CN108538816B - MIM capacitor of silicon nitride-polyimide composite medium and manufacturing method - Google Patents
MIM capacitor of silicon nitride-polyimide composite medium and manufacturing method Download PDFInfo
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- CN108538816B CN108538816B CN201810123229.2A CN201810123229A CN108538816B CN 108538816 B CN108538816 B CN 108538816B CN 201810123229 A CN201810123229 A CN 201810123229A CN 108538816 B CN108538816 B CN 108538816B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
Abstract
The invention discloses a MIM capacitor of a silicon nitride-polyimide composite medium and a manufacturing method thereof, wherein a silicon nitride-polyimide composite medium structure is arranged between an upper polar plate and a lower polar plate of the capacitor, a first silicon nitride layer is adopted to define the area of the capacitor, a second silicon nitride layer is adopted to define the distance between the upper polar plate and the lower polar plate of the capacitor, and meanwhile, a groove is filled with polyimide, so that on one hand, the water vapor erosion resistance is improved, the problem that the capacitor fails in reliability tests such as temperature, humidity, bias voltage and high accelerated stress test (BHMMAST) and the like is solved, on the other hand, the risk of second metal cross-zone fracture caused by height difference is reduced, the conductive capability and breakdown resistance of the upper polar plate are enhanced, the overall performance is improved, and the MIM capacitor can be applied.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to an MIM capacitor with a silicon nitride-polyimide composite medium and a manufacturing method thereof.
Background
MIM capacitors are widely used as charge storage, coupling, and filtering devices, and their fabrication is an important process in the fabrication of semiconductor integrated circuits. In the fabrication of the conventional MIM capacitor, a PI (polyimide) layer is formed on the lower electrode plate and the PI layer is windowed, and then a dielectric layer is deposited in the window to define the area of the MIM capacitor, wherein the distance between the upper and lower electrode plates of the MIM capacitor is defined by the dielectric layer. At present, gallium arsenide HBT is applied in the field of radio frequency, MIM capacitors are easy to lose effectiveness in reliability tests such as temperature, humidity, bias voltage (THB)/bias voltage high accelerated stress test (BHAST), and the like, because PI has poor water vapor corrosion resistance, even if a high-quality corrosion-resistant material is selected and the baking temperature is increased, the improvement effect is still limited, and the application of the MIM capacitors is limited.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provides a silicon nitride-polyimide composite dielectric MIM capacitor and a manufacturing method thereof.
In order to achieve the above purpose, the technical scheme of the invention is as follows:
a manufacturing method of a MIM capacitor of a silicon nitride-polyimide composite medium comprises the following steps:
1) carrying out isolation treatment on the semiconductor substrate;
2) depositing a first metal on the substrate, and etching the first metal to form a separated capacitor lower polar plate and a connecting line layer;
3) deposited to a thickness of
Etching the first silicon nitride layer to form a window for defining the area of the capacitor on the lower electrode plate of the capacitor;
4) deposited to a thickness of
The second silicon nitride layer forms a dielectric layer of a capacitor in the window and defines the distance between an upper plate and a lower plate of the capacitor;
5) forming a polyimide layer, wherein the polyimide layer fills a groove between the lower electrode plate of the capacitor and the connecting line layer;
6) depositing a second metal to form a capacitor upper plate.
Optionally, the refractive index of the first silicon nitride layer is 2.06, and the refractive index of the second silicon nitride layer is 1.91.
Optionally, the semiconductor substrate comprises silicon, gallium arsenide, and gallium nitride.
Optionally, the first metal has a thickness of
The thickness of the polyimide layer is
Optionally, in step 5), the forming of the polyimide layer includes: and coating polyimide, drying, and etching the polyimide to form an opening on the window, wherein the opening extends to 0.2-0.8 μm outside the lower electrode plate of the capacitor.
Optionally, the inclination angle of the opening side of the polyimide is 40 ° to 50 °.
Optionally, the edge of the window of the first silicon nitride layer is 1 μm to 3 μm within the edge of the capacitor lower plate.
Optionally, the inclination angle of the window side of the first silicon nitride layer is 25-35 °.
Optionally, step 6) is preceded by a step of etching the first silicon nitride layer, the second silicon nitride layer, and the polyimide over the wiring layer to form a via hole through which the second metal contacts the wiring layer.
The MIM capacitor of the silicon nitride-polyimide composite medium manufactured by the manufacturing method comprises a semiconductor substrate, a first metal, a first silicon nitride layer, a second silicon nitride layer, a polyimide layer and a second metal which are subjected to isolation treatment; the first metal comprises a capacitor lower polar plate and a connecting line layer which are formed on the substrate and arranged at intervals; the first silicon nitride covers the first metal and forms a window on the lower polar plate of the capacitor; the second silicon nitride covers the window to form a dielectric layer of the capacitor; the polyimide layer fills a groove between the capacitor lower polar plate and the connecting line layer; the second metal covers the dielectric layer of the capacitor to form an upper electrode plate of the capacitor and extends to the upper part of the connecting line layer; wherein the first silicon nitride has a thickness of
The second silicon nitride has a thickness of
The invention has the beneficial effects that:
(1) through the silicon nitride-polyimide composite medium structure, the area of the capacitor is defined by adopting the first silicon nitride layer, the distance between the upper pole plate and the lower pole plate of the capacitor is defined by adopting the second silicon nitride layer, and meanwhile, the groove is filled with polyimide, so that on one hand, the water vapor corrosion resistance is improved, the problem that the capacitor fails in reliability tests such as temperature, humidity, bias voltage (THB)/bias voltage high accelerated stress test (BHAST) and the like is solved, on the other hand, the risk of fracture of the second metal cross zone caused by height difference is reduced, the conductivity and the breakdown resistance of the upper pole plate are enhanced, and the overall performance is improved.
(2) The method can be applied to all HBT MMICs, provides a new scheme for MIM design, arrangement and line leading-out, and has strong practicability. Meanwhile, the communicating hole is formed beside the MIM capacitor, so that other devices such as HBT (heterojunction bipolar transistor) triodes and thin-film resistors can be conveniently connected.
(3) The method is simple, can be realized by conventional production equipment of semiconductor enterprises, and has low cost.
Drawings
FIG. 1 is a process flow diagram of the present invention;
FIG. 2 is a top view of the second step formation structure of FIG. 1;
fig. 3 is a schematic structural diagram of a MIM capacitor with a silicon nitride-polyimide composite dielectric according to the present invention.
Detailed Description
The invention is further explained below with reference to the figures and the specific embodiments. The present invention will be described in further detail with reference to the accompanying drawings and examples. The drawings are only schematic and can be easily understood, and the specific proportion can be adjusted according to design requirements. The relative positions of elements in the figures described herein are understood by those skilled in the art to refer to relative positions of elements, and thus all elements may be reversed to represent the same, all falling within the scope of the disclosure.
Referring to fig. 1, a method for fabricating a MIM capacitor with a silicon nitride-polyimide composite dielectric includes the following steps:
a semiconductor substrate 1, such as a semiconductor wafer of silicon (Si), gallium arsenide (GaAs), gallium nitride (GaN), etc., is provided, and conventional isolation processing is performed on the substrate 1.
Deposited on a substrate 1 to a thickness of
Referring to fig. 2, the first metal 2 is etched to form a separated capacitor lower plate 21 and a wiring layer 22, and a groove is formed therebetween. The first metal 2 may be, for example, Au or a composite laminate thereof with Ti, Pt, or the like, or may be another good metal conductor.
Deposited to a thickness of
The first silicon nitride layer 3 is etched to form a window 3a for defining the area of the capacitor on the capacitor bottom plate 21. Preferably, the first silicon nitride layer 3 may be a loose silicon nitride structure with a refractive index of 2.06, which has more excellent water vapor insulating performance compared to polyimide, and the ability of resisting water vapor corrosion can be significantly improved by covering the surface of the structure with the first silicon nitride layer 3. The capacitor area is defined by the window 3a, and the inclination angle of the side face of the window 3a is 25 ° to 35 °, preferably 30 °. The inclination angle is an angle between the sidewall of the window 3a and the surface of the lower electrode plate 21 of the capacitor, and the window 3a is inclined inward from top to bottom. The edge of the first silicon nitride layer window 3a is defined to be 1-3 μm inside the lower electrode plate of the capacitor. At the same time, the first silicon nitride layer 3 is etched to open the interconnection layer 22.
Deposited to a thickness of
The second silicon nitride layer 4 forms a dielectric layer of the capacitor in the window 3a, and because the thickness of the second silicon nitride layer 4 is far smaller than that of the first silicon nitride layer 3, the window 3a is an effective area of the capacitor, and the thickness of the second silicon nitride layer 4 defines the distance between the upper and lower electrode plates of the capacitor. The second silicon nitride layer 4 may be a dense silicon nitride structure having a refractive index of 1.91, havingHas excellent insulating performance. At the same time, the second silicon nitride layer 4 is etched to open the wiring layer 22.
Coating thickness of
The polyimide layer 5 is dried and etched to form an opening 5a on the window 3a, and the opening 5a is defined to be 0.2-0.8 μm, preferably 0.5 μm, outside the capacitor bottom plate 21, and the remaining polyimide layer 5 fills the groove between the capacitor bottom plate 21 and the wiring layer 22 to achieve planarization. The inclination angle of the side face of the polyimide opening 5a is 40 ° to 50 °, preferably 45 °. Meanwhile, the polyimide layer 5 is etched to open the wiring layer 22. The via hole b is formed on the wiring layer 22 by opening the first silicon nitride layer 3, the second silicon nitride layer 4, and the polyimide layer 5.
And depositing a second metal 6 to form a capacitance upper plate, and simultaneously contacting the second metal 6 with the connecting line layer 22 through the through hole b, thereby completing the manufacturing of the MIM capacitor.
Referring to fig. 3, the MIM capacitor of the silicon nitride-polyimide composite dielectric formed by the above method includes a semiconductor substrate 1, a first metal 2, a first silicon nitride layer 3, a second silicon nitride layer 4, a polyimide layer 5, and a second metal 6, which are subjected to an isolation process; the first metal 2 comprises a capacitor lower plate 21 and a connecting line layer 22 which are formed on the substrate 1 and arranged at intervals; the first silicon nitride layer 3 covers the first metal 2 and forms a window 3a on the capacitor lower plate 21; the second silicon nitride layer 4 covers the window 3a to form a dielectric layer of the capacitor; the polyimide layer 5 fills a groove between the capacitor lower plate 21 and the connecting line layer 22; the second metal 6 covers the dielectric layer of the capacitor to form a capacitor upper plate, extends to the upper part of the connecting line layer 22, and is in contact with the connecting line layer 22 through a communication hole b. The wiring layer 22 is used for arranging and leading out lines, and other devices such as HBT (heterojunction bipolar transistor), thin film resistors and the like can be conveniently connected.
The above embodiments are only used to further illustrate the MIM capacitor with silicon nitride-polyimide composite dielectric and the manufacturing method thereof, but the present invention is not limited to the embodiments, and any simple modification, equivalent change and modification made to the above embodiments according to the technical spirit of the present invention fall within the scope of the technical solution of the present invention.
Claims (8)
1. A manufacturing method of a MIM capacitor of a silicon nitride-polyimide composite medium is characterized by comprising the following steps:
1) carrying out isolation treatment on the semiconductor substrate;
2) depositing a first metal on the substrate, and etching the first metal to form a separated capacitor lower polar plate and a connecting line layer;
3) deposited to a thickness of
Etching the first silicon nitride layer to form a window for defining the area of the capacitor on the lower electrode plate of the capacitor, wherein the inclination angle of the side surface of the window is 25-35 degrees, and the refractive index of the first silicon nitride layer is 2.06;
4) deposited to a thickness of
The second silicon nitride layer forms a capacitance dielectric layer in the window and defines the distance between an upper plate and a lower plate of the capacitor, and the refractive index of the second silicon nitride layer is 1.91;
5) forming a polyimide layer, wherein the polyimide layer fills a groove between the lower electrode plate of the capacitor and the connecting line layer;
6) depositing a second metal to form a capacitor upper plate.
2. The method of manufacturing according to claim 1, wherein: the semiconductor substrate includes silicon, gallium arsenide, and gallium nitride.
3. The method of manufacturing according to claim 1, wherein: the first metal has a thickness of
The thickness of the polyimide layer is
4. The method of manufacturing according to claim 1, wherein: in step 5), the forming of the polyimide layer includes: and coating polyimide, drying, and etching the polyimide to form an opening on the window, wherein the opening extends to 0.2-0.8 μm outside the lower electrode plate of the capacitor.
5. The method of manufacturing according to claim 4, wherein: the inclination angle of the opening side face of the polyimide is 40-50 degrees.
6. The method of manufacturing according to claim 1, wherein: the window edge of the first silicon nitride layer is positioned within the edge of the lower electrode plate of the capacitor by 1-3 mu m.
7. The method of manufacturing according to claim 4, wherein: step 6) is preceded by a step of etching the first silicon nitride layer, the second silicon nitride layer, and the polyimide over the wiring layer to form a communicating hole through which the second metal is in contact with the wiring layer.
8. The MIM capacitor of silicon nitride-polyimide composite dielectric manufactured by the manufacturing method of any one of claims 1 to 7, characterized in that: the semiconductor device comprises a semiconductor substrate, a first metal, a first silicon nitride layer, a second silicon nitride layer, a polyimide layer and a second metal which are subjected to isolation processing; the first metal comprises a capacitor lower polar plate and a connecting line layer which are formed on the substrate and arranged at intervals; the first silicon nitride covers the first metal and forms a window on the lower polar plate of the capacitor; the second silicon nitride covers the window to form a dielectric layer of the capacitor; the polyimide layer fills a groove between the capacitor lower polar plate and the connecting line layer; the second metal coverCovering the dielectric layer of the capacitor to form a capacitor upper electrode plate and extending to the upper part of the connecting line layer; wherein the first silicon nitride has a thickness of
The second silicon nitride has a thickness of
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| CN201810123229.2A CN108538816B (en) | 2018-02-07 | 2018-02-07 | MIM capacitor of silicon nitride-polyimide composite medium and manufacturing method |
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| CN110676380A (en) * | 2019-08-28 | 2020-01-10 | 福建省福联集成电路有限公司 | MIM capacitor structure capable of improving breakdown resistance and manufacturing method |
| CN110767650B (en) * | 2019-09-20 | 2021-12-10 | 福建省福联集成电路有限公司 | SMIM capacitor structure for improving breakdown resistance and manufacturing method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1253661A (en) * | 1997-04-29 | 2000-05-17 | 艾利森电话股份有限公司 | Capacitors in integrated circuits |
| CN102709270A (en) * | 2012-05-23 | 2012-10-03 | 上海宏力半导体制造有限公司 | MIM (Metal Insulator Metal) capacitor and forming method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2753789B2 (en) * | 1993-02-10 | 1998-05-20 | 日本電信電話株式会社 | Manufacturing method of capacitive element |
| KR102037646B1 (en) * | 2012-06-15 | 2019-10-28 | 소니 주식회사 | Display device, semiconductor device and method for manufacturing display device |
| JP6451601B2 (en) * | 2015-11-11 | 2019-01-16 | 三菱電機株式会社 | Semiconductor device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1253661A (en) * | 1997-04-29 | 2000-05-17 | 艾利森电话股份有限公司 | Capacitors in integrated circuits |
| CN102709270A (en) * | 2012-05-23 | 2012-10-03 | 上海宏力半导体制造有限公司 | MIM (Metal Insulator Metal) capacitor and forming method thereof |
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