CN108538951A - A kind of Double-side hot photovoltaic cell structure - Google Patents
A kind of Double-side hot photovoltaic cell structure Download PDFInfo
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- CN108538951A CN108538951A CN201710140374.7A CN201710140374A CN108538951A CN 108538951 A CN108538951 A CN 108538951A CN 201710140374 A CN201710140374 A CN 201710140374A CN 108538951 A CN108538951 A CN 108538951A
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000008187 granular material Substances 0.000 claims abstract description 20
- 239000011521 glass Substances 0.000 claims abstract description 18
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims abstract description 15
- 239000004926 polymethyl methacrylate Substances 0.000 claims abstract description 15
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical group C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims abstract description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 11
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical group OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims abstract description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000011888 foil Substances 0.000 claims abstract description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 241000790917 Dioxys <bee> Species 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 238000000034 method Methods 0.000 description 4
- 239000002110 nanocone Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 description 2
- RBORURQQJIQWBS-QVRNUERCSA-N (4ar,6r,7r,7as)-6-(6-amino-8-bromopurin-9-yl)-2-hydroxy-2-sulfanylidene-4a,6,7,7a-tetrahydro-4h-furo[3,2-d][1,3,2]dioxaphosphinin-7-ol Chemical compound C([C@H]1O2)OP(O)(=S)O[C@H]1[C@@H](O)[C@@H]2N1C(N=CN=C2N)=C2N=C1Br RBORURQQJIQWBS-QVRNUERCSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 239000005030 aluminium foil Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010977 jade Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0684—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells double emitter cells, e.g. bifacial solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
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- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
A kind of Double-side hot photovoltaic cell structure, including glass plate, it is characterised in that：There are Ag layers on the upper and lower surface of the glass plate, there is cadmium-telluride layer on Ag layers of outer surface, there is cadmium sulfide layer on the outer surface of cadmium-telluride layer, there are Au layers on the outer surface of cadmium sulfide layer, there is graphene layer on Au layers of outer surface, there is silica dioxide granule layer on the outer surface of graphene layer, there are PMMA layers on the outer surface of silica dioxide granule layer, coining has alumina foil on PMMA layers of outer surface, the silica dioxide granule layer is made of multiple hemisphere silica dioxide granules, and one end of glass plate is equipped with electrode leads to client with upper and lower Au layers one end.Glass plate above and below of the present invention makes thermophotovoltaic respectively, can greatly improve the generated energy of unit area solar panel；The positive and negative of thermophotovoltaic has anti-reflection layer structure, can preferably improve the photoelectric conversion efficiency of thermophotovoltaic.
Description
Technical field
The invention belongs to solar energy utilization technique field, specially a kind of Double-side hot photovoltaic cell structure.
Background technology
Thermophotovoltaic is also thermoelectric cell, main to be sent out using major part infrared light and far red light is accounted in sunlight
Electricity, electricity generating principle are similar to photovoltaic at present on the market.Currently, in thermophotovoltaic, only pass through one of thermophotovoltaic
Surface receives light, and therefore, the photoelectric conversion efficiency of thermophotovoltaic is generally relatively low.
Invention content
The present invention is opposite by two of glass substrate in view of the above-mentioned problems, provide a kind of Double-side hot photovoltaic cell structure
Surface receives infrared light and far red light, improves the photoelectric conversion efficiency of thermophotovoltaic.
The technical scheme is that：A kind of Double-side hot photovoltaic cell structure, including glass plate, it is characterised in that：Institute
The upper and lower surface for stating glass plate has Ag layers, has cadmium-telluride layer on Ag layers of outer surface, has sulphur on the outer surface of cadmium-telluride layer
Cadmium layer has Au layers on the outer surface of cadmium sulfide layer, has graphene layer on Au layers of outer surface, in the appearance of graphene layer
There is silica dioxide granule layer on face, there are PMMA layers on the outer surface of silica dioxide granule layer, is pressed on PMMA layers of outer surface
Be printed on alumina foil, the silica dioxide granule layer is made of multiple hemisphere silica dioxide granules, one end of glass plate with it is upper and lower
Au layers one end is equipped with electrode leads to client.
Ag layers of the thickness is 10~15 nanometers.
Au layers of the thickness is 10~20 nanometers.
A diameter of 15~25 nanometers of the hemisphere silica dioxide granule.
PMMA layers of the thickness is 100~110 nanometers.
The beneficial effects of the invention are as follows：The present invention provides a kind of Double-side hot photovoltaic cell structure, glass plate above and below difference
Thermophotovoltaic is made, the generated energy of unit area solar panel can be greatly improved；The positive and negative of thermophotovoltaic, which has, to be subtracted
Anti- layer structure can preferably improve the photoelectric conversion efficiency of thermophotovoltaic；Using the nanocone structures of coining, can absorb
More broadband infrared and far red light, while graded index is played again；Silica is imbedded in PMMA materials, is both realized
Mie scattering function, and reduce surface and lead to auger recombination because of the increase of contact area；Au layers, carrier can be improved
Transmittability, and long-range surface plasmon resonance can be formed to light, play certain light trapping effect；Graphene is for improving hot light
The mobility of son and phonon, improves the photoelectric conversion efficiency of thermophotovoltaic.
Description of the drawings
Fig. 1 is the structural diagram of the present invention.
In Fig. 1,1. glass plates, 2.Ag layers, 3. cadmium-telluride layers, 4. cadmium sulfide layers, 5.Au layers, 6. graphene layers, 7. dioxies
Silicon carbide particle layer, 8.PMMA layers, 9. alumina foils, 10. electrode leads to client, 71. hemisphere silica dioxide granules.
Specific implementation mode
The present invention will be further described below with reference to the drawings.
As shown in Figure 1, the present invention is a kind of Double-side hot photovoltaic cell structure, including glass plate 1, it is characterised in that：Institute
There are Ag layers 2 on the upper and lower surface for stating glass plate 1, has cadmium-telluride layer 3 on the outer surface of Ag layers 2, in the outer surface of cadmium-telluride layer 3
On have cadmium sulfide layer 4, have Au layers 5 on the outer surface of cadmium sulfide layer 4, have graphene layer 6 on the outer surface of Au layers 5, in stone
There is silica dioxide granule layer 7 on the outer surface of black alkene layer 6, there are PMMA layers 8 on the outer surface of silica dioxide granule layer 7,
Coining has alumina foil 9 on the outer surface of PMMA layers 8, and the silica dioxide granule layer 7 is by multiple hemisphere silica dioxide granules 71
Composition, one end of glass plate 1 and one end of upper and lower Au layers 5 are equipped with electrode leads to client 10.
The thickness of the Ag layers 2 is 10~15 nanometers.
The thickness of the Au layers 5 is 10~20 nanometers.
A diameter of 15~25 nanometers of the hemisphere silica dioxide granule 71.
The thickness of the PMMA layers 8 is 100~110 nanometers.
The present invention is obtained by following process：
(1) it is 10~15 nanometers of Ag films as positive electrode collection surface in the above and below deposition thickness of glass plate 1；
(2) cadmium-telluride layer 3 is deposited on the outer surface of Ag layers 2, and cadmium sulfide layer 4 is deposited on the outer surface of cadmium-telluride layer 3,
It is fabricated to the PN junction of thermophotovoltaic；
(3) on the outer surface of cadmium sulfide layer 4, using magnetron sputtering technique, vapor deposition layer of Au layer 5, thickness is 10~20
Nanometer；
(4) on 5 surface of Au layers being deposited, then a layer graphene layer 6 is synthesized；
(5) electron beam evaporation process is used, the making of silica dioxide granule layer 7 is completed, hemisphere silica dioxide granule 71
A diameter of 15~25 nanometers；
(6) fine jade applies the PMMA layers 8 that thickness is 100~110 nanometers；
(7) it after curing, is imprinted with nano oxidized aluminium foil 9, surface forms the nanocone structures of coining, completes.
The present invention provides a kind of Double-side hot photovoltaic cell structure, and glass plate above and below makes thermophotovoltaic respectively, can be with
Greatly improve the generated energy of unit area solar panel；The positive and negative of thermophotovoltaic has anti-reflection layer structure, can be better
Improve the photoelectric conversion efficiency of thermophotovoltaic；Using the nanocone structures of coining, can absorb more broadband infrared and remote
Infrared light, while graded index is played again；Silica is imbedded in PMMA materials, has not only realized Mie scattering function, but also subtract
Lacked surface leads to auger recombination because of the increase of contact area；Au layers, the transmittability of carrier can be improved and to light
Long-range surface plasmon resonance is formed, certain light trapping effect is played；Graphene is used to improve the mobility of hot photon and phonon,
Improve the photoelectric conversion efficiency of thermophotovoltaic.
Claims (5)
1. a kind of Double-side hot photovoltaic cell structure, including glass plate, it is characterised in that：Have on the upper and lower surface of the glass plate
Ag layers, there is cadmium-telluride layer on Ag layers of outer surface, have cadmium sulfide layer on the outer surface of cadmium-telluride layer, in the outer of cadmium sulfide layer
There are Au layers on surface, have graphene layer on Au layers of outer surface, there is silica dioxide granule layer on the outer surface of graphene layer,
There are PMMA layers on the outer surface of silica dioxide granule layer, coining has alumina foil, the dioxy on PMMA layers of outer surface
Silicon carbide particle layer is made of multiple hemisphere silica dioxide granules, and one end of glass plate is drawn with upper and lower Au layers one end equipped with electrode
Outlet.
2. a kind of Double-side hot photovoltaic cell structure according to claim 1, it is characterised in that：Ag layers of the thickness is 10
~15 nanometers.
3. a kind of Double-side hot photovoltaic cell structure according to claim 1, it is characterised in that：Au layers of the thickness is 10
~20 nanometers.
4. a kind of Double-side hot photovoltaic cell structure according to claim 1, it is characterised in that：The hemisphere silica
A diameter of 15~25 nanometers of grain.
5. a kind of Double-side hot photovoltaic cell structure according to claim 1, it is characterised in that：PMMA layers of the thickness is
100~110 nanometers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710140374.7A CN108538951A (en) | 2017-03-03 | 2017-03-03 | A kind of Double-side hot photovoltaic cell structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710140374.7A CN108538951A (en) | 2017-03-03 | 2017-03-03 | A kind of Double-side hot photovoltaic cell structure |
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| Publication Number | Publication Date |
|---|---|
| CN108538951A true CN108538951A (en) | 2018-09-14 |
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ID=63489495
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710140374.7A Pending CN108538951A (en) | 2017-03-03 | 2017-03-03 | A kind of Double-side hot photovoltaic cell structure |
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1767216A (en) * | 2004-10-29 | 2006-05-03 | 三菱重工业株式会社 | Photoelectric conversion device |
| CN102024522A (en) * | 2009-09-22 | 2011-04-20 | 均豪精密工业股份有限公司 | Method for processing attachments on double surfaces of glass |
| CN203339190U (en) * | 2013-04-26 | 2013-12-11 | 武汉经开能源科技发展有限公司 | Solar cell module with double-face power generation function |
| CN103681932A (en) * | 2013-12-06 | 2014-03-26 | 北海恒基伟业电子产品有限公司 | Cadmium telluride thin-film solar cell and manufacturing method thereof |
| CN203932070U (en) * | 2014-04-29 | 2014-11-05 | 江苏鼎云信息科技有限公司 | A kind of silicon solar battery assembly |
| CN204424292U (en) * | 2015-03-17 | 2015-06-24 | 常熟理工学院 | A kind of surfaces etc. are from reinforced graphite alkene silica-based solar cell |
| WO2015133997A1 (en) * | 2014-03-04 | 2015-09-11 | Empire Technology Development Llc | Screens for electronic devices, and methods for their preparation and use |
| CN206574729U (en) * | 2017-03-03 | 2017-10-20 | 无锡马丁格林光伏科技有限公司 | A kind of Double-side hot photovoltaic cell structure |
-
2017
- 2017-03-03 CN CN201710140374.7A patent/CN108538951A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1767216A (en) * | 2004-10-29 | 2006-05-03 | 三菱重工业株式会社 | Photoelectric conversion device |
| CN102024522A (en) * | 2009-09-22 | 2011-04-20 | 均豪精密工业股份有限公司 | Method for processing attachments on double surfaces of glass |
| CN203339190U (en) * | 2013-04-26 | 2013-12-11 | 武汉经开能源科技发展有限公司 | Solar cell module with double-face power generation function |
| CN103681932A (en) * | 2013-12-06 | 2014-03-26 | 北海恒基伟业电子产品有限公司 | Cadmium telluride thin-film solar cell and manufacturing method thereof |
| WO2015133997A1 (en) * | 2014-03-04 | 2015-09-11 | Empire Technology Development Llc | Screens for electronic devices, and methods for their preparation and use |
| CN203932070U (en) * | 2014-04-29 | 2014-11-05 | 江苏鼎云信息科技有限公司 | A kind of silicon solar battery assembly |
| CN204424292U (en) * | 2015-03-17 | 2015-06-24 | 常熟理工学院 | A kind of surfaces etc. are from reinforced graphite alkene silica-based solar cell |
| CN206574729U (en) * | 2017-03-03 | 2017-10-20 | 无锡马丁格林光伏科技有限公司 | A kind of Double-side hot photovoltaic cell structure |
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