CN108539055B - A kind of production method and OLED product of OLED product - Google Patents
A kind of production method and OLED product of OLED product Download PDFInfo
- Publication number
- CN108539055B CN108539055B CN201810354264.5A CN201810354264A CN108539055B CN 108539055 B CN108539055 B CN 108539055B CN 201810354264 A CN201810354264 A CN 201810354264A CN 108539055 B CN108539055 B CN 108539055B
- Authority
- CN
- China
- Prior art keywords
- layer
- ito
- alloy
- production method
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Abstract
The present invention provides the production method and product of a kind of OLED product, which includes the following steps: (1) to provide an ito substrate;Step 2 performs etching the first ITO layer on ito substrate, forms ito anode layer;Step 3 makes Mo alloy-layer on ito anode layer, and the second ITO layer is made on the another side of ito substrate;Step 4 performs etching the second ITO layer, forms the first ITO touch layer;Step 5 makes and etches to form the first Mo/Al/Mo pattern layer on the first ITO touch layer;Step 6 makes hard protective layer on the first ITO touch layer and the first Mo/Al/Mo pattern layer;Step 7, the removal Mo alloy-layer;Step 8 makes on ito anode layer and etches to form the 2nd Mo/Al/Mo pattern layer;Step 9: production OLED functional layer and metal cathode layer.The present invention is able to solve during the existing OLED production using ON CELL technology plus the problem of the technical solution of assistant metal and Mo alloy protecting scheme process compatibility difference, can effectively improve product quality and production efficiency.
Description
Technical field
The present invention relates to field of display technology, and the production method and OLED more particularly to a kind of OLED product produce
Product.
Background technique
ON CELL technology is one of the best solution of OLED product integrated touch function, and the technology is by ITO touch layer
It is arranged on the light-emitting surface surface of OLED product, needing when etching the touch patterns of ITO touch layer first will be on substrate back
Ito anode layer protects, and common guard method is silk-screen or stickup layer protecting film on ito anode layer.This kind of guarantor
Although maintaining method equipment and processing procedure are all relatively easy, it is easy to produce residue glue, the problems such as ito anode layer is weighed wounded, and etching
It needs to tear protective film manually after complete ITO touch layer, thus is unfavorable for the automation of technique and the volume production of advanced lines producing line.It is existing
Also there is using Mo alloy the technical solution done and protected, production efficiency can be effectively improved, but it is existing using Mo alloy guarantor
The touch control electrode of the OLED product formation of shield scheme only has ITO touch layer, and resistance is larger, so that report point rate declines and is difficult to obtain
It is highly sensitive;In order to solve the problems, such as ITO touch layer resistance it is big can using plus assistant metal technical solution, but it is existing
Add the technical solution of assistant metal and Mo alloy protecting scheme process compatibility poor, so that product quality is low and production efficiency is low.
Summary of the invention
The technical problem to be solved by the present invention is to be able to solve the existing OLED production using ON CELL technology
In the process plus the problem of the technical solution of assistant metal and Mo alloy protecting scheme process compatibility difference, product can be effectively improved
Quality and production efficiency.
In order to solve the above technical problems, the present invention provides a kind of production methods of OLED product, comprising the following steps:
Step 1 provides an ito substrate;
Step 2 performs etching the first ITO layer on the ito substrate using ITO etching liquid, makes anode pattern, shape
At ito anode layer;
Step 3 makes Mo alloy-layer on the ito anode layer, makes second on the another side of the ito substrate
ITO layer;
Step 4 performs etching second ITO layer using ITO etching liquid, makes the first touch patterns, forms first
ITO touch layer;
Step 5 makes the first Mo/Al/Mo layers of face resistance less than the first ITO touch layer on the first ITO touch layer
And it etches to form the first Mo/Al/Mo pattern layer using harsh liquid;
Step 6 makes hard protective layer on the first ITO touch layer and the first Mo/Al/Mo pattern layer;
Step 7 removes the Mo alloy-layer using harsh liquid;
Step 8, on the ito anode layer production the 2nd Mo/Al/Mo layer and use harsh liquid etch to form the 2nd Mo/
Al/Mo pattern layer;
Step 9: OLED functional layer and metal cathode layer are successively made on the ito anode layer.
As a preferred solution of the present invention, the thickness of second ITO layer is less than 500.
As a preferred solution of the present invention, which is characterized in that the ITO etching liquid be include HNO3, HCL and H2O
Mixed liquor, wherein the mass concentration that the mass concentration of HCL is 36~38%, HNO3 is 65~68%;The ITO etching solution
Temperature is 25 ~ 50 DEG C;The harsh liquid is the mixed liquor for including HNO3, CH3COOH and H3PO4.
As a preferred solution of the present invention, which is characterized in that the mass percent of Mo is in the Mo alloy-layer
80%-95%, the Mo alloy-layer with a thickness of 3000-5000.
As a preferred solution of the present invention, quality of the Mo in Mo alloy film in the first Mo/Al/Mo pattern layer
Percentage is greater than mass percent of 95%, the Al in Al alloy film and is more than or equal to 95%;The first Mo/Al/Mo pattern layer
With a thickness of 1000 ~ 3000.
As a preferred solution of the present invention, the hard protective layer all covers the first Mo/Al/Mo pattern
Layer.
As a preferred solution of the present invention, Mo/Al/Mo layers of the first in the step 5 replaces with the first Mo layers, and
One Mo/Al/Mo pattern layer replaces with the first Mo pattern layer.
As a preferred solution of the present invention, the mass percent of the Mo in the first Mo pattern layer is greater than or equal to
95%, the first Mo pattern layer with a thickness of 1000 ~ 3000.
Further, a kind of OLED product is also provided, is obtained using the production method of the OLED product of any description above.
The present invention has the following technical effect that a kind of production method of OLED product provided in this embodiment to described
Before two ITO layers perform etching, one layer of Mo alloy-layer is first made on the ito anode layer for having completed etching, with package
The ito anode layer is covered, there is surfacing, high-melting-point, high rigidity, high compactness, Yi Ji using the Mo alloy-layer
Has the characteristics that of short duration inertia in the ITO etching liquid, in the etching process of the first ITO touch layer, described in protection
Ito anode layer, so that the ito anode layer can be avoided the erosion of the ITO etching liquid and the scuffing of external force, weigh wounded;Meanwhile
It is less than the first of ITO touch layer by making face resistance on the first ITO touch layer Mo/Al/Mo layer or the first Mo layer and to use sour
It carves liquid to etch to form the first Mo/Al/Mo pattern layer or the first Mo pattern layer, can effectively play reduces OLED product touch control electrode
Face resistance, improve sensitivity;And the first Mo/Al/Mo pattern layer or first has been effectively ensured in production method provided in this embodiment
The production and protective effect of the Mo alloy-layer in entire manufacturing process of Mo pattern layer, process compatibility is strong, can effectively improve
Product quality and production efficiency.
Detailed description of the invention
Fig. 1 is a kind of flow diagram of the production method for OLED product that the embodiment of the present invention one provides;
Fig. 2 is a kind of flow diagram of the production method of OLED product provided by Embodiment 2 of the present invention.
Specific embodiment
To make the purpose of the present invention, technical solution and advantage are clearer, with reference to the accompanying drawing to embodiment of the present invention
It is described in further detail.Obviously, described embodiment is a part of the embodiments of the present invention, rather than whole implementation
Example.Based on described the embodiment of the present invention, those of ordinary skill in the art are obtained under the premise of being not necessarily to creative work
The every other embodiment obtained, shall fall within the protection scope of the present invention.
Unless otherwise defined, the technical term or scientific term that the present invention uses should be tool in fields of the present invention
The ordinary meaning for thering is the personage of general technical ability to be understood." first ", " second " used in the present invention and similar word are simultaneously
Any sequence, quantity or importance are not indicated, and are used only to distinguish different component parts.
Embodiment one
As shown in Figure 1, which show a kind of production methods of OLED product provided by the invention.The production of the OLED product
Method specifically includes the following steps:
Step 1 provides an ito substrate;Specifically, the step 1 may include: step 1.1, provide a transparent substrate;
Step 1.2 makes SiO2 layers on the transparent substrate;Step 1.2 plates the first ITO layer on SiO2 layers described.Wherein, institute
Stating transparent substrate is preferably glass substrate, is processed by shot blasting before SiO2 layers of production to its surface, SiO2 layers of the thickness
Degree is 200 ~ 300;The production method of first ITO layer is magnetron sputtering, and depositing temperature is between 200-280 DEG C, thickness
It can be 800 ~ 2200, first ITO layer also needs to carry out soft polishing treatment to its surface, control its table after completing
Surface roughness Ra < 10.
Step 2 performs etching the first ITO layer on the ito substrate using ITO etching liquid, makes anode pattern, shape
At ito anode layer;And specifically, it is preferable to but be not limited in yellow light wet process carry out first ITO layer using ITO etching solution
Etching, the ITO etching liquid preferably comprises the mixed liquor of HNO3, HCL and H2O, wherein and the mass concentration of HCL is 36~
The mass concentration of 38%, HNO3 are 65~68%;The temperature of the ITO etching solution is 25 ~ 50 DEG C;The harsh liquid is to include
The mixed liquor of HNO3, CH3COOH and H3PO4.
Step 3 makes Mo alloy-layer on the ito anode layer, makes second on the another side of the ito substrate
ITO layer;Specifically, Mo alloy-layer can be first made on the ito anode layer, then is made on the another side of the ito substrate
Make the second ITO layer, alternatively, the second ITO layer can also first be made on the another side of the ito substrate, then in the ito anode
Mo alloy-layer is made on layer;It is, of course, preferable to first to make Mo alloy-layer on the ito anode layer, then in the ito substrate
The second ITO layer is made on another side, in this way it is possible to prevente effectively from ito anode layer is weighed wounded in the manufacturing process of ito anode layer
Or pollution.Wherein, the production method of the Mo alloy-layer be magnetron sputtering, due to the Mo alloy-layer have surfacing,
High-melting-point, high rigidity, high compactness can play guarantor to the ito anode layer after package covers the ito anode layer
Shield effect, hardness can make the anode pattern on the ito anode layer scratch, weigh wounded from external force;The Mo is closed
In layer gold the mass percent of Mo be 80%-95%, the Mo alloy-layer with a thickness of 3000-5000.Preferably, the step 3
It can also be included between the second ITO layer and ito substrate and anti-reflection film is set, can be used for disappearing shadow or increase transmitance.
Step 4 performs etching second ITO layer using ITO etching liquid, makes the first touch patterns, forms first
ITO touch layer;Specifically, the thickness of second ITO layer is carved liquid using ITO in yellow light wet process and is carved less than 500
Erosion, it is preferable that using lower spray mode, completely dispense with spray mode and perform etching, i.e., the described ITO etching solution, which directly sprays, to be arrived
It is reacted and is etched in the surface of second ITO layer.
The ITO etching liquid is the mixed liquor for including HNO3, HCL and H2O, wherein the mass concentration of HCL is 36~38%
(AR grades), the mass concentration of HNO3 are 65~68%(AR grades);The temperature of the ITO etching liquid is 25 ~ 50 DEG C.
Since the Mo alloy-layer has of short duration inertia in the ITO etching liquid, the Mo alloy-layer can be utilized
This of short duration inertia avoids the dense membrane structure of itself from being carved in the etching process of the first ITO touch layer by the ITO
Erosion liquid is destroyed, so that the ito anode layer be avoided to be carved in the etching process of the first ITO touch layer by the ITO
Lose the erosion of liquid.
Step 5 makes face resistance on the first ITO touch layer and is less than the first of ITO touch layer and Mo/Al/Mo layers and adopts
It is etched to form the first Mo/Al/Mo pattern layer with harsh liquid;Specifically, in the first Mo/Al/Mo pattern layer Mo in Mo alloy
Mass percent in film is greater than mass percent of 95%, the Al in Al alloy film and is more than or equal to 95%;First Mo/Al/
Mo pattern layer with a thickness of 1000-3000.Specifically, due to the setting of Mo alloy-layer, the first Mo/Al/Mo figure is formed in etching
During pattern layer, Mo alloy-layer will appear a degree of impaired, but residual thickness can still be effectively ensured, in this implementation
In example, Mo alloy-layer that step 3 is formed with a thickness of 3000-5000, carrying out step 5 can also form more than or equal to 1000
Residual thickness.
Step 6 makes hard protective layer on the first ITO touch layer and the first Mo/Al/Mo pattern layer;Specifically,
The production method of the hard protective layer includes but is not limited to silk-screen, bat printing, blade coating or spin coating etc., and hardness reaches 7- after solidification
9H.Hard protective layer can with the first ITO touch layer of effective protection and the first Mo/Al/Mo pattern layer, avoid in follow-up process by
To damage, specifically, hard protective layer all covers the first Mo/Al/Mo pattern layer, while covering the first ITO touch layer
And the binding position of the first ITO touch layer is reserved.
Step 7 removes the Mo alloy-layer using harsh liquid;Specifically, the harsh liquid be include HNO3, CH3COOH
With the mixed liquor of H3PO4, since the Mo etching liquid will not corrode ITO material, this step is to etch period, etching temperature
Etc. only can need to completely removing the Mo alloy-layer without particular/special requirement, any residual is not left, and due to step 5
The part removal to Mo alloy-layer has been formd during carrying out, and can effectively accelerate the effect of this step removal Mo alloy-layer
Fruit.
Step 8, on the ito anode layer production the 2nd Mo/Al/Mo layer and use harsh liquid etch to form the 2nd Mo/
Al/Mo pattern layer;Step 9: OLED functional layer and metal cathode layer are successively made on the ito anode layer.
A kind of production method of OLED product provided in this embodiment is before performing etching second ITO layer, first
One layer of Mo alloy-layer is made on the ito anode layer for having completed etching, and the ito anode layer is covered with package, is utilized
The Mo alloy-layer has surfacing, high-melting-point, high rigidity, high compactness, and with of short duration in the ITO etching liquid
Inertia the features such as, in the etching process of the first ITO touch layer, the ito anode layer is protected, so that the ITO is positive
Pole layer can be avoided the erosion of the ITO etching liquid and the scuffing of external force, weigh wounded;Meanwhile by being made on the first ITO touch layer
Make face resistance be less than ITO touch layer the first Mo/Al/Mo layer and use harsh liquid etch to form the first Mo/Al/Mo pattern layer, energy
The face resistance for reducing OLED product touch control electrode is enough effectively played, sensitivity is improved;And production method provided in this embodiment is effective
It ensure that the production and protective effect of the Mo alloy-layer in entire manufacturing process of the first Mo/Al/Mo pattern layer, process compatibility
By force, product quality and production efficiency can be effectively improved.
Embodiment two
The present embodiment is identical as previous embodiment principle, and structure is similar, and difference is only that, as shown in Fig. 2, described first
Mo/Al/Mo layers replace with the first Mo layers, and the first Mo/Al/Mo pattern layer replaces with the first Mo pattern layer;
Specifically, a kind of OLED product provided in this embodiment production method specifically includes the following steps:
Step 1 provides an ito substrate;
Step 2 performs etching the first ITO layer on the ito substrate using ITO etching liquid, makes anode pattern, shape
At ito anode layer;
Step 3 makes Mo alloy-layer on the ito anode layer, makes second on the another side of the ito substrate
ITO layer;
Step 4 performs etching second ITO layer using ITO etching liquid, makes the first touch patterns, forms first
ITO touch layer;
Step 5, on the first ITO touch layer make face resistance be less than ITO touch layer the first Mo layer and use it is harsh
Liquid etches to form the first Mo pattern layer;Specifically, the mass percent of the Mo in the first Mo pattern layer is greater than or equal to
95%, the first Mo pattern layer with a thickness of 1000-3000.
Step 6 makes hard protective layer on the first ITO touch layer and the first Mo/Al/Mo pattern layer;
Step 7 removes the Mo alloy-layer using harsh liquid;
Step 8, on the ito anode layer production the 2nd Mo/Al/Mo layer and use harsh liquid etch to form the 2nd Mo/
Al/Mo pattern layer;
Step 9: OLED functional layer and metal cathode layer are successively made on the ito anode layer.
A kind of production method of OLED product provided in this embodiment is before performing etching second ITO layer, first
One layer of Mo alloy-layer is made on the ito anode layer for having completed etching, and the ito anode layer is covered with package, is utilized
The Mo alloy-layer has surfacing, high-melting-point, high rigidity, high compactness, and with of short duration in the ITO etching liquid
Inertia the features such as, in the etching process of the first ITO touch layer, the ito anode layer is protected, so that the ITO is positive
Pole layer can be avoided the erosion of the ITO etching liquid and the scuffing of external force, weigh wounded;Meanwhile by being made on the first ITO touch layer
Make face resistance be less than ITO touch layer the first Mo layer and use harsh liquid etch to form the first Mo pattern layer, drop can be effectively played
The face of low OLED product touch control electrode hinders, and improves sensitivity;And the first Mo/ has been effectively ensured in production method provided in this embodiment
The production and protective effect of the Mo alloy-layer in entire manufacturing process of Al/Mo pattern layer, process compatibility is strong, can effectively mention
High yield quality and production efficiency.
Embodiment three
The present embodiment provides a kind of OLED products, are obtained using the production method of OLED product described in any of the above embodiment
?.
Embodiments of the present invention above described embodiment only expresses, the description thereof is more specific and detailed, but can not
Therefore limitations on the scope of the patent of the present invention are interpreted as, as long as skill obtained in the form of equivalent substitutions or equivalent transformations
Art scheme should all be fallen within the scope and spirit of the invention.
Claims (7)
1. a kind of production method of OLED product, which comprises the following steps:
Step 1 provides an ito substrate;
Step 2 performs etching the first ITO layer on the ito substrate using ITO etching liquid, makes anode pattern, is formed
Ito anode layer;
Step 3 makes Mo alloy-layer on the ito anode layer, and the second ITO layer is made on the another side of the ito substrate;
Step 4 performs etching second ITO layer using ITO etching liquid, makes the first touch patterns, forms the first ITO touching
Touch layer;
Step 5 makes the first of resistance less than the first ITO touch layer of face on the first ITO touch layer and Mo/Al/Mo layers and adopts
It is etched to form the first Mo/Al/Mo pattern layer with harsh liquid;
Step 6 makes hard protective layer on the first ITO touch layer and the first Mo/Al/Mo pattern layer;
Step 7 removes the Mo alloy-layer using harsh liquid;
Step 8, on the ito anode layer production the 2nd Mo/Al/Mo layer and use harsh liquid etch to form the 2nd Mo/Al/Mo
Pattern layer;
Step 9: OLED functional layer and metal cathode layer are successively made on the ito anode layer.
2. the production method of OLED product according to claim 1, which is characterized in that the thickness of second ITO layer is small
In 500.
3. the production method of OLED product according to claim 1, which is characterized in that the ITO etching liquid is to include
The mixed liquor of HNO3, HCL and H2O, wherein the mass concentration that the mass concentration of HCL is 36~38%, HNO3 is 65~68%;Institute
The temperature for stating ITO etching solution is 25 ~ 50 DEG C;The harsh liquid be include HNO3、CH3COOH and H3PO4Mixed liquor.
4. the production method of OLED product according to claim 1, which is characterized in that the quality of Mo in the Mo alloy-layer
Percentage is 80%-95%, the Mo alloy-layer with a thickness of 3000-5000.
5. the production method of OLED product according to claim 1-4, which is characterized in that the first Mo/Al/
Mo layers replace with the first Mo layers, and the first Mo/Al/Mo pattern layer replaces with the first Mo pattern layer.
6. the production method of OLED product according to claim 5, which is characterized in that the Mo in the first Mo pattern layer
Mass percent be greater than or equal to 95%, the first Mo pattern layer with a thickness of 1000 ~ 3000.
7. a kind of OLED product, which is characterized in that obtained using the production method of OLED product as claimed in any one of claims 1 to 6
?.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810354264.5A CN108539055B (en) | 2018-04-19 | 2018-04-19 | A kind of production method and OLED product of OLED product |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810354264.5A CN108539055B (en) | 2018-04-19 | 2018-04-19 | A kind of production method and OLED product of OLED product |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108539055A CN108539055A (en) | 2018-09-14 |
CN108539055B true CN108539055B (en) | 2019-10-08 |
Family
ID=63478453
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810354264.5A Active CN108539055B (en) | 2018-04-19 | 2018-04-19 | A kind of production method and OLED product of OLED product |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN108539055B (en) |
Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20120086211A (en) * | 2011-01-25 | 2012-08-02 | 엘지이노텍 주식회사 | Method for manufacturing touch panel |
CN202658083U (en) * | 2012-07-06 | 2013-01-09 | 深圳市新济达光电科技有限公司 | Functional sheet capable of eliminating shadow and capacitive touch screen |
CN202711220U (en) * | 2012-07-06 | 2013-01-30 | 深圳市新济达光电科技有限公司 | Function sheet for surface capacity touch screen |
CN103425375A (en) * | 2013-08-09 | 2013-12-04 | 芜湖长信科技股份有限公司 | Capacitive touch screen and manufacturing method thereof |
CN103456392A (en) * | 2013-08-27 | 2013-12-18 | 南昌欧菲光科技有限公司 | Transparent electric conductor and manufacturing method thereof |
CN104485428A (en) * | 2014-12-29 | 2015-04-01 | 信利半导体有限公司 | OLED and manufacturing method thereof |
CN104600206A (en) * | 2015-01-13 | 2015-05-06 | 昆山维信诺科技有限公司 | OLED device and method for manufacturing OLED device |
CN104750294A (en) * | 2013-12-31 | 2015-07-01 | 比亚迪股份有限公司 | Touch screen, manufacturing method of touch screen and touch device comprising touch screen |
CN104871231A (en) * | 2012-12-10 | 2015-08-26 | 勒克斯维科技公司 | Active matrix display panel with ground tie lines |
CN105630230A (en) * | 2014-11-26 | 2016-06-01 | 三星显示有限公司 | Display device including touch sensor and manufacturing method thereof |
CN105930017A (en) * | 2016-04-27 | 2016-09-07 | 深圳力合光电传感股份有限公司 | Capacitive touch wire structure and preparation method thereof |
CN106997250A (en) * | 2017-03-16 | 2017-08-01 | 深圳市骏达光电股份有限公司 | The manufacturing process of touch-screen |
CN107313036A (en) * | 2017-06-19 | 2017-11-03 | 合肥市惠科精密模具有限公司 | A kind of method for carrying out chemical plating molybdenum in capacitance touch screen surfaces |
CN207182243U (en) * | 2017-08-17 | 2018-04-03 | 四川粤鸿显示技术有限公司 | A kind of Capacitance-type built-in touches structure and touch-screen |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102230298B1 (en) * | 2014-02-20 | 2021-03-22 | 삼성디스플레이 주식회사 | Display device and manufacturing method thereof |
-
2018
- 2018-04-19 CN CN201810354264.5A patent/CN108539055B/en active Active
Patent Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20120086211A (en) * | 2011-01-25 | 2012-08-02 | 엘지이노텍 주식회사 | Method for manufacturing touch panel |
CN202658083U (en) * | 2012-07-06 | 2013-01-09 | 深圳市新济达光电科技有限公司 | Functional sheet capable of eliminating shadow and capacitive touch screen |
CN202711220U (en) * | 2012-07-06 | 2013-01-30 | 深圳市新济达光电科技有限公司 | Function sheet for surface capacity touch screen |
CN104871231A (en) * | 2012-12-10 | 2015-08-26 | 勒克斯维科技公司 | Active matrix display panel with ground tie lines |
CN103425375A (en) * | 2013-08-09 | 2013-12-04 | 芜湖长信科技股份有限公司 | Capacitive touch screen and manufacturing method thereof |
CN103456392A (en) * | 2013-08-27 | 2013-12-18 | 南昌欧菲光科技有限公司 | Transparent electric conductor and manufacturing method thereof |
CN104750294A (en) * | 2013-12-31 | 2015-07-01 | 比亚迪股份有限公司 | Touch screen, manufacturing method of touch screen and touch device comprising touch screen |
CN105630230A (en) * | 2014-11-26 | 2016-06-01 | 三星显示有限公司 | Display device including touch sensor and manufacturing method thereof |
CN104485428A (en) * | 2014-12-29 | 2015-04-01 | 信利半导体有限公司 | OLED and manufacturing method thereof |
CN104600206A (en) * | 2015-01-13 | 2015-05-06 | 昆山维信诺科技有限公司 | OLED device and method for manufacturing OLED device |
CN105930017A (en) * | 2016-04-27 | 2016-09-07 | 深圳力合光电传感股份有限公司 | Capacitive touch wire structure and preparation method thereof |
CN106997250A (en) * | 2017-03-16 | 2017-08-01 | 深圳市骏达光电股份有限公司 | The manufacturing process of touch-screen |
CN107313036A (en) * | 2017-06-19 | 2017-11-03 | 合肥市惠科精密模具有限公司 | A kind of method for carrying out chemical plating molybdenum in capacitance touch screen surfaces |
CN207182243U (en) * | 2017-08-17 | 2018-04-03 | 四川粤鸿显示技术有限公司 | A kind of Capacitance-type built-in touches structure and touch-screen |
Also Published As
Publication number | Publication date |
---|---|
CN108539055A (en) | 2018-09-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI478887B (en) | Method of processing a tempered glass substrate for touch screens | |
CN103797405B (en) | Surface blemish for strengthening glassware is modified | |
TWI429606B (en) | The etching method of glass substrate | |
JP6313391B2 (en) | Glass substrate, cover glass for electronic device, and method for manufacturing glass substrate | |
CN104980117A (en) | Flexible surface acoustic wave device resistant to high temperature and manufacturing method thereof | |
JP2013242725A (en) | Cover glass for track pad and method of manufacturing the same | |
CN107630185A (en) | A kind of dry etching board inside panel renovation process | |
CN108539049A (en) | A kind of production method and OLED products of OLED products | |
CN108539055B (en) | A kind of production method and OLED product of OLED product | |
CN106835138B (en) | Etchant, array substrate for display device and its manufacturing method | |
CN107170679A (en) | A kind of preparation method of conductive pattern, conductive pattern and display base plate | |
CN106048543B (en) | Semiconductor wafer surface technique for vacuum coating | |
CN102277573B (en) | Chromium etchant for liquid crystal display screens and preparation method thereof | |
CN102956759A (en) | Method for preparing ITO (indium tin oxide) patterns by stripping | |
CN105463462A (en) | Etchant composition for silver nanowires | |
CN105392093B (en) | The manufacturing method of microphone chip | |
CN102142823A (en) | Quartz tuning fork machining method | |
CN109182969A (en) | The preparation method of medium-wave infrared optics horniness protective film | |
CN112466811B (en) | Copper-plated film touch screen preparation method | |
CN203894732U (en) | OGS capacitive touch screen of ITO bridge | |
CN108491103B (en) | Manufacturing method of double-sided ITO product and double-sided ITO product | |
CN106553992B (en) | The manufacturing method of metal electrode structure | |
CN105924016A (en) | Thinning liquid and glass substrate thinning method | |
CN108461656B (en) | Method for etching anode film layer and display panel thereof | |
CN103451665A (en) | Processing technology of touch screen leading wire |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |