CN108588652A - Bearing plate, sputtering target and pasting method thereof - Google Patents
Bearing plate, sputtering target and pasting method thereof Download PDFInfo
- Publication number
- CN108588652A CN108588652A CN201810290168.9A CN201810290168A CN108588652A CN 108588652 A CN108588652 A CN 108588652A CN 201810290168 A CN201810290168 A CN 201810290168A CN 108588652 A CN108588652 A CN 108588652A
- Authority
- CN
- China
- Prior art keywords
- binder
- target
- loading plate
- loading
- loading end
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 25
- 238000005477 sputtering target Methods 0.000 title 1
- 239000011230 binding agent Substances 0.000 claims description 70
- 239000000463 material Substances 0.000 claims description 10
- 229910052738 indium Inorganic materials 0.000 claims description 7
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 7
- 239000006061 abrasive grain Substances 0.000 claims description 2
- 238000007788 roughening Methods 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 abstract description 4
- 239000013077 target material Substances 0.000 abstract description 4
- 239000000853 adhesive Substances 0.000 abstract description 3
- 230000001070 adhesive effect Effects 0.000 abstract description 3
- 230000004907 flux Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000004615 ingredient Substances 0.000 description 5
- 230000035515 penetration Effects 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- 244000137852 Petrea volubilis Species 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 3
- 238000005488 sandblasting Methods 0.000 description 3
- 238000005253 cladding Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000008595 infiltration Effects 0.000 description 2
- 238000001764 infiltration Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
Abstract
A bearing plate, a target material for sputtering and a pasting method thereof. The target material pasting method comprises the following steps. First, a carrier plate is provided, wherein the carrier plate has a carrier surface. Then, the bearing surface is roughened, so that the bearing surface has a roughness with a center line average roughness of between 2.5Ra and 7.5 Ra. Then, an adhesive is formed on the roughened carrying surface. Then, the target material is arranged on the adhesive.
Description
Technical field
The present invention relates to a kind of loading plate, sputter target and its method is pasted, and more particularly to a kind of with rough surface
Loading plate, sputter target and its paste method.
Background technology
What it is in traditional sputter target during pasting, between target and loading plate is combined by soft solder flux.So
And soft solder flux is different from the material of loading plate, the associativity often resulted between soft solder flux and loading plate is not high, in turn results in target
It can be easily separated with loading plate.Therefore, in need to propose a kind of technology that increase associativity between soft solder flux and loading plate.
Invention content
Therefore, it is an object of the invention to propose a kind of loading plate, sputter target and its paste method, can improve above-mentioned
Problem of the prior art.
What one embodiment of the invention proposed a kind of sputter target pastes method.The method of pasting of target includes following step
Suddenly.A loading plate is provided, loading plate has a loading end；It is roughened loading end, makes loading end that there is a center line average roughness
Spend the roughness between 2.5Ra and 7.5Ra；A binder is formed on roughened loading end；A target is configured in
On one binder；And heating loading plate, target and binder.
Another embodiment of the present invention proposes a kind of loading plate.Loading plate has one to carry the loading end of a target, holds
Section has roughness of the center line average roughness between 2.5Ra and 7.5Ra.
Another embodiment of the present invention proposes a kind of sputter target.Sputter with target include a loading plate, a binder and
One target；Loading plate has one to carry the loading end of a target, loading end have a center line average roughness between
Roughness between 2.5Ra and 7.5Ra.Binder is formed on roughened loading end.Target is configured on binder, wherein
Binder penetrates into the depth of loading plate between 40 microns and 60 microns.
Below in conjunction with the drawings and specific embodiments, the present invention will be described in detail, but not as a limitation of the invention.
Description of the drawings
Figure 1A~1F is painted pastes procedure chart according to the target of one embodiment of the invention；
Fig. 2 is painted the curve graph of the depth of the ingredient infiltration loading plate of the binder of Fig. 1 F.
Wherein, reference numeral
10：Warm table
20：Target
20b：Paste face
20s、100s：Side
20u：Opposite face
21：Second clad
22：Second binder
100：Loading plate
100’：Target module
100u：Loading end
100b：Setting face
100u1：Target configuring area
110：First clad
120：First binder
120’：Binder
C1~C3：Curve
H1：Depth
R1：Coarse structure
Specific implementation mode
The structural principle and operation principle of the present invention are described in detail below in conjunction with the accompanying drawings：
Figure 1A~1F is please referred to, is painted and pastes procedure chart according to the target of one embodiment of the invention.
As shown in Figure 1A, loading plate 100 is provided, loading plate 100 has at least one side 100s and opposite loading end
100u and setting face 100b, wherein side 100s are extended between setting face 100b and loading end 100u.Loading end 100u has
The target 20 (being illustrated in Fig. 1 E) of one target configuring area 100u1, subsequent technique may be provided in the 100u1 of target configuring area.Such as figure
Shown, loading plate 100 can be arranged with setting face 100b on warm table 10.In addition, the material of loading plate 100 be, for example, copper or its
The excellent material of its heat conduction.
Loading plate 100 is, for example, that can be used for sputtering process (sputter process),.Although figure is not painted, loading plate
100 can have a cooling duct, and coolant, such as water is allowed to pass through, with the cooling loading plate 100 in sputtering process.
As shown in Figure 1B, in one embodiment, it can be selectively formed the complete of the first clad 110 cladding loading plate 100
Portion side 100s and setting face 100b, the first binder 120 that can avoid being subsequently formed pollute side 100s and/or setting face
100b.First clad 110 does not coat loading end 100u, to receive the coating of the first binder 120.In one embodiment,
One clad 110 can covered section loading end 100u, but do not coat target configuring area 100u1.In addition, the first clad 110
Heat-resistant adhesive in this way or heat-resistant film.
As shown in Figure 1 C, it is roughened loading end 100u, loading end 100u is made to form a center line average roughness (center
Line average roughness) coarse structure R1 (being also illustrated in Fig. 1 E) between about 3Ra and about 7Ra, to be formed
One loading plate with rough surface.It is complete that e.g. abrasive machine, sandblasting, sand paper or other appropriate methods can be used in roughened mode
At.For sand paper, coarse structure of the center line average roughness between about 2Ra and about 4Ra can be formed, e.g.
3Ra.For sandblasting, coarse structure of the center line average roughness between about 3.5Ra and between 5.5Ra, example can be formed
4.5Ra in this way.For abrasive machine, coarse knot of the center line average roughness between about 6Ra and about 8Ra can be formed
Structure, e.g. 7Ra.In one embodiment, abrasive machine can be a bending grinding wheel (specification is, for example, AC80).In addition, abrasive machine or
Sand paper can provide abrasive grain of the designation between 80 and 160, be, for example, preferably 120 designations, to form aforementioned surfaces roughness.
In one embodiment, it can be only roughened the target configuring area 100u1 of loading end 100u, right roughened range can also match beyond target
Set the range of area 100u1.
As shown in figure iD, e.g. soft soldering rifle can be used, form the first binder 120 in roughened loading end 100u
On.First binder 120 is, for example, soft solder flux, and material includes or mixtures thereof metals such as indium, tin.As shown, first is glutinous
Mixture 120 is one, and it is back and forth detour type to form path, and so in another embodiment, the first binder 120 may include a plurality of
Strip binder intersected with each other.As long as the first binder 120 can be made to be covered with entire target configuring area in subsequent heating process
100u1, the embodiment of the present invention do not limit the item number of the first binder 120 and/or extend kenel.In addition, the first binder
The 120 coating range substantially range of target configuring area 100u1, after making subsequent heat, the first binder 120 can fill up whole
A or most target configuring area 100u1.
As referring to figure 1E, configuration target 20 is on the first binder 120.The material of target 20 be, for example, aluminium or it is other to
Material of the sputter on workpiece.As shown, target 20 has at least one side 20s and opposite pastes face 20b and opposite face
20u.In configuration target 20 before the first binder 120, all sides of the second clad 21 cladding target 20 can be initially formed
20s and opposite face 20u, but do not coat and paste face 20b, paste face 20b to expose.The material of second clad 21 can be similar or same
In the first clad 110, repeated no more in this；Then, it forms the second binder 22 and pastes face 20b in target 20；Then, right
Connect the second binder 22 of the first binder 120 and target 20 of loading end 100u.In addition, the generation type of the second binder 22
And/or extend kenel and can be similar or be same as the first binder 120, it is repeated no more in this.In addition, the material of the second binder 22 can
It is similar or be same as the first binder 120, it is repeated no more in this.
As shown in fig. 1F, warm table 10 heats the structure of Fig. 1 E, make the second binder 22 and the first binder 120 melt and
It is mixed into binder 120 '.Binder 120 ' fills up the space between loading plate 100 and target 20, and bonding is held after hardening
Support plate 100 and target 20.So far, loading plate 100, target 20, the first binder 120 and the second binder 22 form one for splashing
The target module 100 ' of depositing process.When using the target material structure of Fig. 1 F, the first clad 110 and the second clad can be removed
21。
In addition, in target module 100 ' is for sputtering process, when the consume of target 20 of target module 100 ' extremely needs more
When changing, target module 100 ' can be heated, the binder 120 ' between loading plate 100 and target 20 is allowed to soften or melt, to be easy
Detach the target 20 and loading plate 100 of consume.Later, the target 20 of consume is discardable or recycling, and can be used similar
Or the step of being same as Figure 1A~1C, remaining binder 120 ' on loading plate 100 is removed, coarse structure R1 is formed simultaneously.Then
Fig. 1 D and subsequent step is followed to form new target module 100 '.
The heating temperature of warm table 10 makes second higher than the fusing point of the fusing point and the first binder 120 of the second binder 22
Binder 22 and the first binder 120 melt and generate mobility to fill up the space between target 20 and loading plate 100.So
One, contact area and the binder 120 ' and loading plate 100 between pasting face 20b of binder 120 ' and target 20 can be increased
Loading end 100u between contact area, and then increase target 20 and loading plate 100 associativity.As shown, due to adding
Hot temperature is higher than the fusing point of the fusing point and the first binder 120 of the second binder 22, therefore the second binder 22 and first binds
Between agent 120 almost fusion (because atom fully spread) and without apparent interface.Include for indium, in order to allow indium with binder
The heating temperature of fusing, warm table 10 can be higher than 152 degree Celsius.Right heating temperature can be depending on the ingredient of binder, the present invention
Embodiment does not limit.
As shown in fig. 1F, due to coarse structure R1, the ingredient (such as indium) of binder 120 ' is made to penetrate into the depth of loading plate 100
H1 can be between 40 microns~60 microns.This depth bounds is enough to increase the associativity of loading plate 100 and binder 120 ', makes
Binder 120 ' is not easily separate with loading plate 100.In addition, compared to existing target module, due to sticking for the embodiment of the present invention
The ingredient depth of penetration of mixture 120 ' is deeper, therefore can reduce the dosage of binder 120 ', for example, the first binder of Fig. 1 D
120 coating weight can be reduced and/or the coating weight of the second binder 22 of Fig. 1 E can be reduced.
Fig. 2 is please referred to, the curve of the depth H 1 of ingredient (such as indium) the infiltration loading plate 100 of the binder of Fig. 1 F is painted
Figure.In figure, curve C1 indicates to change with the thick binder depth of penetration made caused by structure that abrasive machine is formed, and curve C2 is indicated
The thick binder depth of penetration variation made caused by structure formed with sandblasting, and curve C3 indicates slightly to make knot with what sand paper was formed
Binder depth of penetration variation caused by structure.As seen from the figure, most deep with the binder depth of penetration H1 caused by abrasive machine, because
This loading plate 100 that coarse structure R1 is formed by using abrasive machine is more not easily separate with binder.
Certainly, the present invention can also have other various embodiments, without deviating from the spirit and substance of the present invention, ripe
It knows those skilled in the art and makes various corresponding change and deformations, but these corresponding changes and change in accordance with the present invention
Shape should all belong to the protection domain of appended claims of the invention.
Claims (10)
1. a kind of sputter target pastes method, which is characterized in that including：
A loading plate is provided, which has a loading end；
It is roughened the loading end, the loading end is made to have a center line average roughness coarse between 2.5Ra and 7.5Ra
Degree；
A binder is formed on the roughened loading end；
A target is configured on the binder；And
Heat the loading plate, the target and the binder.
2. according to claim 1 paste method, which is characterized in that the loading plate has a target configuring area, roughening
The step of loading end includes：
Only it is roughened the target configuring area of the loading end.
3. according to claim 1 paste method, which is characterized in that further include：
It forms one first clad and coats the loading plate, wherein first clad exposes the loading end.
4. according to claim 1 paste method, which is characterized in that be roughened the loading end and completed with abrasive machine.
5. according to claim 4 paste method, which is characterized in that the designation of the abrasive grain of the abrasive machine is between 80 and 160
Between.
6. according to claim 5 paste method, which is characterized in that the binder penetrates into the depth of the loading plate between 40
Between micron and 60 microns.
7. according to claim 6 paste method, which is characterized in that the material of the binder is indium.
8. a kind of loading plate has one to carry the loading end of a target, which has a center line average roughness
Roughness between 2.5Ra and 7.5Ra.
9. a kind of sputter target, which is characterized in that including：
One loading plate has one to carry the loading end of a target, the loading end have a center line average roughness between
Roughness between 2.5Ra and 7.5Ra；
One binder is formed on the roughened loading end；And
One target is configured on the binder, and wherein the binder penetrates into the depth of the loading plate between 40 microns and 60 microns
Between.
10. sputter target according to claim 9, which is characterized in that the material of the binder is indium.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW107107770 | 2018-03-07 | ||
| TW107107770A TWI704246B (en) | 2018-03-07 | 2018-03-07 | Carrier plate, sputtering target and adhering method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108588652A true CN108588652A (en) | 2018-09-28 |
| CN108588652B CN108588652B (en) | 2020-06-12 |
Family
ID=63625336
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810290168.9A Active CN108588652B (en) | 2018-03-07 | 2018-04-03 | Bearing plate, sputtering target and pasting method thereof |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN108588652B (en) |
| TW (1) | TWI704246B (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002030431A (en) * | 2000-07-10 | 2002-01-31 | Tosoh Corp | Sputtering target and manufacturing method |
| US20060266638A1 (en) * | 2005-05-24 | 2006-11-30 | Applied Materials, Inc. | Multiple target tiles with complementary beveled edges forming a slanted gap therebetween |
| CN104690487A (en) * | 2013-12-09 | 2015-06-10 | 有研亿金新材料股份有限公司 | Method for adhesively connecting target and backboard |
| CN104690410A (en) * | 2013-12-05 | 2015-06-10 | 有研亿金新材料股份有限公司 | Preparation method for target material component |
| CN104711525A (en) * | 2013-12-13 | 2015-06-17 | 吉坤日矿日石金属株式会社 | Sputtering target and manufacturing method thereof |
| CN105239044A (en) * | 2014-07-03 | 2016-01-13 | 广欣电能有限公司 | Method for manufacturing target substrate |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6348113B1 (en) * | 1998-11-25 | 2002-02-19 | Cabot Corporation | High purity tantalum, products containing the same, and methods of making the same |
-
2018
- 2018-03-07 TW TW107107770A patent/TWI704246B/en active
- 2018-04-03 CN CN201810290168.9A patent/CN108588652B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002030431A (en) * | 2000-07-10 | 2002-01-31 | Tosoh Corp | Sputtering target and manufacturing method |
| US20060266638A1 (en) * | 2005-05-24 | 2006-11-30 | Applied Materials, Inc. | Multiple target tiles with complementary beveled edges forming a slanted gap therebetween |
| CN104690410A (en) * | 2013-12-05 | 2015-06-10 | 有研亿金新材料股份有限公司 | Preparation method for target material component |
| CN104690487A (en) * | 2013-12-09 | 2015-06-10 | 有研亿金新材料股份有限公司 | Method for adhesively connecting target and backboard |
| CN104711525A (en) * | 2013-12-13 | 2015-06-17 | 吉坤日矿日石金属株式会社 | Sputtering target and manufacturing method thereof |
| CN105239044A (en) * | 2014-07-03 | 2016-01-13 | 广欣电能有限公司 | Method for manufacturing target substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108588652B (en) | 2020-06-12 |
| TWI704246B (en) | 2020-09-11 |
| TW201938826A (en) | 2019-10-01 |
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