CN103725261B - A kind of Ternary liquid metal heat interface material with two melting point character - Google Patents
A kind of Ternary liquid metal heat interface material with two melting point character Download PDFInfo
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- CN103725261B CN103725261B CN201310640632.XA CN201310640632A CN103725261B CN 103725261 B CN103725261 B CN 103725261B CN 201310640632 A CN201310640632 A CN 201310640632A CN 103725261 B CN103725261 B CN 103725261B
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Abstract
The invention discloses a kind of Ternary liquid metal heat interface material with two melting point character.Liquid metal thermal interface material of the present invention is three layers of foil-like structure, and bilevel material is made up of indium, bismuth and tin, and its molecular fraction is indium 56%, bismuth 20% and tin 24% respectively; The material in middle layer is made up of indium, bismuth and tin, and its molecular fraction is indium 40%, bismuth 48% and tin 12% respectively.The liquid metal thermal interface material with two melting point character of the present invention's design can fill the hole between heating element and radiator upon initial installation at a lower temperature completely, produces solidification subsequently due to diffusion.Can be in solid-state under normal working temperature.When electronic device temperature rises to design load, liquid metal thermal interface material can produce secondary fusion to reach the object of significantly cooling electronic device, has a extensive future.
Description
Technical field
The present invention relates to a kind of preparation method of Ternary liquid metal heat interface material, specifically, relate to a kind of Ternary liquid metal heat interface material with two melting point character.
Background technology
Along with the development of electronic chip Highgrade integration, the heating power of whole electron device is increasing, and the working temperature of different parts significantly rises.The working temperature of electron device directly determines its work-ing life and stability.Device works and greatly can reduce the work-ing life of electron device at high temperature.Allow electron device be operated in rational temperature range, except ensureing that operating ambient temperature in the reasonable scope, also must carry out effective radiating treatment to electron device.Heat dissipation problem has become the gordian technique bottleneck of microelectronics development.In each assembly of electronic product from inside to outside sinking path, heat interfacial material is the critical material determining heat radiation power height.Heat interfacial material is used to fill hole between heating element and radiator, plays the medium promoted heat transfer efficiencies and reduce thermal impedance.
Typical heat interfacial material can be divided into: heat-conducting silicone grease, thermally conductive gel, polymer heat interfacial material and metal heat interface material etc.Heat-conducting silicone grease thermal conductivity is approximately 3-5W/m K.Can by adding aluminum oxide (Al in silicone grease
2o
3), aluminium nitride (AlN), silicon-dioxide (SiO
2), boron nitride (BN), the ceramic particles such as silicon carbide (SiC) and silver (Ag), the metallic particles such as copper (Cu) improve the capacity of heat transmission of silicone grease further.Thermally conductive gel is in the organism matrix with better elasticity or plasticity, add the particle with high thermal conductivity, and is prepared from through curing cross-linking reaction, and thermal conductivity is approximately 3-4W/m K.Polymer heat interfacial material mainly comprises the thermoplastic resin of melt temperature between 50-80 DEG C.These material heat transfer coefficients itself are very low, by the particle adding high heat conduction, the heat transfer coefficient of material can be maintained 1-2W/m about K.Liquid metal thermal interface material has a kind of novel alloy medium of high thermal conductivity (being about 80W/m K), can at room temperature with liquid state, and the form of paste and foil-like exists.By adding Nanometer Copper and the thermal conductivity of material can be brought up to 120W/m about K by nanometer silver in liquid metal.Liquid metal thermal interface material makes the heat-sinking capability of chip to have owing to having high thermal conductivity significantly to promote.Make us feeling regrettably, liquid metal mobility when hot operation is excessive may cause short circuit.Desirable liquid metal thermal interface material not only can utilize its high workability to fill the hole between heating element and radiator when melting, the short circuit simultaneously mobility of liquid metal thermal interface material when high temperature can being avoided to cause.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, a kind of liquid metal thermal interface material with two melting point character is provided.
To achieve these goals, the present invention adopts following technical scheme:
A kind of liquid metal thermal interface material, it is three layers of foil-like structure, and bilevel material is made up of indium, bismuth and tin, and its molecular fraction is indium 56%, bismuth 20% and tin 24% respectively; The material in middle layer is made up of indium, bismuth and tin, and its molecular fraction is indium 40%, bismuth 48% and tin 12% respectively.Liquid metal thermal interface material of the present invention has the foil-like alloy material of three-decker, and laminate structure distribution has symmetrical feature.The upper and lower have same thickness and composition.Middle layer has the alloying constituent being different from levels.In above-mentioned liquid metal thermal interface material, the thickness of described upper and lower materials at two layers is equally large, and bilevel thickness is preferably 0.01mm, and the thickness of intermediate layer material is preferably 0.03mm.The upper and lower have the fusing point lower than middle layer, effectively can fill the gap between heating element and radiator when the upper and lower alloy melting, improve heat transfer efficiency.When the upper and lower alloy melting, occur to spread with middle layer solid alloy material and change composition, the variation of composition makes levels alloy graining.When device temperature becomes higher, the levels had cured and middle layer can be melted again, thus carry out efficient heat conduction at higher temperatures.
Compared with prior art, the present invention has following beneficial effect:
The liquid metal thermal interface material with two melting point character of the present invention's design, overcoming general foil-like liquid metal thermal interface material can only melt at certain single temperature, and the problem that under liquid condition, alloy flowability is excessive.Also ensure that the liquid metal thermal interface material had cured can melt to carry out the characteristic of high efficiency and heat radiation further when device temperature continues to rise simultaneously.This foil-like liquid metal thermal interface material can fill the hole between heating element and radiator upon initial installation at a lower temperature completely, produces solidification subsequently due to diffusion.Can be in solid-state under normal working temperature.When electronic device temperature rises to design load, liquid metal thermal interface material can produce secondary fusion to reach the object of significantly cooling electronic device, has a extensive future.
Accompanying drawing explanation
Fig. 1 is sandwich structure liquid metal thermal interface material structure schematic diagram.
Fig. 2 utilizes two of A-B-C ternary system low melting point compositions (a and b) prepare the schematic diagram of two fusing point liquid metal thermal interface material, c becomes branch to represent the fusing point of whole system.
Fig. 3 is the schematic diagram of liquid metal thermal interface material enforcement between heating element and radiator with two melting point character.
Embodiment
embodiment 1
The Ternary liquid metal heat interface material of In-Bi-Sn composition, bilevel composition is chosen as In0.56-0.20Bi-0.24Sn (molar fraction).The Material selec-tion In0.40-0.48Bi-0.12Sn (molar fraction) in middle layer, is prepared into three layers of foil-like structure according to the alloy of this formulated after vacuum induction melting, and the thickness of levels is 0.01mm, and the thickness in middle layer is 0.03mm.Then three layers of foil-like alloy material are merged into the liquid metal thermal interface material with sandwich structure, peak melting point is at about 90 DEG C.As shown in Figure 1, be respectively have compared with low melting point levels (a) and there is the middle layer (b) of higher melt.
The present invention selects to have the element with heating element and radiator material with enough chemical compatibilities from the periodic table of elements.And select two alloying constituents with suitable fusion points with reference to binary and Multi-Component Phase Diagram.Lower (the T of one of them fusing point
l), the higher (T of another one fusing point
h).T
ltemperature can select at 50-80 DEG C, T as required
hselection will according to the maximum operating temperature (T of electron device
m) determine.Fig. 2 is the liquid metal thermal interface material schematic diagram from ternary phase diagrams design with two melting point character.Wherein a and b point composition correspond to levels in Fig. 2 and middle layer respectively, and the composition that c point is corresponding is the average assay of whole material.The fusing point corresponding to average assay of the sandwich structure of the foil-like material of low melting point and dystectic foil-like material composition will control at T
mleft and right.
Gained had the liquid metal thermal interface materials application of two melting point character between heating element and radiator, as shown in Figure 3.When heating element temperature is elevated to T
ltime, the liquid metal material of outermost takes the lead in melting, and flows and fills rough gap around, improving heat transfer efficiency.When the upper and lower alloy melting, occur to spread with middle layer solid alloy material and change composition, the variation of composition makes levels alloy graining.When device temperature becomes higher, the levels had cured and middle layer can be melted again, thus carry out high-efficiency heat conduction at higher temperatures.The final fusing point of sandwich structure foil-like liquid metal material can control higher about 5 DEG C than electron device maximum operating temperature.
Claims (3)
1. a Ternary liquid metal heat interface material, it is characterized in that three layers of foil-like structure, bilevel material is made up of indium, bismuth and tin, and its molecular fraction is indium 56%, bismuth 20% and tin 24% respectively; The material in middle layer is made up of indium, bismuth and tin, and its molecular fraction is indium 40%, bismuth 48% and tin 12% respectively.
2. Ternary liquid metal heat interface material as claimed in claim 1, is characterized in that, described two-layer be up and down the same thickness.
3. Ternary liquid metal heat interface material as claimed in claim, it is characterized in that, the thickness of described upper and lower materials at two layers is 0.01mm, and the thickness of intermediate layer material is 0.03mm.
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| CN110643331B (en) * | 2019-10-12 | 2021-11-09 | 云南靖创液态金属热控技术研发有限公司 | Liquid metal heat-conducting paste and preparation method and application thereof |
| CN113889442A (en) * | 2020-07-03 | 2022-01-04 | 华为技术有限公司 | Heat conducting member, single board, computing equipment and manufacturing method |
| CN112538336B (en) * | 2020-12-08 | 2021-10-12 | 中国科学院工程热物理研究所 | Liquid metal solid-liquid coupling type multilayer thermal interface material and preparation method thereof |
| CN113755138A (en) * | 2021-09-02 | 2021-12-07 | 宁波施捷电子有限公司 | Thermal interface material and electronic device comprising same |
| CN115197677A (en) * | 2022-07-27 | 2022-10-18 | 空间液金技术研究(昆山)有限公司 | Thermal interface material with phase change function, preparation method and application thereof |
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| CN1606901A (en) * | 2000-02-25 | 2005-04-13 | 瑟玛根公司 | Multi-layer thermal interface and method for forming a thermal interface with low thermal resistance |
| WO2006020332A1 (en) * | 2004-08-13 | 2006-02-23 | Intel Corporation | Liquid metal thermal interface for an integrated circuit device |
| CN101022712A (en) * | 2006-02-15 | 2007-08-22 | 富准精密工业(深圳)有限公司 | Thermal interfacial material and radiating device association using the same thermal interfacial material |
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| CN101899288B (en) * | 2009-05-27 | 2012-11-21 | 清华大学 | Thermal interface material and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1606901A (en) * | 2000-02-25 | 2005-04-13 | 瑟玛根公司 | Multi-layer thermal interface and method for forming a thermal interface with low thermal resistance |
| WO2006020332A1 (en) * | 2004-08-13 | 2006-02-23 | Intel Corporation | Liquid metal thermal interface for an integrated circuit device |
| CN101022712A (en) * | 2006-02-15 | 2007-08-22 | 富准精密工业(深圳)有限公司 | Thermal interfacial material and radiating device association using the same thermal interfacial material |
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