CN108546160A - A kind of ceramic base circuit and preparation method thereof - Google Patents
A kind of ceramic base circuit and preparation method thereof Download PDFInfo
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- CN108546160A CN108546160A CN201810617688.6A CN201810617688A CN108546160A CN 108546160 A CN108546160 A CN 108546160A CN 201810617688 A CN201810617688 A CN 201810617688A CN 108546160 A CN108546160 A CN 108546160A
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- China
- Prior art keywords
- ceramic
- ceramic base
- base circuit
- liquid metal
- circuit
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Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 120
- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- 229910001338 liquidmetal Inorganic materials 0.000 claims abstract description 54
- 239000013528 metallic particle Substances 0.000 claims abstract description 25
- 229910052751 metal Inorganic materials 0.000 claims abstract description 23
- 239000002184 metal Substances 0.000 claims abstract description 23
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052802 copper Inorganic materials 0.000 claims abstract description 11
- 239000010949 copper Substances 0.000 claims abstract description 11
- 230000001680 brushing effect Effects 0.000 claims abstract description 7
- 238000005245 sintering Methods 0.000 claims abstract description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 27
- 229910052733 gallium Inorganic materials 0.000 claims description 27
- 229910045601 alloy Inorganic materials 0.000 claims description 20
- 239000000956 alloy Substances 0.000 claims description 20
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 18
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 14
- 239000000126 substance Substances 0.000 claims description 14
- 239000012530 fluid Substances 0.000 claims description 9
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 7
- 239000004411 aluminium Substances 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 235000015895 biscuits Nutrition 0.000 claims description 7
- 239000004927 clay Substances 0.000 claims description 7
- 239000002131 composite material Substances 0.000 claims description 7
- 229910052742 iron Inorganic materials 0.000 claims description 7
- 229910052725 zinc Inorganic materials 0.000 claims description 7
- 239000011701 zinc Substances 0.000 claims description 7
- 238000002844 melting Methods 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 229910021332 silicide Inorganic materials 0.000 claims description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 4
- 239000005995 Aluminium silicate Substances 0.000 claims description 3
- 235000012211 aluminium silicate Nutrition 0.000 claims description 3
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 239000000843 powder Substances 0.000 claims description 2
- 229910001092 metal group alloy Inorganic materials 0.000 claims 2
- 239000004020 conductor Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 14
- 238000000034 method Methods 0.000 abstract description 10
- 229910052737 gold Inorganic materials 0.000 abstract description 9
- 239000010931 gold Substances 0.000 abstract description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 7
- 239000002905 metal composite material Substances 0.000 abstract description 6
- 229910052709 silver Inorganic materials 0.000 abstract description 6
- 239000004332 silver Substances 0.000 abstract description 6
- 150000002739 metals Chemical class 0.000 abstract description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052738 indium Inorganic materials 0.000 description 13
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 13
- 239000007788 liquid Substances 0.000 description 12
- 229910001369 Brass Inorganic materials 0.000 description 8
- 229910001128 Sn alloy Inorganic materials 0.000 description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 8
- MPZNMEBSWMRGFG-UHFFFAOYSA-N bismuth indium Chemical compound [In].[Bi] MPZNMEBSWMRGFG-UHFFFAOYSA-N 0.000 description 8
- 239000010951 brass Substances 0.000 description 8
- 229910000846 In alloy Inorganic materials 0.000 description 7
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 6
- 229910052797 bismuth Inorganic materials 0.000 description 6
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229910052718 tin Inorganic materials 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 5
- 229910010293 ceramic material Inorganic materials 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- YZZNJYQZJKSEER-UHFFFAOYSA-N gallium tin Chemical compound [Ga].[Sn] YZZNJYQZJKSEER-UHFFFAOYSA-N 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 229910000925 Cd alloy Inorganic materials 0.000 description 4
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 4
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 4
- 229910052753 mercury Inorganic materials 0.000 description 4
- 238000007711 solidification Methods 0.000 description 4
- 230000008023 solidification Effects 0.000 description 4
- 238000001723 curing Methods 0.000 description 3
- 235000019441 ethanol Nutrition 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- -1 metals compound Chemical class 0.000 description 3
- 238000010146 3D printing Methods 0.000 description 2
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- 229910001074 Lay pewter Inorganic materials 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- PQIJHIWFHSVPMH-UHFFFAOYSA-N [Cu].[Ag].[Sn] Chemical compound [Cu].[Ag].[Sn] PQIJHIWFHSVPMH-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000011157 advanced composite material Substances 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- 230000003064 anti-oxidating effect Effects 0.000 description 2
- JWVAUCBYEDDGAD-UHFFFAOYSA-N bismuth tin Chemical compound [Sn].[Bi] JWVAUCBYEDDGAD-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 235000011187 glycerol Nutrition 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 2
- 239000002082 metal nanoparticle Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 2
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 2
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 239000011591 potassium Substances 0.000 description 2
- 235000013772 propylene glycol Nutrition 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229920005573 silicon-containing polymer Polymers 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 229910000648 terne Inorganic materials 0.000 description 2
- 229910000969 tin-silver-copper Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 2
- 229910004369 ThO2 Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000004421 molding of ceramic Methods 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- ZCUFMDLYAMJYST-UHFFFAOYSA-N thorium dioxide Chemical compound O=[Th]=O ZCUFMDLYAMJYST-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/89—Coating or impregnation for obtaining at least two superposed coatings having different compositions
- C04B41/90—Coating or impregnation for obtaining at least two superposed coatings having different compositions at least one coating being a metal
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/52—Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
A kind of ceramic base circuit and preparation method thereof, the method, including：Ceramic mud is prepared into required shape by step 1, as ceramic bases；Step 2 is blended with the liquid metal of metallic particles with certain circuit pattern brushing on the surface of the ceramic bases, forms conducting wire；Step 3, the conducting wire glazing that the ceramic bases and its surface are formed；Step 4, sintering curing form the ceramic base circuit.The fusing point of the liquid metal used in the present invention is substantially at 300 DEG C or less, for the metals such as gold, silver, copper compared to the thousands of degree of fusing point, ceramic-metal composites are prepared using liquid metal, production equipment and corollary equipment requirement are low, improve the safety of production.
Description
Technical field
The invention belongs to advanced composite material (ACM) technical fields more particularly to a kind of ceramic base circuit and preparation method thereof.
Background technology
Ceramic material is a kind of material being all used widely in daily life and industrial circle, such as tableware, wine
Tool, cooling fin, protective materials etc..The composite construction of ceramics and other materials is also widely used, in numerous ceramic bases
In composite material, ceramic-metal composite material is current one of a kind of complex of greatest concern, and what may be had is highly thermally conductive
Rate, high intensity, electric conductivity and application in semiconductor processing have attracted the concern of numerous researchers.Current most of potteries
Porcelain-metallic composite contributes to field of industrial production, there are no being related to too much in traditional art, Household ceramic, separately
In outer preparation method it is mostly be by doping metals compound or metallic particles in special cermacis, formed uniform composite construction or
It is that metal layer is formed in ceramic surface by gas phase or chemical deposition, metal used is more in existing ceramic-metal composite material
Application for the noble metals such as copper, silver, gold, other metals is still rare, and this preparation method often has technological level higher
Requirement, also have prodigious limitation on production cost and convenience.
Invention content
In view of this, it is an object of the invention to propose a kind of preparation method of ceramic base circuit, to reduce existing skill
The Preparation equipment of ceramic-metal composite material and the requirement of environment is prepared in art.
In some illustrative embodiments, the preparation method of the ceramic base circuit, including：Step 1, will ceramics it is clay standby
At required shape, as ceramic bases；Step 2 is blended with the liquid metal of metallic particles with certain circuit pattern brushing
On the surface of the ceramic bases, conducting wire is formed；Step 3, the conducting wire that the ceramic bases and its surface are formed
Glazing；Step 4, sintering curing form the ceramic base circuit.
In some optionally embodiment, there is certain electricity in the step 1 on the surface of ceramic bases obtained
The groove of road pattern；It is filled into the groove in the step 2 by being blended with the liquid metal of metallic particles, forms institute
State conducting wire.
In some optionally embodiment, further include in the step 2：Electronics member is set in the conducting wire of formation
Part forms functional circuit.
In some optionally embodiment, the preparation method further includes：Using the ceramic base circuit of formation as pottery
Porcelain substrate is repeated at least once more step 2-4, forms ceramic base compound circuit.
It is another object of the present invention to propose a kind of ceramic base circuit.
In some illustrative embodiments, the ceramic base circuit, including：Ceramic bases；It is arranged in the ceramic bases
On functional circuit；Wherein, the functional circuit includes the conducting wire and/or electronic component in certain circuit pattern；Institute
It states in conducting wire and at least there is partially electronically conductive circuit and be made of liquid metal；Cover the functional circuit surface or covering institute
State functional circuit and the ceramic glaze on ceramic bases surface.
In some optionally embodiment, metallic particles is mixed in the liquid metal.
In some optionally embodiment, the metallic particles includes at least one of nickel, iron, copper, zinc, aluminium.
In some optionally embodiment, the liquid metal includes：Gallium simple substance and gallium-base alloy.
In some optionally embodiment, the groove for accommodating the liquid metal is offered on the ceramic bases surface,
Liquid metal in the groove constitutes the conducting wire or the part conducting wire.
In some optionally embodiment, the ceramic bases include：Biscuit of ceramics, glazed ceramics and ceramic base electricity
One kind in road.
In some optionally embodiment, the main component of the biscuit of ceramics includes：Clay, kaolin, metal oxidation
At least one of object, carbide, boride, nitride and silicide.
Compared with prior art, the present invention has following advantage：
The fusing point of the liquid metal used in the present invention substantially at 300 DEG C hereinafter, compared to the thousands of degree of fusing point gold, silver,
For the metals such as copper, ceramic-metal composite material is prepared using liquid metal, production equipment and corollary equipment requirement are low, carry
The high safety of production.
Description of the drawings
Fig. 1 is the flow chart of the preparation method of ceramic base circuit in the embodiment of the present invention；
Fig. 2 is the flow chart of the preferred preparation method of ceramic base circuit in the embodiment of the present invention；
Fig. 3 is the structural schematic diagram of ceramic base circuit in the embodiment of the present invention；
Fig. 4 is the structural schematic diagram of ceramic base compound circuit in the embodiment of the present invention.
Specific implementation mode
The following description and drawings fully show specific embodiments of the present invention, to enable those skilled in the art to
Put into practice them.Other embodiments may include structure, logic, it is electrical, process and other change.Embodiment
Only represent possible variation.Unless explicitly requested, otherwise individual components and functionality is optional, and the sequence operated can be with
Variation.The part of some embodiments and feature can be included in or replace part and the feature of other embodiments.This hair
The range of bright embodiment includes equivalent obtained by the entire scope of claims and all of claims
Object.Herein, these embodiments of the invention can individually or generally be indicated that this is only with term " invention "
For convenience, it and if in fact disclosing the invention more than one, is not meant to automatically limit ranging from appointing for the application
What single invention or inventive concept.
Such as Fig. 1, the invention discloses a kind of preparation methods of ceramic base circuit, including：
Ceramic mud is prepared into required shape by step S11., as ceramic bases 100；
Step S12. is blended with the liquid metal 211 of metallic particles with certain circuit pattern brushing in the ceramic base
The surface at bottom 100 forms conducting wire 210；
210 glazing 300 of conducting wire that step S13. forms the ceramic bases 100 and its surface；
Step S14. sintering curings form the ceramic base circuit.
The fusing point of the liquid metal used in the present invention substantially at 300 DEG C hereinafter, compared to the thousands of degree of fusing point gold, silver,
For the metals such as copper, ceramic-metal composite material is prepared using liquid metal, production equipment and corollary equipment requirement are low, carry
The high safety of production.
The a variety of materials for preparing ceramics in the prior art, such as traditional clay, height can be used in ceramic mud in step S11
One in the materials such as ridge soil, alumina powder or the arbitrary mixture combined with water, or be to use new ceramic material, it should
The main component of new ceramic material is based on metal oxide, carbide, boride, nitride and silicide, metal oxidation
Object is in addition to using the ceramic material based on aluminium oxide, also using with any or group in ZrO2, MgO, CaO, BeO, ThO2
It is combined into main ceramic material.And the shape that ceramic mud is prepared into may include：Tabular, corrugation plate, bowl-shape, disk like, tubulose,
Channel-shaped, ampuliform and variously-shaped art work clay sculpture.
Liquid metal employed in step S12 is also known as low-melting-point metal comprising fusing point is below at 300 degrees Celsius
Low-melting-point metal simple substance or alloy, alloying component include gallium, indium, tin, zinc, bismuth, lead, cadmium, mercury, silver, copper, sodium, potassium, magnesium, aluminium,
One or more in iron, nickel, cobalt, manganese, titanium, vanadium, boron, carbon, silicon etc., form can be metal simple-substance, alloy, can also be
The electrical-conductive nanometer fluid that metal nanoparticle is mixed to form with fluid dispersion.More specifically, when the selection electrical-conductive nanometer
When fluid, fluid dispersion is preferably ethyl alcohol, propylene glycol, glycerine, polyvinylpyrrolidone, dimethyl silicone polymer, poly- second
One kind in glycol, polymethyl methacrylate.
Preferably, 211 range of choice of liquid metal includes：Mercury, gallium, indium, tin simple substance, gallium-indium alloy, gallium-indium-tin alloy, gallium
Tin alloy, gallium kirsite, gallium indium kirsite, gallium red brass, gallium indium red brass, gallium tin cadmium alloy, gallium Zn-Cd alloy, bismuth indium
Alloy, bismuth tin alloy, bismuth indium stannum alloy, bismuth indium kirsite, bismuth red brass, bismuth indium red brass, leypewter, Xi Tonghe
One or more of gold, tin pltine, Tin Silver Copper Alloy, bismuth terne metal.This kind of low-melting-point metal has outstanding lead
Electrical and Liquid phase flowability, therefore have unique application value in novel electron structure manufacturing field.
Preferably, it is the liquid metal of liquid, such as gallium simple substance or gallium-base alloy, gallium under 211 optional room temperature of liquid metal
The fusing point of simple substance is 29 DEG C, and its alloy can also appear as being in a liquid state at normal temperatures, and such as gallium-indium alloy, specific gallium indium proportioning is
75.5% gallium and 24.5% indium, the alloy melting point are 15.5 degree, are in liquid form substantially at normal temperatures.It is liquid under room temperature
The gallium-base alloy of state may also include other gallium-base alloys such as gallium tin alloy, and more specifically in addition to above-mentioned gallium-indium alloy
Gallium indium based alloy, gallium kamash alloy, such as gallium-indium-tin alloy etc., above-mentioned liquid metal are in a liquid state at normal temperatures, can room temperature not
Coating operation is carried out under conditions of heating, reduces equipment applicable requirements, reduces energy consumption, promotes safety and operability.
Using the liquid metal 211 being in a liquid state under room temperature, it can be achieved that in the embodiment of the present invention except glazing be sintered in addition to behaviour
It deals with, other processing can carry out at normal temperatures, greatly reduce equipment requirement and production cost, ensure that ceramics-gold
Belong to the production security of composite material.
The metallic particles being blended in step S12 in liquid metal mainly to promote the adhesiveness of liquid metal entirety,
So that it is easier to be adhered to ceramic surface compared to pure liquid metal, and compared using non-metallic particle using metallic particles and
Speech, adhesive of the metallic particles in liquid metal is preferable, is easy uniformly to mix in liquid metal, and in the process of brushing
In the case where being less prone to rupture of line.Preferably, metallic particles can be used one or more in nickel, iron, copper, zinc, aluminium, with
The electrology characteristic or anti-oxidation characteristics of liquid metal are promoted, such as be mixed into copper powder then to make the electric conductivity and thermal conductivity of liquid metal
It gets a promotion, being mixed into nickel then can make the inoxidizability of liquid metal get a promotion.
It can be one or more continuous that the circuit pattern that the conducting wire that liquid metal is formed is presented is brushed in step S12
Threadiness/sheet pattern, every circuit can be in bending, linear, arc-shaped, on the one hand conducting wire should meet its conduction
On the other hand demand can also meet the Demand Design pattern of aesthetic.
The selection of glaze 300 can at least be accounted for from the following aspects in step S13, on the one hand, can be from solidification temperature
High-temperature glaze, intermediate glaze and low temperature glaze can be used in upper consideration, glaze；On the other hand can consider from translucency, glaze can be used clear frit or
Coloured colored glaze etc. can make conducting wire 210 strong bonded with ceramic bases 100, promote conducting wire 210 in ceramics by glazing
Stability in substrate 100, on the other hand can make conducting wire 210 be imbued with aesthetic feeling or be promoted conducting wire 210 it is hidden
Covering property.Preferably, transparent glase fired at lower temperature can be used in glaze 300, can not only make entire production process compared with being completed under low temperature, but also can will be rich
The conducting wire 210 of aesthetic feeling is presented to the external world.
In some embodiments, recessed with certain circuit pattern on the surface of the ceramic bases 100 prepared in step S11
Slot 101；To be filled into the groove 101 by the liquid metal 211 for being blended with metallic particles in the step 2, shape
At the conducting wire 210.Wherein, groove 101 can be wire casing/groove, or be regular groove or irregular groove, recessed
Groove depth can be unified or disunity.
In some embodiments, further include in step S12：Electronic component 220 is set in the conducting wire 210 of formation,
Form functional circuit 200.Specifically, electronic component 220 should select high temperature resistant electronic component, to avoid the process being sintered in glazing
In, the damage of electronic component 220.Electronic component 220 may include heat safe resistance, capacitance, inductance, battery, conventional diode,
Light emitting diode, triode etc., electronic component 220 collectively form functional circuit 200 by being combined with conducting wire 210.One
In a little embodiments, conducting wire 210 also can independently constitute the functional circuit 200 of connection property.
In some embodiments, the preparation method further includes：Using the ceramic base circuit of formation as ceramic base
Bottom is repeated at least once more step S12-S14, forms ceramic base compound circuit.There are one biscuits for tool i.e. in ceramic base compound circuit
Substrate coats one layer of conducting wire or functional circuit thereon, then by substrate and conducting wire or work(by way of glazing sintering
Energy circuit is cured as an entirety, coats one layer of conducting wire or functional circuit on the glaze after resolidification again later, then pass through
Ceramic base circuit substrate and conducting wire or functional circuit are cured as an entirety by the mode of glazing sintering.What is repeated is secondary several
It is needed according to design once or more times, to be then electrically connected by conducting connecting part between the circuit being separated by, conducting connecting part
It can be arranged before first time glazing cures, and so that it is fixedly connected with first layer circuit by first time solidification, be exposed to outer
Another part be then fixedly connected with second layer circuit by second solidification, the fixed form of conducting connecting part, except above-mentioned institute
Illustrate be disposed adjacent except, can also realize interlayer design connection, as long as ensure conducting connecting part in interlayer not with
Circuit therein/circuit electrical connection, details are not described herein.
The preparation method of ceramic base circuit in the embodiment of the present invention can utilize various ways, method, equipment to complete, such as
Traditional ceramics equipment prepares ceramic bases, recycles icking tool equipment to open up groove on the surface of ceramic bases, and brushing liquid
The sintering curing of ceramic glaze is realized in glazing after state metal using high temperature furnace.
Such as the S21 to S28 in Fig. 2, a kind of preferred embodiment, packet are proposed for the preparation method of above-mentioned ceramic base circuit
It includes：
Step S21, using the clay standby molding of ceramics is directly had reeded ceramic bases 100 in 3D printing technique；
Step S22, the ceramic bases 100 with groove 101 are put into the processing of high temperature furnace high temperature；
Step S23, sinter molding has the ceramic bases 100 of certain degree of hardness；
Step S24, the liquid metal 211 for being blended with metallic particles is brushed into the groove 101 of ceramic bases 100, shape
At conducting wire 210；
Step S25, electronic component 220 is placed according to design requirement, electronic component 220 combines composition with conducting wire 210
Functional circuit 200；
Step S26, the ceramic bases 100 for being formed with functional circuit 200 are put into high temperature furnace and carry out high-temperature process, be sintered
Ceramic base circuit is formed after solidification.
The preparation of ceramic base circuit is completed, it can be achieved that the full-automation one prepared by 3D printing technique in the embodiment
Molding.
A kind of ceramic base circuit is shown referring now to Fig. 3, Fig. 3, which can utilize above-mentioned ceramic base circuit
Preparation method complete to prepare, the various patterns etc. of a variety of materials, formation employed in method can be in ceramic base circuit
Realize, and in addition to above-mentioned preparation method, ceramic base circuit in the embodiment of the present invention can also by it is in the prior art its
It is prepared by its mode, method.
The ceramic base circuit, including：Ceramic bases 100；The functional circuit 200 being arranged in the ceramic bases 100；
Wherein, the functional circuit 200 includes the conducting wire 210 and/or electronic component 220 in certain circuit pattern；It is described to lead
At least there is partially electronically conductive circuit in electric line 210 to be made of liquid metal 211；Cover 200 surface of the functional circuit or
Cover the ceramic glaze 300 on 100 surface of the functional circuit 200 and ceramic bases.
Specifically, electronic component 220 should select high temperature resistant electronic component, to avoid during glazing is sintered, electronics
The damage of element 220.Electronic component 220 may include heat safe resistance, capacitance, inductance, battery, conventional diode, luminous two
Pole pipe, triode etc., electronic component 220 collectively form functional circuit 200 by being combined with conducting wire 210.In some implementations
In example, conducting wire 210 also can independently constitute the functional circuit 200 of connection property.
In some embodiments, it is mixed with metallic particles in the liquid metal 211.Preferably, the metallic particles packet
Include at least one of nickel, iron, copper, zinc, aluminium.Wherein, the metallic particles being blended in liquid metal is mainly promoting liquid
The adhesiveness of metal entirety is made it be easier to be adhered to ceramic surface compared to pure liquid metal, and is compared using metallic particles
For non-metallic particle, adhesive of the metallic particles in liquid metal is preferable, is easy uniformly to mix in liquid metal,
And the case where being less prone to rupture of line during brushing.Preferably, nickel, iron, copper, zinc, aluminium can be used in metallic particles
In it is one or more, to promote the electrology characteristic or anti-oxidation characteristics of liquid metal, such as to be mixed into copper powder then and can make liquid golden
The electric conductivity and thermal conductivity of category get a promotion, and being mixed into nickel then can make the inoxidizability of liquid metal get a promotion.
In some embodiments, liquid metal is also known as low-melting-point metal comprising fusing point is below low at 300 degrees Celsius
Melting point metals simple substance or alloy, alloying component include gallium, indium, tin, zinc, bismuth, lead, cadmium, mercury, silver, copper, sodium, potassium, magnesium, aluminium, iron,
One or more in nickel, cobalt, manganese, titanium, vanadium, boron, carbon, silicon etc., form can be metal simple-substance, alloy, can also be gold
The electrical-conductive nanometer fluid that metal nano-particle is mixed to form with fluid dispersion.More specifically, when the selection electrical-conductive nanometer stream
When body, fluid dispersion is preferably ethyl alcohol, propylene glycol, glycerine, polyvinylpyrrolidone, dimethyl silicone polymer, poly- second two
One kind in alcohol, polymethyl methacrylate.
Preferably, 211 range of choice of liquid metal includes：Mercury, gallium, indium, tin simple substance, gallium-indium alloy, gallium-indium-tin alloy, gallium
Tin alloy, gallium kirsite, gallium indium kirsite, gallium red brass, gallium indium red brass, gallium tin cadmium alloy, gallium Zn-Cd alloy, bismuth indium
Alloy, bismuth tin alloy, bismuth indium stannum alloy, bismuth indium kirsite, bismuth red brass, bismuth indium red brass, leypewter, Xi Tonghe
One or more of gold, tin pltine, Tin Silver Copper Alloy, bismuth terne metal.This kind of low-melting-point metal has outstanding lead
Electrical and Liquid phase flowability, therefore have unique application value in novel electron structure manufacturing field.
Preferably, the fusing point of 211 optional gallium simple substance of liquid metal or gallium-base alloy, gallium simple substance is 29 DEG C, and its alloy
It can behave as being in a liquid state at normal temperatures, such as gallium-indium alloy, specific gallium indium proportioning is 75.5% gallium and 24.5% indium, is somebody's turn to do
Alloy melting point is 15.5 degree, is in liquid form substantially at normal temperatures.
Using the liquid metal 211 being in a liquid state under room temperature, it can be achieved that in the embodiment of the present invention except glazing be sintered in addition to behaviour
It deals with, other processing can carry out at normal temperatures, greatly reduce equipment requirement and production cost, ensure that ceramics-gold
Belong to the production security of composite material.
In some embodiments, the groove for accommodating the liquid metal 211 is offered on 100 surface of the ceramic bases
101, the liquid metal 211 in the groove 101 constitutes the conducting wire 210 or the part conducting wire 210.
In some embodiments, the ceramic bases 100 include：Biscuit of ceramics, glazed ceramics and the ceramic base circuit
In one kind.
In some embodiments, the main component of the biscuit of ceramics includes：Clay, kaolin, metal oxide, carbonization
At least one of object, boride, nitride and silicide.
As Fig. 4 makes the ceramic base compound circuit of formation using ceramic base circuit as ceramic bases.
It should also be appreciated by one skilled in the art that various illustrative logical boxs, mould in conjunction with the embodiments herein description
Electronic hardware, computer software or combinations thereof may be implemented into block, circuit and algorithm steps.In order to clearly demonstrate hardware and
Interchangeability between software surrounds various illustrative components, frame, module, circuit and step its function above and carries out
It is generally described.It is implemented as hardware as this function and is also implemented as software, depends on specific application and to entire
The design constraint that system is applied.Those skilled in the art can be directed to each specific application, be realized in a manner of flexible
Described function, it is still, this to realize that decision should not be construed as the protection domain away from the disclosure.
Claims (12)
1. a kind of preparation method of ceramic base circuit, which is characterized in that including：
Ceramic mud is prepared into required shape by step 1, as ceramic bases；
Step 2 is blended with the liquid metal of metallic particles with certain circuit pattern brushing on the surface of the ceramic bases,
Form conducting wire；
Step 3, the conducting wire glazing that the ceramic bases and its surface are formed；
Step 4, sintering curing form the ceramic base circuit.
2. ceramic base circuit according to claim 1, which is characterized in that the ceramic bases obtained in the step 1
Surface on certain circuit pattern groove；
It is filled into the groove in the step 2 by being blended with the liquid metal of metallic particles, forms the conductor wire
Road.
3. ceramic base circuit according to claim 1, which is characterized in that further include in the step 2：In the conduction of formation
Electronic component is set on circuit, forms functional circuit.
4. the ceramic base circuit according to claim 1-3, which is characterized in that further include：
Using the ceramic base circuit of formation as ceramic bases, it is repeated at least once more step 2-4, forms ceramic base composite electric
Road.
5. a kind of ceramic base circuit, which is characterized in that including：
Ceramic bases；
Functional circuit in the ceramic bases is set；Wherein, the functional circuit includes leading in certain circuit pattern
Electric line and/or electronic component；At least there is partially electronically conductive circuit in the conducting wire to be made of liquid metal；
Cover the functional circuit surface or the covering functional circuit and the ceramic glaze on ceramic bases surface.
6. ceramic base circuit according to claim 5, which is characterized in that be mixed with metallic particles in the liquid metal.
7. ceramic base circuit according to claim 6, which is characterized in that the metallic particles includes nickel, iron, copper, zinc, aluminium
At least one of.
8. ceramic base circuit according to claim 7, which is characterized in that the liquid metal includes：Gallium simple substance and gallium base
Alloy.
9. ceramic base circuit according to claim 5, which is characterized in that offered on the ceramic bases surface and accommodate institute
The groove of liquid metal is stated, the liquid metal in the groove constitutes the conducting wire or the part conducting wire.
10. ceramic base circuit according to claim 5, which is characterized in that the ceramic bases include：Biscuit of ceramics, on
One kind in glaze ceramics and the ceramic base circuit.
11. ceramic base circuit according to claim 10, which is characterized in that the main component of the biscuit of ceramics includes：
At least one of clay, kaolin, metal oxide, carbide, boride, nitride and silicide.
12. ceramic base circuit according to claim 5, which is characterized in that the liquid metal is fusing point at 300 degrees Celsius
Low-melting-point metal simple substance, low-melting point metal alloy and low-melting-point metal simple substance/low-melting point metal alloy and fluid below point
One of electrical-conductive nanometer fluid that powder is mixed to get or arbitrary combination.
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