Cavity, the cavity includes top plate, bottom plate and side wall, and the top plate bottom plate and side wall surround the chamber of base closed；
Upper air spray head, the top being arranged in the reative cell chamber is connected with source of the gas；
Lower inlet spray head, the bottom being arranged in the reative cell chamber is connected with source of the gas；
The upper air spray head and lower inlet spray head share source of the gas, in the upper air spray head and the lower air inlet spray
Mixed gas, even gas are realized in head；
Pallet component, the middle part in the reaction cavity；The pallet component includes upper base-tray and lower base-tray,
The upper base-tray and lower base-tray are set back to symmetrical above and below, the upper base-tray and the upper air spray head
Relatively；The lower base-tray is relative with the lower inlet spray head；The pallet component also includes setting rotating device, described
Rotating device and the upper base-tray and lower base-tray drive connection；
Heater, between upper base-tray and lower base-tray, calandria and the upper base-tray and lower base-tray
The distance between it is equal；
In reactor chamber side, wall is respectively equipped with separate upper tail gas exhaust outlet and lower tail gas exhaust outlet, the upper tail gas row
Gas port is relative with the sidepiece of upper base-tray；The lower tail gas exhaust outlet is relative with the lower base-tray.
2. a kind of organic meteorological chemical deposition reative cell of metal according to claim 1, it is characterised in that the upper substrate
Multiple crystal chip bearing grooves are formed with the lower surface of the upper surface of pallet and the lower base-tray.
3. a kind of organic meteorological chemical deposition reative cell of metal according to claim 1, it is characterised in that the calandria
Including resistance heating body.
4. a kind of organic meteorological chemical deposition reative cell of metal according to claim 3, it is characterised in that the reative cell
Also include chip device for clamping, the chip device for clamping is arranged on the lower base-tray；The chip device for clamping bag
The flexible projections of the opening inner side positioned at the crystal chip bearing groove are included, the flexible projections are to the crystal chip bearing channel opening
Middle part protrude predetermined distance.
5. the organic meteorological chemical deposition reative cell of a kind of metal according to claim 1, it is characterised in that the chamber
It is shaped as cylindrical shape.
6. a kind of organic meteorological chemical deposition reative cell equipment of metal, including one or more reative cells；Characterized in that, described
At least one in reative cell is using the reative cell as any one of claim 1-5.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510324888.9A CN104962878B (en) | 2015-06-12 | 2015-06-12 | Double shower nozzle MOCVD reative cells |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510324888.9A CN104962878B (en) | 2015-06-12 | 2015-06-12 | Double shower nozzle MOCVD reative cells |
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| CN104962878A CN104962878A (en) | 2015-10-07 |
| CN104962878B true CN104962878B (en) | 2017-10-20 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107723790B (en) * | 2016-08-12 | 2020-07-07 | 上海新昇半导体科技有限公司 | Epitaxial equipment, equipment manufacturing method and epitaxial method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102094184A (en) * | 2010-09-28 | 2011-06-15 | 常州天合光能有限公司 | PECVD up-and-down simultaneous coating method |
| CN102465280A (en) * | 2010-11-04 | 2012-05-23 | 上海蓝光科技有限公司 | Double-side growth type MOCVD reactor |
| CN202688432U (en) * | 2012-05-22 | 2013-01-23 | 山东力诺太阳能电力股份有限公司 | Crystalline silicon solar battery two-layer coating equipment |
| CN104131266A (en) * | 2013-05-03 | 2014-11-05 | 常州碳维纳米科技有限公司 | Method and analogue device capable of manufacturing thin film material in batches |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0823491B1 (en) * | 1996-08-07 | 2002-02-27 | Concept Systems Design Inc. | Gas injection system for CVD reactors |
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2015
- 2015-06-12 CN CN201510324888.9A patent/CN104962878B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102094184A (en) * | 2010-09-28 | 2011-06-15 | 常州天合光能有限公司 | PECVD up-and-down simultaneous coating method |
| CN102465280A (en) * | 2010-11-04 | 2012-05-23 | 上海蓝光科技有限公司 | Double-side growth type MOCVD reactor |
| CN202688432U (en) * | 2012-05-22 | 2013-01-23 | 山东力诺太阳能电力股份有限公司 | Crystalline silicon solar battery two-layer coating equipment |
| CN104131266A (en) * | 2013-05-03 | 2014-11-05 | 常州碳维纳米科技有限公司 | Method and analogue device capable of manufacturing thin film material in batches |
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Effective date of registration: 20190131 Address after: 046000 Zhangze New Industrial Park, Changzhi High-tech Zone, Changzhi City, Shanxi Province Patentee after: Shanxi Zhongke Luan Ultraviolet Photoelectric Technology Co., Ltd. Address before: Room 708, 7th floor, No. 5 Building, 58 Jinghai Road, Beijing Economic and Technological Development Zone, 100176 Patentee before: BEIJING ZHONGKE YOUWILL TECHNOLOGY CO., LTD. |
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