CN110676380A - MIM capacitor structure capable of improving breakdown resistance and manufacturing method - Google Patents
MIM capacitor structure capable of improving breakdown resistance and manufacturing method Download PDFInfo
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- CN110676380A CN110676380A CN201910802461.3A CN201910802461A CN110676380A CN 110676380 A CN110676380 A CN 110676380A CN 201910802461 A CN201910802461 A CN 201910802461A CN 110676380 A CN110676380 A CN 110676380A
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- 239000003990 capacitor Substances 0.000 title claims abstract description 52
- 230000015556 catabolic process Effects 0.000 title claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 239000010410 layer Substances 0.000 claims abstract description 127
- 150000004767 nitrides Chemical class 0.000 claims abstract description 73
- 239000002184 metal Substances 0.000 claims abstract description 71
- 229910052751 metal Inorganic materials 0.000 claims abstract description 71
- 239000004642 Polyimide Substances 0.000 claims abstract description 35
- 229920001721 polyimide Polymers 0.000 claims abstract description 35
- 239000004065 semiconductor Substances 0.000 claims abstract description 15
- 239000011241 protective layer Substances 0.000 claims abstract description 14
- 239000011248 coating agent Substances 0.000 claims abstract description 11
- 238000000576 coating method Methods 0.000 claims abstract description 11
- 238000000151 deposition Methods 0.000 claims abstract description 9
- 238000009413 insulation Methods 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 21
- 238000005530 etching Methods 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 2
- 239000002131 composite material Substances 0.000 abstract description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 15
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- 239000010703 silicon Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 241001391944 Commicarpus scandens Species 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- -1 helium ions Chemical class 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
The invention discloses a manufacturing method of an MIM capacitor structure for improving breakdown resistance, which comprises the following steps: manufacturing an insulation region on the epitaxial wafer of the semiconductor device; manufacturing a bare epitaxial structure on the insulating region; manufacturing a lower polar plate metal on the exposed epitaxial structure; depositing a first nitride layer; continuing to deposit a second nitride layer; coating a polyimide layer on the second nitride layer; and manufacturing upper pole plate metal and a protective layer, wherein the protective layer is provided with a connecting point for connecting an external circuit. According to the scheme, the first nitride layer, the second nitride layer and the polyimide layer form a protection ring composite structure, so that the breakdown resistance of the MIM capacitor can be improved, the water vapor resistance and the reliability of a capacitor device can be improved, and the MIM capacitor can be utilized to a greater extent.
Description
Technical Field
The invention relates to the field of capacitor manufacturing on semiconductor devices, in particular to an MIM capacitor structure and a manufacturing method.
Background
The MIM thin film capacitor currently used in HBT (heterojunction bipolar transistor) MMIC (monolithic microwave integrated circuit) is mostly metal-silicon nitride-metal or metal-silicon nitride-metal structure, as shown in fig. 1. metal is a metal layer and silicon nitride is a dielectric layer. The dielectric layer has certain stress concentration at the edge of the capacitor, and is easy to break down in practical application, so that the capacitor of the MIM thin film has weak breakdown resistance and insufficient stability.
Disclosure of Invention
Therefore, it is desirable to provide an MIM capacitor structure and a fabrication method thereof, which can improve breakdown resistance, and solve the problem of insufficient breakdown resistance of the conventional MIM capacitor.
In order to achieve the above object, the inventor provides a method for manufacturing an MIM capacitor structure with improved breakdown resistance, comprising the following steps:
manufacturing an insulation region on the epitaxial wafer of the semiconductor device;
manufacturing a bare epitaxial structure on the insulating region;
manufacturing a lower polar plate metal on the exposed epitaxial structure;
depositing a first nitride layer, etching a window on the lower-level plate metal, and reserving the first nitride layer outside the window;
continuing to deposit a second nitride layer, wherein the second nitride layer covers the first nitride layer and the lower-level plate metal;
coating a polyimide layer on the second nitride layer, and etching a window above the lower-level plate metal;
and manufacturing upper pole plate metal.
Further, the depositing the first nitride layer further comprises:
deposited to a thickness of
The first nitride layer of (1).
Further, the depositing the second nitride layer further comprises the steps of:
deposited to a thickness ofThe second nitride layer of (1).
Further, the step of coating the polyimide layer further comprises the steps of:
the thickness of the polyimide layer is coated to
Further, the method also comprises the following steps: the deposition of the protective layer is carried out,
and manufacturing a connection point of an external circuit on the protective layer.
The invention provides an MIM capacitor structure for improving breakdown resistance, which is characterized by comprising the following components:
an insulating region on the semiconductor device epitaxial wafer;
a bare epitaxial structure on the insulating region;
a lower polar plate metal is arranged on the exposed epitaxial structure;
a first nitride layer is arranged on the outer side of the metal of the lower polar plate;
a second nitride layer is arranged on the first nitride layer and the lower-level plate metal;
a polyimide layer is arranged on the second nitride layer above the outer side of the lower-level plate metal;
an upper plate metal is disposed on the polyimide layer and the second nitride layer.
Further, the first nitride layer has a thickness of
Further, the second nitride layer has a thickness of
Further, the thickness of the polyimide layer is
Furthermore, a protective layer is arranged on the upper pole plate metal and provided with a connection point for connecting an external circuit.
Compared with the prior art, in the implementation process of the technical scheme, the guard ring composite structure formed by the first nitride layer, the second nitride layer and the polyimide layer can improve the breakdown resistance of the MIM capacitor, improve the water vapor resistance and reliability of the capacitor device and enable the MIM capacitor to be utilized to a greater extent.
Drawings
FIG. 1 is a prior art MIM capacitor with metal-silicon nitride-metal structure;
FIG. 2 is a flow chart of the MIM capacitor fabrication process of the present invention;
fig. 3 is a first cross-sectional view of a MIM capacitor according to the present invention;
fig. 4 is a cross-sectional view of a second MIM capacitor according to the present invention;
fig. 5 is a top view of a MIM capacitor according to the present invention;
FIG. 6 illustrates the breakdown of the capacitor defined by the first nitride layer and the polyimide layer of the present invention.
Description of reference numerals:
1. an epitaxial structure;
2. an epitaxial structure;
3. a lower plate metal;
4. a first nitride layer;
5. a second nitride layer;
6. a polyimide layer;
7. upper plate metal;
8. a protective layer;
9. a third window;
10. and a fourth window.
Detailed Description
To explain technical contents, structural features, and objects and effects of the technical solutions in detail, the following detailed description is given with reference to the accompanying drawings in conjunction with the embodiments.
Referring to fig. 2 to 6, the present embodiment provides a method for fabricating an MIM capacitor structure with improved breakdown strength, which is performed on an epitaxial wafer of a semiconductor device, such as a wafer or a chip. The method comprises the following steps: in the step of fabricating an insulating region on a semiconductor epitaxial wafer, which corresponds to the process step S101 in the embodiment of fig. 2, in order to avoid the capacitance failure caused by the conductivity of the semiconductor device, a photoresist is coated on the semiconductor device epitaxial wafer, and then an opening is exposed and developed in the region to be insulated, the insulating region is isolated by implanting He + (helium ions) or etching using an ion implanter, and after the insulating region is fabricated, the photoresist is cleaned and removed, so as to fabricate a capacitor in the passive region.
Coating photoresist on a semiconductor epitaxial wafer, exposing, developing, and wet etching the epitaxial structure 2 to the epitaxial structure 1 by using the photoresist as a mask to obtain a bare epitaxial structure 1, and performing photoresist stripping and cleaning after the bare epitaxial structure 1 is formed, wherein the step corresponds to the process step S102 in the embodiment of fig. 2.
The lower plate metal 3 is fabricated on the exposed epitaxial structure 1, and the lower plate metal 3 forms a first capacitor plate, which corresponds to the process step S103 in the embodiment of fig. 2. Coating photoresist on the epitaxial wafer, exposing and developing the exposed epitaxial structure 1 region, then evaporating the required metal, wherein the evaporated metal is a composite layer or a single layer of Au, Ti, Pt and Ni, and the thickness of the evaporated metal is
And (4) lifting the metal, removing the photoresist, and cleaning, and retaining the metal above the exposed epitaxial structure 1, so as to obtain the lower plate metal 3. If necessary, the protrusion of the lower plate metal 3 can be madeAnd a region through which an external circuit can be electrically connected to the lower plate metal 3.
After the bottom plate metal 3 is manufactured, the first nitride layer 4 is manufactured, which corresponds to the process step S104 in the embodiment of fig. 2, and the material of the nitride layer may be silicon nitride. Deposited to a thickness of
Coating a photoresist on the first nitride layer 4, exposing and developing the area on the lower plate metal 3, etching the first nitride layer 4 to the lower plate metal 3 by using the photoresist as a mask, reserving the first nitride layer 4 on the outer side of the lower plate metal 3, and forming a first window after etching. The first nitride layer 4 outside the first window has a profile slope angle of 30 to 50 ° and serves as one of Guard Ring (Guard Ring) constituent structures. In the conventional MIM capacitor, the tip discharge is present, and the first nitride layer 4 is provided to prevent the tip discharge, so that the MIM capacitor is stable.
A second nitride layer 5 is formed on the first nitride layer 4, which corresponds to process step S105 of the embodiment of fig. 2, deposited to a thickness of
The second nitride layer 5, the second nitride layer 5 covering the bottom plate metal 3 and the first nitride layer 4. The second nitride layer 5 not only serves as a dielectric layer to prevent the electrical connection between the polar plates, but also is a layer of the protective ring composition structure, so that the breakdown resistance of the nitride layer can be improved, and the voltage resistance of the capacitor can be improved.
On the second nitride layer 5 is coated to a thickness of
This step corresponds to step S106 of the embodiment shown in fig. 2. Coating photoresist, exposing and developing the region on the lower plate metal 3, and etching polyimide with the photoresist as maskAmine layer 6 to second nitride layer 5, forming a second window defining the area of the capacitor, polyimide layer 6 remains over the outside of lower plate metal 3. The polyimide layers 6 on both sides of the second window serve as one of the guard rings (guard rings) and have a profile slope angle of 50-70 deg. The second window is the smallest window of the capacitor, the surface of the capacitor device is provided with grooves with different degrees, the height difference of the semiconductor surface can be reduced after the polyimide layer 6 is coated, the grooves are filled, the surface flatness is kept, and the metal fracture probability is reduced.
The guard ring composite structure formed by the three layers of the first nitride layer 4, the second nitride layer 5 and the polyimide layer 6 can enhance the breakdown resistance of the MIM capacitor. The first nitride layer 4 can prevent the tip discharge of the lower plate metal 3; the second silicon nitride layer 5 serves as a dielectric layer and a layer of a protection ring, and serves as a protection ring to enhance the breakdown resistance of the MIM capacitor; the polyimide layer 6 is also used as a layer of a protection ring, so that the height difference of the semiconductor surface is reduced, the groove is filled, the surface flatness is kept, and the metal fracture probability is reduced. The second window on the inner side of the polyimide layer 6 is used for defining the area of the capacitor, namely the smallest window in the capacitor, the second window is the flattest position of the dielectric layer, stress concentration is avoided, and the protection effect of three layers of protection rings is formed on the periphery of the second window, so that the breakdown resistance of the capacitor can be greatly improved. And the composite structure of the protection ring does not need to additionally increase the cost of the existing production line, is convenient to produce and is efficient and useful.
The breakdown resistance and the overall performance of the protective ring structure are improved in reliability tests such as a dielectric breakdown Voltage (Voltage across dielectric breakdown), a Temperature-Humidity Bias (Temperature-Humidity Bias), a high accelerated stress test (high-level accelerated stress test) and the like. Fig. 6 illustrates the capacitor breakdown condition defined by the first nitride (silicon nitride) layer 4 and the polyimide layer 6. The test condition is 5V/S, the breakdown condition under different capacitor areas, wherein the area unit K is 0.00001cm2, and it can be seen from the figure that the breakdown voltage of the polyimide 6 in the embodiment is much higher than that of the silicon nitride 4, that is, the combined protection layer of the polyimide and the silicon nitride in the embodiment can improve the breakdown resistance and the moisture resistance, thereby improving the reliability of the MMIC.
Then, the top plate metal 7 is manufactured, and this step corresponds to the process step S107 in the embodiment of fig. 2. Coating photoresist on the polyimide layer 6, exposing and developing the region to be evaporated with metal, evaporating the metal to be evaporated to form a composite layer or single layer of Au, Ti, Pt and Ni, and forming the polyimide layer with a thickness of
And an upper plate metal 7, namely a second capacitor plate. The upper plate metal 7 covers the second nitride layer 5 and the polyimide layer 6 located outside the second window. If necessary, a protruding region of the upper plate metal 7 may be formed, and an external circuit may be electrically connected to the upper plate metal 7 through the protruding region.
After the top plate metal 7 is fabricated, a protection layer 8 is fabricated on the semiconductor epitaxial wafer, which corresponds to the process step S108 in the embodiment of fig. 2. By coating the surface with silicon nitride or other protective layer materials by chemical vapor deposition, the protective layer 8 covers the upper plate metal 7 and the polyimide layer 6, and after covering, only the protective layer 8 is contacted from the outside, and the capacitor structure is not contacted. A photoresist is coated on the protection layer 8, then the photoresist is patterned, and the protection layer 8 is etched to the top plate metal 7 by using the photoresist as a mask, so as to form a third window 9 and a fourth window 10, which are shown in fig. 4. The third window 9 and the fourth window 10 can be used as connection points of an external circuit, and the structure is shown in fig. 5.
The present invention provides a MIM capacitor structure with improved breakdown resistance, as shown in fig. 3 to 5, the capacitor structure of the present embodiment can be manufactured according to the above method. The MIM capacitor structure includes: an insulation region, a naked epitaxial structure 1 and an epitaxial structure 2 on the semiconductor epitaxial wafer; on the exposed epitaxial structure 1 is arranged a thickness of
The lower plate metal 3.
The outer side of the lower pole plate metal 3 is provided with a thickness of
The slope angle of the outline of the first nitride layer 4 is 30-50 degrees, and the inner part of the first nitride layer 4 is a first window. A thickness of
The first nitride layer 4 and the second nitride layer 5 act as dielectric layers of the MIM capacitor, isolating the top plate metal 7 and the bottom plate metal 3 from electrical connection. The second nitride layer 5 outside the lower plate metal 3 is provided with a thickness of
The gradient angle of the outline of the polyimide layer 6 is 50-70 degrees, and the inner side of the polyimide layer 6 is a second window. The guard ring composite structure formed by the first nitride layer 4, the second nitride layer 5 and the polyimide layer 6 solves the problem that the traditional MIM capacitor is insufficient in breakdown resistance. And the composite structure of the protection ring does not need to additionally increase the cost of the existing production line, is convenient to produce and is efficient and useful.
The polyimide layer 6 and the second nitride layer 5 are provided with a thickness ofThe upper electrode plate metal 7, the upper electrode plate metal 7 and the lower electrode plate metal 3 respectively form two electrode plates of the capacitor; in order to isolate the capacitor structure from the outside, a protective layer 8 is disposed on the upper plate metal 7, and the protective layer 8 covers the upper plate metal 7. The protective layer 8 is provided with a third window 9 and a fourth window 10 which are respectively connected with an external circuit, and the third window 9 and the fourth window 10 are used as connection points of the external circuit.
It should be noted that, although the above embodiments have been described herein, the invention is not limited thereto. Therefore, based on the innovative concepts of the present invention, the technical solutions of the present invention can be directly or indirectly applied to other related technical fields by making changes and modifications to the embodiments described herein, or by using equivalent structures or equivalent processes performed in the content of the present specification and the attached drawings, which are included in the scope of the present invention.
Claims (10)
1. A manufacturing method of an MIM capacitor structure for improving breakdown resistance is characterized by comprising the following steps:
manufacturing an insulation region on the epitaxial wafer of the semiconductor device;
manufacturing a bare epitaxial structure on the insulating region;
manufacturing a lower polar plate metal on the exposed epitaxial structure;
depositing a first nitride layer, etching a window on the lower-level plate metal, and reserving the first nitride layer outside the window;
continuing to deposit a second nitride layer, wherein the second nitride layer covers the first nitride layer and the lower-level plate metal;
coating a polyimide layer on the second nitride layer, and etching a window above the lower-level plate metal;
and manufacturing upper pole plate metal.
2. The method of claim 1, wherein depositing the first nitride layer further comprises:
deposited to a thickness of
The first nitride layer of (1).
3. The method as claimed in claim 1 or 2, wherein the step of depositing the second nitride layer further comprises the steps of:
deposited to a thickness of
The second nitride layer of (1).
4. The method as claimed in claim 3, wherein the step of coating the polyimide layer further comprises the steps of:
the thickness of the polyimide layer is coated to
5. The method of claim 1, further comprising the steps of: the deposition of the protective layer is carried out,
and manufacturing a connection point of an external circuit on the protective layer.
6. An MIM capacitor structure with improved breakdown resistance, comprising:
an insulating region on the semiconductor device epitaxial wafer;
a bare epitaxial structure on the insulating region;
a lower polar plate metal is arranged on the exposed epitaxial structure;
a first nitride layer is arranged on the outer side of the metal of the lower polar plate;
a second nitride layer is arranged on the first nitride layer and the lower-level plate metal;
a polyimide layer is arranged on the second nitride layer above the outer side of the lower-level plate metal;
an upper plate metal is disposed on the polyimide layer and the second nitride layer.
7. The structure of claim 6, wherein the first nitride layer has a thickness of
8. A method according to claim 6 or 7An MIM capacitor structure with improved breakdown resistance, wherein the second nitride layer has a thickness of
9. The structure of claim 8, wherein the polyimide layer has a thickness of
10. The structure of claim 6, wherein the metal of the top plate has a protection layer thereon, and the protection layer has a connection point for connecting to an external circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910802461.3A CN110676380A (en) | 2019-08-28 | 2019-08-28 | MIM capacitor structure capable of improving breakdown resistance and manufacturing method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910802461.3A CN110676380A (en) | 2019-08-28 | 2019-08-28 | MIM capacitor structure capable of improving breakdown resistance and manufacturing method |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05341328A (en) * | 1992-06-09 | 1993-12-24 | Citizen Watch Co Ltd | Liquid crystal display device and its production |
| TW200403713A (en) * | 2002-03-11 | 2004-03-01 | Micron Technology Inc | MIM capacitor with metal nitride electrode materials and method of formation |
| JP2011166032A (en) * | 2010-02-12 | 2011-08-25 | Sharp Corp | Semiconductor device and method of manufacturing the same |
| CN107342281A (en) * | 2017-06-29 | 2017-11-10 | 厦门市三安集成电路有限公司 | A kind of preparation method of compound semiconductor mim capacitor structure |
| CN108538816A (en) * | 2018-02-07 | 2018-09-14 | 厦门市三安集成电路有限公司 | A kind of MIM capacitor and production method of silicon nitride-polyimides complex media |
-
2019
- 2019-08-28 CN CN201910802461.3A patent/CN110676380A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05341328A (en) * | 1992-06-09 | 1993-12-24 | Citizen Watch Co Ltd | Liquid crystal display device and its production |
| TW200403713A (en) * | 2002-03-11 | 2004-03-01 | Micron Technology Inc | MIM capacitor with metal nitride electrode materials and method of formation |
| JP2011166032A (en) * | 2010-02-12 | 2011-08-25 | Sharp Corp | Semiconductor device and method of manufacturing the same |
| CN107342281A (en) * | 2017-06-29 | 2017-11-10 | 厦门市三安集成电路有限公司 | A kind of preparation method of compound semiconductor mim capacitor structure |
| CN108538816A (en) * | 2018-02-07 | 2018-09-14 | 厦门市三安集成电路有限公司 | A kind of MIM capacitor and production method of silicon nitride-polyimides complex media |
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