CN108559602A - A kind of aqueous diamond wire silicon chip cutting fluid - Google Patents
A kind of aqueous diamond wire silicon chip cutting fluid Download PDFInfo
- Publication number
- CN108559602A CN108559602A CN201810348958.8A CN201810348958A CN108559602A CN 108559602 A CN108559602 A CN 108559602A CN 201810348958 A CN201810348958 A CN 201810348958A CN 108559602 A CN108559602 A CN 108559602A
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- silicon chip
- diamond wire
- cutting fluid
- chip cutting
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- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M173/00—Lubricating compositions containing more than 10% water
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M173/00—Lubricating compositions containing more than 10% water
- C10M173/02—Lubricating compositions containing more than 10% water not containing mineral or fatty oils
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M2207/00—Organic non-macromolecular hydrocarbon compounds containing hydrogen, carbon and oxygen as ingredients in lubricant compositions
- C10M2207/28—Esters
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M2209/00—Organic macromolecular compounds containing oxygen as ingredients in lubricant compositions
- C10M2209/10—Macromolecular compoundss obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
- C10M2209/103—Polyethers, i.e. containing di- or higher polyoxyalkylene groups
- C10M2209/104—Polyethers, i.e. containing di- or higher polyoxyalkylene groups of alkylene oxides containing two carbon atoms only
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M2219/00—Organic non-macromolecular compounds containing sulfur, selenium or tellurium as ingredients in lubricant compositions
- C10M2219/04—Organic non-macromolecular compounds containing sulfur, selenium or tellurium as ingredients in lubricant compositions containing sulfur-to-oxygen bonds, i.e. sulfones, sulfoxides
- C10M2219/044—Sulfonic acids, Derivatives thereof, e.g. neutral salts
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10N—INDEXING SCHEME ASSOCIATED WITH SUBCLASS C10M RELATING TO LUBRICATING COMPOSITIONS
- C10N2030/00—Specified physical or chemical properties which is improved by the additive characterising the lubricating composition, e.g. multifunctional additives
- C10N2030/06—Oiliness; Film-strength; Anti-wear; Resistance to extreme pressure
Abstract
The invention belongs to photovoltaic industry silicon crystal cutting technique field more particularly to a kind of aqueous diamond wire silicon chip cutting fluids.The component of aqueous diamond wire silicon chip cutting fluid includes fatty acid methyl ester, Cithrol 4ML, disecoctylmaleate sodium sulfonate, polyoxyethylene sorbitan monooleate, sodium xylene sulfonate, decynediol polyoxyethylene ether and deionized water, the aqueous diamond wire silicon chip cutting fluid of the present invention with it is excellent lubricate, cool down, silica flour sinking speed it is fast, diamond wire abrasion is small, preparation method is simple for process, condition is easily-controllable, of low cost, low for equipment requirements, is suitable for industrialized production.
Description
Technical field
The invention belongs to photovoltaic industry silicon crystal cutting technique field more particularly to a kind of aqueous diamond wire silicon chip cuttings
Liquid.
Background technology
With the variation of global energy requirements, the energy of clean environment firendly is at popular research topic.Solar energy is both one
The secondary energy, and be regenerative resource.It is resourceful, not only can freely use, but also without transport, to environment without any pollution.For
The mankind create a kind of new lifestyle, and society and the mankind is made to enter the energy saving epoch for reducing pollution.Photovoltaic half
What conductor silicon chip came into being becomes the pillar industry of solar energy, the demand rapid growth to silicon chip.Slice is silicon chip processing
An important procedure, while be also cause silicon chip stress, surface layer and subsurface stratum damage and chipping one of master operation, silicon
Piece cutting yield directly determines the production capacity of photovoltaic industry.And the performance of cutting liquid is to influence the pass of silicon chip cutting efficiency and quality
One of key factor.
The mainly free mortar cutting suspension of use and the Buddha's warrior attendant wire cutting of current silicon chip cutting technique, and boart boart line
Cutting is a kind of more novel cutting technique, and China is still in infancy at present.The technique mainly utilizes sand line outer layer
The diamond being coated with is cut with silicon chip friction, and cutting liquid does not need suspension and carbonation silicon particle, need not also be had higher
Viscosity, silicon carbide blade material need not be mixed into the solution, cutting speed is 2~3 times of steel wire in mortar cutting technique, is gone out
Piece rate is also higher than mortar cutting mode, and the water power of its consumption reduces 2/3rds than mortar cutting technique, is generated after cutting
Silica flour can all recycle use, therefore the depreciation of specific yield, it is artificial will be substantially reduced with energy cost, be both to have saved
It can environmental protection again.
Patent CN102321497A discloses a kind of solar silicon wafers cutting liquid, including polyethylene glycol, surfactant, profit
Lubrication prescription, bleeding agent and chelating agent also include the organic compound with sulfur-to-oxygen double bond.Although the patent better performances, belong to
Traditional free mortar cuts suspension, which has been in filtering technique at present.
Patent 105695076A and 105713714A belong to homologous series product, and more has used the alkane that country is forbidden to use
The surfactants such as base phenol polyethenoxy ether.Although the use of butadiene-styrene rubber in fact accelerates the reunion of silica flour, but bulky grain
Silica flour is sticked to the yield that silicon chip cutting is also reduced on diamond wire.
Silicon chip surface TTV after presently commercially available silicon chip cutting fluid cutting is big, has stria, due to silicon chip meeting in cutting process
Generation brittleness is burst apart or cut, affects the roughness and angularity of silicon chip surface so that the silicon chip overall thickness processed exists
Error.
Diamond wire service life is short, and the additive that many silicon chip cutting fluids use now is of poor quality, is unfavorable for after cutting clearly
It washes, so as to shorten the service life of carborundum line.
Chip silica flour is carefully reacted with water very much due to granularity in silicon chip cutting process can release hydrogen, prolonged production product
It is tired to will produce security risk.
Compare traditional mortar suspension cutting technique and boart boart wire cutting technology, the gold that the latter's sand line outer layer is coated with
The frictional force that the friction of hard rock and silicon chip generates is high more than mortar suspension, and when cutting generates moment stronger high temperature, cooling effect
Decline, silica flour settleability are bad, and which results in the silicon chip surfaces after cutting can difficult cleaning of solid silicon fine powder, to
Keep the decline of product smoothness, yield low.
Invention content
Technical problem to be solved by the present invention lies in：Under the premise of traditional mortar suspension cutting liquid is eliminated, carry
For a kind of cutting liquid of boart boart wire cutting silicon chip, solution cutting speed is slow, and silica flour settleability is poor, the low technology of silicon chip yield
Problem.
In order to solve the above technical problems, the technical solution adopted by the present invention is：A kind of aqueous diamond wire silicon chip cutting is provided
Liquid, component include fatty acid methyl ester, Cithrol 4ML, disecoctylmaleate sodium sulfonate, polyoxy second
Alkene Sorbitan Monooleate, sodium xylene sulfonate, decynediol polyoxyethylene ether and deionized water.
Specifically, it includes following each component that above-mentioned aqueous diamond wire silicon chip cutting fluid is counted in parts by weight：Fatty acid methyl
5-10 parts of ester, 8-15 parts of Cithrol 4ML, 5-10 parts of disecoctylmaleate sodium sulfonate, polyoxyethylene
2-5 parts of Sorbitan Monooleate, 0.1-1 parts of sodium xylene sulfonate, 1-5 parts of decynediol polyoxyethylene ether and deionized water
60-80 parts.
Further, it includes that following each component is preferably that aqueous diamond wire silicon chip cutting fluid is counted in parts by weight：Aliphatic acid
8 parts of methyl esters, 10 parts of Cithrol 4ML, 5 parts of disecoctylmaleate sodium sulfonate, polyoxyethylene mountain
70 parts of 4 parts of pears alcohol monoleate, 0.5 part of sodium xylene sulfonate, 2.5 parts of decynediol polyoxyethylene ether and deionized water.
Wherein, fatty acid methyl ester has outstanding wear resistence and thermal stability, in the present invention the μ of anti-wear index WS1.4≤300
M (60 DEG C) shows to can significantly reduce frictional force under the conditions of high temperature friction have good antifriction antiwear greasy property.Poly- second
400 monolaurate of glycol have emulsification, lubrication, defoaming, characteristic of solubilizing, especially can tightly lock fatty acid methyl ester regardless of
Layer ensures fatty acid methyl ester dehydration, promotes the stability of system.Disecoctylmaleate sodium sulfonate, polyoxyethylene are de-
There is water sorbitol monooleate potent wetability, energy rapid osmotic can lock system to diamond wire and silicon chip contact surface
Other hydrophilic lipophilic groups are aligned in the surface energy of solution, are accelerated cutting speed and are taken away amount of heat.Xylene monosulfonic acid
Sodium has the effects that sterilization, hydrotropic, homogenizing, dispersion in the present invention, and cloud point, viscosity is made to decline, and substantially increases and cuts
The cooling effect of liquid is cut, also has the effect for sharpening diamond dust in the present invention, improves cutting efficiency.Decynediol polyoxyethylene ether
With unique bimolecular based structures, it is suitable for the suds wetting agent of aqueous systems, greatly improves system of the present invention to various silicon
The dynamic moisture ability static state and dynamic surface tension of piece and diamond wire are low, promote flowing levelling, reduce silica flour and are drawn to silicon chip
Wound.And the silica flour sinking speed that can improve system, quickly takes away the silica flour generated in cutting process, is that silica flour and cutting liquid are fast
Speed is separated by solid-liquid separation, and the performance of guarantee system does not fluctuate for a long time.
The present invention also provides a kind of preparation methods of above-mentioned aqueous diamond wire silicon chip cutting fluid：By fatty acid methyl ester, gather
400 monolaurate of ethylene glycol, disecoctylmaleate sodium sulfonate, polyoxyethylene sorbitan monooleate, decine
Glycol polyoxyethylene ether is added to agitator tank and stirs evenly, and is then slowly added to deionized water while stirring, obtains transparency emulsion,
It is eventually adding sodium xylene sulfonate and stirs evenly and obtain aqueous diamond wire silicon chip cutting fluid.
The beneficial effects of the present invention are：The aqueous diamond wire silicon chip cutting fluid of the present invention, with it is excellent lubricate, it is cold
But, silica flour settlement action, by the way that, by the combination of each raw material, silicon chip cutting speed is fast in formula, silicon chip yield is high, silicon chip
Surface silica flour residual is few, and diamond wire abrasion is small.And the aqueous diamond wire silicon chip cutting fluid preparation method is simple for process, condition is easy
It controls, is of low cost, low for equipment requirements, being suitable for industrialized production.
Specific implementation mode
Embodiment 1
A kind of aqueous diamond wire silicon chip cutting fluid is in parts by weight following each component：8 parts of fatty acid methyl ester gathers
10 parts of 400 monolaurate of ethylene glycol, 5 parts of disecoctylmaleate sodium sulfonate, polyethenoxy sorbitan list oleic acid
70 parts of 4 parts of ester, 0.5 part of sodium xylene sulfonate, 2.5 parts of decynediol polyoxyethylene ether and deionized water.
The preparation method of aqueous diamond wire silicon chip cutting fluid in the present embodiment is：
By fatty acid methyl ester, Cithrol 4ML, disecoctylmaleate sodium sulfonate, polyoxyethylene
Sorbitan Monooleate, decynediol polyoxyethylene ether are added to agitator tank and stir evenly, and then slowly add while stirring
Enter deionized water, obtain translucent lotion, is eventually adding sodium xylene sulfonate and stirs evenly and obtain aqueous diamond wire silicon chip and cut
Cut liquid.
Embodiment 2
A kind of aqueous diamond wire silicon chip cutting fluid is in parts by weight following each component：
10 parts of fatty acid methyl ester, 8 parts of Cithrol 4ML, 5 parts of disecoctylmaleate sodium sulfonate,
5 parts of polyoxyethylene sorbitan monooleate, 1 part of sodium xylene sulfonate, 5 parts of decynediol polyoxyethylene ether and deionized water
66 parts.
The preparation method of aqueous diamond wire silicon chip cutting fluid in the present embodiment is：
By fatty acid methyl ester, Cithrol 4ML, disecoctylmaleate sodium sulfonate, polyoxyethylene
Sorbitan Monooleate, decynediol polyoxyethylene ether are added to agitator tank and stir evenly, and then slowly add while stirring
Enter deionized water, obtain translucent lotion, is eventually adding sodium xylene sulfonate and stirs evenly and obtain aqueous diamond wire silicon chip and cut
Cut liquid.
Embodiment 3
5 parts of fatty acid methyl ester, 15 parts of Cithrol 4ML, 10 parts of disecoctylmaleate sodium sulfonate,
2 parts of polyoxyethylene sorbitan monooleate, 0.1 part of sodium xylene sulfonate, 1 part of decynediol polyoxyethylene ether and deionization
66.9 parts of water.
The preparation method of aqueous diamond wire silicon chip cutting fluid in the present embodiment is：
By fatty acid methyl ester, Cithrol 4ML, disecoctylmaleate sodium sulfonate, polyoxyethylene
Sorbitan Monooleate, decynediol polyoxyethylene ether are added to agitator tank and stir evenly, and then slowly add while stirring
Enter deionized water, obtain translucent lotion, is eventually adding sodium xylene sulfonate and stirs evenly and obtain aqueous diamond wire silicon chip and cut
Cut liquid.
After the cutting liquid of the various embodiments described above is diluted 400 times with deionized water respectively, the silicon rod of same specification is carried out
Boart boart wire cutting, while imported from America UDML200C solar silicon wafers cutting liquid (label A) is equally diluted with deionized water
After 400 times, boart boart wire cutting is carried out to the silicon rod of same specification, and produce using Liaoning AoKe Chemical Co., Ltd
Mortar suspension cutting liquid (label B) suspended cutting using traditional mortar to the silicon rod of same specification.Related experiment result such as table 1
It is shown：
Table 1, the embodiment of the present invention and comparative example cutting data test table
Obtained by table 1, the various aspects embodiment of the present invention will be better than traditional mortar suspension cutting liquid, each performance indicator with
Import Buddha's warrior attendant wire cutting liquid is suitable.
Finally, it should be noted that the above embodiments are only the preferred technical solution of the present invention, and be not construed as
The limitation of the present invention, the features in the embodiments and the embodiments of the present application in the absence of conflict, can mutually arbitrary group
It closes.Skill in the technical solution that protection scope of the present invention should be recorded with claim, including the technical solution of claim record
The equivalents of art feature are protection domain.Equivalent replacement i.e. within this range is improved, also in the protection model of the present invention
Within enclosing.
Claims (4)
1. a kind of aqueous diamond wire silicon chip cutting fluid, it is characterised in that：The group subpackage of the aqueous diamond wire silicon chip cutting fluid
Include fatty acid methyl ester, Cithrol 4ML, disecoctylmaleate sodium sulfonate, Polyoxyethylene sorbitan
Alcohol monoleate, sodium xylene sulfonate, decynediol polyoxyethylene ether and deionized water.
2. aqueous diamond wire silicon chip cutting fluid as described in claim 1, it is characterised in that：The aqueous diamond wire silicon chip is cut
It includes following each component to cut liquid and count in parts by weight：5-10 parts of fatty acid methyl ester, 8-15 parts of Cithrol 4ML,
5-10 parts of disecoctylmaleate sodium sulfonate, 2-5 parts of polyoxyethylene sorbitan monooleate, sodium xylene sulfonate
60-80 parts of 0.1-1 parts, 1-5 parts of decynediol polyoxyethylene ether and deionized water.
3. the aqueous diamond wire silicon chip cutting fluid according to claim 2, it is characterised in that：The aqueous Buddha's warrior attendant
It includes that following each component is preferably that line silicon chip cutting fluid is counted in parts by weight：8 parts of fatty acid methyl ester, polyethylene glycol 400 list bay
10 parts of acid esters, 5 parts of disecoctylmaleate sodium sulfonate, 4 parts of polyoxyethylene sorbitan monooleate, xylene monosulfonic acid
70 parts of 0.5 part of sodium, 2.5 parts of decynediol polyoxyethylene ether and deionized water.
4. the preparation method of the aqueous diamond wire silicon chip cutting fluid as described in claim 1-3, it is characterised in that：The preparation side
Method is：By fatty acid methyl ester, Cithrol 4ML, disecoctylmaleate sodium sulfonate, polyoxyethylene
Sorbitol monooleate, decynediol polyoxyethylene ether are added to agitator tank and stir evenly, and are then slowly added to while stirring
Ionized water obtains transparency emulsion, is eventually adding sodium xylene sulfonate and stirs evenly and obtains aqueous diamond wire silicon chip cutting fluid.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810348958.8A CN108559602B (en) | 2018-04-18 | 2018-04-18 | Water-based diamond wire silicon wafer cutting fluid |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810348958.8A CN108559602B (en) | 2018-04-18 | 2018-04-18 | Water-based diamond wire silicon wafer cutting fluid |
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| CN108559602A true CN108559602A (en) | 2018-09-21 |
| CN108559602B CN108559602B (en) | 2020-12-11 |
Family
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109370760A (en) * | 2018-11-09 | 2019-02-22 | 上海都昱新材料科技有限公司 | High lubrication highly diluted multiplying power Buddha's warrior attendant wire cutting liquid and preparation method thereof |
| CN110791363A (en) * | 2019-09-27 | 2020-02-14 | 佳化化学(上海)有限公司 | Fully synthetic cutting fluid and preparation method thereof |
| CN111254002A (en) * | 2018-11-30 | 2020-06-09 | 洛阳阿特斯光伏科技有限公司 | Cooling liquid used in cutting process and preparation method and application thereof |
| CN111635809A (en) * | 2020-06-16 | 2020-09-08 | 西安思凯石化科技有限公司 | Water-soluble metal multi-wire cutting fluid |
| CN113136255A (en) * | 2020-01-16 | 2021-07-20 | 天津赫普菲乐新材料有限公司 | Cooling liquid for diamond wire cutting solar silicon wafer and preparation method |
| CN113430041A (en) * | 2021-06-28 | 2021-09-24 | 广州亦盛环保科技有限公司 | Water-based semiconductor wafer cutting fluid and preparation method thereof |
| CN113736550A (en) * | 2021-09-02 | 2021-12-03 | 江苏捷捷半导体新材料有限公司 | Diamond wire cutting fluid for circulating system of slicing equipment and preparation method of diamond wire cutting fluid |
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| CN113136255A (en) * | 2020-01-16 | 2021-07-20 | 天津赫普菲乐新材料有限公司 | Cooling liquid for diamond wire cutting solar silicon wafer and preparation method |
| CN111635809A (en) * | 2020-06-16 | 2020-09-08 | 西安思凯石化科技有限公司 | Water-soluble metal multi-wire cutting fluid |
| CN113430041A (en) * | 2021-06-28 | 2021-09-24 | 广州亦盛环保科技有限公司 | Water-based semiconductor wafer cutting fluid and preparation method thereof |
| CN113736550A (en) * | 2021-09-02 | 2021-12-03 | 江苏捷捷半导体新材料有限公司 | Diamond wire cutting fluid for circulating system of slicing equipment and preparation method of diamond wire cutting fluid |
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| CN108559602B (en) | 2020-12-11 |
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